CN110676206A - Manufacturing method for preparing super-thick adhesive film based on bonding process - Google Patents
Manufacturing method for preparing super-thick adhesive film based on bonding process Download PDFInfo
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- CN110676206A CN110676206A CN201910904884.6A CN201910904884A CN110676206A CN 110676206 A CN110676206 A CN 110676206A CN 201910904884 A CN201910904884 A CN 201910904884A CN 110676206 A CN110676206 A CN 110676206A
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- carrier plate
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000002313 adhesive film Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000001681 protective effect Effects 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a manufacturing method for preparing an ultra-thick adhesive film based on a bonding process, which specifically comprises the following steps: 101) an auxiliary carrier plate manufacturing step, 102) a circuit carrier plate manufacturing step, 103) a bonding step and 104) an auxiliary carrier plate removing step; the invention provides a manufacturing method for preparing an ultra-thick adhesive film based on a bonding process, which has an ultra-thick protective film and high yield.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method for preparing an ultra-thick adhesive film based on a bonding process.
Background
The wafer level packaging technology is the most widely used technology in the field of advanced packaging, and particularly for consumer products, the wafer level packaging technology is widely applied to mobile electronic equipment and micro-functional equipment due to the advantages of small size, light weight, thin thickness and the like.
The wafer level packaging generally involves processes including dielectric layer coating, circuit arrangement, interconnection tin ball implantation and the like, and in the dielectric layer coating link, PI glue is required to be coated on the surface of a wafer, so that the circuit on the surface of the wafer can be completely covered by the dielectric layer, the circuit is protected from being corroded, and the upper layer and the lower layer of metal are insulated.
However, in practical applications, for some special processes, the thickness of the metal line is large, and for coating the PI layer to cover the metal line, the process difficulty is increasing, especially for metal lines with a height of more than 30um, when the PI layer crosses over the surface of the metal line during spin coating, the PI layer often cannot continue to cover the back of the metal line, but directly flies out under the action of centripetal force. This process often requires the application of three layers of PI to just barely cover both sides of the circuit, increasing cost and reducing product reliability.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides the manufacturing method for preparing the super-thick adhesive film based on the bonding process, which has the super-thick protective film and high yield.
The technical scheme of the invention is as follows:
a manufacturing method for preparing an ultra-thick adhesive film based on a bonding process specifically comprises the following steps:
101) an auxiliary carrier plate manufacturing step: manufacturing a separation layer on the surface of the auxiliary carrier plate, wherein the separation layer is manufactured by adopting a spraying method, a spin-coating method or a direct pasting process; coating photoresist on the surface of the separation layer, wherein the coating mode is realized by adopting a spraying method, a spin-coating method or a direct pasting process; wherein, an auxiliary thick photoresist film is obtained by coating photoresist for many times, and the thickness of the auxiliary thick photoresist film is between 10nm and 1000 um;
102) a circuit carrier plate manufacturing step: coating photoresist on the surface of the circuit carrier plate distributed with the circuit metal wires, wherein the coating mode is realized by adopting a spraying method, a spin-coating method or a direct pasting process; wherein, a protective thick glue film is obtained by coating photoresist for many times, and the thickness of the protective thick glue film is between 10nm and 1000 um; leveling the protective thick glue film by soft baking to realize the leveling maximization of the photoresist on the surface of the circuit carrier plate;
103) bonding: carrying out hot-pressing bonding on one side of the circuit carrier plate in the step 101) provided with the protective thick adhesive film and one side of the auxiliary carrier plate in the step 102) provided with the auxiliary thick adhesive film in a vacuum environment, so that the protective thick adhesive film and the auxiliary thick adhesive film are bonded together to form a protective film;
104) removing the auxiliary carrier plate: and separating the auxiliary carrier plate from the circuit carrier plate by heating or light irradiation, and removing the separation layer on the surface of the protective film by a dry etching or wet cleaning process to obtain the circuit carrier plate coated with the protective film.
Further, the photoresist adopts positive photoresist or negative photoresist.
Furthermore, the auxiliary carrier plate is made of one of 4, 6, 8 and 12 inches, the thickness ranges from 200um to 2000um, and one of silicon, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane material is adopted.
