CN110707409A - Hybrid plasmon resonator with high quality factor - Google Patents
Hybrid plasmon resonator with high quality factor Download PDFInfo
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Abstract
The invention discloses a high-quality-factor hybrid plasmon resonator which is of a layered structure, wherein the uppermost layer is a sensing area layer, the lowermost layer is a large-area metal ground, the upper layer of the large-area metal ground is a medium substrate, and the lower layer of the sensing area layer is a transmission layer where a resonator body and a microstrip line are located; the resonator body is formed by superposing an artificial local surface plasmon resonance structure and a fan-shaped resonance structure; a gap is arranged between the microstrip line and the resonator body. The resonator has the advantages of high quality factor and high resonance strength through interference among a plurality of resonance modes.
Description
Technical Field
The invention belongs to the technical field of resonators and transmission lines, and particularly relates to a microwave millimeter wave resonator with high quality factor and high resonance strength.
Background
The quality factor (Q-factor) is an important measure for an electromagnetic resonator, and its value represents the lifetime of the resonant mode, i.e. the time for which the electromagnetic field mode interacts with the surrounding environment. The quality factor is determined by losses of the structure, including material losses, scattering losses, radiation losses. The material loss and scattering loss are determined by the properties of the material itself and the roughness of the structure, while the radiation loss is strongly related to the electrical size of the resonator. In general, a large electrical size means that the electromagnetic wave resonance experiences less bending and thus a higher Q value.
For the microwave resonator, because the microwave wavelength is longer, in consideration of size problems, the resonator is usually in the sub-wavelength order, such as microstrip ring (microstrip ring), split ring (split ring), etc., so that the radiation loss is larger and the quality factor value is lower. Although a high-quality-factor resonator can be realized through some special designs, such as dark mode, Fano resonance, etc., the excitation of the sub-wavelength high-quality-factor resonator is difficult, the resonant peak or valley is shallow, and the excitation efficiency is not high. Large arrays of resonators or resonators placed in waveguides are often required to achieve high resonance strength.
An artificial localized surface plasmon is a resonator based on an artificial subwavelength structure, usually a cylinder or a disk with a periodic saw-tooth structure. The artificial localized surface plasmon has characteristics similar to those of the localized surface plasmon of optical frequency, such as high field enhancement, field locality of depth subwavelength, and the like; therefore, the method has great application potential in the aspects of manufacturing high-sensitivity devices, reducing the size of circuits and devices, enhancing the sensing sensitivity and the like. However, like other microwave resonators, the artificial localized surface plasmon has a problem that it is difficult to achieve both a quality factor and a resonance intensity.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems in the prior art, the invention provides a hybrid plasmon resonator which has the advantages of high quality factor and high resonance strength through the interference among a plurality of resonance modes.
The technical scheme is as follows: the invention adopts the following technical scheme:
a high-quality-factor hybrid plasmon resonator is of a layered structure, wherein the uppermost layer is a sensing area layer 1, the lowermost layer is a large-area metal ground 2, the upper layer of the large-area metal ground is a medium substrate 3, and the lower layer of the sensing area layer is a transmission layer 6 where a resonator body 4 and a microstrip line 5 are located;
the resonator body 4 is formed by superposing an artificial local surface plasmon resonance structure 7 and a fan-shaped resonance structure 8; a gap is arranged between the microstrip line 5 and the resonator body 4, and the gap is a part of the sensing area.
The sensing area (1) only covers the resonator body (4), or covers the whole resonator body (4) and a part of the microstrip line (5), or covers the whole resonator body (4) and the whole microstrip line (5).
The sensing area (1) is a closed area or an open space covered by an outer wall, and the refractive index of the sensing area material is in the range of (1, 3).
Preferably, the refractive index of the sensing region (1) material is in the range of (1, 1.8).
The artificial local surface plasmon resonance structure 7 is a circle with periodic saw teeth arranged on the periphery, the circular inner diameter is R, and the radius of the circular saw tooth structure 9 is R; and N sawtooth periods are totally arranged in one cycle, in each period, the metal strip is in a fan shape, the arc length of the metal strip is a, the width of a single period is d, wherein d is 2 pi R/N, and a < d.
The fan-shaped resonance structure 8 is a fan shape with a periodic sawtooth structure 10 arranged on the outer side of an arc, and the inner diameter of the fan shape is R1The radius of the fan-shaped annular sawtooth structure 10 is R2。
The single sawtooth period width of the fan-shaped annular sawtooth structure (10) is d, and the sawtooth width is a.
The dielectric substrate 3 is FR4, F4B, RO4003, 3003, 4350, RT5880, 5870, 6002, 6006, 6010, 6035, 6202 produced by Rogers, a dielectric substrate of a printed circuit or a microwave circuit of N4000-13, N4000-13EPSI produced by Nelco, or Si, SiO2、Al2O3GaAs, GaN, or a flexible organic dielectric material.
