CN110578173B - A kind of nonlinear optical crystal strontium lithium silicon sulfur and its preparation method and application - Google Patents
A kind of nonlinear optical crystal strontium lithium silicon sulfur and its preparation method and application Download PDFInfo
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Abstract
本发明提供了一种非线性光学晶体锶锂硅硫及其制备方法与应用,非线性光学晶体锶锂硅硫的化学式为SrLi2SiS4,分子量为257.83,其为无色透明的非中心对称结构单晶,以[LiS4]、[SiS4]和[SrS8]基团组成结构基元。本发明采用高温固相合成方法合成非线性光学晶体锶锂硅硫,其具有优异的光学性能,红外吸收截止边较长,带隙宽,激光损伤阈值高,非线性光学系数大,作为新型中远红外非线性光学晶体在高功率红外激光系统中具有广泛的潜在应用价值。The invention provides a nonlinear optical crystal strontium lithium silicon sulfur and a preparation method and application thereof. The chemical formula of the nonlinear optical crystal strontium lithium silicon sulfur is SrLi 2 SiS 4 , the molecular weight is 257.83, and it is colorless and transparent non-centrosymmetric. Structural single crystal, with [LiS 4 ], [SiS 4 ] and [SrS 8 ] groups as structural units. The present invention adopts a high-temperature solid-phase synthesis method to synthesize nonlinear optical crystal strontium lithium silicon sulfur, which has excellent optical properties, long infrared absorption cut-off edge, wide band gap, high laser damage threshold, and large nonlinear optical coefficient. Infrared nonlinear optical crystals have a wide range of potential applications in high-power infrared laser systems.
Description
技术领域technical field
本发明涉及一种中远红外波段激光倍频晶体,具体地说是涉及一种非线性光学晶体锶锂硅硫及其制备方法与应用。The invention relates to a laser frequency doubling crystal in the mid-far infrared band, in particular to a nonlinear optical crystal strontium lithium silicon sulfur and a preparation method and application thereof.
背景技术Background technique
随着激光器的出现,一系列新奇的光学现象被相继发现,非线性光学效应便是其中之一。1961年,弗兰肯(Franken)把一束红宝石激光照射到石英晶体上,首次发现到非线性光学倍频效应,随即拉开了非线性光学材料研究的序幕。With the advent of lasers, a series of novel optical phenomena have been discovered one after another, one of which is nonlinear optical effects. In 1961, Franken irradiated a beam of ruby laser on a quartz crystal and discovered the frequency doubling effect of nonlinear optics for the first time, which opened the prelude to the research of nonlinear optical materials.
非线性光学效应源于激光与介质的相互作用,当一束具有某种偏振方向的激光按一定入射方向通过一块非线性光学晶体(如AgGaS2)时,该光束的频率将发生变化。当激光在具有非零二阶极化率的介质中传播时,会产生倍频、和频、差频、光参量放大等非线性光学效应。激光作为一种高强度、方向性好的相干单色光源,广泛应用于科研、工业、交通、国防和医疗卫生等相关领域,然而,由于激光发生机理的特殊性,不可能为每一个波长都寻找到一种实用的激光介质,因此,利用非线性光学晶体进行变频以获得宽调谐的各种激光光源已成为激光技术发展的前沿课题。The nonlinear optical effect originates from the interaction between the laser and the medium. When a laser beam with a certain polarization direction passes through a nonlinear optical crystal (such as AgGaS 2 ) in a certain incident direction, the frequency of the beam will change. When the laser propagates in a medium with non-zero second-order polarizability, nonlinear optical effects such as frequency doubling, sum frequency, difference frequency, and optical parametric amplification will occur. As a coherent monochromatic light source with high intensity and good directionality, laser is widely used in scientific research, industry, transportation, national defense, medical and health and other related fields. To find a practical laser medium, the use of nonlinear optical crystals for frequency conversion to obtain various laser light sources with wide tuning has become a frontier topic in the development of laser technology.
