CN112038439A - CZTSSe flexible double-sided solar cell and preparation method thereof - Google Patents

CZTSSe flexible double-sided solar cell and preparation method thereof Download PDF

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CN112038439A
CN112038439A CN202010951494.7A CN202010951494A CN112038439A CN 112038439 A CN112038439 A CN 112038439A CN 202010951494 A CN202010951494 A CN 202010951494A CN 112038439 A CN112038439 A CN 112038439A
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cztsse
layer
double
sided
flexible
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程树英
邓辉
孙全震
杨志远
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Fuzhou University
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • HELECTRICITY
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    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876Particular processes or apparatus for batch treatment of the devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a CZTSSe flexible double-sided solar cell, which comprises a CZTSSe solar cell on the front side and the back side and a same flexible substrate connected in the middle; the front side and the back side of the double-sided solar cell are structurally provided with a flexible molybdenum foil substrate, a molybdenum selenization layer, a CZTSSe absorption layer, a CdS buffer layer, a ZnO/ITO window layer and a metal electrode from inside to outside. The preparation method comprises the following steps: (1) cleaning two sides of the molybdenum foil simultaneously by using an electrochemical method; (2) preparing a double-sided CZTSSe film by a solution method and performing selenization treatment on the double-sided CZTSSe film together; (3) simultaneously depositing a double-sided buffer layer in a chemical water bath; (4) depositing the double-sided window layer by an alternate sputtering method; (5) and (3) preparing the double-sided metal electrode by an evaporation method. The invention can utilize sunlight in all directions and at multiple angles, improves the utilization rate and the conversion efficiency of the sunlight, can be made into flexible carrying products, suspension type photovoltaic decorative products and the like, and realizes the integration of photovoltaic architectural decoration.

Description

CZTSSe flexible double-sided solar cell and preparation method thereof
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a CZTSSe flexible double-sided solar cell and a preparation method thereof.
Background
Cu of kesterite structure2ZnSn(S, Se)4(abbreviated as CZTSSe) has suitable energy band gap (1.02-1.5 eV) and absorption coefficient (10 eV)4 cm-1) And the composition elements are richer, cheap and environment-friendly, and the film is considered to be one of film battery absorption layer materials with better development prospect in the future. The CZTSSe flexible thin film solar cell has the advantages of light weight, low cost, flexibility and the like, and has a great application value in the application fields of portable equipment, mobile power supplies and the like. The common flexible substrates are polyimide, aluminum foil, molybdenum foil, flexible glass, stainless steel and the like, and the efficiency of the obtained flexible CZTSSe battery is over 10 percent. Because the molybdenum substrate has good thermal stability and chemical stability, the molybdenum substrate can not only ensure that the prefabricated layer can carry out selenization annealing treatment at higher temperature and the substrate is not modified, but also save the working procedure of depositing the back electrode molybdenum film, simplify the process flow and reduce the cost. The molybdenum foil is used as a flexible substrate to obtain a better application effect in the CZTSSe solar cell, has double-sided conductivity, and is one of the best choices as a double-sided cell substrate.
At present, flexible solar cells are all of a single-sided structure, can only absorb sunlight in one direction, and the utilization rate of the sunlight is not high; in addition, the solar cell on the single surface cannot be suspended, so that the occupied area is large, and the application in the aspect of photovoltaic building and decoration integration is hindered. Therefore, the novel solar cell structure with double flexible surfaces is designed, sunlight can be absorbed by the front surface and the back surface of the device, solar power generation is achieved, the sunlight is utilized at multiple angles, the utilization efficiency of the sunlight is improved, and the development of photovoltaic integration is promoted.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides the CZTSSe flexible double-sided solar cell and the preparation method thereof, so that the problems of incapability of fully utilizing sunlight, large occupied area, lack of process technology and the like in the prior art are solved.
