CN110629205B - Vapor deposition furnace, use method thereof and vapor deposition system - Google Patents
Vapor deposition furnace, use method thereof and vapor deposition system Download PDFInfo
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- CN110629205B CN110629205B CN201911034660.0A CN201911034660A CN110629205B CN 110629205 B CN110629205 B CN 110629205B CN 201911034660 A CN201911034660 A CN 201911034660A CN 110629205 B CN110629205 B CN 110629205B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention discloses a vapor deposition furnace, a using method thereof and a vapor deposition system, wherein the vapor deposition furnace comprises a cover body and a cover plate which are connected with a shaft, a first air passage, a second air passage, a first electrode and a second electrode are arranged on the side wall of the cover body, the first electrode is electrically connected with a conductive workpiece placing rack arranged in the cover body, and the second electrode is electrically connected with a conductive plate which is positioned in the cover body and corresponds to the conductive workpiece placing rack; the cover plate is connected with a turnover driving mechanism which drives the cover plate to rotate around the shaft and is switched between a first state and a second state, wherein the cover plate seals the opening of the cover body and forms a sealing cavity with the cover body in the first state, and the cover plate keeps the opening of the cover body in an open state in the second state. According to the scheme, the cavity is formed by the cover body and the cover plate, the cover body can be turned over relative to the cover body, feeding and discharging operations are conveniently carried out, the microwave generator is not required to be used as an energy source, cost reduction is facilitated, the cover plate can be automatically opened and closed, the efficiency is high, and the operation is easy.
Description
Technical Field
The invention relates to the technical field of vapor deposition, in particular to a vapor deposition furnace, a using method thereof and a vapor deposition system.
Background
Plasma chemical vapor deposition (plasma chemical vapor deposition), PCVD, is a technique for promoting chemical reactions in the surface or near-surface space of a substrate to produce a solid film by activating a reactive gas with a plasma. The basic principle of the plasma chemical vapor deposition technology is that under the action of a high-frequency or direct-current electric field, source gas is ionized to form plasma, low-temperature plasma is used as an energy source, a proper amount of reaction gas is introduced, and the plasma discharge is utilized to activate the reaction gas and realize the chemical vapor deposition technology.
A plasma vapor deposition furnace is a special apparatus for performing plasma vapor deposition, and various vapor deposition apparatuses exist on the market, such as a plasma vapor deposition apparatus disclosed in application No. 201810027210.8, which has a reaction chamber and an isolation chamber 20, and provides an energy source for generating plasma in the reactor through a microwave source reactor 30.
The problem with this construction is that:
1. because the cavity has bilayer structure, lead to the structure that needs a plurality of sealing doors, the structure is complicated to hardly realize the automatic switch of door through automation equipment, when waiting to deposit work piece material loading machine to accomplish the unloading of deposit work piece, the operation is comparatively loaded down with trivial details.
2. The microwave source reactor has higher cost, which is not beneficial to reducing the equipment cost.
3. In the structure, only one or a small number of workpieces can be placed on the sample table, so that batch deposition cannot be performed, and in addition, when the workpieces are deposited, the contact area between the sample table and the workpieces is large, and for the workpieces needing full-surface deposition, the products are often difficult to obtain by one-time deposition, and the efficiency is not improved and the film deposition quality is guaranteed by multiple depositions.
4. The whole structure is complex, and is not beneficial to popularization and application.
Disclosure of Invention
The present invention is directed to a vapor deposition furnace, a method for using the same, and a vapor deposition system for solving the above problems in the prior art.
The aim of the invention is achieved by the following technical scheme:
the vapor deposition furnace comprises a cover body and a cover plate which are connected with a shaft,
the side wall of the cover body is provided with a first air passage, a second air passage, a first electrode and a second electrode, wherein the first electrode and the second electrode are used for connecting a power supply, the first electrode is electrically connected with a conductive workpiece placing rack arranged in the cover body in a supporting manner, and the second electrode is electrically connected with a conductive plate which is arranged in the cover body and corresponds to the conductive workpiece placing rack in position;
the cover plate is connected with a turnover driving mechanism which drives the cover plate to rotate around the shaft and is switched between a first state and a second state, wherein in the first state, the cover plate seals the opening of the cover body and forms a sealing cavity with the cover body, and in the second state, the cover plate enables the opening of the cover body to be kept in an open state.
