CN110702097A - Star sensor radiation damage assessment method based on extreme detection star isosensitivity - Google Patents
Star sensor radiation damage assessment method based on extreme detection star isosensitivity Download PDFInfo
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Abstract
The invention relates to a star sensor radiation damage assessment method based on extreme detection star sensitivity, the device comprises a static test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, wherein the imaging lens fixed on the sample test board and the collimator are aligned on a straight line by the auto-collimation theodolite, and then adjusting the single star simulator to 5 equistars, imaging the simulated single star point through the imaging lens, adjusting the optical lens simultaneously to enable the star point to be imaged clearly, and calculating to obtain the signal-to-noise ratio SNR of the single star point of different stars and the like under different accumulated radiation doses through dark field test and bright field test to obtain the ultimate detection star sensitivity of the star sensor under different accumulated radiation doses. The method can accurately evaluate the radiation damage of the star sensor under different accumulated radiation doses, and is simple, quick and high in practicability.
Description
Technical Field
The invention relates to the technical field of satellite navigation, in particular to a star sensor radiation damage assessment method based on extreme detection star equal sensitivity.
Background
The star sensor is a high-precision space attitude measuring device which takes a fixed star as a reference system and a starry sky as a working object, and is widely applied to various aerospace crafts and satellites due to the advantages of high precision, strong reliability, good autonomy and the like. The star sensor generally comprises an optical system, an imaging system, a data processing system and a data exchange system. The imaging system is an important component of the star sensor, and the performance of the imaging system determines the detection capability of the star sensor.
The imaging system of the star sensor mainly comprises a complementary metal oxide semiconductor active pixel sensor, and is bound to face the threat of a natural space radiation environment in space application, and high-energy charged particles in the space radiation environment act on a device to generate an accumulative radiation effect (total ionization dose effect and displacement damage effect) and a single particle effect, so that the performance parameters of the device, such as dark current, dark signal non-uniformity noise, photoresponse non-uniformity noise and the like, are degraded, and even the function is failed. The research at home and abroad finds that the space radiation damage of the complementary metal oxide semiconductor active pixel sensor can cause the star sensor to generate performance degradation phenomena such as the reduction of star point centroid positioning precision, the reduction of star detection sensitivity and the like after the star sensor works in space and is irradiated, the working precision and the effective service life of the star sensor are influenced, and the safe and reliable operation of the star sensor and even a satellite is seriously threatened. However, the research institutions at home and abroad do not research the mechanism of how the change of the radiation damage sensitive parameters of the CMOS active pixel sensor is transmitted to the output end of the star sensor system to cause the degradation of the system performance parameters, and the radiation damage of the star sensor system cannot be quantitatively evaluated.
The invention relates to a star sensor radiation damage assessment method based on extreme detection star sensitivity, the device involved in the method consists of a static test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, the method comprises aligning a sample test board and a collimator on a straight line by using an autocollimation theodolite, then adjusting the single star simulator to 5 equi-stars, imaging the simulated single star points through the imaging lens, adjusting the optical lens simultaneously to enable the star points to be imaged clearly, calculating to obtain the signal-to-noise ratio SNR of the single star points of different stars and the like under different accumulated radiation doses through a dark field test and a bright field test, and counting m, the detection star when the signal-to-noise ratio SNR of a single star point under each accumulated radiation dose is less than 5 for the first time.1Finally, the detected star is equal to m1And subtracting 0.1 to obtain the ultimate detection star sensitivity of the star sensor under different accumulated radiation doses. The method can accurately evaluate the radiation damage of the star sensor under different accumulated radiation doses, is simple and quick, has strong practicability, can lay a certain foundation for the research of the on-orbit attitude measurement error prediction and correction technology of the star sensor, and can provide a certain theoretical basis for the design of the high-precision star sensor.
Disclosure of Invention
The invention aims to provide a star sensor radiation damage assessment method based on extreme detection star equal sensitivity by deducing the degradation of star sensor system performance parameters from the change analysis of radiation damage sensitive parameters of a complementary metal oxide semiconductor active pixel sensor, wherein the related device comprises an electrostatic test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, and the method comprises the steps of firstly utilizing the auto-collimation theodolite to couple the sample test board and the collimator to each otherAligning on a straight line, adjusting a single star simulator to 5 equi-stars, imaging a simulated single star point through an imaging lens, adjusting an optical lens simultaneously to enable the star point to be imaged clearly, calculating to obtain the signal-to-noise ratio SNR of the single star point of different stars under different accumulated radiation doses through dark field test and bright field test, and counting m of the detected stars when the signal-to-noise ratio SNR of the single star point under each accumulated radiation dose is smaller than 5 for the first time1Finally, the detected star is equal to m1And subtracting 0.1 to obtain the ultimate detection star sensitivity of the star sensor under different accumulated radiation doses. The method can accurately evaluate the radiation damage of the star sensor under different accumulated radiation doses, and is simple, rapid and high in practicability.