非线性光学晶体材料根据其透过波段的范围可分为三大类:中远红外非线性光学材料、可见光及近红外波段非线性光学材料和紫外及深紫外波段非线性光学材料。目前主要的非线性光学材料主要包括KDP(KH2PO4)、BBO(β-BaB2O4)、LBO(LiB3O5)和AGS(AgGaS2)等。红外光源特别是中远红外光源输出需要较高能量的泵浦源,提高激光损伤阈值能够克服高功率激光下晶体损伤问题,大大提高输出功率。通常,晶体的带隙大小是决定激光损伤阈值的重要因素,带隙越大,一般激光损伤阈值越高。现今实用的红外非线性光学材料大多是ABC2型的黄铜矿类,如AgGaS2和ZnGeP2等商业化的晶体,但是该类晶体存在一些严重的不足,如较低的激光损伤阈值、对近红外激光(如Nd:YAG 1064 nm)的双光子吸收问题、严重的各向异性热膨胀导致不易得到大尺寸、高质量单晶等,因此,如何制得具有高激光损伤阈值的中远红外非线性光学晶体是当前的研究热点之一。Nonlinear optical crystal materials can be divided into three categories according to the range of their transmission bands: mid- and far-infrared nonlinear optical materials, visible light and near-infrared band nonlinear optical materials, and ultraviolet and deep ultraviolet band nonlinear optical materials. At present, the main nonlinear optical materials mainly include KDP (KH 2 PO 4 ), BBO (β-BaB 2 O 4 ), LBO (LiB 3 O 5 ) and AGS (AgGaS 2 ). The output of infrared light sources, especially mid- and far-infrared light sources, requires higher-energy pump sources. Increasing the laser damage threshold can overcome the problem of crystal damage under high-power lasers and greatly improve the output power. Generally, the size of the band gap of the crystal is an important factor in determining the laser damage threshold. The larger the band gap, the higher the laser damage threshold. Most of the practical infrared nonlinear optical materials today are ABC 2 chalcopyrites, such as commercial crystals such as AgGaS 2 and ZnGeP 2 , but these crystals have some serious deficiencies, such as low laser damage threshold, low laser damage The two-photon absorption problem of near-infrared lasers (such as Nd:YAG 1064 nm) and the severe anisotropic thermal expansion make it difficult to obtain large-sized, high-quality single crystals, etc. Therefore, how to prepare mid-to-far-infrared nonlinearity with high laser damage threshold Optical crystals are one of the current research hotspots.
发明内容SUMMARY OF THE INVENTION
本发明的目的之一是提供一种锶锂硅硫化合物。One of the objects of the present invention is to provide a strontium lithium silicon sulfur compound.
本发明的目的之二是提供一种锶锂硅硫化合物的制备方法。The second purpose of the present invention is to provide a preparation method of a strontium lithium silicon sulfur compound.
本发明的目的之三是提供一种非线性光学晶体锶锂硅硫。The third object of the present invention is to provide a nonlinear optical crystal strontium lithium silicon sulfur.
本发明的目的之四是提供一种非线性光学晶体锶锂硅硫的制备方法。The fourth object of the present invention is to provide a method for preparing a nonlinear optical crystal strontium lithium silicon sulfur.
本发明的目的之五是提供一种非线性光学晶体锶锂硅硫的应用。The fifth object of the present invention is to provide the application of a nonlinear optical crystal strontium lithium silicon sulfur.
本发明的目的之一是这样实现的:One of the objects of the present invention is achieved in this way:
一种锶锂硅硫化合物,化学式为SrLi2SiS4,分子量为257.83,其为无色透明的锶锂硅硫纯样。A strontium lithium silicon sulfur compound, the chemical formula is SrLi 2 SiS 4 , the molecular weight is 257.83, and it is a colorless and transparent pure strontium lithium silicon sulfur compound.
进一步地,该锶锂硅硫化合物是锶锂硅硫晶体,为非中心对称结构单晶,属于四方晶系,空间群为I-42m,晶胞参数为a = b = 6.469(3) Å,c = 7.689(7) Å,α = β = γ =90°、Z = 2,单胞体积V = 321.8(4) Å3。Further, the strontium-lithium-silicon-sulfur compound is a strontium-lithium-silicon-sulfur crystal, which is a non-centrosymmetric single crystal, belongs to the tetragonal crystal system, the space group is I -42 m , and the unit cell parameter is a = b = 6.469(3) Å , c = 7.689(7) Å, α = β = γ = 90°, Z = 2, unit cell volume V = 321.8(4) Å 3 .
具体地,锶锂硅硫晶体结构中Sr原子、Li原子、Si原子和S原子的化合价分别为+2、+1、+4和-2价;Li原子与邻近四个S原子形成[LiS4]四面体结构;Si原子也与其临近的四个S原子形成[SiS4]四面体;[LiS4]四面体以共顶点的连接方式形成层状结构,层与层之间由[SiS4]四面体连接形成环状孔道;Sr原子镶嵌在[LiS4]与[SiS4]四面体链接所形成的环状孔道中,形成8配位的[SrS8]十二面体。Specifically, the valences of Sr atom, Li atom, Si atom and S atom in the strontium lithium silicon sulfur crystal structure are +2, +1, +4 and -2, respectively; Li atom and four adjacent S atoms form [LiS 4 ] Tetrahedral structure; Si atom also forms [SiS 4 ] tetrahedron with its four adjacent S atoms ; The tetrahedrons are connected to form annular channels; Sr atoms are embedded in the annular channels formed by [LiS 4 ] and [SiS 4 ] tetrahedrons to form 8-coordinated [SrS 8 ] dodecahedrons.
更进一步地,该锶锂硅硫晶体为中远红外非线性光学晶体,其带隙3.94 eV,红外截止边~20 μm,激光损伤阈值约为AgGaS2的21倍,其非线性光学效应强:在2.09 μm基频光照射下,在颗粒度为200~250 μm范围内,晶体粉末样品的倍频能力为商业化晶体AgGaS2的0.4倍,约为KH2PO4(KDP)的13倍。Furthermore, the strontium-lithium-silicon-sulfur crystal is a mid-to-far-infrared nonlinear optical crystal with a band gap of 3.94 eV, an infrared cutoff edge of ~20 μm, a laser damage threshold of about 21 times that of AgGaS 2 , and a strong nonlinear optical effect: in the Under the irradiation of 2.09 μm fundamental frequency light, in the particle size range of 200-250 μm, the frequency doubling ability of the crystal powder sample is 0.4 times that of commercial crystal AgGaS 2 and about 13 times that of KH 2 PO 4 (KDP).