Preferably, in the vapor deposition furnace, a sealing ring is clamped at the end face of the opening end of the cover body.
Preferably, in the vapor deposition furnace, the first air passage and the second air passage are arranged on two opposite side plates of the cover body, the first air passage and the second air passage both comprise air holes which extend inwards from the outer surface of the side plate and are smaller than the thickness of the side plate, the inner ends of the air holes are communicated with a kidney-shaped groove formed in the inner wall of the side plate, a gas homogenizing plate which keeps a gap with the inner ends of the air holes is covered at the notch of the kidney-shaped groove, and a group of small air holes are formed in the gas homogenizing plate.
Preferably, in the vapor deposition furnace, the first electrode and the second electrode are wrapped in an insulating sleeve arranged on the bottom plate in a sealing manner and an insulating cap connected with the insulating sleeve, and the insulating cap is positioned outside the cover body and is provided with a routing channel extending from the outer wall of the insulating cap to the positions of the first electrode and the second electrode.
Preferably, in the vapor deposition furnace, the inner end of the first electrode is connected with the conductive workpiece placing frame through a conductive piece buried on the insulating support.
Preferably, in the vapor deposition furnace, the conductive workpiece placement frame comprises a rectangular frame, a group of cross bars and/or vertical bars are arranged in the frame, and a row of workpiece hooks are arranged on the cross bars and/or the vertical bars.
Preferably, in the vapor deposition furnace, an observation window is disposed on the cover plate.
Preferably, in the vapor deposition furnace, the overturning driving mechanism comprises a telescopic device, a telescopic end of the telescopic device is pivotally connected with one end of a transmission rod, the other end of the transmission rod is fixedly connected with the shaft, and two ends of the shaft are respectively connected with the bottom of the cover plate through swing arms.
The application method of the vapor deposition furnace comprises the following steps:
s1, providing any one of the vapor deposition furnaces;
s2, starting the overturning driving mechanism, opening the cover plate to open the opening of the cover body,
s3, fixing the conductive workpiece placing frame on an insulating support in the cover body to be connected with the first electrode, hanging a group of workpieces to be deposited on the conductive workpiece placing frame or hanging the workpieces to be deposited on the conductive workpiece placing frame, and fixing the conductive workpiece placing frame on the insulating support in the cover body to be connected with the first electrode;
s4, starting the overturning driving mechanism to enable the cover plate to be in sealing connection with the cover body, and finishing feeding.
The vapor deposition system comprises a discharge power supply, a gas supply device, a vacuumizing and exhausting device and is characterized in that: the vacuum deposition device further comprises any one of the vapor deposition furnaces, wherein the vapor deposition furnaces are connected with the discharge power supply, the air supply device and the vacuumizing and exhausting device.
The technical scheme of the invention has the advantages that:
the technical scheme is exquisite in design, the whole structure is simple and compact, the cover body and the cover plate form a cavity, the cover body can be turned over relative to the cover body, the structure of a door for entering and exiting of the conventional cylindrical cavity can be omitted, feeding and discharging operations are greatly facilitated, a microwave generator is not required to be used as an energy source, cost reduction is facilitated, the cover plate is driven by the turning driving mechanism, the cover plate can be automatically opened and closed, the efficiency is high, and the operation is easy.
The first air flue and the second air flue of this scheme's simple structure can the even distribution of effectual assurance gas each region in the cavity to venthole position is relative with work piece position, can improve deposition efficiency, guarantees the homogeneity of deposit and the uniformity of deposit coating. Meanwhile, the air holes can effectively improve the air inlet and outlet efficiency and reduce the time.
The electrode of this scheme simple structure easily equipment and realization, and can effectually carry out insulating parcel to the electrode, avoid the electrode to leak outward, very big improvement the security of equipment.
The conductive workpiece placing rack is simple in structure, can realize batch deposition of a plurality of workpieces, is particularly suitable for annular small workpieces, is extremely small in contact area between the conductive workpiece placing rack and the workpieces, and can not shade the outer surface of the workpieces to be deposited, so that disposable deposition can be realized, the efficiency is high, and the consistency of a deposited film layer is easy to guarantee.
