CN110601159A - Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit - Google Patents

Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit Download PDF

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Publication number
CN110601159A
CN110601159A CN201910918792.3A CN201910918792A CN110601159A CN 110601159 A CN110601159 A CN 110601159A CN 201910918792 A CN201910918792 A CN 201910918792A CN 110601159 A CN110601159 A CN 110601159A
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CN
China
Prior art keywords
circuit
electromagnetic pulse
pass filter
radio frequency
transient electromagnetic
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CN201910918792.3A
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Chinese (zh)
Inventor
肖显利
胡见龙
罗小华
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Shenzhen Express Technology Co Ltd
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Shenzhen Express Technology Co Ltd
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Priority to CN201910918792.3A priority Critical patent/CN110601159A/en
Publication of CN110601159A publication Critical patent/CN110601159A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/005Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/006Casings specially adapted for signal processing applications, e.g. CATV, tuner, antennas amplifier
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0066Constructional details of transient suppressor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The invention relates to a radio frequency link strong transient electromagnetic pulse comprehensive protection circuit, which comprises: a parallel resonant response circuit comprising a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1 and a second semiconductor device D2. The invention does not adopt the traditional gas discharge tube and the solid piezoresistor, is easy to reduce the distribution parameters in the radio frequency microwave frequency range, realizes the impedance matching of a radio frequency network, improves the reliability of the comprehensive protection circuit, has good radio frequency performance and environmental temperature adaptability in the effective ultra-wide frequency working bandwidth, can simultaneously complete the inhibiting and absorbing functions of various strong transient electromagnetic pulses and the effective transmission of radio frequency coaxial signals, solves the compatibility problem of various strong transient electromagnetic pulse protection circuits, and obtains the remarkable comprehensive protection effect of various strong transient electromagnetic pulses.

Description

Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit
Technical Field
The invention relates to the field of electromagnetic pulse protection, in particular to a strong transient electromagnetic pulse comprehensive protection circuit for a radio frequency link.
Background
With the wide application of various wireless devices and facilities in industrial and agricultural production, scientific research, foreign air exploration, national defense construction, homeland security defense and other engineering fields, various wireless transceiving systems are placed in complex electromagnetic environments. The wireless transceiving system equipment, particularly the antenna and the coaxial feeder are exposed outside the equipment, so that the equipment is extremely easy to be invaded by various transient electromagnetic pulses in a complex electromagnetic environment, and key sensitive equipment in the system is damaged due to the fact that various transient electromagnetic pulses are introduced into the transceiving system through the antenna and the feeder, and normal work of wireless equipment and the equipment is influenced.
With the development of the electromagnetic pulse technology, the electromagnetic pulse radiation field intensity reaches hundreds of kV/m, the pulse rise time is ns level, and the voltage and the current of the electromagnetic pulse induced on the communication equipment and the like can cause the communication equipment and the like to be instantaneously broken down or burnt; therefore, the electromagnetic pulse not only causes a problem of transient high energy shock but also causes a problem of electromagnetic interference of high frequency and high intensity, and it is necessary to protect the communication electronic device from the strong electromagnetic pulse.
At present, in the field of strong electromagnetic pulse protection, the technology of slow-edge strong electromagnetic pulse (such as thunder electromagnetic pulse) protection is relatively mature, is restricted by principles and device performance, has the problem of short response time in protection, basically loses the protection function for high-energy electromagnetic pulse with short pulse rising edge, and is still in the starting stage for other fast-edge strong electromagnetic pulse (such as nuclear electromagnetic pulse and high-power microwave pulse) protection technologies.
How to implement effective strong electromagnetic pulse comprehensive protection on key equipment on a radio frequency link by using a circuit not only effectively saves the electromagnetic pulse protection cost of the equipment but also improves the protection performance of the equipment, and is a technical problem which is urgently needed to be solved by the strong transient electromagnetic pulse protection of the current radio frequency link.
