CN110556446B - Heterojunction thin-film solar cell and preparation method thereof - Google Patents
Heterojunction thin-film solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN110556446B CN110556446B CN201910668940.0A CN201910668940A CN110556446B CN 110556446 B CN110556446 B CN 110556446B CN 201910668940 A CN201910668940 A CN 201910668940A CN 110556446 B CN110556446 B CN 110556446B
- Authority
- CN
- China
- Prior art keywords
- film
- solar cell
- bismuth
- thin
- conductive substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 76
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 44
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 38
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000011787 zinc oxide Substances 0.000 claims abstract description 35
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 29
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 claims abstract description 27
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000001035 drying Methods 0.000 claims description 19
- 238000009713 electroplating Methods 0.000 claims description 19
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 13
- 239000011593 sulfur Substances 0.000 claims description 13
- 229910052717 sulfur Inorganic materials 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 12
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 12
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- KZFDVWZZYOPBQZ-UHFFFAOYSA-K bismuth;potassium;2-hydroxypropane-1,2,3-tricarboxylate Chemical class [K+].[Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KZFDVWZZYOPBQZ-UHFFFAOYSA-K 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 235000019441 ethanol Nutrition 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000009719 polyimide resin Substances 0.000 claims description 4
- 238000005987 sulfurization reaction Methods 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052979 sodium sulfide Inorganic materials 0.000 claims description 2
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 239000002131 composite material Substances 0.000 abstract description 5
- 230000031700 light absorption Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 3
- 231100000252 nontoxic Toxicity 0.000 abstract description 3
- 230000003000 nontoxic effect Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
- 239000011889 copper foil Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a heterojunction thin-film solar cell and a preparation method thereof. The solar cell comprises a transparent insulating layer, a noble metal film, a zinc sulfide film (zinc oxide film), a bismuth sulfide film, nano bismuth particles, a conductive substrate, nano bismuth particles, a bismuth sulfide film, a zinc sulfide film (zinc oxide film), a noble metal film and a transparent insulating layer from top to bottom. The preparation method can obtain a large-area and uniform composite film, and the used raw materials are nontoxic, have wide sources, are convenient to carry and are beneficial to popularization. According to the double-sided heterojunction thin-film solar cell provided by the invention, one side facing to sunlight is a main light absorption surface, and direct sunlight is directly utilized; the surface back to the sun can collect scattered light and reflected light in the environment, so that the photoelectric conversion efficiency is further improved, and a novel solar cell with high photoelectric conversion efficiency is expected to be obtained. The preparation method is simple and feasible, and is suitable for large-scale production and construction.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a bismuth sulfide/zinc sulfide (bismuth sulfide/zinc oxide) heterojunction thin-film solar cell and a preparation method thereof.
Background
With the continuous development of the worldwide economy and the rapid increase of the global population, the consumption of energy is continuously increased, and the consumption of energy is continuously increased in the future. However, the traditional fossil energy has its limitations in terms of both reserves and environment, and the development of new energy has been vigorously developed in various countries in order to avoid the serious consequences that a single energy structure system may have in the future. In the development of new energy, especially solar power generation, is favored by many researchers. In the development of solar cells, the key issues are to improve the photoelectric conversion efficiency and to reduce the manufacturing cost.
The solar cells that currently dominate the photovoltaic market are silicon-based thin film solar cells, Copper Indium Gallium Selenide (CIGS) thin film solar cells, and cadmium telluride (CdTe) thin film solar cells. In the three major types of thin film solar cells, the preparation process is complex, and in the CIGS and CdTe thin film solar cells, the problems of raw material scarcity, toxic pollution and the like exist, so that the large-area popularization and construction are not facilitated. The silicon-based thin-film solar cell has the problems of low conversion efficiency and high manufacturing cost, so that the silicon-based thin-film solar cell can further meet the requirement of large-area popularization and construction. Therefore, in the development of solar cells, it is imperative to select appropriate semiconductor materials, reduce manufacturing costs, and develop simple processes.