本发明的目的之二是这样实现的:The second purpose of the present invention is achieved in this way:
一种锶锂硅硫化合物的制备方法,包括如下步骤:A preparation method of strontium lithium silicon sulfur compound, comprising the following steps:
(a)将摩尔比为1∶1~5∶1的SrS、Li2S和SiS2原料混合均匀后放入石墨坩埚中,再装入石英玻璃管中,并在真空度为10-5~10-1 Pa的条件下抽真空后封口;(a) Mix the raw materials of SrS, Li 2 S and SiS 2 with a molar ratio of 1:1~5:1 and put them into a graphite crucible, then put them into a quartz glass tube, and put them in a vacuum degree of 10 -5 ~ Under the condition of 10 -1 Pa, vacuumize and seal;
(b)将步骤(a)中密封好的石英玻璃管放入高温烧结炉中,升温至400~700 ℃,保温7~15 h;再升温至750~950 ℃,保温70~110 h;之后,冷却降至室温,即得锶锂硅硫化合物。(b) Put the sealed quartz glass tube in step (a) into a high-temperature sintering furnace, heat it up to 400~700 °C, and keep it for 7~15 h; then heat it up to 750~950 °C, and keep it for 70~110 h; then , cooled to room temperature to obtain strontium lithium silicon sulfur compound.
步骤(a)中,在水含量和氧气含量为0.01~0.2 ppm的气密容器内称量SrS、Li2S和SiS2原料;优选地,该气密容器为充有惰性气体优选氩气的手套箱。In step (a), the raw materials of SrS, Li 2 S and SiS 2 are weighed in an airtight container with a water content and an oxygen content of 0.01 to 0.2 ppm; preferably, the airtight container is filled with an inert gas, preferably argon. glove box.
步骤(b)中,优选地,以20~40 ℃/h的升温速率升温至400~700 ℃;优选地,以25~40 ℃/h的升温速率升温至750~950 ℃;优选地,以2~7 ℃/h的速率冷却降至室温。In step (b), preferably, the temperature is raised to 400-700°C at a heating rate of 20-40°C/h; preferably, the temperature is raised to 750-950°C at a heating rate of 25-40°C/h; Cool down to room temperature at a rate of 2 to 7 °C/h.
本发明的目的之三是这样实现的:The third purpose of the present invention is achieved in this way:
一种非线性光学晶体锶锂硅硫,化学式为SrLi2SiS4,分子量为257.83,其为无色透明的非中心对称结构单晶,空间群为I-42m,晶胞参数为a = b = 6.469(3) Å,c = 7.689(7) Å,α = β = γ = 90°、Z = 2,单胞体积V = 321.8(4) Å3。A nonlinear optical crystal strontium lithium silicon sulfur, the chemical formula is SrLi 2 SiS 4 , the molecular weight is 257.83, it is a colorless and transparent non-centrosymmetric single crystal, the space group is I -42 m , and the unit cell parameter is a = b = 6.469(3) Å, c = 7.689(7) Å, α = β = γ = 90°, Z = 2, unit cell volume V = 321.8(4) Å 3 .
进一步地,非线性光学晶体锶锂硅硫属于四方晶系,晶体结构中Sr原子、Li原子、Si原子和S原子的化合价分别为+2、+1、+4和-2价;该晶体以[LiS4]、[SiS4]和[SrS8]基团组成结构基元,其中,Li原子与邻近四个S原子形成[LiS4]四面体结构;Si原子也与其邻近的四个S原子形成[SiS4]四面体;[LiS4]四面体以共顶点的连接方式形成层状结构,层与层之间由[SiS4]四面体连接形成环状孔道;Sr原子镶嵌在[LiS4]与[SiS4]四面体链接所形成的环状孔道中,形成8配位的[SrS8]十二面体。Further, the nonlinear optical crystal strontium lithium silicon sulfur belongs to the tetragonal crystal system, and the valences of Sr atom, Li atom, Si atom and S atom in the crystal structure are +2, +1, +4 and -2 respectively; [LiS 4 ], [SiS 4 ] and [SrS 8 ] groups constitute structural elements, in which the Li atom and the adjacent four S atoms form a [LiS 4 ] tetrahedral structure; the Si atom also forms a [LiS 4 ] tetrahedral structure with its adjacent four S atoms [SiS 4 ] tetrahedron is formed; [LiS 4 ] tetrahedron is connected to form a layered structure with a common vertex, and the layers are connected by [SiS 4 ] tetrahedron to form a ring channel; Sr atoms are embedded in [LiS 4 ] ] and [SiS 4 ] tetrahedron linked to form a ring channel, the formation of 8-coordinated [SrS 8 ] dodecahedron.
