CN110702098B - Star sensor radiation damage laboratory evaluation method based on star diagonal distance measurement precision - Google Patents
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Abstract
The invention relates to a laboratory evaluation method of radiation damage of a star sensor based on measurement precision of a star diagonal distance, which comprises a static test platform, an integrating sphere light source, a sample adjusting rotary table, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, wherein the imaging lens and the collimator fixed on the sample test board are aligned by using the auto-collimation theodolite, the single-star simulator is adjusted to be a zero star, the sample adjusting rotary table is adjusted to be a rotation angle of 0 DEG and a pitch angle of 0 DEG, the single-star diagonal point is imaged by using the imaging lens, the coordinate position of the mass center of a single star point is extracted by dark field testing, then the direction vector of the star point is converted, the test value of the star diagonal distance is obtained by using the direction vector of the star point, and the theoretical value of the star diagonal distance is obtained by adjusting the angle of the rotary table, namely the measurement precision of the star diagonal distance. The method can be used for quickly evaluating the radiation damage of the star sensor under different accumulated radiation doses under the laboratory condition, and is simple and high in practicability.
Description
Technical Field
The invention relates to the technical field of satellite navigation, in particular to a star sensor radiation damage laboratory evaluation method based on star diagonal distance.
Background
The star sensor is a high-precision space attitude measuring device which takes a fixed star as a reference system and a starry sky as a working object, and is widely applied to various aerospace crafts and satellites due to the advantages of high precision, strong reliability, good autonomy and the like. The star sensor generally comprises an optical system, an imaging system, a data processing system and a data exchange system. The imaging system is an important component of the star sensor, and the performance of the imaging system determines the detection capability of the star sensor.
The imaging system of the star sensor mainly comprises a complementary metal oxide semiconductor active pixel sensor, and is bound to face the threat of a natural space radiation environment in space application, and high-energy charged particles in the space radiation environment act on a device to generate an accumulative radiation effect (total ionization dose effect and displacement damage effect) and a single particle effect, so that the performance parameters of the device, such as dark current, dark signal non-uniformity noise, photoresponse non-uniformity noise and the like, are degraded, and even the function is failed. The research at home and abroad finds that the space radiation damage of the complementary metal oxide semiconductor active pixel sensor can cause the star sensor to generate performance degradation phenomena such as the reduction of star point centroid positioning precision, the reduction of star detection sensitivity and the like after the star sensor works in space and is irradiated, the working precision and the effective service life of the star sensor are influenced, and the safe and reliable operation of the star sensor and even a satellite is seriously threatened. However, the research institutions at home and abroad do not research the mechanism of how the change of the radiation damage sensitive parameters of the CMOS active pixel sensor is transmitted to the output end of the star sensor system to cause the degradation of the system performance parameters, and the radiation damage of the star sensor system cannot be quantitatively evaluated.
The star diagonal distance is an included angle between the directions of two fixed stars under the inertia coordinate system of the equator of the geocentric. Two fixed stars A and B with right ascension and declination of (alpha) A ，δ A ) And (alpha) B ，δ B ) The star vectors are respectively:
the included angle between the two stars, i.e. the star diagonal distance, is: θ = acos (V) A ·V B )
The invention adopts a single star simulator and a collimator to simulate a fixed star on the celestial sphere in a laboratory, and realizes the change of the incident direction of the fixed star by utilizing the rotation simulation of a turntable, namely, simulates another fixed star.
Disclosure of Invention
The invention aims to deduce the degradation of performance parameters of a star sensor system from the analysis of the change of radiation damage sensitive parameters of a complementary metal oxide semiconductor active pixel sensor, and provides a star sensor radiation damage laboratory evaluation method based on the measurement precision of the star diagonal distance. The method can be used for quickly evaluating the radiation damage of the star sensor under different accumulated radiation doses under the laboratory condition, and is simple and high in practicability.