Bismuth sulfide belongs to important semiconductor compound materials of V-VI groups, has a forbidden band width of 1.30eV at room temperature, can absorb visible-near infrared light bands, and has a high absorption coefficient (-10)5cm-1) The semiconductor material has the excellent performances of no toxicity, high stability, environmental friendliness, photovoltaic conversion and the like, has great application value in the aspects of solar cells, photodiode arrays, infrared spectroscopy and the like, and is concerned by more and more researchers in recent years. The zinc sulfide is II-VI semiconductor material, the forbidden band width is about 3.7eV at room temperature, the wide forbidden band width semiconductor material is suitable for being used as window material of solar cells,the solar cell can reflect minority carriers, reduce the surface recombination of the carriers, and the wide band gap is optically transparent to a long-wave absorption waveband of the solar cell, so that the absorption loss of photons can be reduced, therefore, in a heterojunction thin-film solar cell formed by bismuth sulfide and zinc sulfide, short-wave and long-wave wavebands in visible light can be covered, and the photoelectric conversion efficiency of the solar cell is improved.
The zinc oxide and the zinc sulfide belong to II-VI semiconductor materials, the forbidden band width is 3.37eV, and the material is similar to the physical property of a zinc sulfide semiconductor, so that the zinc oxide and the zinc sulfide are also suitable for being used as window materials of solar cells and form heterojunction thin-film solar cells with bismuth sulfide.
In the three mainstream thin-film solar cells at present, the problems of complex preparation process and high preparation cost exist. In the invention, through continuous experiments, the double-sided bismuth sulfide/zinc sulfide heterojunction thin-film solar cell is prepared on the flexible metal substrate by using a simple process, and the double-sided bismuth sulfide/zinc sulfide heterojunction thin-film solar cell can absorb and convert sunlight through tests, so that a novel solar cell with high photoelectric conversion efficiency is expected to be obtained, and the manufacturing cost can be greatly reduced. Double-sided Bi produced on flexible metal substrates2S3/ZnS(Bi2S3the/ZnO) heterojunction thin-film solar cell is convenient to carry, can be produced in a large area, and has good commercial application prospect.
Disclosure of Invention
The invention aims to prepare novel double-sided Bi on a flexible metal substrate aiming at the defects of three main flow solar cells2S3/ZnS(Bi2S3the/ZnO) heterojunction thin-film solar cell, thereby being beneficial to large-area popularization and commercial production of the solar cell.
The invention adopts the following specific technical scheme:
a heterojunction thin-film solar cell comprises a conductive substrate, wherein one side or two sides of the conductive substrate are compounded with nano bismuth particles, a bismuth sulfide thin film, a zinc sulfide thin film or a zinc oxide thin film, a noble metal thin film and a transparent insulating layer by layer from a position close to the conductive substrate; one end of the conductive substrate is connected to one pole of the external circuit load through a lead and is separated from the plating layer through insulation treatment; the noble metal film is connected to the other pole of the external circuit load through a lead wire to form a current loop.
The plating layer formed on the conductive substrate may be formed on only one surface of the conductive substrate, or may be formed on both surfaces of the conductive substrate, and preferably, both surfaces of the conductive substrate are formed simultaneously.
The conductive substrate can be a metal sheet or a metal foil made of Al, Zn, Co, Ni, Sn, Cu, or a plastic, glass sheet or plate plated with these metals or other conductive materials.
The noble metal thin film may be a sputtered film of Au, Ag, Ir, Pt, Pd.
Another object of the present invention is to provide a method for manufacturing a heterojunction thin-film solar cell as described in any of the above aspects, which comprises the following steps:
1) cleaning the conductive substrate by dilute acid, acetone, absolute ethyl alcohol and deionized water in sequence, drying in vacuum, fixedly connecting the lead with one end of the conductive substrate, coating the conductive substrate by transparent insulating glue, and drying in vacuum;
2) putting one end of the sample treated in the step 1), which is not coated with the insulating glue, into an electroplating solution, depositing nano bismuth particles on the surface of a conductive substrate after electroplating to form a metal bismuth film, and then washing the metal bismuth film in deionized water;
3) placing the sample treated in the step 2) in hydrogen peroxide with the mass fraction of 20% -30% for oxidizing for 40-60 minutes, washing with deionized water, drying, then placing the sample in an environment with a sulfur source for vulcanizing, and generating a bismuth sulfide film on the surface of the metal bismuth film;
4) dipping the sample treated in the step 3) in a zinc-containing solution for 10-30 seconds, and then putting the sample into an oven for thermal decomposition to form a zinc oxide film on the surface of the bismuth sulfide film;
5) and (3) placing the sample treated in the step 4) in a vacuum coating machine, sputtering a layer of noble metal film on the surface of the zinc oxide film, connecting the lead with the noble metal film by using copper powder conductive adhesive, coating the solar cell by using transparent insulating adhesive, and drying to finish the assembly of the cell.
