CN110581065A - photoresist removing method and photoresist reproducing method - Google Patents
photoresist removing method and photoresist reproducing method Download PDFInfo
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- CN110581065A CN110581065A CN201910908698.XA CN201910908698A CN110581065A CN 110581065 A CN110581065 A CN 110581065A CN 201910908698 A CN201910908698 A CN 201910908698A CN 110581065 A CN110581065 A CN 110581065A
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- photoresist
- wafer
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- containing gas
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0279—Ionlithographic processes
Abstract
The invention relates to a photoresist removing method and a photoresist reproducing method, which relate to the manufacturing technology of a semiconductor integrated circuit.A photoresist layer is firstly subjected to first plasma etching by using oxygen-containing gas in the photoresist removing process, photoresist with a certain height on the surface of a wafer is removed, the photoresist with the certain height is reserved on the surface of the wafer, then the residual photoresist layer is subjected to second plasma etching by using hydrogen-containing gas, and the residual photoresist layer is completely removed.
Description
Technical Field
The present invention relates to semiconductor integrated circuit manufacturing technologies, and in particular, to a photoresist removing method and a photoresist reworking method.
Background
In the manufacturing process of semiconductor integrated circuits, with the improvement of the integration level of the semiconductor integrated circuits and the development of semiconductor technology, the size of the semiconductor devices is smaller and the complexity thereof is higher, so it is often necessary to fabricate circuit structure patterns (patterns) with extremely fine dimensions on a wafer substrate to form various types of complex semiconductor devices so as to realize the corresponding functions of the integrated circuits.
The current method for forming circuit structure pattern on semiconductor substrate includes:
Step 101, forming a dielectric layer on a wafer substrate.
Step 102, forming a photoresist PR on the dielectric layer.
and 103, sequentially performing exposure, development and cleaning procedures on the PR layer, forming a corresponding mask pattern on the PR layer, and then performing subsequent processes by taking the mask pattern as a mask to manufacture a desired circuit structure pattern on the wafer substrate.
However, in the conventional process, due to the influence of various objective conditions (e.g., changes in environmental conditions, etc.) or subjective conditions (e.g., misoperation, etc.), the step 103 may have some abnormal conditions during the execution process, which may result in forming some unnecessary or abnormal photoresist patterns on the PR layer, thereby adversely affecting the subsequent processes. In the prior art, if the photoresist pattern formed on the PR layer is abnormal, the photoresist needs to be reproduced by removing the previously formed photoresist and then forming a new photoresist, and then a new photoresist pattern needs to be reproduced to solve the problem of abnormal photoresist pattern.
Referring to FIGS. 1a-1c, FIGS. 1a-1c are schematic diagrams illustrating a photoresist rework process in the prior art. As shown in fig. 1a, the wafer surface includes a formed photoresist layer 110; in the prior art, the photoresist layer is plasma etched by using an oxygen-containing gas (e.g., O2, CO2, CO, etc.), so as to remove the photoresist on the wafer surface, as shown in fig. 1 b; a photoresist layer recoating (PR re-coating) process is then performed to form a new photoresist layer 120, as shown in fig. 1 c.
Nitride layers are commonly used materials in semiconductor integrated circuit fabrication processes, such as silicon nitride (SIN), which is often used as a hard mask layerOr gate spacers, such as the nitride layer 130 of fig. 1a, 1b and 1 c. In the case of a nitride layer on the wafer surface, the photoresist layer is plasma etched using an oxygen-containing gas (e.g., O2, CO2, CO, etc.) to remove the photoresist on the nitride layer, and the oxygen reacts with the nitride layer to form an oxide layer 140, such as SiO2, as shown in fig. 1b and 1 c. The oxide layer 140 may affect the subsequent process flow. For example, in the fabrication of semiconductor integrated circuits, phosphoric acid (H) is generally used due to the process requirements that require removal of the nitride layer 1303PO4) Removing the nitride layer 130, however phosphoric acid (H)3PO4) The oxide layer 140 generated during the photoresist layer removing process cannot be removed, which results in that the nitride layer 130 cannot be completely removed, thereby affecting the subsequent process of the semiconductor device, causing defects, and further affecting the yield of the semiconductor device.
