CN110591562A - Polishing solution for sapphire grinding and polishing process and preparation method thereof - Google Patents
Polishing solution for sapphire grinding and polishing process and preparation method thereof Download PDFInfo
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- CN110591562A CN110591562A CN201910862695.7A CN201910862695A CN110591562A CN 110591562 A CN110591562 A CN 110591562A CN 201910862695 A CN201910862695 A CN 201910862695A CN 110591562 A CN110591562 A CN 110591562A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
The invention discloses a polishing solution for a sapphire grinding and polishing process and a preparation method thereof, wherein the polishing solution comprises the following raw materials in parts by weight: 35-63 parts of composite abrasive, 1-3 parts of dispersant, 1-3 parts of thickener, 1-2 parts of alkaline regulator and 62-85 parts of deionized water; wherein, the compound abrasive is a mixture of two of silicon nitride, silicon carbide, boron nitride and boron carbide. The polishing solution has the characteristics of low cost and simple and convenient preparation process.
Description
Technical Field
The invention belongs to the technical field of sapphire polishing, and particularly relates to a polishing solution for a sapphire grinding and polishing process and a preparation method thereof.
Background
The main component of Sapphire (Sapphire) is alumina (Al)2O3) The sapphire crystal is a unique combination which integrates excellent optical properties, physical properties and chemical properties. Sapphire, which is the hardest oxide crystal, is used in various demanding fields such as precision instruments and meters, infrared light-transmitting materials for the aerospace industry, windows and mirrors of lasers, and the like, due to its optical and physical properties. Sapphire can maintain high strength, excellent thermal properties and transmittance at high temperatures, has good thermal properties, excellent electrical and dielectric properties, and is chemically resistant. With the rapid development of science and technology, sapphire crystals have become an important basic material for modern industries, especially microelectronics and optoelectronics industries. The grinding process is to obtain good flatness and curvature of the optical sapphire material, anSurface roughness, the key process of guaranteeing polishing quality and efficiency. However, the existing sapphire polishing solution has the defects of poor performance, high cost and complex preparation.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the polishing solution for the sapphire grinding and polishing process and the preparation method thereof.
The invention is realized by the following technical scheme:
the polishing solution for the sapphire grinding and polishing process comprises the following raw materials in parts by weight: 35-63 parts of composite abrasive, 1-3 parts of dispersant, 1-3 parts of thickener, 1-2 parts of alkaline regulator and 62-85 parts of deionized water; wherein, the compound abrasive is a mixture of two of silicon nitride, silicon carbide, boron nitride and boron carbide.
Preferably, the dispersant is potassium tripolyphosphate or sodium hexametaphosphate.
Preferably, the thickener is sodium polyacrylate or polyacrylamide.
Preferably, the alkaline regulator is sodium hydroxide or calcium hydroxide.
A preparation method of polishing solution for sapphire grinding and polishing process comprises the following steps: mixing the raw materials of the composite abrasive, placing the mixture in a ball mill, adding a dispersing agent and a thickening agent, adjusting the pH value to 7-8 by an alkaline regulator, carrying out ball milling for 10-15 min, and adding deionized water to dilute the concentration to obtain the composite abrasive.
The invention has the following beneficial effects:
the polishing solution provided by the invention has the advantages of low price of raw materials, simple and feasible preparation method, suitability for industrial application and high practical value.
Detailed Description
The invention is further illustrated with reference to the following specific examples.
Example 1
A polishing solution for a sapphire grinding and polishing process is composed of the following raw materials in parts by weight: 35 parts of composite abrasive, 1 part of dispersant, 1 part of thickening agent, 1 part of alkaline regulator and 62 parts of deionized water.
The composite abrasive is a mixture of silicon nitride and silicon carbide, wherein the particle size of silicon nitride micro powder is 5-10 mu m, the particle size of silicon carbide micro powder is 5-10 mu m, and the silicon nitride micro powder and the silicon carbide micro powder are mixed according to the mass ratio of 1: 1.
The dispersant is potassium tripolyphosphate.
The thickening agent is sodium polyacrylate.
The alkaline regulator is sodium hydroxide.
The preparation method of the polishing solution comprises the following steps:
mixing silicon nitride micro powder and silicon carbide micro powder according to the mass ratio of 1:1, placing the mixture in a ball mill, adding potassium tripolyphosphate and sodium polyacrylate, adjusting the pH value to 7-8 through sodium hydroxide, carrying out ball milling for 10min, and adding deionized water to dilute the concentration to obtain the silicon nitride/sodium carbide composite material.
Example 2
A polishing solution for a sapphire grinding and polishing process is composed of the following raw materials in parts by weight: 63 parts of composite abrasive, 3 parts of dispersant, 3 parts of thickener, 2 parts of alkaline regulator and 85 parts of deionized water.
The composite abrasive is a mixture of boron nitride and boron carbide, wherein the particle size of the boron nitride micro powder is 10-20 microns, the particle size of the boron carbide micro powder is 5-10 microns, and the boron nitride micro powder and the boron carbide micro powder are mixed according to the mass ratio of 1: 2.
The dispersant is sodium hexametaphosphate.
The thickening agent is polyacrylamide.
The alkaline regulator is calcium hydroxide.
The preparation method of the polishing solution comprises the following steps:
mixing boron nitride micro powder and boron carbide micro powder according to the mass ratio of 2:1, placing the mixture in a ball mill, adding sodium hexametaphosphate and polyacrylamide, adjusting the pH value to 7-8 by calcium hydroxide, carrying out ball milling for 15min, and adding deionized water to dilute the concentration to obtain the boron nitride/boron carbide composite material.
