CN110660708A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN110660708A
CN110660708A CN201910579451.8A CN201910579451A CN110660708A CN 110660708 A CN110660708 A CN 110660708A CN 201910579451 A CN201910579451 A CN 201910579451A CN 110660708 A CN110660708 A CN 110660708A
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concentration
liquid
meter
component
phosphoric acid
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CN110660708B (en
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吉田博司
佐藤秀明
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D27/00—Simultaneous control of variables covered by two or more of main groups G05D1/00 - G05D25/00
    • G05D27/02—Simultaneous control of variables covered by two or more of main groups G05D1/00 - G05D25/00 characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention provides a substrate processing apparatus and a substrate processing method, which can change the component concentration of a processing liquid for processing a substrate by immersing the substrate in the processing liquid with high precision. The substrate processing apparatus includes: a processing tank for storing a processing liquid containing a first component and a second component having a boiling point higher than that of the first component, and processing a substrate by immersing the substrate in the processing liquid; a control liquid supply unit configured to supply a control liquid containing the first component and used for controlling a concentration of the second component in the treatment liquid to the treatment tank; and a control unit that controls the adjustment liquid supply unit, wherein when the concentration is changed, the control unit calculates a liquid surface height in the processing tank corresponding to the concentration after the change based on a difference between the concentration after the change and the concentration before the change, and controls supply of the adjustment liquid to the processing tank based on the liquid surface height obtained by the calculation.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present disclosure relates to a substrate processing apparatus and a substrate processing method.
Background
The etching apparatus described in patent document 1 performs an etching process on a substrate using a phosphoric acid aqueous solution having a predetermined concentration. The etching treatment apparatus includes a treatment liquid storage section for storing a phosphoric acid aqueous solution, a water supply section for supplying water to the treatment liquid storage section, and a treatment liquid circulation section for circulating the phosphoric acid aqueous solution stored in the treatment liquid storage section. The treatment liquid circulating section includes a concentration sensor for detecting the concentration of the phosphoric acid aqueous solution. The etching apparatus supplies pure water of an amount corresponding to the amount of water evaporated by heating to the treatment liquid storage section through the water supply section. Thus, the etching apparatus stores a phosphoric acid aqueous solution having a predetermined concentration in a treatment tank of the treatment solution storage section, and immerses the substrate in the phosphoric acid aqueous solution, thereby performing etching treatment on the substrate.
Patent document 1: japanese patent No. 6118739
Disclosure of Invention
Problems to be solved by the invention
One embodiment of the present disclosure provides a technique capable of accurately changing the component concentration of a processing liquid in which a substrate is immersed and processed.
Means for solving the problems
A substrate processing apparatus according to an aspect of the present disclosure includes: a processing tank for storing a processing liquid containing a first component and a second component having a boiling point higher than that of the first component, and processing a substrate by immersing the substrate in the processing liquid; a control liquid supply unit configured to supply a control liquid containing the first component and used for controlling a concentration of the second component in the treatment liquid to the treatment tank; and a control unit that controls the adjustment liquid supply unit, wherein when the concentration is changed, the control unit calculates a liquid surface height in the processing tank corresponding to the concentration after the change based on a difference between the concentration after the change and the concentration before the change, and controls supply of the adjustment liquid to the processing tank based on the liquid surface height obtained by the calculation.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one embodiment of the present disclosure, the concentration of the component of the processing liquid in which the substrate is immersed and processed can be changed with high accuracy.
Drawings
Fig. 1 is a diagram illustrating a substrate processing apparatus according to an embodiment.
Fig. 2 is a diagram showing a processing bath, a substrate holding section, and a moving mechanism section according to an embodiment.
Fig. 3 is a view showing an inner tank and a substrate holding portion of a processing tank according to an embodiment.
Fig. 4 is a flowchart showing a process of maintaining the concentration of phosphoric acid in the phosphoric acid aqueous solution according to the embodiment.
Fig. 5 is a diagram showing a relationship among the amount of phosphoric acid aqueous solution held, the amount of water evaporated, and the amount of water supplied when the concentration of phosphoric acid in the phosphoric acid aqueous solution is maintained according to one embodiment.
Fig. 6 is a flowchart showing a process of changing the phosphoric acid concentration according to an embodiment.
Fig. 7 is a graph showing the change with time in the liquid level height of the phosphoric acid aqueous solution in the outer tank and the change with time in the amount of water supplied from the adjustment liquid supply unit when the phosphoric acid concentration is gradually decreased according to the embodiment.
Fig. 8 is a graph showing the change with time in the liquid level height of the phosphoric acid aqueous solution in the outer tank and the change with time in the amount of water supplied from the adjustment liquid supply unit when the phosphoric acid concentration is gradually increased according to the embodiment.
Fig. 9 is a flowchart showing a process when a concentration meter according to an embodiment fails.
Detailed Description
Embodiments of the present disclosure are described below with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same or corresponding reference numerals, and the description thereof may be omitted. In the following description, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other, the X-axis direction and the Y-axis direction are horizontal, and the Z-axis direction is vertical. In the present specification, the lower side means the lower side in the vertical direction, and the upper side means the upper side in the vertical direction.
Fig. 1 is a diagram illustrating a substrate processing apparatus according to an embodiment. Fig. 2 is a diagram showing a processing bath, a substrate holding section, and a moving mechanism section according to an embodiment. Fig. 3 is a view showing an inner tank and a substrate holding portion of a processing tank according to an embodiment.
The substrate processing apparatus 10 processes the substrate 2 by immersing the substrate 2 in the processing liquid 3. The substrate 2 includes, for example, a silicon wafer, a silicon oxide film, and a silicon nitride film. The treatment liquid 3 is, for example, a phosphoric acid aqueous solution, which is an etching liquid for selectively removing a silicon nitride film out of a silicon oxide film and a silicon nitride film. The substrate processing apparatus 10 can simultaneously process a plurality of substrates 2. The substrate processing apparatus 10 includes, for example, a processing bath 20, a processing liquid circulating unit 30, a raw material liquid supplying unit 50, an adjusting liquid supplying unit 60, a substrate holding unit 70, a moving mechanism 75, and a control unit 90.