Disclosure of Invention
The invention aims to provide a photoresist removing method to avoid defects and further improve the yield of semiconductor devices.
The photoresist removing method provided by the invention comprises the following steps: s1: providing a wafer, and forming a dielectric layer on a wafer substrate; s2: forming a photoresist layer on the dielectric layer; s3: carrying out first plasma etching on the photoresist layer by using oxygen-containing gas so as to remove the photoresist with partial height on the surface of the wafer and reserve the photoresist with certain height on the surface of the wafer; and S4: and performing secondary plasma etching on the photoresist layer by using hydrogen-containing gas so as to remove all the photoresist on the surface of the circle.
Furthermore, the uppermost dielectric layer of the wafer substrate is a nitride layer.
Furthermore, the nitride layer is a silicon nitride layer.
Further, the oxygen-containing gas is O2, CO2, or CO.
Further, the hydrogen-containing gas is H2.
Further, a device structure is included on the wafer substrate, the device structure has a height, and in step S3, the photoresist layer is subjected to a first plasma etching process using an oxygen-containing gas, so as to remove a portion of the photoresist on the surface of the wafer, and the height of the photoresist remaining on the surface of the wafer is greater than the height of the highest device structure on the wafer substrate.
furthermore, after the first plasma etching, the height difference between the height of the photoresist remained on the surface of the wafer and the height of the highest device structure on the wafer substrate is d, and d is between 50 and 100 angstroms.
further, in step S3, the photoresist layer is first plasma etched using an oxygen-containing gas to remove about 70% of the photoresist on the wafer surface and leave about 30% of the photoresist on the wafer surface.
Further, the 70% has a certain error.
Further, the error is within 20%.
further, the error is within 10%.
Further, the error is within 5%.
The invention also provides a photoresist reproduction method, which comprises the following steps: s1: providing a wafer, and forming a dielectric layer on a wafer substrate; s2: forming a photoresist layer on the dielectric layer; s3: carrying out first plasma etching on the photoresist layer by using oxygen-containing gas so as to remove the photoresist on the surface part of the wafer and reserve the photoresist with a certain height on the surface of the wafer; s4: performing secondary plasma etching on the photoresist layer by using gas containing hydrogen so as to remove all photoresist on the surface of the circle; and S5: and performing a photoresist layer recoating process to form a new photoresist layer.
Furthermore, the uppermost dielectric layer of the wafer substrate is a nitride layer.
Furthermore, the nitride layer is a silicon nitride layer.
Further, the oxygen-containing gas is O2, CO2, or CO.
Further, a device structure is included on the wafer substrate, the device structure has a height, and in step S3, the photoresist layer is subjected to a first plasma etching process using an oxygen-containing gas, so as to remove a portion of the photoresist on the surface of the wafer, and the height of the photoresist remaining on the surface of the wafer is greater than the height of the highest device structure on the wafer substrate.
Further, in step S3, the photoresist layer is first plasma etched using an oxygen-containing gas to remove about 70% of the photoresist on the wafer surface and leave about 30% of the photoresist on the wafer surface.
In the photoresist removing process, firstly, oxygen-containing gas is used for carrying out first plasma etching on the photoresist layer to remove photoresist with a certain height on the surface of a wafer, the photoresist with the certain height is reserved on the surface of the wafer, then, hydrogen-containing gas is used for carrying out second plasma etching on the residual photoresist layer to completely remove the residual photoresist layer, so that the advantages of carrying out plasma etching process on the photoresist layer by using the oxygen-containing gas and carrying out plasma etching process on the photoresist layer by using the hydrogen-containing gas are achieved, defects are avoided, and the yield of semiconductor devices is improved.
Drawings
FIGS. 1a-1c are schematic diagrams of a photoresist rework process in the prior art.
FIG. 2 is a flowchart of a photoresist removal method according to an embodiment of the invention.
FIGS. 3a-3c are schematic diagrams of a photoresist removal process according to an embodiment of the invention.
