CN108735589A - A kind of restorative procedure of polysilicon surface - Google Patents
A kind of restorative procedure of polysilicon surface Download PDFInfo
- Publication number
- CN108735589A CN108735589A CN201810530830.3A CN201810530830A CN108735589A CN 108735589 A CN108735589 A CN 108735589A CN 201810530830 A CN201810530830 A CN 201810530830A CN 108735589 A CN108735589 A CN 108735589A
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- CN
- China
- Prior art keywords
- polysilicon
- polysilicon surface
- restorative procedure
- procedure according
- coarse
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 119
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000243 solution Substances 0.000 claims abstract description 18
- 239000012670 alkaline solution Substances 0.000 claims abstract description 16
- 230000001771 impaired effect Effects 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 2
- 229960002050 hydrofluoric acid Drugs 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
Abstract
The present invention discloses a kind of restorative procedure of polysilicon surface, during being suitable for repairing impaired polysilicon surface, wherein providing one has the semiconductor structure of impaired polysilicon surface, further comprising the steps of：Step S1, polysilicon surface is cleaned with an acid solution, to remove the oxidation film on polysilicon surface；Step S2, polysilicon surface is handled with an alkaline solution, so that polysilicon surface is coarse；Step S3, in depositing a polysilicon layer on coarse polysilicon surface；Step S4, polysilicon layer is planarized.Technical scheme of the present invention advantageous effect is：Polysilicon surface is handled by acid solution and alkaline solution, and redeposited polysilicon layer further improves the quality of polysilicon surface with the border issue being effectively improved between polysilicon surface and the polysilicon layer of deposition on impaired polysilicon surface.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of restorative procedures of polysilicon surface.
Background technology
With the development of large scale integrated circuit, the continuous improvement of integrated level, because the high density of device, small size cause
The influence that various effects manufacture semiconductor technology result becomes increasingly conspicuous.
Polysilicon gate is widely used in integrated circuit, and during integrated, there are the following problems：(1) in polycrystalline
Silicon is exposed among air for a long time, and polysilicon is oxidized easily to generate oxidation film, for the polysilicon aoxidized, wheel
Exterior feature has occurred and that change, as shown in Fig. 2, not finding restorative procedure also at present, directly scraps；(2) in semiconductor technology board
When alarm occurs, if polysilicon surface remains phosphoric acid, and it is exposed among air for a long time, polysilicon is easily eclipsed
It carves, causes polysilicon to be damaged, its surface profile is caused to change, as shown in Fig. 2, if directly on the polysilicon of damage
Redeposited polysilicon layer will appear the bad problem of interfacial adhesion between two-layer polysilicon, be currently to handle damage using acid
The polysilicon of wound still remains the bad problem of bonding interface.
Invention content
For the above-mentioned problems in the prior art, a kind of restorative procedure of polysilicon surface is now provided.
Specific technical solution is as follows：
A kind of restorative procedure of polysilicon surface, during being suitable for repairing impaired polysilicon surface, wherein provide
One has the semiconductor structure of impaired polysilicon surface, further comprising the steps of：
Step S1, the polysilicon surface is cleaned with an acid solution, to remove the oxidation film on the polysilicon surface；
Step S2, the polysilicon surface is handled with an alkaline solution, so that the polysilicon surface is coarse；
Step S3, in depositing a polysilicon layer on the coarse polysilicon surface；
Step S4, the polysilicon layer is planarized.
Preferably, in the step S1, the acid solution is the dilute solution of hydrofluoric acid and water.
Preferably, the volume ratio of the water and the hydrofluoric acid is 200:1.
Preferably, in the step S2, the alkaline solution is ammonium hydroxide.
Preferably, the volume ratio of the ammonium hydroxide is 50:1.
Preferably, after the step S2, the alkaline solution repairs the side of the smooth coarse polysilicon surface
Edge region.
Preferably, in the step S3, using chemical vapor deposition method to deposit the polysilicon layer.
Preferably, in the step S4, using chemical and mechanical grinding method to planarize the polysilicon layer.
