CN110552054B

CN110552054B - Crystal pulling furnace

Info

Publication number: CN110552054B
Application number: CN201910933783.1A
Authority: CN
Inventors: 全弘湧
Original assignee: Xian Eswin Silicon Wafer Technology Co Ltd; Xian Eswin Material Technology Co Ltd
Current assignee: Xian Eswin Silicon Wafer Technology Co Ltd; Xian Eswin Material Technology Co Ltd
Priority date: 2019-09-29
Filing date: 2019-09-29
Publication date: 2021-11-16
Anticipated expiration: 2039-09-29
Also published as: CN110552054A

Abstract

The invention provides a crystal pulling furnace, comprising: the furnace body is internally limited with a cavity and is provided with a crystal pulling port communicated with the cavity; the crucible is arranged in the cavity to contain silicon materials; the heat insulation piece is arranged along the inner wall of the furnace body; the gate valve is arranged on the furnace body to open or close the crystal pulling port; the heat insulation structure is arranged on the gate valve to prevent heat from dissipating from the crystal pulling opening. According to the crystal pulling furnace provided by the embodiment of the invention, in the polycrystalline silicon melting process, the crystal pulling opening of the crystal pulling furnace is sealed by the gate valve, so that volatile components in the polycrystalline silicon are prevented from volatilizing, the heat dissipation of heat from the crystal pulling opening can be reduced by the heat insulation structure on the gate valve, the melting time is shortened, the melting speed is accelerated, meanwhile, the damage to a quartz crucible is reduced, and the influence on the production of ingots is avoided.

Description

Crystal pulling furnace

Technical Field

The invention relates to the field of polycrystalline silicon, in particular to a crystal pulling furnace.

Background

In producing a silicon single crystal ingot, polycrystalline silicon is filled in a quartz crucible, the polycrystalline silicon is melted, the temperature of the melt is stabilized, and a seed crystal is brought into contact with the melt to grow the single crystal ingot. In the process of melting the polycrystalline silicon, the side surface and the lower part of the chamber have heat insulation pieces, so that the heat loss is less, the upper chamber of the crystal pulling furnace plays a role of a channel for growing ingots, and the melting process carries out the melting of the polycrystalline silicon in a state that the upper part of the chamber is opened, so that the heat loss is generated, the melting time is increased, the production amount is reduced, and the quartz crucible is easy to be damaged to influence the production of the ingots.

Disclosure of Invention

In view of the above, the present invention provides a crystal pulling furnace, which is used to solve the problems that during the process of melting polycrystalline silicon, the polycrystalline silicon is melted in a state that an upper chamber of the crystal pulling furnace is opened, heat loss occurs, melting time is increased, and damage is easily caused to a quartz crucible, which affects the production of ingots.

In order to solve the technical problems, the invention adopts the following technical scheme:

a crystal pulling furnace according to an embodiment of the present invention includes:

the furnace body is internally limited with a cavity, and a crystal pulling port communicated with the cavity is arranged on the furnace body;

the crucible is arranged in the cavity to contain silicon materials;

the heat insulation piece is arranged along the inner wall of the furnace body;

the gate valve is arranged on the furnace body to open or close the crystal pulling port;

the heat insulation structure is arranged on the gate valve to prevent heat from dissipating from the crystal pulling port.

The furnace body is provided with a furnace tube structure, a tube cavity communicated with the crystal pulling opening is limited in the furnace tube structure, and the gate valve is movably arranged on the furnace tube structure to be communicated or sealed with the tube cavity.

Wherein, the lumen is cylindric, the axis of lumen and the axis collineation of crystal pulling mouth.

The furnace tube is structurally limited with a containing cavity communicated with the tube cavity, the gate valve is movable between a first position and a second position, when the gate valve is located at the first position, the gate valve seals the tube cavity, and when the gate valve is located at the second position, the gate valve is located in the containing cavity and is communicated with the tube cavity.

Wherein the lumen is cylindrical and the gate valve is pivotally movable between the first position and the second position about a first axis parallel to the axis of the lumen.

Wherein, the lumen is cylindric, the gate valve can be in between first position with the second position is around the upset of second axis, the second axis with the axis of lumen is perpendicular.

Wherein, the gate valve with insulation construction parallel arrangement, the gate valve with interval between the insulation construction is adjustable.

The crucible furnace is characterized in that a baffle is arranged on the inner wall of the furnace body and positioned above the crucible, and a through hole is formed in the position, corresponding to the crystal pulling opening, of the baffle.

Wherein, still include:

a heating structure disposed in the chamber and between the crucible and the thermal shield.

Wherein, still include:

the support is arranged in the cavity, and the crucible is arranged on the support.

The technical scheme of the invention has the following beneficial effects:

according to the crystal pulling furnace provided by the embodiment of the invention, the furnace body is internally limited with the cavity, and the furnace body is provided with the crystal pulling port communicated with the cavity; the crucible is arranged in the cavity to contain silicon materials; the heat insulation piece is arranged along the inner wall of the furnace body; the gate valve is arranged on the furnace body to open or close the crystal pulling opening; the heat insulation structure is arranged on the gate valve to prevent heat from dissipating from the crystal pulling opening. In the process of melting the polycrystalline silicon, the crystal pulling mouth of the crystal pulling furnace is sealed by the gate valve, so that volatile components in the polycrystalline silicon are prevented from volatilizing, the heat insulation structure on the gate valve can reduce the loss of heat from the crystal pulling mouth, the melting time is reduced, the melting speed is accelerated, meanwhile, the damage to the quartz crucible is reduced, and the influence on the production of ingots is avoided.

