CN110620163B - Heterojunction solar cell, laminated tile assembly and manufacturing method thereof - Google Patents

Heterojunction solar cell, laminated tile assembly and manufacturing method thereof Download PDF

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CN110620163B
CN110620163B CN201911031421.XA CN201911031421A CN110620163B CN 110620163 B CN110620163 B CN 110620163B CN 201911031421 A CN201911031421 A CN 201911031421A CN 110620163 B CN110620163 B CN 110620163B
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layer
light
solar cell
amorphous silicon
heterojunction solar
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CN110620163A (en
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王秀鹏
王月斌
蒋卫朋
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Tongwei Solar Jintang Co Ltd
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Tongwei Solar Jintang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to a heterojunction solar cell, a shingle assembly, a method of manufacturing a heterojunction solar cell and a method of manufacturing a shingle assembly. The heterojunction solar cell includes a base sheet including a central layer and a plurality of light-transmitting conductive layers, and electrodes disposed on top and bottom surfaces of the base sheet. The plurality of light-transmitting conductive layers are stacked on the top side and the bottom side of the central layer in a direction perpendicular to the central layer, and the light transmittance of each light-transmitting conductive layer increases in a direction from the central layer to the electrode. According to the invention, the conductive transparent area of the solar cell is provided with the plurality of light-transmitting conductive layers with gradually changed light transmittance, and the arrangement can improve the carrier offset rate, light transmittance, conductivity and other aspects of the heterojunction solar cell, avoid the problems of low filling factor and low open-circuit current, and enable the heterojunction solar cell to have higher photoelectric conversion rate.

Description

Heterojunction solar cell, laminated tile assembly and manufacturing method thereof
Technical Field
The invention relates to the field of energy, in particular to a heterojunction solar cell and a laminated tile assembly and a manufacturing method of the heterojunction solar cell and the laminated tile assembly.
Background
With the increase of the consumption speed of conventional fossil energy such as global coal, petroleum, natural gas and the like, the ecological environment is continuously worsened, and particularly, the increasingly serious global climate change is caused by the emission of greenhouse gases, so that the sustainable development of the human society is seriously threatened. The world disputes and establishes respective energy development strategies to cope with the environmental problems caused by the limitation and development and utilization of conventional fossil energy resources. Solar energy has become one of the most important renewable energy sources by virtue of the characteristics of reliability, safety, universality, longevity, environmental protection and resource sufficiency, and is expected to become a main support for future global power supply.
In the new energy source transformation process, the photovoltaic industry in China has grown into a strategic emerging industry with international competitive advantage. However, the development of the photovoltaic industry still faces a plurality of problems and challenges, the conversion efficiency and reliability are the biggest technical obstacles restricting the development of the photovoltaic industry, and the cost control and the scale are also economically restricted.
At present, heterojunction solar cells are known as the next-generation ultra-efficient solar cell technology with the most industrialization potential due to a series of advantages of high conversion efficiency, short manufacturing process flow, silicon wafer flaking, low temperature coefficient, no light attenuation, double-sided power generation, high double-sided rate and the like. However, the heterojunction solar cell technology has certain difficulty if large-scale development is to be realized: on one hand, the manufacturing cost of the heterojunction solar cell is relatively high, on the other hand, when the heterojunction solar cell is packaged by adopting a conventional packaging technology, the stability of the solder strip tension is difficult to control, and the heterojunction solar cell cannot adopt the processes of high-temperature welding and the like of the traditional crystalline silicon cell, and needs a low-temperature welding process and a low-temperature material, so that the packaging process is difficult.
