CN110568898A - starting circuit of band-gap reference source - Google Patents
starting circuit of band-gap reference source Download PDFInfo
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- CN110568898A CN110568898A CN201910909215.8A CN201910909215A CN110568898A CN 110568898 A CN110568898 A CN 110568898A CN 201910909215 A CN201910909215 A CN 201910909215A CN 110568898 A CN110568898 A CN 110568898A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
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Abstract
The invention discloses a band gap reference source circuit, which comprises a band gap reference source main body circuit and a starting circuit; the starting circuit provides starting current for a main circuit of the band-gap reference source; the starting circuit comprises a first starting current and a second starting current, the starting currents are usually generated by a current bias circuit, the starting circuit can be completely turned off, leakage current does not exist, and the precision of the output voltage of the band-gap reference source circuit is not affected. The circuit can realize the soft start of the circuit, and the output voltage does not overshoot.
Description
Technical Field
the invention relates to the field of semiconductor integrated circuits, in particular to a starting circuit of a band-gap reference source.
Background
A bandgap reference circuit (BGR) is widely used in an integrated circuit, the bandgap reference circuit generally provides a stable reference voltage and a stable reference current for other modules, generally needs to start up following the establishment of a power supply, and the bandgap reference circuit which does not want to see overshoot during start-up generally consists of a start-up circuit and a bandgap reference main circuit. Fig. 1 is a basic bandgap reference source circuit, in which a start-up circuit is provided in a left-side dashed line box, and a bandgap reference source main circuit is provided in a right-side dashed line box.
The starting circuit and the main circuit of the bandgap reference source circuit shown in fig. 1 together comprise a plurality of PMOS transistors, a plurality of NMOS transistors, a plurality of triodes, an operational amplifier and three resistors, where N is usually an integer of 8, 24, 48, etc. The power supply is powered on, in the initial stage, as the circuit does not work, the node NST is at a low level, the PMOS tubes P6 and P7 are conducted, the node NST1 is charged to a high level, the NMOS tube N2 is conducted, the node PBIAS is pulled down, the PMOS tubes P1, P2, P3, P4 and P5 are conducted, so that current flows into the band gap reference main circuit, the loop circuit works to reach a stable point, and the band gap reference circuit is established; when the band gap reference circuit is established, the mirror current of the PMOS tube P1 flows to the resistor RST to generate voltage NST, when the voltage of the node NST reaches the starting voltage of the NMOS tube N1, N1 is conducted, P6 and P7 are conducted weakly, the node NST1 is pulled low, the NMOS tube N2 is turned off, and the starting process is ended; when a power supply is powered on in nanosecond level, due to a strong pull node PBIAS, the starting circuit can cause output voltage overshoot, the overshoot is generally solved by hanging a plurality of pF capacitors or even more capacitors on the output, and therefore the occupied area of a layout is increased.
Disclosure of Invention
The invention aims to solve the technical problem of providing a starting circuit of a band-gap reference source, which can realize the soft start of the band-gap reference circuit, has no overshoot of output voltage, has no electric leakage when the starting circuit is completely switched off, and does not influence the precision of the band-gap reference voltage.
In order to solve the above problems, the present invention provides a start-up circuit of a bandgap reference source, where the bandgap reference source circuit includes a bandgap reference source main circuit and a start-up circuit; the starting circuit provides starting current for a main circuit of the band-gap reference source:
the starting circuit comprises a first PMOS and six NMOS tubes.
And the source electrode of the first PMOS tube is connected with the power supply, and the drain electrode of the first PMOS tube is connected with the drain electrode of the first NMOS.
The grid electrode of the first NMOS is connected with the grid electrode of the second NMOS and is in short circuit with the drain electrode of the first NMOS, and the source electrodes of the first NMOS and the second NMOS are grounded.
The drain of the second NMOS is connected to the source of the third NMOS.
The drain of the third NMOS is connected to the first start-up current, the drain of the fourth NMOS is connected to the second start-up current, and the source of the fourth NMOS is connected to the gate of the third NMOS.
The source electrode of the fourth NMOS is also connected with a fifth NMOS and a sixth NMOS which are connected in parallel by two diodes, and the source electrodes of the fifth NMOS and the sixth NMOS respectively form two output ends.
