CN110620090A - Power converter - Google Patents
Power converter Download PDFInfo
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- CN110620090A CN110620090A CN201910898052.8A CN201910898052A CN110620090A CN 110620090 A CN110620090 A CN 110620090A CN 201910898052 A CN201910898052 A CN 201910898052A CN 110620090 A CN110620090 A CN 110620090A
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- Prior art keywords
- heat dissipation
- groove
- power converter
- flow channel
- terminal
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The application provides a pair of power converter, including radiator and semiconductor assembly, the radiator includes the radiating groove, the radiating groove includes the groove diapire and centers on the groove perisporium that the groove diapire set up, semiconductor assembly includes semiconductor element, semiconductor element includes main part and connecting terminal, the main part include first terminal surface, with the relative second terminal surface that sets up of first terminal surface, and connect first terminal surface with the week side of second terminal surface, connecting terminal locate the second terminal surface, the main part is located in the radiating groove, first terminal surface with the groove bottom wall supports and holds, week side with the groove perisporium supports and holds. The application provides a power converter has solved current power regulation module and has had the problem of the heat dissipation badly because technical limitation exists.
Description
Technical Field
The present application relates to the field of electronic technology, and more particularly, to a power converter.
Background
Insulated Gate Bipolar Transistor (IGBT) is a core device for energy conversion and transmission in the field of power electronic control and new energy automobile control, and is used in many different types of power conditioning modules, and the existing power conditioning modules have a problem of poor heat dissipation due to technical limitations.
Disclosure of Invention
The application provides a power converter, has solved current power regulation module and has had the bad problem of heat dissipation because technical limitation exists.
The application provides a pair of power converter, including radiator and semiconductor assembly, the radiator includes the radiating groove, the radiating groove includes the groove diapire and centers on the groove perisporium that the groove diapire set up, semiconductor assembly includes semiconductor element, semiconductor element includes main part and connecting terminal, the main part include first terminal surface, with the relative second terminal surface that sets up of first terminal surface, and connect first terminal surface with the week side of second terminal surface, connecting terminal locate the second terminal surface, the main part is located in the radiating groove, first terminal surface with the groove bottom wall supports and holds, week side with the groove perisporium supports and holds.
In one embodiment, the second end surface is flush with the opening of the heat dissipation groove, and the connection terminal protrudes from the second end surface.
In one embodiment, the heat dissipation body includes a heat dissipation flow channel, a flow channel inlet and a flow channel outlet, the heat dissipation flow channel is disposed inside the heat dissipation body, the flow channel inlet and the flow channel outlet are disposed on a side surface of the heat dissipation body at an interval, and the flow channel inlet and the flow channel outlet are respectively communicated with two ends of the heat dissipation flow channel.
In one embodiment, the heat dissipation body includes a top surface and a bottom surface that are disposed opposite to each other, the heat dissipation groove is disposed on the top surface, the flow channel inlet is disposed near the bottom surface, and the flow channel outlet is disposed near the top surface.
In one embodiment, a surface of the groove peripheral wall and/or the groove bottom wall facing away from the heat dissipation groove is a flow passage wall surface of the heat dissipation flow passage.
In one embodiment, the semiconductor assembly further includes a connection member connected to the connection terminal of the semiconductor element.
In one embodiment, the connecting member is integrally formed with the connecting terminal.
In one embodiment, the power converter includes a fixing member, the fixing member includes a fixing portion and a pressing portion connected to the fixing portion, the fixing portion is mounted on the heat dissipation body, and the pressing portion covers a part of the opening of the heat dissipation groove to limit the main body in the heat dissipation groove.
In one embodiment, the pressing part is provided with a holding part, and the holding part is used for holding the main body.
In one embodiment, the semiconductor assembly includes a plurality of semiconductor elements, the heat sink includes a plurality of heat dissipation grooves, and the plurality of semiconductor elements are respectively disposed in the corresponding heat dissipation grooves.