The shingle assembly utilizes the electrical principle of low current and low loss (the power loss of the photovoltaic assembly is in direct proportion to the square of the working current) so that the power loss of the assembly is greatly reduced. And secondly, the power generation is performed by fully utilizing the space between the sheets in the battery assembly, so that the energy density in unit area is high. In addition, the photovoltaic metal welding strip for the conventional assembly is replaced by the conductive adhesive with the elastomer characteristic, and the photovoltaic metal welding strip shows higher series resistance in the whole battery, so that the travel of a current loop of the conductive adhesive is far smaller than that of the conductive adhesive by adopting a welding strip mode, the laminated tile assembly is finally made into an efficient assembly, and meanwhile, the performance of the outdoor application reliability is better than that of the conventional photovoltaic assembly, because the laminated tile assembly avoids stress damage of the metal welding strip to the interconnection position of the battery and other confluence areas. In particular, under the dynamic (load action of wind, snow and other natural world) environment with alternating high and low temperatures, the failure probability of the conventional assembly packaged by adopting metal welding strips is far higher than that of the stacked tile assembly packaged by adopting the battery small pieces after being interconnected and cut by adopting the conductive adhesive of an elastomer.
The current mainstream technology of the shingle assembly uses conductive adhesive to interconnect the cut cells, the conductive adhesive mainly comprises a conductive phase and an adhesive phase. The conductive phase mainly comprises noble metals, such as pure silver particles or particles of silver-coated copper, silver-coated nickel, silver-coated glass and the like, and is used for conducting electricity among solar cells, the particle shape and distribution of the conductive phase are based on the optimal electric conduction, and at present, more flaky or spheroidal combined silver powder with D50 less than 10um level is adopted. The adhesive phase mainly comprises a polymer resin polymer having weather resistance, and acrylic resin, silicone resin, epoxy resin, polyurethane, and the like are generally selected according to adhesive strength and weather resistance stability. In order to achieve lower contact resistance, lower volume resistivity and high adhesion of the conductive adhesive and maintain long-term excellent weather resistance, general conductive adhesive manufacturers can complete the bonding through the design of the conductive phase and the adhesive phase formula, thereby ensuring the performance stability of the laminated tile assembly in the initial stage of environmental erosion test and long-term outdoor practical application.
The foregoing problems are readily resolved if heterojunction solar cells are packaged using shingled technology. The imbrication technology adopts a mode that the conductive adhesive is connected with the battery piece in series, the low temperature and the flexibility of the conductive adhesive and the design of a welding strip are not adopted, and the problems of the tension stability of the welding strip and the low temperature welding can be solved. In addition, the heterojunction solar cell technology can adopt thinner silicon wafers, and when the traditional component packaging technology is adopted, the welding strip is connected with the cell piece in series with great difficulty, and is influenced by mechanical stress and thermal stress, so that the heterojunction cell is easy to break. The stacked tile assembly is connected with the battery piece without using a welding belt, so that the breakage rate in the packaging process can be reduced.
In addition to the above problems, heterojunction solar cells have other problems. The passivation layer and the carrier transport layer used in the conventional heterojunction solar cell are amorphous silicon thin films, and have very poor conductivity, so that a transparent conductive thin film needs to be plated on the amorphous silicon thin films in order to conduct out the emitted electricity. At the same time, in order to increase light transmission, reduce reflection and absorption, the film should have both high light transmittance and anti-reflection properties. The current transparent conductive film material is ITO (indium tin oxide), which cannot meet the requirements of heterojunction batteries. In particular, ITO may, for example, result in lower carrier mobility, poor conductivity, and lower light transmittance, which may result in lower heterojunction cell fill factor and lower short-circuit current, thereby affecting the final photoelectric conversion efficiency.
It is therefore desirable to provide a heterojunction solar cell, a shingle assembly and a method of manufacturing a heterojunction solar cell, a shingle assembly to at least partially address the above-mentioned problems.
Disclosure of Invention
The invention aims to provide a heterojunction solar cell, a shingle assembly, a manufacturing method of the heterojunction solar cell and the shingle assembly, and a plurality of light-transmitting conductive layers with gradually changed light transmittance are arranged in a conductive transparent area of the heterojunction solar cell so as to improve the carrier offset rate, light transmittance, conductivity and the like of the heterojunction solar cell and enable the heterojunction solar cell to have higher photoelectric conversion rate.