The invention relates to a star sensor radiation damage assessment method based on extreme detection star and other sensitivities, which comprises a static test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, wherein the static test platform (1) is respectively provided with the integrating sphere light source (2) and the sample adjusting turntable (3), the sample test board (4) is fixed on the sample adjusting turntable (3), the complementary metal oxide semiconductor active pixel sensor sample (5) is placed on the sample test board (4), the imaging lens (11) is fixed on the sample test board (4), and the sample test board (4) is respectively connected with the integrating sphere light source (2) and the direct current power supply (6), the device is characterized in that a collimator (8), an autocollimation theodolite (9) and a single-star simulator (10) are respectively arranged on two sides of the electrostatic test platform (1), the collimator (8) is connected with the single-star simulator (10), the autocollimation theodolite (9) and the collimator (8) are aligned, the electrostatic test platform (1) is connected with a computer (7), and the specific operation is carried out according to the following steps:
a. aligning an imaging lens (11) fixed on a sample test board (4) and a collimator (8) on a straight line by using an auto-collimation theodolite (9);
b. fixing the irradiated complementary metal oxide semiconductor active pixel sensor sample (5) on a sample test board (4), connecting the sample test board (4) with a direct current power supply (6) and a computer (7) respectively, adjusting a single-star simulator (10) to 5 equi-stars, imaging a simulated single-star point through an imaging lens (11), and adjusting an optical lens to enable the star point to be clearly imaged;
c. starting to perform dark field test, turning off all illumination light sources in the test chamber during the dark field test, collecting 50 star maps by the computer, averaging the background gray values of the 50 star maps to obtain background shot noise of the star maps
d. C, utilizing the 50 star maps collected in the step c, averaging the gray values of the single star points in the 50 star maps to obtain the target shot noise of the star points
e. Turning on an integrating sphere light source (2), keeping other illumination light sources in a test chamber off, setting integration time to enable the gray value output by the pixels of the complementary metal oxide semiconductor active pixel sensor sample (5) to reach 50% of saturated gray value, starting bright field test, and collecting 50 images by a computer (7);
f. calculating the dark current noise N of the irradiated complementary metal oxide semiconductor active pixel sensor sample (5) by using the images acquired by the dark field test in the step c and the bright field test in the step eDCFixed pattern noise NFPNDark signal non-uniformity noise NDSNUAnd read noise Nread；
g. Adjusting the single star simulator (10) to other stars and the like, repeating the steps c, d and e to calculate the photoresponse non-uniformity noise N of the complementary metal oxide semiconductor active pixel sensor sample (5) under different stars and the likePRNUAnd background shot noise of star map
And target shot noise
h. Taking down the CMOS active pixel sensor sample (5) fixed on the sample test board (4), replacing with the CMOS active pixel sensor sample (5) with different accumulated doses, repeating the steps b, c, d, e and f, and calculating to obtain the total noise N of the CMOS active pixel sensor sample (5) with different accumulated doses and different stars and the likeD；
i. Calculating the signal-to-noise ratio SNR of single star points of different stars and the like under different accumulated radiation doses;
j. counting m of detection stars when the signal-to-noise ratio SNR of a single star point under each accumulated radiation dose is less than 5 for the first time1；
k. D, the detected stars m calculated in the step j are equal1Subtracting 0.1 to obtain the ultimate detection star sensitivity of the star sensor.
The invention relates to a star sensor radiation damage assessment method based on extreme detection star equal sensitivity, wherein drawing software used in dark field test and light field test in the method is provided by the forty-fourth research institute of China electronics technology group company; the image processing software is provided by institute of photoelectric technology of academy of sciences of China;
the image collected by dark field test and bright field test is used for computer image processing to obtain read-out noise NreadCalculating the dark current noise N of the CMOS active pixel sensor after irradiation according to the formula (1)DCCalculating the fixed pattern noise N according to the formula (2)FPNCalculating dark signal non-uniformity noise N under different cumulative radiation doses according to equation (3)DSNU；
NFPN＝s2(2)
Wherein N isdarkThe number of electrons generated for dark current; s2To be connected with each otherCompensating the standard deviation of the gray value of a dark field image acquired by the metal oxide semiconductor active pixel sensor; k is the conversion gain.