Disclosure of Invention
The invention aims to provide a radio frequency link strong transient electromagnetic pulse comprehensive protection circuit, which solves the problem that a receiving and transmitting system of wireless equipment and facilities continuously works in extremely complex and severe electromagnetic environments and can effectively prevent the intrusion and damage of various harmful transient strong electromagnetic pulses.
The technical purpose of the invention is realized by the following technical scheme:
a kind of strong transient electromagnetic pulse of radio frequency link synthesizes the protective circuit, including: a parallel resonant response circuit comprising a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1 and a second semiconductor device D2; one end of the first inductive device L1 is connected to one end of the second inductive device L2 and one end of the first capacitive device C1, the other end of the first inductive device L1 is connected to the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded.
By adopting the technical scheme, the parallel resonance response circuit generates a parallel resonance effect on the fast front edge (hereinafter referred to as 'fast edge') transient strong electromagnetic pulse, and the fast edge pulse is restrained in the characteristic clamping voltage range of D1 and D2 directly through L1, D1 and D2, so that the peak of the fast edge strong electromagnetic pulse is effectively restrained, and the energy of the fast edge strong electromagnetic pulse is absorbed and discharged.
The invention is further configured to: the parallel resonance response circuit further comprises a preceding-stage high-pass filter circuit arranged at the preceding stage of the parallel resonance response circuit.
By adopting the technical scheme, the one-way multi-type strong transient electromagnetic pulse comprehensive protection circuit is formed. The preceding-stage high-pass filter circuit directly discharges surge overvoltage induced by the slow-speed leading edge (hereinafter referred to as "slow edge") transient strong electromagnetic pulse to the ground and limits the induced surge overvoltage to a very low potential (lower than 10V), thereby effectively preventing the intrusion and damage of the slow-edge transient strong electromagnetic pulse (such as thunder electromagnetic pulse) to a transceiving system.
The invention is further configured to: the preceding high-pass filter circuit comprises a third inductive device L3 and a third capacitive device C3, wherein one end of the third inductive device L3 is connected to one end of the third capacitive device C3 and serves as an input end of the preceding high-pass filter circuit, the other end of the third capacitive device C3 serves as an output end of the preceding high-pass filter circuit, and the other end of the third inductive device L3 is grounded.
By adopting the technical scheme, the L3 is a structure for restraining the slow-edge strong electromagnetic pulse by directly short-circuiting to the ground, the microsecond-level (us) slow-edge strong electromagnetic pulse (such as the thunder electromagnetic pulse) induced surge pulse voltage forms a short circuit to the ground, the short circuit is limited to a very low potential (lower than 10V), the surge pulse current forms a ground discharge path, and the C3 has an isolation effect on the slow-edge pulse, so that the slow-edge transient strong electromagnetic pulse (such as the thunder electromagnetic pulse) is effectively prevented from intruding and damaging a transceiving system.
The invention is further configured to: the parallel resonance circuit also comprises a post-stage high-pass filter circuit which is arranged at the post stage of the parallel resonance response circuit.
By adopting the technical scheme, the one-way multi-type strong transient electromagnetic pulse comprehensive protection circuit is formed. The backward high-pass filter circuit directly discharges surge overvoltage induced by the slow-speed leading edge (hereinafter referred to as "slow edge") transient strong electromagnetic pulse to the ground and limits the induced surge overvoltage to a very low potential (lower than 10V), thereby effectively preventing the slow-edge transient strong electromagnetic pulse (such as the lightning electromagnetic pulse) from invading and damaging a transceiving system.
The invention is further configured to: the backward high-pass filter circuit comprises a fourth inductive device L4 and a fourth capacitive device C4, wherein one end of the fourth inductive device L4 is connected to one end of the fourth capacitive device C4 and serves as an output end of the backward high-pass filter circuit, the other end of the fourth capacitive device C4 serves as an input end of the backward high-pass filter circuit, and the other end of the fourth inductive device L4 is grounded.