It should be noted that the samples mentioned in the above steps 2) to 5) refer to the conductive substrate combined with the corresponding composite layer after being processed by the corresponding steps, and the same is applied below.
The bismuth sulfide/zinc oxide (Bi) prepared by the method2S3/ZnO) heterojunction thin-film solar cell. However, zinc oxide and zinc sulfide belong to II-VI semiconductor materials, the forbidden band width is 3.37eV, and the physical properties of the two semiconductors are similar, so that the zinc oxide and the zinc sulfide are also suitable for being used as window materials of solar cells to form heterojunction thin-film solar cells with bismuth sulfide. Thus, there is also provided a bismuth sulfide/zinc sulfide (Bi)2S3The difference of the preparation method of the/ZnS) heterojunction thin-film solar cell is that in the step 4), a sample after the zinc oxide thin film is formed is cooled and then is continuously put into an environment with a sulfur source for vulcanization, so that the zinc oxide thin film is converted into a zinc sulfide thin film. It should be noted that after the sulfurization treatment, the noble metal film is also sputtered on the surface of the zinc sulfide film in step 5).
In addition to the above two production methods, the following further preferred methods can be employed.
In the steps 1) and 5), the transparent insulating glue is preferably epoxy resin or polyimide resin.
In the step 2), the preparation method of the metal bismuth film is preferably a pulse electroplating method, preferably, the electroplating solution is a saturated bismuth potassium citrate solution, the electroplating method is that the anode of the output voltage of the function signal generator is connected with the anode of the diode, so that the output waveform is a semi-sinusoidal carrier signal, the peak value is 8-10V, then, the cathode of the diode is connected with a metal bismuth, a lead on the conductive substrate is connected with the cathode of the function signal generator, and the metal bismuth and the conductive substrate are placed into the saturated bismuth potassium citrate solution to be electroplated to obtain the nano bismuth film.
In step 3) and/or step 4), the sulfur source used for the vulcanization is a sulfur-containing solution or a sulfur-containing vapor, preferably a sulfur-containing solution such as a solution of Thioacetamide (TAA), ammonium sulfide, thiourea and sodium sulfide.
In the step 4), the zinc-containing solution is preferably an alcohol solution of zinc nitrate, and the thermal decomposition method is to place the sample in an oven at 60 ℃ for 30-60 minutes.
In addition, for the preparation of the thin-film solar cell with the double-sided heterojunction, two surfaces of the conductive substrate can be immersed into electroplating solution for electroplating, metal bismuth films are formed on the two surfaces at the same time, and then the bismuth sulfide film, the zinc sulfide film or the zinc oxide film, the noble metal film and the transparent insulating layer are continuously, synchronously and symmetrically compounded in sequence on the basis of the metal bismuth films on the two surfaces in the subsequent preparation process.
The invention can provide a double-sided heterojunction thin-film solar cell, wherein one side of the double-sided heterojunction thin-film solar cell facing sunlight is a main light absorption surface, and direct sunlight is directly utilized; the surface back to the sun can collect scattered light and reflected light in the environment, so that the photoelectric conversion efficiency is further improved, and a novel solar cell with high photoelectric conversion efficiency is expected to be obtained. The preparation method provided by the invention can obtain large-area uniform Bi-coated double surfaces2S3/ZnS(Bi2S3The material used is nontoxic, the source is wide, and the composite film layer is convenient to carry and is beneficial to popularization.