In order to achieve the purpose, the invention provides a CZTSSe flexible double-sided solar cell, wherein the front side and the back side of the CZTSSe flexible double-sided solar cell are flexible thin film solar cells, the front side and the back side of the CZTSSe flexible double-sided solar cell are connected through the same flexible substrate, and the front side and the back side of the CZTSSe flexible double-sided solar cell can be independently used for photovoltaic power generation and can also be used; the front side and the back side of the double-sided solar cell are structurally provided with a flexible substrate, a molybdenum selenization layer, a CZTSSe absorption layer, a CdS buffer layer, a ZnO/ITO window layer and a metal electrode from inside to outside.
Furthermore, the absorption layers of the front and back solar cells are both Cu2ZnSn(Sx, Se1-x)4(abbreviated as CZTSSe) thin film, wherein 0<x<1。
Furthermore, the flexible substrate is a molybdenum foil, the front surface and the back surface of the flexible substrate are polished, the flexible substrate can be bent on the two surfaces, and the thickness of the flexible substrate is 0.5-2 mm.
Further, the thickness of the Mo selenization layer is 200-2000 nm, the thickness of the CZTSSe absorption layer is 1-4 μm, the thickness of the CdS buffer layer is 40-100 nm, and the thicknesses of a ZnO layer and an ITO layer in the ZnO/ITO window layer are 40-60 nm and 150-300 nm respectively.
Furthermore, the metal electrode is an Ag or Al electrode, and the thickness of the metal electrode is 300-600 nm.
The invention also provides a preparation method of the CZTSSe flexible double-sided solar cell, which comprises the following steps:
(1) cleaning two sides of the substrate: cleaning two sides of the molybdenum foil at one time by adopting an electrochemical cleaning technology;
(2) double-sided CZTSSe layer preparation: respectively spin-coating CZTSSe precursor solution on two surfaces of a molybdenum foil substrate by adopting a precursor solution spin-coating technology, then obtaining a CZTSSe film in an overhead annealing mode, and repeatedly spin-coating and annealing for multiple times to obtain a film with the thickness of 1-4 mu m;
(3) preparing a double-sided Mo selenide layer: putting the CZTSSe film sample into a rapid thermal annealing furnace, and selenizing the CZTSSe film and the Mo substrate by adopting a high-temperature selenizing technology to obtain a crystallized CZTSSe layer and a crystallized Mo selenizing layer;
(4) preparing a double-sided CdS buffer layer: depositing a CdS layer on the CZTSSe films on the front and back surfaces by adopting a chemical water bath deposition method, and controlling the deposition condition to obtain a film with the thickness of 40-100 nm;
(5) preparing a double-sided ZnO layer: depositing ZnO layers on the front CdS layer and the back CdS layer twice by adopting a magnetron sputtering method, and changing the deposition conditions to obtain the ZnO layers with the thickness of 40-60 nm;
(6) preparing a double-sided ITO layer: depositing ITO layers on the front ZnO layer and the back ZnO layer twice by adopting a magnetron sputtering method, and changing the deposition conditions to obtain the ITO layers with the thickness of 150-300 nm;
(7) preparing a double-sided metal electrode: and depositing Ag or Al electrodes on the double-sided ITO layer twice by adopting a vacuum evaporation technology, and changing the deposition conditions to obtain the ITO film with the thickness of 300-600 nm.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
(1) the flexible double-sided solar cell has the capability of absorbing sunlight on the front side and the back side, so that the sunlight is utilized at multiple angles, and the utilization efficiency of the sunlight is improved.
(2) The flexible double-sided solar cell can be placed in a suspension mode, can generate electricity in the whole process of solar east-rising-west-falling, and greatly reduces the occupied area.
(3) The flexible double-sided solar cell adopts the molybdenum foil as the middle flexible substrate. The metal molybdenum foil can be well matched with a CZTSSe solar cell process, has good flexibility and double-sided conductivity, and provides substrate support for a double-sided cell.
(4) The flexible double-sided solar cell uses the bottom lining structure, can ensure that the double-sided cell works independently and is not restricted. The double-sided battery devices share one conductive substrate, so that anode common connection is realized, and the serial and parallel connection cost of the devices is saved.
