CN110644054A - Formula of monocrystalline silicon texturing additive containing polyvinylpyrrolidone and shrinkable glycol - Google Patents
Formula of monocrystalline silicon texturing additive containing polyvinylpyrrolidone and shrinkable glycol Download PDFInfo
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- CN110644054A CN110644054A CN201910965961.9A CN201910965961A CN110644054A CN 110644054 A CN110644054 A CN 110644054A CN 201910965961 A CN201910965961 A CN 201910965961A CN 110644054 A CN110644054 A CN 110644054A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 54
- 239000000654 additive Substances 0.000 title claims abstract description 34
- 230000000996 additive effect Effects 0.000 title claims abstract description 33
- 229920000036 polyvinylpyrrolidone Polymers 0.000 title claims abstract description 26
- 239000001267 polyvinylpyrrolidone Substances 0.000 title claims abstract description 26
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 title claims abstract description 26
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 title description 13
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 title description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims abstract description 30
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000008367 deionised water Substances 0.000 claims abstract description 19
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 9
- -1 organic acid salt Chemical class 0.000 claims abstract description 9
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 9
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920003080 Povidone K 25 Polymers 0.000 claims abstract description 4
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims abstract description 4
- VIQSRHWJEKERKR-UHFFFAOYSA-L disodium;terephthalate Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=C(C([O-])=O)C=C1 VIQSRHWJEKERKR-UHFFFAOYSA-L 0.000 claims abstract description 4
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims abstract description 4
- 229940103091 potassium benzoate Drugs 0.000 claims abstract description 4
- 235000010235 potassium benzoate Nutrition 0.000 claims abstract description 4
- 239000004300 potassium benzoate Substances 0.000 claims abstract description 4
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 4
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 4
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 4
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims abstract description 3
- ITIONVBQFUNVJV-UHFFFAOYSA-N Etomidoline Chemical compound C12=CC=CC=C2C(=O)N(CC)C1NC(C=C1)=CC=C1OCCN1CCCCC1 ITIONVBQFUNVJV-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229920003081 Povidone K 30 Polymers 0.000 claims abstract description 3
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims abstract description 3
- GZCKIUIIYCBICZ-UHFFFAOYSA-L disodium;benzene-1,3-dicarboxylate Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC(C([O-])=O)=C1 GZCKIUIIYCBICZ-UHFFFAOYSA-L 0.000 claims abstract description 3
- 229960003885 sodium benzoate Drugs 0.000 claims abstract description 3
- 229940006198 sodium phenylacetate Drugs 0.000 claims abstract description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 24
- 238000004140 cleaning Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 210000002268 wool Anatomy 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 231100000053 low toxicity Toxicity 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- OVOUKWFJRHALDD-UHFFFAOYSA-N 2-[2-(2-acetyloxyethoxy)ethoxy]ethyl acetate Chemical compound CC(=O)OCCOCCOCCOC(C)=O OVOUKWFJRHALDD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical compound NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012847 fine chemical Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000004962 physiological condition Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to an additive of a monocrystalline silicon texturing solution, which comprises the components of polyvinylpyrrolidone (PVP), diglycol, benzene-containing organic acid salt, sodium silicate and deionized water. Wherein the PVP is one or a mixture of more of PVP-K12, PVP-K15, PVP-K17, PVP-K25 and PVP-K30, and the weight ratio of the PVP to the water is 0.2-1.0: 100; the diglycol comprises one or a mixture of more of diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol and tripropylene glycol, and the weight ratio of the diglycol to the water is 1.0-3.0: 100; the benzene-containing organic acid salt is one or a mixture of more of sodium benzoate, potassium benzoate, sodium phenylacetate, sodium terephthalate and sodium isophthalate, and the weight ratio of the benzene-containing organic acid salt to water is 0.1-1.0: 100; the weight ratio of the sodium silicate to the water is 0.1-1.0: 100. The formula of the single crystal silicon surface texturing agent is as follows: 25.0-45.0mL of NaOH solution with the weight percentage concentration of 30 percent is added into 1L of deionized water, and 10.0-20.0mL of the additive is added.
