CN110573895B - Magnetic sensor - Google Patents
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- CN110573895B CN110573895B CN201880027218.2A CN201880027218A CN110573895B CN 110573895 B CN110573895 B CN 110573895B CN 201880027218 A CN201880027218 A CN 201880027218A CN 110573895 B CN110573895 B CN 110573895B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/10—Plotting field distribution ; Measuring field distribution
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
Abstract
A magnetic sensor is provided which can suppress the displacement of the detection position and detection time of each magnetoresistive element and can perform measurement with high accuracy and high spatial resolution. The magnetic sensor 100 has a plurality of magnetoresistive element units 10 arranged in a direction orthogonal to the planes of the first magnetoresistive element 1 and the second magnetoresistive element 2, in which magnetoresistive element units 10a first magnetoresistive element 1 of a planar type having a first direction as a detection axis and a second magnetoresistive element 2 of a planar type having a second direction different from the first direction as a detection axis are arranged to face each other, and a face facing the measurement sample 6 is a face 103 parallel to the arrangement direction of the magnetoresistive element units 10.
Description
Technical Field
The present invention relates to a magnetic sensor.
Background
As a technique for nondestructively measuring the function of a conductive structure or the function of the inside of a living body, a method of measuring the intensity distribution of a microscopic magnetic field generated by a current flowing through the inside is known. In such a measurement method, a magnetic sensor capable of detecting a minute magnetic field, for example, a magnetic sensor using a coil, a magnetic sensor (magnetoresistive element) in which a magnetic material is formed as a thin film, or the like can be used.
Here, when the magnetic field strength in three dimensions (X-axis direction, Y-axis direction, and Z-axis direction) is measured using the magnetoresistive element, the magnetoresistive element is generally required for each measurement axis. Further, although the magnetic field strength of one of the three axes can be calculated from the magnetic field strengths of the other two axes, a magnetoresistive element for detecting the magnetic field strengths of at least the two axes is required. It is necessary to arrange the magnetoresistive elements for detecting magnetic field strengths in different axial directions in a physically separated state, and acquire a three-dimensional magnetic field strength at a specific coordinate based on the detection result of each magnetoresistive element (for example, see patent document 1).
However, as the measurement sample becomes smaller, the difference in the position between the respective magnetoresistive elements becomes relatively more significant, and therefore, the positional deviation thereof, that is, the deviation of the detection position may become a problem. To solve such a problem, for example, a method of measuring each magnetoresistive element by sequentially moving the magnetoresistive elements to the same position using a moving table or the like to correct the positional shift between the magnetoresistive elements can be cited (for example, see patent document 2).
When the magnetic field distribution of a measurement sample is measured using the magnetoresistive elements, for example, a plurality of magnetoresistive elements are arranged on a flat plate-shaped substrate in parallel with the substrate, and the magnetic field intensity needs to be detected in a wide area (see, for example, patent document 2).
Patent document 1: japanese patent laid-open publication No. 2017-26312
Patent document 2: japanese patent No. 5626678
However, according to the above-described conventional technique, it takes time to complete the measurement because the magnetoresistive element is moved and the magnetic field strength of each component at the same time cannot be detected, and thus it is not possible to acquire magnetic field information with high accuracy.
Further, according to the above-described conventional technique, although a plurality of magnetoresistive elements are arranged in parallel on a substrate, since the magnetoresistive elements have a constant area in the plane direction, the number of magnetoresistive elements arranged per unit area of the substrate is limited, and magnetic field information cannot be acquired with high spatial resolution.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a magnetic sensor capable of suppressing a shift in detection position and detection timing of each magnetoresistive element and performing measurement with high accuracy and high spatial resolution.
In order to solve the above problems, the invention according to claim 1 is a magnetic sensor,
a plurality of magnetoresistive element units in which a first magnetoresistive element of a planar type having a first direction as a detection axis and a second magnetoresistive element of a planar type having a second direction different from the first direction as a detection axis are arranged to face each other in a direction orthogonal to the plane of the first magnetoresistive element and the second magnetoresistive element,
the surface facing the measurement sample is a surface parallel to the arrangement direction of the magnetoresistive element units.
The invention described in claim 2 is the magnetic sensor described in claim 1,
an insulating layer is provided between the first magnetoresistive element and the second magnetoresistive element.
The invention described in claim 3 is the magnetic sensor described in claim 1 or 2,
the magnetoresistive element units adjacent to each other in the arrangement direction are in contact with each other.
The invention described in claim 4 is the magnetic sensor described in any one of claims 1 to 3,
the substrate constituting the magnetoresistive element unit and the substrate constituting the adjacent magnetoresistive element unit are arranged so as to overlap each other in a direction orthogonal to the arrangement direction.
The invention described in claim 5 is the magnetic sensor according to any one of claims 1 to 3,
the first magnetic thin film and the second magnetic thin film are respectively arranged on two sides of the substrate, the first magnetic thin film and the second magnetic thin film are respectively arranged on the first direction as a detection axis and the second direction as a detection axis,
the plurality of substrates are arranged such that the surface on the first magnetic thin film side and the surface on the second magnetic thin film side face each other, thereby constituting a plurality of magnetoresistive element units.
The invention described in claim 6 is the magnetic sensor according to any one of claims 1 to 5,
the magnetic recording device is provided with a calculation unit which derives the magnetic field strength in the arrangement direction based on the detection results of the plurality of magnetoresistive element units.
The invention described in claim 7 is the magnetic sensor described in any one of claims 1 to 6, including:
an external magnetoresistive element that detects an external magnetic field intensity; and
and a determination unit that determines a noise component based on an external environment based on a detection result of the external magnetoresistive element.