The power converter in this application include the radiator with semiconductor module, among the semiconductor module semiconductor component locates the radiator in the radiating groove, just first terminal surface with the tank bottom wall supports and holds, week side with the tank perisporium supports and holds, that is to say, semiconductor component except be equipped with connecting terminal the face not with the cell wall contact of radiating groove, other face all with the cell wall contact of radiating groove, thereby increased semiconductor component with the area of contact of radiating groove has guaranteed semiconductor component's radiating effect.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a power converter according to an embodiment of the present disclosure;
FIG. 2 is an exploded schematic diagram of the power converter provided in FIG. 1;
FIG. 3 is a schematic diagram of a heat sink of the power converter provided in FIG. 1;
FIG. 4 is a schematic cross-sectional view of the heat sink provided in FIG. 3 along the A-A direction;
FIG. 5 is a schematic cross-sectional view of the heat sink provided in FIG. 3 along the B-B direction;
FIG. 6 is a schematic diagram of the structure of the semiconductor device provided in FIG. 1;
FIG. 7 is a schematic view of another angle configuration of the semiconductor device provided in FIG. 6;
fig. 8 is a schematic view of the structure of the fixing member provided in fig. 1.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a power converter 100 according to an embodiment of the present disclosure, and fig. 2 is an exploded structural diagram of the power converter 100 provided in fig. 1. The power converter 100 may be, for example: an ac-dc converter, a dc-ac inverter, an ac-dc-ac converter, etc. The power converter 100 of fig. 1 is illustrated as an ac-dc converter.
The power converter 100 comprises a radiator 10 and a semiconductor assembly 20, the radiator 10 comprises a radiator 11, the radiator 11 comprises a slot bottom wall 111 (fig. 4) and a slot peripheral wall 112 surrounding the slot bottom wall 111, the semiconductor assembly 20 comprises a semiconductor element 21, the semiconductor element 21 comprises a main body 211 and a connecting terminal 212, the main body 211 comprises a first end face 2111, a second end face 2113 opposite to the first end face 2111 and a peripheral side face 2112 connecting the first end face 2111 and the second end face 2113, the connecting terminal is arranged on the second end face 2113, the main body 211 is arranged in the radiator 11, the first end face 2111 abuts against the slot bottom wall 111, and the peripheral side face 2112 abuts against the slot peripheral wall 112. The semiconductor element 21 in this embodiment is an Insulated Gate Bipolar Transistor (IGBT). It is understood that in other embodiments, the semiconductor element 21 may be other semiconductor devices requiring heat dissipation.
In this application among the semiconductor package 20 semiconductor element 21 locates in the radiating groove 11 of radiator 10, just first terminal surface 2111 with groove diapire 111 supports and holds, week side 2112 with groove perisporium 112 supports and holds, that is to say, semiconductor element 21 except the face that is equipped with connecting terminal 212 not with the cell wall contact of radiating groove 11, other face all with the cell wall contact of radiating groove 11, thereby increased semiconductor element 21 with the area of contact of radiating groove 11 has guaranteed semiconductor element 21's radiating effect.
As shown in fig. 3, fig. 3 is a schematic structural diagram of the heat sink 10 of the power converter 100 provided in fig. 1. The heat dissipation body 10 is in a cuboid shape, the heat dissipation body 10 includes a top surface 12, a bottom surface 13 and a side surface 14, the top surface 12 and the bottom surface 13 are oppositely arranged, and the side surface 14 is connected between the top surface 12 and the bottom surface 13. The heat sink 11 is disposed on the top surface 12, that is, the opening of the heat sink 11 and the top surface 12 face in the same direction. When the semiconductor device 21 is disposed in the heat sink 11, the main body 211 is received in the heat sink 11, and the connection terminal 212 extends out of the heat sink 11, so that the connection terminal 212 is electrically connected to other electronic devices in the power converter 100.