The processing bath 20 is used for storing the processing liquid 3 and immersing the substrate 2 in the processing liquid 3 to process the substrate 2. The treatment liquid 3 contains, for example, a first component and a second component having a boiling point higher than that of the first component. When the treatment liquid 3 is an aqueous phosphoric acid solution, the first component is water and the second component is phosphoric acid.
The processing tank 20 is, for example, a double tank, and has an inner tank 21 for storing the processing liquid 3 and an outer tank 22 for collecting the processing liquid 3 overflowing from the inner tank 21. The substrate 2 is immersed in the processing liquid 3 stored in the inner tank 21, and the substrate 2 is processed by the processing liquid 3.
The treatment liquid circulation unit 30 has a circulation pipe 31 for conveying the treatment liquid 3 from the outer tank 22 to the inner tank 21. A circulation pump 32 for sending out the treatment liquid 3, a temperature regulator 33 for regulating the temperature of the treatment liquid 3, a circulation filter 34 for collecting fine particles contained in the treatment liquid 3, and the like are provided in the middle of the circulation pipe 31.
The temperature controller 33 includes a heater that heats the treatment liquid 3. The temperature controller 33 heats the treatment liquid 3 under the control of the control unit 90 so that the temperature measured by the temperature measuring device 11 reaches the set temperature. The temperature measuring device 11 measures the temperature of the processing liquid 3 stored in the inner tank 21. The temperature measuring device 11 is constituted by a thermocouple, for example. When the treatment liquid 3 is an aqueous phosphoric acid solution, the set temperature of the treatment liquid 3 is set to, for example, the boiling point of the aqueous phosphoric acid solution. The temperature controller 33 may further include a cooler for cooling the treatment liquid 3.
The treatment liquid circulation unit 30 has a supply pipe 35 connected to the circulation pipe 31. The supply pipe 35 is used to supply the processing liquid 3 supplied from the circulation pipe 31 to the inside of the inner tank 21. For example, as shown in fig. 3, the supply pipes 35 are provided at intervals in the Y-axis direction. As shown in fig. 2, for example, each supply pipe 35 has a horizontal portion 36 provided horizontally inside the inner tank 21.
The horizontal portion 36 is disposed below the substrate holding portion 70, and as shown in fig. 3, is provided so as to overlap the substrate holding portion 70 when viewed in the vertical direction. The horizontal portion 36 extends in the X-axis direction, and has a plurality of discharge ports 37 spaced apart in the longitudinal direction thereof. The plurality of discharge ports 37 are provided so as not to overlap the substrate holding portion 70 when viewed in the Z-axis direction.
The plurality of discharge ports 37 discharge the treatment liquid 3 directly upward. Thereby, a curtain-like upward flow is formed inside the inner tank 21. Since the laminar flow is formed inside the inner tank 21, the substrate 2 held by the substrate holding portion 70 can be uniformly processed. In order to more uniformly process the substrate 2, the horizontal portion 36 is disposed so as to be spaced upward from the bottom wall of the inner groove 21 so that the substrate 2 and the horizontal portion 36 are as close as possible.
As shown in fig. 1, the treatment liquid circulation unit 30 has a concentration meter side pipe 38 connected to the circulation pipe 31. The concentration meter-side pipe 38 is used to supply the treatment liquid 3 fed from the circulation pipe 31 to the inside of the outer tank 22. A concentration meter 39 is provided in the middle of the concentration meter side pipe 38.
The concentration meter 39 measures the concentration of the second component in the treatment liquid 3. The concentration of the second component is, for example, the concentration of phosphoric acid. The concentration meter 39 includes a refractometer 40, and the refractometer 40 detects a refractive index as an index of the concentration of the second component. The relationship between the concentration of the second component and the refractive index is obtained in advance through experiments or the like, and is stored in advance in the storage medium 92 of the control unit 90. The concentration of the second component is measured from the refractive index detected by the refractometer 40 and the relationship between the concentration of the second component and the refractive index stored in advance.
In addition, in the case where the processing liquid 3 is composed of two components, measuring the concentration of the second component in the processing liquid 3 corresponds to measuring the concentration of the first component in the processing liquid 3.
A first on-off valve 41 and a second on-off valve 42 are provided on the middle of the concentration meter side pipe 38 with the concentration meter 39 interposed therebetween. While the concentration meter 39 measures the concentration of the second component, the first opening/closing valve 41 and the second opening/closing valve 42 open the flow path of the treatment liquid 3. The treatment liquid 3 passes through the concentration meter side pipe 38, and the concentration meter 39 measures the concentration of the second component in the middle of the concentration meter side pipe 38. On the other hand, while the concentration meter 39 is not measuring the concentration of the second component, the first on-off valve 41 and the second on-off valve 42 close the flow path of the treatment liquid 3.
In addition to the concentration meter 39, a concentration meter 45 may be provided. The concentration meter 45 includes a hydraulic pressure meter 46, and the hydraulic pressure meter 46 detects a hydraulic pressure as an index of the concentration of the second component. As the liquid pressure gauge 46, for example, a bubble type liquid level gauge is used. Normally, a bubble type liquid level gauge is used for measuring the displacement of the liquid level height, but in the present embodiment, a bubble type liquid level gauge is used for measuring the concentration of the second component, and the bubble type liquid level gauge is provided at a position where the liquid level height is fixed (specifically, the inner tank 21).
The hydraulic gauge 46 has a bubble vial 47, a purge gas supply unit 48, and a detector 49. The bubble vial 47 is disposed vertically inside the inner tank 21, and a discharge port for discharging bubbles of the purge gas is provided at a lower end portion of the bubble vial 47. The purge gas supply unit 48 supplies purge gas to the bubble vial 47 so that the purge gas is discharged from the discharge port of the bubble vial 47 at a constant flow rate. The purge gas is an inert gas such as nitrogen. The detector 49 detects the back pressure of the purge gas corresponding to the hydraulic pressure applied to the discharge port of the bubble vial 47.
