CN110600495A - Micro-LED chip and packaging structure - Google Patents
Micro-LED chip and packaging structure Download PDFInfo
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- CN110600495A CN110600495A CN201910892907.6A CN201910892907A CN110600495A CN 110600495 A CN110600495 A CN 110600495A CN 201910892907 A CN201910892907 A CN 201910892907A CN 110600495 A CN110600495 A CN 110600495A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000605 extraction Methods 0.000 claims abstract description 24
- 230000003014 reinforcing effect Effects 0.000 claims description 34
- 239000003351 stiffener Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009459 flexible packaging Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a Micro-LED chip and a packaging structure, wherein the Micro-LED chip comprises: a Micro-LED epitaxial wafer; and an IC circuit substrate located at the bottom of the LED epitaxial wafer; the IC substrate controls the working state of the Micro-LED; wherein the IC circuit substrate includes: the IC circuit main area is bonded with the Micro-LED epitaxial wafer; the peripheral connecting line is positioned in the main area of the IC circuit and positioned at the periphery of the bottom of the Micro-LED epitaxial wafer, and an output end is arranged on the peripheral connecting line; the peripheral connecting line is positioned on the top layer of the IC circuit substrate; wherein, the peripheral connecting wire has at least one circle, and each circle of peripheral connecting wire has a respective extraction electrode. The peripheral circuit design makes the distribution of the leading-out pole more flexible, further simplifies the packaging structure and improves the packaging efficiency.
Description
Technical Field
The invention relates to the technical field of chip packaging, in particular to a Micro-LED chip and a packaging structure thereof.
Background
With the development of technology, LED chips tend to be miniaturized and integrated more and more, and Micro-LEDs are born with the advent and are widely concerned by people. The Micro-LED is a Micro LED chip integrating an LED array epitaxial wafer and an IC circuit substrate, and the novel LED chip is lack of a good packaging structure and a good packaging process at present. However, the conventional LED package structure is usually prepared by packaging a single LED chip one by one, then fixing each packaged LED chip one by one on a substrate, and finally electrically connecting the whole substrate with a circuit board. Obviously, the Micro-LED chip cannot adopt the conventional LED packaging structure and packaging method.
In addition, the circuit boards adopted in the conventional packaging structure are all hard circuit boards, however, with the development of the technology, the hard circuit boards greatly restrict the application range of the packaging structure, and are not beneficial to the technical progress. Therefore, a Flexible Printed Circuit (FPC) is preferred to break through the conventional interconnection technology with excellent characteristics of light weight, thin thickness, free bending and folding. When the chip is packaged with the flexible circuit board, the chip does not have a stable substrate for packaging due to the soft and bendable characteristics of the flexible circuit board, and often after packaging, a plurality of air gaps are left between the chip and the flexible circuit board, which causes the problems of insecure chip packaging, easy falling and the like, thereby causing the failure of the whole packaging structure.
In addition, the heat generated by the LED chip is large, but the heat dissipation between the chip and the flexible circuit board is blocked, which leads to heat accumulation and reduces the service life and performance of the final product.
Disclosure of Invention
In order to overcome the above problems, one of the objectives of the present invention is to provide a Micro-LED chip and a package structure suitable for the Micro-LED chip, so as to simplify the package structure, reduce the volume of the package structure, and make the package structure light and thin; the invention also aims to improve the combination capability of the chip and the flexible circuit board and improve the heat dissipation performance of the packaging structure.
In order to achieve the above object, the present invention provides a Micro-LED chip, comprising:
a Micro-LED epitaxial wafer; and
the IC circuit substrate is positioned at the bottom of the LED epitaxial wafer; the IC substrate controls the working state of the Micro-LED; wherein the IC circuit substrate includes:
the IC circuit main area is bonded with the Micro-LED epitaxial wafer;
the peripheral connecting wire is positioned in the main area of the IC circuit and positioned at the periphery of the bottom of the Micro-LED epitaxial wafer, and an output end is arranged on the peripheral connecting wire; the peripheral connecting line is positioned on the top layer of the IC circuit substrate; wherein,
the peripheral connecting wire has at least one turn, and each turn of the peripheral connecting wire has a respective extraction electrode.