The invention described in claim 8 is the magnetic sensor according to any one of claims 1 to 7,
the magnetoresistive element unit includes a plurality of peripheral magnetoresistive elements, and the plurality of peripheral magnetoresistive elements are arranged in a distributed manner around the plurality of magnetoresistive element units.
According to the present invention, it is possible to provide a magnetic sensor capable of performing measurement with high accuracy and high spatial resolution while suppressing a shift in the detection position and detection timing of each magnetoresistive element.
Drawings
Fig. 1 is a schematic configuration diagram showing a magnetic sensor according to a first embodiment.
Fig. 2A is a front view showing a schematic configuration of a magnetoresistive element unit.
Fig. 2B is an exploded perspective view showing a schematic structure of the magnetoresistive element unit.
Fig. 3 is a schematic diagram showing a stacked structure of the first magnetoresistive element.
Fig. 4 is a plan view showing a schematic configuration of the magnetic sensor according to the first embodiment.
Fig. 5 is a schematic configuration diagram showing a magnetic sensor according to a second embodiment.
Fig. 6A is a plan view showing a schematic configuration of a magnetic sensor according to a second embodiment.
Fig. 6B is a side view showing a schematic configuration of a magnetic sensor according to a second embodiment.
Fig. 7 is a schematic configuration diagram showing a magnetic sensor according to a third embodiment.
Fig. 8 is a plan view showing a schematic configuration of a magnetic sensor according to a fourth embodiment.
Fig. 9 is a plan view showing a schematic configuration of a magnetic sensor according to a fifth embodiment.
Detailed Description
Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. However, various limitations that are technically preferable for carrying out the present invention are added to the embodiments described below, but the scope of the present invention is not limited to the embodiments described below and the illustrated examples.
First embodiment
A magnetic sensor 100 according to a first embodiment will be described with reference to fig. 1 to 4. Fig. 1 is a schematic configuration diagram showing a magnetic sensor 100 according to a first embodiment. Fig. 2A and 2B are schematic configuration diagrams of the magnetoresistive element unit 10, fig. 2A is a front view seen from a plane direction of the magnetoresistive element unit 10, and fig. 2B is an exploded perspective view of the magnetoresistive element unit 10. Fig. 3 is a schematic diagram showing a stacked structure of the first magnetoresistive element 1. Fig. 4 is a plan view schematically showing the configuration of the magnetic sensor 100 and the measurement sample 6. Note that, in fig. 1, the reference sensor 104 is not illustrated, and in fig. 4, the control unit 102 is not illustrated.
As shown in fig. 1, the magnetic sensor 100 includes: a laminated body 101 in which a plurality of magnetoresistive element units 10 are arranged in a direction orthogonal to the planes of the first and second magnetoresistive elements 1 and 2, and in which a planar first magnetoresistive element 1 having a first direction as a detection axis and a planar second magnetoresistive element 2 having a second direction different from the first direction as a detection axis are arranged to face each other in the magnetoresistive element units 10; a reference sensor 104 provided at a position separated from the measurement sample 6; the control unit 102 derives the magnetic field strength in the arrangement direction based on the detection results of the first and second magnetoresistive elements 1 and 2, and determines the noise component based on the external environment based on the detection result of the reference sensor 104. In the magnetic sensor 100, the surface facing the measurement sample 6 is a surface 103 parallel to the arrangement direction of the stacked body 101.
In the following description, a specific direction in the plane of the first and second magnetoresistive elements 1 and 2 is referred to as an X direction, a direction orthogonal to the X direction in the plane is referred to as a Y direction, and a direction orthogonal to the X direction and the Y direction (an arrangement direction of the first and second magnetoresistive elements 1 and 2) is referred to as a Z direction.
As shown in fig. 1, the plurality of magnetoresistive element units 10 are arranged such that the magnetoresistive element units 10 adjacent in the arrangement direction contact each other. As shown in fig. 2A and 2B, the magnetoresistive element unit 10 is formed by stacking the first magnetoresistive element 1, the second magnetoresistive element 2, and the insulating layer 3 provided therebetween. The first magnetoresistive element 1 includes a silicon substrate 12, a first magnetic thin film 140, an electrode layer 14, and the like, and the second magnetoresistive element 2 includes a silicon substrate 22, a second magnetic thin film 240, an electrode layer 24, and the like. The first and second magnetoresistive elements 1 and 2 are disposed so that the surface on the first magnetic thin film 140 side and the surface on the second magnetic thin film 240 side face each other.
As shown in fig. 3, the first magnetoresistive element 1 is a tunnel magnetoresistive element (TMR element) in which a magnetic tunnel junction is formed by a fixed magnetic layer 110 whose magnetization direction is fixed, a free magnetic layer 130 whose magnetization direction changes under the influence of an external magnetic field, and an insulating layer 120 disposed between the fixed magnetic layer 110 and the free magnetic layer 130, and the resistance of the insulating layer 120 is changed by a tunneling effect according to an angle difference between the magnetization direction of the fixed magnetic layer 110 and the magnetization direction of the free magnetic layer 130.
The first magnetoresistive element 1 has, for example, a laminated structure on a silicon substrate (Si, SiO)2) An underlayer (Ta)13 is formed on the substrate 12, and an antiferromagnetic layer (IrMn)111, a ferromagnetic layer (CoFe)112, a magnetic coupling layer (Ru)113, and a ferromagnetic layer (CoFeB)114 are stacked thereon from below as a fixed magnetic layer 110, and a ferromagnetic layer (CoFeB)131 and a soft magnetic layer (NiFe or CoFeSi)133 are stacked thereon from below as a free magnetic layer 130 via an insulating layer (MgO) 120. The first magnetic thin film 140 is formed by the underlayer 13, the fixed magnetic layer 110, the insulating layer 120, and the free magnetic layer 130. The layer configuration and the material of each layer of the first magnetoresistive element 1 are not limited to these embodiments, and may be any known layer configuration and material, and for example, a magnetic coupling layer (Ru) may be further laminated between the ferromagnetic layer 131 and the soft magnetic layer 133.
