CN110690106A - Preparation method of single crystal diamond chip - Google Patents
Preparation method of single crystal diamond chip Download PDFInfo
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- CN110690106A CN110690106A CN201911008284.8A CN201911008284A CN110690106A CN 110690106 A CN110690106 A CN 110690106A CN 201911008284 A CN201911008284 A CN 201911008284A CN 110690106 A CN110690106 A CN 110690106A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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Abstract
The invention relates to the technical field of semiconductor materials, in particular to a preparation method of a single crystal diamond chip, which comprises the steps of firstly preparing a chip deposition template, preparing a mask with a window on the chip deposition template, isolating the chip deposition template, then placing the isolated chip deposition template into a CVD reaction chamber, carrying out the growth of an N-type diamond epitaxial layer, carrying out the growth of a P-type epitaxial layer after the growth of the N-type diamond epitaxial layer is finished, then ohmic contact electrodes are prepared on the back surface of the chip deposition template and the outer side of the P-type epitaxial layer, then removing the mask to form a plurality of single crystal diamond chips arranged on the chip deposition template, the preparation method of the invention solves the problem that the diamond can not be industrialized because the material size is too small, the chip deposition template can be directly epitaxially grown into a small-sized chip on the isolated chip deposition template, and the chip can be directly packaged for use after being cut.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a preparation method of a single crystal diamond chip.
Background
The diamond material is taken as a representative of third-generation semiconductor materials, devices made of the diamond material have the characteristics which are the most excellent in third-generation semiconductors and far exceed the performances of devices made of materials such as gallium nitride, silicon carbide, aluminum nitride and the like, and the diamond material has excellent physical and chemical characteristics such as high breakdown electric field, high thermal conductivity and the like, so that the diamond material is a preferable material for preparing high-performance electronic devices.
However, because the growth difficulty of the diamond material is high, the large-size single crystal substrate is not broken through to date or is in the millimeter size level, although the relatively large size is prepared by the splicing method, the problem that dislocation and stress are easy to crack caused by splicing is solved, the further development of diamond electronic devices is restricted by the size problem, all research results are still in the laboratory stage, no method is available for realizing industrial mass production, and a large amount of technical challenges are needed for solving the size of the single crystal diamond substrate.
Aiming at the problems, in order to accelerate the industrial application of the diamond device, the invention provides a method for in-situ growth of the diamond device, which directly grows into a chip and carries out rear-end packaging application after an ohmic contact process. The idea provided by the invention basically solves the problem that the diamond cannot be industrialized because the material size is too small.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a single crystal diamond chip, which has simple process and easy preparation and can be used for the industrialized production of small-size single crystal diamond chips.
The technical scheme adopted by the invention is as follows: a method for preparing a single crystal diamond chip comprising the steps of:
the method comprises the following steps: preparing a chip deposition template;
step two: preparing a mask on the chip deposition template, forming a plurality of windows on the mask, and isolating the chip deposition template to form a plurality of chip units;
step three: putting the isolated chip deposition template in the second step into a CVD reaction chamber, and growing an N-type epitaxial layer on a chip unit;
step four: growing a P-type epitaxial layer on the chip deposition template for completing the growth of the N-type epitaxial layer in the third step, wherein the P-type epitaxial layer and the N-type epitaxial layer grow on the same side of the chip deposition template;
step five: taking the deposition template which completes the growth of the P-type epitaxial layer in the fourth step out of the CVD reaction chamber, and preparing ohmic contact electrodes on the side of the chip deposition template which is not isolated and the side of the P-type epitaxial layer which is far away from the N-type epitaxial layer respectively;
step six: and D, removing the mask from the chip deposition template with the ohmic contact electrode prepared in the fifth step to obtain a plurality of single crystal diamond chips arranged on the chip deposition template.
Further, the chip deposition template in the first step is a conductive substrate made of any one of a conductive silicon wafer, a conductive silicon carbide wafer and a conductive metal sheet by adopting a semiconductor photoetching technology.
Furthermore, the conductive substrate is provided with a diamond nucleating layer, the diamond nucleating layer is arranged on one surface of the conductive substrate by adopting a spin coating or grinding method, and the thickness of the diamond nucleating layer is 2nm-20 nm.
Further, the mask is prepared in the second step, when the chip deposition template is isolated, any one of silicon dioxide, aluminum oxide and silicon nitride is firstly deposited on the chip deposition template by adopting a PECVD process to form a mask layer, then a layer of photoresist is arranged, hardening is carried out at 350 ℃, a light explosion machine is used for carrying out light explosion, development is carried out after the light explosion of the photoresist is finished, a region needing to deposit diamond is exposed, an eye film layer of the exposed region is etched by using a BOE process, finally the photoresist is removed by using a degumming agent, and the isolation of the chip deposition template is realized through the mask.