In this embodiment, the heat dissipation groove 11 and the main body 211 are both rectangular parallelepiped, and the size of the notch of the heat dissipation groove 11 is adapted to the size of the cross section of the semiconductor device 21 in the thickness direction, so that more heat dissipation grooves 11 can be integrated on the top surface 12 to accommodate more semiconductor devices 21, thereby improving the integration level of the power converter 100. Under the condition of integrating the same number of semiconductor elements 21, compared with the prior art, the integration mode of the power converter 100 of the present application greatly reduces the space volume of the power converter 100, that is, the structural size of the power converter 100 is greatly reduced, and meanwhile, the power density of the power converter 100 is also improved, and the market competitiveness of the product is improved. It is understood that, in other embodiments, the shape of the heat dissipation groove 11 and the shape of the main body 211 may be other shapes such as a cylinder, as long as the groove wall of the heat dissipation groove 11 and the outer surface of the main body 211 contact each other.
In this embodiment, eighteen heat dissipation grooves 11 are provided, and the eighteen heat dissipation grooves 11 are arranged at intervals on the top surface 12 and form a 3 × 6 matrix, so that the heat sink 10 can accommodate eighteen semiconductor elements 21, and the heat sink 10 can integrate a plurality of semiconductor elements 21 on one heat sink 10, thereby ensuring that the space volume of the power converter 100 is sufficiently small and the power density is sufficiently high on the basis of integrating enough semiconductor elements 21. It is understood that, in other embodiments, a plurality of heat dissipation grooves 11 are disposed on the top surface 12, and the number and arrangement of the heat dissipation grooves 11 can be designed according to specific requirements.
Referring to fig. 4 and fig. 5 in combination, fig. 4 is a schematic cross-sectional structure view of the heat sink 10 provided in fig. 3 in a direction a-a. FIG. 5 is a schematic cross-sectional view of the heat sink 10 provided in FIG. 3 along the B-B direction. The heat dissipation body 10 comprises a heat dissipation flow channel 15, a flow channel inlet 16 and a flow channel outlet 17, the heat dissipation flow channel 15 is arranged inside the heat dissipation body 10, the flow channel inlet 16 and the flow channel outlet 17 are arranged on the side surface 14 of the heat dissipation body 10 at intervals, and the flow channel inlet 16 and the flow channel outlet 17 are respectively communicated with two ends of the heat dissipation flow channel 15. The cooling liquid enters the heat dissipation flow channel 15 through the flow channel inlet 16, the heat of the semiconductor element 21 is transferred to the cooling liquid through the heat dissipation groove 11, and the cooling liquid flows out of the flow channel outlet 17, so that the heat is taken out of the heat dissipation body 10, the heat dissipation effect of the semiconductor element 21 is ensured, the electrical property of the power converter 100 is improved, the fault of the power converter 100 caused by poor heat dissipation is reduced, and the service life of the power converter 100 is prolonged.
In this embodiment, the flow channel inlet 16 and the flow channel outlet 17 are respectively disposed on two opposite side surfaces 14 of the heat dissipation body 10 in the length direction. Specifically, the two opposite side surfaces 14 in the length direction of the heat radiator 10 are respectively provided with an extension portion 18 protruding out of the side surface 14, and the flow channel inlet 16 and the flow channel outlet 17 respectively penetrate through the corresponding extension portions 18 to be communicated with the heat radiation flow channel 15. In this embodiment, the extension portion 18 is provided to facilitate stable connection between the heat dissipation body 10 and the pipe of the cooling liquid. It is understood that, in other embodiments, the flow channel inlet 16 and the flow channel outlet 17 are respectively disposed on two opposite side surfaces 14 of the heating body 10 in the width direction. Alternatively, the channel inlets 16 and the channel outlets 17 may be spaced apart from each other on the same side surface 14, or the channel inlets 16 and the channel outlets 17 may be spaced apart from each other on the adjacent side surfaces 14. The side surfaces 14 are not provided with extensions 18, and the flow channel inlet 16 and the flow channel outlet 17 open directly onto their respective side surfaces 14.