In the first magnetoresistive element 1 configured as described above, the direction of magnetization of the fixed magnetic layer 110 and the direction of magnetization of the free magnetic layer 130 are stabilized at a position twisted by approximately 90 degrees in a state where the detection magnetic field is zero. This is because magnetization is performed in the direction of each easy axis. That is, the first magnetoresistive element 1 is formed at a position where the direction a2 of the easy magnetization axis of the free magnetic layer 130 is twisted by substantially 90 degrees with respect to the direction a1 of the easy magnetization axis of the fixed magnetic layer 110.
For example, when an external magnetic field in the direction opposite to the magnetization direction of the fixed magnetic layer 110 is applied to the first magnetoresistive element 1, the magnetization direction of the free magnetic layer 130 rotates in the direction opposite to the magnetization direction of the fixed magnetic layer 110, and the resistance of the insulating layer 120 increases due to the tunnel effect. On the other hand, when an external magnetic field in the same direction as the magnetization direction of the fixed magnetic layer 110 is applied to the first magnetoresistive element 1, the magnetization direction of the free magnetic layer 130 rotates in the same direction as the magnetization direction of the fixed magnetic layer 110, and the resistance of the insulating layer 120 decreases due to the tunnel effect. By electrically reading the magnetic field intensity applied from the outside as the change amount of the resistance value through the electrode layer 14, the magnetic field intensity can be detected by the first magnetoresistive element 1.
The second magnetoresistive element 2 is configured in the same manner as the first magnetoresistive element 1 except that the direction of the detection axis is different. Specifically, as shown in fig. 2A and 2B, the direction of magnetization of the fixed magnetic layer 110 of the first magnetoresistive element 1 is the X direction, and therefore the X direction is the detection axis, and the direction of magnetization of the fixed magnetic layer (not shown) of the second magnetoresistive element 2 is the Y direction, and therefore the Y direction is the detection axis.
By obtaining the vector component from the detection results of the first and second magnetoresistive elements 1 and 2, the magnetoresistive element unit 10 functions as a magnetic sensor having sensitivity to the plane direction of the first and second magnetoresistive elements 1 and 2. Further, since the first and second magnetoresistive elements 1 and 2 are disposed such that the surface on the first magnetic thin film 140 side and the surface on the second magnetic thin film 240 side face each other, the magnetic field detection portions of the first and second magnetoresistive elements 1 and 2 can be brought close to each other, and the displacement of the detection positions of the first and second magnetoresistive elements 1 and 2 can be suppressed. Thus, the magnetic sensor 100 can simultaneously capture the magnetic field intensity of each detection axis of the first and second magnetoresistive elements 1 and 2, and can acquire two-dimensional magnetic field information accurately at high speed.
The insulating layer 3 is provided between the first magnetoresistive element 1 and the second magnetoresistive element 2 and is made of an insulating material (e.g., SiO)2Etc.) are provided with adhesive layers for bonding to the first and second magnetoresistive elements 1 and 2, respectively. This prevents direct contact between the surface of the first magnetoresistive element 1 on the first magnetic thin film 140 side and the surface of the second magnetoresistive element 2 on the second magnetic thin film 240 side, and allows the two to be integrally bonded. In addition, since the first magnetoresistive element 1 and the second magnetoresistive element 2 can be brought close to the order of several μm, the magnetic field strengths of the two components can be detected accurately and at high speed. The adhesive layer can be made of, for example, a thermosetting resin. The insulating layer 3 may be formed of an insulating adhesive layer without an insulating sheet.
The reference sensor 104 is configured by disposing external magnetoresistive elements 104a and 104b opposite to each other via an insulating layer (not shown) for detecting the magnetic field strength in the external environment of the measurement sample 6. External magnetoresistive element 104a is configured similarly to first magnetoresistive element 1, and external magnetoresistive element 104b is configured similarly to second magnetoresistive element 2. In other words, the reference sensor 104 is configured similarly to the magnetoresistive element unit 10 described above except that it is provided at a position separated from the stacked body 101 and the measurement sample 6, respectively, as shown in fig. 4.
The control unit 102 can acquire the magnetic field strengths in the X direction and the Y direction detected by the respective magnetoresistive element units 10, and calculate the magnetic field strength in the arrangement direction (Z direction) based on the difference between the acquired magnetic field strengths. Thereby, the magnetic sensor 100 can derive three-dimensional magnetic field information of the measurement sample 6.
Further, the control unit 102 specifies a noise component based on the external environment based on the detection results of the external magnetoresistive elements 104a and 104b constituting the reference sensor 104. Specifically, for example, when noise (environmental noise) due to the external environment is generated from the outside of the measurement sample 6, the environmental noise is detected by all the magnetoresistive element cells 10 and the reference sensor 104 at substantially the same phase and intensity, and therefore the control unit 102 can determine that the same signal waveform is the environmental noise in the detection results. Therefore, the control unit 102 can obtain magnetic field information with higher accuracy by subtracting the environmental noise from the magnetic field strength (the magnetic field information of the measurement sample 6 and the magnetic field information as the environmental noise are mixed) detected in each magnetoresistive element unit 10.