By adopting the technical scheme, the L4 is a structure for restraining the slow-edge strong electromagnetic pulse by directly short-circuiting to the ground, the microsecond-level (us) slow-edge strong electromagnetic pulse (such as the thunder electromagnetic pulse) induced surge pulse voltage forms a short circuit to the ground, the short circuit is limited to a very low potential (lower than 10V), the surge pulse current forms a ground discharge path, and the C4 has an isolation effect on the slow-edge pulse, so that the slow-edge transient strong electromagnetic pulse (such as the thunder electromagnetic pulse) is effectively prevented from intruding and damaging a transceiving system.
The invention is further configured to: the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are all inductors.
By adopting the technical scheme, the inductor has the characteristic of preventing alternating current from passing through and enabling direct current to pass through smoothly, and the higher the frequency is, the higher the coil impedance is; the primary function of the inductor is therefore to form a resonant filter circuit with the capacitor.
The invention is further configured to: the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors.
By adopting the technical scheme, the capacitor has the main function of forming a resonant filter circuit with the inductor.
The invention is further configured to: the first and second semiconductor devices D1 and D2 are semiconductor devices having a fast response.
By adopting the technical scheme, the semiconductor device with quick response forms an energy release path and a pulse peak voltage clamping position for the fast edge strong electromagnetic pulse in nanosecond (ns) level and below, and limits the fast edge pulse peak voltage within an acceptable range.
The invention is further configured to: the semiconductor device with the rapid response is an avalanche diode, a transient voltage suppression diode or a PIN tube.
By adopting the technical scheme, an avalanche diode, a transient voltage suppression diode or a PIN tube is preferably adopted, but the technical scheme is not limited to the avalanche diode, the transient voltage suppression diode or the PIN tube.
The invention is further configured to: the parallel resonance circuit comprises a parallel resonance response circuit, and is characterized by further comprising a front-stage high-pass filter circuit and a rear-stage high-pass filter circuit, wherein the front-stage high-pass filter circuit is arranged at the front stage of the parallel resonance response circuit, and the rear-stage high-pass filter circuit is arranged at the rear stage of the parallel resonance response circuit.
By adopting the technical scheme, the front-stage high-pass filter circuit, the rear-stage high-pass filter circuit and the parallel resonance response circuit form a bidirectional reciprocal protection structure.
In conclusion, the invention has the following beneficial effects:
1. the traditional gas discharge tube and the solid piezoresistor are not adopted, so that the distribution parameters in the radio frequency microwave frequency range are easily reduced, the impedance matching of a radio frequency network is realized, and the reliability of the comprehensive protection circuit is improved;
2. the ultra-wideband antenna has good radio frequency performance and environmental temperature adaptability within an effective ultra-wideband working bandwidth;
3. the suppression and absorption functions of various strong transient electromagnetic pulses and the effective transmission of radio frequency coaxial signals can be simultaneously completed;
4. the problem of compatibility of various strong transient electromagnetic pulse protection circuits is solved, and remarkable comprehensive protection effects of various strong transient electromagnetic pulses are obtained;
5. two ends of the radio frequency transmission line are directly connected with the radio frequency transmission line, so that the radio frequency transmission line is conveniently used for various equipment transceiving equipment, and plays a role in comprehensively protecting key sensitive parts from transient strong electromagnetic pulses.
Drawings
FIG. 1 is a schematic circuit diagram of embodiment 1;
FIG. 2 is a schematic circuit diagram of embodiment 2;
FIG. 3 is a schematic circuit diagram of embodiment 3;
fig. 4 is a circuit schematic diagram of embodiment 4.