As shown in fig. 3, the flow channel inlet 16 is disposed adjacent to the bottom surface 13, the flow channel outlet 17 is disposed adjacent to the top surface 12, that is, the extension part 18 corresponding to the flow path inlet 16 is provided near the bottom surface 13, the extension part 18 corresponding to the flow path outlet 17 is provided near the top surface 12, thereby ensuring that the heat dissipation flow passage 15 is filled with the cooling liquid, in other words, the cooling liquid is lowered into and raised from the heat radiating body 10, ensuring that the flow passage wall surface of the heat dissipation flow passage 15 is sufficiently contacted with the cooling liquid, thereby improving the heat dissipation efficiency, so that the semiconductor element 21 is quickly transferred to the outside through the heat dissipation flow passage 15 after being transferred to the heat dissipation groove 11, therefore, the heat dissipation efficiency of the power converter 100 is ensured, the stability and reliability of the electrical performance of the power converter 100 are improved, and the service life of the power converter 100 is prolonged. It is to be understood that in other embodiments, the positions of the runner inlet 16 and the runner outlet 17 are not limited to the above description.
The length directions of the runner inlet 16 and the runner outlet 17 are the same as the width direction of the heat radiator 10, and the lengths of the runner inlet 16 and the runner outlet 17 are slightly smaller than the width of the heat radiator 10, in other words, two ends of the runner inlet 16 and the runner outlet 17 in the length direction are respectively close to two ends of the side surface 14 corresponding to the two ends in the width direction of the heat radiator 10, so that the lengths of the runner inlet 16 and the runner outlet 17 are sufficiently long, the cooling liquid can be filled in the heat radiation runner 15 better and faster, and the heat radiation performance of the heat radiator 10 is effectively improved. It is understood that in other embodiments, the lengths of the runner inlet 16 and the runner outlet 17 are not limited to the above description.
As shown in fig. 5, in this embodiment, a surface of the groove peripheral wall 112 facing away from the heat dissipation groove 11 is a flow passage wall surface of the heat dissipation flow passage 15. In other words, the heat dissipation flow passage 15 is provided around the groove peripheral wall 112 of each of the heat dissipation grooves 11, that is, the heat dissipation flow channel 15 surrounding one heat dissipation groove 11 is in a shape of "Chinese character hui", and when the heat dissipation flow channel 15 is filled with the coolant, the surface of the groove peripheral wall 112 of the heat dissipation groove 11 facing away from the heat dissipation groove 11 is in direct contact with the coolant sufficiently, so that the heat of the semiconductor element 21 can be directly transferred to the coolant through the groove peripheral wall 112 of the heat dissipation groove 11, and then transferred out of the heating body 10 through the coolant, therefore, heat of the semiconductor element 21 is rapidly transferred to the outside, the heat dissipation efficiency of the heat sink 10 is further improved, the electrical performance of the power converter 100 is guaranteed, the stability, the reliability and the service life of the power converter 100 are improved, the risk of failure of the power converter 100 is greatly reduced, and user experience is improved. It is understood that in other embodiments, the surface of the slot bottom wall 111 facing away from the heat dissipation slot 11 is a flow channel wall surface of the heat dissipation flow channel 15. Or the surfaces of the groove peripheral wall 112 and the groove bottom wall 111 facing away from the heat dissipation groove 11 are both the flow passage wall surfaces of the heat dissipation flow passage 15.
The radiator 10 is strong in universality and simple in forming mode, avoids complex design of the radiating water channel of the conventional power converter 100, greatly reduces the cost of a product part mold and the production and manufacturing cost, and effectively improves the quality reliability and stability of the power converter 100.
Referring to fig. 6, fig. 6 is a schematic structural diagram of the semiconductor device 20 provided in fig. 1. The semiconductor module 20 further includes a connector 22, and the connector 22 is connected to the connection terminal 212 of the semiconductor element 21. Specifically, the connecting element 22 is connected to an end of the connecting terminal 212 away from the main body 211. In this embodiment, the connecting element 22 and the connecting terminal 212 are integrally formed, so that the dependence of the connecting element 22 and the connecting terminal 212 on a high-end welding technology and the requirement of short welding equipment are avoided, the limitation of insufficient domestic advanced welding equipment and high-end welding technology is successfully avoided, the production cost is greatly reduced, and the product volume production and popularization are achieved. It is understood that, in other embodiments, the connection member 22 and the connection terminal 212 of the semiconductor element 21 may be connected by other connection methods such as soldering.