The sealing structure of this scheme is simple, and inlet and outlet structure is few, very big reduction sealed degree of difficulty, be favorable to guaranteeing the leakproofness of structure.
According to the processing method, plasma cleaning can be performed on the surface of the workpiece through the vapor deposition system, so that the cleanliness of the surface of the workpiece is guaranteed, the surface activity of the workpiece is improved, a corrosion-resistant polyethylene film is further formed on the surface of the workpiece, the wear resistance of the workpiece can be greatly improved, and the processing method is particularly suitable for processing the workpiece with high surface corrosion resistance requirements.
And the whole process is carried out in a vapor deposition system, the operation process is simple and easy to realize, and meanwhile, the batch processing can be realized, and the efficiency is high.
Drawings
FIG. 1 is a perspective view of the right side view of the present invention;
FIG. 2 is a longitudinal cross-sectional view of the present invention;
FIG. 3 is a cross-sectional view of a cover region of the present invention;
FIG. 4 is a longitudinal cross-sectional view from the left side of the present invention;
FIG. 5 is a perspective view of the left side view of the present invention;
FIG. 6 is an enlarged view of area A of FIG. 2;
FIG. 7 is a side view of the present invention;
FIG. 8 is an enlarged view of region B of FIG. 4;
FIG. 9 is a cross-sectional view of the conductive member;
fig. 10 is a perspective view of the lower insulating support;
FIG. 11 is a side view of a vapor deposition system of the present invention;
fig. 12 is a front view of the vapor deposition system of the present invention.
Detailed Description
The objects, advantages and features of the present invention are illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of the technical scheme of the invention, and all technical schemes formed by adopting equivalent substitution or equivalent transformation fall within the scope of the invention.
In the description of the embodiments, it should be noted that the positional or positional relationship indicated by the terms such as "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in the specific orientation, and thus are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the scheme, the direction approaching the operator is the near end, and the direction separating from the operator is the far end, with reference to the operator.
The vapor deposition furnace disclosed by the invention is described below with reference to the accompanying drawings, can be used for coating various small annular parts, and comprises a cover body 1 and a cover plate 2, which are connected with a shaft 3,
the side wall of the cover body 1 is provided with a first air passage 4, a second air passage 5, a first electrode 6 and a second electrode 7 for connecting a power supply, the first electrode 6 is electrically connected with a conductive workpiece placing frame 8 arranged in the cover body 1, and the second electrode 7 is electrically connected with a conductive plate 9 which is arranged in the cover body 1 and corresponds to the conductive workpiece placing frame 8 in position.
The cover plate 2 is connected with a turnover driving mechanism 10 which drives the turnover driving mechanism to rotate around the shaft 3 and is switched between a first state and a second state, wherein the cover plate 2 seals the opening of the cover body 1 and forms a sealing cavity with the cover body 1 in the first state, and the cover plate 2 keeps the opening of the cover body 1 in an open state in the second state.
In detail, as shown in fig. 1, the cover 1 is a cover with a rectangular longitudinal section with rounded corners, and of course, the cover may have other shapes, for example, the longitudinal section may be a regular shape such as a circle or a regular polygon; the bottom of the bottom side plate 14 of the cover body 1 is provided with two pivot connecting blocks 15, the pivot connecting blocks 15 and the shaft 3 are pivoted to each other, for example, the shaft 3 can be connected with the pivot connecting blocks through two bearings (not shown in the figure), and the position of the cover body 1 is fixed when the cover is used, so that the cover plate 2 can be driven to turn through the rotating shaft 3 when the cover is in operation.
As shown in fig. 1, a sealing ring 20 is clamped at the end face 11 of the opening end of the cover body 1, and when the cover plate 2 covers the opening end of the cover body 1, the surface of the cover plate is tightly attached to the sealing ring 20, so that sealing is realized. The seal ring 20 may be any feasible seal ring with any feasible material and shape, for example, it may be fluororubber, nitrile rubber, silica gel, ethylene propylene rubber, bifluoride rubber, etc., preferably it may be silica gel, the silica gel is softer than the other materials mentioned above, and can better adhere to the cover plate 2, avoiding the occurrence of gaps, and ensuring the tightness; meanwhile, the two sides of the sealing ring 20 may be formed with wavy lines, and one side of the sealing ring may be clamped in a clamping groove at the end face 11 of the cover body 1, or may be attached to the clamping groove by glue, and the cover plate 2 is formed with a wavy groove matched with the wavy side of the sealing ring, so that the sealing performance may be further improved.
