CN110648925A - Packaging process - Google Patents
Packaging process Download PDFInfo
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- CN110648925A CN110648925A CN201810682535.XA CN201810682535A CN110648925A CN 110648925 A CN110648925 A CN 110648925A CN 201810682535 A CN201810682535 A CN 201810682535A CN 110648925 A CN110648925 A CN 110648925A
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- plastic package
- temperature
- temperature zone
- packaging process
- plastic
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- 238000012858 packaging process Methods 0.000 title claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 238000005476 soldering Methods 0.000 claims description 31
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005452 bending Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 208000010392 Bone Fractures Diseases 0.000 description 3
- 206010017076 Fracture Diseases 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The application provides a packaging process. Packaging a chip to obtain a plastic package; heating the plastic package; and detecting the plastic package after the heating treatment to obtain an unbroken plastic package. The plastic package spare in this application can be through carrying out heat treatment for the plastic package spare that has the risk of breaking exposes in advance, and the producer of being convenient for eliminates the plastic package spare that is not conform to the requirement, can reduce the risk of breaking, the probability of breaking of electron producer end chip when welding electronic component.
Description
Technical Field
The application relates to the field of semiconductors, in particular to a packaging process.
Background
Currently, electronic manufacturers generally need to purchase a driving chip assembly from a manufacturer, and then solder electronic components required by electronic equipment onto the purchased driving chip assembly.
The electronic manufacturer end usually adopts a wave soldering process when soldering electronic components, a soldering surface on the driving chip assembly is directly contacted with high-temperature liquid tin, and the internal stress of the driving chip assembly is increased due to the difference between the thermal expansion coefficients of various materials forming the driving chip assembly, so that the driving chip assembly is damaged or broken, the production flow is influenced, and the production efficiency is reduced.
Disclosure of Invention
The present application provides a packaging process to solve the deficiencies in the related art.
According to an embodiment of the present application, there is provided a packaging process including:
packaging the chip to obtain a plastic package;
heating the plastic package;
and detecting the plastic package after the heating treatment to obtain an unbroken plastic package.
Optionally, the heating treatment of the plastic package includes:
and heating the plastic package by adopting reflow soldering equipment.
Optionally, the heating treatment of the plastic package includes:
heating the plastic package part from the first temperature zone to the second temperature zone;
and cooling the plastic package part from the second temperature zone to the third temperature zone.
Optionally, the rate of increase from the first temperature zone to the second temperature zone is not greater than the rate of decrease from the second temperature zone to the third temperature zone.
Optionally, the temperature value of the second temperature zone is not lower than 240 ℃ and not higher than 250 ℃.
Optionally, the peak temperature in the second temperature zone is 247 ℃.
Optionally, the time for holding the peak temperature of the second temperature zone is not less than 50 seconds and not more than 60 seconds.
Optionally, the time period from the first temperature zone to the peak temperature in the second temperature zone is not more than eight minutes.
Optionally, the encapsulating chip obtains a plastic package, including:
connecting the chip with a lead frame;
carrying out plastic packaging on the connected chip and the lead frame to obtain the plastic packaging piece;
and curing the plastic package.
Optionally, for an unbroken plastic package of a chip, the packaging process further includes:
removing burrs on the plastic package piece;
electroplating the plastic package;
and cutting ribs and bending the plastic sealing piece.
The technical scheme provided by the embodiment of the application can have the following beneficial effects:
known from above-mentioned embodiment, the plastic-sealed piece in this application can be through carrying out heat treatment for the plastic-sealed piece that has the risk of breaking exposes in advance, and the manufacturer of being convenient for eliminates the plastic-sealed piece that does not meet the requirements, can reduce the fracture risk, the fracture probability of electron manufacturer end chip when welding electronic component.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
FIG. 1 is a flow chart illustrating a packaging process according to an exemplary embodiment.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It is to be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
Currently, each large electronic manufacturer generally needs to purchase a driving chip assembly from other manufacturers, and the driving chip assembly can be purchased to solder other electronic components required by the electronic equipment. However, in the related art, electronic components are usually soldered by a wave soldering process, the soldering surface of the driving chip assembly is directly contacted with the high-temperature liquid tin, internal molecular movement is accelerated due to heating, intermolecular acting force is increased, internal stress of the driving chip assembly is correspondingly increased, and when the strength of the driving chip assembly is insufficient, breakage or fracture may occur, which affects the production flow and reduces the production efficiency. Therefore, the application aims to provide a packaging process to improve the strength of the driving chip assembly flowing out from a manufacturer end and reduce the damage risk and the damage probability when the driving chip assembly is used by an electronic manufacturer end.
FIG. 1 is a flow chart illustrating a packaging process according to an exemplary embodiment. As shown in fig. 1, the packaging process may include the following steps:
in step 101, the packaged chip obtains a plastic package.
In this embodiment, the chip may be ejected from the loading plate by the ejector pin, and then the chip may be placed on the lead frame by the suction nozzle. Wherein the loading plate may include a blue film, which is not limited in this application. The lead frame may be coated with an adhesive, which may include epoxy or the like, so that the chip can be fixed relative to the lead frame.