In the figure, 1, a parallel resonant response circuit; 2. a preceding-stage high-pass filter circuit; 3. and the post-stage high-pass filter circuit.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Example 1: a strong transient electromagnetic pulse integrated protection circuit for a radio frequency link, as shown in fig. 1, includes: a parallel resonant response circuit comprising a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1 and a second semiconductor device D2; one end of the first inductive device L1 is connected to one end of the second inductive device L2 and one end of the first capacitive device C1 (and is connected to a circuit having a corresponding matching impedance structure to form a radio frequency input structure J2 and a radio frequency output structure J1), the other end of the first inductive device L1 is connected to the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded. And forming a fast-edge strong transient electromagnetic pulse suppression circuit.
Example 2: as shown in fig. 2, the difference from embodiment 1 is that a preceding-stage high-pass filter circuit 2 is further provided in the preceding stage of the parallel resonant response circuit 1.
The front-stage high-pass filter circuit 2 comprises a third inductive device L3 and a third capacitive device C3, wherein one end of the third inductive device L3 is connected to one end of the third capacitive device C3 and serves as an input end of the front-stage high-pass filter circuit (a radio frequency input structure J2 is formed by connecting a circuit with a corresponding matching impedance structure), the other end of the third capacitive device C3 serves as an output end of the front-stage high-pass filter circuit, and the other end of the third inductive device L3 is grounded. Form a unidirectional multi-type strong transient electromagnetic pulse comprehensive protection circuit.
Example 3: as shown in fig. 3, the difference from embodiment 1 is that a post-stage high-pass filter circuit 3 is further included, and is provided at the post-stage of the parallel resonant response circuit 1.
The backward high-pass filter circuit 3 includes a fourth inductive device L4 and a fourth capacitive device C4, one end of the fourth inductive device L4 is connected to one end of the fourth capacitive device C4 and serves as an output end of the backward high-pass filter circuit (a radio frequency output structure J1 is formed by connecting a circuit with a corresponding matched impedance structure), the other end of the fourth capacitive device C4 serves as an input end of the backward high-pass filter circuit, and the other end of the fourth inductive device L4 is grounded. Form a unidirectional multi-type strong transient electromagnetic pulse comprehensive protection circuit.
Preferably, the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are all inductors; the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors; the first and second semiconductor devices D1 and D2 are semiconductor devices having a fast response; the semiconductor device with fast response is an avalanche diode, a transient voltage suppression diode or a PIN tube, but is not limited to these types.
Example 4: a strong transient electromagnetic pulse integrated protection circuit for a radio frequency link, as shown in fig. 4, includes: the filter comprises a parallel resonance response circuit 1, a front-stage high-pass filter circuit 2 and a rear-stage high-pass filter circuit 3, wherein the parallel resonance response circuit 1 is respectively connected with the front-stage high-pass filter circuit 2 and the rear-stage high-pass filter circuit 3 to form a bidirectional reciprocity protection structure.
The parallel resonant response circuit 1 comprises a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1 and a second semiconductor device D2; the front-stage high-pass filter circuit 2 comprises a third inductive device L3 and a third capacitive device C3; the post high pass filter circuit 3 comprises a fourth inductive device L4 and a fourth capacitive device C4.
One end of the third inductive device L3 is connected to one end of the third capacitive device C3 and serves as the input end of the preceding high-pass filter circuit 2, the other end of the third capacitive device C3 serves as the output end of the preceding high-pass filter circuit 2, and the other end of the third inductive device L3 is grounded; the input end of the preceding-stage high-pass filter circuit 2 is connected with a circuit with a corresponding matched impedance structure to form a radio frequency input structure J2.
One end of the fourth inductive device L4 is connected to one end of the fourth capacitive device C4 and serves as the output end of the backward high-pass filter circuit 3, the other end of the fourth capacitive device C4 serves as the input end of the backward high-pass filter circuit 3, and the other end of the fourth inductive device L4 is grounded; the output end of the post-stage high-pass filter circuit 3 is connected with a circuit with a corresponding matched impedance structure to form a radio frequency output structure J1.