As shown in fig. 3, the first air duct 4 and the second air duct 5 are disposed on two opposite side plates 12 of the cover 1, one of them is used for supplying reaction gas, stable gas, etc. into the cavity when the cover 1 and the cover 2 are sealed to form the cavity, and the other is used for exhausting the gas in the cavity to the outside of the cavity when the cover 1 and the cover 2 are sealed to form the cavity.
In order to ensure uniformity of gas supply, the gas concentration and the local area of the cavity are prevented from influencing the deposition rate and the deposition quality of the workpiece in the area with less reaction gas, as shown in fig. 3 and fig. 4, the first gas channel 4 and the second gas channel 5 each comprise gas holes 41 and 51 which extend inwards from the outer surface of the side plate 12 and have a length smaller than the thickness of the side plate, the inner ends of the gas holes 41 and 51 are communicated with waist-shaped grooves 42 and 52 formed at the inner wall of the side plate 12, the two ends of the waist-shaped grooves 42 and 52 extend to a length equivalent to the length of the area where the workpiece to be deposited can be placed at the notch of the conductive workpiece placing frame 8, and the notch of the waist-shaped grooves 42 and 52 is sealed with gas homogenizing plates 43 and 53 which keep a gap with the inner ends of the gas holes 41 and 51, a group of small gas holes 44 and 54 are formed on the gas homogenizing plates 43 and 53, the small gas holes 44 and 54 are equivalent to the length of the area where the workpiece to be deposited can be placed at the notch of the waist-shaped grooves 42 and 52, so that the reaction gas can be blown to the deposition rate directly.
As shown in fig. 3 and 5, the gas homogenizing plates 43 and 53 are fixed in kidney-shaped mounting grooves 45 and 55 formed on the inner wall of the side plate 12 and surrounding the outer sides of the kidney-shaped grooves 42 and 52, and the thickness of the gas homogenizing plates 43 and 53 is consistent with the depth of the kidney-shaped mounting grooves 45 and 55, so that the outer surfaces of the gas homogenizing plates 43 and 53 are flush with the inner surface of the side plate 12.
As shown in fig. 6, the first electrode 6 and the second electrode 7 are wrapped in insulating sleeves 61, 71 sealingly provided on the bottom plate 13 and insulating caps 62, 72 connected to the insulating sleeves 61, 71. The insulating sleeves 61, 71 are respectively and vertically arranged on the bottom plate 13, and the insulating sleeves 61, 71 can be in threaded connection with the bottom plate 13 or can be in plug-in connection with interference fit connection; the insulating sleeves 61, 71 are sealed with the outer wall of the bottom plate 13 by sealing rings 64, 74.
As shown in fig. 6 and 7, the first electrode 6 and the second electrode 7 are respectively inserted into an insulating sleeve 61, 71, and the first electrode 6 and the second electrode 7 can be screwed with the insulating sleeve 61, 71 or connected with each other by interference fit, meanwhile, both ends of the first electrode 6 and the second electrode 7 extend out of the insulating sleeve 61, 71, the connection surfaces between the first electrode 6 and the second electrode 7 and the outer ends of the insulating sleeve 61, 71 are sealed by sealing rings 65, 75, the insulating caps 62, 72 are connected with the outer ends of the insulating sleeve 61, 71 and wrap the outer ends of the first electrode 6 and the second electrode 7, the insulating caps 62, 72 comprise protective covers 621, 721 and top caps 622, 722 connected with the insulating caps, the protective covers 621, 721 are provided with upper cylinders and lower cylinders with diameters larger than those of the upper cylinders, gaps 623 and 623 extending from the upper cylinders to the top areas of the lower cylinders are formed on the protective covers 721, the top caps 621, 723 are connected with the outer ends of the insulating sleeves 61, 71, and the conducting wires are prevented from being exposed out of the first electrode 6 and the second electrode 7 through the outer conductive wires and the outer walls of the insulating sleeves 621, 72.