The connection member 22 includes a first connection member 221, a second connection member 222, and a third connection member 223, which are respectively connected to different connection terminals 212 of the semiconductor element 21, so that the different connection terminals 212 of the conductor element are connected to different circuits. The first connecting member 221, the second connecting member 222 and the third connecting member 223 are insulated from each other, so as to prevent unnecessary electrical connection among the first connecting member 221, the second connecting member 222 and the third connecting member 223, which affects circuit conduction.
Referring to fig. 7, fig. 7 is another schematic view of the semiconductor device 20 shown in fig. 6. The second end surface 2113 extends out of the opening of the heat dissipation slot 11, and the connection terminal 212 protrudes out of the second end surface 2113. In this embodiment, the main body 211 further includes grooves 2114, and the grooves 2114 are disposed at four corners of the second end surface 2113, in other words, the four corners of the second end surface 2113 are the grooves 2114 facing the first end surface 2111. A protruding portion 2115 is provided between two recessed grooves 2114 in the longitudinal direction of the second end surface 2113, and the protruding portion 2115 and the recessed grooves 2114 are used for engaging with a fixing member for fixing the semiconductor element 21 in the heat dissipation groove 11 of the radiator 10.
It is understood that, in other embodiments, the four corners of the second end surface 2113 are not provided with the grooves 2114, and the second end surface 2113 is flush with the opening of the heat dissipation slot 11, so that the semiconductor element 21 is sufficiently in contact with the heat dissipation slot 11 to ensure that the heat of the semiconductor element 21 is quickly transferred to the heat dissipation slot 11, the electrical performance of the semiconductor element 21 is ensured, and the stability and reliability of the power converter 100 are effectively improved.
In this embodiment, the connection terminal 212 includes a first connection terminal 2121, a second connection terminal 2122, and a third connection terminal 2123, and the first connection terminal 2121, the second connection terminal, and the third connection terminal 2123 are sequentially disposed on the second end surface 2113 at an interval. The first connection terminal 2121 is electrically connected to the first connector 221, the second connection terminal 2122 is electrically connected to the second connector 222, and the third connection terminal 2123 is electrically connected to the third connector 223. In this embodiment, the first connection terminal 2121 is a gate, the second connection terminal 2122 is a collector, and the third connection terminal 2123 is an emitter. Of course, in other embodiments, the number of the connection terminals 212 is not limited to three, and the connection terminals 212 may be other connection terminals 212 than the gate, collector, and emitter.
In this embodiment, the semiconductor module 20 includes six semiconductor elements 21, the six semiconductor elements 21 are arranged at intervals to form a 3 × 2 matrix, the first connection member 221 is connected to the first connection terminal 2121 of each semiconductor element 21, the second connection member 222 is connected to the second connection terminal 2122 of each semiconductor element 21, and the third connection member 223 is connected to the third connection terminal 2123 of each semiconductor element 21. In the present embodiment, the semiconductor devices 20 are 3 groups, and the main body 211 of each semiconductor element 21 of the three groups of semiconductor devices 20 is disposed in the corresponding heat dissipation groove 11. It is understood that, in other embodiments, the number and the positional relationship of the semiconductor elements 21 in the semiconductor assemblies 20 are not limited to the above description, and the number of the semiconductor assemblies 20 is not limited to three groups, and may be set according to actual needs.
As shown in fig. 2 and 8, fig. 8 is a schematic structural view of the fixing member 30 provided in fig. 1. The power converter 100 includes a fixing member 30, the fixing member 30 includes a fixing portion 31 and a pressing portion 32 connected to the fixing portion 31, the fixing portion 31 is mounted on the heat dissipation body 10, and the pressing portion 32 covers a partial opening of the heat dissipation groove 11, so as to limit the main body 211 in the heat dissipation groove 11, so that the semiconductor element 21 is stably fixed in the heat dissipation groove 11, and it is ensured that the semiconductor element 21 is always in contact with the heat dissipation groove 11 for heat dissipation.