When a source of environmental noise is present at a position close to the measurement sample 6, the intensity of the environmental noise detected by each magnetoresistive element unit 10 and the reference sensor 104 is different. In this case, the control unit 102 can obtain magnetic field information with higher accuracy by weighting the outputs of the magnetoresistive element units 10 and the reference sensor 104 based on multivariate analysis (e.g., principal component analysis), determining an environmental noise component, and subtracting the environmental noise component from the measurement result.
Here, when the intensity of the environmental noise is large, the signal may be saturated when the output signals of the magnetoresistive element units 10 and the reference sensor 104 are amplified by an amplifier (not shown) and measurement may not be performed or the accuracy may be degraded. Therefore, it is preferable to set the dynamic range of the reference sensor 104 to be wide (specifically, to reduce the gain of the amplifier), and to make the strong environmental noise also fall within the measurement range, so that it is possible to grasp the degree of environmental noise to be mixed. Further, it is preferable that control unit 102 applies feedback to the gain of the amplifier of magnetoresistive element unit 10 based on the detection result of reference sensor 104, and sets the gain to an appropriate amplification factor.
When the magnetic field strength of the measurement sample 6 is detected using the magnetic sensor 100 configured as described above, the surface 103 parallel to the arrangement direction of the magnetoresistive element cells 10 is brought close to the measurement sample 6. Thus, the plurality of first and second magnetoresistive elements 1 and 2 can be arranged more densely with respect to the measurement sample 6 than when the first and second magnetoresistive elements 1 and 2 are arranged so that the surface on the first magnetic thin film 140 side and the surface on the second magnetic thin film 240 side face the measurement sample 6. This makes it possible to simultaneously measure the distribution of the magnetic field generated from the measurement sample 6 with high spatial resolution. Therefore, the magnetic sensor 100 is very useful for detecting the abnormal metal object 61 generated in the measurement sample 6 when the measurement sample 6 is a flat thin lithium ion battery, for example.
Here, the size of the magnetic field detection portion of each of the first and second magnetoresistive elements 1 and 2 is generally within a range of, for example, several tens of μm to several mm in length in the in-plane direction. The size of the magnetic field detection section affects the S/N ratio and spatial resolution of the first and second magnetoresistive elements 1 and 2.
On the other hand, when the measurement sample 6 has a flat plate shape, for example, the length of one side is generally in the range of several cm to several m. The thickness of the measurement sample 6 is generally in the range of several hundred μm to several cm. In the case where the measurement sample 6 is, for example, a laminated lithium ion battery, the length of one side is generally in the range of 10 to 30 cm. In the case where the measurement sample 6 is a test specimen of, for example, an aluminum plate or a carbon steel plate, the length of one side is generally in the range of 20 to 100cm, and several m may be used.
The spatial resolution of the first magnetoresistive element 1 alone is determined by the relative size with respect to the metallic anomalies 61 present in the given sample 6. For example, when detecting the approximate position of the substantially spherical metallic abnormal object 61 having a diameter Φ of about 100 μm, the length of one side of the first magnetoresistive element 1 is preferably set within a range from about the same size as the diameter of the metallic abnormal object 61 (about 100 μm) to about 100 times the diameter of the metallic abnormal object 61 (about 10 mm). For example, when accurately detecting the position of the metal anomaly 61 having a diameter Φ of about 100 μm, the length of one side of the first magnetoresistive element 1 is preferably set within a range from approximately the same size as the diameter of the metal anomaly 61 (about 100 μm) to about 10 times the diameter of the metal anomaly 61 (about 1 mm). The same applies to the second magnetoresistive element 2.
As shown in fig. 4, when measurement is performed using the magnetic sensor 100, the stacked body 101 and the measurement sample 6 may be moved relative to each other. For example, the magnetic field distribution of the entire region in the Y direction of the measurement sample 6 can be acquired by scanning the laminate 101 in the direction B1 shown in fig. 4 by a predetermined distance and detecting the magnetic field intensity at each measurement position at each predetermined distance. In this case, the spatial resolution in the Y direction can be improved by shortening the distance between the measurement positions. Further, by measuring the entire Y-direction area of the measurement sample 6 by scanning the laminate 101 in the direction B1, then scanning the laminate in the direction B2 shown in fig. 4 by a predetermined distance, and then scanning the laminate in the direction B1 again to perform measurement, a wider magnetic field distribution can be measured, and the spatial resolution in the Z direction can also be improved. Further, the magnetic field distribution of the measurement sample 6 can be measured in more detail by scanning the laminate 101 in the X direction for a predetermined distance and then scanning the laminate again in the directions B1 and B2 to measure the magnetic field distribution.
Further, the measurement may be performed using a plurality of magnetic sensors 100, or each of the plurality of magnetic sensors 100 may be moved relative to the measurement sample. Alternatively, the position of the magnetic sensor 100 may be fixed, and the measurement sample 6 may be moved.
As described above, according to the first embodiment, in the magnetic sensor 100, the plurality of magnetoresistive element units 10 are arranged in the direction orthogonal to the planes of the first magnetoresistive element 1 and the second magnetoresistive element 2, and in the magnetoresistive element units 10, the first magnetoresistive element 1 of the planar type having the first direction as the detection axis and the second magnetoresistive element 2 of the planar type having the second direction different from the first direction as the detection axis are arranged to face each other, and the face facing the measurement sample 6 is the face 103 parallel to the arrangement direction of the magnetoresistive element units 10, so that the plurality of magnetoresistive elements can be arranged relatively densely with respect to the measurement sample. This makes it possible to suppress the shift of the detection position of each magnetoresistive element, and also suppress the shift of the detection timing because the magnetic field strength is detected simultaneously by the magnetoresistive elements arranged in this manner. This enables measurement to be performed with high accuracy and high spatial resolution.
