CN110596563B - Power conversion device and self-checking method for health state of power semiconductor device thereof - Google Patents
Power conversion device and self-checking method for health state of power semiconductor device thereof Download PDFInfo
- Publication number
- CN110596563B CN110596563B CN201910892853.3A CN201910892853A CN110596563B CN 110596563 B CN110596563 B CN 110596563B CN 201910892853 A CN201910892853 A CN 201910892853A CN 110596563 B CN110596563 B CN 110596563B
- Authority
- CN
- China
- Prior art keywords
- power semiconductor
- semiconductor device
- power
- module
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The invention provides a power conversion device and a self-checking method for the health state of a power semiconductor device thereof, wherein the method comprises the following steps: when a module where a power semiconductor device to be detected is located meets a health state detection condition, acquiring junction temperature of the power semiconductor device to be detected, then driving the power semiconductor device to be detected to be conducted, controlling the power semiconductor device to be detected to flow through detection current, and simultaneously detecting conduction voltage drop of the power semiconductor device to be detected to obtain a detection value of the conduction voltage drop; if the difference value between the detection value of the conduction voltage drop and the theoretical value of the conduction voltage drop is larger than or equal to the threshold value, judging that the power semiconductor device to be tested has a packaging failure phenomenon; and further, the self-detection of the health state of the power semiconductor device to be detected is realized, and the problems of fault operation and complete machine operation breakdown of the IGBT device caused by package failure of the power semiconductor device are solved.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a power conversion device and a self-checking method for the health state of a power semiconductor device of the power conversion device.
Background
With the rapid development of the fields of photovoltaic, wind power, electric vehicle and the like, the application of Insulated Gate Bipolar Transistor (IGBT) is also facing the increasing demand for high reliability. Not only do IGBTs face the need for power density, but the expanded application areas also define the more hostile operating environment for power devices.
Because the thermal expansion coefficients of the constituent materials of all parts of the IGBT are different, the whole device is in the process of changing the temperature continuously when the IGBT is switched to the running state continuously, and therefore the IGBT device is easy to have the packaging failure phenomena of bonding wire separation, breakage, collapse, failure of a soldering tin layer, metallization reconstruction and the like. If the application is a high temperature environment or an environment with variable temperature, the failure phenomenon occurs more frequently. When the IGBT fails, the IGBT device may malfunction and operate directly, and even cause a breakdown of the whole system, resulting in a huge loss.
Disclosure of Invention
In view of this, embodiments of the present invention provide a power conversion apparatus and a method for self-checking a health status of a power semiconductor device thereof, so as to reduce a possibility of a package failure of the power semiconductor device.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions:
the invention discloses a self-checking method for the health status of a power semiconductor device of a power conversion device in a first aspect, which comprises the following steps:
s101, judging whether a module where a power semiconductor device to be detected is located meets a health state detection condition; the module is a power module of a main circuit in the power conversion device;
if the module meets the health state detection condition, executing step S102;
s102, acquiring junction temperature of the power semiconductor device to be tested;
s103, driving the power semiconductor device to be tested to be conducted;
s104, controlling the power semiconductor device to be detected to flow through detection current, and detecting the conduction voltage drop of the power semiconductor device to be detected to obtain a detection value of the conduction voltage drop;
s105, judging whether the difference value between the detection value of the conduction voltage drop and the theoretical value of the conduction voltage drop is smaller than a threshold value; the theoretical value of the conduction voltage drop is calculated according to the detection current;
if the difference is greater than or equal to the threshold, executing step S106;
and S106, judging that the power semiconductor device to be tested has a packaging failure phenomenon.
Alternatively, in the above power semiconductor device health state self-checking method of the power conversion apparatus, the step S101 includes:
and judging whether the time length of the module exiting the normal working state is greater than a first preset time length.
Optionally, in the above method for self-checking the health status of the power semiconductor device of the power conversion apparatus, if the module is an inverter module, the criterion for determining that the module exits the normal operating state is any one of the following:
the current time is out of the time of the normal working state;
the bus voltage of the inversion module is lower than a preset starting voltage;
and a grid-connected relay and/or an off-grid relay of the inversion module are in an off state.
Alternatively, in the above power semiconductor device health state self-checking method of the power conversion apparatus, step S102 includes:
detecting the ambient temperature of the power semiconductor device to be detected;
alternatively, the first and second electrodes may be,
and detecting to obtain the junction temperature of the power semiconductor device to be detected by controlling the micro current to flow through the power semiconductor device to be detected.
Optionally, in the above method for self-checking a health state of a power semiconductor device of a power conversion apparatus, detecting an ambient temperature of the power semiconductor device to be tested includes: and determining the ambient temperature of the power semiconductor device to be tested according to the detection information of the negative temperature characteristic resistor in the module.
Alternatively, in the above-mentioned method for self-checking the health status of the power semiconductor device of the power conversion device, the detection current is a direct current, and the current value of the detection current is known or obtained through current sampling.
Alternatively, in the above method for self-checking a health state of a power semiconductor device of a power conversion apparatus, if the module includes a plurality of power semiconductor devices, after step S105, the method further includes:
s201, waiting for a second preset time;
switching another power semiconductor device in the module to serve as the power semiconductor device to be tested, and returning to the step S102;
and the self detection of the health states of all the power semiconductor devices in the module is completed.