FIG. 4 is a diagram illustrating a photoresist layer after rework according to one embodiment of the invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In an embodiment of the present invention, a method for removing a photoresist is provided, and referring to fig. 2, fig. 2 is a flowchart of the method for removing a photoresist according to an embodiment of the present invention. The photoresist removing method of an embodiment of the invention comprises the following steps: s1: providing a wafer, and forming a dielectric layer on a wafer substrate; s2: forming a photoresist layer on the dielectric layer; s3: carrying out first plasma etching on the photoresist layer by using oxygen-containing gas so as to remove the photoresist with partial height on the surface of the wafer and reserve the photoresist with certain height on the surface of the wafer; and S4: and performing secondary plasma etching on the photoresist layer by using hydrogen-containing gas so as to remove all the photoresist on the surface of the circle.
Specifically, referring to fig. 3a-3c, fig. 3a-3c are schematic diagrams illustrating a photoresist removal process according to an embodiment of the invention. In step S1, please refer to fig. 3a, a wafer is provided, a dielectric layer is formed on the wafer substrate, for example, in an embodiment of the present invention, the uppermost dielectric layer of the wafer substrate is a nitride layer 230, and more specifically, in an embodiment of the present invention, the nitride layer 230 is a silicon nitride (SIN) layer, which is often used as a hard mask layer or a gate spacer. In an embodiment of the invention, a device structure, such as the gate structure 250, is further included on the wafer substrate, and the silicon nitride (SIN) layer is a sidewall of the gate structure 250.
In step S2, referring to fig. 3a, a photoresist layer 210 is formed on the dielectric layer, and for the embodiment where the uppermost dielectric layer of the wafer substrate is a silicon nitride (SIN) layer, the photoresist layer 210 is formed on the silicon nitride (SIN) layer.
In step S3, referring to fig. 3b, the photoresist layer 210 is first plasma etched using an oxygen-containing gas to remove a portion of the photoresist on the surface of the wafer and to leave a certain height of the photoresist on the surface of the wafer, for example, in step S2, a 2500 angstrom photoresist layer 210 is formed on the dielectric layer, then in step S3, the photoresist layer 210 is first plasma etched (also ashing process) using an oxygen-containing gas to remove about 1700 angstrom of the photoresist layer and leave about 800 angstrom of the photoresist layer, i.e., not all the photoresist layer is removed during the first plasma etching, and then in step S4, referring to fig. 3bFigure 3c, the photoresist layer is subjected to a second plasma etch (also called an ashing process) using a hydrogen containing gas to remove all of the photoresist from the wafer surface. Thus, the oxygen-containing gas does not contact the uppermost layer of the wafer substrate to form the nitride layer 230 dielectric layer, thereby preventing the oxygen from reacting with the nitride layer to form an oxide layer 140, such as SiO2, as shown in FIGS. 1b and 1c of the prior art. Further using phosphoric acid (H)3PO4) The nitride layer 230 can be completely removed to prevent defects from occurring, thereby improving the yield of the semiconductor device.
Specifically, in an embodiment of the present invention, the oxygen-containing gas is O2, CO2, or CO.
Specifically, in an embodiment of the present invention, the hydrogen-containing gas is H2.
specifically, in an embodiment of the present invention, the wafer substrate further includes a device structure, the device structure has a height, in step S3, the photoresist layer 210 is subjected to a first plasma etching process using an oxygen-containing gas, so as to remove a portion of the photoresist on the surface of the wafer, and the height of the photoresist remaining on the surface of the wafer is greater than the height of the highest device structure on the wafer substrate, so that the photoresist remaining after the first plasma etching process can cover all the device structures on the wafer substrate, and the oxygen in the first plasma etching process is prevented from reacting with the dielectric layer on the surface of the device structure on the wafer substrate. As shown in fig. 3b, after the first plasma etching is performed, the height difference between the height of the photoresist remaining on the surface of the wafer and the height of the highest device structure on the wafer substrate is d, so as to protect the device structure on the wafer substrate, in an embodiment of the present invention, the height difference d is between 50 angstroms and 100 angstroms.