(5) According to the preparation process (such as preparation of a CZTSSe film, preparation of a CdS film, preparation of a molybdenum selenide layer and the like) adopted by the flexible double-sided solar cell, two sides of the film are obtained in one preparation process, so that time and cost are greatly saved, and the process is extremely innovative.
Drawings
Fig. 1 is a schematic structural diagram of a CZTSSe flexible double-sided solar cell provided in an embodiment of the present invention;
FIG. 2 is an SEM image of a cross section of a double-sided flexible CZTSSe solar cell of the present invention;
fig. 3 is a performance curve of the front and back sides of a CZTSSe flexible double-sided solar cell provided by an embodiment of the invention;
in the figure: the device comprises a 1-flexible substrate, a 2-molybdenum selenization layer, a 3-CZTSSe absorption layer, a 4-CdS buffer layer, a 5-ZnO layer, a 6-ITO layer and a 7-metal electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The preparation process of the double-sided CZTSSe film comprises the following steps:
(1) adding simple substances of copper, zinc, tin, sulfur and selenium into a mixed solution of ethylenediamine and ethanedithiol according to a certain proportion, and heating and stirring to obtain a uniform and clear CZTSSe precursor solution.
(2) And transferring the CZTSSe precursor solution to a glove box, dripping the CZTSSe precursor solution onto one surface (front surface) of the flexible molybdenum foil, spin-coating at 3000 rpm for 30s, and sintering at 300 ℃ on a hot table to obtain a thin CZTSSe film on the front surface of the molybdenum foil.
(3) And (3) dripping the CZTSSe precursor solution on the reverse side of the molybdenum foil, spin-coating at 3000 rpm for 30s, then making the sample overhead, placing the sample above a hot table, and sintering at 300 ℃, thus obtaining a thin CZTSSe film on the reverse side of the molybdenum foil.
(4) Repeating the processes of spin coating and sintering, alternately depositing CZTSSe films on the front and back surfaces of the film, repeating the processes for 9 times, and obtaining double-sided CZTSSe films with the thickness of 1.8 mu m on the front and back surfaces of the molybdenum foil.
Example 2
The specific preparation process of the CZTSSe flexible double-sided solar cell comprises the following steps:
(1) under the condition of constant pressure, the molybdenum foil is placed in a mixed solution of methanol (85mL) and concentrated sulfuric acid (15mL) to remove surface impurities and molybdenum oxide by electrochemical cleaning. Then ultrasonic cleaning is carried out by deionized water, isopropanol and absolute ethyl alcohol in sequence for 5 minutes each, and then blow drying is carried out by nitrogen.
(2) Respectively spin-coating CZTSSe precursor solution on two surfaces of a molybdenum foil substrate by adopting a precursor solution spin-coating technology, then obtaining a CZTSSe film in an overhead annealing mode, and repeatedly spin-coating and annealing for multiple times to obtain a film with the thickness of 1-4 mu m;
(3) putting the Mo sheet sample with the CZTSSe layer and selenium powder into a closed stone cartridge, putting the sealed stone cartridge into a rapid thermal annealing furnace under the protection of nitrogen, and selenizing the sealed stone cartridge for 15min at the temperature of 550 ℃ to obtain a crystallized CZTSSe layer and a Mo selenizing layer;
(4) and (3) depositing a CdS buffer layer with the thickness of 80 nm on the CZTSSe films on the front and back surfaces by adopting a chemical water bath deposition method, wherein the water bath temperature is 78 ℃, and the deposition time is 16.5 minutes.
(5) Depositing ZnO layers with the thickness of 50 nm on the front CdS layer and the back CdS layer by adopting a magnetron sputtering method, and setting the technological parameters of sputtering as follows: background vacuum degree<1.0×10-4 Pa, the working vacuum degree is 2 Pa, the radio frequency sputtering power is 80W, and the sputtering time is 8 min.
(6) Depositing ZnO layers with the thickness of 200 nm on the positive and negative ZnO layers by a magnetron sputtering method twice, and setting the technological parameters of sputtering as follows: background vacuum degree<1.0×10-4 Pa, the working vacuum degree of 0.5 Pa, the radio frequency sputtering power of 35W and the sputtering time of 33 min.