Description
Technical Field
The invention belongs to the technical field of solar cell monocrystalline silicon pieces, and particularly relates to an influence of the type and content of polyvinylpyrrolidone and acetal on texturing of a monocrystalline silicon piece.
Background
The photovoltaic power generation is a process of converting solar energy into electric energy through a solar cell, silicon serving as a fourth main group element has four electrons on the outermost layer, the structure is not stable, when the energy of light with a certain frequency is absorbed, the electrons on the outer layer are separated from the constraint of atomic nuclei and become free electrons, the positions of the original electrons become holes, and the electrons are negatively charged and the holes are positively charged. The number of free electrons and holes is equal in a pure silicon crystal. In the atomic crystal, valence electrons are not all owned by a single atom, and sharing can be realized, and electrons moving on similar orbitals on different atoms can move in the whole crystal.
Because of the mutual influence among atoms in the crystal, the energy levels with similar energy in the original atoms are split into a series of new energy levels which are close to the original energy levels. These new energy levels are essentially all connected together in one piece, forming an energy band. When n atoms approach to form a crystal, an energy level corresponding to an original isolated atom is split into n close energy levels due to interaction between the atoms. The electrons originally on the same energy level are distributed on n new energy level bands which are very close. The energy level bands are divided into full bands, unfilled bands, empty bands, forbidden bands, and full electrons cannot conduct electricity, and only the full electrons cannot conduct electricity. In the band structure of the silicon semiconductor, a forbidden band exists between a full band and an empty band, but the forbidden band is not wide, and the required transition energy is not high. The semiconductor is an intrinsic (pure) semiconductor, is a perfect crystal without defects, and electrons and holes in intrinsic carriers participate in conduction, and the number of positive and negative carriers is equal and small. The doped semiconductor is formed by doping trace other elements into the intrinsic semiconductor, the doped quinquevalent element is called an N-type semiconductor, and the doped trivalent element is called a P-type semiconductor.
The most basic principle of photovoltaic power generation is the photoelectric effect, namely the phenomenon that radiation light with more than a certain frequency irradiates an object to enable electrons to receive photon energy and convert the photon energy into photoelectrons to break loose the constraint of atoms, so that the object is electrified, and the solar photocell amplifies the effect to a usable level through a smart structure. The reason for generating the photoelectric effect is that the energy of the photon for giving an electron is larger than the energy (i.e. work function) bound by an atomic nucleus, and the photoelectric effect is generated by two ideas: firstly, the photons have higher energy; and the work function is reduced, and actually, the solar photocell is the latter. In order to make silicon crystal lose electrons more easily, doping is needed, phosphorus is doped in, one more electron is found, and the electron is similar to the outermost electron in metal and is very easy to become free electron.
There are two main types of losses that reduce the conversion efficiency of solar cells: optical and electrical losses, which can be reduced by anti-reflection coatings and surface texturing of single crystal silicon. When incident light irradiates the surface of a silicon wafer at room temperature and the energy of the incident light is 1.12ev higher than the forbidden band width of semiconductor silicon, electrons can be transited from the valence band to the conduction band, and a photocurrent is formed. At present, two main methods for reducing the loss of light energy are manufacturing an antireflection film and texturing on the surface of monocrystalline silicon. The preparation of the textured light trap structure has become an important process in the process of the monocrystalline silicon solar cell because the textured light trap structure has high anti-reflection capability so as to improve the light absorption rate of the solar cell.
The monocrystalline silicon piece texturing generally uses alkaline etching solution which can be inorganic or organic, and for organic etching, most of the monocrystalline silicon pieces are etched by using inorganic alkaline solution because the harmfulness of the monocrystalline silicon pieces is little used by people. The result of texturing a single crystal silicon solar cell is the random formation of "pyramids" on its surface, such "pyramids" resulting from anisotropic etching of the planar density in the (100) and (111) directions. In a specific alkaline solution, the corrosion rate of the (100) surface of the monocrystalline silicon piece is tens of times greater than that of the (111) surface, so that pyramid structures are formed on the surface of the monocrystalline silicon.
