CN110661514A - Quick switch optical isolation solid relay - Google Patents
Quick switch optical isolation solid relay Download PDFInfo
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- CN110661514A CN110661514A CN201911057832.6A CN201911057832A CN110661514A CN 110661514 A CN110661514 A CN 110661514A CN 201911057832 A CN201911057832 A CN 201911057832A CN 110661514 A CN110661514 A CN 110661514A
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- 239000007787 solid Substances 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- 238000002955 isolation Methods 0.000 title claims abstract description 15
- 230000005669 field effect Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 238000010586 diagram Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
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Abstract
The invention discloses a quick switch optical isolation solid relay, which comprises an input circuit arranged on a substrate and an output circuit arranged on a base; the input circuit comprises 2 light emitting diodes R2 and R3; the light emitting diodes R2 and R3 are connected in series or in parallel to form the input end of the input circuit; the output circuit comprises a photovoltaic diode array R4, power field effect transistors Q1 and Q2; one end of the photovoltaic diode array R4 is simultaneously connected with the sources of the power field effect transistors Q1 and Q2, the other end of the photovoltaic diode array R4 is simultaneously connected with the grids of the power field effect transistors Q1 and Q2, and the drains of the power field effect transistors Q1 and Q2 form the output end of the output circuit; the input circuit leds R2 and R3 are coupled to the output circuit pv diode array R4 by direct illumination. The invention can improve the switching rate and the switching speed of the relay and simultaneously improve the temperature stability of the relay.
Description
Technical Field
The invention relates to the technical field of solid relays, in particular to a quick-switching optical isolation solid relay.
Background
With the development of electronic industries such as digitalization, microelectronics, photoelectronics and the like, the processing information of corresponding complete machines and systems, various communication and network switching equipment, a remote measuring system and the like is larger and larger, the required speed is higher and higher, and the requirement on environmental adaptability is higher and higher, so that higher requirements are provided for the solid relay. The solid relay is widely applied to systems of spaceflight, aviation, weaponry, ships and the like and has the switching function. However, the input part of the traditional optical isolation solid relay only adopts one light emitting diode to drive the photovoltaic diode array of the output part, but the driving capability is low due to the limited luminous intensity of one light emitting diode and the limited receiving surface of the photovoltaic diode array, and further the switching-on speed of the whole optical isolation solid relay is low.
Disclosure of Invention
The invention solves the problem of slow switching speed of the existing optical isolation solid relay, and provides an optical isolation solid relay capable of being switched on and off rapidly.
In order to solve the problems, the invention is realized by the following technical scheme:
the quick switch optical isolation solid relay comprises an input circuit arranged on a substrate and an output circuit arranged on a base; the input circuit comprises 2 light emitting diodes R2 and R3; the light emitting diodes R2 and R3 are connected in series or in parallel to form the input end of the input circuit; the output circuit comprises a photovoltaic diode array R4, power field effect transistors Q1 and Q2; one end of the photovoltaic diode array R4 is simultaneously connected with the sources of the power field effect transistors Q1 and Q2, the other end of the photovoltaic diode array R4 is simultaneously connected with the grids of the power field effect transistors Q1 and Q2, and the drains of the power field effect transistors Q1 and Q2 form the output end of the output circuit; the input circuit leds R2 and R3 are coupled to the output circuit pv diode array R4 by direct illumination.
In the above scheme, the input circuit further includes an anti-reverse diode R1; the anode of the anti-reverse diode R1 is connected with the cathodes of the light emitting diodes R2 and R3 which are connected in series or in parallel, and the cathode of the anti-reverse diode R1 is connected with the cathode of the input end of the input circuit.
In the above scheme, the output circuit further includes a voltage regulator R5; two ends of the voltage-stabilizing tube R5 are connected in parallel with two ends of the photovoltaic diode array R4.
In the above embodiment, the light emitting diodes R2 and R3 are offset from each other on the surface of the substrate.
In the scheme, the substrate and the base are both provided with the positioning counter bores of each component.
Compared with the prior art, the invention has the following characteristics:
1. the input end adopts two light-emitting diodes (connected in series or in parallel) to simultaneously illuminate one light-emitting diode array, so that the illumination intensity is increased, the conversion rate and the switching-on speed are improved, the problem of light loss is made up to a certain extent under the high-temperature condition, and the problem of temperature stability is solved;
2. the input is connected with an anti-reverse diode, so that the damage condition caused by back pressure when the optical isolation device is applied is effectively avoided;
3. a voltage stabilizing tube is added in the output circuit, so that the electrostatic sensitivity is higher and the stability is stronger;
4. the positions of the light emitting diode and the photovoltaic diode array in the substrate and the base adopt a sinking structure design, so that the height is effectively reduced, and a positioning effect is realized on a device; the photoelectric conversion efficiency and the switching-on speed are improved; the consistency of conversion parameters is optimized, so that the method can be suitable for more occasions;
5. compared with the same type of products, the height is reduced, the integration level of the products is improved, the miniaturization design of the products is realized, and the height is only 2.8 mm.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional structure of a fast switch optical isolation solid relay.