Calculating the photoresponse non-uniformity noise N of the CMOS active pixel sensor sample (5) under different stars according to the formula (4)PRNU；
Wherein s is1The standard deviation of the image gray value when the bright field image collected by the complementary metal oxide semiconductor active pixel sensor reaches half saturation; s2A standard deviation of gray scale values of dark field images acquired for the cmos active pixel sensor; mu.s1Average gray scale value of bright field image collected by the CMOS active pixel sensor; mu.s2The average gray scale value of the image when the dark field image acquired by the CMOS active pixel sensor reaches half saturation.
Calculating the total noise N of the CMOS active pixel sensor sample (5) under different accumulated doses and different stars according to the formula (5)D；
Calculating the signal-to-noise ratio SNR of single star points of different stars and the like under different accumulated radiation doses according to a formula (6);
counting m of detection stars when the signal-to-noise ratio SNR of a single star point under each accumulated radiation dose is less than 5 for the first time1(ii) a The calculated detected stars are equal to m1Subtracting 0.1 to obtain the ultimate detection star sensitivity of the star sensor.
The star sensor radiation damage evaluation method based on the ultimate detection star sensitivity is suitable for a star sensor system of any type of complementary metal oxide semiconductor active pixel sensor as an imaging system. The method has the advantages of high accuracy, simplicity, rapidness and strong practicability, can lay a certain foundation for the research of the on-orbit attitude measurement error prediction and correction technology of the star sensor, and can provide a certain theoretical basis for the design of the high-precision star sensor.
Therefore, the method is suitable for being used by a star sensor development unit, a scientific research institute and an aerospace load unit which need to estimate or master the radiation damage degree of the star sensor.
Drawings
FIG. 1 is a schematic diagram of a test system according to the present invention;
fig. 2 is a star map acquired by a computer.
Detailed Description
The present invention is described in further detail below with reference to the attached drawing figures.
Examples
The invention relates to a star sensor radiation damage assessment method based on extreme detection star isosensitivity, which comprises an electrostatic test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single star simulator and an imaging lens, wherein the electrostatic test platform 1 is respectively provided with the integrating sphere light source 2 and the sample adjusting turntable 3, the sample adjusting turntable 3 is fixedly provided with a sample test board 4, the sample test board 4 is provided with the complementary metal oxide semiconductor active pixel sensor sample 5, the sample test board 4 is fixedly provided with the imaging lens 11, the sample test board 4 is respectively connected with the integrating sphere light source 2 and the direct current power supply 6, two sides of the electrostatic test platform 1 are respectively provided with the collimator 8, the imaging lens and the imaging lens, The device comprises an auto-collimation theodolite 9 and a single-satellite simulator 10, wherein a collimator 8 is connected with the single-satellite simulator 10, the auto-collimation theodolite 9 is aligned with the collimator 8, a static test platform 1 is connected with a computer 7, and the specific operation is carried out according to the following steps:
a. aligning an imaging lens 11 fixed on the sample test board 4 and a collimator 8 on a straight line by using an auto-collimation theodolite 9;
b. fixing a sample 5 of the irradiated complementary metal oxide semiconductor active pixel sensor on a sample test board 4, connecting the sample test board 4 with a direct current power supply 6 and a computer 7 respectively, adjusting a single star simulator 10 to 5 stars, imaging a simulated single star point through an imaging lens 11, and adjusting an optical lens to make the star point imaged clearly, wherein the model of the complementary metal oxide semiconductor active pixel sensor used by the star sensor in the embodiment is CMV4000, the resolution ratio of the complementary metal oxide semiconductor active pixel sensor is 2048 multiplied by 2048, the pixel structure is 8T-APS, the direct current power supply is set to 5V, and the current is limited by 1A;
c. starting to perform dark field test, turning off all illumination light sources in the test chamber during the dark field test, collecting 50 star maps by the computer, averaging the background gray values of the 50 star maps, exchanging different stars by the single star simulator 10, and repeatedly measuring to obtain background shot noise of the star maps under different stars
Are all 1.28e-；
d. C, using the 50 star maps acquired in the step c, averaging the gray values of the single star points in the 50 star maps, exchanging different stars and the like by the single star simulator 10, and repeatedly measuring to obtain the target shot noise of a certain star point under different stars and the likeAs shown in table 1;