更进一步地,该非线性光学晶体锶锂硅硫为中远红外非线性光学晶体,其带隙为3.94 eV,红外截止边~20 μm,激光损伤阈值约为AgGaS2的21倍,非线性光学效应强:在2.09μm基频光照射下,在颗粒度为200~250 μm范围内,晶体粉末样品的倍频能力为商业化晶体AgGaS2的0.4倍,约为KH2PO4(KDP)的13倍。Furthermore, the nonlinear optical crystal strontium lithium silicon sulfur is a mid-to-far infrared nonlinear optical crystal with a band gap of 3.94 eV, an infrared cutoff edge of ~20 μm, a laser damage threshold of about 21 times that of AgGaS 2 , and a nonlinear optical effect. Strong: Under the irradiation of 2.09 μm fundamental frequency light, the frequency doubling ability of the crystal powder sample is 0.4 times that of commercial crystal AgGaS 2 in the particle size range of 200~250 μm, about 13 times that of KH 2 PO 4 (KDP) times.
本发明的目的之四是这样实现的:The fourth purpose of the present invention is achieved in this way:
前述非线性光学晶体锶锂硅硫的制备方法,包括如下步骤:The preparation method of the aforementioned nonlinear optical crystal strontium lithium silicon sulfur, comprising the following steps:
(a)将摩尔比为1∶1~5∶1的SrS、Li2S和SiS2原料混合均匀后放入石墨坩埚中,再装入石英玻璃管中,并在真空度为10-5~10-1 Pa的条件下抽真空后封口;(a) Mix the raw materials of SrS, Li 2 S and SiS 2 with a molar ratio of 1:1~5:1 and put them into a graphite crucible, then put them into a quartz glass tube, and put them in a vacuum degree of 10 -5 ~ Under the condition of 10 -1 Pa, vacuumize and seal;
(b)将步骤(a)中密封好的石英玻璃管放入高温烧结炉中,升温至400~700 ℃,保温7~15 h;再升温至750~950 ℃,保温70~110 h;之后,冷却降至室温,即得非线性光学晶体锶锂硅硫。(b) Put the sealed quartz glass tube in step (a) into a high-temperature sintering furnace, heat it up to 400~700 °C, and keep it for 7~15 h; then heat it up to 750~950 °C, and keep it for 70~110 h; then , and cooled to room temperature to obtain nonlinear optical crystal strontium lithium silicon sulfur.
步骤(a)中,在水含量和氧气含量为0.01~0.2 ppm的气密容器内称量SrS、Li2S和SiS2原料;优选地,该气密容器为充有惰性气体优选氩气的手套箱。In step (a), the raw materials of SrS, Li 2 S and SiS 2 are weighed in an airtight container with a water content and an oxygen content of 0.01 to 0.2 ppm; preferably, the airtight container is filled with an inert gas, preferably argon. glove box.
步骤(b)中,优选地,以20~40 ℃/h的升温速率升温至400~700 ℃;优选地,以25~40 ℃/h的升温速率升温至750~950 ℃;优选地,以2~7 ℃/h的速率冷却降至室温。In step (b), preferably, the temperature is raised to 400-700°C at a heating rate of 20-40°C/h; preferably, the temperature is raised to 750-950°C at a heating rate of 25-40°C/h; Cool down to room temperature at a rate of 2 to 7 °C/h.
本发明的目的之五是这样实现的:The fifth purpose of the present invention is achieved in this way:
前述非线性光学晶体锶锂硅硫在制备中远红外波段激光倍频晶体、红外通讯器件及红外激光制导器件中的应用。The application of the aforementioned nonlinear optical crystal strontium lithium silicon sulfur in the preparation of mid- and far-infrared band laser frequency doubling crystals, infrared communication devices and infrared laser guidance devices.
本发明采用高温固相合成方法成功制备得到一种新化合物锶锂硅硫及中远红外非线性光学晶体锶锂硅硫,该晶体以[LiS4]、[SiS4]和[SrS8]基团组成结构基元,具有优异的光学性能,其红外吸收截止边较长,带隙宽,激光损伤阈值高,非线性光学系数大。作为新型中远红外非线性光学晶体,在高功率红外激光系统中具有广泛的潜在应用价值。The invention adopts a high-temperature solid-phase synthesis method to successfully prepare a new compound strontium lithium silicon sulfur and a mid-far infrared nonlinear optical crystal strontium lithium silicon sulfur, the crystal is composed of [LiS 4 ], [SiS 4 ] and [SrS 8 ] groups The constituent structural element has excellent optical properties, long infrared absorption cut-off edge, wide band gap, high laser damage threshold, and large nonlinear optical coefficient. As a new type of mid- and far-infrared nonlinear optical crystals, it has a wide range of potential applications in high-power infrared laser systems.
附图说明Description of drawings
图1是非线性光学晶体锶锂硅硫的粉末XRD图谱,其中,曲线a为实验值,曲线b为理论值。FIG. 1 is the powder XRD pattern of the nonlinear optical crystal strontium lithium silicon sulfur, wherein the curve a is the experimental value, and the curve b is the theoretical value.