In some embodiments, the peripheral wiring has at least two turns, and the corresponding extraction electrodes of each turn of the peripheral wiring are on the same side.
In some embodiments, the peripheral wiring has at least two turns, and the corresponding extraction electrode of each turn of peripheral wiring surrounds the Micro-LED epitaxial wafer.
In some embodiments, the LED epitaxial wafer has an array of spaced LED pixels, all of which are bonded to the IC circuit substrate.
In order to achieve the above object, the present invention further provides a package structure of the Micro-LED chip, including:
a circuit board; the circuit board is provided with a non-functional area and a circuit connection area, and the non-functional area is adjacent to the circuit connection area;
the Micro-LED chip is positioned in the non-functional area, and the back surface of the Micro-LED chip is fixedly contacted with the front surface of the circuit board;
one end of each binding line is in contact connection with the leading-out electrode of the IC circuit substrate, and the other end of each binding line is in contact connection with the circuit connection area of the circuit board; the peripheral connecting wire has at least two circles, and the extraction electrodes corresponding to the peripheral connecting wire of each circle are arranged on the same side; the circuit connection area is located on one side, close to the extraction electrode, of the Micro-LED chip.
In some embodiments, the backside of the Micro-LED chip is adhesively secured to the circuit board.
In some embodiments, the LED epitaxial wafer has an array of spaced LED pixels, all of which are bonded to the IC circuit substrate.
In some embodiments, the contact poles of the circuit connection regions are in one-to-one correspondence with the lead-out poles of the IC circuit substrate.
In some embodiments, the circuit board is a flexible circuit board.
In some embodiments, a stiffener is disposed in the non-functional area of the back side of the flexible circuit board opposite to the Micro-LED chip, and the Micro-LED chip and the circuit connection area are electrically connected by the bonding wire group.
In some embodiments, the non-functional region includes a hollow region, and the reinforcing sheet is in contact with the back surface of the chip through the hollow region.
In some embodiments, the stiffener has a width less than a width of the flexible circuit board and greater than a width of the Micro-LED chip; the length of the reinforcing sheet is smaller than that of the flexible circuit board.
In some embodiments, the stiffener is bonded to the back side of the flexible circuit board by thermocompression.
In some embodiments, the reinforcing sheet has a thickness of 0.05 to 1 mm.
In some embodiments, the thickness of the flexible circuit board is 0.1-0.2 mm, and the thickness of the reinforcing sheet is 0.1-0.2 mm.
In some embodiments, the material of the stiffener is a composite of one or more of aluminum nitride, aluminum oxide, or silicon nitride.
According to the Micro-LED chip, the extraction electrode of the IC circuit is designed, the connection between the extraction electrode of the IC circuit substrate and the contact electrode of the circuit board is very flexible, the chip packaging structure is simplified, the process difficulty is reduced, in addition, the peripheral circuit is arranged on the surface of the IC circuit substrate and is arranged in the main area of the IC circuit and the periphery of the bottom of the Micro-LED epitaxial wafer, the distribution of the extraction electrode is more flexible due to the design of the peripheral circuit, the packaging structure is further simplified, and the packaging efficiency is improved. On the basis, in the Micro-LED chip packaging structure, the Micro-LED chip is directly contacted and fixed on the surface of the non-functional area of the circuit board, and the binding line is directly connected with the Micro-LED chip and the circuit board, so that the height and the volume of the packaging structure are reduced, and the packaging structure is more favorable for lightening, thinning and miniaturization; in addition, the heat dissipation capability of the Micro-LED chip packaging structure is improved, and the service life of the high-power Micro-LED is prolonged. In addition, the invention further designs a flexible packaging structure, and the reinforcing sheet is arranged on the back surface of the flexible circuit board, so that good supporting strength and a flat surface are provided for the combination of the chip and the flexible circuit board, the combination capability of the chip and the flexible circuit board is improved, and the combination interface of the chip and the flexible circuit board is improved; in addition, the ceramic reinforcing sheet is adopted to further improve the heat dissipation capability of the chip and the corrosion resistance of the bonding interface of the flexible circuit board and the chip.