In addition, since the insulating layer 3 is provided between the first magnetoresistive element 1 and the second magnetoresistive element 2, the first magnetoresistive element 1 and the second magnetoresistive element 2 can be brought close to the order of several μm, and the magnetic field intensity can be detected accurately and at high speed.
In addition, since the magnetoresistive element cells 10 adjacent to each other in the arrangement direction are in contact with each other, the measurement can be performed with higher spatial resolution.
Further, since the control unit 102 is provided to derive the magnetic field strength in the arrangement direction based on the detection results of the plurality of magnetoresistive element units 10, three-dimensional magnetic field information can be acquired.
Further, since the external magnetoresistive elements 104a and 104b that detect the external magnetic field strength and the control unit 102 that specifies the noise component based on the external environment based on the detection results of the external magnetoresistive elements 104a and 104b are provided, the noise component can be removed from the magnetic field strength detected by the plurality of magnetoresistive element units 10, and more accurate magnetic field information can be obtained.
In the first embodiment described above, the magnetoresistive element unit 10 is configured such that the surface of the first magnetoresistive element 1 on the first magnetic thin film 140 side and the surface of the second magnetoresistive element 2 on the second magnetic thin film 240 side face each other, but the present invention is not limited to this. That is, the magnetoresistive element unit may be configured such that the surface of the first magnetoresistive element 1 opposite to the first magnetic thin film 140 faces the surface of the second magnetoresistive element 2 on the second magnetic thin film 240 side. In this case, the surface of the first magnetoresistive element 1 on the first magnetic thin film 140 side and the surface of the second magnetoresistive element 2 on the second magnetic thin film 240 side are arranged so as to face in the same direction, thereby forming a laminated body.
In the first embodiment described above, the magnetoresistive element cells 10 adjacent to each other in the arrangement direction are in contact with each other, but the present invention is not limited to this, and the magnetoresistive element cells 10 adjacent to each other may be arranged with a gap therebetween without being in contact with each other. In this case, the smaller the gap, the more preferable the gap is from the viewpoint of measurement with higher spatial resolution.
In the first embodiment, the first and second magnetoresistive elements 1 and 2 are tunnel magnetoresistive elements, but the present invention is not limited to this as long as they are planar magnetoresistive elements, and they may be anisotropic magnetoresistive elements (amr) or giant magnetoresistive elements (gmr) or the like.
In the first embodiment described above, the first magnetoresistive element 1 has the X direction as the detection axis, and the second magnetoresistive element 2 has the Y direction as the detection axis, that is, the direction of the detection axis of the first magnetoresistive element 1 and the direction of the detection axis of the second magnetoresistive element 2 are twisted by 90 degrees in the plane direction of the first and second magnetoresistive elements 1 and 2, but the present invention is not limited thereto. For example, the first magnetoresistive element 1 may have the Y direction as a detection axis and the second magnetoresistive element 2 may have the X direction as a detection axis, and an angle formed between the direction of the detection axis of the first magnetoresistive element 1 and the direction of the detection axis of the second magnetoresistive element 2 may be smaller than 90 degrees.
In the first embodiment, the insulating layer 3 is provided between the first magnetoresistive element 1 and the second magnetoresistive element 2 which are disposed to face each other, but the insulating layer 3 may not be provided. In this case, the first magnetoresistive element 1 and the second magnetoresistive element 2 are preferably fixed in a state where a gap is provided so that they do not contact each other. In addition, from the viewpoint of suppressing the displacement of the detection position of each magnetoresistive element, the smaller the gap, the more preferable.
In the first embodiment described above, the multilayer body 101 is configured such that a plurality of magnetoresistive element units 10 are arranged in the Z direction, but magnetoresistive element units having the same orientation may also be arranged in a direction (Y direction) orthogonal to the arrangement direction, and the surface 103 may be larger in this direction. In this case, by forming the first and second magnetoresistive elements 1 and 2 to have smaller sizes in the plane direction, the spatial resolution in the direction (Y direction) orthogonal to the arrangement direction can be further improved.
In the first embodiment described above, the reference sensor 104 is configured similarly to the magnetoresistive element unit 10, but the present invention is not limited thereto. For example, since the feature amount of the environmental noise can be extracted by each magnetoresistive element unit 10 and the reference sensor 104, the external magnetoresistive elements 104a and 104b may be configured only by one of the external magnetoresistive elements 104a and 104b, and the external magnetoresistive elements 104a and 104b may be configured differently from the first and second magnetoresistive elements 1 and 2, respectively.
In the first embodiment described above, the reference sensor 104 is provided for the purpose of removing ambient noise, but the present invention is not limited to this, and the reference sensor 104 may not be provided in the following cases, for example.
For example, when the magnetic field strength of the measurement sample 6 is small and the environmental noise is an obstacle element for measurement, the strength of the environmental noise detected by the laminated body 101 may be reduced by covering the laminated body 101 with a cylindrical or box-shaped magnetic shield (not shown). The magnetic shield is configured by combining plate-like or sheet-like members containing an iron mixture system such as NiFe and CoFeSiB having a high magnetic permeability.
For example, if a current can be applied to the measurement sample 6, the environmental noise and the magnetic field strength of the measurement sample 6 can be distinguished by frequency by applying a current to the measurement sample 6 in a frequency band different from that of the environmental noise and measuring the magnetic field generated by the current. For example, the frequencies of the commercial power supply, which can be cited well as the environmental noise, are 50Hz, 60Hz, and multiples thereof, and for example, 70Hz does not overlap these frequency bands, so that it is possible to cite applying a current of 70Hz to the measurement sample 6.
For example, when the environmental noise is always constant, the environmental noise can be removed by measuring with the magnetic sensor 100 in a state where the measurement sample 6 is not provided, and then measuring with the measurement sample 6 provided, and subtracting the reference component from the measurement result.
