CN110690311B - Si substrate GaSe visible light detector and preparation method thereof - Google Patents
Si substrate GaSe visible light detector and preparation method thereof Download PDFInfo
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- CN110690311B CN110690311B CN201911022490.4A CN201911022490A CN110690311B CN 110690311 B CN110690311 B CN 110690311B CN 201911022490 A CN201911022490 A CN 201911022490A CN 110690311 B CN110690311 B CN 110690311B
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- 229910005543 GaSe Inorganic materials 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000002346 layers by function Substances 0.000 claims abstract description 56
- 239000010410 layer Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 26
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 239000000523 sample Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 230000004298 light response Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention discloses a Si substrate GaSe visible light detector and a preparation method thereof, comprising a Si substrate, wherein a first GaSe functional layer grown at low temperature PLD and a second GaSe functional layer grown at high temperature PLD are sequentially arranged on the upper surface of the Si substrate, the thicknesses of the first GaSe functional layer and the second GaSe functional layer are the same, and two ends of the upper surface of the second GaSe functional layer are connected with Ti/Ni/Au metal layer electrodes. The invention effectively reduces the reflection loss of the surface to visible light, enhances the resonance absorption of the visible light, and realizes high-sensitivity and high-bandwidth detection.
Description
Technical Field
The invention relates to the field of visible light detectors, in particular to a Si substrate GaSe visible light detector and a preparation method thereof.
Background
A photodetector is a device that converts an optical signal into an electrical signal using the principle of the photoelectric effect. Light is an electromagnetic wave and can be classified into various types according to the wavelength thereof. Light having a wavelength in the range of 380nm to 780nm is called visible light. Visible light detectors have important applications in the military and civilian fields due to their specific spectral response ranges.
In recent years, photodetectors based on multilayer direct bandgap two-dimensional materials (such as In 2Se3) have received widespread attention as potential alternatives to high performance photovoltaic devices. Multilayer two-dimensional materials are easier to deposit than single-layer two-dimensional materials, and therefore direct bandgap multilayer two-dimensional materials are more practical.
GaSe is a typical III-vi semiconductor material that has many excellent photovoltaic properties. GaSe is a p-type semiconductor, and has high carrier mobility (0.1 cm 2V-1s-1), low dark current and high resistivity. Meanwhile, the photoelectric property of GaSe has strong layer thickness dependence. The forbidden bandwidth becomes larger gradually with the decrease of the layer number. Furthermore, gaSe has an indirect bandgap of about 2.11eV and its direct bandgap is only 25meV greater than the indirect bandgap. Thus, at room temperature, electrons can easily be transferred between conduction band minima. Meanwhile, gaSe also has proper optical band gap, nonlinear optical property and light response characteristic. Therefore, the GaSe is suitable for being applied to the preparation research of the visible light detector.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention provides a Si substrate GaSe visible light detector and a preparation method thereof. The invention has the advantages of good quality of the grown GaSe film, high external quantum efficiency of the device, high response speed, high bandwidth and the like.
The invention adopts the following technical scheme:
The Si substrate GaSe visible light detector comprises a Si substrate, wherein a first GaSe functional layer grown at low temperature PLD and a second GaSe functional layer grown at high temperature PLD are sequentially arranged on the upper surface of the Si substrate, the thicknesses of the first GaSe functional layer and the second GaSe functional layer are the same, and two ends of the upper surface of the second GaSe functional layer are connected with Ti/Ni/Au metal layer electrodes.
Preferably, the thickness of the first GaSe functional layer and the second GaSe functional layer is 5-6nm.
Preferably, the Ti/Ni/Au metal layer electrode is an interdigital electrode.
Preferably, in the Ti/Ni/Au metal layer electrode, the thickness of the Ti metal layer is 25-35nm, the thickness of the Ni metal layer is 90-110 nm, and the thickness of the Au metal layer is 90-110 nm.
Preferably, the upper surface of the second GaSe functional layer is plated with a layer of nano-scale Ag particles.
A preparation method of a Si substrate GaSe visible light detector comprises the following steps:
S1, growing a first GaSe functional layer on a Si substrate by adopting a low-temperature PLD method, growing a second GaSe functional layer by adopting a high-temperature PLD method, and analyzing the surface morphology of a sample by adopting an AFM;
S2, uniformly coating, drying, exposing, developing and oxygen ion treatment on the upper surface of the second GaSe functional layer to determine the shape of the electrode, and evaporating Ti/Ni/Au metal layer electrodes on two ends of the upper surface of the second GaSe functional layer through an evaporation process.
Preferably, the temperature of the first GaSe functional layer grown by adopting a low-temperature PLD method is 440-460 ℃, the pulse energy is 0.46-0.50J/cm 2, and the growth time is 25-45 min.
Preferably, the temperature of growing the second GaSe functional layer by adopting a high-temperature PLD method is 840-860 ℃, the pulse energy is 0.42-0.54J/cm 2, and the growth time is 25-45 min.
Preferably, the drying time is 38-45 s, the exposure time is 5-8 s, the development time is 40-45 s, and the oxygen ion treatment time is 1.5-2.5 min.