Drawings
FIG. 1 is a schematic diagram of a Micro-LED chip package structure according to an embodiment of the invention
FIG. 2 is a schematic top view of a Micro-LED chip package structure according to an embodiment of the invention
FIG. 3 is a schematic top view of a Micro-LED chip package structure according to another embodiment of the present invention
FIG. 4 is a schematic top view of a Micro-LED chip package structure according to another embodiment of the present invention
FIG. 5 is a schematic top view of a Micro-LED chip package structure according to another embodiment of the present invention
FIG. 6 is a schematic diagram of a flexible package structure according to an embodiment of the invention
FIG. 7 is a schematic structural view of the cross-section along AA' of FIG. 6
FIG. 8 is a schematic diagram of a flexible package structure according to an embodiment of the invention
FIG. 9 is a schematic structural view of the cross-section along AA' direction of FIG. 8
FIG. 10 is a schematic structural diagram of a non-functional area according to an embodiment of the present invention
FIG. 11 is a schematic structural diagram of a non-functional area according to an embodiment of the present invention
FIG. 12 is a schematic structural diagram of a non-functional area according to an embodiment of the present invention
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention will be described in further detail with reference to the accompanying drawings 1 to 12 and specific embodiments. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
Referring to fig. 1 in combination with fig. 2 to 5, an embodiment of a Micro-LED chip package structure includes:
a circuit board 01; the circuit board 01 is provided with a non-functional area and a circuit connection area (such as 03 in fig. 2-5), and the non-functional area is adjacent to the circuit connection area 03;
the Micro-LED chip W is positioned in the non-functional area, and the back surface of the Micro-LED chip W is fixedly contacted with the front surface of the circuit board 01; here, the Micro-LED chip W is adhesively fixed between the back surface thereof and the circuit board 01.
And one end of each binding line L is connected with a leading-out electrode L1 of the Micro-LED chip W, and the other end of each binding line L is in contact connection with a contact electrode L2 in the circuit connection area 03 of the circuit board 01.
Specifically, as shown in fig. 1, the Micro-LED chip W includes: a Micro-LED epitaxial wafer 101 and an IC circuit substrate 102 located at the bottom of the LED epitaxial wafer 101, the bottom of the IC circuit substrate 102 also has a silicon substrate 103, because the IC circuit substrate 102 is prepared in the silicon substrate, and therefore, the silicon substrate 103 where no circuit region is formed is located at the bottom of the IC circuit.
As shown in fig. 2, one end of each binding line L contacts the extraction electrode L1 of the IC circuit substrate 102, and the other end contacts the contact electrode L2 of the connection circuit board. The LED epitaxial wafer 101 has LED pixel arrays arranged at intervals, all of which are bonded on the IC circuit substrate 102.
In some cases, as shown in fig. 2, at least one extraction electrode L1 of the IC circuit substrate, at least one contact electrode L2 of the circuit connection region 03, and extraction electrodes L1 of the IC circuit substrate 102 are in one-to-one correspondence with contact electrodes L2 of the circuit connection region 03 (the region sandwiched by the two broken line frames).