The gate of the first PMOS forms a voltage output node.
In a further improvement, the first start-up current and the second start-up current are generated by a current bias circuit.
In a further improvement, the mirror current of the second NMOS transistor is greater than the first start-up current.
In a further improvement, the third, fourth, fifth and sixth NMOS are depletion NMOS.
The further improvement is that the drain of the first NMOS is defined as a node one, the grid of the fourth NMOS is defined as a node two, and the grid of the third NMOS is defined as a node three; in the starting stage of the starting circuit, the initial level of the first node is low level, the second NMOS is turned off, the first starting current charges the potential of the first node to high level, the fourth NMOS is turned on, the second starting current raises the potential of the third node, when the voltage of the third node is greater than the sum of Vgs of the sixth NMOS and the source electrode potential of the sixth NMOS and the sum of Vgs of the fifth NMOS and the source electrode potential of the fifth NMOS, current enters a bias current end of an operational amplifier of the band-gap reference source main body circuit and an emitter of a first amplifying tube of the band-gap reference source main body circuit, the output of the operational amplifier is low level, at the moment, the grid potential of the first PMOS is pulled down, the work of a feedback loop reaches a stable point, and the band-gap reference source starts to work.
in the turn-off stage of the starting circuit, when the band-gap reference source main body circuit works, the mirror current of the first PMOS flows through the first NMOS, and the mirror current of the second NMOS is larger than the first starting current; the second node is pulled low, a negative voltage is generated between the third node and the second node, the fourth NMOS is turned off, and the starting circuit is turned off.
The further improvement is that Vgs of the fourth NMOS is a negative value when the starting circuit is turned off, the starting circuit is completely turned off, no leakage current exists, and the precision of the output voltage of the band-gap reference source circuit is not influenced.
The invention is described.
drawings
Fig. 1 is a conventional bandgap reference source circuit, which includes a start-up circuit on the left side and a bandgap reference source main circuit on the right side.
Fig. 2 is a bandgap reference source circuit provided by the present invention, which includes a starting circuit on the left side and a bandgap reference source main circuit on the right side.
FIG. 3 is a simulation diagram of the start-up output of the present invention and a conventional architecture.
Detailed Description
As shown in fig. 2, the bandgap reference source circuit includes a bandgap reference source main circuit and a start circuit; the starting circuit provides starting current for a main circuit of the band-gap reference source:
The starting circuit comprises a first PMOS tube (P1) and six NMOS tubes (N1-N6).
And the source electrode of the first PMOS tube is connected with the power supply, and the drain electrode of the first PMOS tube is connected with the drain electrode of the first NMOS.
the grid electrode of the first NMOS is connected with the grid electrode of the second NMOS and is in short circuit with the drain electrode of the first NMOS, and the source electrodes of the first NMOS and the second NMOS are grounded.
The drain of the second NMOS is connected to the source of the third NMOS.
The drain of the third NMOS is connected to the first start current Ist1, the drain of the fourth NMOS is connected to the second start current Lst2, and the source of the fourth NMOS is connected to the gate of the third NMOS.
the source electrode of the fourth NMOS is also connected with a fifth NMOS and a sixth NMOS which are connected in parallel by two diodes, and the source electrodes of the fifth NMOS and the sixth NMOS respectively form two output ends.
The gate of the first PMOS forms the voltage output node PBIAS.
the first start-up current Ist1 and the second start-up current Ist2 are generated by a current bias circuit.
The mirror current of the second NMOS tube is larger than the first starting current Ist 1.
The third, fourth, fifth and sixth NMOS are usually depletion NMOS.
The band-gap reference source main circuit on the right side is not different from the traditional structure, and comprises second to fifth PMOS tubes (P2 to P5), an operational amplifier and three BJT triodes (Q1 to Q3), wherein the three triodes form three band-gap paths respectively.