In this embodiment, the fixing members 30 are disposed on two opposite sides of each row of the heat dissipation grooves 11 and cover partial openings of the heat dissipation grooves 11. Specifically, the fixing portion 31 is fixed on the top surface 12 of the heat sink 10 by a screw connection. Two are located to this embodiment fixing piece 30 between radiating groove 11 includes that two are pressed and are held portion 32, and two are pressed and are held portion 32 and locate the relative both sides of fixed part 31, fixed part 31 is located two between the radiating groove 11, two press and hold portion 32 and cover its partial opening that corresponds radiating groove 11 who is listed as respectively, one promptly fixing piece 30 is used for pressing and holds two openings of radiating groove 11, has reduced fixing piece 30's area, also correspondingly reduces two simultaneously distance between the radiating groove 11 has reduced the space volume of radiator 10 greatly, is favorable to power converter 100's miniaturization.
The pressing portion 32 in this embodiment includes a pressing portion 321 and a holding portion 322, the pressing portion 321 is pressed in the groove 2114 of the main body 211, the holding portion 322 is a holding notch, the holding notch is used for holding the protrusion 2115 of the main body 211, so that the pressing portion 32 can not be limited by the main body 211, and cover the opening of the heat dissipation slot 11 as much as possible, and the pressing portion 32 also limits the main body 211, so that the pressing portion 32 more stably limits the semiconductor element 21 in the heat dissipation slot 11.
In this application among the semiconductor package 20 semiconductor element 21 locates in the radiating groove 11 of radiator 10, just first terminal surface 2111 with groove diapire 111 supports and holds, week side 2112 with groove perisporium 112 supports and holds, that is to say, semiconductor element 21 except the face that is equipped with connecting terminal 212 not with the cell wall contact of radiating groove 11, other face all with the cell wall contact of radiating groove 11, thereby increased semiconductor element 21 with the area of contact of radiating groove 11 has guaranteed semiconductor element 21's radiating effect. The cooling liquid is higher than the cooling body 10, and the surfaces of the groove peripheral wall 112 and the groove bottom wall 111 departing from the heat dissipation groove 11 are the flow channel wall surfaces of the heat dissipation flow channel 15, so that the flow channel wall surfaces of the heat dissipation flow channel 15 are ensured to be fully contacted with the cooling liquid, the stability and reliability of the electrical property of the power converter 100 are improved, and the service life of the power converter 100 is prolonged. The size of the notch of the heat dissipation groove 11 is adapted to the size of the cross section of the semiconductor element 21 in the thickness direction, so that more heat dissipation grooves 11 can be integrated on the top surface 12, the integration level of the power converter 100 is improved, the structural size of the power converter 100 is greatly reduced, the power density of the power converter 100 is also improved, and the market competitiveness of the product is improved. The connecting piece 22 and the connecting terminal 212 are integrally formed, so that the dependence of the connecting piece 22 and the connecting terminal 212 on a high-end welding technology and the requirement of short welding equipment are avoided, the production cost is greatly reduced, and the effect of great significance is achieved for mass production and popularization of products.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. The utility model provides a power converter, its characterized in that, power converter includes radiator and semiconductor component, the radiator includes the radiating groove, the radiating groove includes the groove diapire and centers on the groove perisporium that the groove diapire set up, semiconductor component includes semiconductor element, semiconductor element includes main part and connecting terminal, the main part include first terminal surface, with the relative second terminal surface that sets up of first terminal surface, and connect first terminal surface with the week side of second terminal surface, connecting terminal locate the second terminal surface, the main part is located in the radiating groove, first terminal surface with the tank bottom wall supports and holds, week side with the groove perisporium supports and holds.
2. The power converter according to claim 1, wherein the second end surface is flush with the opening of the heat dissipation groove, and the connection terminal protrudes from the second end surface.
3. The power converter according to claim 2, wherein the heat sink includes a heat dissipation flow channel, a flow channel inlet and a flow channel outlet, the heat dissipation flow channel is disposed inside the heat sink, the flow channel inlet and the flow channel outlet are disposed on a side surface of the heat sink at an interval, and the flow channel inlet and the flow channel outlet are respectively communicated with two ends of the heat dissipation flow channel.