Further, the height of the circuit metal wire ranges from 10um to 200um, and the width ranges from 1um to 1000 um; the circuit metal wire adopts a one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
Compared with the prior art, the invention has the advantages that: the method comprises the steps of manufacturing corresponding thick glue films on the surfaces of the auxiliary carrier plate and the circuit carrier plate, then laminating the thick glue films on the auxiliary carrier plate and the circuit carrier plate under the condition of approaching vacuum through a heating bonding process to form an ultra-thick protective film on the surface of the circuit carrier plate, and then removing the auxiliary carrier plate, so that the purpose of coating an ultra-thick PI layer (photoresist) on the surface of the circuit carrier plate is achieved.
Drawings
FIG. 1 is a schematic view of an auxiliary thick adhesive film disposed on an auxiliary carrier according to the present invention;
FIG. 2 is a schematic view of a circuit carrier with a protective thick adhesive film thereon according to the present invention;
FIG. 3 is a schematic representation of the invention after thermal bonding of FIGS. 1 and 2;
fig. 4 is a schematic view of the thermal bonding of fig. 3 by pressure on a circuit carrier according to the present invention;
FIG. 5 is a schematic view of the thermal bonding process of FIG. 3 performed by pressing on an auxiliary carrier plate according to the present invention;
FIG. 6 is a schematic view of the carrier plate of FIG. 3 with the auxiliary carrier plate removed according to the present invention;
fig. 7 is a schematic structural diagram of the present invention.
The labels in the figure are: an auxiliary carrier plate 1, a separation layer 2, an auxiliary thick adhesive film 3, a circuit carrier plate 4, a protective thick adhesive film 5, a protective film 6 and a circuit metal wire 7.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described with reference to the following figures and detailed description.
Example 1:
as shown in fig. 1 to 7, a method for manufacturing an ultra-thick adhesive film based on a bonding process specifically includes the following steps:
101) the manufacturing steps of the auxiliary carrier plate 1 are as follows: manufacturing a separation layer 2 on the surface of the auxiliary carrier plate 1, wherein the separation layer 2 is manufactured by adopting a spraying method, a spin-coating method or a direct sticking process; the separation layer 2 is between 10nm and 1000um thick. The surface of the separation layer 2 is coated with photoresist which can be positive photoresist or negative photoresist. The coating mode is realized by adopting a spraying method, a spin-coating method or a direct pasting process. The auxiliary thick film 3 is obtained by coating photoresist for multiple times, and the thickness of the auxiliary thick film 3 is between 10nm and 1000 um.
The auxiliary carrier plate 1 in this step includes one of 4, 6, 8, 12 inch wafers, has a thickness ranging from 200um to 2000um, and can be made of other materials, including inorganic materials such as glass, quartz, silicon carbide, alumina, and the like, or organic materials such as epoxy resin, polyurethane, and the like, and the main function of the auxiliary carrier plate is to provide a supporting function.
102) A circuit carrier plate 4 manufacturing step: and coating photoresist on the surface of the circuit carrier plate 4 distributed with the circuit metal wires 7 in a spraying method, a spin-coating method or a direct pasting process. The protective thick glue film 5 is leveled by soft baking, and the leveling maximization of the photoresist on the surface of the circuit carrier plate 4 is realized. The protective thick film 5 is obtained by coating photoresist for multiple times, and the thickness of the protective thick film 5 is between 10nm and 1000 um; the circuit metal lines 7 range in height from 10um to 200um and in width from 1um to 1000 um. The structure of the circuit metal wire 7 may be one layer or multiple layers, and the material may be one or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, and the like.
The circuit carrier 4 of this step includes one of 4, 6, 8, 12 inches wafer, and the thickness range is 200um to 2000um, and can be other materials, including inorganic materials such as glass, quartz, silicon carbide, alumina, and also can be organic materials such as epoxy resin, polyurethane, and its main function is to provide a supporting function.
103) Bonding: and (3) carrying out hot-pressing bonding on one side of the circuit carrier plate 4 provided with the protective thick adhesive film 5 in the step 101) and one side of the auxiliary carrier plate 1 provided with the auxiliary thick adhesive film 3 in the step 102) in a vacuum environment, so that the protective thick adhesive film 5 and the auxiliary thick adhesive film 3 are bonded together to form a protective film 6, wherein the thickness of the protective film 6 is higher than the height of the circuit metal wire 7.