图2是非线性光学晶体锶锂硅硫的结构示意图。FIG. 2 is a schematic diagram of the structure of the nonlinear optical crystal strontium lithium silicon sulfur.
图3是非线性光学晶体锶锂硅硫的带隙图。Figure 3 is a band gap diagram of the nonlinear optical crystal strontium lithium silicon sulfur.
图4是非线性光学晶体锶锂硅硫的红外光谱图。FIG. 4 is an infrared spectrum of the nonlinear optical crystal strontium lithium silicon sulfur.
图5是非线性光学晶体锶锂硅硫作为倍频晶体应用时,非线性光学系统的示意图,其中,1、激光器,2、全聚透镜,3、锶锂硅硫晶体粉末,4、出射光束,5、滤波片。Figure 5 is a schematic diagram of the nonlinear optical system when the nonlinear optical crystal strontium lithium silicon sulfur is used as a frequency doubling crystal, wherein, 1, laser, 2, all-converging lens, 3, strontium lithium silicon sulfur crystal powder, 4, outgoing beam, 5. Filters.
图6是非线性光学晶体锶锂硅硫的倍频强度与样品颗粒度曲线图。Fig. 6 is a graph showing the frequency doubling intensity of the nonlinear optical crystal strontium lithium silicon sulfur and the particle size of the sample.
图7是对比例1制备的非线性光学晶体锶锂硅硫的粉末XRD图谱,其中,曲线a为实验值,曲线b为理论值。7 is the powder XRD pattern of the nonlinear optical crystal strontium lithium silicon sulfur prepared in Comparative Example 1, wherein the curve a is the experimental value, and the curve b is the theoretical value.
具体实施方式Detailed ways
下面结合实施例对本发明做进一步的阐述,下述实施例仅作为说明,并不以任何方式限制本发明的保护范围。The present invention will be further described below in conjunction with the examples, and the following examples are only for illustration and do not limit the protection scope of the present invention in any way.
在下述实施例中未详细描述的过程和方法是本领域公知的常规方法,实施例中所用试剂均为分析纯或化学纯,且均可市购或通过本领域普通技术人员熟知的方法制备。下述实施例均实现了本发明的目的。The processes and methods not described in detail in the following examples are conventional methods well known in the art. The reagents used in the examples are all analytically pure or chemically pure, and can be purchased commercially or prepared by methods well known to those of ordinary skill in the art. The following embodiments all achieve the purpose of the present invention.
实施例1Example 1
在水含量和氧气含量为0.01 ppm、充有惰性气体氩气的手套箱内称量起始原料0.119 g SrS、0.046 g Li2S和0.092 g SiS2,三者摩尔比为1∶1∶1,将所称量的原料在研钵中研磨均匀,之后放入干净的石墨坩埚中,再装入长为20 cm、直径为10 mm的石英玻璃管中,将装有原料的石英玻璃管在真空度为10-3 Pa的条件下抽真空后封口;将封好的石英玻璃管以温度 30℃/h的升温速率从室温升至 400 ℃,保温 10 h,再以温度 30 ℃/h升温至800 ℃,保温 80 h,原料组合物中各成分之间反应得到化合物;最后以温度5℃/h的速率冷却降至室温,取出样品放入研钵中研磨,即得到无色透明小颗粒SrLi2SiS4粉末。The starting materials 0.119 g SrS, 0.046 g Li 2 S and 0.092 g SiS 2 were weighed in a glove box with 0.01 ppm water and oxygen content and filled with inert gas argon in a molar ratio of 1:1:1 , grind the weighed raw material evenly in a mortar, then put it into a clean graphite crucible, and then put it into a quartz glass tube with a length of 20 cm and a diameter of 10 mm. The sealed quartz glass tube was raised from room temperature to 400 °C at a heating rate of 30 °C/h, kept for 10 h , and then heated at a temperature of 30 °C/h. The temperature was raised to 800 °C, and the temperature was kept for 80 h. The various components in the raw material composition reacted to obtain the compound; finally, the temperature was cooled to room temperature at a rate of 5 °C/h, and the sample was taken out and ground in a mortar to obtain a colorless and transparent small Granular SrLi 2 SiS 4 powder.
对得到的锶锂硅硫粉末进行粉末X射线衍射分析,所得X射线衍射谱图与用单晶结构解析的SrLi2SiS4理论X射线谱图的结果如图1所示。从图1中看出,实验值与用单晶结构解析的SrLi2SiS4理论X射线谱图的理论值相吻合,表明该晶体为纯相锶锂硅硫。The obtained strontium lithium silicon sulfur powder is subjected to powder X-ray diffraction analysis, and the results of the obtained X-ray diffraction spectrum and the SrLi 2 SiS 4 theoretical X-ray spectrum analyzed by the single crystal structure are shown in FIG. 1 . It can be seen from Fig. 1 that the experimental values agree with the theoretical values of the theoretical X-ray spectrum of SrLi 2 SiS 4 analyzed by the single crystal structure, indicating that the crystal is pure phase strontium lithium silicon sulfur.