Further, the N-type epitaxial layer in the third step is doped with any one of nitrogen, sulfur, lithium and phosphorus with the doping concentration of 1 x 1014/(cm3)～9*1018/(cm3) The N-type epitaxial layer is doped with electron majority carriers, and the carrier concentration is 5 x 1014/cm3。
Further, the P-type epitaxial layer in the fourth step is doped with an element containing boron at a doping concentration of 1 × 1014/(c)m3)～9*1021/(cm3) The P type epitaxial layer is doped with majority hole carriers, and the carrier concentration is 8 x 1015/cm3
Further, the ohmic contact electrode in the fifth step is made of any one or more of titanium, aluminum, nickel, cadmium and copper.
Further, the mask in the second step is made by a semiconductor lithography process.
And further, the ohmic contact electrode in the fifth step is manufactured by adopting any one metal evaporation process of electron beam evaporation, thermal evaporation vacuum plating and magnetron sputtering evaporation, after evaporation, the chip deposition template is placed into an alloy furnace, and the 60S alloy process is carried out under the condition of 850 ℃ under the protection of nitrogen.
And further, cutting and separating the plurality of single crystal diamond chips in the step six by adopting a laser scribing or semiconductor process to obtain a plurality of single crystal diamond chips capable of being used for chip packaging.
The invention has the following beneficial effects:
the invention separates the chip deposition template by preparing the chip deposition template, and preparing a mask with a window on the chip deposition template, then putting the chip deposition template into a CVD reaction chamber to grow an N-type diamond epitaxial layer, and after the growth of the N-type diamond epitaxial layer is finished, then growing a P-type epitaxial layer, then preparing ohmic contact electrodes on the back of the chip deposition template and the outer side of the P-type epitaxial layer, and then removing the mask to form a plurality of single crystal diamond chips arranged on the chip deposition template. And directly packaging for use after cutting.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of a conductive substrate of the present invention;
FIG. 3 is a schematic structural diagram of a conductive substrate of the present invention after a nucleation layer is disposed thereon;
FIG. 4 is a schematic diagram of the structure of FIG. 3 after the mask is disposed;
fig. 5 is a schematic structural view after an N-type epitaxial layer is disposed in fig. 4;
FIG. 6 is a schematic structural diagram of FIG. 5 after a P-type epitaxial layer is disposed thereon;
FIG. 7 is a schematic structural view after an ohmic contact layer is provided in FIG. 6;
FIG. 8 is a schematic view of the structure of FIG. 7 after the mask is removed;
description of reference numerals: 1. the single-crystal diamond chip comprises a conductive substrate, 2. a nucleating layer, 3. a mask, 4. an N-type epitaxial layer, 5. a P-type epitaxial layer, 6. an ohmic contact electrode and 7. a single-crystal diamond chip.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 1 to 8, the method for manufacturing a single crystal diamond chip according to the present embodiment includes the steps of:
the method comprises the following steps: preparing a chip deposition template;
step two: preparing a mask 3 on a chip deposition template, forming a plurality of windows on the mask 3, isolating the chip deposition template, opening the windows on the mask 3 to expose the chip deposition template, setting the size of the exposed chip deposition template according to the size of a chip to be finally prepared, defining a growth area for subsequent diamond deposition, and only meeting the requirements of later cutting and separation without setting the distance value between the windows;
step three: putting the isolated chip deposition template in the step two into a CVD reaction chamber, carrying out deposition growth of an N-type epitaxial layer 4 on one side of the chip deposition template, depositing an N-type diamond into a conductive diffusion layer, and providing the functions of electron majority carrier diffusion and conductivity by the functional layer;
step four: growing a P-type epitaxial layer 4 on a chip deposition template for finishing the growth of the N-type epitaxial layer 4 in the third step, wherein the P-type epitaxial layer 4 and the N-type epitaxial layer 4 are deposited and grown on the same side of the chip deposition template, and a P-type diamond is deposited as a conductive diffusion layer, so that the functional layer provides the functions of hole majority carrier diffusion and conductivity;
step five: taking the deposition template which finishes the growth of the P-type epitaxial layer 4 in the fourth step out of the CVD reaction chamber, and preparing an ohmic contact electrode 6 on the other side of the chip deposition template and the side of the P-type epitaxial layer 4 far away from the N-type epitaxial layer 4 respectively;
step six: and removing the mask 3 from the chip deposition template with the ohmic contact electrodes 6 prepared in the fifth step to obtain a plurality of single crystal diamond chips 7 arranged on the chip deposition template.