The thickness of the dielectric substrate 3 is 1 mu m-10 mm.
The large-area metal ground 2, the resonator body 4 and the microstrip line 5 are made of single materials or composite materials of copper, tin, gold, silver, chromium, lead, platinum, zinc, aluminum, magnesium or titanium.
The thickness of the large-area metal ground 2, the thickness of the resonator body 4 and the thickness of the microstrip line 5 are 50 nm-1 mm.
Has the advantages that: the hybrid plasmon resonator disclosed by the invention forms a single sharp resonance peak by utilizing the mutual interference among a plurality of electromagnetic resonance modes, and can simultaneously enhance the quality factor and the resonance strength of the resonance peak, thereby realizing the high-sensitivity sensing on the dielectric environment. The hybrid excimer resonator has considerable application prospect in integrated circuits, sensing chips, microwave millimeter wave and terahertz sensing.
The working principle of the invention is as follows:
the resonator can be analyzed by the Coupled Mode Theory (CMT) in the time domain. For the case of only one excitation port, the arbitrary resonant mode nth, its amplitude an, the eigenresonance frequency ω n, the eigendecay time τ n0, the decay time due to port coupling is τ n 1. The pattern follows the following equation:
wherein Sn,1+ is energy entering the nth resonance mode from the energy (S1+) flowing from the port 1
Most of the resonant modes γ n1 ≈ 1 except in special cases.
Is the coupling phase from S1+ to Sn,1+, the coupling coefficient Kn1 is determined by the coupling time τ n1 and the phase coefficient θ n 1:
when a plurality of resonance modes exist in the structure, the resonance of the whole structure is determined by the mutual interference of the plurality of modes, and the reflected energy is as follows:
the reflection coefficient of the whole structure is then:
the superposition term of the multiple resonance modes can be seen from equation (5).
In the first embodiment, we will describe the theory of coupling modes with specific cases.
Drawings
FIG. 1 is a schematic structural diagram of a resonator according to the present disclosure;
FIG. 2 is a schematic structural diagram of a resonator body in the resonator disclosed in the present invention;
FIG. 3 is a schematic diagram of the geometrical parameters of the resonator body in the resonator disclosed in the present invention;
FIG. 4 is S of SLSP resonator, sector resonator and hybrid plasmon resonator11A graph comparing curves;
FIG. 5 shows the field distribution and radiation patterns of two resonant modes of the SLSP resonant structure and the PR resonant structure and the hybrid plasmon resonator at the resonant peak;
FIG. 6 shows S of each resonant mode in coupled-mode theory11A spectrogram;
FIG. 7 shows the S of the resonator of the present invention under different refractive index changes of dielectric environment11A graph;
FIG. 8 shows a resonator pair sensor S with different thicknesses of a dielectric plate covered with F4B11Graph is shown.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described below with reference to the accompanying drawings.
The invention discloses a high-quality-factor hybrid plasmon resonator, which is of a layered structure as shown in figure 1, wherein figure 1- (a) is a front view, and figure 1- (b) is a side view. The upper layer of the sensing area layer is a sensing area layer 1, the lowest layer of the sensing area layer is a large-area metal ground 2, the upper layer of the large-area metal ground is a medium substrate 3, and the lower layer of the sensing area layer is a transmission layer 6 where a resonator body 4 and a microstrip line 5 are located;
as shown in fig. 2, the Resonator body 4 is formed by stacking an artificial localized surface plasmon (SLSP) resonant structure 7 and a fan-shaped resonant structure (PR) 8. Figure 3 is a schematic diagram of the geometrical parameters of the resonator body. The artificial local surface plasmon resonance structure 7 is a circle with periodic saw teeth arranged on the periphery, the circular inner diameter is R, and the radius of the circular ring-shaped saw tooth structure 9 is R; and N sawtooth periods are totally arranged in one cycle, in each period, the metal strip is in a fan shape, the arc length of the metal strip is a, the width of a single period is d, wherein d is 2 pi R/N, and a < d.
The fan-shaped resonance structure 8 is a fan shape with a periodic sawtooth structure 10 arranged on the outer side of an arc, and the inner diameter of the fan shape is R1The angle is theta, and the radius of the fan-shaped annular sawtooth structure 10 is R2. The centers of the artificial local surface plasmon resonance structure 7 and the sector resonance structure 8 are overlapped, and a gap is arranged between the microstrip line 5 and the resonator body 4 and is a part of the sensing area. The gap distance is S, and the width of the microstrip line is w. The cycle width of a single sawtooth of the fan-shaped annular sawtooth structure 10 is d, the sawtooth width is a, and the cycle width d and the width a of the single sawtooth are consistent with the cycle width d and the width a of the circular annular sawtooth structure 9 in the artificial local surface plasmon resonance structure 7, so that the two sawtooth can be superposed; radius R thereof1And R2And the number of saw tooth cycles, i.e. the angle, is adjustable.