Specifically, in step S3, in one embodiment of the present invention, the photoresist layer 210 is subjected to a first plasma etching using an oxygen-containing gas, so as to remove about 70% of the photoresist on the wafer surface and leave about 30% of the photoresist on the wafer surface. The embodiment is suitable for the case that the photoresist layer 210 is thick, the etching speed of the plasma etching process performed on the photoresist layer by using the gas containing oxygen is high, however, the gas containing oxygen is easy to react with the dielectric layer on the surface of the wafer substrate to produce the oxide layer, the etching speed of the plasma etching process performed on the photoresist layer by using the gas containing hydrogen is low, impurities are easy to remain on the surface of the wafer, and the gas containing hydrogen is not reacted with the dielectric layer on the surface of the wafer substrate. According to the invention, firstly, oxygen-containing gas is used for carrying out first plasma etching on the photoresist layer to remove the photoresist with a certain height on the surface of the wafer, the photoresist with a certain height is reserved on the surface of the wafer, then hydrogen-containing gas is used for carrying out second plasma etching on the residual photoresist layer to remove all the residual photoresist layer, and thus, the advantages of carrying out plasma etching process on the photoresist layer by using oxygen-containing gas and carrying out plasma etching process on the photoresist layer by using hydrogen-containing gas are achieved. In an embodiment of the present invention, the 70% has a certain error. In an embodiment of the present invention, the error is within 20%. Preferably, the error is within 10%. Preferably, the error is within 5%. Correspondingly, the 30% has a certain error.
In an embodiment of the present invention, a method for photoresist rework is further provided, where the method for photoresist rework includes: s1: providing a wafer, and forming a dielectric layer on a wafer substrate; s2: forming a photoresist layer on the dielectric layer; s3: carrying out first plasma etching on the photoresist layer by using oxygen-containing gas so as to remove the photoresist on the surface part of the wafer and reserve the photoresist with a certain height on the surface of the wafer; s4: performing secondary plasma etching on the photoresist layer by using gas containing hydrogen so as to remove all photoresist on the surface of the circle; and S5: a photoresist layer re-coating (PR re-coating) process is performed to form a new photoresist layer 220.
steps S1, S2, S3 and S4 are as described above and are described in detail herein. For the photoresist reworking method of the present invention, the photoresist on the wafer surface is completely removed by the photoresist removing method composed of steps S1, S2, S3 and S4, and then the photoresist is processed by step S5: referring to fig. 4, a photoresist layer recoating process is performed to form a new photoresist layer 220, and fig. 4 is a schematic diagram illustrating a photoresist layer reworked according to an embodiment of the present invention. And then carrying out subsequent procedures of exposure, development and cleaning to form a corresponding mask pattern on the photoresist layer, and then carrying out subsequent processes by taking the mask pattern as a mask to accurately manufacture a desired circuit structure pattern on the wafer substrate so as to improve the yield of the semiconductor device.
In summary, in the photoresist removing process, firstly, the oxygen-containing gas is used to perform the first plasma etching on the photoresist layer to remove the photoresist with a certain height on the surface of the wafer, and the photoresist with a certain height is retained on the surface of the wafer, and then the hydrogen-containing gas is used to perform the second plasma etching on the remaining photoresist layer to remove all the remaining photoresist layer.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (18)
1. A method for removing photoresist, comprising:
S1: providing a wafer, and forming a dielectric layer on a wafer substrate;
S2: forming a photoresist layer on the dielectric layer;
S3: carrying out first plasma etching on the photoresist layer by using oxygen-containing gas so as to remove the photoresist with partial height on the surface of the wafer and reserve the photoresist with certain height on the surface of the wafer; and
S4: and performing secondary plasma etching on the photoresist layer by using hydrogen-containing gas so as to remove all the photoresist on the surface of the circle.
2. The method of claim 1, wherein the top dielectric layer of the wafer substrate is a nitride layer.
3. The method of claim 2, wherein the nitride layer is a silicon nitride layer.
4. the photoresist removal method of claim 1, wherein the oxygen-containing gas is O2, CO2, or CO.