Second embodiment
A second embodiment of the magnetic sensor according to the present invention will be described below with reference to fig. 5 and fig. 6A and 6B. The configurations other than those described below are substantially the same as the magnetic sensor 100 of the first embodiment, and therefore the same configurations are denoted by the same reference numerals and detailed description thereof is omitted.
Fig. 5 is a schematic configuration diagram showing a magnetic sensor 200 according to a second embodiment. Fig. 6A and 6B are schematic configuration diagrams showing the magnetic sensor 200, fig. 6A is a plan view of the magnetic sensor 200 as viewed from the X direction, and fig. 6B is a side view of the magnetic sensor 200 as viewed from the Z direction. In fig. 5 and fig. 6A and 6B, the control unit 102 and the reference sensor 104 are not shown.
In the magnetic sensor 200 of the second embodiment, the magnetoresistive element units 10A to 10E are arranged to form the laminated body 201, and a part of the silicon substrates 12b to 12E and 22a to 22d forming the magnetoresistive element units 10A to 10E and a part of the silicon substrates 12b to 12E and 22a to 22d forming the adjacent magnetoresistive element units 10A to 10E are arranged so as to overlap in a direction (XY direction) orthogonal to the arrangement direction of the magnetoresistive element units 10A to 10E. The surface of the magnetic sensor 200 facing the measurement sample 6 is a surface 203 parallel to the arrangement direction of the magnetoresistive element units 10A to 10E.
The first magnetoresistive elements 1a to 1e and the second magnetoresistive elements 2a to 2e are configured in the same manner as the first and second magnetoresistive elements 1 and 2 of the first embodiment described above, except that they are formed in a rectangular shape when viewed from a direction orthogonal to the planar direction.
The first magnetoresistive elements 1a to 1e are arranged such that the longitudinal direction in the planar direction is along the X direction. The first magnetoresistive elements 1b and 1c are arranged in the Y direction and parallel to each other in the plane direction. Therefore, the first magnetoresistive elements 1b and 1c are provided at the same position in the Z direction, but the first magnetic thin films 140b and 140c are disposed so as to face opposite sides to each other. Similarly, the first magnetoresistive elements 1d and 1e are arranged in the Y direction with their plane directions parallel to each other. Therefore, the first magnetoresistive elements 1d and 1e are provided at the same position in the Z direction, but the first magnetic thin films 140d and 140e are disposed so as to face opposite sides to each other.
The second magnetoresistive elements 2a to 2e are arranged such that the longitudinal direction in the planar direction is along the Y direction. The second magnetoresistive elements 2a and 2b are arranged in the X direction with their plane directions parallel to each other. Therefore, the second magnetoresistive elements 2a and 2b are provided at the same position in the Z direction, but the second magnetic thin films 240a and 240b are disposed so as to face opposite sides to each other. Similarly, the second magnetoresistive elements 2c and 2d are arranged in the X direction with their plane directions parallel to each other. Therefore, the second magnetoresistive elements 2c and 2d are provided at the same position in the Z direction, but the second magnetic thin films 240c and 240d are disposed so as to face opposite sides to each other.
The first and second magnetoresistive elements 1a to 1e, 2a to 2e are arranged in the Z direction with the insulating layers 3a to 3e interposed therebetween. Specifically, as shown in fig. 5 and fig. 6A and 6B, the first magnetoresistive element 1a, the insulating layer 3a, the second magnetoresistive element 2a, the insulating layer 3B, the first magnetoresistive element 1B, the insulating layer 3c, the second magnetoresistive element 2c, the insulating layer 3d, the first magnetoresistive element 1d, and the insulating layer 3e, the second magnetoresistive element 2e are arranged in this order in the Z direction. Thus, the first magnetoresistive element 1a, the insulating layer 3a, and the second magnetoresistive element 2a constitute a magnetoresistive element unit 10A, the second magnetoresistive element 2B, the insulating layer 3B, and the first magnetoresistive element 1B constitute a magnetoresistive element unit 10B, the first magnetoresistive element 1C, the insulating layer 3C, and the second magnetoresistive element 2C constitute a magnetoresistive element unit 10C, the second magnetoresistive element 2D, the insulating layer 3D, and the first magnetoresistive element 1D constitute a magnetoresistive element unit 10D, and the first magnetoresistive element 1E, the insulating layer 3E, and the second magnetoresistive element 2E constitute a magnetoresistive element unit 10E.
As described above, according to the second embodiment, the magnetic sensor 200 has a plurality of magnetoresistive elements arranged more densely with respect to the measurement sample because part of the silicon substrates 12b to 12E and 22a to 22d constituting the magnetoresistive element units 10A to 10E and part of the silicon substrates 12b to 12E and 22a to 22d constituting the adjacent magnetoresistive element units 10A to 10E are arranged so as to overlap each other in the direction orthogonal to the arrangement direction. This makes it possible to suppress the shift of the detection position of each magnetoresistive element, and also suppress the shift of the detection timing because the magnetic field strength is detected simultaneously by the magnetoresistive elements arranged in this manner. This enables measurement to be performed with higher accuracy and higher spatial resolution.
In the second embodiment described above, the stacked body 201 is configured to arrange five magnetoresistive element units 10A to 10E, but the present invention is not limited thereto, and the number of the magnetoresistive element units arranged may be 2 to 4, or 6 or more.
Third embodiment
A third embodiment of the magnetic sensor according to the present invention will be described below with reference to fig. 7. The configurations other than those described below are substantially the same as the magnetic sensor 100 of the first embodiment, and therefore the same configurations are denoted by the same reference numerals and detailed description thereof is omitted.