Since the processing liquid 3 overflows from the inner tank 21 to the outer tank 22, the liquid level of the processing liquid 3 in the inner tank 21 is constant. Since the liquid level height of the treatment liquid 3 is fixed, the greater the density of the treatment liquid 3, the greater the liquid pressure applied to the discharge port of the bubble vial 47. In addition, the density of the treatment liquid 3 varies depending on the concentration of the second component. When the density of the second component is higher than that of the first component, the density of the treatment liquid 3 increases as the concentration of the second component increases. On the other hand, when the density of the second component is smaller than that of the first component, the density of the treatment liquid 3 increases as the concentration of the second component decreases. The relationship between the concentration of the second component and the hydraulic pressure is obtained in advance through experiments or the like, and is stored in advance in the storage medium 92 of the control unit 90. The concentration of the second component is measured based on the hydraulic pressure detected by the hydraulic pressure meter 46 and the relationship between the concentration of the second component and the hydraulic pressure stored in advance.
The source liquid supply unit 50 supplies a source liquid to the processing bath 20. The raw material liquid contains a first component and a second component mixed at a predetermined mixing ratio. The raw material liquid is, for example, an aqueous phosphoric acid solution. The concentration of the second component in the raw material liquid is set based on the concentration of the second component in the treatment liquid 3. For example, the concentration of the second component in the raw material liquid is set to be the same as the concentration of the second component in the treatment liquid 3.
The raw material liquid supply unit 50 includes, for example, a nozzle 51 for supplying the raw material liquid to the processing bath 20. The nozzle 51 is connected to a supply source 54 via an on-off valve 52 and a flow rate adjustment valve 53. When the flow path of the raw material liquid is opened by the opening/closing valve 52, the raw material liquid is supplied from the nozzle 51 to the outer tank 22. On the other hand, when the flow path of the raw material liquid is closed by the opening/closing valve 52, the supply of the raw material liquid from the nozzle 51 to the outer tank 22 is stopped. The flow rate adjustment valve 53 is used to adjust the flow rate of the raw material liquid from the nozzle 5. The supply source 54 supplies the nozzle 51 with the raw material liquid.
The control liquid supply unit 60 supplies the control liquid to the processing bath 20. The adjustment liquid contains a first component for adjusting the concentration of a second component in the treatment liquid 3. The concentration of the second component in the conditioning liquid is set to be lower than the concentration of the second component in the treatment liquid 3. The conditioning liquid contains, for example, only the first component. The conditioning liquid is, for example, Water such as DIW (Deionized Water). The first component has a boiling point lower than that of the second component and is easily evaporated. The control liquid supply unit 60 supplies the control liquid to the processing bath 20 at the same rate as the evaporation rate of the first component from the processing liquid 3, thereby maintaining the concentration of the second component in the processing liquid 3.
The control liquid supply unit 60 can also supply the control liquid to the processing bath 20 at a rate higher than the evaporation rate of the first component from the processing liquid 3, thereby reducing the concentration of the second component in the processing liquid 3. The control liquid supply unit 60 may supply the control liquid to the processing bath 20 at a rate lower than the evaporation rate of the first component from the processing liquid 3, thereby increasing the concentration of the second component in the processing liquid 3.
The control liquid supply unit 60 has a nozzle 61 for supplying the control liquid to the processing bath 20. The nozzle 61 is connected to a supply source 64 via an opening/closing valve 62 and a flow rate adjustment valve 63. When the flow path of the adjustment liquid is opened by the opening/closing valve 62, the adjustment liquid is supplied from the nozzle 61 to the outer tank 22. On the other hand, when the flow path of the control liquid is closed by the opening/closing valve 62, the supply of the control liquid from the nozzle 61 to the outer tank 22 is stopped. The flow rate regulating valve 63 regulates the flow rate of the control liquid from the nozzle 61. The supply source 64 supplies the nozzle 61 with the control liquid.
The position of the adjustment liquid supplied from the adjustment liquid supply unit 60 is not limited to the outer tank 22. For example, the position at which the adjustment liquid is supplied from the adjustment liquid supply unit 60 may be midway in the circulation pipe 31. If the conditioning liquid is mixed with the treatment liquid 3, the concentration of the second component in the treatment liquid 3 can be adjusted.
The substrate holding portion 70 holds the substrate 2. The substrate holding portion 70 can hold a plurality of substrates 2 at the same time. As shown in fig. 3, for example, the substrate holding portion 70 includes a plurality of substrate holding bars 72 provided at intervals in the Y-axis direction. A plurality of grooves are formed in each substrate holding bar 72 at intervals in the X-axis direction, and the substrate 2 is inserted into each groove. Thus, the substrate holding portion 70 holds the plurality of substrates 2 at intervals in the array direction (X-axis direction in the present embodiment) of the ejection ports 37.
The moving mechanism 75 (see fig. 2) moves the substrate holder 70 relative to the inner tank 21. The moving mechanism 75 includes, for example, a guide 76 fixed to the inner groove 21 and a slider 77 moving along the guide 76. The substrate holding portion 70 is fixed to the slider 77, and the substrate holding portion 70 moves together with the slider 77. As a drive source for driving the slider 77, for example, an electric motor is used, and a rotational motion of the electric motor is converted into a linear motion of the slider 77 by a motion conversion mechanism such as a ball screw.