According to an aspect of the present invention, there is provided the heterojunction solar cell including a base sheet and electrodes disposed on top and bottom surfaces of the base sheet, the base sheet including:
A center layer;
And a plurality of light-transmitting conductive layers which are stacked in a direction perpendicular to the central layer at the top side and the bottom side of the central layer, and the light transmission of each of which increases in an increasing manner in a direction from the central layer to the electrode.
In one embodiment, the center layer includes a substrate layer and a plurality of amorphous silicon thin film layers stacked in a direction perpendicular to the center layer, the plurality of amorphous silicon thin film layers being located on top and bottom sides of the substrate layer, respectively. In one embodiment, the amorphous silicon thin film layer on the top side of the substrate layer comprises an intrinsic amorphous silicon thin film layer and an N-type amorphous silicon thin film layer on the top side of the intrinsic amorphous silicon thin film layer; the amorphous silicon film layer positioned at the bottom side of the substrate layer comprises an intrinsic amorphous silicon film layer and a P-type amorphous silicon film layer positioned at the bottom side of the intrinsic amorphous silicon film layer.
In one embodiment, the substrate layer is an N-type monocrystalline silicon layer.
In one embodiment, the refractive index of each of the light-transmitting conductive layers gradually decreases in a direction from the center layer to the electrode.
The invention further provides a shingle assembly, which is characterized in that the shingle assembly is formed by connecting heterojunction solar cells according to any one of the schemes in a shingle mode.
In yet another aspect, the present invention provides a method of manufacturing a heterojunction solar cell, the method comprising the steps of manufacturing a heterojunction solar cell whole and breaking the heterojunction solar cell whole, wherein the step of manufacturing the heterojunction solar cell whole further comprises the steps of:
Setting a central layer;
Arranging a plurality of light-transmitting conductive layers on the top side and the bottom side of the central layer, and enabling the light-transmitting conductive layers to be arranged in a stacking manner outwards from the central layer in a manner of increasing light transmittance;
electrodes are applied on the top surface of the topmost light-transmitting conductive layer and on the bottom surface of the bottommost light-transmitting conductive layer.
In one embodiment, the step of disposing the center layer comprises:
setting an N-type monocrystalline silicon layer as a substrate layer;
An intrinsic amorphous silicon film layer is arranged on the top side of the substrate layer, and an N-type amorphous silicon film layer is arranged on the top side of the intrinsic amorphous silicon film layer;
An intrinsic amorphous silicon thin film layer is disposed on the bottom side of the substrate layer and a P-type amorphous silicon thin film layer is disposed on the bottom side of the intrinsic amorphous silicon thin film layer.
In one embodiment, the method further comprises the steps of:
The plurality of light-transmitting conductive layers are manufactured such that the light-transmitting conductive layer having a strong light transmittance has a smaller refractive index for any two of the plurality of light-transmitting conductive layers.
In one embodiment, the plurality of light-transmissive conductive layers are fabricated by selecting different materials and/or different fabrication processes.
In yet another aspect of the invention, a method of manufacturing a shingle assembly is provided, the method comprising the steps of:
manufacturing a heterojunction solar cell according to the method of one of the two schemes;
and sequentially connecting the heterojunction solar cells in a shingle mode.
According to the invention, the conductive transparent area of the solar cell is provided with the plurality of light-transmitting conductive layers with gradually changed light transmittance, and the arrangement can improve the carrier offset rate, light transmittance, conductivity and other aspects of the heterojunction solar cell, avoid the problems of low filling factor and low open-circuit current, and enable the heterojunction solar cell to have higher photoelectric conversion rate. And each light-transmitting conductive layer can also have different refractive indexes, and the refractive indexes of each light-transmitting conductive layer in the direction from the central layer to the electrode are sequentially reduced, so that when light irradiates the solar cell, the light is gradually gathered, the light is prevented from being emitted outwards, the light better enters the absorption layer of the solar cell, and the service efficiency of the solar cell is improved.