In other cases, as shown in fig. 3, an IC circuit substrate includes: the IC circuit comprises an IC circuit main area, a peripheral connecting wire D and a leading-out pole L1, wherein the peripheral connecting wire D is located on the top layer of an IC circuit substrate, the peripheral connecting wire D is connected with a plurality of leading-out poles L1 of the IC circuit, the leading-out poles L1 are connected with one end of a binding line L through the peripheral connecting wire D, and the other end of the binding line L is connected with a contact pole L2. Here, it should be noted that the contact L2 may be plural, and each contact is connected to a different branch, and plural binding lines L may be connected to one contact L2, and the contact L2 has plural branches inside, and transmits different signals to different lines.
In other cases, as shown in fig. 4, the peripheral wiring D has at least one turn, each turn having a respective extraction electrode L1 of the IC circuit; the peripheral connecting line D is located on the surface of the IC circuit substrate and is correspondingly connected to the contact L2 of the circuit connecting region 03. The extraction electrode L1 of each circle of peripheral wiring D is positioned on the same side of the Micro-LED chip. At this time, a binding line L connects each extraction electrode L1 with the contact electrode L2. Here, it should be noted that the contact L2 may be plural, and each contact is connected to a different branch, and plural binding lines L may be connected to one contact L2, and the contact L2 has plural branches inside, and transmits different signals to different lines.
In addition, in some cases, as shown in fig. 5, the peripheral wiring D may have more than two turns, and the extraction electrode L1 corresponding to each turn of the peripheral wiring D is wrapped around the Micro-LED epitaxial wafer or is arranged around the edge of the Micro-LED chip. Here, the contact electrode L2 and the extraction electrode L1 may correspond to each other one by one, or one contact electrode L2 may correspond to a plurality of extraction electrodes L1. The principle is the same as above.
The preparation method of the Micro-LED chip package structure of the embodiment specifically includes the following steps:
step 01: providing a circuit board, and arranging a non-functional area and a circuit connection area on the circuit board;
step 02: arranging a Micro-LED chip in a non-functional area of the circuit board; wherein the back surface of the Micro-LED chip is contacted and fixed with the front surface of the circuit board;
step 03: adopting a binding wire group to electrically connect the Micro-LED chip and the circuit board; one end of each binding line is connected with a leading-out electrode of the Micro-LED chip, and the other end of each binding line is in contact connection with a circuit connection area of the circuit board.
Referring to fig. 4 and 5, a flexible chip package structure of the present embodiment includes
A flexible circuit board 00;
a reinforcing sheet 02 disposed on the back surface of the flexible circuit board 00; here, the reinforcing sheet 02 may be a ceramic reinforcing sheet or an organic material.
And the chip W is arranged on the front surface of the flexible circuit board 00, the chip W is opposite to the ceramic reinforcing sheet 02, and the ceramic reinforcing sheet 02 supports the back surface of the chip W.
The flexible circuit board 00 herein may have a non-functional region 01, the non-functional region 01 being adjacent to a circuit connection region, a ceramic reinforcing sheet 02 being disposed in the non-functional region, and a chip W electrically connected to the circuit connection region.
Referring to fig. 6 and 7, the non-functional area 01 includes a hollow area Q, and the ceramic reinforcing sheet 02 is in contact with the back surface of the chip W through the hollow area Q. Here, in order to improve the supporting capability of the chip W after the ceramic reinforcing sheet 02 is combined with the circuit board 00, the width of the ceramic reinforcing sheet 02 is smaller than that of the flexible circuit board 00 and larger than that of the chip W; the length of the ceramic reinforcing sheet 02 is smaller than that of the flexible circuit board 00. Further here, the ratio of the minimum width of the nonfunctional area to the width of the flexible circuit board is greater than 1/5 and less than 1.