The dielectric substrate 3 may be FR4, F4B, RO4003, 3003, 4350, RT5880, 5870, 6002, 6006, 6010, 6035, 6202, a dielectric substrate for a printed circuit or a microwave circuit of N4000-13, N4000-13EPSI, produced by the company Nelco, or Si, SiO2、Al2O3GaAs, GaN, or a flexible organic dielectric material. The thickness of the dielectric substrate 3 is between 1 mu m and 10 mm. The large-area metal ground 2, the resonator body 4 and the microstrip line 5 are made of a single material or a composite material of copper, tin, gold, silver, chromium, lead, platinum, zinc, aluminum, magnesium or titanium. The thicknesses of the large-area metal ground 2, the resonator body 4 and the microstrip line 5 are 50 nm-1 mm.
The first embodiment is as follows:
this exampleThe structure of the hybrid plasmon resonator is shown in fig. 1-3. Wherein the geometrical parameters are: r-12 mm, R-2.5 mm, d-2.09 mm, a-0.6 d-1.26 mm, R19mm, theta 86 deg.. The structure is excited by a 50 omega microstrip line, the dielectric substrate 3 is a F4B plate with the thickness of 0.5mm, the dielectric constant is 2.65, the loss tangent is 0.001, the microstrip line width w is 1.34mm, and the microstrip line-to-resonator gap s is 0.2 mm.
Artificial localized surface plasmon resonator (SLSP), sector resonator (PR) and simulation S of Hybrid plasmon resonator (Hybrid) (resonator body) disclosed by the invention11The curves are shown in fig. 4. The resonance peak of the hybrid plasmon resonator is 9.16GHz, S110.04(-22.8dB), and the quality factor Q142. And an artificial local surface plasmon resonator (SLSP) is a magnetic plasmon mode at 8.96GHz, and Q is 44.8. Due to the superposition of the two resonators, the artificial local surface plasmon resonator (SLSP) has a resonance peak at 8.96GHz, the sector resonator (PR) has resonance peaks at 8.9GHz and 9.29GHz, the three modes exist in Hybrid plasmon resonator Hybrid (resonator body) at the same time, and the three modes are mutually superposed, so that the enhancement of the Q value by 3.4 times is realized.
To measure the Q value and the resonance strength, we define the Figure of MeritFoM as Q x δ I, where δ I is S11Amplitude of the resonance peak. The hybrid plasmon resonator FoM is 143.8, the artificial local surface plasmon resonator FoM is 1.8, and 79.8 times of FoM enhancement is realized compared with a visible resonance peak.
The field distribution and radiation pattern of the artificial localized surface plasmon resonator (SLSP), the sector resonator (PR), and the Hybrid plasmon resonator (Hybrid) at the resonance peak are shown in fig. 5. From the field distribution, the resonance mode of the hybrid plasmon resonator is formed by superposition of SLSP resonance and PR resonance. From the perspective of Radiation Efficiency (RE), although the Q value of the hybrid plasmon resonator is high, the radiation Efficiency is as high as 0.47. It can be seen that the high Q of the hybrid plasmons is not due to low radiation, but due to the superposition interference between multiple modes. The hybrid plasmon resonator has high radiation efficiency, is easy to be excited by space waves, and can be used for wired detection and wireless detection.
For the specific structural parameters in the first embodiment, coupling mode theory is applied, and the parameters of three modes of the SLSP and PR resonators are shown in table 1. Since the microstrip excitation is here a weak excitation, the eigenresonance frequency of the three modes is taken to be S11Resonant frequency of the spectrum, other parameters being fitting S11And obtaining a frequency spectrum. The structure of the coupling mode theory and simulation comparison is shown in fig. 6, wherein the discrete points of the three shapes are the coupling mode theory result, and the black solid line is simulation data. It can be seen that the resonance curve and simulation data of the Hybrid plasmon resonator (Hybrid, resonator body) obtained by the coupling mode theory are very well in accordance with the superposition of the single resonance of the SLSP and the two resonances of the PR, thereby proving the feasibility of our theory.
TABLE 1 parameters of three resonances in coupled-mode theory.
Example two
The sensing area 1 is a closed area or an open space covered by an outer wall, and the material of the sensing area can be gas, liquid, solid or the mixture of the three; the refractive index of the sensing region material is in the range of (1, 3).