And, as shown in fig. 1 and 8, the inner end of the first electrode 6 is connected to the conductive workpiece holder 8 through a conductive member 40 buried in the insulating support 30, as shown in fig. 8, the conductive member 40 includes a conductive post 401 connected (such as a screw connection or an interference fit connection or abutting) to the inner end of the first electrode 6, a connection plate 402 perpendicular to the bottom plate 13 is disposed on the outer end of the conductive post 401, at least one conductive pin 403 is disposed on the connection plate 402, an interface 404 clamped with the conductive workpiece holder 8 is formed on the conductive pin 403, and the conductive member 40 is integrally buried in the insulating support 30.
As shown in fig. 9, the insulating support 30 includes a base 301, a through hole 3011 through which the conductive post 401 passes and a notch 3012 are formed on the base 301, the depth of the notch 3012 is greater than the height of the connecting plate 402, an L-shaped cover plate (not shown in the drawing) is covered at the notch 3012, a through hole 3013 through which the conductive pin 403 passes is further formed on the base 301, the through hole 3013 is communicated with a slot 3014 recessed in the top surface of the base 301, the slot bottom of the slot 3014 is located below the through hole 3013, and the slot width of the opening end of the slot 3014 is smaller than the slot width of the inner side of the slot, so that the conductive workpiece placing rack 8 can be limited to a certain extent, and loosening is avoided.
In the above structure, the conductive member 40 and the insulating holder 30 are assembled as one body; of course, in other embodiments, the conductive member 40 may be integrally molded with the insulating support 30.
As shown in fig. 5, the conductive workpiece placement rack 8 includes a rectangular frame 81, a set of cross bars 82 and/or vertical bars are disposed in the frame 81, a row of workpiece hooks 83 are disposed on the cross bars 82 and/or vertical bars, in this embodiment, the cross bars 82 are preferably disposed only with equal gaps, the workpiece hooks 83 are disposed on the cross bars 82 with equal gaps, the workpiece hooks include a support post 831 connected to the cross bars 82 and perpendicular to the bottom plate 13, a steering column 832 connected to the support post 831 and extending toward the bottom plate 14, and a hook post 833 connected to the steering column 831 and extending toward the opening end of the cover body, the length of the hook post 833 is smaller than the length of the support post 831, so that the workpiece to be deposited can be hung on the workpiece hooks 83 for deposition, and meanwhile, since the contact area between the workpiece hooks and the workpiece to be deposited is very small, the shielding of the workpiece to be deposited is greatly reduced, and thus the coverage of the surface deposition layer of the workpiece to be deposited can be effectively ensured.
As shown in fig. 5, a side post 811 perpendicular to the side plate 12 at the lower end of the frame 81 of the conductive workpiece placement frame 8 is inserted into the clamping groove 3014 of the insulating support 30 and is clamped with the interface 404 on the conductive member 40; the side column 812 at the upper end of the frame 81 is clamped into the insulating support 60, the insulating support 60 is provided with a clamping groove 601 corresponding to the side column 812, the width of the notch of the clamping groove 601 can be smaller than the diameter of the side column 812, and the width of the inside of the clamping groove 601 is equal to the diameter of the side column 812, so that stable clamping can be ensured.
As shown in fig. 4, the insulating supports 30 and 60 are respectively fixed on insulating base plates 70 disposed at the inner side surfaces of the bottom plate 13, the conductive plates 9 are fixedly disposed in grooves of the outer surfaces of the insulating base plates 70, the outer surfaces of the conductive plates 70 are flush with or slightly lower than the outer surfaces of the insulating base plates 70, the second electrodes 7 penetrate through the insulating base plates 70 and are electrically connected with the conductive plates 9, and insulating partition plates 80 covering the conductive plates 9 and having both ends extending below the insulating supports 30 and 60 and being fixed are further disposed on the outer surfaces of the insulating base plates 70, so that electric contact between the workpiece and the conductive plates 9 is effectively avoided.
The tilting drive mechanism 10 may be of various known structures, for example, a motor (not shown) is used as a power source, and the shaft 3 is connected by a gear transmission mechanism (not shown) or a transmission mechanism (not shown) formed by a belt and a pulley, so that the shaft 3 rotates.