Drawings
FIG. 1 shows a nano-bismuth layer obtained by pulse plating;
FIG. 2 shows a double-sided Bi2S3/ZnS(Bi2S3The structure of the/ZnO) heterojunction thin-film solar cell is shown schematically;
FIG. 3 shows a double-sided Bi2S3The photocurrent response I-t curve of the/ZnS heterojunction thin-film solar cell;
FIG. 4 shows a double-sided Bi2S3The photocurrent response I-t curve of the/ZnO heterojunction thin-film solar cell.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides aPreparation of double-sided Bi on flexible metal substrates2S3/ZnS(Bi2S3ZnO) heterojunction thin film solar cell, firstly plating a layer of nano bismuth on a copper foil, and then generating Bi on the copper foil through a series of chemical immersion methods as described above2S3/ZnS(Bi2S3/ZnO) heterojunction thin film, which is then assembled into a heterojunction thin film solar cell. The preparation method of the solar cell is simple and easy to implement, low in cost and easy to control, and the solar cell can absorb and convert sunlight through testing, so that a novel solar cell with high photoelectric conversion efficiency is expected to be obtained, is suitable for large-area popularization, and has a good application prospect.
The invention provides a preferable double-sided Bi based on a flexible metal substrate2S3The preparation method of the/ZnS heterojunction thin-film solar cell comprises the following steps:
(1) sequentially ultrasonically cleaning a flexible metal substrate by using dilute nitric acid, acetone, absolute ethyl alcohol and deionized water with the mass fraction of 4-6%, drying a sample in a vacuum drying oven, fixedly connecting a lead and one end of a conductive substrate, coating the conductive substrate with insulating glue (epoxy resin or polyimide resin), and keeping the constant temperature in the vacuum drying oven at 60 ℃ for 4-6 hours;
(2) and synchronously electroplating uniform nano bismuth films on two surfaces of one end of the flexible metal substrate, which is not coated with the insulating glue, by adopting a pulse electroplating method, then washing with deionized water, naturally drying and marking as a sample A.
(3) And (3) putting the sample A in 20-30% of hydrogen peroxide to oxidize the nano bismuth layer for 40-60 minutes, so that bismuth oxide is obtained on the surface of the metal bismuth film, washing with deionized water, naturally drying, and marking as a sample B.
(4) And putting the sample B in a 0.05-0.1M Thioacetamide (TAA) solution with the pH value of about 10, further vulcanizing to obtain a bismuth sulfide film, washing with deionized water, naturally drying, and marking as a sample C.
(5) And soaking the sample C in 0.1-0.5M zinc nitrate alcohol solution for 10-30 seconds, taking out and airing, then thermally decomposing in an oven at 60 ℃ for 30 minutes, and marking as a sample D.
(6) Putting the sample D in a Thioacetamide (TAA) solution with the pH value of about 10 and the concentration of 0.05-0.1M, vulcanizing to obtain a zinc sulfide film, washing with deionized water, and drying in vacuum to coat the two surfaces of the substrate with Bi2S3a/ZnS composite film.
(7) And placing the flexible metal substrate in a vacuum coating machine, sputtering and depositing a noble metal film on two sides, and finally forming the metal grid line.
(8) Connecting the lead with the upper electrode (namely two layers of noble metal films) of the solar cell by using copper powder conductive adhesive, fixing and compacting by using an insulating adhesive tape, finally coating epoxy resin to coat the solar cell, and drying under an oven to finish the assembly of the cell.
In order to save space, Bi therein2S3The preparation method of the/ZnO heterojunction thin-film solar cell is characterized in that the step (6) in the steps is removed, and the other steps are consistent.
In the preparation method, the flexible metal substrate in the step (1) can be selected from cheap and abundant metals including aluminum foil, copper foil, zinc foil and the like, and any material can be selected as the substrate under the actual condition and is treated as a conductive substrate, so that the lower electrode of the heterojunction solar cell is formed.
In the preparation method, the step (2) adopts a pulse electroplating method, the electroplating solution is a saturated bismuth potassium citrate solution, and the carrier wave is a sine wave. The positive pole of the output voltage of the function signal generator is connected with the positive pole of the diode to obtain a carrier signal with a semi-sinusoidal output waveform, and then the negative pole of the diode is connected with a metal bismuth with the purity of more than 99.99 percent. And connecting the flexible metal substrate to be plated with the negative electrode of the function signal generator, and putting the metal bismuth and the flexible metal substrate to be plated into a saturated bismuth potassium citrate solution for electroplating at the same time, so as to electroplate a layer of nano bismuth on the flexible metal substrate.
The following describes specific implementations and technical effects of the present invention with reference to embodiments.