Alternatively, in the above power semiconductor device health state self-test method of the power conversion apparatus, the detection current is an output current of a current source; the step S104 of controlling the power semiconductor device to be tested to flow through the detection current includes:
and controlling the current source to output the detection current to the power semiconductor device to be detected.
Optionally, in the above method for self-checking a health state of a power semiconductor device of a power conversion apparatus, controlling the current source to output the detection current to the power semiconductor device to be tested includes:
controlling the current path between the current source and the power semiconductor device to be tested to be conducted;
alternatively, the first and second electrodes may be,
and controlling each relay between the current source and all the power semiconductor devices to act, so that the current source outputs the detection current to the power semiconductor device to be detected through the corresponding relay.
Optionally, in the above power semiconductor device health state self-checking method of the power conversion apparatus, if the module includes a plurality of power semiconductor devices, after it is determined that the module satisfies the health state detection condition, the step S102 is performed while taking each power semiconductor device in the module as the power semiconductor device to be tested.
Optionally, in the above power semiconductor device health state self-checking method of the power conversion apparatus, at the same time as step S103, the method further includes:
s301, detecting the gate threshold voltage of the power semiconductor device to be detected;
s302, judging whether the power semiconductor device to be tested has a gate pole recession phenomenon according to the gate pole threshold voltage.
Optionally, in the above power semiconductor device health state self-checking method of the power conversion apparatus, after step S104, the method further includes:
s401, detecting the thermal resistance of the power semiconductor device to be detected;
s402, judging whether the power semiconductor device to be tested has the phenomenon of silicone grease mounting failure according to the thermal resistance.
A second aspect of the present invention discloses a power conversion apparatus comprising: the device comprises a main circuit, a detection device and a controller;
the power module in the main circuit comprises a plurality of power semiconductor devices;
the detection device is used for detecting and obtaining detection information of the negative temperature characteristic resistor in the power module and the conduction voltage drop of each power semiconductor device;
the controller is used for executing the self-checking method for the health state of the power semiconductor device of the power conversion device.
Optionally, in the above power conversion apparatus, further comprising: and the direct current source is used for outputting the detection current.
Optionally, in the above power conversion apparatus, the power module is an inverter module, and a dc side of the inverter module is configured to receive output electric energy of the photovoltaic array.
Based on the above embodiments of the present invention, a method for self-checking the health status of a power semiconductor device of a power conversion device is provided, when the module of the power semiconductor device to be tested meets the health state detection condition, the junction temperature of the power semiconductor device to be tested is obtained, then the power semiconductor device to be tested is driven to be conducted, and the power semiconductor device to be tested is controlled to flow through the detection current, meanwhile, the conduction voltage drop of the power semiconductor device to be tested is detected to obtain a detection value of the conduction voltage drop, if the difference value between the detection value of the conduction voltage drop and the theoretical value of the conduction voltage drop is more than or equal to the threshold value, the packaging failure phenomenon of the power semiconductor device to be tested is judged, and further, the self-detection of the health state of the power semiconductor device to be detected is realized, and the problems of fault operation and complete machine operation breakdown of the IGBT device caused by package failure of the power semiconductor device are solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for self-checking a health status of a power semiconductor device of a power conversion apparatus according to an embodiment of the present disclosure;
FIG. 2 is a waveform diagram of a detection current provided by an embodiment of the present application;
fig. 3 is a flowchart of a health status self-checking method for a power semiconductor device of another power conversion apparatus according to an embodiment of the present disclosure;
fig. 4 to fig. 5 are schematic circuit diagrams of two current sources outputting a detection current to a power semiconductor device to be tested according to an embodiment of the present application;
fig. 6 to 7 are flowcharts of two methods for self-checking the health status of the power semiconductor device of the power conversion apparatus according to the embodiment of the present application;
fig. 8 is a schematic structural diagram of a power conversion device according to an embodiment of the present application;
fig. 9 is a control logic diagram of a photovoltaic inverter applying a power semiconductor device health state self-detection method of a power conversion device according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In this application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The embodiment of the invention provides a self-checking method for the health state of a power semiconductor device of a power conversion device, which is used for reducing the possibility of packaging failure of the power semiconductor device.
Referring to fig. 1, the method for self-checking the health status of the power semiconductor device of the power conversion apparatus mainly includes the following steps:
s101, judging whether a module where the power semiconductor device to be detected is located meets a health state detection condition.
The power Semiconductor device may be a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), an IGBT, a diode, or other power Semiconductor devices, and the application does not specifically limit the type of the power Semiconductor device, and all of them belong to the protection scope of the application.
The module where the power semiconductor device is located refers to a power module in a main circuit in the power conversion device, and the power module may be an inverter module, a rectifier module, a dc/dc conversion module, an ac/ac conversion module, or other modules provided with the power semiconductor device.
It should be noted that, in the embodiments of the present application, the power semiconductor device is an IGBT, and the module in which the power semiconductor device is located is an inverter module, but in practical applications, the power semiconductor device may be another device, and the module may also be another kind of module.
It should be further noted that the judgment of whether the module in which the power semiconductor device to be tested is located meets the health status detection condition is performed to avoid that the normal operation of the module is interfered and the reliability of the whole device is reduced when the module in which the power semiconductor device to be tested is located is in the working period to execute the health status detection.