The etching rate of pure alkaline solution to the silicon surface is too fast and is not easy to control, hydrogen generated in the texturing process is easily influenced by the surface tension of the liquid and is attached to the surface of the silicon wafer and is difficult to discharge, so that the contact of reactants and the silicon wafer is hindered, and the texture surface structure is influenced.
The invention mainly researches the influence of the types and contents of polyvinylpyrrolidone and the glycol and other auxiliary additives on the texturing effect of the monocrystalline silicon surface. Polyvinylpyrrolidone (PVP) is a nonionic polymer compound, is the most distinctive of N-vinyl amide polymers, and is the most deeply and widely researched fine chemical varieties. Has been developed into 3 types of non-ionic, cationic and anionic products, namely 3 specifications of industrial grade, pharmaceutical grade and food grade, and has a relative molecular mass of thousands to more than one million of homopolymer, copolymer and cross-linked polymer series products, and has wide application with excellent and unique properties.
PVP is classified into four grades based on its average molecular weight, which is conventionally represented by the K value, with different K values representing the respective PVP average molecular weight ranges. The K value is actually a characteristic value related to the relative viscosity of the aqueous solution of PVP, which in turn is a physical quantity related to the molecular weight of the high polymer, and thus the K value can be used to characterize the average molecular weight of PVP. In general, the larger the K value, the higher the viscosity, and the stronger the adhesiveness. For example, K12 for PVP represents a K value of 10.2-13.8 and a molecular weight of 3000-7000, which is denoted as PVP-K12, respectively PVP-K15, PVP-K25, etc., representing different K values or molecular weights of PVP. PVP is a synthetic water-soluble polymer compound, has the general properties of the water-soluble polymer compound, such as colloid protection, film-forming property, cohesiveness, hygroscopicity, solubilization or condensation, but has the most characteristic and is emphasized by excellent solubility and physiological compatibility. In synthetic polymers, such as PVP, it is not uncommon that PVP is soluble in water as well as in most organic solvents, has very low toxicity, and is well compatible with physiological conditions, particularly in the fields of medicine, food, and cosmetics, which are closely related to human health.
The diglycol mainly relates to small molecular diols such as ethylene glycol and propylene glycol and polycondensates of two molecules, three molecules and four molecules. The common glycol is colorless transparent viscous liquid, has hygroscopicity, no corrosivity, combustibility and low toxicity. It is used as solvent, extractant, drying agent, antifreezing agent, gas dehydrating agent and plasticizer, and can be mixed with water, ethanol, acetone, ether and glycol but not dissolved in benzene, toluene and carbon tetrachloride.
Disclosure of Invention
The invention provides an additive of a monocrystalline silicon piece texturing solution, which is characterized in that when the monocrystalline silicon piece for a solar cell is subjected to surface texturing, the additive is added into an alkaline texturing solution, so that an excellent texturing effect is achieved. The size of the suede pyramid is small after texturing, reflection of light can be effectively reduced, and therefore photoelectric conversion efficiency of the assembled solar cell can be improved.
The invention provides an additive formula for monocrystalline silicon piece texturing solution, which comprises the following components: PVP, diglycol, benzene-containing organic acid salt, sodium silicate and deionized water.
On the basis of the scheme, PVP in the additive is one or a mixture of more of PVP-K12, PVP-K15, PVP-K17, PVP-K25 and PVP-K30, and the weight ratio of PVP to water is 0.2-1.0: 100.
On the basis of the scheme, the additive disclosed by the invention is characterized in that the diglycol is one or a mixture of more of diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol and tripropylene glycol, and the weight ratio of the diglycol to the water is 1.0-3.0: 100.
On the basis of the scheme, the benzene-containing organic acid salt in the additive is one or a mixture of more of sodium benzoate, potassium benzoate, sodium phenylacetate, sodium terephthalate and sodium isophthalate, and the weight ratio of the benzene-containing organic salt to water is 0.1-1.0: 100.
On the basis of the scheme, the weight ratio of the sodium silicate to the water in the additive is 0.1-1.0: 100.