Fig. 2 is a schematic diagram of four circuits of an input circuit and an output circuit.
Fig. 3 is two schematic perspective views of the substrate.
Fig. 4 is a schematic perspective view of the base.
Reference numbers in the figures: 1. a substrate; 2. a base; 3. an input circuit; 4. an output circuit; 5. and positioning the counter bore.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to specific examples.
A quick switch optical isolation solid relay is shown in figure 1 and mainly comprises a substrate 1, a base 2, an input circuit 3 and an output circuit 4. The input circuit 3 is provided on the substrate 1, and the output circuit 4 is provided on the base 2. In this embodiment, the substrate 1 and the base 2 are made of ceramic materials and are parallel to each other, and the two are located at different levels, so that the input circuit 3 and the output circuit 4 are physically separated. The input circuit 3 is arranged on the lower surface of the substrate 1; the output circuit 4 is disposed on the upper surface of the base 2, and the output terminals of the input circuit 3, i.e., the light emitting diodes R2 and R3, correspond to the input terminals of the output circuit 4, i.e., the photovoltaic diode array R4, in the vertical direction, and the light emitting part of the input circuit 3 is optically coupled to the receiving part of the output circuit 4 by direct illumination.
The circuits of the input circuit 3 and the output circuit 4 specifically include 4 specific circuit structures:
the first circuit structure is shown in fig. 2 (a):
the input circuit 3 includes 2 light emitting diodes R2 and R3, and an anti-reverse diode R1. The light emitting diodes R2 and R3 are connected in series, the anode end of the series connection forms the input end anode of the input circuit 3, the cathode end of the series connection is connected with the anode of the anti-reverse diode R1, and the cathode of the anti-reverse diode R1 forms the input end cathode of the input circuit 3.
The output circuit 4 includes a photovoltaic diode array R4, power field effect transistors Q1 and Q2, and a voltage regulator R5. The anode terminal of the photovoltaic diode array R4 is connected to the sources of the power field effect transistors Q1 and Q2 at the same time. The cathode terminal of the photovoltaic diode array R4 is connected with the gates of the power field effect transistors Q1 and Q2 at the same time. The drain of the power fet Q1 forms the positive terminal of the output circuit 4, and the drain of the power fet Q2 forms the negative terminal of the output circuit 4. The anode of the voltage regulator tube R5 is connected with the cathode end of the photovoltaic diode array R4. The cathode of the voltage regulator tube R5 is connected with the anode end of the photovoltaic diode array R4.
The second circuit structure is shown in fig. 2 (b):
the input circuit 3 includes 2 light emitting diodes R2 and R3, and an anti-reverse diode R1. The light emitting diodes R2 and R3 are connected in parallel, the anode ends of the parallel connected light emitting diodes R2 and R3 form the anode of the input end of the input circuit 3, the cathode ends of the parallel connected light emitting diodes R1 are connected with the anode of the anti-reverse diode R1, and the cathode of the anti-reverse diode R1 forms the cathode of the input end of the input circuit 3.
The output circuit 4 includes a photovoltaic diode array R4, power field effect transistors Q1 and Q2, and a voltage regulator R5. The anode terminal of the photovoltaic diode array R4 is connected to the sources of the power field effect transistors Q1 and Q2 at the same time. The cathode terminal of the photovoltaic diode array R4 is connected with the gates of the power field effect transistors Q1 and Q2 at the same time. The drain of the power fet Q1 forms the positive terminal of the output circuit 4, and the drain of the power fet Q2 forms the negative terminal of the output circuit 4. The anode of the voltage regulator tube R5 is connected with the cathode end of the photovoltaic diode array R4. The cathode of the voltage regulator tube R5 is connected with the anode end of the photovoltaic diode array R4.
The third circuit structure is shown in fig. 2 (c):
the input circuit 3 includes 2 light emitting diodes R2 and R3, and an anti-reverse diode R1. The light emitting diodes R2 and R3 are connected in series, the anode end of the series connection forms the input end anode of the input circuit 3, the cathode end of the series connection is connected with the anode of the anti-reverse diode R1, and the cathode of the anti-reverse diode R1 forms the input end cathode of the input circuit 3.