TABLE 1 shot noise of different star equal single star point signal targets
e. Turning on an integrating sphere light source 2, keeping other illumination light sources in the test chamber off, setting the integration time to enable the gray value output by the pixel of a complementary metal oxide semiconductor active pixel sensor sample 5 to reach a 50% saturated gray value, wherein the gray value output by the pixel in the embodiment is 600DN, the integration time is 5.76ms, starting to perform a bright field test, and collecting 50 images by a computer 7;
f. using the images collected in the dark field test of step c and the bright field test of step e, the computer 7 processes the images to obtain the read noise NreadIs 13e-Calculating the dark current noise N of the CMOS active pixel sensor after irradiation according to the formula (1)DCCalculating the fixed pattern noise N according to the formula (2)FPNCalculating dark signal non-uniformity noise N under different cumulative radiation doses according to equation (3)DSNU；
NFPN＝s2(2)
Wherein N isdarkThe number of electrons generated for dark current; s2A standard deviation of gray scale values of dark field images acquired for the cmos active pixel sensor; k is the conversion gain;
calculating dark current noise N of the CMOS active pixel sensor under different accumulated radiation doses through a formulaDCFixed pattern noise NFPNAnd dark signal non-uniformity noise NDSNUAs shown in table 2:
TABLE 2 CMOS active pixel sensor dark current noise N at different cumulative radiation dosesDC，
Fixed pattern noise NFPNDark signal non-uniformity noise NDSNU
g. Adjusting the single star simulator 10 to other stars and the like, repeating the steps c, d and e, and calculating the photoresponse non-uniformity noise N of the complementary metal oxide semiconductor active pixel sensor sample (5) under different stars and the like according to the formula (4)PRNU；
Wherein s is1The standard deviation of the image gray value when the bright field image collected by the complementary metal oxide semiconductor active pixel sensor reaches half saturation; s2A standard deviation of gray scale values of dark field images acquired for the cmos active pixel sensor; mu.s1Average gray scale value of bright field image collected by the CMOS active pixel sensor; mu.s2The average gray value of the image when the image of the dark field collected by the complementary metal oxide semiconductor active pixel sensor reaches half saturation;
calculating and obtaining the photoresponse non-uniformity noise N of the CMOS active pixel sensor under different stars and the like through a formula (4)PRNUAs shown in table 3:
TABLE 3 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR ACTIVE PIXEL SENSOR OPTICAL RESPONSE NON-UNIFORMITY NOISE IN DIFFERENT STAR AND EQUAL
| Stars, etc | Photoresponse non-uniformity noise (e-) |
| 5 | 4.36 |
| 5.8 | 2.10 |
| 5.9 | 1.91 |
| 6 | 1.75 |
| 6.1 | 1.59 |
| 6.2 | 1.45 |
| 6.3 | 1.33 |
| 6.4 | 1.21 |
| 6.5 | 1.11 |
h. Taking off the CMOS active pixel sensor sample 5 fixed on the sample test board 4, replacing with the CMOS active pixel sensor sample 5 with different accumulated doses, repeating the steps b, c, d, e and f, and calculating according to the formula (5) to obtain the total noise N of the CMOS active pixel sensor sample 5 with different accumulated doses and different starsD；
Calculating the total noise N of the CMOS active pixel sensor by formula (5)DAs shown in table 4:
TABLE 4 Total noise of CMOS active pixel sensor at different cumulative doses, different stars, etc
i. Calculating the signal-to-noise ratio SNR of single star points of different stars and the like under different accumulated radiation doses according to a formula (6);
the signal-to-noise ratio SNR of the individual star points of different stars and the like at different cumulative radiation doses is calculated by equation (6), as shown in table 5:
TABLE 5 Single Star SNR values at different cumulative doses, different stars, etc
j. Counting m of detection stars when the signal-to-noise ratio SNR of the star points under each accumulated radiation dose is less than 5 for the first time1: when the radiation dose is 0krad (Si), m is equal to the detection star16.2, etc.; when the radiation dose is 0.5krad (Si), m is equal to the detection star16.2, etc.; when the radiation dose is 5krad (Si), m is equal to the detection star16.2, etc.; when the radiation dose is 20krad (Si), m is equal to detection star16.1, etc.; when the radiation dose is 60krad (Si), m is equal to detection star15.9, etc.;
k. subtracting 0.1 from the detection star and the like calculated in the step j to obtain the ultimate detection star and the like sensitivity of the star sensor, wherein when the radiation dose is 0krad (Si), the ultimate detection star and the like sensitivity of the star sensor is 6.1 and the like; when the radiation dose is 0.5krad (Si), the sensitivity of the star sensor for detecting the limit detection star is 6.1 and the like; when the radiation dose is 5krad (Si), the sensitivity of the star sensor for detecting the limit detection star is 6.1 and the like; when the radiation dose is 20krad (Si), the sensitivity of the star sensor for detecting the limit detection star is 6 and the like; when the radiation dose is 60krad (Si), m is equal to detection star15.8, etc.