In a preferred embodiment, as shown in fig. 10, the tilting driving mechanism 10 includes a telescopic device 101, where the telescopic device 101 may be an air cylinder, an electric cylinder, or an oil cylinder, preferably an air cylinder, because the air cylinder may reduce the difficulty of control during use, the telescopic end of the telescopic device 101 (the front end of the piston rod) is pivotally connected to one end of a transmission rod 102, the other end of the transmission rod 102 is fixedly connected to the shaft 3, the connection point between the transmission rod 102 and the telescopic device 101 is lower than the connection point between the transmission rod and the shaft 3, two ends of the shaft 3 are respectively connected to the bottom of the cover plate 2 through a swing arm 103, and the stroke of the transmission rod, the air cylinder and the swing arm 103 satisfy that the cover plate 2 after rotation is tightly attached to a sealing ring at the opening end of the cover body 1.
Further, in order to facilitate the observation of the deposition condition in the cavity during operation, as shown in fig. 2, an observation window 50 is provided on the cover plate 2, the observation window 50 is fixed in a mounting groove on the cover plate 2 through a flange 90, and a seal ring seals between the end surface of the observation window 50 facing the cover plate 2 and the cover plate 2.
Of course, various sensors (not shown in the figure) for measuring parameters such as air pressure and temperature in the cavity can be further disposed in the vapor deposition furnace, and structures such as cooling and heating are all known technologies and are not described in detail herein.
When the vapor deposition furnace is used, the method comprises the following steps:
s1, providing the vapor deposition furnace and a workpiece to be deposited;
s2, a piston rod of an air cylinder of the overturning driving mechanism 10 is retracted, so that the rotating shaft is rotated anticlockwise, the cover plate 2 is driven to rotate and open, and an opening of the cover body 1 is kept in an open state;
s3, at the moment, the conductive workpiece placing frame 8 can be fixed on the insulating supports 30 and 60 in the cover body to be connected with the first electrode, and then a group of workpieces to be deposited are hung on the conductive workpiece placing frame; of course, the workpiece 500 to be deposited can be hung on the conductive workpiece placing frame 8, and then the conductive workpiece placing frame 8 is fixed on the insulating supports 30 and 60 in the cover body to be connected with the first electrode 6, in this way, one group of workpieces can be deposited and the other group of workpieces to be deposited can be placed on the conductive workpiece placing frame 8, and then the workpieces on the conductive workpiece placing frame 8 in the furnace are integrally replaced after being deposited, so that the working beat can be greatly improved, and the deposition efficiency is improved;
and S4, after the feeding is completed, the cylinder of the turnover driving mechanism 10 is started to enable the piston rod of the turnover driving mechanism to extend, the piston rod drives the transmission rod 102 to rotate clockwise around the shaft 3, the shaft 3 rotates clockwise to drive the swing arm 103 to rotate instantly, the cover plate 2 is further driven to rotate towards the opening end of the cover body 1, and after the piston rod extends to the maximum stroke, the cover plate 2 is attached to the sealing ring 20 of the end face 11 of the cover body 1, so that the cavity is sealed.
At this time, deposition may be performed.
The present disclosure further discloses a vapor deposition system, as shown in fig. 11 and 12, including a discharge power source 200, a gas supply device 300, and a vacuum pumping and exhausting device 400, which may be of various known possible structures, and the vapor deposition system further includes the vapor deposition furnace 100, where the vapor deposition furnace 100 is connected to the discharge power source 200, the gas supply device 300, and the vacuum pumping and exhausting device 400.
The discharge power source 200 may be various known power supply devices, such as an intermediate frequency power source, a high frequency power source, or a radio frequency power source, which can output a high voltage and a high duty ratio, and the first electrode 6 and the second electrode 7 of the vapor deposition furnace are connected to the discharge power source 200 through wires, respectively.