Preferably, the growth time of the first GaSe functional layer is 30min.
The invention has the beneficial effects that:
(1) According to the invention, two GaSe functional layers are adopted to promote the transverse migration rate of carriers;
(2) The first GaSe functional layer grows on the Si substrate PLD at low temperature, so that the problem that the material can react with the substrate at an interface due to direct high-temperature growth is solved;
(3) The detector prepared by the method has high material quality, good performance, time saving, high efficiency and low energy consumption, and is beneficial to large-scale production;
(4) According to the invention, the visible light sensitization micro-nano structure design is carried out on the surface of the detection chip, so that the reflection loss of the surface to visible light is effectively reduced, the resonance absorption of the visible light is enhanced, and the high-sensitivity and high-bandwidth detection is realized.
Drawings
FIG. 1 is a schematic cross-sectional view of the structure of the present invention;
FIG. 2 is a schematic top plan view of FIG. 1;
FIG. 3 is an AFM test pattern of a first GaSe functional layer sample grown at low temperature by PLD in the examples;
FIG. 4 is a graph showing the light response characteristics of the probe prepared in example 1.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but embodiments of the present invention are not limited thereto.
Example 1
A Si substrate GaSe visible light detector is shown in fig. 1, and comprises a Si substrate 1, wherein a first GaSe functional layer 2 grown at low temperature PLD and a second GaSe functional layer 3 grown at high temperature PLD are sequentially arranged on the upper surface of the Si substrate, the thicknesses of the first GaSe functional layer and the second GaSe functional layer are the same, and two ends of the upper surface of the second GaSe functional layer are connected with Ti/Ni/Au metal layer electrodes 4.
In this embodiment, the first and second GaSe functional layers have the same structural dimensions, and preferably have a thickness of 5nm.
In this example, the Ti metal layer in the Ti/Ni/Au metal layer electrode 4 had a thickness of 30nm, the Ni metal layer had a thickness of 100nm, and the Au metal layer had a thickness of 100nm.
In the prior art, the visible light detector is prepared mainly by adopting an MOCVD method, and the film grown by the method has poor quality and high roughness.
A method for preparing a Si substrate GaSe visible light detector comprises the following steps:
S1, growing a first GaSe functional layer on a Si substrate by adopting a low-temperature PLD method, growing a second GaSe functional layer by adopting a high-temperature PLD method, and analyzing the surface morphology of a sample by adopting an AFM;
S2, uniformly coating, drying, exposing, developing and oxygen ion treatment on the upper surface of the second GaSe functional layer to determine the shape of the electrode, and evaporating Ti/Ni/Au metal layer electrodes on two ends of the upper surface of the second GaSe functional layer through an evaporation process.
As shown in fig. 2, the electrodes are interdigital electrodes, and the Ti/Ni/Au metal layer electrodes 4 are vapor-deposited on both ends of the upper surface of the second GaSe functional layer 3 by vapor deposition process.
The temperature is 450 ℃ when the first GaSe functional layer is grown by adopting a low-temperature PLD method, the pulse energy is 0.48J/cm 2, the growth time is 30min, and the evaporation rate of the electrode is 0.25nm/min.
The temperature is 850 ℃, the pulse energy is 0.48J/cm 2, the growth time is 30min, and the evaporation rate of the electrode is 0.25nm/min when the GaSe functional layer is grown by adopting a high-temperature PLD method.
The prepared visible light detector was tested, and fig. 3 is an AFM test pattern of a first GaSe functional layer sample grown epitaxially by PLD in example. It can be seen that the sample has grown GaSe material with a surface roughness of 6.5nm. Tests show that the PLD has a smoother surface and smaller roughness when the growth time is 30 min.
FIG. 4 is a graph showing the light response characteristics of the Si substrate GaSe visible light detector obtained in this example. As can be seen from the curve, the Si substrate GaSe visible light detector obtained in the embodiment has obvious wave peaks in the 620nm wave band, and the responsivity is 2.5 mu A/W. Tests show that the photoelectric detector has high responsivity in the visible light wave band range, which indicates that the photoelectric detector has high sensitivity.
Example 2
The preparation process of this example is the same as that of example 1, except that:
The temperature of the first GaSe functional layer grown by adopting a low-temperature PLD method is 440, the pulse energy is 0.46J/cm 2, and the growth time is 25min.
The temperature is 840 ℃ when the GaSe functional layer is grown by adopting a high-temperature PLD method, the pulse energy is 0.42J/cm 2, the growth time is 45min, and the evaporation rate of the electrode is 0.25nm/min.
Example 3
The preparation process of this example is the same as that of example 1, except that:
The temperature of the first GaSe functional layer grown by adopting a low-temperature PLD method is 460 ℃, the pulse energy is 0.46J/cm 2, and the growth time is 25min.
The temperature is 860 ℃ when the GaSe functional layer is grown by adopting a high-temperature PLD method, the pulse energy is 0.42J/cm 2, the growth time is 25min, and the evaporation rate of the electrode is 0.25nm/min.