Specifically, the health state detection condition may be set according to an actual situation, for example, the inverter enters a shutdown state at night, or the inverter is started before running; the specific health status detection conditions can be determined according to actual application conditions, and all belong to the protection scope of the application.
If the module satisfies the health status detection condition, step S102 is executed.
And S102, acquiring the junction temperature of the power semiconductor device to be measured.
Wherein the junction temperature is: at the temperature of the actual semiconductor chip in the electronic device. The formula can be used: junction temperature is expressed as thermal resistance x input current + ambient temperature.
It should be noted that, if the module in which the power semiconductor device to be measured is located is in the non-operating state when the junction temperature of the power semiconductor device to be measured is obtained, the junction temperature of the power semiconductor device to be measured is only affected by the ambient temperature, and therefore, the junction temperature can be represented by the ambient temperature. That is, Tj≈TaWherein T isjRepresenting junction temperature, TaRepresenting the ambient temperature.
If the module of the power semiconductor device to be tested is an inversion module in the inverter, the current ambient temperature of the power semiconductor device to be tested can be obtained through the negative temperature characteristic resistor in the inverter, and the obtained ambient temperature is used as the junction temperature of the power semiconductor device to be tested. Namely, the environment temperature of the power semiconductor device to be tested is determined through the detection information of the negative temperature characteristic resistor in the module.
It should be noted that, other specific ways of obtaining the junction temperature of the power semiconductor device to be detected by controlling the micro current flowing through the power semiconductor device to be detected may also be referred to in the prior art, and details of this application are not described herein.
And S103, driving the power semiconductor device to be tested to be conducted.
The power semiconductor device to be tested can be driven to be conducted through the driving module. The driving module may be a driving module of a module in which the power semiconductor device to be tested is located, or a driving module of a device to which the module in which the power semiconductor device to be tested is located belongs.
It should be noted that the execution sequence of steps S102 and S103 is not limited to the execution sequence shown in fig. 1. In practical applications, steps S102 and S103 may be executed simultaneously, but step S102 cannot be executed after step S103. The specific execution sequence may depend on the application environment, and is within the protection scope of the present application.
And S104, controlling the power semiconductor device to be detected to flow through the detection current, and detecting the conduction voltage drop of the power semiconductor device to be detected to obtain a detection value of the conduction voltage drop.
If the power semiconductor device to be tested is an IGBT, the collector of the IGBT can be controlled to pass through the detection current, and the voltage between the collector and the emitter of the IGBT is sampled while the detection current is introduced, so that the detection value of the conduction voltage drop is obtained.
It should be noted that, the duration of controlling the power semiconductor device to be tested to flow through the detection current is not specifically limited, and only after the power semiconductor device to be tested is controlled to flow through the detection current, the conduction voltage drop of the power semiconductor device to be tested can be obtained.
Referring to FIG. 2, a sense current I is shown being applied to the collector of the IGBTcxCurrent magnitude and time. As can be seen from the figure, the current I is detectedcxIs a direct current, and detects a current IcxIs known or obtained via current sampling. The time length of the collector electrode led into the IGBT is t2-t1. Wherein, t2-t1The value of (a) can be determined depending on the application environment thereof.
It should be noted that when the current I is detectedcxWhen the current value is unknown, the detection current I can be obtained by adding a current sampling device in the circuitcxThe current value of (1).
It should be noted that the method of obtaining the detection value of the conduction voltage drop by controlling the current flowing through the power semiconductor device to be detected mainly utilizes the characteristic that the ambient temperature of the power semiconductor device to be detected cannot suddenly change after the sudden change of the current flowing through the power semiconductor device to be detected, because T isj≈TaTherefore, the junction temperature of the power semiconductor device to be tested can be regarded as constant in a short time, and the detection of the conduction voltage drop of the power semiconductor device to be tested can be obtained by measuring the conduction voltage drop of the power semiconductor device to be tested at the momentAnd (6) measuring.
And S105, judging whether the difference value between the detection value of the conduction voltage drop and the theoretical value of the conduction voltage drop is smaller than a threshold value.
And the theoretical value of the conduction voltage drop is calculated according to the detection current.
It should be noted that, the calculation formula adopted for calculating the theoretical value of the conduction voltage drop is as follows: vce＝VD,Tref-α(Tj-Tref)+[RF+Ron,Tref-β(Tj-Tref)]Ic(ii) a Wherein, VceIs the theoretical value of the conduction voltage drop of the power semiconductor device to be measured, IcIs the collector current of the power semiconductor device to be tested, i.e. the detection current mentioned above; t isrefFor the saturation reference temperature, V, of the power semiconductor device to be measuredD,TrefFor the saturation voltage, R, of the power semiconductor device to be testedon,TrefThe saturation resistance of the power semiconductor device to be tested, alpha and beta are the temperature coefficients of the power semiconductor device to be tested, RFFor the package impedance, T, of the power semiconductor device to be testedjIs the current ambient temperature of the power semiconductor device to be tested.