(7) Vacuum evaporation method is adopted, and vacuum degreeIs 3 x 10-3pa, the evaporation current is 120A, and Ag or Al electrodes are deposited on the double-sided ITO layer twice in sequence, wherein the deposition thickness is 110 nm.
As shown in fig. 1, the front and back surfaces of a CZTSSe flexible double-sided solar cell are both flexible thin film solar cells, the middle is connected through the same flexible substrate, and the cells on the front and back surfaces are of a symmetrical structure, and can be used for photovoltaic power generation alone or simultaneously; the front side and the back side of the double-sided solar cell are structurally provided with a flexible substrate 1, a molybdenum selenide layer 2, a CZTSSe absorption layer 3, a CdS buffer layer 4, a ZnO layer 5, an ITO layer 6 and a metal electrode 7 from inside to outside. The flexible substrate 1 is a molybdenum foil, the front side and the back side of the flexible substrate are polished, the flexible substrate can be bent at the two sides, and the thickness of the flexible substrate is 0.5-2 mm; the thickness of the Mo selenization layer 2 is 200-2000 nm; the thickness of the CZTSSe absorption layer 3 is 1-4 mu m; the CdS buffer layer 4 is 40-100 nm thick; the thicknesses of the ZnO layers 5 are 40-60 nm respectively; the thickness of the ITO layer 6 is 150-300 nm; the metal electrode is an Ag or Al electrode 7, and the thickness of the metal electrode is 300-600 nm.
As shown in fig. 2, the multilayer films on the front side and the back side are uniformly distributed on two sides of the Mo foil flexible substrate, and the thickness of the whole layer is about 60 μm; the shape and thickness of the positive and negative side batteries are the same.
As shown in fig. 3, both sides of the CZTSSe flexible double-sided solar cell can work, and both sides can utilize solar light. From the current-voltage curve, the open voltage of the front CZTSSe battery is 0.41V, and the short-circuit current density is 32.1 mA/cm2Fill factor of 61%, photoelectric conversion efficiency of 8%; the open voltage of the reverse CZTSSe battery is 0.4V, and the short-circuit current density is 31.7 mA/cm2Fill factor is 57%, photoelectric conversion efficiency is 7.3%. The devices on the front side and the back side have conversion efficiency, and the conversion efficiency is relatively close, so that the double-sided battery can utilize bidirectional sunlight simultaneously, and the sunlight utilization rate is greatly improved.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (6)

1. A CZTSSe flexible double-sided solar cell is characterized in that the front side and the back side of the cell are both flexible thin film solar cells, and the front side and the back side of the cell are connected through a same flexible substrate; the front side and the back side of the battery are structurally provided with a flexible substrate, a molybdenum selenization layer, a CZTSSe absorption layer, a CdS buffer layer, a ZnO/ITO window layer and metal electrodes from inside to outside.
2. The CZTSSe flexible bifacial solar cell of claim 1, wherein the absorber layers of both the front and back solar cells are Cu2ZnSn(Sx, Se1-x)4Wherein 0 is<x<1。
3. The CZTSSe flexible bifacial solar cell of claim 1, wherein the flexible substrate is a molybdenum foil, both sides of which are polished and can be bent on both sides, and the thickness of which is 0.5 mm to 2 mm.
4. The CZTSSe flexible double-sided solar cell according to claim 1, wherein the thickness of the Mo selenization layer is 200-2000 nm, the thickness of the CZTSSe absorption layer is 1-4 μm, the thickness of the CdS buffer layer is 40-100 nm, and the thicknesses of the ZnO layer and the ITO layer in the ZnO/ITO window layer are 40-60 nm and 150-300 nm respectively.
5. The CZTSSe flexible bifacial solar cell of claim 1, wherein the metal electrode is an Ag or Al electrode and has a thickness of 300-600 nm.