The moving mechanism 75 moves the substrate holding portion 70 between a processing position indicated by a solid line in fig. 2 and a standby position indicated by a two-dot chain line in fig. 2. The standby position is set above the processing position. When the substrate holding portion 70 is positioned at the processing position, the entire substrate 2 of the plurality of substrates 2 held by the substrate holding portion 70 is immersed in the processing liquid 3. On the other hand, when the substrate holding portion 70 is located at the standby position, the entire substrate 2 of the plurality of substrates 2 held by the substrate holding portion 70 is exposed to the outside air. The substrate holding unit 70 receives the substrate 2 before processing from the external transport apparatus at the standby position, then descends to the processing position, ascends again to the standby position after a predetermined time has elapsed, and delivers the processed substrate 2 to the external transport apparatus at the standby position. Thereafter, the same action is repeated.
The control Unit 90 (see fig. 1) is configured by, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. A program for controlling various processes executed in the substrate processing apparatus 10 is stored in the storage medium 92. The control unit 90 controls the operation of the substrate processing apparatus 10 by causing the CPU 91 to execute the program stored in the storage medium 92. The control unit 90 includes an input interface (input I/F)93 and an output interface (output I/F) 94. The control unit 90 receives a signal from the outside through the input interface 93 and transmits a signal to the outside through the output interface 94.
The program may be stored in a computer-readable storage medium and installed from the storage medium to the storage medium 92 of the control unit 90. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card. The program may be downloaded from a server via the internet and installed in the storage medium 92 of the control unit 90.
Next, a substrate processing method using the substrate processing apparatus 10 will be described. In the following description, since the treatment liquid 3 is a phosphoric acid aqueous solution, the first component is water and the second component is phosphoric acid. In the following description, the conditioning liquid is water such as DIW, and therefore contains only water as the first component and does not contain phosphoric acid as the second component.
Fig. 4 is a flowchart showing a process of maintaining the concentration of phosphoric acid in the phosphoric acid aqueous solution according to the embodiment. The processing shown in fig. 4 is repeated at predetermined time intervals under the control of the control unit 90.
First, the control section 90 performs a step S101 of determining whether or not a density maintenance instruction is received. The concentration maintenance instruction is an instruction to maintain the concentration of the second component in the treatment liquid 3 at a predetermined set value. For example, the concentration maintenance instruction is an instruction to maintain the concentration C of phosphoric acid in the phosphoric acid aqueous solution at a predetermined set value. The concentration maintenance indication is generated, for example, by an external controller.
The density maintenance instruction is set to be valid until the density change instruction is received. The concentration change instruction is an instruction to change the concentration of the second component in the treatment liquid 3. For example, the instruction to change the concentration is an instruction to change the concentration C of phosphoric acid in the phosphoric acid aqueous solution. The density change instruction is generated by, for example, an external controller.
The external controller sends a density maintenance instruction and a density change instruction to the control unit 90 at different timings. The timing at which the external controller sends the concentration change instruction to the control unit 90 may be in the process of immersing the substrate 2 in the processing liquid 3 to process the substrate 2, or may be after the process of lifting the substrate 2 from the processing liquid 3 and before the process of immersing another substrate 2 in the processing liquid 3.
When the control unit 90 does not receive the instruction to maintain the concentration (S101: no), the process of maintaining the concentration C of phosphoric acid in the phosphoric acid aqueous solution is not performed, and the process of this time is terminated. Hereinafter, the concentration C of phosphoric acid in the phosphoric acid aqueous solution is also referred to simply as the phosphoric acid concentration C.
On the other hand, when the control unit 90 receives the instruction to maintain the concentration (S101: "YES"), the control unit performs a step S102 of measuring the phosphoric acid concentration C by the concentration meter 39 to perform a process of maintaining the phosphoric acid concentration C.
The concentration meter 39 has a refractometer 40. Instead of the concentration meter 39, a concentration meter 45 may be used. The concentration meter 45 has a hydraulic pressure meter 46. The phosphoric acid concentration C may be measured by two concentration meters 39 and 45.
Next, the control unit 90 performs a step S103 of supplying water as the control liquid from the control liquid supply unit 60 to the outer tank 22 based on a deviation between the set value of the phosphoric acid concentration C and the measured value of the phosphoric acid concentration C. The set value of the phosphoric acid concentration C is determined in accordance with the concentration maintenance instruction. On the other hand, the measured value of the phosphoric acid concentration C is measured in step S102.
For example, the control unit 90 performs feedback control of the water supply amount so that the deviation between the set value of the phosphoric acid concentration C and the measured value of the phosphoric acid concentration C becomes zero. As the feedback Control, for example, PI Control (Proportional Integral Control) or PID Control (Proportional Integral derivative Control) is used.
After step S103 of supplying water as the control liquid, the control unit 90 ends the present process.
Fig. 5 is a diagram showing a relationship among the amount of phosphoric acid aqueous solution held, the amount of water evaporated, and the amount of water supplied when the concentration of phosphoric acid in the phosphoric acid aqueous solution is maintained according to one embodiment. The amount V of the phosphoric acid aqueous solution is the volume of the phosphoric acid aqueous solution held in the treatment tank 20 and the treatment liquid circulation unit 30.
The volume V1 (not shown) of the phosphoric acid aqueous solution held in the inner tank 21 of the processing tank 20 is constant and is stored in the storage medium 92 of the control unit 90 in advance. The volume V3 (not shown) of the phosphoric acid aqueous solution held by the treatment liquid circulation unit 30 is constant and is stored in advance in the storage medium 92 of the control unit 90.
On the other hand, the volume V2 (not shown) of the phosphoric acid aqueous solution held in the outer tank 22 in the treatment tank 20 varies depending on the liquid level H (see fig. 1) of the phosphoric acid aqueous solution in the outer tank 22. The liquid level height H is measured by the level gauge 12. The level gauge 12 may be a conventional level gauge.
The relationship between the liquid surface height H and the volume V2 is obtained in advance through experiments or the like, and is stored in advance in the storage medium 92 of the control unit 90. The control section 90 calculates the volume V2 based on the measured value of the liquid level H and the relationship between the liquid level H and the volume V2 stored in advance.