5. The method of claim 1, wherein the hydrogen-containing gas is H2.
6. The method of claim 1, further comprising a device structure on the wafer substrate, wherein the device structure has a height, and in step S3, the photoresist layer is subjected to a first plasma etching process using an oxygen-containing gas, so as to remove a portion of the photoresist on the surface of the wafer, and the height of the photoresist remaining on the surface of the wafer is greater than the height of the highest device structure on the wafer substrate.
7. the method of claim 6, wherein after the first plasma etch, the height difference between the height of the photoresist remaining on the wafer surface and the height of the highest device structure on the wafer substrate is d, and d is between 50 and 100 angstroms.
8. The method of claim 1, wherein in step S3, the photoresist layer is first plasma etched using an oxygen-containing gas, so as to remove about 70% of the photoresist on the wafer surface and leave about 30% of the photoresist on the wafer surface.
9. the method of claim 8, wherein the 70% error is present.
10. The method of claim 9, wherein the error is within 20%.
11. The method of claim 9, wherein the error is within 10%.
12. The method of claim 9, wherein the error is within 5%.
13. A method of photoresist rework, comprising:
S1: providing a wafer, and forming a dielectric layer on a wafer substrate;
S2: forming a photoresist layer on the dielectric layer;
S3: carrying out first plasma etching on the photoresist layer by using oxygen-containing gas so as to remove the photoresist on the surface part of the wafer and reserve the photoresist with a certain height on the surface of the wafer;
S4: performing secondary plasma etching on the photoresist layer by using gas containing hydrogen so as to remove all photoresist on the surface of the circle; and
S5: and performing a photoresist layer recoating process to form a new photoresist layer.
14. The photoresist reworking method of claim 13, wherein the uppermost dielectric layer of the wafer substrate is a nitride layer.
15. The photoresist rework method of claim 14, wherein the nitride layer is a silicon nitride layer.
16. The photoresist remaking method of claim 13, wherein the oxygen-containing gas is O2, CO2, or CO.
17. The photoresist rework method of claim 13, further comprising a device structure on the wafer substrate, the device structure having a height, wherein in step S3, the photoresist layer is first plasma etched using an oxygen-containing gas to remove a portion of the photoresist on the surface of the wafer, and the height of the photoresist remaining on the surface of the wafer is greater than the height of the highest device structure on the wafer substrate.
18. The photoresist rework method of claim 13, wherein in step S3, the photoresist layer is first plasma etched using an oxygen-containing gas to remove about 70% of the photoresist on the wafer surface and leave about 30% of the photoresist on the wafer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910908698.XA CN110581065A (en) | 2019-09-25 | 2019-09-25 | photoresist removing method and photoresist reproducing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910908698.XA CN110581065A (en) | 2019-09-25 | 2019-09-25 | photoresist removing method and photoresist reproducing method |
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| CN110581065A true CN110581065A (en) | 2019-12-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111308867A (en) * | 2020-02-25 | 2020-06-19 | 上海华力集成电路制造有限公司 | Photoresist stripping and removing method |
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| US20030192856A1 (en) * | 2002-04-16 | 2003-10-16 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
| US20050208756A1 (en) * | 2004-03-16 | 2005-09-22 | Semiconductor Leading Edge Technologies, Inc. | Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device |
| CN1868043A (en) * | 2003-08-11 | 2006-11-22 | 艾克塞利斯技术公司 | Plasma ashing process |
| CN101592873A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Remove the photoresist layer method |
| CN103137440A (en) * | 2011-11-21 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Photoresist removing method |
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2019
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| US20030192856A1 (en) * | 2002-04-16 | 2003-10-16 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
| CN1868043A (en) * | 2003-08-11 | 2006-11-22 | 艾克塞利斯技术公司 | Plasma ashing process |
| US20050208756A1 (en) * | 2004-03-16 | 2005-09-22 | Semiconductor Leading Edge Technologies, Inc. | Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device |
| CN101592873A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | Remove the photoresist layer method |
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| CN111308867A (en) * | 2020-02-25 | 2020-06-19 | 上海华力集成电路制造有限公司 | Photoresist stripping and removing method |
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