The above description is only an embodiment of the method for evaluating radiation damage of a star sensor based on extreme sensitivity of detecting stars and the like provided by the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that any replacement or addition or subtraction within the technical scope of the present invention should be included in the scope of the present invention.
Claims (1)
1. A star sensor radiation damage assessment method based on limit detection star isosensitivity is characterized in that a related device in the method consists of a static test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single star simulator and an imaging lens, wherein the static test platform (1) is respectively provided with the integrating sphere light source (2) and the sample adjusting turntable (3), the sample test board (4) is fixed on the sample adjusting turntable (3), the complementary metal oxide semiconductor active pixel sensor sample (5) is placed on the sample test board (4), the imaging lens (11) is fixed on the sample test board (4), and the sample test board (4) is respectively connected with the integrating sphere light source (2) and the direct current power supply (6), the device is characterized in that a collimator (8), an autocollimation theodolite (9) and a single-star simulator (10) are respectively arranged on two sides of the electrostatic test platform (1), the collimator (8) is connected with the single-star simulator (10), the autocollimation theodolite (9) and the collimator (8) are aligned, the electrostatic test platform (1) is connected with a computer (7), and the specific operation is carried out according to the following steps:
a. aligning an imaging lens (11) fixed on a sample test board (4) and a collimator (8) on a straight line by using an auto-collimation theodolite (9);
b. fixing the irradiated complementary metal oxide semiconductor active pixel sensor sample (5) on a sample test board (4), connecting the sample test board (4) with a direct current power supply (6) and a computer (7) respectively, adjusting a single-star simulator (10) to 5 equi-stars, imaging a simulated single-star point through an imaging lens (11), and adjusting an optical lens to enable the star point to be clearly imaged;
c. starting to perform dark field test, turning off all illumination light sources in the test chamber during the dark field test, collecting 50 star maps by the computer, averaging the background gray values of the 50 star maps to obtain background shot noise of the star maps
d. C, utilizing the 50 star maps acquired in the step c to average the gray value of each star point in the 50 star mapsMean value derived target shot noise of star point
e. Turning on an integrating sphere light source (2), keeping other illumination light sources in a test chamber off, setting integration time to enable the gray value output by the pixels of the complementary metal oxide semiconductor active pixel sensor sample (5) to reach 50% of saturated gray value, starting bright field test, and collecting 50 images by a computer (7);
f. calculating the dark current noise N of the irradiated complementary metal oxide semiconductor active pixel sensor sample (5) by using the images acquired by the dark field test in the step c and the bright field test in the step eDCFixed pattern noise NFPNDark signal non-uniformity noise NDSNUAnd read noise Nread；
g. Adjusting the single star simulator (10) to other stars and the like, repeating the steps c, d and e to calculate the photoresponse non-uniformity noise N of the complementary metal oxide semiconductor active pixel sensor sample (5) under different stars and the likePRNUAnd background shot noise of star map
And target shot noise
h. Taking down the CMOS active pixel sensor sample (5) fixed on the sample test board (4), replacing with the CMOS active pixel sensor sample (5) with different accumulated doses, repeating the steps b, c, d, e and f, and calculating to obtain the total noise N of the CMOS active pixel sensor sample (5) with different accumulated doses and different stars and the likeD；
i. Calculating the signal-to-noise ratio SNR of single star points of different stars and the like under different accumulated radiation doses;
j. counting m of detection stars when the signal-to-noise ratio SNR of a single star point under each accumulated radiation dose is less than 5 for the first time1；
k. D, the detected stars m calculated in the step j are equal1Subtracting 0.1 to obtain the ultimate detection star sensitivity of the star sensor.
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