Technical scheme of the present invention advantageous effect is：Polysilicon surface is handled by acid solution and alkaline solution, and
The redeposited polysilicon layer on impaired polysilicon surface, be effectively improved polysilicon surface and deposition polysilicon layer it
Between border issue, further improve the quality of polysilicon surface.
Description of the drawings
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is the flow chart of the restorative procedure about polysilicon surface in the present invention；
Fig. 2-6 is the technical process schematic diagram of the restorative procedure about polysilicon surface in the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of not making creative work it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
The present invention includes a kind of restorative procedure of polysilicon surface, is suitable for repairing the process of impaired polysilicon surface 1
In, wherein providing one has the semiconductor structure 2 of impaired polysilicon surface, further comprising the steps of：
Step S1, polysilicon surface 1 is cleaned with an acid solution, to remove the oxidation film on polysilicon surface 1；
Step S2, polysilicon surface 1 is handled with an alkaline solution, so that polysilicon surface 1 is coarse；
Step S3, in depositing a polysilicon layer 3 on coarse polysilicon surface 1；
Step S4, polysilicon layer 3 is planarized.
Using the above scheme, as shown in Figure 1, the restorative procedure of polysilicon surface is suitable for repairing impaired polysilicon surface
During 1, providing one first has the semiconductor structure 2 of impaired polysilicon surface, and polysilicon table is cleaned with acid solution
Face 1, to remove the oxidation film on polysilicon surface 1 and its metal of the attachment of polysilicon surface 1, wherein acid solution is hydrofluoric acid
With the dilute solution of water, the volume ratio of water and hydrofluoric acid is 200:1；
Further, polysilicon surface 1 is handled with alkaline solution, organic impurities and part metals is effectively removed, so that more
Crystal silicon surface 1 is coarse, and wherein alkaline solution is ammonium hydroxide, and the volume ratio of water and ammonia is 50:1；
Further, after step S2, alkaline solution repairs the fringe region of smooth coarse polysilicon surface 1, so
Afterwards chemical machine is finally utilized using the new polysilicon layer 3 of one layer of chemical vapor deposition in coarse polysilicon surface 1
Tool grinding carries out planarization polysilicon layer 3 and is further effectively improved polysilicon surface 1 to improve the flatness of polysilicon layer 3
Border issue between the polysilicon layer 3 of deposition, and then improve the quality of polysilicon surface 1.
In order to illustrate this method, Fig. 2-6 shows the structural schematic diagram in each processing step of this method.
Because exposed among air for a long time in polysilicon, polysilicon surface 1 generates oxidation film by oxidation, or is partly leading
When alarm occurs for body technology board, polysilicon surface remains phosphoric acid, and exposed among air for a long time, polysilicon surface
Semiconductor structure 2 be easily etched, cause the semiconductor structure of polysilicon surface to be damaged, it is to obtain as shown in Fig. 2, impaired
Polysilicon surface 1 structural schematic diagram, profile has changed；
Polysilicon surface is cleaned by acid solution, to remove the oxidation film on polysilicon surface 1 and its metal of attachment,
To obtain as shown in figure 3, the structural schematic diagram of the polysilicon surface 1 after acid solution cleaning treatment；
Polysilicon surface 1 is handled by alkaline solution, organic impurities and part metals are effectively removed, so that polysilicon surface
It is coarse, and the fringe region of smooth coarse polysilicon surface 1 is repaired by alkaline solution after processing, to obtain such as Fig. 4
It is shown, the structural schematic diagram of the polysilicon surface 1 after being handled by alkaline solution；
Deposit one layer of new polysilicon layer 3 in coarse polysilicon surface 1 using chemical vapor deposition method, with obtain as
Shown in Fig. 5, in the structural schematic diagram of impaired 1 redeposited one layer of new polysilicon layer 3 of polysilicon surface；
Using chemical and mechanical grinding method planarize polysilicon layer 3, to improve the flatness of polysilicon layer 3, with obtain as
Shown in Fig. 6, for the structural schematic diagram of the polysilicon layer after planarization, it is further effectively improved polysilicon surface 1 and deposition
Border issue between polysilicon layer 3, and then ground improves the quality of polysilicon surface 1.