The embodiments described above are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments described above, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principles of the present invention should be made in the equivalent manner, and are included in the scope of the present invention.
Claims (7)
1. The Si substrate GaSe visible light detector is characterized by comprising a Si substrate, wherein a first GaSe functional layer grown at low temperature PLD and a second GaSe functional layer grown at high temperature PLD are sequentially arranged on the upper surface of the Si substrate, the thicknesses of the first GaSe functional layer and the second GaSe functional layer are the same, and two ends of the upper surface of the second GaSe functional layer are connected with Ti/Ni/Au metal layer electrodes;
The thickness of the first GaSe functional layer and the second GaSe functional layer is 5-6nm;
The temperature of the first GaSe functional layer grown by adopting a low-temperature PLD method is 440-460 ℃, the pulse energy is 0.46-0.50J/cm 2, and the growth time is 25-45 min;
The second GaSe functional layer is grown by adopting a high-temperature PLD method, the temperature is 840-860 ℃, the pulse energy is 0.42-0.54J/cm 2, and the growth time is 25-45 min.
2. The Si-substrate GaSe visible light detector of claim 1, wherein the Ti/Ni/Au metal layer electrode is an interdigital electrode.
3. The GaSe visible light detector of claim 2, wherein in the Ti/Ni/Au metal layer electrode, the Ti metal layer has a thickness of 25-35nm, the Ni metal layer has a thickness of 90-110 nm, and the Au metal layer has a thickness of 90-110 nm.
4. The Si-substrate GaSe visible light detector of claim 1, wherein the upper surface of the second GaSe functional layer is coated with a layer of nano-sized Ag particles.
5. A method of producing a Si-substrate GaSe visible light detector as defined in any one of claims 1 to 4, comprising the steps of:
S1, growing a first GaSe functional layer on a Si substrate by adopting a low-temperature PLD method, growing a second GaSe functional layer by adopting a high-temperature PLD method, and analyzing the surface morphology of a sample by adopting an AFM;
S2, uniformly coating, drying, exposing, developing and oxygen ion treatment on the upper surface of the second GaSe functional layer to determine the shape of the electrode, and evaporating Ti/Ni/Au metal layer electrodes on two ends of the upper surface of the second GaSe functional layer through an evaporation process.
6. The method according to claim 5, wherein the baking time is 38 to 45 seconds, the exposure time is 5 to 8 seconds, the development time is 40 to 45 seconds, and the oxygen ion treatment time is 1.5 to 2.5 minutes.
7. The method of claim 5, wherein the first GaSe functional layer is grown for 30 minutes.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236469A (en) * | 2013-04-22 | 2013-08-07 | 哈尔滨工业大学 | Method for preparing gallium telluride two-dimensional structural material and method for producing flexible transparent two-dimensional structural gallium telluride optical detector |
| CN108400183A (en) * | 2018-02-28 | 2018-08-14 | 华南理工大学 | AlGaN Base Metals-semiconductor-metal type ultraviolet detector and preparation method thereof on a kind of Si substrates |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138697B2 (en) * | 2004-02-24 | 2006-11-21 | International Business Machines Corporation | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
| US7381966B2 (en) * | 2006-04-13 | 2008-06-03 | Integrated Micro Sensors, Inc. | Single-chip monolithic dual-band visible- or solar-blind photodetector |
| CN101887930A (en) * | 2010-05-26 | 2010-11-17 | 中国科学院半导体研究所 | Method for preparing silicon detector with high photoelectric response at room temperature |
| US8384179B2 (en) * | 2010-07-13 | 2013-02-26 | University Of Electronic Science And Technology Of China | Black silicon based metal-semiconductor-metal photodetector |
| US9861975B2 (en) * | 2014-12-03 | 2018-01-09 | National Applied Research Laboratories | Visible light response catalyst structure and process for manufacturing the same |
| CN107634106B (en) * | 2017-09-19 | 2019-10-08 | 北京工业大学 | A kind of two-dimensional material photodetector enhancing visible light and near infrared band light absorption |
| CN107644921B (en) * | 2017-10-18 | 2023-08-29 | 五邑大学 | Novel avalanche diode photoelectric detector and preparation method thereof |
| CN107994099B (en) * | 2017-11-23 | 2019-08-09 | 西北工业大学 | Based on two-dimentional gallium selenide material field effect transistor preparation method |
| CN108231924A (en) * | 2018-02-28 | 2018-06-29 | 华南理工大学 | It is grown in non polarity A lGaN base MSM type ultraviolet detectors in r surface sapphire substrates and preparation method thereof |
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| CN103236469A (en) * | 2013-04-22 | 2013-08-07 | 哈尔滨工业大学 | Method for preparing gallium telluride two-dimensional structural material and method for producing flexible transparent two-dimensional structural gallium telluride optical detector |
| CN108400183A (en) * | 2018-02-28 | 2018-08-14 | 华南理工大学 | AlGaN Base Metals-semiconductor-metal type ultraviolet detector and preparation method thereof on a kind of Si substrates |
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