Specifically, the die deposition template of the present embodiment is selected to be 2 inches<111>A conductive silicon substrate with a single polished surface in a crystal orientation is provided, a thin carbon atom nucleation layer 2 is arranged on the polished surface of the silicon substrate by a spin coating method or a grinding method, which is favorable for diamond deposition, because the conductive substrate 1 used in the embodiment is a silicon substrate, diamond can be easily nucleated on the silicon substrate, the process steps of the carbon atom nucleation layer 2 can be omitted, but if a base plate can not directly deposit diamond materials, the carbon atom nucleation layer 2 needs to be prepared, then a silicon dioxide mask 3 layer is deposited on the silicon substrate by PECVD, the thickness is 800nm, a layer of photoresist with the thickness of 3 mu m is arranged, film hardening is carried out at the temperature of 350 ℃, then the chip is exposed by using a light explosion machine, a mask plate is developed after the photoresist is exposed, the silicon dioxide area where the diamond needs to be deposited is exposed, the silicon dioxide in the area is etched by BOE, finally, removing the photoresist by using a degumming agent, finally realizing the isolation of the chip deposition template through a silicon dioxide medium, wherein the specific isolation effect can be shown in figure 4, and then putting the prepared chip deposition template isolation substrate into an MPCVD (multi-layer plasma chemical vapor deposition) device for conducting deposition of N-type diamond, wherein the carrier concentration is 5 x 1014/cm3500nm thick, and changing the doping source as shown in FIG. 5, and performing P-type diamond conductive layer deposition growth with carrier concentration of 8 × 1015/cm3The thickness is 300nm, and the structure is shown in the figure6, then, utilizing an electron beam evaporation device to carry out P-type ohmic contact metal evaporation, selecting metals to be evaporated to be titanium, aluminum, nickel and gold, wherein the thicknesses of the metals are respectively 20nm, 60nm, 120nm and 60nm, carrying out metal evaporation on the other side of the chip deposition template by adopting the same evaporation process, as shown in figure 7, after the evaporation is finished, putting the substrate into an alloy furnace, carrying out a 60-second alloy process under the condition of 850 ℃, after the alloy process is finished, removing the silicon dioxide mask 3, soaking in BOE melt for 1min, enabling the silicon dioxide mask 3 to fall off, enabling the diamond deposited on the surface of the silicon dioxide mask to fall off, further forming a PN junction single crystal diamond diode which is not connected on the substrate, as shown in figure 8, then cutting along the area originally provided with the mask 3 by utilizing a laser with the wavelength of 360nm, and finally forming an independent diamond PN junction single crystal diamond chip 7, the preparation method of the invention saves the chip process flow of the semiconductor, on the other hand, the preparation method of the invention makes the diamond overcome the problem of preparing the large-size substrate, can directly grow into the small-size chip on the chip deposition template after the isolation in an epitaxial way, and can be directly packaged for use after the cutting.
In the drawings of the above embodiments, it should be noted that fig. 1 is a schematic structural view of a single crystal diamond chip 7 arranged on a chip deposition template, which is manufactured by omitting a nucleation layer manufacturing step in a manufacturing step of the present invention, fig. 1 to 4 are schematic structural views from a top view, and a is a front view of fig. a.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method for preparing a single crystal diamond chip, comprising the steps of:
the method comprises the following steps: preparing a chip deposition template;
step two: preparing a mask on the chip deposition template, forming a plurality of windows on the mask, and isolating the chip deposition template to form a plurality of chip units;
step three: putting the isolated chip deposition template in the second step into a CVD reaction chamber, and growing an N-type epitaxial layer on a chip unit;
step four: growing a P-type epitaxial layer on the chip deposition template for completing the growth of the N-type epitaxial layer in the third step, wherein the P-type epitaxial layer and the N-type epitaxial layer grow on the same side of the chip deposition template;
step five: taking the deposition template which completes the growth of the P-type epitaxial layer in the fourth step out of the CVD reaction chamber, and preparing ohmic contact electrodes on the side of the chip deposition template which is not isolated and the side of the P-type epitaxial layer which is far away from the N-type epitaxial layer respectively;
step six: and D, removing the mask from the chip deposition template with the ohmic contact electrode prepared in the fifth step to obtain a plurality of single crystal diamond chips arranged on the chip deposition template.