For the prior art, the present invention discloses a kind of restorative procedure of polysilicon surface, molten with alkalinity by acid solution
Liquid handles polysilicon surface, and the redeposited polysilicon layer on impaired polysilicon surface, efficiently solves more what is be damaged
There is the bad problem of bonding interface in crystal silicon surface deposit polycrystalline silicon layer, while being effectively improved the border issue between two layers, into
And improve the quality of polysilicon surface.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (8)
1. a kind of restorative procedure of polysilicon surface, during being suitable for repairing impaired polysilicon surface, which is characterized in that
There is provided one has the semiconductor structure of impaired polysilicon surface, further comprising the steps of：
Step S1, the polysilicon surface is cleaned with an acid solution, to remove the oxidation film on the polysilicon surface；
Step S2, the polysilicon surface is handled with an alkaline solution, so that the polysilicon surface is coarse；
Step S3, in depositing a polysilicon layer on the coarse polysilicon surface；
Step S4, the polysilicon layer is planarized.
2. restorative procedure according to claim 1, which is characterized in that in the step S1, the acid solution is hydrogen
The dilute solution of fluoric acid and water.
3. restorative procedure according to claim 2, which is characterized in that the volume ratio of the water and the hydrofluoric acid is 200:
1。
4. restorative procedure according to claim 1, which is characterized in that in the step S2, the alkaline solution is ammonia
Water.
5. restorative procedure according to claim 4, which is characterized in that the volume ratio of the ammonium hydroxide is 50:1.
6. restorative procedure according to claim 1, which is characterized in that after the step S2, the alkaline solution is repaiied
The fringe region of the multiple smooth coarse polysilicon surface.
7. restorative procedure according to claim 1, which is characterized in that in the step S3, utilize chemical vapor deposition
Method is to deposit the polysilicon layer.
8. restorative procedure according to claim 1, which is characterized in that in the step S4, utilize chemical mechanical grinding
Method planarizes the polysilicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810530830.3A CN108735589A (en) | 2018-05-25 | 2018-05-25 | A kind of restorative procedure of polysilicon surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810530830.3A CN108735589A (en) | 2018-05-25 | 2018-05-25 | A kind of restorative procedure of polysilicon surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108735589A true CN108735589A (en) | 2018-11-02 |
Family
ID=63936676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810530830.3A Pending CN108735589A (en) | 2018-05-25 | 2018-05-25 | A kind of restorative procedure of polysilicon surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108735589A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634730A (en) * | 2019-09-27 | 2019-12-31 | 扬州扬杰电子科技股份有限公司 | Method for reworking gate oxide interruption after groove Schottky polysilicon deposition |
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|---|---|---|---|---|
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| US20020115275A1 (en) * | 2001-02-22 | 2002-08-22 | Samsung Electronics Co., Ltd. | Method for forming a dielectric layer of a semiconductor device and a capacitor using the same |
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| CN103745925A (en) * | 2013-11-14 | 2014-04-23 | 上海和辉光电有限公司 | Planarization polysilicon film manufacturing method |
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| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
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2018
- 2018-05-25 CN CN201810530830.3A patent/CN108735589A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| US20020115275A1 (en) * | 2001-02-22 | 2002-08-22 | Samsung Electronics Co., Ltd. | Method for forming a dielectric layer of a semiconductor device and a capacitor using the same |
| CN1455442A (en) * | 2002-04-30 | 2003-11-12 | 中芯国际集成电路制造(上海)有限公司 | Method of forming rough compound crystal silicon layer on upper portion of semiconductor base |
| CN103745925A (en) * | 2013-11-14 | 2014-04-23 | 上海和辉光电有限公司 | Planarization polysilicon film manufacturing method |
| CN104851775A (en) * | 2014-02-13 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing damage on substrate in source/drain region |
| CN105932078A (en) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
Non-Patent Citations (1)
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|---|
| 程灏波，谭汉元: "《先进光学制造工程与技术原理》", 31 December 2013 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110634730A (en) * | 2019-09-27 | 2019-12-31 | 扬州扬杰电子科技股份有限公司 | Method for reworking gate oxide interruption after groove Schottky polysilicon deposition |
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Application publication date: 20181102 |