The invention relates to a star sensor radiation damage laboratory evaluation method based on star diagonal measurement precision, which comprises an electrostatic test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, wherein the electrostatic test platform (1) is respectively provided with the integrating sphere light source (2) and the sample adjusting turntable (3), the sample test board (4) is fixed on the sample adjusting turntable (3), the complementary metal oxide semiconductor active pixel sensor sample (5) is placed on the sample test board (4), the imaging lens (11) is fixed on the sample test board (4), the sample test board (4) is respectively connected with the integrating sphere light source (2) and the direct current power supply (6), the collimator (8), the auto-collimation theodolite (9) and the single-star simulator (10) are respectively arranged on two sides of the electrostatic test platform (1), the parallel light pipe (8) is connected with the single-star simulator (10), the auto-collimation theodolite (9) is connected with the auto-collimation theodolite (7), and the auto-collimation theodolite (7) is specifically connected with the electrostatic test platform for calculating step:
a. aligning an imaging lens (11) fixed on a sample test board (4) and a collimator (8) on a straight line by using an auto-collimation theodolite (9);
b. fixing a sample (5) of the irradiated complementary metal oxide semiconductor active pixel sensor on a sample test board (4), connecting the sample test board (4) with a direct-current power supply (6) and a computer (7) respectively, adjusting a single-star simulator (10) to zero and the like, adjusting a sample adjusting turntable (3) to a rotation angle of 0 degree and a pitch angle of 0 degree, imaging a simulated single-star point through an imaging lens (11), and adjusting an optical lens simultaneously to enable the star point to be clearly imaged;
c. starting to carry out dark field testing, wherein all illuminating light sources in the testing chamber need to be closed during the dark field testing, and 100 star maps are collected by a computer;
d. c, calculating the 100 star maps acquired in the step c by using a star point centroid position extraction algorithm with a threshold value to obtain a centroid coordinate position x of a single star point 0 ，y 0 ；
e. Changing the sample to adjust the rotation angle and the pitch angle of the rotary table (3), repeating the steps b, c and d to obtain the coordinate position x of the mass center of a single star point under the rotation angle and the pitch angle 1 ，y 1 ；
f. Taking the angle rotated by the sample adjusting rotary table (3) in the step e relative to the initial position of the sample adjusting rotary table (3) in the step b as a theoretical value theta of the star diagonal distance;
g. e, calculating the mass center coordinate position x of the single star point after the rotation angle and the pitch angle are changed in the step e 1 ，y 1 Conversion into direction vector V of star point 1 ；
h. Changing the sample to adjust the rotation angle and the pitch angle of the rotary table (3), repeating the steps b, c and d to obtain the coordinate position x of the mass center of a single star point under the rotation angle and the pitch angle 2 ，y 2 ；
i. D, calculating the coordinate position x of the centroid of the star point obtained in the step h 2 ，y 2 Conversion into direction vector V of star point 2 ；
j. Converting the direction vector V of the star point by using the step g and the step i 1 、V 2 Calculating a test value theta of the star-diagonal distance 1 ；
k. And f, calculating a difference value between the star diagonal distance test value calculated in the step j and the star diagonal distance theoretical value calculated in the step f, and obtaining the star diagonal distance measurement precision.
The invention relates to a star sensor radiation damage laboratory evaluation method based on star diagonal measurement precision, wherein drawing software used in dark field testing in the method is provided by the forty-fourth research institute of China electronics technology group company;
calculating 100 collected star maps according to star point and mass center calculation formulas (1) and (2) with threshold values to obtain the mass center coordinate position (x) of a single star point 0 ，y 0 )；
Wherein: i (x, y) is the gray value of the star point at (x, y), σ th Is the threshold value of star point extraction, in general, sigma th ＝3σ b Where σ is b Representing background fluctuations;
the calculated mass center coordinate position (x) of a single star point after the change of the rotation angle and the pitch angle 1 ，y 1 ) Converting into direction vector V of star point according to formulas (3) and (4) 1 ；
Wherein (x) 0 ,y 0 ) Is the centroid coordinate position of the star point when the rotary table is at the rotation angle of 0 degree and the pitch angle of 0 degree, (x) i ,y i ) The coordinate position of the center of mass of the star point corresponding to the turntable when the rotation angle is a degrees and the pitch angle is b degrees, and f is the focal length of the collimator;
using the converted direction vector V of the star point 1 、V 2 Calculating a test value theta of the star diagonal distance according to a formula (5) 1 ；
θ 1 ＝arccos(V 1 ·V 2 ) (5)
The invention relates to a star sensor radiation damage laboratory evaluation method based on star diagonal distance measurement precision, which comprises a static test platform, an integrating sphere light source, a sample adjusting rotary table, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens. The method can quickly evaluate the radiation damage of the star sensor under different accumulated radiation doses under laboratory conditions, is simple and strong in practicability, can lay a certain foundation for the research on the on-orbit attitude measurement error prediction and correction technology of the star sensor, and can provide a certain theoretical basis for the design of a high-precision star sensor.
The invention relates to a laboratory evaluation method for radiation damage of a star sensor based on star diagonal distance measurement accuracy, which is suitable for a star sensor system of any model of complementary metal oxide semiconductor active pixel sensor serving as an imaging system.
Therefore, the method is suitable for being used by a star sensor development unit, a scientific research institute and an aerospace load unit which need to estimate or master the radiation damage degree of the star sensor.
Drawings
FIG. 1 is a schematic diagram of a test system according to the present invention;
fig. 2 is a star map acquired by a computer.
Detailed Description
The present invention is described in further detail below with reference to the attached drawing figures.