Defining the drain of the first NMOS as node one (STP), the gate of the fourth NMOS as node two (NST), and the gate of the third NMOS as node three (NST 1); in the starting stage of the starting circuit, the initial level of the first node is low level, the second NMOS is turned off, the first starting current charges the potential of the first node to high level, the fourth NMOS is turned on, the second starting current raises the potential of the third node, when the voltage of the third node is greater than the sum of Vgs of the sixth NMOS and the source electrode potential of the sixth NMOS and the sum of Vgs of the fifth NMOS and the source electrode potential of the fifth NMOS, current enters a bias current end of an operational amplifier of the band-gap reference source main body circuit and an emitter of a first amplifying tube of the band-gap reference source main body circuit, the output of the operational amplifier is low level, namely the gate node PBIAS potential of the first PMOS is pulled down at the moment, the feedback loop works to reach a stable point, and the band-gap reference source starts to work.
In the starting circuit turn-off stage, when the band-gap reference source main body circuit works, the mirror current of the first PMOS flows through the first NMOS, and the mirror current of the second NMOS is larger than the first starting current; the second node is pulled low, a negative voltage is generated between the third node and the second node, the fourth NMOS is turned off, and the starting circuit is turned off.
Starting the circuit characteristic: the starting currents Ist1 and Ist2 are usually generated by a current bias circuit, and the N2 mirror current is larger than Ist 1; when the starting circuit is turned off, Vgs of the fourth NMOS is a negative value, the starting circuit is completely turned off, no leakage current exists, and the precision of the output voltage of the band-gap reference source circuit is not influenced. As shown in fig. 3, which is a simulation curve of the output voltage of the bandgap reference source circuit of the present invention and the conventional bandgap reference source circuit, the upper part of the simulation curve is the simulation curve of the conventional bandgap reference source circuit, a turning point is formed at the position indicated by an arrow, which is an overshoot formed when the start circuit starts, and the output voltage falls back after the overshoot, and the lower part of the simulation curve is the simulation curve of the present invention, which shows that the start gradually stabilizes to the standard output voltage value. The circuit can realize the soft start of the circuit, and the output voltage does not overshoot.
The above are merely preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A starting circuit of a band-gap reference source comprises a main circuit of the band-gap reference source and a starting circuit; the starting circuit provides starting current for a main circuit of the band-gap reference source, and is characterized in that:
The starting circuit comprises a first PMOS and six NMOS tubes;
The source electrode of the first PMOS tube is connected with a power supply, and the drain electrode of the first PMOS tube is connected with the drain electrode of the first NMOS;
The grid electrode of the first NMOS is connected with the grid electrode of the second NMOS and is in short circuit with the drain electrode of the first NMOS, and the source electrodes of the first NMOS and the second NMOS are grounded;
The drain electrode of the second NMOS is connected with the source electrode of the third NMOS;
The drain electrode of the third NMOS is connected with the first starting current, the drain electrode of the fourth NMOS is connected with the second starting current, and the source electrode of the fourth NMOS is connected with the grid electrode of the third NMOS;
The source electrode of the fourth NMOS is also connected with a fifth NMOS and a sixth NMOS which are connected in parallel by two diodes, and the source electrodes of the fifth NMOS and the sixth NMOS respectively form two output ends;
The gate of the first PMOS forms a voltage output node.
2. The start-up circuit of a bandgap reference source as claimed in claim 1, wherein: the first starting current and the second starting current are generated by a current bias circuit.
3. The start-up circuit of a bandgap reference source as claimed in claim 1, wherein: the mirror current of the second NMOS tube is larger than the first starting current.
4. the start-up circuit of a bandgap reference source as claimed in claim 1, wherein: the third, fourth, fifth and sixth NMOS are depletion type NMOS.
5. The start-up circuit of a bandgap reference source as claimed in claim 1, wherein: defining the drain electrode of the first NMOS as a node I, the grid electrode of the fourth NMOS as a node II, and the grid electrode of the third NMOS as a node III; in the starting stage of the starting circuit, the initial level of the first node is low level, the second NMOS is turned off, the first starting current charges the potential of the first node to high level, the fourth NMOS is turned on, the second starting current raises the potential of the third node, when the voltage of the third node is greater than the sum of Vgs of the sixth NMOS and the source electrode potential of the sixth NMOS and the sum of Vgs of the fifth NMOS and the source electrode potential of the fifth NMOS, current enters a bias current end of an operational amplifier of the band-gap reference source main body circuit and an emitter of a first amplifying tube of the band-gap reference source main body circuit, the output of the operational amplifier is low level, at the moment, the grid potential of the first PMOS is pulled down, the work of a feedback loop reaches a stable point, and the band-gap reference source starts to work.