Fig. 7 is a schematic configuration diagram showing a magnetic sensor 300 according to a third embodiment. In fig. 7, the control unit 102 and the reference sensor 104 are not shown.
In the magnetic sensor 300 according to the third embodiment, the first magnetic thin film 140 having the first direction (X direction) as the detection axis and the second magnetic thin film 240 having the second direction (X direction) as the detection axis are provided on both surfaces of the silicon substrate 12, respectively, to constitute the first and second magnetoresistive elements 301 and 302 formed integrally. A plurality of silicon substrates 12 configured as described above are arranged such that the surface on the first magnetic thin film 140 side faces the surface on the second magnetic thin film 240 side, and a plurality of magnetoresistive element units 310 are configured. Further, the insulating layer 3 is provided between the adjacent silicon substrates 12, and thus the plurality of silicon substrates 12 are integrated to form the laminated body 320. The surface of the magnetic sensor 300 facing the measurement sample 6 is a surface 303 parallel to the arrangement direction of the stacked body 320. The silicon substrate 12 is provided with electrode layers 14 and 24 for taking out the magnetic field intensity detected by the first and second magnetic thin films 140 and 240 to the outside.
As described above, according to the third embodiment, the magnetic sensor 300 is configured such that the first magnetic thin film 140 having the first direction as the detection axis and the second magnetic thin film 240 having the second direction as the detection axis are provided on both surfaces of the silicon substrate 12, respectively, to configure the first magnetoresistive element 301 and the second magnetoresistive element 302, and the plurality of silicon substrates 12 are arranged such that the surface on the first magnetic thin film 140 side and the surface on the second magnetic thin film 240 side face each other, to configure the plurality of magnetoresistive element units 310, so that the plurality of magnetoresistive elements can be arranged more densely with respect to the measurement sample. This makes it possible to suppress the shift of the detection position of each magnetoresistive element, and also suppress the shift of the detection timing because the magnetic field strength is detected simultaneously by the magnetoresistive elements arranged in this manner. This enables measurement to be performed with higher accuracy and higher spatial resolution.
Fourth embodiment
A fourth embodiment of the magnetic sensor according to the present invention will be described below with reference to fig. 8. The configurations other than those described below are substantially the same as the magnetic sensor 100 of the first embodiment, and therefore the same configurations are denoted by the same reference numerals and detailed description thereof is omitted.
Fig. 8 is a plan view showing a schematic configuration of a magnetic sensor 400 and a measurement sample 6 according to a fourth embodiment. In fig. 8, the control unit 102 is not shown.
The magnetic sensor 400 according to the fourth embodiment includes a laminated body 401 in which magnetoresistive element cells 10 are arranged, a reference sensor 104, a plurality of cells 405 arranged in a dispersed manner around the laminated body 401, and the like. The stacked body 401 is configured such that two rows of the magnetoresistive element units 10 arranged in the Z direction are provided in contact with each other in the Y direction.
The cell 405 is configured such that peripheral magnetoresistive elements 405a and 405b are disposed to face each other with an insulating layer (not shown) interposed therebetween, and the peripheral magnetoresistive elements 405a and 405b are configured similarly to the first and second magnetoresistive elements 1 and 2, respectively. Therefore, the cell 405 is configured similarly to the magnetoresistive element cell 10.
As shown in fig. 8, the plurality of cells 405 are disposed so as to be dispersed around the laminate 401 in the X direction over the entire surface of the measurement sample 6 facing the laminate 401 and its periphery. In addition, in terms of cost performance, it is preferable that 5 to 20 cells 405 be arranged in each of the vertical and horizontal directions when viewed from the X direction. For example, if five cells 405 are arranged in the vertical and horizontal directions, a total of 25 signal outputs are obtained, and if 20 cells 405 are arranged in the vertical and horizontal directions, a total of 400 signal outputs are obtained. Although the distance between the cells 405 affects the detection accuracy of the magnetic field distribution, it is more cost-effective to arrange them somewhat more coarsely than to arrange them more densely. For example, in the case where the measurement sample 6 is a 20cm square, if 20 cells 405 are arranged at equal intervals in the vertical and horizontal directions in the measurement surface of the measurement sample 6, the distance between the cells 405 is about 1 cm. In the case of such an arrangement, if the metal anomaly 61 is spherical with a diameter Φ of about 100 μm, the approximate position can be specified.
In addition, the plurality of cells 405 are arranged in the same direction as the magnetoresistive element cells 10 constituting the stacked body 401, that is, in a direction in which the plane direction of the cells 405 is parallel to the XY plane.
Each of the plurality of units 405 is configured to be independently movable, and the distance between the units 405, the distance between the stacked body 401, the distance between the units 6, and the like can be adjusted according to the size of the measurement sample 6.
In the measurement using the magnetic sensor 400, the surface of the cell 405 facing the measurement sample 6 and the surface of the laminate 401 facing the measurement sample 6 are flush with each other, and the measurement is performed in a state where they are close to the measurement sample 6. In this way, after rough magnetic field distribution information of the entire measurement sample 6 is acquired by the stack 401 and the unit 405, a portion of the measurement sample 6 to be measured in more detail is specified, and the stack 401 is moved so as to face the portion, and measurement can be performed again. This makes it possible to easily specify the position of the internal defect of the measurement sample 6 and acquire detailed magnetic field information of the internal defect.
The unit 405 can also be used for the same purpose as the reference sensor 104. That is, since the unit 405 is configured to be independently movable, the unit 405 may be moved to a predetermined position, and then the magnetic field intensity may be detected, and the noise component based on the external environment may be determined based on the detection result.