The controller 90 determines the sum (V1+ V2+ V3) of the volume V2 calculated from the liquid level height H and the volumes V1 and V3 stored in the storage medium 92 as the amount V of phosphoric acid aqueous solution retained. The phosphoric acid aqueous solution is composed of phosphoric acid and water, and therefore, as shown in FIG. 5, the retained amount V of the phosphoric acid aqueous solution is equal to the retained amount V of phosphoric acidPRetention V with waterWThe sum (V)P+VW)。
The control section 90 calculates the retained amount V of phosphoric acid based on the retained amount V of the phosphoric acid aqueous solution and the measured values of the phosphoric acid concentration CP. The control unit 90 calculates the water retention amount V based on the measured values of the phosphoric acid aqueous solution retention amount V and the phosphoric acid concentration CW. Here, the phosphoric acid concentration C is measured by the concentration meter 39 or the concentration meter 45.
The control section 90 calculates the amount V of phosphoric acid retainedPOr the retention volume V of waterWIn the process (2), the unit of the phosphoric acid concentration C is converted from mass% to volume%. In this conversion, the density of water and the density of phosphoric acid are used. The density of water and the density of phosphoric acid are stored in advance in the storage medium 92 of the control unit 90, and V is calculatedPOr VWIs read out for use.
During the treatment for maintaining the phosphoric acid concentration C, phosphoric acid is not supplied from the raw material liquid supply unit 50 and the adjustment liquid supply unit 60 to the treatment tank 20. Further, since phosphoric acid has a boiling point higher than that of water, it does not disappear from the treatment tank 20 by evaporation. Thus, the amount V of phosphoric acid retained during the treatment for maintaining the phosphoric acid concentration CPIs stationary.
On the other hand, during the treatment for maintaining the phosphoric acid concentration C, water is evaporated and disappears from the treatment tank 20, and water is supplied from the adjustment liquid supply unit 60 to the treatment tank 20. The controller 90 supplies water to the treatment tank 20 at the same rate as the evaporation rate of water, thereby maintaining the phosphoric acid concentration C. When the amount of water evaporated per unit time is the same as the amount of water supplied per unit time, the phosphoric acid concentration C is maintained constant.
During the treatment for maintaining the phosphoric acid concentration C, the amount of water evaporated per unit time is the same as the amount of water supplied per unit time. Therefore, during the treatment for maintaining the phosphoric acid concentration C, the holding amount V of the phosphoric acid aqueous solution is fixed, and therefore the liquid surface height H is also fixed.
Therefore, when the concentration meter 39 is used for controlling the phosphoric acid concentration C, the control unit 90 may determine whether or not the concentration meter 39 is defective based on the measurement value of the liquid level meter 12. If there is no abnormality in the measured value of the concentration meter 39, the liquid level height H converges within a predetermined range.
For example, the control portion 90 determines that the concentration meter 39 has a failure when the measurement value of the level gauge 12 is lower than the first threshold value HT1 or the measurement value of the level gauge 12 exceeds the second threshold value HT2(HT2> HT 1). When the measurement value of the liquid level gauge 12 is equal to or greater than the first threshold value HT1 and equal to or less than the second threshold value, the control unit 90 determines that the concentration meter 39 is not defective.
The first threshold HT1 and the second threshold HT2 may vary according to the phosphoric acid concentration C, respectively. The smaller the phosphoric acid concentration C, the larger the first threshold HT1 and the second threshold HT 2. The relationship between the respective thresholds of the first threshold HT1 and the second threshold HT2 and the phosphoric acid concentration C is determined in advance by experiments or the like, and is stored in advance in the storage medium 92 of the control unit 90.
As described above, the concentration meter 45 may be used for controlling the phosphoric acid concentration C, and the measurement value of the liquid level meter 12 may be used for determining a failure of the concentration meter 45.
The controller 90 may also reduce the phosphoric acid concentration C of the phosphoric acid aqueous solution by supplying water to the treatment tank 20 at a rate greater than the evaporation rate of water. The controller 90 may increase the phosphoric acid concentration C of the phosphoric acid aqueous solution by supplying water to the treatment tank 20 at a rate lower than the evaporation rate of water.
When the conditioning liquid supply unit 60 supplies water to the treatment tank 20, it takes a certain time until the supplied water is uniformly mixed with the phosphoric acid by being diffused. Therefore, if the control unit 90 controls the supply amount of water supplied from the adjustment liquid supply unit 60 to change the phosphoric acid concentration C while monitoring the phosphoric acid concentration C using the concentration meters 39 and 45, the supply amount of water may be too large or too small. Therefore, it takes a certain time to stabilize the phosphoric acid concentration C to the changed concentration.
Therefore, when the control unit 90 receives an instruction to change the phosphoric acid concentration C, the liquid level height HA corresponding to the phosphoric acid concentration CA after the change is calculated based on the concentration difference Δ C (Δ C — CA CB) between the phosphoric acid concentration CA after the change and the phosphoric acid concentration CB before the change. The controller 90 controls the amount of water supplied from the adjustment liquid supply unit 60 based on the calculated liquid surface height HA.
The liquid surface height HA corresponding to the changed phosphoric acid concentration CA is the same before and after the water is diffused and uniformly mixed with the phosphoric acid. Therefore, by controlling the water supply amount based on the liquid surface height HA, the phosphoric acid concentration C can be accurately changed from CB to CA, and the time required to stabilize the phosphoric acid concentration C to CA can be shortened.
Fig. 6 is a flowchart showing a process of changing the phosphoric acid concentration according to an embodiment. For example, the processing shown in fig. 6 is performed from time t1 to time t2 shown in fig. 7. The processing shown in fig. 6 is performed from time t1 to time t2 shown in fig. 8. Fig. 7 is a graph showing the change with time in the liquid level height of the phosphoric acid aqueous solution in the outer tank and the change with time in the amount of water supplied from the adjustment liquid supply unit when the phosphoric acid concentration is gradually decreased according to the embodiment. Fig. 8 is a graph showing the change with time in the liquid level height of the phosphoric acid aqueous solution in the outer tank and the change with time in the amount of water supplied from the adjustment liquid supply unit when the phosphoric acid concentration is gradually increased according to the embodiment.