Drawings
For a better understanding of the above and other objects, features, advantages and functions of the present invention, reference should be made to the preferred embodiments illustrated in the accompanying drawings. Like reference numerals refer to like parts throughout the drawings. It will be appreciated by persons skilled in the art that the drawings are intended to schematically illustrate preferred embodiments of the invention, and that the scope of the invention is not limited in any way by the drawings, and that the various components are not drawn to scale.
Fig. 1 is a schematic view of a heterojunction solar cell according to a preferred embodiment of the invention.
Detailed Description
Specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings. What has been described herein is merely a preferred embodiment according to the present invention, and other ways of implementing the invention will occur to those skilled in the art on the basis of the preferred embodiment, and are intended to fall within the scope of the invention as well.
The invention provides a heterojunction solar cell, a shingle assembly and a method for manufacturing the heterojunction solar cell and the shingle assembly. Fig. 1 shows a schematic diagram of a heterojunction solar cell according to a preferred embodiment of the invention.
The heterojunction solar cell sheet comprises a base sheet with a positive electrode printed on the top surface and a back electrode printed on the bottom surface, the positive and back electrodes preferably being made of silver. The base sheet further comprises a plurality of battery sheet layers which are arranged in a stacked manner along the direction perpendicular to the base sheet, the battery sheet layers comprise a central layer and a plurality of transparent conductive layers, the central layer is positioned at the central position of all the battery sheet layers, and the transparent conductive layers are arranged in a stacked manner along the direction perpendicular to the central layer at the top side and the bottom side of the central layer.
In order to enable the transparent conductive area of the substrate sheet to have gradual light transmittance, a plurality of materials can be selected and matched with different production processes to respectively manufacture a plurality of transparent conductive layers, so that each transparent conductive layer has light transmittance different from each other. The respective light-transmitting conductive layers are arranged in the order of the intensity of light transmission on the top side and the bottom side of the center layer such that the light transmission of the respective light-transmitting conductive layers increases in the direction from the center layer to the electrode (for example, in the upward and downward directions from the center layer as shown in fig. 1).
Taking each transparent conductive layer located on the top side of the central layer as an example, the transparent conductive layer directly contacting the central layer is referred to as a first transparent conductive layer, the transparent conductive layer directly located on the top side of the first transparent conductive layer is referred to as a second transparent conductive layer, and so on, and the transparent conductive layer located on the top is, for example, an nth transparent conductive layer. The positive electrode of the heterojunction solar cell is applied on the top surface of the nth transparent conductive layer. The light transmittance of each light-transmitting conductive layer increases in the direction from the center layer to the positive electrode, i.e., from the first light-transmitting conductive layer to the nth light-transmitting conductive layer. That is, the first transparent conductive layer has the worst light transmittance, the second transparent conductive layer has a light transmittance higher than that of the first transparent conductive layer, the third transparent conductive layer has a light transmittance higher than that of the N-th transparent conductive layer … … of the second transparent conductive layer, and the N-th transparent conductive layer has the strongest light transmittance.
The light-transmitting conductive layer on the underside of the central layer is similar. The first light-transmitting conductive layer and the second light-transmitting conductive layer … … N-th light-transmitting conductive layer are also sequentially arranged in the direction from the center layer to the back electrode (for example, in the downward direction from the center layer in fig. 1), and the light transmittance from the first light-transmitting conductive layer to the N-th light-transmitting conductive layer increases sequentially.
Of course, since the light transmittance and the conductivity of the conductive material are sometimes inversely related, the conductivity of each light-transmitting conductive layer may be in a decreasing trend in the direction from the center layer to the electrode. That is, the light-transmitting conductive layers located at the very top and very bottom of the base sheet may be slightly less conductive.