It should be further noted that, in the output characteristic database, a theoretical value of the conduction voltage drop of the power semiconductor device to be detected when the collector current is the detection current at the current ambient temperature may also be obtained through query. The output characteristic database can be established in advance, and the data in the database is the data of the power semiconductor device with the same model as the power semiconductor device to be tested in a healthy state.
Specifically, the difference between the detection value of the conduction voltage drop and the theoretical value of the conduction voltage drop may be obtained through difference calculation, and then the obtained difference is compared with the threshold to determine the relationship between the difference and the threshold.
It should be noted that the threshold is a criterion for determining that the power semiconductor device to be tested is completely or imminent to fail, and a value of the threshold may be set according to experience or an actual standard, or may be set according to an actual working condition and a requirement.
If the difference is greater than or equal to the threshold, step S106 is executed. And if the difference value is smaller than the threshold value, judging that the power semiconductor device to be tested has no packaging failure phenomenon.
And S106, judging that the power semiconductor device to be tested has a packaging failure phenomenon.
It should be noted that, when the power semiconductor device to be tested fails, such as a bond wire break, a solder layer failure, and a metallization reconfiguration, the detected value of the conduction voltage drop is obviously increased. The packaging failure phenomenon of the power semiconductor device to be tested can be determined by comparing the detection value of the conduction voltage drop with the theoretical value of the conduction voltage drop.
In practical application, if the detected value of the conduction voltage drop is obviously higher than the theoretical value of the conduction voltage drop, the health state of the power semiconductor device to be tested is considered to be remarkably reduced, and the packaging begins to fail.
Optionally, if the difference is greater than or equal to the threshold, an alarm signal may also be generated.
Specifically, if the difference is greater than or equal to the threshold, the module in which the power semiconductor device to be tested is located may be controlled to send a health status evaluation signal for the power semiconductor device to be tested, that is, to generate an alarm signal.
According to the self-checking method for the health state of the power semiconductor device of the power conversion device, the health state of the power semiconductor device to be detected can be self-checked through the principle, and the problems of fault operation and complete machine operation breakdown of an IGBT device caused by package failure of the power semiconductor device are solved.
Moreover, the self-checking method for the health state of the power semiconductor device of the power conversion device provided by the invention also fully utilizes an NTC (Negative Temperature Coefficient) component carried by the power conversion device, does not need to add an additional component to measure the environmental Temperature of the power semiconductor device to be measured, and does not increase the system cost. In addition, the self-checking method for the health state of the power semiconductor device of the power conversion device not only does not limit the type of the power semiconductor device, but also can realize the field application of various devices containing the power semiconductor device, such as a photovoltaic inverter and the like, and timely feed back the health state of the internal power semiconductor device.
It should be noted that, in the prior art, there is a method for detecting failure of an IGBT bonding wire, which determines the switching state of a switching device through a current path, and then fine-tunes a PWM (Pulse Width Modulation) waveform in each cycle to select an appropriate measurement time period; in the monitoring time period, two kinds of amplitude currents are introduced into an IGBT in the inverter, and the junction temperature and the conduction voltage drop are measured; and if the measured conduction voltage drop is larger than the threshold value, the bonding wire failure in the IGBT is considered to occur. However, the method can only be applied to a specific type of NPC (neutral-Point-clamped) three-level inverter, and lacks universality; in addition, the method also needs to adjust the PWM waveform during the working period of the inverter, thus the distortion rate of the waveform of the inverted output current is increased; in addition, the control steps of the method are complex, and once delay on a control circuit is increased, the situation of direct connection of bridge arms can be caused, the operation fault of the inverter is directly caused, the work of the inverter is influenced, and the reliability of the whole inverter is reduced.
Therefore, the present embodiment provides another specific method for self-checking the health status of the power semiconductor device of the power conversion apparatus, and in addition to the above embodiment and fig. 1, the step S101 is preferably as follows:
and judging whether the time length of the module exiting the normal working state is greater than a first preset time length.
The first preset time can be set according to the specific application environment. If the junction temperature is characterized by ambient temperature, the first predetermined time period may be set a little longer to facilitate dissipation of the operating residual temperature of the module. If the junction temperature is detected by the micro-current, the first preset time period can be set to be shorter as long as the module is not in a normal working state.
Specifically, whether the module exits the normal working state or not can be determined by judging whether the current time is out of the normal working state time or not. And if the current time is out of the normal working state time, the module is considered to be out of the normal working state.
Or, if the module is an inversion module, whether the module quits the normal working state or not can be determined by judging whether the bus voltage of the inversion module is lower than the preset starting voltage or not, or whether a grid-connected relay and/or an off-grid relay of the inversion module is in a turn-off state or not. And if the bus voltage of the inversion module is lower than the preset starting voltage, or if the grid-connected relay and/or the off-grid relay of the inversion module are in an off state, the module is considered to be out of the normal working state.
In addition, when the inverter is not in a working state, the bus voltage of the inverter module is zero voltage or low voltage, so that whether the module exits from a normal working state can be determined by judging whether the bus voltage of the inverter module is lower than a preset starting voltage or not. The preset starting voltage is the self-contained starting voltage of the inverter module, the specific value can ensure the application environment of the inverter module, and the inverter module is not specifically limited in the application and belongs to the protection range of the application.