Example 1
Double-sided Bi prepared in this example2S3/ZnS heterojunction thin-film solar cellAs shown in fig. 2, the battery structure uses a flexible conductive substrate as a carrier, and the conductive substrate uses a copper foil. The upper surface and the lower surface of the right end of the conductive substrate are respectively provided with a coating, the right end is sequentially provided with a transparent insulating layer, a noble metal film, a zinc sulfide film, a bismuth sulfide film, nano bismuth particles, a conductive substrate, nano bismuth particles, a bismuth sulfide film, a zinc sulfide film, a noble metal film and a transparent insulating layer from top to bottom, and the conductive substrate is used as a central plane for mirror symmetry. The left end of the conductive substrate is connected to one pole of an external circuit load through a lead, and the connecting position is coated with a transparent insulating layer for preventing the short circuit of the battery and separated from the plating layer through insulating treatment. The upper and lower layers of noble metal films at the right end of the conductive substrate are connected to the other pole of the external circuit load through a lead, so that a current loop is formed. As described above, the heterojunction thin-film solar cell assembled has the main light absorption surface facing the sunlight, and directly utilizes direct sunlight; the side facing away from the sun can collect scattered light as well as reflected light in the environment.
FIG. 1 is an electron microscope image of a layer of nano-bismuth electroplated on a copper foil. It should be appreciated that the use of a flexible metal substrate is advantageous in that it makes the process of making the solar cell simpler, easier to handle, carry, etc. In actual production operation, any material can be selected as a substrate according to needs, and the substrate is made into a lower electrode of the heterojunction thin-film solar cell as a conductive electrode through corresponding process treatment.
Double-sided Bi of the present example2S3The preparation method of the/ZnS heterojunction thin-film solar cell comprises the following steps:
(1) ultrasonically cleaning a copper foil (the area of the copper foil is 2cm multiplied by 4cm) by using dilute nitric acid, acetone, absolute ethyl alcohol and deionized water with the mass fraction of 5%, then drying in vacuum, fixedly connecting a lead and one end of a conductive substrate, coating the lead and one end of the conductive substrate with polyimide resin, wherein the coating area is 2cm multiplied by 1cm, and then keeping the temperature in a vacuum drying oven at 60 ℃ for 4-6 hours;
(2) connecting the positive pole of the output voltage of the function signal generator with the positive pole of a diode to obtain a carrier signal with a semi-sinusoidal output waveform, wherein the peak value is 10V, the frequency is 600Hz, and then connecting a metal bismuth to the negative pole of the diode; connecting the cleaned copper foil to the negative electrode of the function signal generator, and then simultaneously placing the metal bismuth and the copper foil in a saturated bismuth potassium citrate solution, wherein the electroplating area to be plated with the copper foil is the area without the insulating layer. And after the electroplating is finished, washing in deionized water, naturally airing, and simultaneously obtaining the nano bismuth film shown in the figure 1 on two sides of the copper foil.
(3) And soaking the nano bismuth film obtained in the electroplating area in 30% hydrogen peroxide for 60 minutes to oxidize the nano bismuth on the surface to generate bismuth oxide, washing with deionized water, and naturally drying.
(4) Preparing 0.06M Thioacetamide (TAA) solution, adjusting the pH value of the solution to about 10, placing the sample obtained in the step (3) in the TAA solution for 2 minutes to generate a bismuth sulfide film, taking out the bismuth sulfide film, washing the bismuth sulfide film with deionized water, and naturally drying the bismuth sulfide film.
(5) Preparing 0.1M zinc nitrate alcohol solution, soaking the sample obtained in the step (4) in the zinc nitrate alcohol solution for 30 seconds, taking out and airing, and placing in a 60 ℃ oven for constant temperature for 30 minutes to form the zinc oxide film.
(6) And (3) placing the sample obtained in the step (5) in a TAA solution with the pH value of about 10 for 10 seconds to generate a zinc sulfide film, taking out the zinc sulfide film, washing the zinc sulfide film with deionized water, and naturally airing the zinc sulfide film.
(7) The step (5) and the step (6) are a cycle period, and zinc sulfide films with different thicknesses can be obtained by continuous operation.
(8) And (4) shielding the shielding sheet on the sample obtained in the step (7), then placing the sample in a vacuum coating machine, depositing a noble metal film, and finally forming a metal grid line.