2. A method of preparing a single crystal diamond chip according to claim 1, wherein the chip deposition template in step one is a conductive substrate made of any one of a conductive silicon wafer, a conductive silicon carbide wafer and a conductive metal wafer using semiconductor lithography.
3. A method of preparing a single crystal diamond chip according to claim 2, wherein the conductive substrate is provided with a diamond nucleation layer, the diamond nucleation layer is provided on one side of the conductive substrate by spin coating or grinding, and the thickness of the diamond nucleation layer is 2nm to 20 nm.
4. A method of producing a single crystal diamond chip according to claim 1,
preparing the mask in the second step, when isolating the chip deposition template, firstly depositing a mask layer on the chip deposition template by adopting a PECVD (plasma enhanced chemical vapor deposition) process, then arranging a layer of photoresist, hardening the film at 350 ℃, performing light explosion by using a light explosion machine, developing after the light explosion of the photoresist is finished, exposing a region needing to deposit diamond, etching away an eye film layer of the exposed region by using a BOE (biaxially oriented extrusion) process, finally removing the photoresist by using a degumming agent, and realizing the isolation of the chip deposition template through the mask.
5. A method for preparing a single crystal diamond chip according to claim 1, wherein the N-type epitaxial layer in step three is doped with any of nitrogen, sulfur, lithium and phosphorus at a concentration of 1 x 1014/(cm3)～9*1018/(cm3) The N-type epitaxial layer is doped with electron majority carriers, and the carrier concentration is 5 x 1014/cm3。
6. A method of manufacturing a single crystal diamond chip according to claim 1, wherein the P-type epitaxial layer in step four is doped with an element including boron at a doping concentration of 1 x 1014/(cm)3)～9*1021/(cm3) The P type epitaxial layer is doped with majority hole carriers, and the carrier concentration is 8 x 1015/cm3。
7. A method of making a single crystal diamond chip according to claim 1, wherein the ohmic contact electrode in step five is made of any one or more of titanium, aluminum, nickel, cadmium and copper.
8. A method of manufacturing a single crystal diamond chip according to claim 1, wherein the mask in step two is made by a semiconductor photolithography process.
9. A method for preparing a single crystal diamond chip as in claim 1, wherein the ohmic contact electrode in step five is formed by any one of electron beam evaporation, thermal evaporation vacuum plating and magnetron sputtering evaporation, after evaporation, the chip deposition template is placed in an alloy furnace, and a 60S alloy process is performed at 850 ℃ under the protection of nitrogen.
10. The method for preparing a single crystal diamond chip according to claim 1, wherein the plurality of single crystal diamond chips obtained in the step six are cut and separated by a laser scribing or a semiconductor process, so that a plurality of single crystal diamond chips which can be used for chip packaging are obtained.
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| CN201911008284.8A CN110690106A (en) | 2019-10-22 | 2019-10-22 | Preparation method of single crystal diamond chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115198360A (en) * | 2022-07-27 | 2022-10-18 | 内蒙古科技大学 | Controllable preparation method of monocrystal diamond nano-pillar array cluster |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1218997A (en) * | 1997-09-19 | 1999-06-09 | 西门子公司 | Method for preparing multiple semiconductors |
| CN104851920A (en) * | 2014-02-17 | 2015-08-19 | 株式会社东芝 | Semiconductor device and method of manufacturing the same |
| US10141456B2 (en) * | 2016-10-17 | 2018-11-27 | Fraunhofer Gesellschaft Zur Forderung Der Angew. Forschung E.V. | Schottky diode and method for its manufacturing |
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- 2019-10-22 CN CN201911008284.8A patent/CN110690106A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1218997A (en) * | 1997-09-19 | 1999-06-09 | 西门子公司 | Method for preparing multiple semiconductors |
| CN104851920A (en) * | 2014-02-17 | 2015-08-19 | 株式会社东芝 | Semiconductor device and method of manufacturing the same |
| US10141456B2 (en) * | 2016-10-17 | 2018-11-27 | Fraunhofer Gesellschaft Zur Forderung Der Angew. Forschung E.V. | Schottky diode and method for its manufacturing |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115198360A (en) * | 2022-07-27 | 2022-10-18 | 内蒙古科技大学 | Controllable preparation method of monocrystal diamond nano-pillar array cluster |
| CN115198360B (en) * | 2022-07-27 | 2023-08-22 | 内蒙古科技大学 | Method for controllably preparing monocrystal diamond nano-pillar array cluster |
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Application publication date: 20200114 |