It should be noted that the purpose of determining whether the time length for the module to exit from the normal operating state is greater than the first preset time length is to reduce that the obtained junction temperature and ambient temperature deviation of the power semiconductor device to be measured is too large due to current or external interference factors when the control module starts to perform the health state detection on the power semiconductor device to be measured.
The method for self-checking the health state of the power semiconductor device of the power conversion device provided by the embodiment not only does not limit the type of the power semiconductor device and can be suitable for various topologies containing power semiconductors, but also can execute the self-checking of the health state of the power semiconductor device on the premise of not influencing the normal work of an inverter of a photovoltaic grid-connected system and not reducing the overall reliability of the system; in addition, the method has simple control logic and can ensure the overall reliability of the system.
In practical application, the method for self-checking the health state of the power semiconductor device of the power conversion device provided by the embodiment can be applied to a photovoltaic inverter, and after the photovoltaic inverter is shut down every day, the health state of the critical IGBT is self-checked, the health state of the critical IGBT is evaluated, and an alarm signal is sent out in time. When the IGBT failure phenomenon is detected, the corresponding IGBT can be replaced in time, and compared with detection before operation of the photovoltaic inverter, detection after shutdown of the photovoltaic inverter is better.
It is also to be noted that, if the power semiconductor device state of health self-checking method of the power conversion apparatus is applied to a photovoltaic inverter, the method can be performed not only in a shutdown state during a night period but also in a night-like scene such as daytime under rainy weather conditions or the like; the method can be executed in the non-working time period of the inverter, so that the normal work of the inverter of the photovoltaic grid-connected system is not influenced, and the overall reliability of the system is not reduced.
In another embodiment of the present application, referring to fig. 3 based on fig. 1, if the module includes a plurality of power semiconductor devices, after determining whether the difference between the detected value of the turn-on voltage drop and the theoretical value of the turn-on voltage drop is smaller than the threshold in step S105, the method further includes the following steps:
s201, waiting for a second preset time, and taking another power semiconductor device in the switching module as a power semiconductor device to be tested.
And then returns to step S102 until the self-detection of the health states of all the power semiconductor devices in the module is completed.
It should be noted that the purpose of waiting for the second preset time period is to ensure that the thermal disturbance caused by the last IGBT health detection process has been dissipated.
Specifically, after the health state detection of one IGBT is completed, the control module starts to execute the health state detection of the next IGBT, and since the current is introduced into the detection process of the previous IGBT, the temperature may be disturbed, so that in order to avoid the temperature disturbance caused by the current, a second preset time period may be waited to ensure that the thermal disturbance caused when the last IGBT executes the health state detection is dissipated, and the next IGBT to be detected and the external environment are in a thermal balance state. Therefore, the specific value of the second preset duration depends on the specific application environment, and values that can meet the above requirements are all within the protection scope of the present application.
In addition, the detection current mentioned in the above embodiment is preferably an output current of a current source. At this time, the step S104 of controlling the power semiconductor device to be tested to flow through the detection current specifically includes: and controlling the current source to output the detection current to the power semiconductor device to be detected. When the power semiconductor devices share the same current source or are respectively provided with an independent current source, the specific process of the step can be as follows: controlling the conduction of a current path between a current source and the power semiconductor device to be tested; when the power semiconductor devices share the same current source, the specific process of the step may also be: and controlling each relay between the current source and all the power semiconductor devices to act, so that the current source outputs detection current to the power semiconductor device to be detected through the corresponding relay.
When the power semiconductor devices share the same current source:
referring to fig. 4, corresponding switches are added in the branches where the current source is connected to each power semiconductor device, and the on/off of the current path between the current source and the power semiconductor device to be tested is controlled by controlling the on/off of the switches. Specifically, the opening and closing of the corresponding switches in the circuit may be controlled by a control signal.
With reference to fig. 5, a relay unit is disposed between the current source and each power semiconductor device, and the relay unit includes a plurality of relays, and the relay unit can control the operation of each relay in the relay unit through a control signal, so that the current source outputs a detection current to the power semiconductor device to be detected through the corresponding relay.
In practical applications, if the module includes a plurality of power semiconductor devices, it is not necessary to perform the health state self-inspection on each power semiconductor device one by one only according to the form shown in fig. 3, and after it is determined that the module satisfies the health state detection condition, each power semiconductor device in the module may be respectively used as a power semiconductor device to be detected, and step S102 is executed to obtain the junction temperature of the power semiconductor device to be detected.
It should be noted that if there are multiple power semiconductor devices, the time consumed for performing the self-test of the health status of each power semiconductor device one by one is too long, and in order to save the time consumed for the self-test of the health status of all the power semiconductor devices in the module, all the power semiconductor devices in the module may be simultaneously used as the power semiconductor devices to be tested, and steps S102 to S105 may be simultaneously performed to obtain the self-test result of each power semiconductor device.
It should be further noted that, after the junction temperature of the power semiconductor device to be measured is obtained, subsequent steps performed are the same as those shown in fig. 1, and reference may be made to the relevant description of the corresponding embodiment in fig. 1, which is not repeated herein, and all of which belong to the protection scope of the present application.
In practical application, the failure phenomenon of the IGBT, except for a short-circuit fault or an overvoltage of an external application line, is mainly a fatigue failure of the IGBT itself, which is a gradual and non-abrupt process. Fatigue failure may be, in addition to the package failure described above, a gate failure or a silicone installation failure.