One end of the first inductive device L1 is connected to one end of the second inductive device L2 and one end of the first capacitive device C1, and is connected to the output end of the preceding high-pass filter circuit 2 and the input end of the subsequent high-pass filter circuit 3, the other end of the first inductive device L1 is connected to the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded.
Preferably, the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are all inductors; the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors; the first and second semiconductor devices D1 and D2 are semiconductor devices having a fast response; the semiconductor device with fast response is an avalanche diode, a transient voltage suppression diode or a PIN tube, but is not limited to these types.
In the invention, all LC devices are matched with each other to form various frequency bandwidths, and the intermediate-stage parallel resonance network has no influence on the working frequency band and the radio frequency parameters of the whole circuit. The traditional surge absorption devices such as a discharge tube and a piezoresistor are not adopted, and only passive devices such as an inductor L, a capacitor C and a quick response semiconductor device are adopted, so that the effect of comprehensive protection of various strong transient electromagnetic pulses is achieved. The two ends of the circuit are directly connected with the radio frequency transmission line, so that the circuit is conveniently used for various equipment transceiving equipment, and plays a role in comprehensively protecting key sensitive parts from transient strong electromagnetic pulses.
The two-stage high-pass filter LC circuit consists of L3, C3, L4 and C4, is symmetrically distributed with L2 to form a two-stage pi-pi.
L2, L3 and L4 are short-circuited to the ground directly to form a slow-edge strong electromagnetic pulse suppression structure, and surge over-current induced by the slow-edge transient strong electromagnetic pulse is discharged to the ground directly and limited to a very low potential (below 10V), so that the transceiver system is effectively prevented from being invaded and damaged by the slow-edge transient strong electromagnetic pulse (such as a lightning electromagnetic pulse). The two-stage high-pass LC filter and the middle parallel resonance circuit form a symmetrical reciprocal circuit structure, and can effectively play the comprehensive suppression and protection role of various fast-edge and slow-edge strong electromagnetic pulses by cooperative work.
The invention has reconstruction function, for example, the middle resonance level L1, C1, C2, D1 and D2 circuits are removed to form a two-stage cascade slow-edge strong transient electromagnetic pulse suppression circuit; or only L3& C3& L2 and L4& C4& L2 are reserved to form a symmetrical reciprocal slow-edge strong transient electromagnetic pulse suppression circuit; or the fast-edge strong transient electromagnetic pulse suppression circuit is formed by removing the symmetric pi-shaped Pi-shaped high-pass filter circuits L3& C3 and L4& C4 on two sides; or any LC high-pass filter circuit L3& C3 or L4& C4 is removed to form a one-way multi-type strong transient electromagnetic pulse comprehensive protection circuit; or only L3& C3 or L4& C4 is reserved to form a unidirectional slow-edge strong transient electromagnetic pulse protection circuit.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the present invention.

Claims (10)

1. A kind of strong transient electromagnetic pulse of radio frequency link synthesizes the protective circuit, characterized by, including: a parallel resonant response circuit comprising a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1 and a second semiconductor device D2; one end of the first inductive device L1 is connected to one end of the second inductive device L2 and one end of the first capacitive device C1, the other end of the first inductive device L1 is connected to the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded.
2. The rf link strong transient electromagnetic pulse integrated protection circuit of claim 1, wherein: the parallel resonance response circuit further comprises a preceding-stage high-pass filter circuit arranged at the preceding stage of the parallel resonance response circuit.
3. The rf link strong transient electromagnetic pulse integrated protection circuit of claim 2, wherein: the preceding high-pass filter circuit comprises a third inductive device L3 and a third capacitive device C3, wherein one end of the third inductive device L3 is connected to one end of the third capacitive device C3 and serves as an input end of the preceding high-pass filter circuit, the other end of the third capacitive device C3 serves as an output end of the preceding high-pass filter circuit, and the other end of the third inductive device L3 is grounded.