First, the control unit 90 executes step S201, and in step S201, determines whether or not a density change instruction has been received. The concentration change means is, for example, an instruction to change the phosphoric acid concentration C.
When the instruction to change the concentration is not received (no in S201), the control unit 90 does not perform the process of changing the phosphoric acid concentration, and thus ends the present process.
On the other hand, when the concentration change instruction is received (yes in S201), the control unit 90 performs a step S202 of calculating a concentration difference Δ C (Δ C ═ CA-CB) between the phosphoric acid concentration CA after the concentration change and the phosphoric acid concentration CB before the concentration change.
Here, in the process of changing the phosphoric acid concentration C from CB to CA, phosphoric acid does not evaporate and disappear from the processing bath 20, and phosphoric acid is not supplied from the raw material liquid supply unit 50 and the adjustment liquid supply unit 60 to the processing bath 20. Thus, in the treatment of changing the phosphoric acid concentration C from CB to CA, the phosphoric acid holding amount VPIs stationary.
Due to the phosphoric acid holding amount VPIs fixed, so that the water retention amount VWAnd the phosphoric acid concentration C is in the range of 1: 1 corresponds to. That is, if the water retention amount V is determinedWThe phosphoric acid concentration C is determined, and the water retention amount V is determined when the phosphoric acid concentration C is determinedW. Water retention VWThe more, the smaller the phosphoric acid concentration C.
Therefore, the control unit 90 executes step S203, and in this step S203, calculates the water retention amount V corresponding to the concentration difference Δ C calculated in step S202WChange amount of (Δ V)W(ΔVW＝VAW-VBW)。VAWIs a water retention amount V corresponding to the changed phosphoric acid concentration CAW，VBWThe water retention amount V corresponding to the phosphoric acid concentration CB before the changeW。
In calculating Δ V corresponding to Δ CWIn the process (2), the control unit 90 converts the unit of the phosphoric acid concentration C from mass% to volume%. In this conversion, the density of water and the density of phosphoric acid are used. The density of water and the density of phosphoric acid are stored in advance in the storage medium 92 of the control unit 90, and Δ V is calculatedWIs read out for use.
Then, the control section 90 performs the calculation and the calculated water retention amount VWChange amount of (Δ V)WEquivalent change in the liquid level H in the outer tank 22And a step S204 for determining the amount Δ H (Δ H ═ HA-HB). HA is the liquid level height H corresponding to the phosphoric acid concentration CA after the change, and HB is the liquid level height H corresponding to the phosphoric acid concentration CB before the change. The control part 90 is based on the water retention amount VWChange amount of (Δ V)WAnd the area S of the liquid surface to calculate the variation DeltaH of the liquid surface height H (DeltaH ═ DeltaV)W/S)。
Next, the control unit 90 executes step S205, and in step S205, calculates the liquid level height HA corresponding to the phosphoric acid concentration CA after the change (HA ═ Δ H + HB) based on the change amount Δ H of the liquid level height H calculated in step S204 and the liquid level height HB corresponding to the phosphoric acid concentration CB before the change. Here, the liquid level height HB corresponding to the phosphoric acid concentration CB before the change uses the measurement value measured by the liquid level gauge 12 when the phosphoric acid concentration C is CB.
Next, the control unit 90 executes step S206 of setting the temporal change in the liquid level H. For example, as indicated by the solid line in fig. 7 and 8, the control unit 90 continuously changes the setting of the liquid level height H from HB to HA in order to continuously change the setting of the phosphoric acid concentration C from CB to CA. Alternatively, as indicated by the one-dot chain lines in fig. 7 and 8, the control unit 90 changes the setting of the liquid level height H from HB to HA in order to change the setting of the phosphoric acid concentration C from CB to CA in a stepwise manner.
Next, the control unit 90 performs step S207 of measuring the liquid surface height by the liquid surface level gauge 12, and then performs step S208 of determining whether or not the liquid surface height H measured in step S207 is HA.
When the liquid level height H measured in step S207 is not HA (S208: NO), the phosphoric acid concentration C is not CA. Therefore, the control unit 90 performs step S209 of supplying water based on the deviation between the set value of the liquid surface height H set in step S206 and the measured value of the liquid surface height H measured in step S207.
For example, the control unit 90 performs feedback control of the water supply amount so that the deviation between the set value of the liquid surface height H and the measured value of the liquid surface height H becomes zero. As the feedback control, for example, PI control (Proportional Integral control) or PID control (Proportional Integral Differential) is used. Thereafter, the control unit 90 executes the process of step S207 and thereafter again.
On the other hand, when the liquid level height H measured in step S207 is HA (S208: YES), the phosphoric acid concentration C is CA. Therefore, the control unit 90 ends the current process. Thereafter, the controller 90 performs the processing shown in fig. 4 to maintain the phosphoric acid concentration C at the changed CA.
In addition, in order to simplify the calculation of the liquid level height HA, the control unit 90 of the present embodiment does not supply phosphoric acid from the raw material liquid supply unit 50 and the adjustment liquid supply unit 60 to the processing tank 20 in the process of changing the phosphoric acid concentration C from CB to CA, but the technique of the present disclosure is not limited thereto. In the process of changing the phosphoric acid concentration C from CB to CA, the control unit 90 may supply phosphoric acid to the processing bath 20 from the raw material liquid supply unit 50 or the adjustment liquid supply unit 60. The controller 90 can correct the liquid surface height HA corresponding to the changed phosphoric acid concentration CA based on the total amount of phosphoric acid supplied from time t1 to time t 2.