(9) Connecting the lead with an electrode (namely a noble metal film) on the solar cell by using copper powder conductive adhesive, fixing and compacting by using an insulating adhesive tape, finally coating epoxy resin, and drying in a drying oven at 60 ℃ to finish the assembly of the solar cell.
Double-sided Bi of the present invention2S3/ZnS(Bi2S3The preparation method of the/ZnO) heterojunction thin-film solar cell can obtain a large-area and uniform composite thin-film layer, and the used raw materials are nontoxic, have wide sources and are convenient to useIs easy to carry and popularize. The surface of the heterojunction thin-film solar cell facing the sunlight is a main light absorption surface, and direct sunlight is directly utilized; the side facing away from the sun can collect scattered light as well as reflected light in the environment. The double-sided daylighting solar panel is suitable for working in an environment with strong background light, and the scattered light and the reflected light in the environment are collected and utilized while the direct sunlight is utilized, so that the photoelectric conversion efficiency is further improved. The preparation method is simple and easy to implement, low in cost, easy to control, suitable for large-area popularization and good in application prospect.
FIG. 3 shows the double-sided Bi prepared in this example2S3And testing the transient photocurrent response of the/ZnS heterojunction thin-film solar cell. The light source is XQ500W adjustable xenon lamp light source produced by Shanghai blue Cheng electronics, Inc., and the transient photocurrent response test instrument is CHI760D electrochemical workstation produced by Shanghai Chenghua instruments, Inc. The result shows that the solar cell has better photoelectric conversion efficiency.
Example 2
In this embodiment, there is provided a medium Bi2S3A/ZnO heterojunction thin-film solar cell and a preparation method thereof. In order to save the narrative space, wherein Bi2S3The preparation method of the/ZnO heterojunction thin-film solar cell only needs to remove the steps (6) and (7) in the steps, and the other steps are consistent. Thus, a heterojunction thin-film solar cell having a structure substantially identical to that of example 1 was formed, but in which the zinc sulfide thin film was replaced with a zinc oxide thin film. FIG. 4 shows a double-sided Bi2S3The transient photocurrent response test result of the/ZnO heterojunction thin-film solar cell can also absorb sunlight and ambient light, and has better photoelectric conversion efficiency.
The above-described embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the present invention. Various changes and modifications may be made by one of ordinary skill in the pertinent art without departing from the spirit and scope of the present invention. For example, Bi on both sides2S3/ZnS(Bi2S3Preparation method of/ZnO) heterojunction thin-film solar cell As mentioned above, the examples only show individual specific parameters, and in actual operation, the specific parameters can be changed according to needs. In the above embodiment, the metal substrate has the plating layers on both surfaces thereof so as to utilize the sunlight, the ambient scattered light, and the reflected light at the same time, but in practice, the plating layer may be provided on only one surface. Therefore, the technical scheme obtained by adopting the mode of equivalent replacement or equivalent transformation is within the protection scope of the invention.
Claims (10)
1. A heterojunction thin-film solar cell is characterized by comprising a conductive substrate, wherein one side or two sides of the conductive substrate are compounded with nano bismuth particles, a bismuth sulfide thin film, a zinc sulfide thin film or a zinc oxide thin film, a noble metal thin film and a transparent insulating layer by layer from a position close to the conductive substrate; one end of the conductive substrate is connected to one pole of the external circuit load through a lead and is separated from the plating layer through insulation treatment; the noble metal film is connected to the other pole of the external circuit load through a lead to form a current loop;
the preparation method of the heterojunction thin-film solar cell comprises the following steps:
1) cleaning the conductive substrate by dilute acid, acetone, absolute ethyl alcohol and deionized water in sequence, drying in vacuum, fixedly connecting the lead with one end of the conductive substrate, coating the conductive substrate by transparent insulating glue, and drying in vacuum;
2) putting one end of the sample treated in the step 1), which is not coated with the insulating glue, into an electroplating solution, depositing nano bismuth particles on the surface of a conductive substrate after electroplating to form a metal bismuth film, and then washing the metal bismuth film in deionized water;
3) placing the sample treated in the step 2) in hydrogen peroxide with the mass fraction of 20% -30% for oxidizing for 40-60 minutes, washing with deionized water, drying, then placing the sample in an environment with a sulfur source for vulcanizing, and generating a bismuth sulfide film on the surface of the metal bismuth film;
4) dipping the sample treated in the step 3) in a zinc-containing solution for 10-30 seconds, and then putting the sample into an oven for thermal decomposition to form a zinc oxide film on the surface of the bismuth sulfide film;
5) and (3) placing the sample treated in the step 4) in a vacuum coating machine, sputtering a layer of noble metal film on the surface of the zinc oxide film, connecting the lead with the noble metal film by using copper powder conductive adhesive, coating the solar cell by using transparent insulating adhesive, and drying to finish the assembly of the cell.