6. The start-up circuit of a bandgap reference source as claimed in claim 1, wherein: in the starting circuit turn-off stage, when the band-gap reference source main body circuit works, the mirror current of the first PMOS flows through the first NMOS, and the mirror current of the second NMOS is larger than the first starting current; the second node is pulled low, a negative voltage is generated between the third node and the second node, the fourth NMOS is turned off, and the starting circuit is turned off.
7. The start-up circuit of a bandgap reference source as claimed in claim 6, wherein: when the starting circuit is turned off, Vgs of the fourth NMOS is a negative value, the starting circuit is completely turned off, no leakage current exists, and the precision of the output voltage of the band-gap reference source circuit is not influenced.
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| CN201910909215.8A CN110568898B (en) | 2019-09-25 | 2019-09-25 | Starting circuit of band-gap reference source |
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| CN201910909215.8A CN110568898B (en) | 2019-09-25 | 2019-09-25 | Starting circuit of band-gap reference source |
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| CN110568898A true CN110568898A (en) | 2019-12-13 |
| CN110568898B CN110568898B (en) | 2021-06-08 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112491405A (en) * | 2020-10-27 | 2021-03-12 | 北京智芯微电子科技有限公司 | Reference source based accelerated start circuit for chip |
| CN113126688A (en) * | 2019-12-31 | 2021-07-16 | 钜泉光电科技(上海)股份有限公司 | Reference generation circuit for inhibiting overshoot |
| CN113985957A (en) * | 2021-12-27 | 2022-01-28 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free quick-start band gap reference circuit, chip and electronic equipment |
| CN114442713A (en) * | 2020-11-02 | 2022-05-06 | 圣邦微电子（北京）股份有限公司 | Current reference starting circuit with micro power consumption |
| CN114690823A (en) * | 2020-12-25 | 2022-07-01 | 圣邦微电子（北京）股份有限公司 | Output stage circuit of power supply monitoring chip |
| CN116048167A (en) * | 2021-12-17 | 2023-05-02 | 成都海光微电子技术有限公司 | Self-adaptive starting power supply circuit, integrated circuit and self-adaptive starting circuit |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113126688A (en) * | 2019-12-31 | 2021-07-16 | 钜泉光电科技(上海)股份有限公司 | Reference generation circuit for inhibiting overshoot |
| CN113126688B (en) * | 2019-12-31 | 2023-01-10 | 钜泉光电科技(上海)股份有限公司 | Reference generation circuit for inhibiting overshoot |
| CN112491405A (en) * | 2020-10-27 | 2021-03-12 | 北京智芯微电子科技有限公司 | Reference source based accelerated start circuit for chip |
| CN112491405B (en) * | 2020-10-27 | 2022-02-01 | 北京智芯微电子科技有限公司 | Reference source based accelerated start circuit for chip |
| CN114442713A (en) * | 2020-11-02 | 2022-05-06 | 圣邦微电子（北京）股份有限公司 | Current reference starting circuit with micro power consumption |
| CN114442713B (en) * | 2020-11-02 | 2024-03-15 | 圣邦微电子（北京）股份有限公司 | Micro-power consumption current reference starting circuit |
| CN114690823A (en) * | 2020-12-25 | 2022-07-01 | 圣邦微电子（北京）股份有限公司 | Output stage circuit of power supply monitoring chip |
| CN116048167A (en) * | 2021-12-17 | 2023-05-02 | 成都海光微电子技术有限公司 | Self-adaptive starting power supply circuit, integrated circuit and self-adaptive starting circuit |
| CN113985957A (en) * | 2021-12-27 | 2022-01-28 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free quick-start band gap reference circuit, chip and electronic equipment |
| CN113985957B (en) * | 2021-12-27 | 2022-04-05 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free quick-start band gap reference circuit, chip and electronic equipment |
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