Here, the ceramic reinforcing sheet 02 and the back surface of the non-functional region 01 of the flexible circuit board 00 may be bonded by thermocompression. In order to improve the bonding strength between the ceramic reinforcing sheet 02 and the flexible circuit board 00 and the supporting force for the chip W after the ceramic reinforcing sheet 02 and the flexible circuit board 00 are bonded under a hot pressing process or other bonding processes, the thickness of the ceramic reinforcing sheet 02 is 0.05-1 mm, preferably, the thickness of the flexible circuit board 00 is 0.1-0.2 mm, and the thickness of the ceramic reinforcing sheet 02 is 0.1-0.2 mm. In order to achieve the above-mentioned thinner thickness and make the ceramic reinforcing sheet 02 at the thinner thickness have the required rigidity and strength, the material of the ceramic reinforcing sheet 02 may be one or a composite of more of aluminum nitride, aluminum oxide or silicon nitride. The ceramic reinforcing sheet 02 may be prepared in size by cutting.
The preparation method of the chip flexible packaging structure of the embodiment comprises the following steps:
step 01: bonding a reinforcing sheet on the back of a flexible circuit board; specifically, the ceramic reinforcing sheet may be bonded to the back surface of the flexible circuit board by thermocompression bonding. The reinforcing sheet may be a ceramic reinforcing sheet here.
In order to form a hollow-out region in the non-functional region of the flexible circuit board, step 01 may specifically include:
step 101: arranging a non-functional area on the flexible circuit board, and forming a hollow area in the non-functional area; the formation of the hollowed-out area can be realized by stamping or cutting.
Step 102: and bonding the ceramic reinforcing sheet on the back of the non-functional area of the flexible circuit board and aligning to the hollow area so as to cover the hollow area. Here, a ceramic reinforcing sheet is bonded to the back surface of the nonfunctional area of the flexible circuit board using a hot pressing process.
Step 02: and adhering the back surface of a chip to the front surface of the flexible circuit board and corresponding to the ceramic reinforcing sheet.
Specifically, the back surface of the chip and the flexible circuit board may be bonded by soldering.
In the present invention, preferably, the hollowed-out area may be a mixture of one or more of a rectangle, a sector, a circle, a triangle, and the like. The hollow-out area may include sub hollow-out areas, a plurality of sub hollow-out areas are arranged in an array, and the sub hollow-out areas may be one or a mixture of more of rectangles, sectors, circles, triangles and the like. In addition, the hollow-out area can also be in a grid shape.
Referring to fig. 8, a schematic structural diagram of a non-functional area according to another embodiment of the invention is shown. In fig. 8, the non-functional region 01 is also a hollow structure, and two bands are used as the non-functional region, and a hollow region is formed between the two bands.
Referring to fig. 9, a schematic structural diagram of a non-functional area according to another embodiment of the invention is shown. The non-functional region 01 in fig. 9 is a projection extending along the circuit connection region 03. The width of the projection is smaller than that of the flexible circuit board
Referring to fig. 10, a schematic structural diagram of a non-functional area according to another embodiment of the invention is shown. In fig. 10, the non-functional area 01 has a hollow area, and the hollow area is a semicircle or a sector.
In the present embodiment, the ceramic reinforcing sheet is described as an example, but in other embodiments, the ceramic reinforcing sheet may be replaced with another rigid sheet having rigidity and strength.
Although the present invention has been described with reference to preferred embodiments, which are illustrated for the purpose of illustration only and not for the purpose of limitation, it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (16)
1. A Micro-LED chip, comprising:
a Micro-LED epitaxial wafer; and
the IC circuit substrate is positioned at the bottom of the LED epitaxial wafer; the IC substrate controls the working state of the Micro-LED; wherein the IC circuit substrate includes:
the IC circuit main area is bonded with the Micro-LED epitaxial wafer;
the peripheral connecting wire is positioned in the main area of the IC circuit and positioned at the periphery of the bottom of the Micro-LED epitaxial wafer, and an output end is arranged on the peripheral connecting wire; the peripheral connecting line is positioned on the top layer of the IC circuit substrate; wherein,
the peripheral connecting wire has at least one turn, and each turn of the peripheral connecting wire has a respective extraction electrode.
2. A Micro-LED chip according to claim 1, wherein the peripheral connection has at least two turns, the corresponding extraction electrodes of each turn of the peripheral connection being on the same side.