The present embodiment adopts the same geometry as the embodiment, and the electromagnetic simulation result of the resonator applied to the sensing of different dielectric environments (refractive index range 1-1.8) is shown in fig. 7. FIG. 7 shows the reflectivity (S) of the resonator body under different values of the refractive index of the sensing region11) A frequency spectrum; wherein the solid black line is the reflectance S in the case where the refractive index of the sensing region is equal to 1 (air)11. When the refractive index of the sensing region 1 is gradually increased, we can see S11The sensitivity of the frequency spectrum resonance frequency red shift and the frequency variation with the refractive index is 1.1GHz-1. And the sensitivity of the artificial surface plasmon resonator is 0.27ghz-1. Therefore, the hybrid plasmon resonator realizes the enhancement of the dielectric environment sensing sensitivity by 4.1 times.
EXAMPLE III
The present example adopts the same geometry as that of the first example, and for the detection of the thickness of the F4B medium plate, the experimental test results are shown in FIG. 8, in which the central circle, the solid circle, the hollow triangle and the solid triangle are S of the F4B medium substrate at 0.5mm, 1mm, 1.5mm and 2mm respectively11Curve, solid black line is S of resonator body without covering dielectric substrate11Frequency spectrum. It can be seen that the resonance peak shows obvious red shift with the increase of the thickness of the surface dielectric material.
Claims (10)
1. A high-quality-factor hybrid plasmon resonator is characterized in that the resonator is of a layered structure, wherein the uppermost layer is a sensing region layer (1), the lowermost layer is a large-area metal ground (2), the upper layer of the large-area metal ground is a dielectric substrate (3), and the lower layer of the sensing region layer is a transmission layer (6) where a resonator body (4) and a microstrip line (5) are located;
the resonator body (4) is formed by superposing an artificial local surface plasmon resonance structure (7) and a fan-shaped resonance structure (8); a gap is arranged between the microstrip line (5) and the resonator body (4), and the gap is a part of the sensing area.
2. The high-quality-factor hybrid plasmon resonator according to claim 1, wherein the artificial local surface plasmon resonance structure (7) is circular with periodic saw teeth on the periphery, the circular inner diameter is R, and the radius of the circular ring-shaped saw tooth structure (9) is R; the period of the metal saw teeth is N, in each period, the metal saw teeth are fan-shaped, the width of the metal saw teeth is a, the width of a single period is d, wherein d is 2 pi R/N, and a is less than d.
3. The high-quality-factor hybrid plasmon resonator according to claim 2, wherein the sector-shaped resonance structure (8) is a sector with periodic sawtooth structures (10) arranged outside the arc of a circle, and the inner diameter of the sector is R1The radius of the fan-shaped annular sawtooth structure (10) is R2(ii) a The single sawtooth period width of the fan-shaped annular sawtooth structure (10) is d, and the sawtooth width is a.
4. The high-Q hybrid plasmon resonator according to claim 1, wherein the dielectric substrate (3) is FR4, F4B, a dielectric substrate of RO4003, 3003, 4350, RT5880, 5870, 6002, 6006, 6010, 6035, 6202, a printed circuit or microwave circuit of N4000-13, N4000-13EPSI manufactured by Nelco, or Si, SiO2、Al2O3GaAs, GaN, or a flexible organic dielectric material.
5. The high-quality-factor hybrid plasmon resonator according to claim 1, characterized in that the thickness of said dielectric substrate (3) is between 1 μm and 10 mm.
6. The high-quality-factor hybrid plasmon resonator according to claim 1, characterized in that the large-area metal ground (2), the resonator body (4) and the microstrip line (5) are single materials of copper, tin, gold, silver, chromium, lead, platinum, zinc, aluminum, magnesium or titanium or composite materials thereof.
7. The high-quality-factor hybrid plasmon resonator according to claim 1, characterized in that the thickness of the large-area metal ground (2), the resonator body (4) and the microstrip line (5) is between 50nm and 1 mm.
8. The high-quality-factor hybrid plasmonic resonator according to claim 1, wherein the sensing region (1) is: only the resonator body (4) is covered, or the whole resonator body (4) and a part of the microstrip line (5) are covered, or the whole resonator body (4) and the whole microstrip line (5) are covered.
9. The high-quality-factor hybrid plasmon resonator according to claim 1, characterized in that said sensing region (1) is a closed region or an open space enclosed by an outer wall, said sensing region material having a refractive index in the range of (1, 3).
10. The high-q hybrid plasmon resonator according to claim 9, characterized in that the refractive index of the sensing region (1) material is in the range of (1, 1.8).
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Cited By (3)
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| CN111697307A (en) * | 2020-05-28 | 2020-09-22 | 北京大学 | Artificial local surface plasmon resonator applied to gyrotron and method |
| CN113964540A (en) * | 2021-10-27 | 2022-01-21 | 南京航空航天大学 | Device and method for regulating and controlling moire effect artificial surface plasmon dispersion |
| CN114417766A (en) * | 2022-01-11 | 2022-04-29 | 东南大学 | Mode mixed resonance Q value enhancement method |
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