The output circuit 4 includes a photovoltaic diode array R4, power field effect transistors Q1 and Q2, and a voltage regulator R5. The anode terminal of the photovoltaic diode array R4 is connected to the gates of the power field effect transistors Q1 and Q2 simultaneously. The cathode terminal of the photovoltaic diode array R4 is connected with the drains of the power field effect transistors Q1 and Q2 at the same time. The drain of the power fet Q1 forms the positive terminal of the output circuit 4, and the drain of the power fet Q2 forms the negative terminal of the output circuit 4. The anode of the voltage regulator tube R5 is connected with the cathode end of the photovoltaic diode array R4. The cathode of the voltage regulator tube R5 is connected with the anode end of the photovoltaic diode array R4.
The fourth circuit configuration is shown in fig. 2 (d):
the input circuit 3 includes 2 light emitting diodes R2 and R3, and an anti-reverse diode R1. The light emitting diodes R2 and R3 are connected in parallel, the anode ends of the parallel connected light emitting diodes R2 and R3 form the anode of the input end of the input circuit 3, the cathode ends of the parallel connected light emitting diodes R1 are connected with the anode of the anti-reverse diode R1, and the cathode of the anti-reverse diode R1 forms the cathode of the input end of the input circuit 3.
The output circuit 4 includes a photovoltaic diode array R4, power field effect transistors Q1 and Q2, and a voltage regulator R5. The anode terminal of the photovoltaic diode array R4 is connected to the gates of the power field effect transistors Q1 and Q2 simultaneously. The cathode terminal of the photovoltaic diode array R4 is connected with the drains of the power field effect transistors Q1 and Q2 at the same time. The drain of the power fet Q1 forms the positive terminal of the output circuit 4, and the drain of the power fet Q2 forms the negative terminal of the output circuit 4. The anode of the voltage regulator tube R5 is connected with the cathode end of the photovoltaic diode array R4. The cathode of the voltage regulator tube R5 is connected with the anode end of the photovoltaic diode array R4.
In the input circuit 3: the light emitting diodes R2 and R3 are used to drive the photovoltaic diode array R4. The anti-reverse diode R1 can effectively prevent the optical isolation device from being damaged due to back voltage in application. In the output circuit 4: the photovoltaic diode array R4 is responsible for converting received light into electricity and providing electrical power for subsequent stages. The power field effect transistors Q1 and Q2 may be enhancement mode field effect transistors or depletion mode field effect transistors, and the power field effect transistors Q1 and Q2 are connected in reverse series to realize an output bidirectional mode. The voltage regulator tube R5 is used for enhancing the static electricity resistance and the anti-interference capability, thereby improving the stability of the circuit.
Each component of the input circuit 3 is adhered to the substrate 1 by conductive silver adhesive, and the electrical connection among the components is realized by gold wire ball bonding technology. Each component of the output circuit 4 is bonded on the base 2 by conductive silver adhesive, and the electrical connection among the components adopts gold wire ball bonding technology. When the input circuit 3 is assembled on the substrate 1 and the output circuit 4 is assembled on the base 2, the two are bonded by the conductive silver adhesive to realize direct connection.
The light emitting diodes R2 and R3 of the input circuit 3 are optically coupled with the photovoltaic diode array R4 of the output circuit 4 by direct illumination. In order to allow more light emitted by the leds R2 and R3 of the input circuit 3 to be received by the pv diode array R4 of the output circuit 4, the leds R2 and R3 are offset from each other on the surface of the substrate 1, i.e. the leds R2 and R3 are in the plane of the substrate 1, and their x-direction central axis and y-direction central axis do not coincide with each other.
In order to enable the input circuit 3 and the output circuit 4 to better realize optical coupling and reduce the height of the whole relay, positioning counterbores 5 of each component are formed in the substrate 1 and the base 2, fig. 3 is schematic diagrams of two three-dimensional structures of the substrate 1, and positioning counterbores 5 of light emitting diodes R2 and R3 and anti-reflection diodes R1 are respectively formed in the positioning counterbores 5, wherein fig. 3(a) is a schematic diagram of the positioning counterbores 5 when the light emitting diodes R2 and R3 are connected in parallel, and fig. 3(b) is a schematic diagram of the positioning counterbores 5 when the light emitting diodes R2 and R3 are connected in series. Fig. 4 is a schematic perspective view of the base 2, on which a positioning counterbore 5 of a photovoltaic diode array R4, power field effect transistors Q1 and Q2, and a voltage regulator tube R5 are respectively disposed.