Therefore, on the basis of the above embodiment, referring to fig. 6, in another embodiment of the present application, while performing step S103 to drive the power semiconductor device to be tested to be turned on, the method further includes the following steps:
s301, detecting the gate threshold voltage of the power semiconductor device to be detected.
The method for detecting the gate threshold voltage of the power semiconductor device to be detected is not particularly limited, and belongs to the protection scope of the application.
And S302, judging whether the gate electrode recession phenomenon occurs in the power semiconductor device to be tested according to the gate electrode threshold voltage.
It should be noted that the detected gate threshold voltage may be compared with the gate voltage of the power semiconductor device to be tested under normal conditions, and whether the gate decay phenomenon occurs in the power semiconductor device to be tested is determined according to the comparison result.
Specifically, after the gate pole decline phenomenon of the power semiconductor device to be tested is judged according to the gate pole threshold voltage, an alarm signal can be output to alarm the abnormality of the power semiconductor device to be tested.
In this embodiment, on the basis of determining whether the power semiconductor device to be tested has a package failure, the detected voltage data is used to determine whether the power semiconductor device to be tested has a gate decay phenomenon by detecting the gate threshold voltage of the power semiconductor device to be tested, so that self-checking items are enriched.
Based on the above embodiment, referring to fig. 7, in another embodiment of the present application, after the step S104 is executed to control the power semiconductor device to be tested to flow through the detection current, and detect the conduction voltage drop of the power semiconductor device to be tested, and obtain the detection value of the conduction voltage drop, the method further includes the following steps:
s401, detecting the thermal resistance of the power semiconductor device to be detected.
It should be noted that, the method for detecting the thermal resistance of the power semiconductor device to be detected is not specifically limited in this application, and all the methods belong to the protection scope of this application.
S402, judging whether the power semiconductor device to be tested has the phenomenon of silicone grease mounting failure according to the thermal resistance.
It should be noted that, whether the power semiconductor device to be tested has the phenomenon of silicone grease mounting failure can be judged according to the resistance value of the thermal resistance. After judging whether the silicon grease mounting failure phenomenon occurs to the power semiconductor device to be tested, an alarm signal can be output for alarming the abnormality of the power semiconductor device to be tested.
In this embodiment, on the basis of determining whether the power semiconductor device to be tested has a package failure, the thermal resistance of the power semiconductor device to be tested is detected, and whether the power semiconductor device to be tested has a silicone grease mounting failure is determined by using the detected thermal resistance value, so that the self-checking items are enriched.
It should be further noted that, besides detecting the thermal resistance and the threshold voltage, the silicone grease recession detection and the gate recession detection of the power semiconductor device to be detected are realized, and other parameters of the power semiconductor device to be detected can be detected, so as to judge other failure phenomena of the power semiconductor device to be detected. Other parameters of the power semiconductor device to be tested are detected, and a specific execution mode of other failure phenomena of the power semiconductor device to be tested is determined, which can be mutually referred to with the specific process types shown in the above embodiments and is not repeated.
Referring to fig. 8, the present application also provides a power conversion apparatus including:
a main circuit 801, a detection device 802 and a controller 803.
The power module in the main circuit 801 includes a plurality of power semiconductor devices.
The detection device 802 is used for detecting and obtaining detection information of the negative temperature characteristic resistor in the power module and conduction voltage drops of the power semiconductor devices.
The controller 803 includes a control module and a driving module, and the control module is used for executing the self-checking method for the health status of the power semiconductor device of the power conversion device according to any one of the embodiments.
For the method for self-checking the health status of the power semiconductor device of the power conversion apparatus executed by the controller 803 in the photovoltaic inverter, reference may be made to the above embodiments, and details are not repeated here.
Optionally, the power conversion apparatus further includes: and the direct current source is used for outputting the detection current.
Alternatively, the power conversion device may be an inverter, a rectifier, a dc-dc converter or an ac-ac converter, or any other device having a main circuit including a power module formed by a power semiconductor device, and is within the scope of the present application.
When the power module of the power conversion device is an inverter module, the power conversion device is an inverter; referring to fig. 9, in a normal operating state, the control module controls the driving module to perform on-off control on each power semiconductor device to be tested in the inverter module, so that the inverter module performs corresponding power conversion on the received electric energy on the direct current side, thereby implementing a grid-connected function on the alternating current power grid; when the power module meets the health state detection condition, the control module controls the driving module to control the on-off of the power semiconductor device to be detected, then controls the direct current source to input detection current to the power semiconductor device to be detected, further samples the resistance voltage signal of the power semiconductor device to be detected through the NTC assembly, and finally completes the health state detection of the power semiconductor device to be detected by using a power semiconductor device health state self-detection method of the power conversion device according to the sampled data.