As described above, the control unit 90 controls the supply of water by the adjustment liquid supply unit 60 based on the liquid surface height HA calculated in step S205 and the measurement value of the liquid level meter 12 measured in step S207. Since the control unit 90 controls the supply of water by the adjustment liquid supply unit 60 while monitoring the measurement value of the liquid level meter 12, the liquid level height H can be accurately matched to HA. Since the control unit 90 monitors the measurement value of the liquid level gauge 12, it can cope with the fluctuation in the evaporation rate of water due to the change in the phosphoric acid concentration C.
The control unit 90 of the present embodiment controls the supply of water by the adjustment liquid supply unit 60 while monitoring the measurement value of the liquid level gauge 12, but the technique of the present disclosure is not limited to this. The control unit 90 may control the supply of water by the adjustment liquid supply unit 60 based on the liquid surface height HA calculated in step S205, or may not monitor the measurement value of the liquid level meter 12.
For example, the controller 90 may calculate the total supply amount (mL) of water from time t1 to time t2 based on the change amount Δ H calculated in step S204, and supply the calculated total supply amount of water from the adjustment liquid supply unit 60 to the treatment tank 20. Here, the total supply amount of water is calculated taking into account the total evaporation amount of water from time t1 to time t 2.
The total evaporation amount of water is obtained by integrating the evaporation rate of water over time. It can be assumed that the evaporation rate of water is fixed from the time t1 to the time t 2. For example, it is assumed that the evaporation rate of water is the same as the supply rate of water during the treatment of maintaining the phosphoric acid concentration C constant in the CB until time t 1.
In the process of changing the phosphoric acid concentration C, the control unit 90 of the present embodiment prohibits the supply of water from the adjustment liquid supply unit 60 based on the measurement value of the concentration meter 39, but the technique of the present disclosure is not limited to this. The control unit 90 may control the supply of water by the adjustment liquid supply unit 60 based on the liquid surface height HA calculated in step S205 and the measurement value of the concentration meter 39.
For example, the control unit 90 may control the supply of water by the adjustment liquid supply unit 60 based on the liquid surface height HA calculated in step S205 while monitoring the measurement value of the concentration meter 39. The result of the control of the supply of water based on the liquid level height HA calculated in step S205 can be evaluated.
In addition, in the control of the phosphoric acid concentration C, the concentration meter 39 used for the control of the phosphoric acid concentration C may sometimes fail. Therefore, the processing in the case where the concentration meter 39 has failed will be described below. The concentration meter 45 may be used for controlling the phosphoric acid concentration C. The process in the case where the concentration meter 45 has failed is the same as the process in the case where the concentration meter 39 has failed, and therefore, the description thereof is omitted.
Fig. 9 is a flowchart showing a process when a concentration meter according to an embodiment fails. The process shown in fig. 9 is repeated at predetermined time intervals under the control of the control unit 90, and the process shown in fig. 9 is performed in the process of maintaining the phosphoric acid concentration shown in fig. 4 and the process of changing the phosphoric acid concentration shown in fig. 6.
First, the control unit 90 performs a step S301 of determining whether or not a failure instruction of the concentration meter 39 is received. The failure of the concentration meter 39 means that it is considered that there is an abnormality in the signal indicating the measurement value of the concentration meter 39. For example, when the signal indicating the measurement value of the concentration meter 39 is interrupted for a predetermined time or more, a failure indication is generated. When the measured value of the concentration meter 39 is continuously lower than the first threshold CT1 for a predetermined time or more, a failure indication is generated. When the measurement value of the concentration meter 39 continuously exceeds the second threshold CT2 for a predetermined time or more (CT2> CT1), a failure indication is generated. The failure instruction is generated by, for example, an external controller, and the external controller transmits the failure instruction to the control unit 90.
When the failure instruction of the concentration meter 39 is not received (no in S301), the control unit 90 determines that the concentration meter 39 is not failed and ends the current process.
On the other hand, when receiving the failure instruction of the concentration meter 39 (S301: YES), the control unit 90 determines that the concentration meter 39 has failed and performs a step S302 of prohibiting the supply of water from the control liquid supply unit 60 based on the measurement value of the concentration meter 39.
Next, the control unit 90 performs a step S303 of measuring the liquid level height H by the liquid level gauge 12.
Next, the control unit 90 performs a step S304 of supplying water as the control liquid from the control liquid supply unit 60 to the outer tank 22 based on the deviation between the measured value of the liquid surface height H measured in the step S303 and the set value of the liquid surface height H, and ends the present process.
When a failure instruction is received from the concentration meter 39 during the process of maintaining the phosphoric acid concentration C, the control unit 90 uses the measured value of the liquid level height H immediately before the instruction is received as the set value of the liquid level height H in step S304.
On the other hand, when a failure instruction of the concentration meter 39 is received in the process of changing the phosphoric acid concentration C, the control unit 90 adopts the set value of the liquid level height H determined in step S206 shown in fig. 6 as the set value of the liquid level height H in step S304.
As described above, when the failure of the concentration meter 39 is detected, the control unit 90 prohibits the supply of water to the treatment tank 20 based on the measurement value of the concentration meter 39, and executes the supply of water to the treatment tank 20 based on the measurement value of the liquid level meter 12. This enables the phosphoric acid concentration C to be controlled with high accuracy when the concentration meter 39 fails.
Although the embodiments of the substrate processing apparatus and the substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments and the like. Various changes, modifications, substitutions, additions, deletions, and combinations may be made within the scope of the claims. These are of course also within the technical scope of the present disclosure.
The treatment tank 20 of the above embodiment is a double tank, but the technique of the present disclosure can also be applied to a single tank treatment tank. In the case where the treatment tank is a single tank, the liquid level gauge 12 measures the liquid level of the treatment liquid 3 stored in the single tank.
The treatment liquid 3 of the above embodiment is an aqueous phosphoric acid solution, the first component is water, and the second component is phosphoric acid, but the technique of the present disclosure can also be applied to treatment liquids other than an aqueous phosphoric acid solution. For example, the treatment liquid 3 may be ammonia water. In this case, the first component is ammonia and the second component is water.