Examples
The invention relates to a star sensor radiation damage laboratory evaluation method based on star diagonal measurement precision, which comprises an electrostatic test platform, an integrating sphere light source, a sample adjusting turntable, a sample test board, a complementary metal oxide semiconductor active pixel sensor sample, a direct current power supply, a computer, a collimator, an auto-collimation theodolite, a single-star simulator and an imaging lens, wherein the electrostatic test platform 1 is respectively provided with the integrating sphere light source 2 and the sample adjusting turntable 3, the sample test board 4 is fixed on the sample adjusting turntable 3, the complementary metal oxide semiconductor active pixel sensor sample 5 is placed on the sample test board 4, the imaging lens 11 is fixed on the sample test board 4, the sample test board 4 is respectively connected with the integrating sphere light source 2 and the direct current power supply 6, the collimator 8, the auto-collimation theodolite 9 and the single-star simulator 10 are respectively arranged at two sides of the electrostatic test platform 1, the collimator 8 is connected with the single-star simulator 10, the auto-collimation theodolite 9 and the parallel collimator 8 are aligned, the electrostatic test platform 1 is connected with the computer 7, and the specific operation is carried out according to the following steps:
a. aligning an imaging lens 11 fixed on the sample test board 4 and a collimator 8 on a straight line by using an auto-collimation theodolite 9;
b. fixing the irradiated complementary metal oxide semiconductor active pixel sensor sample 5 on a sample test board 4, connecting the sample test board 4 with a direct current power supply 6 and a computer 7 respectively, adjusting a single-star simulator 10 to a zero-star, adjusting a sample adjusting turntable 3 to a rotation angle of 0 DEG and a pitch angle of 0 DEG, imaging a simulated single-star point through an imaging lens 11, and adjusting an optical lens to enable the star point to be clearly imaged, wherein the complementary metal oxide semiconductor active pixel sensor sample 5 in the embodiment is irradiated by gamma, the accumulated dose is 5krad (Si)/s, the dose rate is 50krad (Si)/s, the model of the complementary metal oxide semiconductor active pixel sensor used by a star sensor is CMV4000, the resolution is 2048 multiplied by 2048, the pixel structure is 8T-APS, and the direct current power supply is set to 5V and the current is limited by 1A;
c. starting to carry out dark field testing, wherein all illuminating light sources in a testing chamber need to be closed during the dark field testing, 100 star maps are collected by a computer, and computer image collection software is provided by the forty-fourth research institute of China electronic technology group company;
d. c, calculating the 100 star maps acquired in the step c according to the star point centroid calculation formulas (1) and (2) with the threshold value to obtain the centroid coordinate position (x) of the single star point 0 ，y 0 )；
Wherein: i (x, y) is the gray value of the star point at (x, y), σ th Is a threshold value for star point extraction, generally, sigma th ＝3σ b Where σ is b Representing the background fluctuation, and calculating to obtain x 0 ＝1034.34，y 0 ＝1158.03；
e. Adjusting the rotation angle of the sample adjusting rotary table 3 to 0 degree and the pitch angle to 1 degree, repeating the steps b, c and d, and obtaining the coordinate position (x) of the mass center of a single star point under the rotation angle and the pitch angle according to the formulas (1) and (2) 1 ，y 1 ) Calculating to obtain x 1 ＝958.02，y 1 ＝1157.84；
f. Taking the angle rotated by the sample adjusting rotary table (3) in the step e relative to the initial position of the sample adjusting rotary table (3) in the step b as a theoretical value theta of the star diagonal distance, wherein the theta is 1 degree;
g. c, calculating the mass center coordinate position (x) of the single star point after the rotation angle and the pitch angle are changed in the step e 1 ，y 1 ) Converting into direction vector V of star point according to formulas (3) and (4) 1 ；
Wherein (x) 0 ,y 0 ) Is the centroid coordinate position of the star point when the rotary table is at the rotation angle of 0 degree and the pitch angle of 0 degree, (x) i ,y i ) The coordinate position of the star point mass center corresponding to the turntable when the rotation angle is a degrees and the pitch angle is b degrees is defined, and f is the focal length of the collimator;
the following are obtained by calculation: f =2m, r i ＝76.3m，
h. Adjusting the rotation angle of the sample adjusting turntable 3 to 0 degree and the pitch angle to 2 degrees, and repeating the steps b, c and d to obtain the rotation angleAnd single star point centroid coordinate position (x) at pitch angle 2 ，y 2 ) Calculating to obtain x 2 ＝881.49，y 2 ＝1157.42；
i. Converting the coordinate position (x 2, y 2) of the centroid of the star point obtained by the calculation in the step h into a direction vector V of the star point according to the formulas (3) and (4) 2 ；
The following are obtained by calculation: f =2m, r i ＝152.86m，
j. Converting the direction vector V of the star point by using the step g and the step i 1 、V 2 Calculating a test value theta of the star diagonal distance according to a formula (5) 1 ；
θ 1 ＝arccos(V 1 ·V 2 ) (5)
By calculating to obtain theta 1 ＝1.0067°；
k. And f, making a difference value between the star diagonal distance test value calculated in the step j and the star diagonal distance theoretical value calculated in the step f to obtain that the star diagonal distance measurement precision is 0.0067 degrees.