The invention also provides a formula of the monocrystalline silicon piece surface texture surface making agent, which comprises the following components in percentage by weight: adding 25.0-45.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 10.0-20.0mL of the additive to obtain the alkaline wool making solution.
The surface texturing process of the monocrystalline silicon wafer comprises the following steps: (1) cleaning the cut monocrystalline silicon wafer in a pre-cleaning solution, cleaning the monocrystalline silicon wafer with deionized water, and immersing the monocrystalline silicon wafer in an alkaline wool making solution for wool making, wherein the wool making temperature is 75-90 ℃, and the wool making time is 7-15 min; (2) soaking the textured monocrystalline silicon wafer obtained in the step (1) in deionized water at room temperature for cleaning, and then carrying out mixed acid cleaning; (3) and soaking the acid-washed monocrystalline silicon piece into deionized water, cleaning, soaking the monocrystalline silicon piece into deionized water at 85 ℃, slowly pulling the monocrystalline silicon piece out, and drying the monocrystalline silicon piece in a drying box to obtain the texture-making monocrystalline silicon piece product.
When the alkaline texturing solution prepared by the additive is used for texturing, the size of a pyramid formed on the surface of a monocrystalline silicon wafer is less than 4 microns, the color of the whole surface of the silicon wafer is uniform, the average reflectivity is lower than 10%, and the etched silicon wafer amount is less than 3.5%.
The invention has the advantages that: after the additive is adopted, compared with the case that no additive is added or IPA is used as the additive, the texturing time can be shortened, and the texturing effect is obviously improved. The size of the textured pyramid is smaller, the distribution is more uniform, and the reflectivity of the silicon wafer is obviously reduced. The method has a remarkable effect on the finally obtained solar cell and improves the yield of the cell. In addition, the additive of the invention has no toxicity, no corrosiveness, no irritation, no combustion and explosion hazard, and no harm to human body and environment.
Drawings
FIG. 1 is a scanning electron microscope image of a textured surface of a single crystal silicon wafer obtained by an optimal additive formulation.
FIG. 2 is a partial enlarged view of a scanning electron microscope of a textured surface of a monocrystalline silicon wafer obtained by an optimal additive formula.
FIG. 3 is a partial magnified view of a single crystal silicon wafer side taken by a scanning electron microscope of the best additive formulation.
FIG. 4 is a reflection spectrum of a textured surface of a single crystal silicon wafer obtained by an optimal additive formulation.
Detailed Description
The present invention will be described in further detail with reference to the following examples, which are provided only for illustrating the present invention and are not to be construed as limiting the present invention.
Example 1
The method comprises the following steps of: 1) preparing an additive: 1L of deionized water is taken as a solvent, and PVP-K122.0 g, diethylene glycol 12.0g, sodium benzoate 2.0g and sodium silicate 3.0g are added for full dissolution; 2) preparing a texturing solution: adding 33.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 12.0mL of additive to obtain alkaline wool making solution; 3) pre-cleaning the cut monocrystalline silicon wafer, and immersing the monocrystalline silicon wafer into a texturing solution, wherein the temperature of the texturing solution is 80 ℃, and the texturing time is 14 min; 4) cleaning the textured monocrystalline silicon wafer with mixed acid, then cleaning the textured monocrystalline silicon wafer with deionized water, and drying the product in a drying oven to obtain the textured monocrystalline silicon wafer with the pyramid size of 1-4 μm, the whole surface of the silicon wafer is uniform in color, the reflectivity is 8.6% at the lowest, and the etched silicon wafer amount is 3.2%.
Example 2
The method comprises the following steps of: 1) preparing an additive: 1L of deionized water is taken as a solvent, and PVP-K153.0 g, triethylene glycol diacetate 15.0g, potassium benzoate 3.0g and sodium silicate 1.0g are added for full dissolution; 2) preparing a texturing solution: adding 38.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 15.0mL of additive to obtain alkaline wool making solution; 3) pre-cleaning the cut monocrystalline silicon wafer, and immersing the monocrystalline silicon wafer into a texturing solution, wherein the temperature of the texturing solution is 85 ℃, and the texturing time is 13 min; 4) and cleaning the textured monocrystalline silicon piece by using mixed acid, cleaning the textured monocrystalline silicon piece by using deionized water, and drying the product in a drying box to obtain the textured monocrystalline silicon piece.
Example 3
The method comprises the following steps of: 1) preparing an additive: 1L of deionized water is taken as a solvent, and PVP-K171.0 g, dipropylene glycol 18.0g, sodium terephthalate 2.0g and sodium silicate 2.0g are added for full dissolution; 2) preparing a texturing solution: adding 42.0mL of NaOH solution with the weight percentage concentration of 30% into 1L of deionized water, and adding 18.0mL of additive to obtain alkaline wool making solution; 3) pre-cleaning the cut monocrystalline silicon wafer, and immersing the cut monocrystalline silicon wafer into a texturing solution, wherein the temperature of the texturing solution is 88 ℃, and the texturing time is 12 min; 4) and cleaning the textured monocrystalline silicon piece by using mixed acid, cleaning the textured monocrystalline silicon piece by using deionized water, and drying the product in a drying box to obtain the textured monocrystalline silicon piece.
Claims (7)
1. An additive for a monocrystalline silicon piece texturing solution, which is characterized by comprising the following components: polyvinyl pyrrolidone (PVP), diglycol, benzene-containing organic acid salt, sodium silicate and deionized water.
2. An additive for a texturing solution of a monocrystalline silicon wafer is disclosed in claim 1, wherein PVP is one or a mixture of PVP-K12, PVP-K15, PVP-K17, PVP-K25 and PVP-K30, and the weight ratio of PVP to water is 0.2-1.0: 100.
3. The additive as claimed in claim 1, wherein the diglycol includes one or more of diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol and tripropylene glycol, and the weight ratio of the diglycol to the water is 1.0-3.0: 100.
4. The additive as claimed in claim 1, wherein the salt of organic acid containing benzene is one or more of sodium benzoate, potassium benzoate, sodium phenylacetate, sodium terephthalate and sodium isophthalate, and the weight ratio of the salt of organic acid containing benzene to water is 0.1-1.0: 100.
5. The composition according to claim 1, wherein the weight ratio of sodium silicate to water is 0.1-1.0: 100.
6. A preparation method of a texturing solution for the surface of a monocrystalline silicon wafer is characterized in that 25.0-45.0mL of NaOH solution with the weight percentage concentration of 30% is added into 1L of deionized water, and 10.0-20.0mL of additive is added to obtain an alkaline texturing solution.
7. Based on the claims 1-6, the texture etching solution prepared by the additive forms pyramids with the size less than 4 μm on the surface of a monocrystalline silicon wafer, the color of the whole surface of the silicon wafer is uniform, the average reflectivity is less than 10%, and the etched silicon wafer amount is less than 3.5%.
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| CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
| JP2015088713A (en) * | 2013-11-01 | 2015-05-07 | 日本酢ビ・ポバール株式会社 | Texture etchant, liquid additive agent for texture etchant, texture-formed substrate, method for manufacturing texture-formed substrate, and solar battery |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN107034518A (en) * | 2017-06-26 | 2017-08-11 | 张兆民 | A kind of monocrystalline silicon flocking additive |
| CN107287597A (en) * | 2016-03-30 | 2017-10-24 | 杭州聚力氢能科技有限公司 | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
| JP2015088713A (en) * | 2013-11-01 | 2015-05-07 | 日本酢ビ・ポバール株式会社 | Texture etchant, liquid additive agent for texture etchant, texture-formed substrate, method for manufacturing texture-formed substrate, and solar battery |
| CN107287597A (en) * | 2016-03-30 | 2017-10-24 | 杭州聚力氢能科技有限公司 | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method |
| CN106521636A (en) * | 2016-12-30 | 2017-03-22 | 德清丽晶能源科技有限公司 | Single crystal wafer texturing additive |
| CN107034518A (en) * | 2017-06-26 | 2017-08-11 | 张兆民 | A kind of monocrystalline silicon flocking additive |
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