CN110600594A - Silicon carbide epitaxial substrate - Google Patents
Silicon carbide epitaxial substrate Download PDFInfo
- Publication number
- CN110600594A CN110600594A CN201910894556.2A CN201910894556A CN110600594A CN 110600594 A CN110600594 A CN 110600594A CN 201910894556 A CN201910894556 A CN 201910894556A CN 110600594 A CN110600594 A CN 110600594A
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- CN
- China
- Prior art keywords
- silicon carbide
- layer
- epitaxial
- substrate
- carbide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 63
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 19
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000005411 Van der Waals force Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011335 coal coke Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002006 petroleum coke Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a silicon carbide epitaxial substrate, relates to the technical field of epitaxial substrates, and mainly aims to solve the problem that a silicon carbide epitaxial layer has more dislocation defects; the epitaxial substrate comprises a base, wherein the upper part of the base is provided with a patterned silicon carbide layer which can be epitaxially grown, a plurality of microstructures are arranged on the upper side of the silicon carbide layer, each microstructure comprises a protruding part arranged on the silicon carbide layer and a recessed part formed between two adjacent protruding parts, and a carbon nanotube layer is attached to the inner side of each recessed part. The substrate in the epitaxial substrate has a patterned growth surface, and the patterned surface has a plurality of micron-sized microstructures, so that dislocation defects in the epitaxial growth process can be reduced, the epitaxial growth surface of the silicon carbide layer grows, the contact area between the epitaxially grown silicon carbide layer and the substrate is reduced, the stress between the silicon carbide layer and the substrate in the growth process is reduced, and the quality of the epitaxial silicon carbide layer can be further improved.
Description
Technical Field
The invention relates to the technical field of epitaxial substrates, in particular to a silicon carbide epitaxial substrate.
Background
Carborundum, also known as silicon carbide, is produced by high-temperature smelting of quartz sand, petroleum coke (or coal coke), wood dust (salt is required for producing green silicon carbide), etc. in a resistance furnace. Silicon carbide also has a rare mineral in nature, morusite. Silicon carbide is also known as carbo-silica. In the modern C, N, B and other non-oxide high-tech refractory raw materials, silicon carbide is the most widely and economically used one, and may be named as corundum or refractory sand, because of its chemical stability, high heat conductivity, small thermal expansion coefficient and good wear resistance, it has many other uses besides being used as abrasive, and it is also used in great amount to make silicon carbide rod for electric heating element
The silicon carbide epitaxial wafer is characterized in that silicon carbide material molecules are regularly arranged and directionally grown on an epitaxial substrate such as a sapphire substrate under a certain condition, and then the silicon carbide epitaxial wafer is used for preparing a light emitting diode. In the prior art, a method for preparing an epitaxial substrate comprises the steps of polishing one surface of a sapphire substrate to form a plane, and then growing a silicon carbide epitaxial wafer; however, the epitaxial layer of silicon carbide has more dislocation defects due to the difference in lattice constants and thermal expansion coefficients of the silicon carbide and sapphire substrates. Moreover, a large stress exists between the silicon carbide epitaxial layer and the epitaxial substrate, and the silicon carbide epitaxial layer is broken when the stress is larger.
Disclosure of Invention
The invention aims to provide a silicon carbide epitaxial substrate to solve the problem that a silicon carbide epitaxial layer has more dislocation defects.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a carborundum epitaxial substrate, includes the base, but base upper portion has epitaxial growth and be patterned carborundum layer, and carborundum layer upside is provided with a plurality of microstructures, the microstructure is including the bellying that sets up on carborundum layer and the depressed part that forms between two adjacent bellyings, and the carbon nanotube layer is attached to the depressed part inboard, the carbon nanotube layer comprises a plurality of carbon nanotube parallel arrangement, passes through van der Waals' force end to end between the adjacent carbon nanotube in the extending direction among a plurality of carbon nanotubes.
On the basis of the technical scheme, the invention also provides the following optional technical scheme:
in one alternative: the substrate is a single crystal structure.
In one alternative: the silicon carbide layer has a thickness of not less than 200 μm.
In one alternative: the protruding part is a bar structure which is composed of aluminum oxynitride and has a trapezoidal section, the maximum width of the protruding part is 5-200 μm, and the height of the protruding part is 2-50 μm.
In one alternative: the protruding part is of a ring strip structure which is made of GaN and has a rectangular cross section, the width of the protruding part is 8-150 mu m, and the height of the protruding part is 4-40 mu m.
In one alternative: a mask layer is arranged between the silicon carbide layer and the substrate.
Compared with the prior art, the invention has the following beneficial effects:
the substrate in the epitaxial substrate has a patterned growth surface, the patterned surface is provided with a plurality of micron-sized microstructures, so that dislocation defects in the epitaxial growth process can be reduced, the size of a gap of the carbon nanotube layer is nano-micron, the epitaxial growth surface of the silicon carbide layer grows, the contact area between the epitaxially grown silicon carbide layer and the substrate is reduced, the stress between the silicon carbide layer and the substrate in the growth process is reduced, the epitaxial silicon carbide layer with larger thickness can grow, and the quality of the epitaxial silicon carbide layer can be further improved.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a partially enlarged schematic structural view of a portion a in fig. 1.
FIG. 3 is a schematic view of a projection structure of a pillar structure according to the present invention.
FIG. 4 is a schematic view of a protrusion structure of the ring strip structure of the present invention.
Notations for reference numerals: the mask layer comprises a substrate 1, a silicon carbide layer 2, a mask layer 3, a convex part 4, a concave part 5 and a carbon nano tube layer 6.