Example 3
A polishing solution for a sapphire grinding and polishing process is composed of the following raw materials in parts by weight: 48 parts of composite abrasive, 2 parts of dispersant, 2 parts of thickening agent, 2 parts of alkaline regulator and 76 parts of deionized water.
The composite abrasive is a mixture of silicon nitride and boron nitride, wherein the particle size of silicon nitride micro powder is 5-10 mu m, the particle size of boron nitride micro powder is 10-20 mu m, and the silicon nitride micro powder and the boron nitride micro powder are mixed according to the mass ratio of 2: 1.
The dispersant is potassium tripolyphosphate.
The thickening agent is polyacrylamide.
The alkaline regulator is sodium hydroxide.
The preparation method of the polishing solution comprises the following steps:
mixing silicon nitride micro powder and boron nitride micro powder according to the mass ratio of 1:2, placing the mixture in a ball mill, adding potassium tripolyphosphate and polyacrylamide, adjusting the pH value to 7-8 through sodium hydroxide, carrying out ball milling for 15min, and adding deionized water to dilute the concentration to obtain the silicon nitride/boron nitride micro powder.
Example 4
A polishing solution for a sapphire grinding and polishing process is composed of the following raw materials in parts by weight: 55 parts of composite abrasive, 3 parts of dispersant, 3 parts of thickener, 2 parts of alkaline regulator and 80 parts of deionized water.
The composite abrasive is a mixture of silicon carbide and boron carbide, wherein the particle size of silicon carbide micro powder is 5-10 mu m, the particle size of boron carbide micro powder is 5-10 mu m, and the silicon carbide micro powder and the boron carbide micro powder are mixed according to the mass ratio of 1: 1.
The dispersant is sodium hexametaphosphate.
The thickening agent is sodium polyacrylate.
The alkaline regulator is calcium hydroxide.
The preparation method of the polishing solution comprises the following steps:
mixing silicon carbide micro powder and boron carbide micro powder according to the mass ratio of 1:1, placing the mixture in a ball mill, adding sodium hexametaphosphate and sodium polyacrylate, adjusting the pH value to 7-8 by calcium hydroxide, carrying out ball milling for 15min, and adding deionized water to dilute the concentration to obtain the silicon carbide/boron carbide composite material.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (5)
1. The polishing solution for the sapphire grinding and polishing process is characterized by comprising the following raw materials in parts by weight: 35-63 parts of composite abrasive, 1-3 parts of dispersant, 1-3 parts of thickener, 1-2 parts of alkaline regulator and 62-85 parts of deionized water; wherein, the compound abrasive is a mixture of two of silicon nitride, silicon carbide, boron nitride and boron carbide.
2. The polishing solution for sapphire grinding and polishing process as claimed in claim 1, wherein the dispersant is potassium tripolyphosphate or sodium hexametaphosphate.
3. The polishing solution for sapphire grinding and polishing process as claimed in claim 1, wherein the thickening agent is sodium polyacrylate or polyacrylamide.
4. The polishing solution for sapphire grinding and polishing process as claimed in claim 1, wherein the alkaline modifier is sodium hydroxide or calcium hydroxide.
5. The preparation method of the polishing solution for the sapphire grinding and polishing process, as recited in claim 1, is characterized in that the raw materials of the composite abrasive are mixed and then placed in a ball mill, a dispersing agent and a thickening agent are added, the pH value is adjusted to 7-8 by an alkaline regulator, the ball milling is carried out for 10-15 min, and deionized water is added to dilute the concentration, so as to obtain the polishing solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910862695.7A CN110591562A (en) | 2019-09-12 | 2019-09-12 | Polishing solution for sapphire grinding and polishing process and preparation method thereof |
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| CN201910862695.7A CN110591562A (en) | 2019-09-12 | 2019-09-12 | Polishing solution for sapphire grinding and polishing process and preparation method thereof |
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| CN110591562A true CN110591562A (en) | 2019-12-20 |
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| CN201910862695.7A Pending CN110591562A (en) | 2019-09-12 | 2019-09-12 | Polishing solution for sapphire grinding and polishing process and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111234706A (en) * | 2020-03-26 | 2020-06-05 | 新乡学院 | Water-based grinding composition and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101016439A (en) * | 2007-02-06 | 2007-08-15 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing pulp for sapphire substrate underlay |
| CN102311717A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | High-hardness micron grinding fluid and preparation method thereof |
| CN104403574A (en) * | 2014-12-16 | 2015-03-11 | 河北工业大学 | Compound abrasive polishing solution for sapphire substrate material and recycling method thereof |
| CN105038605A (en) * | 2015-06-16 | 2015-11-11 | 东莞市中微纳米科技有限公司 | Sapphire coarse grinding fluid |
| CN110076682A (en) * | 2019-05-22 | 2019-08-02 | 大连理工大学 | A kind of Sapphire Substrate cmp method |
-
2019
- 2019-09-12 CN CN201910862695.7A patent/CN110591562A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101016439A (en) * | 2007-02-06 | 2007-08-15 | 中国科学院上海微系统与信息技术研究所 | Chemical mechanical polishing pulp for sapphire substrate underlay |
| CN102311717A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | High-hardness micron grinding fluid and preparation method thereof |
| CN104403574A (en) * | 2014-12-16 | 2015-03-11 | 河北工业大学 | Compound abrasive polishing solution for sapphire substrate material and recycling method thereof |
| CN105038605A (en) * | 2015-06-16 | 2015-11-11 | 东莞市中微纳米科技有限公司 | Sapphire coarse grinding fluid |
| CN110076682A (en) * | 2019-05-22 | 2019-08-02 | 大连理工大学 | A kind of Sapphire Substrate cmp method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111234706A (en) * | 2020-03-26 | 2020-06-05 | 新乡学院 | Water-based grinding composition and preparation method thereof |
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Application publication date: 20191220 |
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