4. The rf link strong transient electromagnetic pulse integrated protection circuit of claim 1, wherein: the parallel resonance circuit also comprises a post-stage high-pass filter circuit which is arranged at the post stage of the parallel resonance response circuit.
5. The integrated protection circuit for strong transient electromagnetic pulse of radio frequency link according to claim 4, wherein: the backward high-pass filter circuit comprises a fourth inductive device L4 and a fourth capacitive device C4, wherein one end of the fourth inductive device L4 is connected to one end of the fourth capacitive device C4 and serves as an output end of the backward high-pass filter circuit, the other end of the fourth capacitive device C4 serves as an input end of the backward high-pass filter circuit, and the other end of the fourth inductive device L4 is grounded.
6. The integrated protection circuit for strong transient electromagnetic pulse of radio frequency link according to any of claims 1-5, characterized by: the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are all inductors.
7. The integrated protection circuit for strong transient electromagnetic pulse of radio frequency link according to any of claims 1-5, characterized by: the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors.
8. The integrated protection circuit for strong transient electromagnetic pulse of radio frequency link according to any of claims 1-5, characterized by: the first and second semiconductor devices D1 and D2 are semiconductor devices having a fast response.
9. The rf link strong transient electromagnetic pulse integrated protection circuit of claim 8, wherein: the semiconductor device with the rapid response is an avalanche diode, a transient voltage suppression diode or a PIN tube.
10. The rf link strong transient electromagnetic pulse integrated protection circuit of claim 1, wherein: the parallel resonance circuit comprises a parallel resonance response circuit, and is characterized by further comprising a front-stage high-pass filter circuit and a rear-stage high-pass filter circuit, wherein the front-stage high-pass filter circuit is arranged at the front stage of the parallel resonance response circuit, and the rear-stage high-pass filter circuit is arranged at the rear stage of the parallel resonance response circuit.
CN201910918792.3A 2019-09-26 2019-09-26 Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit Pending CN110601159A (en)

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Application Number Priority Date Filing Date Title
CN201910918792.3A CN110601159A (en) 2019-09-26 2019-09-26 Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115225043A (en) * 2022-07-27 2022-10-21 中国民航大学 Electromagnetic protection circuit for low-noise amplifier of Beidou receiver

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CN103795053A (en) * 2014-02-25 2014-05-14 中国人民解放军理工大学 Novel lightning protection device for antenna port
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US20150146336A1 (en) * 2013-11-26 2015-05-28 Thomson Licensing Surge protector for a transmission line connector
CN210246313U (en) * 2019-09-26 2020-04-03 深圳市速联技术有限公司 Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044883A (en) * 1999-07-29 2001-02-16 Murata Mfg Co Ltd High frequency switching component
JP2002171149A (en) * 2000-11-30 2002-06-14 Harison Toshiba Lighting Corp Variable attenuator
JP2003273687A (en) * 2002-03-18 2003-09-26 Hitachi Metals Ltd High-pass filter, multi-band antenna switch circuit using the same, multi-band antenna switch lamination module, and communication device
US20110242719A1 (en) * 2008-06-06 2011-10-06 Liann-Be Chang Cascade electromagnetic pulse protection circuit for high frequency application
US20140211348A1 (en) * 2013-01-29 2014-07-31 Citruscom Corporation Ic emi filter with esd protection incorporating lc resonance tanks for rejection enhancement
US20150146336A1 (en) * 2013-11-26 2015-05-28 Thomson Licensing Surge protector for a transmission line connector
CN103795053A (en) * 2014-02-25 2014-05-14 中国人民解放军理工大学 Novel lightning protection device for antenna port
CN210246313U (en) * 2019-09-26 2020-04-03 深圳市速联技术有限公司 Radio frequency link strong transient electromagnetic pulse comprehensive protection circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115225043A (en) * 2022-07-27 2022-10-21 中国民航大学 Electromagnetic protection circuit for low-noise amplifier of Beidou receiver

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