When the direct current side of the inverter module is connected with the photovoltaic array directly or through the confluence device and receives the output electric energy of the photovoltaic array, the alternating current side of the inverter module is used for connecting an alternating current power grid or a load, and the power conversion device is a photovoltaic inverter. The structure of the photovoltaic inverter can be seen in the prior art, and the health state detection principle of the power semiconductor device can be seen in the above embodiments, which are not described in detail herein.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, the system or system embodiments are substantially similar to the method embodiments and therefore are described in a relatively simple manner, and reference may be made to some of the descriptions of the method embodiments for related points. The above-described system and system embodiments are only illustrative, wherein the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (15)
1. A method for self-checking the health status of a power semiconductor device of a power conversion device, comprising:
s101, judging whether a module where a power semiconductor device to be detected is located meets a health state detection condition; the module is a power module of a main circuit in the power conversion device;
if the module meets the health state detection condition, executing step S102;
s102, acquiring junction temperature of the power semiconductor device to be tested;
s103, driving the power semiconductor device to be tested to be conducted;
s104, controlling the power semiconductor device to be detected to flow through detection current, and detecting the conduction voltage drop of the power semiconductor device to be detected to obtain a detection value of the conduction voltage drop;
s105, judging whether the difference value between the detection value of the conduction voltage drop and the theoretical value of the conduction voltage drop is smaller than a threshold value; the theoretical value of the conduction voltage drop is calculated according to the detection current;
if the difference is greater than or equal to the threshold, executing step S106;
and S106, judging that the power semiconductor device to be tested has a packaging failure phenomenon.
2. The method for self-checking the health status of the power semiconductor device of the power converter according to claim 1, wherein the step S101 comprises:
and judging whether the time length of the module exiting the normal working state is greater than a first preset time length.
3. The method for self-checking the health status of the power semiconductor device of the power conversion device according to claim 2, wherein if the power module is an inverter module, the criterion for determining that the module exits the normal operating state is any one of the following:
the current time is out of the time of the normal working state;
the bus voltage of the inversion module is lower than a preset starting voltage;
and a grid-connected relay and/or an off-grid relay of the inversion module are in an off state.
4. The method for self-checking the health status of the power semiconductor device of the power converter according to claim 1, wherein step S102 comprises:
detecting the ambient temperature of the power semiconductor device to be detected;
alternatively, the first and second electrodes may be,
and detecting to obtain the junction temperature of the power semiconductor device to be detected by controlling the micro current to flow through the power semiconductor device to be detected.
5. The method for self-checking the health status of the power semiconductor device of the power conversion device according to claim 4, wherein the step of detecting the ambient temperature of the power semiconductor device to be tested comprises the steps of: and determining the ambient temperature of the power semiconductor device to be tested according to the detection information of the negative temperature characteristic resistor in the module.
6. The method for self-checking the health status of a power semiconductor device of a power conversion device according to claim 1, wherein the detection current is a direct current, and a current value of the detection current is known or obtained by current sampling.
7. The method for self-checking the health status of the power semiconductor device of the power converter according to any one of claims 1 to 6, wherein if the module includes a plurality of power semiconductor devices, after step S105, the method further comprises:
s201, waiting for a second preset time;
switching another power semiconductor device in the module to serve as the power semiconductor device to be tested, and returning to the step S102;
and the self detection of the health states of all the power semiconductor devices in the module is completed.
8. The method according to claim 7, wherein the detection current is an output current of a current source; the step S104 of controlling the power semiconductor device to be tested to flow through the detection current includes:
and controlling the current source to output the detection current to the power semiconductor device to be detected.
9. The method for self-checking the health status of the power semiconductor device of the power converter according to claim 8, wherein controlling the current source to output the detection current to the power semiconductor device to be tested comprises:
controlling the current path between the current source and the power semiconductor device to be tested to be conducted;
alternatively, the first and second electrodes may be,
and controlling each relay between the current source and all the power semiconductor devices to act, so that the current source outputs the detection current to the power semiconductor device to be detected through the corresponding relay.
10. The method for self-checking the health status of the power semiconductor devices of the power converter according to any one of claims 1 to 6, wherein if the module includes a plurality of power semiconductor devices, after determining that the module satisfies the health status check condition, the step S102 is executed while using each power semiconductor device in the module as the power semiconductor device to be tested.
11. The method for self-checking the health status of a power semiconductor device of a power converter according to any one of claims 1 to 6, further comprising, in parallel with step S103:
s301, detecting the gate threshold voltage of the power semiconductor device to be detected;
s302, judging whether the power semiconductor device to be tested has a gate pole recession phenomenon according to the gate pole threshold voltage.
12. The method for self-checking the health status of a power semiconductor device of a power converter according to any one of claims 1 to 6, further comprising, after step S104:
s401, detecting the thermal resistance of the power semiconductor device to be detected;
s402, judging whether the power semiconductor device to be tested has the phenomenon of silicone grease mounting failure according to the thermal resistance.
13. A power conversion device, comprising: the device comprises a main circuit, a detection device and a controller;
the power module in the main circuit comprises a plurality of power semiconductor devices;
the detection device is used for detecting and obtaining detection information of the negative temperature characteristic resistor in the power module and the conduction voltage drop of each power semiconductor device;
the controller is used for executing the self-checking method of the health state of the power semiconductor device of the power conversion device according to any one of claims 1 to 12.
14. The power conversion device according to claim 13, further comprising: and the direct current source is used for outputting the detection current.