该晶体的结构示意图如图2所示,晶体结构中Sr原子、Li原子、Si原子和S原子的化合价分别为+2、+1、+4和-2价;以[LiS4]、[SiS4]和[SrS8]基团组成结构基元:Li原子与邻近四个S原子形成[LiS4]四面体结构;Si原子也与其临近的四个S原子形成[SiS4]四面体;[LiS4]四面体以共顶点的连接方式形成层状结构,层与层之间由[SiS4]四面体连接形成环状孔道;Sr原子镶嵌在[LiS4]与[SiS4]四面体链接所形成的环状孔道中,形成8配位的[SrS8]十二面体。The structural schematic diagram of the crystal is shown in Figure 2. The valences of Sr atom, Li atom, Si atom and S atom in the crystal structure are +2, +1, +4 and -2 respectively; 4 ] and [SrS 8 ] groups form structural units: Li atom forms [LiS 4 ] tetrahedral structure with four adjacent S atoms; Si atom also forms [SiS 4 ] tetrahedron with its adjacent four S atoms; [ LiS 4 ] tetrahedrons form a layered structure in a common vertex connection, and the layers are connected by [SiS 4 ] tetrahedrons to form annular channels; Sr atoms are embedded in [LiS 4 ] and [SiS 4 ] tetrahedral links In the formed annular channel, an 8-coordinated [SrS 8 ]dodecahedron is formed.
采用紫外-可见-近红外漫反射光谱仪测定所得锶锂硅硫晶体的带隙,结果如图3所示。从图中可以得出,非线性光学晶体锶锂硅硫的带隙为3.94 eV,相比于硫镓银(AgGaS2)晶体的带隙2.64 eV,该化合物具有的带隙更宽。The band gap of the obtained strontium lithium silicon sulfur crystal was measured by ultraviolet-visible-near-infrared diffuse reflectance spectrometer, and the results are shown in Fig. 3. It can be concluded from the figure that the band gap of the nonlinear optical crystal strontium lithium silicon sulfur is 3.94 eV, which is wider than that of the silver sulfur gallium (AgGaS 2 ) crystal, which is 2.64 eV.
对所得锶锂硅硫晶体进行红外光谱表征,所得结果如图4所示。从图中可以看出,非线性光学晶体锶锂硅硫的红外吸收截止边较长。The obtained strontium-lithium-silicon-sulfur crystals were characterized by infrared spectroscopy, and the results obtained are shown in FIG. 4 . It can be seen from the figure that the infrared absorption cut-off edge of the nonlinear optical crystal strontium lithium silicon sulfur is longer.
实施例2Example 2
在水含量和氧气含量为0.01 ppm、充有惰性气体氩气的手套箱内称量起始原料SrS:Li2S:SiS2,三者摩尔比为1∶2∶1,在研钵中研磨均匀后放入干净的石墨坩埚中,装入长为20 cm、直径为10 mm的石英玻璃管中,将装有原料的石英玻璃管在真空度为10-3 Pa的条件下抽真空后封口;然后将封好的石英玻璃管以温度20 ℃/h的升温速率从室温升至400℃,保温7 h,再以温度30℃/h升温至750 ℃,保温70 h;最后以温度2 ℃/h的速率冷却降至室温,取出石墨坩埚,得到无色透明小颗粒SrLi2SiS4单晶,通过单晶X射线衍射分析,表明该晶体为锶锂硅硫晶体。The starting material SrS: Li2S : SiS2 was weighed in a glove box with a water and oxygen content of 0.01 ppm and filled with an inert gas argon in a molar ratio of 1:2:1 and ground in a mortar After uniform, put it into a clean graphite crucible, put it into a quartz glass tube with a length of 20 cm and a diameter of 10 mm, and seal the quartz glass tube containing the raw materials under the condition of vacuum degree of 10 -3 Pa. ; then the sealed quartz glass tube was raised from room temperature to 400 °C at a heating rate of 20 °C/h, held for 7 h, then heated to 750 °C at a temperature of 30 °C/h, and held for 70 h; finally, the temperature was 2 The rate of ℃/h was cooled to room temperature, the graphite crucible was taken out, and a colorless and transparent small particle SrLi 2 SiS 4 single crystal was obtained. The single crystal X-ray diffraction analysis showed that the crystal was a strontium lithium silicon sulfur crystal.
实施例3Example 3
在水含量和氧气含量为0.05 ppm、充有惰性气体氩气的手套箱内称量起始原料SrS:Li2S:SiS2摩尔比为1∶3∶1,在研钵中研磨均匀后放入干净的石墨坩埚中,装入长为20cm、直径为10 mm的石英玻璃管中,将装有原料的石英玻璃管在真空度为10-3 Pa的条件下抽真空后封口;然后将封好的石英玻璃管以温度40 ℃/h的升温速率从室温升至600 ℃,保温10 h,再以温度30 ℃/h升温至900 ℃,保温80 h;最后以温度4 ℃/h的速率冷却降至室温,取出石墨坩埚,得到无色透明小颗粒SrLi2SiS4单晶。The starting material SrS: Li2S : SiS2 molar ratio was weighed in a glove box with water content and oxygen content of 0.05 ppm and filled with inert gas argon to be 1:3:1, and ground in a mortar and uniform, and then put Put it into a clean graphite crucible, put it into a quartz glass tube with a length of 20 cm and a diameter of 10 mm, and vacuumize the quartz glass tube containing the raw materials under the condition of a vacuum degree of 10 -3 Pa and seal it; The good quartz glass tube was heated from room temperature to 600 °C at a heating rate of 40 °C/h, held for 10 h, then heated to 900 °C at a temperature of 30 °C/h, and held for 80 h; finally, the temperature was 4 °C/h. The rate was cooled down to room temperature, and the graphite crucible was taken out to obtain a colorless and transparent small particle SrLi 2 SiS 4 single crystal.