104) Removing the auxiliary carrier plate 1: and separating the auxiliary carrier plate 1 from the circuit carrier plate 4 by heating or light irradiation, and removing the separation layer 2 on the surface of the protective film 6 by a dry etching or wet cleaning process to obtain the circuit carrier plate 4 coated with the protective film 6.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (4)
1. A manufacturing method for preparing an ultra-thick adhesive film based on a bonding process is characterized by comprising the following steps: the method specifically comprises the following steps:
101) an auxiliary carrier plate manufacturing step: manufacturing a separation layer on the surface of the auxiliary carrier plate, wherein the separation layer is manufactured by adopting a spraying method, a spin-coating method or a direct pasting process; coating photoresist on the surface of the separation layer, wherein the coating mode is realized by adopting a spraying method, a spin-coating method or a direct pasting process; wherein, an auxiliary thick photoresist film is obtained by coating photoresist for many times, and the thickness of the auxiliary thick photoresist film is between 10nm and 1000 um;
102) a circuit carrier plate manufacturing step: coating photoresist on the surface of the circuit carrier plate distributed with the circuit metal wires, wherein the coating mode is realized by adopting a spraying method, a spin-coating method or a direct pasting process; wherein, a protective thick glue film is obtained by coating photoresist for many times, and the thickness of the protective thick glue film is between 10nm and 1000 um; leveling the protective thick glue film by soft baking to realize the leveling maximization of the photoresist on the surface of the circuit carrier plate;
103) bonding: carrying out hot-pressing bonding on one side of the circuit carrier plate in the step 101) provided with the protective thick adhesive film and one side of the auxiliary carrier plate in the step 102) provided with the auxiliary thick adhesive film in a vacuum environment, so that the protective thick adhesive film and the auxiliary thick adhesive film are bonded together to form a protective film;
104) removing the auxiliary carrier plate: and separating the auxiliary carrier plate from the circuit carrier plate by heating or light irradiation, and removing the separation layer on the surface of the protective film by a dry etching or wet cleaning process to obtain the circuit carrier plate coated with the protective film.
2. The manufacturing method of preparing super-thick glue film based on bonding process as claimed in claim 1, wherein: the photoresist adopts positive photoresist or negative photoresist.
3. The manufacturing method of preparing super-thick glue film based on bonding process as claimed in claim 1, wherein: the auxiliary carrier plate is made of one of 4, 6, 8 and 12 inches in size, the thickness ranges from 200um to 2000um, and one of silicon, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane materials is adopted.
4. The manufacturing method of preparing super-thick glue film based on bonding process as claimed in claim 1, wherein: the height range of the circuit metal wire is between 10um and 200um, and the width is between 1um and 1000 um; the circuit metal wire adopts a one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910904884.6A CN110676206A (en) | 2019-09-24 | 2019-09-24 | Manufacturing method for preparing super-thick adhesive film based on bonding process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910904884.6A CN110676206A (en) | 2019-09-24 | 2019-09-24 | Manufacturing method for preparing super-thick adhesive film based on bonding process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110676206A true CN110676206A (en) | 2020-01-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910904884.6A Pending CN110676206A (en) | 2019-09-24 | 2019-09-24 | Manufacturing method for preparing super-thick adhesive film based on bonding process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110676206A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257830A (en) * | 1990-03-07 | 1991-11-18 | Matsushita Electron Corp | Semiconductor device |
| TW483136B (en) * | 2001-03-22 | 2002-04-11 | Apack Technologies Inc | Bump process |
| TW201425028A (en) * | 2012-11-28 | 2014-07-01 | Samsung Electro Mech | Resist and method for manufacturing the same |
| CN105405780A (en) * | 2015-12-16 | 2016-03-16 | 华进半导体封装先导技术研发中心有限公司 | Wafer ball-mounting process adopting template-free method |
| CN107316818A (en) * | 2017-06-20 | 2017-11-03 | 上海图正信息科技股份有限公司 | The preparation method and encapsulating structure of chip package module |
-
2019
- 2019-09-24 CN CN201910904884.6A patent/CN110676206A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257830A (en) * | 1990-03-07 | 1991-11-18 | Matsushita Electron Corp | Semiconductor device |
| TW483136B (en) * | 2001-03-22 | 2002-04-11 | Apack Technologies Inc | Bump process |
| TW201425028A (en) * | 2012-11-28 | 2014-07-01 | Samsung Electro Mech | Resist and method for manufacturing the same |
| CN105405780A (en) * | 2015-12-16 | 2016-03-16 | 华进半导体封装先导技术研发中心有限公司 | Wafer ball-mounting process adopting template-free method |
| CN107316818A (en) * | 2017-06-20 | 2017-11-03 | 上海图正信息科技股份有限公司 | The preparation method and encapsulating structure of chip package module |
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