After the chip is attached to the lead frame, bonding connection may be performed between the chip and the lead frame, for example, the chip and the leads on the lead frame may be connected by gold wires. After the bonding is completed, plastic packaging can be performed on the connected chip and the lead frame to obtain a plastic packaging piece.
The plastic package process can be to wrap the chip and the lead frame with the insulation material in a molten state, and obtain the plastic package after the insulation material is molded. After plastic packaging, the plastic packaging part can be further cured, so that molecules of the insulating material are fully bonded and crosslinked, and the stability and the wear resistance of the plastic packaging part are improved. The curing process may be to place the plastic package in a baking oven for baking, where the baking temperature may be 175 ℃ and the baking time may be 6 hours. Of course, in other embodiments, the plastic package may be left to dry naturally, which is not limited in this application.
In step 102, the molding member is subjected to a heat treatment.
In this embodiment, the plastic package may be placed in any heating device for heating, and during the heating process, the movement of various material molecules inside the plastic package is accelerated, and the internal stress of the plastic package is increased accordingly. Therefore, the plastic package part with the damage risk or insufficient strength can be damaged in advance or broken seams can appear, so that a worker can eliminate the damaged plastic package part through detection, and the yield of the subsequent packaging structure during wave soldering is improved.
The heating treatment for the plastic package part may include a heating process of heating from the first temperature zone to the second temperature zone, and a cooling process of cooling from the second temperature zone to the third temperature zone, wherein the temperature value of the second temperature zone is not lower than 240 ℃ and not higher than 250 ℃, and in the second temperature zone, molecules of materials, such as copper, silicon and resin, included in the plastic package part can interact with each other, so that the internal stress of the plastic package part is increased, and the plastic package part with insufficient strength is damaged in advance.
The peak temperature of the second temperature zone may be 247 ℃, or 247 ℃ ± 2 ℃, and, in the heating process, the holding time of the peak temperature is not less than 50 seconds and not more than 60 seconds, so that the intermolecular movement in the plastic package is sufficient, and the plastic package with the risk of breakage is broken in advance as much as possible. The duration of the peak temperature may also be 57 seconds, 55 seconds, 56 seconds, etc., which is not limited by this application.
Furthermore, the rising rate of the first temperature zone rising to the second temperature zone is smaller than the falling rate of the second temperature zone falling to the third temperature zone, so that the second temperature zone is carried out after the plastic package part is fully preheated, the plastic package part is prevented from suddenly entering the high-temperature zone, the chip which cannot be damaged during wave soldering is prevented from being damaged, and the production cost is increased.
The rate of increase from the first temperature zone to the second temperature zone is not greater than 3 ℃/sec, for example, it may be 1.7 ℃/sec, or 1.8 ℃/sec, or 2 ℃/sec, etc., which is not limited in this application. The falling rate of the second to third temperature zones is not more than 6 ℃/s, for example, 2.7 ℃/s, 3 ℃/s, or 3.5C/s, etc., which is not limited in the present application. Moreover, the time period for raising the temperature from the first temperature zone to the peak temperature in the second temperature zone does not exceed eight minutes, and for example, may be eight minutes, seven minutes, six and half minutes, and the like, which is not limited in the present application.
In the above embodiments, the plastic package may be heated by a reflow soldering apparatus, the reflow soldering apparatus may include a conveyor belt, the plastic package may be placed on the conveyor belt, and the plastic package may sequentially go through the first temperature zone, the second temperature zone and the third temperature zone in the reflow soldering apparatus along with the transportation of the conveyor belt. In general, a reflow temperature profile for a reflow apparatus may include a pre-heat zone, a reflow zone, and a cool zone. The temperature corresponding to the reflow zone is higher than the temperatures of the preheating zone, the heating zone and the cooling zone, and the temperature corresponding to the reflow zone comprises the peak temperature of the reflow soldering temperature curve.
When adopting reflow soldering equipment to heat the plastic package spare in this application, first warm branching zone can be corresponding to the preheating zone and the zone of heating that are the reflow soldering temperature curve, the second warm branching zone can be corresponding to the reflow soldering temperature curve's reflow zone, the third temperature curve can be corresponding to the cooling space that is the reflow soldering temperature curve. Wherein, reflow soldering equipment can include one of five warm-area reflow soldering equipment, eight warm-area reflow soldering equipment and twelve warm-area reflow soldering equipment, this application limits this. In other words, as long as the plastic package in the present application can be subjected to the low-temperature-high-temperature-low-temperature heating process, the reflow soldering apparatus regardless of the temperature range is within the scope of the present application.