实施例4Example 4
在水含量和氧气含量为0.15 ppm、充有惰性气体氩气的手套箱内称量起始原料SrS:Li2S:SiS2摩尔比为1∶4∶1,在研钵中研磨均匀后放入干净的石墨坩埚中,装入长为20cm、直径为10 mm的石英玻璃管中,将装有原料的石英玻璃管在真空度为10-2 Pa的条件下抽真空后封口; 然后将封好的石英玻璃管以温度38 ℃/h的升温速率从室温升至600 ℃,保温15 h,再以温度40 ℃/h升温至900 ℃保温100 h;最后以温度6.5 ℃/h的速率冷却降至室温,取出石墨坩埚,得到无色透明小颗粒SrLi2SiS4单晶。The starting material SrS: Li2S : SiS2 molar ratio was weighed in a glove box with water content and oxygen content of 0.15 ppm and filled with inert gas argon to be 1:4:1, ground in a mortar and evenly placed Put it into a clean graphite crucible, put it into a quartz glass tube with a length of 20 cm and a diameter of 10 mm, and vacuumize the quartz glass tube containing the raw materials under the condition of a vacuum degree of 10 -2 Pa and seal it; The good quartz glass tube was heated from room temperature to 600 °C at a heating rate of 38 °C/h, kept for 15 h, and then heated to 900 °C at a temperature of 40 °C/h for 100 h; finally, the temperature was 6.5 °C/h. Cool down to room temperature, take out the graphite crucible, and obtain a colorless and transparent small particle SrLi 2 SiS 4 single crystal.
实施例5Example 5
在水含量和氧气含量为0.2 ppm、充有惰性气体氩气的手套箱内称量起始原料SrS:Li2S:SiS2摩尔比为1∶5∶1,在研钵中研磨均匀后放入干净的石墨坩埚中,装入长为20cm、直径为10 mm的石英玻璃管中,将装有原料的石英玻璃管在真空度为10-1Pa的条件下抽真空后封口;然后将封好的石英玻璃管以温度35 ℃/h的升温速率从室温升至650 ℃,保温15 h,再以温度35 ℃/h升温至950 ℃,保温110 h;最后以温度7 ℃/h的速率冷却降至室温,取出石墨坩埚,得到无色透明小颗粒SrLi2SiS4单晶。The starting material SrS: Li2S : SiS2 molar ratio was weighed in a glove box with water content and oxygen content of 0.2 ppm and filled with inert gas argon to be 1:5:1, ground in a mortar and evenly placed Put it into a clean graphite crucible, put it into a quartz glass tube with a length of 20 cm and a diameter of 10 mm, vacuumize the quartz glass tube containing the raw materials under the condition of vacuum degree of 10 -1 Pa, and seal it; The good quartz glass tube was heated from room temperature to 650 °C at a heating rate of 35 °C/h, held for 15 h, then heated to 950 °C at a temperature of 35 °C/h, and held for 110 h; finally, the temperature was 7 °C/h. The rate was cooled down to room temperature, and the graphite crucible was taken out to obtain a colorless and transparent small particle SrLi 2 SiS 4 single crystal.
实施例6Example 6
图5为非线性光学晶体锶锂硅硫作为倍频晶体应用时,非线性光学系统的典型示意图。按照图5所示光学系统,将实施例1~5中所得的任意一种锶锂硅硫中远红外非线性光学晶体安置在锶锂硅硫晶体粉末3的位置上,在室温下,用调Q(Ho:Tm:Cr:YAG)激光器1发出波长为2090 nm的红外光束输出作为光源,经全聚透镜2射入锶锂硅硫非线性光学晶体,产生波长为1045 nm的倍频光,出射光束4含有波长为2090 nm的红外光和1045 nm的光,经滤波片5滤去后得到波长为1045 nm的倍频光。Figure 5 is a typical schematic diagram of a nonlinear optical system when the nonlinear optical crystal strontium lithium silicon sulfur is used as a frequency doubling crystal. According to the optical system shown in Fig. 5, any kind of strontium lithium silicon sulfur mid-far infrared nonlinear optical crystal obtained in Examples 1 to 5 is placed on the position of the strontium lithium silicon
测量非线性光学晶体锶锂硅硫的倍频强度与样品颗粒度之间的关系,以同等颗粒度(粒度范围 200~250 μm)的AgGaS2晶体作为对照,所得结果如图6所示。从图6中可以看出,在同等颗粒度条件下,非线性光学晶体锶锂硅硫输出的强度是AgGaS2晶体的0.4倍,约为KDP晶体的13倍。The relationship between the frequency doubling intensity of the nonlinear optical crystal strontium lithium silicon sulfur and the particle size of the sample was measured, and the AgGaS 2 crystal with the same particle size (particle size range of 200-250 μm) was used as the control, and the obtained results are shown in Figure 6. It can be seen from Figure 6 that under the same particle size, the output intensity of the nonlinear optical crystal strontium lithium silicon sulfur is 0.4 times that of the AgGaS crystal, and about 13 times that of the KDP crystal.