15. The power conversion device of claim 13, wherein the power module is an inverter module and the dc side of the inverter module is configured to receive the output power of the photovoltaic array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910892853.3A CN110596563B (en) | 2019-09-20 | 2019-09-20 | Power conversion device and self-checking method for health state of power semiconductor device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910892853.3A CN110596563B (en) | 2019-09-20 | 2019-09-20 | Power conversion device and self-checking method for health state of power semiconductor device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110596563A CN110596563A (en) | 2019-12-20 |
| CN110596563B true CN110596563B (en) | 2021-11-02 |
Family
ID=68861773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910892853.3A Active CN110596563B (en) | 2019-09-20 | 2019-09-20 | Power conversion device and self-checking method for health state of power semiconductor device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110596563B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111781482B (en) * | 2020-06-10 | 2022-10-25 | 徐州中矿大传动与自动化有限公司 | Method and device for detecting health state of bonding wire of high-power SIC MOSFET module |
| CN113419155B (en) * | 2021-06-11 | 2022-06-21 | 合肥工业大学 | IGBT module on-line monitoring system and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048605A (en) * | 2012-12-22 | 2013-04-17 | 三峡电力职业学院 | Detecting and screening method for LED (Light Emitting Diode) aging |
| CN103364707A (en) * | 2013-08-05 | 2013-10-23 | 莆田学院 | High-power LED (light-emitting diode) chip packaging quality detecting method |
| CN105807197A (en) * | 2014-12-29 | 2016-07-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Detection method of semiconductor laser degradation mechanism |
| KR20190006744A (en) * | 2017-07-11 | 2019-01-21 | 세메스 주식회사 | Power supply and Burn-in tester including the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9140751B2 (en) * | 2013-03-27 | 2015-09-22 | Texas Instruments Incorporated | Testing integrated circuit packaging for output short circuit current |
-
2019
- 2019-09-20 CN CN201910892853.3A patent/CN110596563B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048605A (en) * | 2012-12-22 | 2013-04-17 | 三峡电力职业学院 | Detecting and screening method for LED (Light Emitting Diode) aging |
| CN103364707A (en) * | 2013-08-05 | 2013-10-23 | 莆田学院 | High-power LED (light-emitting diode) chip packaging quality detecting method |
| CN105807197A (en) * | 2014-12-29 | 2016-07-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Detection method of semiconductor laser degradation mechanism |
| KR20190006744A (en) * | 2017-07-11 | 2019-01-21 | 세메스 주식회사 | Power supply and Burn-in tester including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110596563A (en) | 2019-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105305780B (en) | Semiconductor device and power-converting device | |
| CN102545639B (en) | For regulating the circuit of direct voltage and method and electric power converter | |
| Al-Naseem et al. | Prediction of switching loss variations by averaged switch modeling | |
| EP2882103B1 (en) | Method and apparatus for short circuit protection of power semiconductor switch | |
| JP5724730B2 (en) | Semiconductor device driving apparatus | |
| CN109075782A (en) | Junction temperature and current sense | |
| CN111781482B (en) | Method and device for detecting health state of bonding wire of high-power SIC MOSFET module | |
| CN202550515U (en) | High-power IGBT (insulated gate bipolar transistor) comprehensive overcurrent protection circuit | |
| CN103901301A (en) | Fault diagnosis method for frequency converter | |
| CN110596563B (en) | Power conversion device and self-checking method for health state of power semiconductor device thereof | |
| JP2017017822A (en) | Semiconductor device and failure detection method | |
| JP4942804B2 (en) | Semiconductor power converter | |
| JP2006512040A (en) | Flexible inverter power module for motor drive | |
| CN104247245A (en) | Control device for power conversion device | |
| US11757444B2 (en) | Semiconductor element drive device and power conversion apparatus | |
| CN109601022A (en) | The method for detecting abnormality of DC-to-AC converter and DC-to-AC converter | |
| Hofer-Noser et al. | Monitoring of paralleled IGBT/diode modules | |
| CN113567825B (en) | IGBT module bonding wire breakage online monitoring device, monitoring method and application | |
| KR19980071760A (en) | Circuit and Method for Improving IGBT Short Circuit Capacity | |
| US10067175B2 (en) | Determining bond wire failures | |
| CN104901574A (en) | Bridge circuit and short circuit protection method thereof | |
| JP6717380B2 (en) | Semiconductor module and chip design method of switching element used in semiconductor module | |
| JP5956596B2 (en) | Photovoltaic system | |
| JP2019530411A (en) | Solar module, solar power generation system, and voltage limiting method | |
| CN209946257U (en) | Saturation voltage drop detection circuit based on IGBT |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211208 Address after: 230088 west side of the second floor of sunshine power R & D building, no.1699 Xiyou Road, high tech Zone, Hefei City, Anhui Province Patentee after: Hefei Hengjun Testing Technology Co.,Ltd. Address before: 230088 No. 1699 Xiyou Road, Hefei High-tech Zone, Anhui Province Patentee before: SUNGROW POWER SUPPLY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: West side of the second floor of Sunshine Power R&D Building, No. 1699 Xiyou Road, High tech Zone, Hefei City, Anhui Province, 230000 Patentee after: Hengjun Testing Technology Co.,Ltd. Address before: 230088 west side of the second floor of sunshine power R & D building, no.1699 Xiyou Road, high tech Zone, Hefei City, Anhui Province Patentee before: Hefei Hengjun Testing Technology Co.,Ltd. |