6. A method of preparing a CZTSSe flexible bifacial solar cell according to any one of claims 1 to 5, comprising the steps of:
(1) cleaning two sides of the substrate: cleaning two sides of the molybdenum foil at one time by adopting an electrochemical cleaning technology;
(2) double-sided CZTSSe layer preparation: respectively spin-coating CZTSSe precursor solution on two surfaces of a molybdenum foil substrate by adopting a precursor solution spin-coating technology, then obtaining a CZTSSe film in an overhead annealing mode, and repeatedly spin-coating and annealing for multiple times to obtain a film with the thickness of 1-4 mu m;
(3) preparing a double-sided Mo selenide layer: putting the CZTSSe film sample into a rapid thermal annealing furnace, and selenizing the CZTSSe film and the molybdenum substrate by adopting a high-temperature selenizing technology to obtain a crystallized CZTSSe layer and a Mo selenizing layer;
(4) preparing a double-sided CdS buffer layer: depositing a CdS layer on the CZTSSe films on the front and back surfaces by adopting a chemical water bath deposition method, and controlling the deposition condition to obtain a film with the thickness of 40-100 nm;
(5) preparing a double-sided ZnO layer: depositing ZnO layers on the front CdS layer and the back CdS layer twice by adopting a magnetron sputtering method, and changing the deposition conditions to obtain the ZnO layers with the thickness of 40-60 nm;
(6) preparing a double-sided ITO layer: depositing ITO layers on the front ZnO layer and the back ZnO layer twice by adopting a magnetron sputtering method, and changing the deposition conditions to obtain the ITO layers with the thickness of 150-300 nm;
(7) preparing a double-sided metal electrode: and depositing Ag or Al electrodes on the double-sided ITO layer twice by adopting a vacuum evaporation technology, and changing the deposition conditions to obtain the ITO film with the thickness of 300-600 nm.
CN202010951494.7A 2020-09-11 2020-09-11 CZTSSe flexible double-sided solar cell and preparation method thereof Pending CN112038439A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113097314A (en) * 2021-03-31 2021-07-09 福州大学 Flexible antimony sulfide thin-film solar cell and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140109967A1 (en) * 2012-10-24 2014-04-24 Korea Institute Of Science And Technology Thin film solar cells for windows based on low cost solution process and fabrication method thereof
CN104600146A (en) * 2014-12-23 2015-05-06 江西科技学院 Double-sided thin-film solar cell
CN106098844A (en) * 2016-06-29 2016-11-09 福州大学 A kind of preparation method of copper-zinc-tin-sulfur solaode based on flexible molybdenum substrate
US20170162737A1 (en) * 2015-12-02 2017-06-08 Solarworld Innovations Gmbh Bifacial photovoltaic module
CN210723052U (en) * 2019-09-09 2020-06-09 南京朗伯尼特新能源有限公司 Double-sided double-system film photovoltaic module
CN111640820A (en) * 2020-06-02 2020-09-08 东北师范大学 Simple and convenient method for improving back contact of copper-zinc-tin-sulfur-selenium film photovoltaic device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140109967A1 (en) * 2012-10-24 2014-04-24 Korea Institute Of Science And Technology Thin film solar cells for windows based on low cost solution process and fabrication method thereof
CN104600146A (en) * 2014-12-23 2015-05-06 江西科技学院 Double-sided thin-film solar cell
US20170162737A1 (en) * 2015-12-02 2017-06-08 Solarworld Innovations Gmbh Bifacial photovoltaic module
CN106098844A (en) * 2016-06-29 2016-11-09 福州大学 A kind of preparation method of copper-zinc-tin-sulfur solaode based on flexible molybdenum substrate
CN210723052U (en) * 2019-09-09 2020-06-09 南京朗伯尼特新能源有限公司 Double-sided double-system film photovoltaic module
CN111640820A (en) * 2020-06-02 2020-09-08 东北师范大学 Simple and convenient method for improving back contact of copper-zinc-tin-sulfur-selenium film photovoltaic device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
董丽美: "基于柔性钼衬底的CZTS薄膜及其电池的制备", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113097314A (en) * 2021-03-31 2021-07-09 福州大学 Flexible antimony sulfide thin-film solar cell and preparation method thereof

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