As shown in fig. 12, the gas supply device 300 may be a known various gas supply systems, and may include a plurality of branches 301, which are respectively used for delivering different gases, for example, a pipeline for supplying a protective gas (argon, nitrogen, etc.), a pipeline for supplying a reaction gas (a reaction source is selected according to a film layer to be deposited, for example, a reaction gas for depositing silicon nitride), a valve 304 for controlling gas output and a flowmeter for controlling output flow are provided at an output end of each branch, and the branches are connected to a main pipeline 303 through a multi-way joint 302, and the main pipeline 303 is connected to an inlet end of the first gas pipeline 4, where a specific pipeline structure is a known technology and will not be described in detail.
As shown in fig. 12, the vacuumizing and exhausting device 400 includes a main pipe 401 and a plurality of branches 403 connected to the main pipe 401 through a multi-way joint 402, the main pipe 401 is connected to the second air passage 5, the branches at least include a vacuumizing branch and a waste discharging branch, the vacuum branch is connected to a vacuum pump 405, the waste discharging branch can be connected to a waste gas treatment system, and the front end of each branch has an on-off valve 404 for controlling whether the branch is conducted with the main pipe 401, where the specific pipe structure is a known technology and will not be described in detail.
The weather deposition furnace 100, the discharge power supply 200, the air supply device 300, the vacuum pumping and exhausting device 400 are all connected with a control device (not shown in the figure), and the control device controls the operation of the whole system, wherein the control device can be a combination of a PLC and an industrial computer, and the connection structure and the control process of the weather deposition furnace 100, the discharge power supply 200, the air supply device 300, the vacuum pumping and exhausting device 400, which are all connected with the control device, are known technologies, and are not described herein.
The working process of the vapor deposition system of the present embodiment is described below by taking the deposition of an anticorrosive coating on a coil housing as an example, and specifically includes the following processes:
s10, as shown in FIG. 12, performing a deposition preparation operation, specifically including performing the steps S1-S4, and connecting a weather deposition furnace with the discharge power supply 200, the gas supply device 300, and the vacuum pumping and exhausting device 400, wherein the gas source of the gas supply device 300 preferably includes argon and an easily ionized and easily polymerized fluorinated gas, such as ethylene gas; the workpiece 500 to be deposited (coil housing) is cleaned.
S20, the vacuumizing and exhausting device 400 starts vacuumizing the cavity until the vacuum degree in the cavity reaches the preset back vacuum degree thickness.
S30, the gas supply device 300 injects argon into the cavity, and keeps the gas pressure in the cavity in a stable state, and particularly controls the working pressure in the cavity to be between 30 Pa and 100 Pa.
S40, adjusting the discharge power of the power supply to be between 500 and 2000W, turning on the discharge power supply, continuously obtaining enough energy by outer electrons in a single gas molecule under the vibration excitation of an electromagnetic field, generating energy level transition to enable original neutral gas molecules to be converted into charged plasmas, and enabling the inside of the cavity to be in a plasma discharge state, wherein residual organic matters on the surface of a workpiece to be deposited are thoroughly cleaned by the plasmas, and meanwhile, the surface energy of the workpiece to be deposited is improved, so that an activation effect is achieved, and after the discharge power supply continuously works for a period of time, preferably between 3 and 5 minutes, stopping discharge and argon injection.
S50, injecting ethylene gas or other easily ionized and easily polymerized fluorinated gas into the cavity by the gas supply device 300, specifically keeping the working pressure in the cavity between 5 Pa and 50Pa after the gas in the cavity is stable, adjusting the discharge power of the discharge power supply between 200W (watt) and 500W (watt) specifically, turning on the discharge power supply again, and depositing a layer of solid polyethylene film on the surface of a workpiece to be deposited, wherein the working time of the discharge power supply is controlled between 3 min and 10min, and the contact angle of liquid on the surface of the polyethylene film is more than 90 degrees, namely the liquid is lyophobic.
The invention has various embodiments, and all technical schemes formed by equivalent transformation or equivalent transformation fall within the protection scope of the invention.