Regarding to adopt reflow soldering equipment to carry out the technical scheme that heats to plastic-sealed spare, this application carries out wave-soldering to different reflow soldering temperatures and the packaging structure who obtains under the no heat treatment condition, breakage rate when having obtained under the different conditions and carrying out wave-soldering is shown as table 1:
TABLE 1
As shown in table 1, when the plastic package is not subjected to the heat treatment, the obtained chip structure has the highest breakage rate during wave soldering, and when the reflow soldering temperature (i.e., the temperature of the second temperature region) is 240 ℃ or higher and does not exceed 250 ℃, the breakage rate of wave soldering is the lowest, and can almost reach 0 breakage rate. Therefore, the plastic package is heated, so that the plastic package with the damage risk is eliminated in advance, and the damage rate in wave soldering can be reduced; and when the temperature of the second temperature zone is between 240 ℃ and 250 ℃ in the heating process, the wave soldering loss rate is lowest.
In step 103, the plastic package after the heat treatment is inspected to obtain an unbroken plastic package.
In this embodiment, after the plastic package is heated, the plastic package which is not damaged or has no defect or crack may flow into the subsequent packaging process. Specifically, the non-breakage of the plastic package may mean that the chip in the plastic package is not broken, the circuit in the plastic package is not lifted, and no crack or flaw exists on the surface of the plastic package.
In each embodiment, the plastic package part can be printed to mark relevant information such as chip model, manufacturer and the like; the burr that the plastic envelope spare was left over in the course of the technology can also be got rid of, the aesthetic property of plastic envelope spare is improved, avoids burr scraping user or packing supplies. After the burrs of the plastic package are removed, the plastic package can be subjected to surface treatment, such as electroplating, so that the corrosion resistance of the preset packaging structure can be improved. After the electroplating is finished, the plastic package piece can be subjected to rib cutting and bending so as to be suitable for customer requirements.
Specifically, the molding compound may generally include a plurality of chips, the plurality of chips, and the lead frame and the package portion corresponding to each chip are separated by a rib cutting process, and then the leads corresponding to each chip may be bent according to the requirement of the target package structure on the shape of the leads, so as to obtain the target package structure.
In each embodiment, the process flow of heating the plastic package can be performed after the plastic package is cured, so that the subsequent processes of printing, electroplating, deburring and rib cutting and bending can be performed on the plastic package which is not damaged, the working time is saved, and the material waste is avoided; alternatively, in some other embodiments, the printing, plating, deburring and bending may be performed after any one of the processes is completed, and the application is not limited thereto.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. A packaging process, comprising:
packaging the chip to obtain a plastic package;
heating the plastic package;
and detecting the plastic package after the heating treatment to obtain an unbroken plastic package.
2. The packaging process according to claim 1, wherein the heating treatment of the plastic package comprises:
and heating the plastic package by adopting reflow soldering equipment.
3. The packaging process according to claim 1, wherein the heating treatment of the plastic package comprises:
heating the plastic package part from the first temperature zone to the second temperature zone;
and cooling the plastic package part from the second temperature zone to the third temperature zone.
4. The packaging process according to claim 3, wherein the rising rate of the temperature from the first temperature zone to the second temperature zone is not more than the falling rate of the temperature from the second temperature zone to the third temperature zone.
5. The packaging process according to claim 3, wherein the temperature of the second temperature zone is not lower than 240 ℃ and not higher than 250 ℃.
6. The packaging process according to claim 3, wherein the peak temperature in the second temperature zone is 247 ℃.
7. The packaging process according to claim 3, wherein the peak temperature of the second temperature zone is maintained for not less than 50 seconds and not more than 60 seconds.
8. The packaging process of claim 3, wherein the time period from the first temperature zone to the peak temperature in the second temperature zone is no more than eight minutes.
9. The packaging process according to claim 1, wherein the packaged chip is obtained as a plastic package comprising:
connecting the chip with a lead frame;
carrying out plastic package on the connected chip and the lead frame to obtain a plastic package piece;
and curing the plastic package.
10. The packaging process of claim 1, further comprising: removing burrs on the plastic package piece;
electroplating the plastic package;
and cutting ribs and bending the plastic sealing piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810682535.XA CN110648925A (en) | 2018-06-27 | 2018-06-27 | Packaging process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810682535.XA CN110648925A (en) | 2018-06-27 | 2018-06-27 | Packaging process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110648925A true CN110648925A (en) | 2020-01-03 |
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ID=68988897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810682535.XA Pending CN110648925A (en) | 2018-06-27 | 2018-06-27 | Packaging process |
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| Country | Link |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54101677A (en) * | 1978-01-27 | 1979-08-10 | Hitachi Ltd | Detecting method for leak presence in resin seal-type semiconductor device |
| US20030215979A1 (en) * | 2002-05-15 | 2003-11-20 | Jensen David G. | Methods and apparatus for microelectronic component manufacture |
-
2018
- 2018-06-27 CN CN201810682535.XA patent/CN110648925A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54101677A (en) * | 1978-01-27 | 1979-08-10 | Hitachi Ltd | Detecting method for leak presence in resin seal-type semiconductor device |
| US20030215979A1 (en) * | 2002-05-15 | 2003-11-20 | Jensen David G. | Methods and apparatus for microelectronic component manufacture |
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Application publication date: 20200103 |
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