More preferably, on the basis of the above, each light-transmitting conductive layer may be further provided such that the refractive index of each light-transmitting conductive layer gradually decreases in a direction from the center layer to the electrode. That is, the refractive index of each light-transmitting conductive layer is inversely related to the light transmittance in the direction from the center layer to the electrode. For example, in fig. 1, for each transparent conductive layer on the top side of the N-type amorphous silicon thin film layer, the refractive index of the first transparent conductive layer is highest, the refractive index of the second transparent conductive layer is next highest, and the refractive index of the nth transparent conductive layer is lowest. The arrangement can gradually gather light when the light irradiates the solar cell, so that the light is prevented from being emitted outwards, the light better enters the absorption layer of the solar cell, and the service efficiency of the solar cell is improved.
Also preferably, the central layer in turn comprises a plurality of layers. For example, the center layer may include a substrate layer made of N-type single crystal silicon and amorphous silicon thin film layers located at the top and bottom sides of the substrate layer, and the amorphous silicon thin film layers may in turn include an intrinsic amorphous silicon thin film layer directly in contact with the substrate layer and an N-type or P-type amorphous silicon thin film layer. In this embodiment, the top side of the intrinsic amorphous silicon thin film layer located on the top side of the substrate layer is an N-type amorphous silicon thin film layer, and the bottom side of the intrinsic amorphous silicon thin film layer located on the bottom side of the substrate layer is a P-type amorphous silicon thin film layer. The light-transmitting conductive layers are sequentially stacked on the top side of the N-type amorphous silicon film layer and the bottom side of the P-type amorphous silicon film layer in the manner described above.
The embodiment also provides a shingle assembly, which is formed by connecting the heterojunction solar cells in a shingle mode.
The present embodiments also provide methods of fabricating heterojunction solar cells and shingle assemblies. The fabrication of heterojunction solar cells is achieved by fabricating the whole heterojunction solar cell and then splitting the whole heterojunction solar cell into a plurality of heterojunction solar cells.
The step of manufacturing the heterojunction solar cell sheet comprises the following steps: setting a central layer; arranging a plurality of light-transmitting conductive layers on the top side and the bottom side of the central layer, and enabling the light-transmitting conductive layers to be arranged in a lamination mode from the central layer outwards in an increasing light transmission mode; electrodes are applied on the top surface of the topmost light-transmitting conductive layer and on the bottom surface of the bottommost light-transmitting conductive layer.
Further, the step of disposing the center layer includes: setting an N-type monocrystalline silicon layer as a substrate layer; providing an intrinsic amorphous silicon thin film layer on the top side of the substrate layer and providing an N-type amorphous silicon thin film layer on the top side of the intrinsic amorphous silicon thin film layer; an intrinsic amorphous silicon thin film layer is disposed at a bottom side of the substrate layer and a P-type amorphous silicon thin film layer is disposed at a bottom side of the intrinsic amorphous silicon thin film layer.
Preferably, in order to make each light-transmitting conductive layer have a decreasing refractive index in a direction from the central layer to the electrode, a step of manufacturing each light-transmitting conductive layer may be added before the above step to manufacture a plurality of light-transmitting conductive layers having light transmittance and refractive index inversely related such that the light-transmitting conductive layer having a higher light transmittance has a smaller refractive index at the same time for any two of such a plurality of light-transmitting conductive layers. The manufacturing method may preferably be implemented by selecting different materials and/or manufacturing processes.
The method for manufacturing the shingle assembly provided by the embodiment comprises the following steps: manufacturing a heterojunction solar cell based on the method; and sequentially connecting the heterojunction solar cells in a shingle mode.
According to the heterojunction solar cell, the shingle assembly and the manufacturing method of the heterojunction solar cell and the shingle assembly, the conductive transparent area of the obtained heterojunction solar cell is provided with the plurality of light-transmitting conductive layers with gradually changed light transmittance, and the arrangement can improve the carrier offset rate, light transmittance, conductivity and other aspects of the heterojunction solar cell, avoid the problems of low filling factor and low breaking current, and enable the heterojunction solar cell to have higher photoelectric conversion rate.