同时,采用 1064 nm激光器照射锶锂硅硫和AgGaS2微晶样品,观察样品表面颜色变化来判断晶体是否损伤,测量非线性光学晶体锶锂硅硫和AgGaS2晶体的激光损伤阈值,所得结果如表1所示。At the same time, a 1064 nm laser was used to irradiate the strontium lithium silicon sulfur and AgGaS 2 microcrystalline samples, and the color changes on the surface of the samples were observed to determine whether the crystals were damaged, and the laser damage thresholds of the nonlinear optical crystals strontium lithium silicon sulfur and AgGaS 2 crystals were measured. shown in Table 1.
表1 SrLi2SiS4和AgGaS2(作为参比)激光损伤阈值比较Table 1 Comparison of laser damage thresholds between SrLi 2 SiS 4 and AgGaS 2 (as a reference)
*AGS = AgGaS2 *AGS = AgGaS 2
从表1可以看出,在1064 nm激光器照射下,非线性光学晶体锶锂硅硫粉末样品展现出了高的激光损伤阈值,约为AgGaS2晶体的21倍,因此,锶锂硅硫晶体具有优良的光学性能,使其在高功率激光系统中具有更广的潜在应用价值。It can be seen from Table 1 that under the irradiation of 1064 nm laser, the nonlinear optical crystal strontium-lithium-silicon-sulfur powder sample exhibits a high laser damage threshold, which is about 21 times that of the AgGaS crystal. Therefore, the strontium-lithium-silicon-sulfur crystal has The excellent optical properties make it have wider potential application value in high-power laser systems.
对比例1Comparative Example 1
在水含量和氧气含量为 0.01 ppm、充有惰性气体氩气的手套箱内称量起始原料0.119 g SrS、0.321 g Li2S和 0.092 g SiS2,三者摩尔比为1∶7∶1,将所称量的原料在研钵中研磨均匀,之后放入干净的石墨坩埚中,再装入长为20 cm、直径为10 mm的石英玻璃管中,将装有原料的石英玻璃管在真空度为 10-3 Pa的条件下抽真空后封口;将封好的石英玻璃管以温度 30 ℃/h的升温速率从室温升至 400 ℃,保温 10 h,再以温度 30 ℃/h升温至 800℃,保温80 h,原料组合物中各成分之间反应得到化合物;最后以温度 5 ℃/h的速率冷却降至室温,取出样品放入研钵中研磨,即得到SrLi2SiS4粉末。The starting materials 0.119 g SrS, 0.321 g Li 2 S and 0.092 g SiS 2 were weighed in a glove box with 0.01 ppm water and oxygen content and filled with inert gas argon in a molar ratio of 1:7:1 , grind the weighed raw material evenly in a mortar, then put it into a clean graphite crucible, and then put it into a quartz glass tube with a length of 20 cm and a diameter of 10 mm. The sealed quartz glass tube was raised from room temperature to 400 °C at a heating rate of 30 °C/h, kept for 10 h , and then heated at a temperature of 30 °C/h. The temperature was raised to 800 °C, and the temperature was kept for 80 h. The various components in the raw material composition reacted to obtain the compound; finally, the temperature was cooled to room temperature at a rate of 5 °C/h, and the sample was taken out and ground in a mortar to obtain SrLi 2 SiS 4 powder.
将对比例1所制备的锶锂硅硫进行粉末XRD表征,所得结果如图 7 所示。从图 7中可以看出,在对比例1所得的锶锂硅硫晶体中存在Li4SiS4杂质。The strontium lithium silicon sulfur prepared in Comparative Example 1 was characterized by powder XRD, and the obtained results are shown in FIG. 7 . It can be seen from FIG. 7 that Li 4 SiS 4 impurities are present in the strontium lithium silicon sulfur crystal obtained in Comparative Example 1.
将对比例1所制备的锶锂硅硫晶体进行光学性能测试,所得结果如表2所示。The optical properties of the strontium-lithium-silicon-sulfur crystal prepared in Comparative Example 1 were tested, and the results obtained are shown in Table 2.
表2Table 2
从表2中可以看出,对比例1所制备的锶锂硅硫晶体倍频效应降低了一半左右,则引入的杂质影响该晶体的非线性光学性能。It can be seen from Table 2 that the frequency doubling effect of the strontium lithium silicon sulfur crystal prepared in Comparative Example 1 is reduced by about half, and the introduced impurities affect the nonlinear optical properties of the crystal.
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