2. The heterojunction thin-film solar cell of claim 1, wherein the conductive substrate is a metal sheet or a metal foil of Al, Zn, Co, Ni, Sn, Cu, or a plastic, glass sheet, or plate plated with these metals or other conductive materials.
3. The heterojunction thin film solar cell of claim 1, wherein the noble metal thin film is a sputtered film of Au, Ag, Ir, Pt, Pd.
4. The heterojunction thin-film solar cell of claim 1, wherein in the step 4), after the sample on which the zinc oxide thin film is formed is cooled, the sample is continuously put into an environment with a sulfur source for sulfurization, so that the zinc oxide thin film is converted into a zinc sulfide thin film.
5. The heterojunction thin-film solar cell of claim 1, wherein in step 1) and step 5), the transparent insulating adhesive is epoxy resin or polyimide resin.
6. The heterojunction thin-film solar cell of claim 1, wherein in the step 2), the preparation method of the metal bismuth thin film is a pulse plating method, the plating solution is a saturated bismuth potassium citrate solution, the plating method is to connect the positive electrode of the output voltage of the function signal generator with the positive electrode of the diode, so that the output waveform is a semi-sinusoidal carrier signal, the peak value is 8-10V, then connect a piece of metal bismuth at the negative electrode of the diode, connect the conducting wire on the conducting substrate with the negative electrode of the function signal generator, and simultaneously place the metal bismuth and the conducting substrate into the saturated bismuth potassium citrate solution to obtain the nano bismuth thin film by plating.
7. The heterojunction thin film solar cell of claim 1 or 4, wherein in step 3) and/or step 4), the sulfur source used for the sulfurization is a sulfur-containing solution or a sulfur-containing vapor.
8. A heterojunction thin-film solar cell as claimed in claim 1 or 4, wherein in step 3) and/or step 4) the sulfur source used for the sulfurization is a sulfur-containing solution, such as a solution of Thioacetamide (TAA), ammonium sulfide, thiourea and sodium sulfide.
9. The heterojunction thin-film solar cell of claim 1, wherein in the step 4), the zinc-containing solution is an alcohol solution of zinc nitrate, and the thermal decomposition is performed by placing the sample in an oven at 60 ℃ for 30-60 minutes.
10. The heterojunction thin-film solar cell of claim 1, wherein both surfaces of the conductive substrate are immersed in an electroplating solution for electroplating, a bismuth metal film is simultaneously formed on both surfaces, and then a bismuth sulfide film, a zinc sulfide film or a zinc oxide film, a noble metal film and a transparent insulating layer are continuously, synchronously and symmetrically compounded in sequence on the basis of the bismuth metal films on both surfaces in the subsequent preparation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910668940.0A CN110556446B (en) | 2019-07-23 | 2019-07-23 | Heterojunction thin-film solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910668940.0A CN110556446B (en) | 2019-07-23 | 2019-07-23 | Heterojunction thin-film solar cell and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110556446A CN110556446A (en) | 2019-12-10 |
| CN110556446B true CN110556446B (en) | 2020-12-08 |
Family
ID=68735986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910668940.0A Expired - Fee Related CN110556446B (en) | 2019-07-23 | 2019-07-23 | Heterojunction thin-film solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110556446B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113481546B (en) * | 2021-08-13 | 2024-03-22 | 辽宁大学 | Zinc oxide/zinc sulfide composite film photoelectrode and recovery device for solar photo-deposited noble metal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022569A (en) * | 2012-07-18 | 2014-02-03 | Kobe Steel Ltd | Photoelectric conversion element and manufacturing method therefor |
| CN104241529A (en) * | 2013-06-17 | 2014-12-24 | 宁波大学 | Laminated organic solar battery and manufacturing method thereof |