4. The power converter according to claim 3, wherein the heat sink includes a top surface and a bottom surface opposite to each other, the heat sink is disposed on the top surface, the flow channel inlet is disposed near the bottom surface, and the flow channel outlet is disposed near the top surface.
5. The power converter according to claim 4, wherein a surface of the groove peripheral wall and/or the groove bottom wall facing away from the heat dissipation groove is a flow passage wall surface of the heat dissipation flow passage.
6. The power converter according to any one of claims 1 to 5, wherein the semiconductor assembly further comprises a connection member connected to a connection terminal of the semiconductor element.
7. The power converter of claim 6, wherein the connecting member is integrally formed with the connecting terminal.
8. The power converter according to any one of claims 1 to 5, wherein the power converter comprises a fixing member, the fixing member comprises a fixing portion and a pressing portion connected to the fixing portion, the fixing portion is mounted on the heat dissipation member, and the pressing portion covers a part of the opening of the heat dissipation groove to limit the main body in the heat dissipation groove.
9. The power converter according to claim 8, wherein the holding portion is provided with a holding portion for holding the main body.
10. The power converter according to claim 1, wherein the semiconductor assembly comprises a plurality of semiconductor elements, the heat spreader comprises a plurality of heat dissipation grooves, and the plurality of semiconductor elements are respectively disposed in the corresponding heat dissipation grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910898052.8A CN110620090A (en) | 2019-09-20 | 2019-09-20 | Power converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910898052.8A CN110620090A (en) | 2019-09-20 | 2019-09-20 | Power converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110620090A true CN110620090A (en) | 2019-12-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910898052.8A Pending CN110620090A (en) | 2019-09-20 | 2019-09-20 | Power converter |
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| CN (1) | CN110620090A (en) |
Citations (5)
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|---|---|---|---|---|
| JP2006147658A (en) * | 2004-11-16 | 2006-06-08 | Yaskawa Electric Corp | Power module |
| CN101594739A (en) * | 2008-05-27 | 2009-12-02 | 华为技术有限公司 | Device embedded circuit board heat abstractor and processing method |
| CN101944546A (en) * | 2010-09-16 | 2011-01-12 | 常熟市冠日新材料有限公司 | Solar photovoltaic module junction box |
| US20130119431A1 (en) * | 2011-11-15 | 2013-05-16 | Koito Manufacturing Co., Ltd. | Light emitting module, method for manufacturing light emitting module, and vehicular lamp |
| CN207743231U (en) * | 2018-01-23 | 2018-08-17 | 深圳市海纳威科技有限公司 | A kind of pliotron with radiator structure |
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2019
- 2019-09-20 CN CN201910898052.8A patent/CN110620090A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006147658A (en) * | 2004-11-16 | 2006-06-08 | Yaskawa Electric Corp | Power module |
| CN101594739A (en) * | 2008-05-27 | 2009-12-02 | 华为技术有限公司 | Device embedded circuit board heat abstractor and processing method |
| CN101944546A (en) * | 2010-09-16 | 2011-01-12 | 常熟市冠日新材料有限公司 | Solar photovoltaic module junction box |
| US20130119431A1 (en) * | 2011-11-15 | 2013-05-16 | Koito Manufacturing Co., Ltd. | Light emitting module, method for manufacturing light emitting module, and vehicular lamp |
| CN207743231U (en) * | 2018-01-23 | 2018-08-17 | 深圳市海纳威科技有限公司 | A kind of pliotron with radiator structure |
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Address after: 1008, Shenye logistics building, No. 2088, Baoan North Road, Sungang street, Luohu District, Shenzhen City, Guangdong Province Applicant after: Baoneng Automobile Group Co., Ltd Address before: 1008, Shenye logistics building, No. 2088, Baoan North Road, Sungang street, Luohu District, Shenzhen City, Guangdong Province Applicant before: BAONENG AUTOMOBILE Co.,Ltd. |
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Effective date of abandoning: 20220517 |