3. A Micro-LED chip according to claim 1, wherein the peripheral bond wires have at least two turns, and the corresponding extraction electrode of each turn of peripheral bond wires is wrapped around the Micro-LED epitaxial wafer.
4. The micro-LED chip package structure according to claim 1, wherein the LED epitaxial wafer has an array of spaced LED pixels, all of which are bonded to the IC circuit substrate.
5. A package structure for a Micro-LED chip according to claim 1, comprising:
a circuit board; the circuit board is provided with a non-functional area and a circuit connection area, and the non-functional area is adjacent to the circuit connection area;
the Micro-LED chip is positioned in the non-functional area, and the back surface of the Micro-LED chip is fixedly contacted with the front surface of the circuit board;
one end of each binding line is in contact connection with the leading-out electrode of the IC circuit substrate, and the other end of each binding line is in contact connection with the circuit connection area of the circuit board; the peripheral connecting wire has at least two circles, and the extraction electrodes corresponding to the peripheral connecting wire of each circle are arranged on the same side; the circuit connection area is located on one side, close to the extraction electrode, of the Micro-LED chip.
6. The Micro-LED chip package structure of claim 4, wherein the Micro-LED chip is adhered to the circuit board at the back side.
7. The micro-LED chip package structure according to claim 5, wherein the LED epitaxial wafer has an array of spaced LED pixels, all of which are bonded to the IC circuit substrate.
8. The micro-LED chip package structure according to claim 4, wherein the contact poles of the circuit connection regions are in one-to-one correspondence with the extraction poles of the IC circuit substrate.
9. The micro-LED chip package structure according to claim 4, wherein the circuit board is a flexible circuit board.
10. The Micro-LED chip package structure of claim 8, wherein a stiffener is disposed in the non-functional area of the back surface of the flexible circuit board opposite to the Micro-LED chip, and the Micro-LED chip and the circuit connection area are electrically connected by the bonding wire set.
11. The micro-LED chip package structure according to claim 9, wherein the non-functional region includes a hollowed-out region, and the stiffener contacts the back surface of the chip through the hollowed-out region.
12. The Micro-LED chip package structure according to claim 8, wherein the stiffener has a width smaller than the width of the flexible circuit board and larger than the width of the Micro-LED chip; the length of the reinforcing sheet is smaller than that of the flexible circuit board.
13. The micro-LED chip package structure of claim 8, wherein the stiffener is attached to the back side of the flexible circuit board by thermocompression.
14. The micro-LED chip packaging structure of claim 8, wherein the thickness of the stiffener is 0.05-1 mm.
15. The micro-LED chip package structure of claim 13, wherein the flexible circuit board has a thickness of 0.1-0.2 mm, and the stiffener has a thickness of 0.1-0.2 mm.
16. The micro-LED chip package structure according to claim 8, wherein the material of the stiffener is one or more of aluminum nitride, aluminum oxide, or silicon nitride.
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| CN201910892907.6A CN110600495A (en) | 2019-09-20 | 2019-09-20 | Micro-LED chip and packaging structure |
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| CN201910892907.6A CN110600495A (en) | 2019-09-20 | 2019-09-20 | Micro-LED chip and packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600496A (en) * | 2019-09-20 | 2019-12-20 | 上海显耀显示科技有限公司 | Micro-LED chip packaging structure |
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| KR101121687B1 (en) * | 2011-07-01 | 2012-03-09 | 주식회사 비에스엘 | Flexible led package |
| US20180358340A1 (en) * | 2017-06-09 | 2018-12-13 | Syndiant Inc. | Micro LED Display Module Having Light Transmissive Substrate and Manufacturing Method Thereof |
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| CN110600496A (en) * | 2019-09-20 | 2019-12-20 | 上海显耀显示科技有限公司 | Micro-LED chip packaging structure |
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