Detailed Description
The present invention will be described in detail with reference to the following embodiments, wherein like or similar elements are designated by like reference numerals throughout the several views, and wherein the shape, thickness or height of the various elements may be expanded or reduced in practice. The examples are given solely for the purpose of illustration and are not intended to limit the scope of the invention. Any obvious modifications or variations can be made to the present invention without departing from the spirit or scope of the present invention.
Example 1
Referring to fig. 1 to 3, in an embodiment of the present invention, a silicon carbide epitaxial substrate includes a substrate 1, a patterned silicon carbide layer 2 capable of being epitaxially grown is disposed on an upper portion of the substrate 1, a plurality of microstructures are disposed on an upper side of the silicon carbide layer 2, each microstructure includes a protrusion 4 disposed on the silicon carbide layer 2 and a recess 5 formed between two adjacent protrusions 4, a carbon nanotube layer 6 is attached to an inner side of the recess 5, the carbon nanotube layer 6 is formed by a plurality of carbon nanotubes arranged in parallel, adjacent carbon nanotubes in an extending direction of the plurality of carbon nanotubes are connected end to end by van der waals force,
the silicon carbide layer 2 has a thickness of not less than 200 [ mu ] m, the protruding portion 4 is a bar-shaped structure composed of aluminum oxynitride and having a trapezoidal cross section, the maximum width of the protruding portion 4 is 5 [ mu ] m-200 [ mu ] m, the height of the protruding portion 4 is 2 [ mu ] m-50 [ mu ] m, and the substrate 1 is a single crystal structure;
the substrate 1 in the epitaxial substrate is provided with a patterned growth surface, the patterned surface is provided with a plurality of micron-sized microstructures, so that dislocation defects in the epitaxial growth process can be reduced, the gap size of the carbon nanotube layer 6 is nano-micron-sized, and the epitaxial growth surface of the silicon carbide layer 2 grows, so that the contact area between the epitaxially grown silicon carbide layer 2 and the substrate 1 is reduced, the stress between the silicon carbide layer 2 and the substrate 1 in the growth process is reduced, the epitaxial silicon carbide layer 2 with larger thickness can grow, and the quality of the epitaxial silicon carbide layer 2 can be further improved.
Example 2
Referring to fig. 4, the embodiment of the invention is different from embodiment 1 in that: the convex part 4 is of a ring strip structure which is made of GaN and has a rectangular cross section, the width of the convex part 4 is 8-150 μm, and the height of the convex part 4 is 4-40 μm; a mask layer 3 is arranged between the silicon carbide layer 2 and the substrate 1.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (6)
1. The silicon carbide epitaxial substrate comprises a substrate (1), wherein a patterned silicon carbide layer (2) which can be epitaxially grown is arranged on the upper portion of the substrate (1), and is characterized in that a plurality of microstructures are arranged on the upper side of the silicon carbide layer (2), each microstructure comprises a protruding portion (4) arranged on the silicon carbide layer (2) and a recessed portion (5) formed between two adjacent protruding portions (4), a carbon nanotube layer (6) is attached to the inner side of each recessed portion (5), each carbon nanotube layer (6) is formed by arranging a plurality of carbon nanotubes in parallel, and adjacent carbon nanotubes in the extending direction of the plurality of carbon nanotubes are connected end to end through Van der Waals force.
2. Silicon carbide epitaxial substrate according to claim 1, characterized in that the base (1) is a monocrystalline structure.
3. Silicon carbide epitaxial substrate according to claim 1, characterized in that the silicon carbide layer (2) has a thickness not less than 200 μm.
4. Silicon carbide epitaxial substrate according to any one of claims 1 to 3, characterized in that the projections (4) have a pillar structure composed of aluminum oxynitride and having a trapezoidal cross section, the maximum width of the projections (4) being 5 μm to 200 μm and the height of the projections (4) being 2 μm to 50 μm.
5. Silicon carbide epitaxial substrate according to any of claims 1 to 3, characterized in that the protrusions (4) are of a ring-and-stripe structure composed of GaN and having a rectangular cross section, the width of the protrusions (4) being 8 μm to 150 μm and the height of the protrusions (4) being 4 μm to 40 μm.
6. Silicon carbide epitaxial substrate according to claim 5, characterized in that a mask layer (3) is provided between the silicon carbide layer (2) and the base (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910894556.2A CN110600594A (en) | 2019-09-20 | 2019-09-20 | Silicon carbide epitaxial substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910894556.2A CN110600594A (en) | 2019-09-20 | 2019-09-20 | Silicon carbide epitaxial substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110600594A true CN110600594A (en) | 2019-12-20 |
Family
ID=68861947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910894556.2A Pending CN110600594A (en) | 2019-09-20 | 2019-09-20 | Silicon carbide epitaxial substrate |
Country Status (1)
| Country | Link |
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| CN (1) | CN110600594A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719581A (en) * | 2004-07-06 | 2006-01-11 | 中国科学院半导体研究所 | On silicon substrate growing silicon carbide the method for gallium nitride material |
| US20120175606A1 (en) * | 2011-01-12 | 2012-07-12 | Hon Hai Precision Industry Co., Ltd. | Epitaxial structure |
| CN103367556A (en) * | 2012-03-28 | 2013-10-23 | 清华大学 | Epitaxial substrate |
-
2019
- 2019-09-20 CN CN201910894556.2A patent/CN110600594A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719581A (en) * | 2004-07-06 | 2006-01-11 | 中国科学院半导体研究所 | On silicon substrate growing silicon carbide the method for gallium nitride material |
| US20120175606A1 (en) * | 2011-01-12 | 2012-07-12 | Hon Hai Precision Industry Co., Ltd. | Epitaxial structure |
| CN103367556A (en) * | 2012-03-28 | 2013-10-23 | 清华大学 | Epitaxial substrate |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191220 |
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| RJ01 | Rejection of invention patent application after publication |