As described above, according to the fourth embodiment, since the plurality of peripheral magnetoresistive elements 405a and 405b are provided so as to be dispersed around the stacked body 401 including the plurality of magnetoresistive element units 10, it is possible to easily specify the position of the internal defect of the measurement sample 6 and to acquire detailed magnetic field information of the internal defect.
In the fourth embodiment, the cell 405 is configured similarly to the magnetoresistive element cell 10, but is not limited thereto. For example, the cell 405 may have a different size and shape from those of the magnetoresistive element cell 10. Therefore, the peripheral magnetoresistive elements 405a and 405b may have a different configuration from the first and second magnetoresistive elements 1 and 2.
In the fourth embodiment, the peripheral magnetoresistive elements 405a and 405 constituting the cell 405 have the X direction and the Y direction as the detection axes, respectively, but the present invention is not limited thereto. For example, a peripheral magnetoresistive element having the Z direction as the detection axis may be further provided.
Fifth embodiment
A fifth embodiment of the magnetic sensor according to the present invention will be described below with reference to fig. 9. The configurations other than those described below are substantially the same as the magnetic sensor 400 of the fourth embodiment, and therefore the same configurations are denoted by the same reference numerals and detailed description thereof is omitted.
Fig. 9 is a plan view showing a schematic configuration of a magnetic sensor 500 and a measurement sample 6 according to a fifth embodiment. In fig. 9, the control unit 102 is not shown.
In the magnetic sensor 500 of the fifth embodiment, the reference sensor 504 and the plurality of cells 505 arranged in a dispersed manner around the laminate 401 are arranged in a direction different from the magnetoresistive element cells 10 constituting the laminate 401, that is, in a direction parallel to the YZ plane. The reference sensor 504 and the unit 505 are configured similarly to the reference sensor 104 and the unit 405 described above, except that the arrangement direction is different. The reference sensor 504 may be disposed such that any one of the two surfaces of the reference sensor 504 faces the X direction side. The unit 505 may be disposed so that any of both surfaces of the unit 505 faces the X direction side, but it is preferable that the units 505 are the same among the plurality of units 505.
As described above, according to the fifth embodiment, since the plurality of cells 505 arranged in a dispersed manner around the stacked body 401 including the plurality of magnetoresistive element cells 10 are provided, it is possible to easily specify the position of the internal defect of the measurement sample 6 and to acquire detailed magnetic field information of the internal defect.
The present invention can be used for a magnetic sensor.
Description of the reference numerals
1. 1a to 1E, 301 … first magnetoresistive elements, 2a to 2E, 302 … second magnetoresistive elements, 3a to 3E … insulating layers, 10A to 10E … magnetoresistive element units, 12a to 12E, 22a to 22E … silicon substrates (substrates), 100, 200, 300, 400, 500 … magnetic sensors, 102 … control units (arithmetic units, determination units), 103, 203, 303 … planes, 104a, 104b … external magnetoresistive elements, 140A to 140E … first magnetic films, 240A to 240E … second magnetic films, 310 … magnetoresistive element units, 405a, 405b … peripheral magnetoresistive elements.
Claims (8)
1. A magnetic sensor, wherein,
a plurality of magnetoresistive element units in which a first magnetoresistive element of a planar type having a first direction as a detection axis and a second magnetoresistive element of a planar type having a second direction different from the first direction as a detection axis are arranged so as to face each other in a direction orthogonal to the planes of the first and second magnetoresistive elements,
the surface facing the measurement sample is a surface parallel to the arrangement direction of the magnetoresistive element units.
2. A magnetic sensor according to claim 1,
an insulating layer is provided between the first magnetoresistive element and the second magnetoresistive element.
3. The magnetic sensor according to claim 1 or 2,
the magnetoresistive element units adjacent to each other in the arrangement direction are in contact with each other.
4. The magnetic sensor according to claim 1 or 2,
the substrate constituting the magnetoresistive element unit and the substrate constituting the adjacent magnetoresistive element unit are arranged so as to overlap each other in a direction orthogonal to the arrangement direction.
5. The magnetic sensor according to claim 1 or 2,
the first magnetic thin film and the second magnetic thin film are respectively arranged on two sides of the substrate, the first magnetic thin film and the second magnetic thin film are respectively arranged on the first direction as a detection axis and the second direction as a detection axis,
the plurality of substrates are arranged such that the surface on the first magnetic thin film side and the surface on the second magnetic thin film side face each other, thereby constituting a plurality of magnetoresistive element units.
6. The magnetic sensor according to claim 1 or 2,
the magnetic recording device is provided with a calculation unit which derives the magnetic field strength in the arrangement direction based on the detection results of the plurality of magnetoresistive element units.
7. The magnetic sensor according to claim 1 or 2, comprising:
an external magnetoresistive element that detects an external magnetic field intensity; and
and a determination unit that determines a noise component based on an external environment based on a detection result of the external magnetoresistive element.
8. The magnetic sensor according to claim 1 or 2,
the magnetoresistive element unit includes a plurality of peripheral magnetoresistive elements arranged in a distributed manner around the plurality of magnetoresistive element units.
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| JP2017-086368 | 2017-04-25 | ||
| JP2017086368 | 2017-04-25 | ||
| PCT/JP2018/016557 WO2018199068A1 (en) | 2017-04-25 | 2018-04-24 | Magnetic sensor |
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| US (1) | US11237227B2 (en) |
| JP (1) | JP7064662B2 (en) |
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| JP7040503B2 (en) * | 2019-08-27 | 2022-03-23 | 横河電機株式会社 | Current measuring device |
| WO2023152949A1 (en) * | 2022-02-14 | 2023-08-17 | Tdk株式会社 | Signal processing method, signal processing device, and program |
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