If the irradiation accumulated dose is to be calculated to the measurement accuracy of the star-diagonal distance corresponding to the complementary metal oxide semiconductor active pixel sensor samples with different sizes, the complementary metal oxide semiconductor active pixel sensor sample in the step b can be replaced by the sample after the irradiation accumulated doses are different, and the steps c to k are repeated to obtain the result.
The above description is only an embodiment of the present invention for providing a method for evaluating radiation damage of a star sensor with accuracy of measuring a star diagonal distance in a laboratory, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that any replacement or addition or subtraction within the technical scope of the present invention should be included in the scope of the present invention.
Claims (1)
1. The utility model provides a star sensor radiation damage laboratory evaluation method based on star diagonal measurement accuracy, which is characterized in that, the device that relates to in the method comprises static test platform, the integrating sphere light source, sample adjustment revolving stage, the sample test board, complementary metal oxide semiconductor active pixel sensor sample, DC power supply, the computer, the collimator, auto-collimation theodolite, single star simulator and imaging lens, be equipped with integrating sphere light source (2) and sample adjustment revolving stage (3) respectively on static test platform (1), be fixed with sample test board (4) on sample adjustment revolving stage (3), place complementary metal oxide semiconductor active pixel sensor sample (5) on sample test board (4), fix imaging lens (11) on sample test board (4), sample test board (4) are connected with integrating sphere light source (2) and DC power supply (6) respectively, be equipped with collimator (8) respectively on the both sides of static test platform (1), auto-collimation theodolite (9) and single star theodolite (10), parallel simulator (8) is connected with single star simulator (10), auto-collimation theodolite (9) and single star simulator (7) carry out the calculation according to static test platform (1) and auto-collimation platform (7):
a. aligning an imaging lens (11) fixed on a sample test board (4) and a collimator (8) on a straight line by using an auto-collimation theodolite (9);
b. fixing a sample (5) of the irradiated complementary metal oxide semiconductor active pixel sensor on a sample test board (4), connecting the sample test board (4) with a direct-current power supply (6) and a computer (7) respectively, adjusting a single-star simulator (10) to zero and the like, adjusting a sample adjusting turntable (3) to a rotation angle of 0 degree and a pitch angle of 0 degree, imaging a simulated single-star point through an imaging lens (11), and adjusting an optical lens simultaneously to enable the star point to be clearly imaged;
c. starting to perform dark field test, wherein all the illuminating light sources in the test chamber need to be closed during the dark field test, and the computer acquires 100 star maps;
d. c, calculating the 100 star maps acquired in the step c by using a star point centroid position extraction algorithm with a threshold value to obtain a centroid coordinate position x of a single star point 0 ，y 0 ；
e. Changing the sample to adjust the rotation angle and the pitch angle of the rotary table (3), repeating the steps b, c and d to obtain the coordinate position x of the mass center of a single star point under the rotation angle and the pitch angle 1 ，y 1 ；
f. Taking the angle rotated by the sample adjusting rotary table (3) in the step e relative to the initial position of the sample adjusting rotary table (3) in the step b as a theoretical value theta of the star diagonal distance;
g. e, calculating the mass center coordinate position x of the single star point after the rotation angle and the pitch angle are changed in the step e 1 ，y 1 Conversion into direction vector V of star point 1 ；
h. Changing the sample to adjust the rotation angle and the pitch angle of the rotary table (3), repeating the steps b, c and d to obtain the coordinate position x of the mass center of a single star point under the rotation angle and the pitch angle 2 ，y 2 ；
i. D, calculating the coordinate position x of the centroid of the star point obtained in the step h 2 ，y 2 Conversion into direction vector V of star point 2 ；
j. Converting the direction vector V of the star point by using the step g and the step i 1 、V 2 Calculating a test value theta of the star-diagonal distance 1 ；
k. And f, making a difference between the star-diagonal distance test value calculated in the step j and the star-diagonal distance theoretical value calculated in the step f to obtain the star-diagonal distance measurement precision.
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| CN112945270B (en) * | 2021-01-27 | 2023-12-19 | 中国科学院新疆理化技术研究所 | Star sensor radiation damage outfield evaluation method based on star-to-diagonal average measurement error |
| CN113218577A (en) * | 2021-04-15 | 2021-08-06 | 中国科学院光电技术研究所 | Outfield measurement method for star point centroid position precision of star sensor |
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