It should be noted that, although the above-mentioned embodiments of the present invention are illustrative, the present invention is not limited thereto, and thus the present invention is not limited to the above-mentioned embodiments. Other embodiments, which can be made by those skilled in the art in light of the teachings of the present invention, are considered to be within the scope of the present invention without departing from its principles.
Claims (5)
1. The quick switch optical isolation solid relay comprises an input circuit (3) arranged on a substrate (1) and an output circuit (4) arranged on a base (2); it is characterized in that the utility model is characterized in that,
the input circuit (3) comprises 2 light emitting diodes R2 and R3; the light-emitting diodes R2 and R3 are mutually connected in series or in parallel to form the input end of the input circuit (3);
the output circuit (4) comprises a photovoltaic diode array R4, power field effect transistors Q1 and Q2; one end of the photovoltaic diode array R4 is simultaneously connected with the sources of the power field effect transistors Q1 and Q2, the other end of the photovoltaic diode array R4 is simultaneously connected with the grids of the power field effect transistors Q1 and Q2, and the drains of the power field effect transistors Q1 and Q2 form the output end of the output circuit (4);
the input circuit (3) light emitting diodes R2 and R3 are coupled with the output circuit (4) photovoltaic diode array R4 through direct illumination.
2. The fast switching optically isolated solid state relay of claim 1, wherein the input circuit (3) further comprises an anti-flyback diode R1; the anode of the anti-reverse diode R1 is connected with the cathodes of the series or parallel light-emitting diodes R2 and R3, and the cathode of the anti-reverse diode R1 is connected with the cathode of the input end of the input circuit (3).
3. The fast switching optically isolated solid state relay of claim 1, wherein the output circuit (4) further comprises a voltage regulator R5; two ends of the voltage-stabilizing tube R5 are connected in parallel with two ends of the photovoltaic diode array R4.
4. The fast switching optically isolated solid state relay of claim 1, wherein the light emitting diodes R2 and R3 are offset from each other on the surface of the substrate (1).
5. The fast switch optical isolation solid relay as claimed in claim 1, wherein the substrate (1) and the base (2) are both provided with positioning counter bores (5) for each component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911057832.6A CN110661514A (en) | 2019-11-01 | 2019-11-01 | Quick switch optical isolation solid relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911057832.6A CN110661514A (en) | 2019-11-01 | 2019-11-01 | Quick switch optical isolation solid relay |
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| Publication Number | Publication Date |
|---|---|
| CN110661514A true CN110661514A (en) | 2020-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911057832.6A Pending CN110661514A (en) | 2019-11-01 | 2019-11-01 | Quick switch optical isolation solid relay |
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| Country | Link |
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| CN (1) | CN110661514A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111431519A (en) * | 2020-04-17 | 2020-07-17 | 贵州振华群英电器有限公司（国营第八九一厂） | Small-packaged high-power solid relay |
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|---|---|---|---|---|
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| CN206332659U (en) * | 2016-12-20 | 2017-07-14 | 贵州振华群英电器有限公司（国营第八九一厂） | A kind of high pressure solid relay |
| CN209046614U (en) * | 2018-12-06 | 2019-06-28 | 陕西群力电工有限责任公司 | A kind of narrow lead spacing light MOS solid-state relay of 1.27mm |
| CN210490821U (en) * | 2019-11-01 | 2020-05-08 | 桂林航天电子有限公司 | Quick switch optical isolation solid relay |
-
2019
- 2019-11-01 CN CN201911057832.6A patent/CN110661514A/en active Pending
Patent Citations (13)
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|---|---|---|---|---|
| JPH0645357U (en) * | 1992-11-24 | 1994-06-14 | 煥林 劉 | Photoelectrically isolated solid state relay |
| CN2228692Y (en) * | 1995-04-26 | 1996-06-05 | 电子工业部第二十四研究所 | Photovoltaic type solid state relay |
| JP2005005833A (en) * | 2003-06-10 | 2005-01-06 | Omron Corp | Mosfet solid-state relay |
| JP2007135081A (en) * | 2005-11-11 | 2007-05-31 | Matsushita Electric Works Ltd | Semiconductor relay device |
| CN2882122Y (en) * | 2006-01-18 | 2007-03-21 | 北京市科通电子继电器总厂 | Ceramic packed optical-MOS solid relay |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111431519A (en) * | 2020-04-17 | 2020-07-17 | 贵州振华群英电器有限公司（国营第八九一厂） | Small-packaged high-power solid relay |
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