The foregoing description of various embodiments of the invention has been presented for the purpose of illustration to one of ordinary skill in the relevant art. It is not intended that the invention be limited to the exact embodiment disclosed or as illustrated. As described above, many alternatives and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the above teachings. Thus, while some alternative embodiments have been specifically described, those of ordinary skill in the art will understand or relatively easily develop other embodiments. The present invention is intended to embrace all alternatives, modifications and variations of the present invention described herein and other embodiments that fall within the spirit and scope of the invention described above.

Claims (10)

1. A heterojunction solar cell comprising a base sheet and electrodes disposed on top and bottom surfaces of the base sheet, the base sheet comprising: a center layer; and the plurality of light-transmitting conductive layers are arranged on the top side and the bottom side of the central layer in a lamination manner along the direction perpendicular to the central layer, the light transmission of each light-transmitting conductive layer is gradually increased in the direction from the central layer to the electrode, and the refractive index of each light-transmitting conductive layer is gradually reduced.
2. The heterojunction solar cell of claim 1, wherein the central layer comprises a substrate layer and a plurality of amorphous silicon thin film layers stacked in a direction perpendicular to the central layer, the plurality of amorphous silicon thin film layers being located on top and bottom sides of the substrate layer, respectively.
3. The heterojunction solar cell of claim 2, wherein the amorphous silicon thin film layer on the top side of the substrate layer comprises an intrinsic amorphous silicon thin film layer and an N-type amorphous silicon thin film layer on the top side of the intrinsic amorphous silicon thin film layer; the amorphous silicon film layer positioned at the bottom side of the substrate layer comprises an intrinsic amorphous silicon film layer and a P-type amorphous silicon film layer positioned at the bottom side of the intrinsic amorphous silicon film layer.
4. The heterojunction solar cell of claim 2, wherein the substrate layer is an N-type monocrystalline silicon layer.
5. A shingle assembly, characterized in that the shingle assembly is formed by connecting heterojunction solar cells according to any of claims 1-4 in a shingled manner.
6. A method of fabricating a heterojunction solar cell, the method comprising the steps of fabricating a heterojunction solar cell whole and breaking the heterojunction solar cell whole, wherein the step of fabricating the heterojunction solar cell whole further comprises the steps of: setting a central layer; arranging a plurality of light-transmitting conductive layers on the top side and the bottom side of the central layer, and enabling the light-transmitting conductive layers to be arranged in a stacking manner outwards from the central layer in a manner of increasing light transmittance; electrodes are applied on the top surface of the topmost light-transmitting conductive layer and on the bottom surface of the bottommost light-transmitting conductive layer.
7. The method of claim 6, wherein the step of providing a center layer comprises: setting an N-type monocrystalline silicon layer as a substrate layer; an intrinsic amorphous silicon film layer is arranged on the top side of the substrate layer, and an N-type amorphous silicon film layer is arranged on the top side of the intrinsic amorphous silicon film layer; an intrinsic amorphous silicon thin film layer is disposed on the bottom side of the substrate layer and a P-type amorphous silicon thin film layer is disposed on the bottom side of the intrinsic amorphous silicon thin film layer.
8. The method according to claim 6, further comprising the step of: the plurality of light-transmitting conductive layers are manufactured such that the light-transmitting conductive layer having a strong light transmittance has a smaller refractive index for any two of the plurality of light-transmitting conductive layers.
9. The method of claim 8, wherein the plurality of light-transmissive conductive layers are fabricated by selecting different materials and/or different fabrication processes.
10. A method of manufacturing a shingle assembly, the method comprising the steps of: manufacturing a heterojunction solar cell according to the method of any one of claims 6-9; and sequentially connecting the heterojunction solar cells in a shingle mode.
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