When the treatment liquid 3 is an aqueous phosphoric acid solution, water as a first component is a solvent, and phosphoric acid as a second component is a solute. On the other hand, when the treatment liquid 3 is ammonia water, ammonia as a first component is a solute, and water as a second component is a solvent. Thus, it is sufficient which of the first component and the second component is the solute. In the case where the first component is a solute and the second component is a solvent, the concentration meters 39 and 45 may measure the concentration of the first component in the treatment liquid 3. The concentration meters 39 and 45 may measure the concentration of the solute.
The treatment liquid 3 of the above embodiment is composed of two components, but the treatment liquid of the present disclosure may be composed of three or more components. For example, the treatment liquid 3 may be SC-1 (a cleaning liquid containing ammonium hydroxide, hydrogen peroxide, and water).
The solvent of the treatment liquid 3 in the above embodiment is water, but the solvent of the treatment liquid 3 may be an organic solvent.
The substrate 2 of the above embodiment includes a silicon wafer, a silicon oxide film, and a silicon nitride film, but the structure of the substrate 2 is not particularly limited. For example, the substrate 2 may include a silicon carbide substrate, a sapphire substrate, a glass substrate, or the like instead of a silicon wafer.

Claims (12)

1. A substrate processing apparatus includes:
a processing tank for storing a processing liquid containing a first component and a second component having a boiling point higher than that of the first component, and processing a substrate by immersing the substrate in the processing liquid;
a control liquid supply unit configured to supply a control liquid containing the first component and used for controlling a concentration of the second component in the treatment liquid to the treatment tank; and
a control unit for controlling the adjustment liquid supply unit,
wherein, when the concentration is changed, the control unit calculates a liquid surface height in the processing tank corresponding to the concentration after the change based on a difference between the concentration after the change and the concentration before the change, and controls the supply of the adjustment liquid to the processing tank based on the liquid surface height obtained by the calculation.
2. The substrate processing apparatus according to claim 1,
a liquid level gauge for measuring the height of the liquid level is further provided,
when the concentration is changed, the control unit calculates the liquid surface height corresponding to the concentration after the change based on a difference between the concentration after the change and the concentration before the change, and controls the supply of the adjustment liquid to the processing tank based on the liquid surface height obtained by the calculation and a measurement value of the liquid surface gauge.
3. The substrate processing apparatus according to claim 1 or 2,
further comprises a concentration meter for measuring the concentration,
the control unit controls the supply of the adjustment liquid to the treatment tank based on a deviation between the set value of the concentration and a measurement value of the concentration meter when the concentration is maintained.
4. The substrate processing apparatus according to claim 3,
a liquid level gauge for measuring the height of the liquid level is further provided,
the control unit determines whether or not the concentration meter has failed based on a measurement value of the liquid level meter when controlling the supply of the adjustment liquid to the processing tank based on a deviation between the set value of the concentration and the measurement value of the concentration meter.
5. The substrate processing apparatus according to any one of claims 1, 2 and 4,
further comprises a liquid level meter for measuring the height of the liquid level and a concentration meter for measuring the concentration,
the control unit prohibits the supply of the control liquid to the processing tank based on a measurement value of the concentration meter when the failure of the concentration meter is detected, and performs the supply of the control liquid to the processing tank based on a measurement value of the liquid level meter.
6. The substrate processing apparatus according to claim 4,
the concentration meter has a hydraulic pressure meter for detecting the hydraulic pressure of the treatment liquid as an index of the concentration.
7. The substrate processing apparatus according to claim 4 or 6,
the concentration meter has a refractometer for detecting the refractive index of the treatment liquid as an index of the concentration.
8. A substrate processing method includes the steps of:
immersing a substrate in a treatment liquid stored in a treatment tank, the treatment liquid containing a first component and a second component having a boiling point higher than that of the first component to treat the substrate; and
supplying a control liquid containing the first component to the treatment tank to control the concentration of the second component in the treatment liquid,
wherein the step of supplying the conditioning liquid to the processing bath includes a step of changing the concentration,
the step of changing the concentration includes the steps of:
calculating a liquid level height in the processing tank corresponding to the concentration after the change based on a concentration difference between the concentration after the change and the concentration before the change; and
and supplying the adjustment liquid to the processing tank based on the calculated liquid surface height.
9. The substrate processing method according to claim 8,
further comprising the step of measuring the height of the liquid surface by means of a liquid level meter,
the step of changing the concentration includes the steps of:
calculating the liquid surface height corresponding to the concentration after the change based on a concentration difference between the concentration after the change and the concentration before the change; and
and supplying the adjustment liquid to the processing bath based on the liquid level height obtained by the calculation and a measurement value of the liquid level meter.
10. The substrate processing method according to claim 8 or 9,
further comprising a step of measuring the concentration by a concentration meter,
the step of supplying the conditioning liquid to the processing bath includes a step of maintaining the concentration,
the step of maintaining the concentration includes the steps of: the adjustment liquid is supplied to the processing tank based on a deviation between the set value of the concentration and a measurement value of the concentration meter.
11. The substrate processing method according to claim 10,
further comprising the step of measuring the height of the liquid surface by means of a liquid level meter,
the step of maintaining the concentration includes the steps of: when the supply of the adjustment liquid to the processing tank is controlled based on the deviation between the set value of the concentration and the measurement value of the concentration meter, the presence or absence of a failure in the concentration meter is determined based on the measurement value of the liquid level meter.
12. The substrate processing method according to any one of claims 8, 9 and 11,
further comprising a step of measuring the height of the liquid surface by a liquid surface meter and a step of measuring the concentration by a concentration meter,
the step of supplying the conditioning liquid to the processing bath includes the steps of: when a failure of the concentration meter is detected, the supply of the adjustment liquid to the processing tank based on the measurement value of the concentration meter is prohibited, and the supply of the adjustment liquid to the processing tank based on the measurement value of the liquid level meter is prohibited.
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