Claims (6)
1. The vapor deposition furnace is characterized in that: comprises a cover body (1) and a cover plate (2), which are connected with a shaft (3),
the side wall of the cover body (1) is provided with a first air passage (4), a second air passage (5), a first electrode (6) and a second electrode (7) which are used for connecting a power supply, the first electrode (6) is electrically connected with a conductive workpiece placing rack (8) which is arranged in the cover body (1), and the second electrode (7) is electrically connected with a conductive plate (9) which is arranged in the cover body (1) and corresponds to the conductive workpiece placing rack (8);
the cover plate (2) is connected with a turnover driving mechanism (10) which drives the cover plate to rotate around the shaft (3) and is switched between a first state and a second state, the cover plate (2) seals the opening of the cover body (1) and forms a sealing cavity with the cover body (1) in the first state, and the cover plate (2) keeps the opening of the cover body (1) in an open state in the second state;
the first air passage (4) and the second air passage (5) are arranged on two opposite side plates (12) of the mask body (1), the first air passage (4) and the second air passage (5) both comprise air holes (41, 51) which extend inwards from the outer surfaces of the side plates (12) and have lengths smaller than the thickness of the side plates, the inner ends of the air holes (41, 51) are communicated with waist-shaped grooves (42, 52) formed at the inner walls of the side plates, and the extending lengths of the two ends of the waist-shaped grooves (42, 52) are equal to the lengths of areas where the conductive workpiece placing frames (8) can be used for placing workpieces to be deposited; the notch of the kidney-shaped groove (42, 52) is covered with a gas-homogenizing plate (43, 53) which keeps a gap with the inner end of the air hole (41, 51), and a group of small air holes (44, 54) are formed on the gas-homogenizing plate (43, 53);
the first electrode (6) and the second electrode (7) are wrapped in insulating sleeves (61, 71) arranged on the bottom plate (13) in a sealing way and insulating caps (62, 72) connected with the insulating sleeves (61, 71), the insulating caps (62, 72) are positioned outside the cover body, and wiring channels (63, 73) extending to the positions of the first electrode (6) and the second electrode (7) from the outer walls of the insulating caps are formed on the insulating caps;
the inner end of the first electrode (6) is connected with the conductive workpiece placing frame (8) through a conductive piece (40) buried on the insulating support (30);
the conductive workpiece placing rack (8) comprises a rectangular frame (81), a group of cross bars (82) and/or vertical bars are arranged in the frame, and a row of workpiece hooks (83) are arranged on each cross bar (82) and/or vertical bar.
2. The vapor deposition furnace according to claim 1, wherein: a sealing ring (20) is clamped at the end face (11) of the opening end of the cover body (1).
3. The vapor deposition furnace according to claim 1, wherein: an observation window (50) is arranged on the cover plate (2).
4. A vapor deposition furnace according to any one of claims 1-3, characterized in that: the turnover driving mechanism (10) comprises a telescopic device (101), a telescopic end of the telescopic device (101) is pivotally connected with one end of a transmission rod (102), the other end of the transmission rod (102) is fixedly connected with the shaft (3), and two ends of the shaft (3) are respectively connected with the bottom of the cover plate (2) through swing arms (103).
5. The application method of the vapor deposition furnace is characterized in that: the method comprises the following steps:
s1, providing a vapor deposition furnace according to any one of claims 1-4;
s2, starting the overturning driving mechanism (10), opening the cover plate (2) to open the opening of the cover body (1),
s3, fixing the conductive workpiece placing frame (8) on the insulating supports (30, 60) in the cover body to be connected with the first electrode, hanging a group of workpieces to be deposited on the conductive workpiece placing frame or hanging the workpieces to be deposited on the conductive workpiece placing frame (8), and fixing the conductive workpiece placing frame (8) on the insulating supports (30, 60) in the cover body to be connected with the first electrode;
s4, starting the overturning driving mechanism (10) to enable the cover plate (2) to be in sealing connection with the cover body (1), and finishing feeding.
6. The vapor deposition system comprises a discharge power supply (200), a gas supply device (300) and a vacuumizing and exhausting device (400), and is characterized in that: the vapor deposition furnace (100) according to any one of claims 1 to 4, wherein the vapor deposition furnace (100) is connected with the discharge power supply (200), the gas supply device (300) and the vacuumizing and exhausting device (400).
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| TW200403747A (en) * | 2002-04-19 | 2004-03-01 | Nordson Corp | Plasma treatment system |
| CN101319313A (en) * | 2007-06-07 | 2008-12-10 | 财团法人工业技术研究院 | Power transport mechanism and plasma auxiliary chemical vapor deposition apparatus using the same |
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