| CN104998662A (en) * | 2015-07-08 | 2015-10-28 | 新疆大学 | Solid phase preparation method for bismuth sulfide-zinc sulfide heterojunction nano material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010110888A1 (en) * | 2009-03-23 | 2010-09-30 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum confinement solar cell fabriacated by atomic layer deposition |
| EP3223319A1 (en) * | 2016-03-24 | 2017-09-27 | Nokia Technologies Oy | A quantum dot photodetector apparatus and associated methods |
-
2019
- 2019-07-23 CN CN201910668940.0A patent/CN110556446B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014022569A (en) * | 2012-07-18 | 2014-02-03 | Kobe Steel Ltd | Photoelectric conversion element and manufacturing method therefor |
| CN104241529A (en) * | 2013-06-17 | 2014-12-24 | 宁波大学 | Laminated organic solar battery and manufacturing method thereof |
| CN104998662A (en) * | 2015-07-08 | 2015-10-28 | 新疆大学 | Solid phase preparation method for bismuth sulfide-zinc sulfide heterojunction nano material |
Non-Patent Citations (2)
| Title |
|---|
| Controlled in situ synthesis of Bi2S3/ZnS nano film and its photoelectrochemical and photoresponsive performances;Shuangshuang Hu等;《Optoelectronics and Advanced Materials-rapid Communications》;20190630;第13卷(第5-6期);正文第369页实验部分 * |
| Device Design and Photovoltaic Performance of Heterojunction Solar Cells Using Ultra-Thin Bi2S3 Photoabsorber;Sandip Das等;《IEEE Xplore》;20190110;正文第2页电池结构部分 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110556446A (en) | 2019-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7560641B2 (en) | Thin film solar cell configuration and fabrication method | |
| KR20090104304A (en) | Bulk heterojunction solar cell and Method of manufacturing the same | |
| CN103915516B (en) | A kind of sodium doping method of CIGS base film photovoltaic material | |
| CN104120467B (en) | Copper-zinc-tin film material with controllable components, copper-zinc-tin sulfenyl solar battery and preparation method of the two | |
| CN108447936B (en) | Preparation method of antimony-based double-junction laminated solar cell | |
| KR101523246B1 (en) | Double buffer comprising ZnS and solar cell using the same, and a method of manufacturing them | |
| JP2014160812A (en) | Solar cell and method of manufacturing solar cell | |
| CN103762257A (en) | Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell | |
| CN112038439A (en) | CZTSSe flexible double-sided solar cell and preparation method thereof | |
| Georgieva et al. | Low cost solar cells based on cuprous oxide | |
| CN110556446B (en) | Heterojunction thin-film solar cell and preparation method thereof | |
| CN104465807A (en) | CZTS nanometer array thin film solar photovoltaic cell and manufacturing method thereof | |
| CN101882653B (en) | Preparation method of solar battery based on nano CdS (Cadmium Sulfide) film | |
| CN103346194A (en) | Copper indium gallium selenium solar battery device and preparing method thereof | |
| CN105140335A (en) | CZTS film preparation method on transparent conductive substrate through one step | |
| CN105552166A (en) | Method for preparing copper-indium-diselenide photoelectric film by two-step method of nitrate system | |
| KR20110038391A (en) | Method for fabricating chalcogenide solar cell | |
| WO2011052646A1 (en) | Photoelectric conversion device, photoelectric conversion module, and method for manufacturing photoelectric conversion device | |
| Munn et al. | Fabrication of CZTS-based thin film solar cells using all-solution processing and pulsed light crystallization | |
| Alkhayat et al. | Study of Degradation of Cu (In, Ga) Se 2 Solar Cell Parameters due to Temperature | |
| CN113078224A (en) | Transparent conductive glass copper indium selenium thin-film solar cell device and preparation method and application thereof | |
| Bhat et al. | Back illuminated high efficiency thin film Cu2S/CdS solar cells | |
| JPWO2011052616A1 (en) | Method for producing chalcogen compound semiconductor layer and method for producing photoelectric conversion device | |
| CN105529243A (en) | Method for copper indium diselenide optoelectronic film by sulphate system in two-step process | |
| CN111876809A (en) | Preparation method and application of antimony selenide film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201208 Termination date: 20210723 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |