CN110634730B - Method for reworking gate oxide interruption after groove Schottky polysilicon deposition - Google Patents
Method for reworking gate oxide interruption after groove Schottky polysilicon deposition Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000008021 deposition Effects 0.000 title claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 13
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 9
- 239000011259 mixed solution Substances 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910003638 H2SiF6 Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 2
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- 229910020479 SiO2+6HF Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Abstract
A gate oxide interruption rework method after groove Schottky polysilicon deposition. Relates to the technical field of manufacturing of discrete devices in the semiconductor manufacturing technology, in particular to a gate oxide interruption reworking method after groove Schottky polycrystalline silicon is deposited. The gate oxide interruption reworking method after the groove Schottky polycrystalline silicon is deposited is provided, the influence on the gate oxide is small, and a good Poly reworking effect can be achieved. The invention measures the thickness T of the Poly layer of the product to be reworked in advance1And the corresponding time t required for etching1=T1And/5000, effectively removing the Poly layer by using silicon etching solution (HNO 3+ HF + HAc + H2O) + nitric acid (HNO 3), and effectively removing the Poly by using mixed solution with a certain mass ratio, and simultaneously reducing the influence on the gate oxide layer, thereby achieving a good Poly reworking effect. The method has the characteristics of less influence on the gate oxide, good Poly reworking effect and the like.
Description
Technical Field
The invention relates to the technical field of discrete device manufacturing in the semiconductor manufacturing technology, in particular to a gate oxide interruption reworking method after groove Schottky polycrystalline silicon is deposited.
Background
In the manufacturing process of the trench schottky product, the gate oxide deposition and the Poly deposition are time-consuming and important processes, and when the process is interrupted due to other abnormal reasons in the manufacturing process, the gate oxide is seriously damaged when the common oxidant is used for removing the Poly, so the product can only be discarded and cannot be reworked.
Disclosure of Invention
Aiming at the problems, the invention provides a gate oxide interruption reworking method after groove Schottky polycrystalline silicon deposition, which has less influence on gate oxide and can achieve good Poly reworking effect.
The technical scheme of the invention is as follows: a gate oxide interruption rework method after groove Schottky polysilicon deposition comprises the following steps:
1) testing the thickness T1 of the polysilicon layer of the product to be reworked by using measuring equipment;
2) calculating the corresponding time T1= T1/5000 needing to be corroded according to the corrosion speed of the corrosion liquid;
3) putting the product to be reworked into an acid tank containing the mixed solution, taking out the product after t1 time of reaction, and cleaning the residual acid solution on the surface;
4) measuring the residual Poly thickness T2 on the surface of the product cleaned in the step 3);
5) adding rot according to the residual thickness T2, wherein the rot adding time is T2= T2/5000;
6) and 5) after the Poly layer is corroded, removing residual gate oxide according to the thickness measured by the gate oxide layer by using BOE corrosive liquid.
The mixed solution in the step 3) is 68 percent of HNO349% HF, 98% HAc and H2And (3) mixed solution of O.
68% HNO349% HF, 98% HAc and H2The volume ratio of O is 8:1:2:1
The BOE corrosive liquid in the step 6) comprises 49% of HF aqueous solution and 40% of NH4F, water solution.
The 49% HF aqueous solution and 40% NH4The volume ratio of the F aqueous solution is 1: 20.
the invention measures the thickness T of the Poly layer of the product to be reworked in advance1 And the corresponding time t required for etching1=T1/5000, using silicon etching solution (HNO)3+ HF + HAc + H2O) + nitric acid (HNO3) Carry out the Poly layer and carry out effectual getting rid of, after effectively getting rid of the Poly through the mixed solution of certain mass ratio, reduce simultaneously and influence the gate oxide layer to reach good Poly reworking effect. The method has the characteristics of less influence on the gate oxide, good Poly reworking effect and the like.
Drawings
Figure 1 is a schematic diagram of the structure of a completed gate oxide deposition product,
FIG. 2 is a schematic view of a completed Poly deposition layer,
in the figure, 1 is a gate oxide deposition layer, and 2 is a Poly layer.
Detailed Description
The invention is shown in fig. 1-2, the object of the invention: using a silicon etching liquid (HNO)3+HF+HAc+H2O) + nitric acid (HNO)3) And removing the Poly layer 2 at a corrosion speed of about 5000A/min and an Oxide corrosion speed of about 100A/min, wherein the mixed solution can effectively remove the Poly layer, has small influence on the gate Oxide deposition layer 1 and can achieve a good Poly rework effect.
A gate oxide interruption rework method after groove Schottky polysilicon deposition comprises the following steps:
1) and testing the thickness T of the layer of the polysilicon (Poly in the case) of the product to be reworked by using the measuring equipment1；
2) Calculating the corresponding time t required to be corroded according to the corrosion speed of the corrosion liquid1=T1/5000 (unit: min);
3) putting the product to be reworked into an acid tank containing the mixed solution, and reacting t1After the time, taking out the product, and cleaning the residual acid liquor on the surface; washing with pure water to remove residual acid solution
4) Measuring the residual Poly thickness T2 on the surface of the product cleaned in the step 3);
5) adding rot according to the residual thickness T2, wherein the rot adding time is T2= T2/5000; the corrosion adding process is to put the cleaned product into the acid solution tank again for treatment;
6) and 5) after the Poly layer is corroded, removing residual gate oxide by using BOE corrosive liquid according to the thickness measured by the actual gate oxide layer. Chemical equation of reaction: SiO 22+6HF=H2SiF6+2H2O
The mixed solution in the step 3) is 68 percent of HNO349% HF, 98% HAc and H2And (3) mixed solution of O.
68% HNO349% HF, 98% HAc and H2The volume ratio of O is 8:1:2:1
The BOE corrosive liquid in the step 6) comprises 49% of HF aqueous solution and 40% of NH4F, water solution.
The BOE corrosive liquid is as follows: buffered oxide etchantConductor commoditizing agent, here 49% aqueous HF: 40% NH4Aqueous F = 1: 20 (volume ratio);
the 49% HF aqueous solution and 40% NH4The volume ratio of the F aqueous solution is 1: 20.
the reaction equation is as follows: 1. 3Si +18HF +4HNO3=3H2SiF6+4NO↑+8H2O
2、SiO2+6HF=H2SiF6+2H2O
The disclosure of the present application also includes the following points:
(1) the drawings of the embodiments disclosed herein only relate to the structures related to the embodiments disclosed herein, and other structures can refer to general designs;
(2) in case of conflict, the embodiments and features of the embodiments disclosed in this application can be combined with each other to arrive at new embodiments;
the above embodiments are only embodiments disclosed in the present disclosure, but the scope of the disclosure is not limited thereto, and the scope of the disclosure should be determined by the scope of the claims.
Claims (5)
1. A gate oxide interruption rework method after groove Schottky polysilicon deposition is characterized by comprising the following steps:
1) testing the thickness T1 of the polysilicon layer of the product to be reworked by using measuring equipment;
2) calculating the corresponding time T1= T1/5000 needing to be corroded according to the corrosion speed of the corrosion liquid;
3) putting the product to be reworked into an acid tank containing the mixed solution, taking out the product after t1 time of reaction, and cleaning the residual acid solution on the surface;
4) measuring the residual Poly thickness T2 on the surface of the product cleaned in the step 3);
5) adding rot according to the residual thickness T2, wherein the rot adding time is T2= T2/5000;
6) and 5) after the Poly layer is corroded, removing residual gate oxide according to the thickness measured by the gate oxide layer by using BOE corrosive liquid.
2. The method of claim 1, wherein the mixed solution in step 3) is 68% HNO349% HF, 98% HAc and H2And (3) mixed solution of O.
3. The method of claim 2, wherein the rework is 68% HNO after deposition of Schottky polysilicon349% HF, 98% HAc and H2The volume ratio of O is 8:1:2: 1.
4. The method as claimed in claim 2, wherein said BOE etchant in step 6) comprises 49% HF solution and 40% NH4F, water solution.
5. The method of claim 4, wherein the 49% HF aqueous solution and 40% NH comprises4The volume ratio of the F aqueous solution is 1: 20.
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| CN102446732A (en) * | 2011-11-29 | 2012-05-09 | 上海华力微电子有限公司 | Grid reworking process capable of improving stability of multi-time exposure |
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