Drawings

FIG. 1 is a schematic view of a crystal pulling furnace according to an embodiment of the present invention;

FIG. 2 is another schematic view of the crystal pulling furnace according to the embodiment of the present invention;

FIG. 3 is a schematic view of yet another configuration of a crystal pulling furnace in accordance with an embodiment of the present invention;

FIG. 4 is a schematic view of yet another configuration of a crystal pulling furnace in accordance with an embodiment of the present invention;

FIG. 5 is a schematic structural view of a heat retaining structure of a crystal pulling furnace according to an embodiment of the present invention;

FIG. 6 is a schematic view showing the connection between a gate valve and a heat insulating structure of a crystal pulling furnace according to an embodiment of the present invention.

Reference numerals

A furnace body 10; a chamber 11; a pull opening 12;

a crucible 20;

a heat insulating member 30;

a gate valve 40; an insulation structure 41;

a furnace tube structure 50; a lumen 51; a housing cavity 52;

a baffle 60; a through hole 61;

a heating structure 70; a bracket 71.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.

A crystal pulling furnace according to an embodiment of the present invention is described in detail below.

As shown in fig. 1 to 6, the crystal pulling furnace according to the embodiment of the present invention includes a furnace body 10, a crucible 20, a heat shield 30, a gate valve 40, and a heat insulating structure 41.

Specifically, a chamber 11 is defined in the furnace body 10, a pull opening 12 communicating with the chamber 11 is provided on the furnace body 10, a crucible 20 is provided in the chamber 11 to contain silicon material, a heat insulating member 30 is provided along an inner wall of the furnace body 10, a gate valve 40 is provided on the furnace body 10 to open or close the pull opening 12, and a heat insulating structure 41 is provided on the gate valve 40 to block heat loss from the pull opening 12.

That is, the crystal pulling furnace mainly comprises a furnace body 10, a crucible 20, a heat insulation member 30, a gate valve 40 and a heat insulation structure 41, wherein the furnace body 10 may define a chamber 11 therein, the furnace body 10 may be provided with a crystal pulling opening 12 communicated with the chamber 11, the crystal pulling opening 12 may be located at the top of the chamber 11, the crystal pulling opening 12 may be circular, the crucible 20 may be provided in the chamber 11 to contain silicon material (such as polysilicon), the crucible 20 may be a quartz dry pot, the heat insulation member 30 may be provided along the inner wall of the furnace body 10, and when the silicon material in the crucible 20 is heated and melted, the heat insulation member 30 may reduce heat loss in the furnace body to perform a heat insulation function. A gate valve 40 may be provided on the furnace body 10, the pull gate 12 may be opened or closed by the gate valve 40, and a heat insulating structure 41 may be provided on the gate valve 40 to block heat loss from the pull gate 12. In the process of melting the polycrystalline silicon, the crystal pulling mouth 12 of the crystal pulling furnace can be sealed through the gate valve 40, volatile components in the polycrystalline silicon are prevented from volatilizing, the heat insulation structure 41 on the gate valve 40 can reduce the loss of heat from the crystal pulling mouth, the melting time is reduced, the melting speed is accelerated, meanwhile, the damage to a quartz crucible is reduced, and the influence on the production of ingots is avoided.

In some embodiments of the present invention, a furnace tube structure 50 may be disposed on the furnace body 10, the furnace tube structure 50 may be cylindrical, a tube cavity 51 communicating with the crystal pulling opening 12 may be defined in the furnace tube structure 50, the tube cavity 51 may be cylindrical, the gate valve 40 may be movably disposed on the furnace tube structure 50 to communicate or close the tube cavity 51, the tube cavity 51 is closed by the gate valve 40 during the melting process of the polysilicon to close the crystal pulling opening 12 of the crystal pulling furnace, and the tube cavity 51 is opened by the gate valve 40 during the crystal pulling process to communicate the crystal pulling opening 12 of the crystal pulling furnace, so as to facilitate crystal pulling.

According to some embodiments, the lumen 51 may be cylindrical, and the axis of the lumen 51 and the axis of the pull port 12 may be collinear to facilitate pulling and to facilitate the production of ingots.

According to other embodiments, the furnace tube structure 50 defines a receiving chamber 52 in communication with the tube cavity 51, the gate valve 40 is movable between a first position and a second position, the gate valve 40 can close the tube cavity 51 when the gate valve 40 is located at the first position, the gate valve 40 is located in the receiving chamber 52 and communicates with the tube cavity 51 when the gate valve 40 is located at the second position, and the gate valve 40 is located in the receiving chamber 52 and can avoid affecting the pulling process.

In the embodiment of the present invention, the tube cavity 51 may be cylindrical, and the gate valve 40 may be pivotally movable about a first axis between the first position and the second position, the first axis being parallel to the axis of the tube cavity 51, and by the pivotal movement of the gate valve 40 about the first axis between the first position and the second position, the gate valve 40 may be opened or closed in a horizontal manner in a horizontal plane, so that the gate valve 40 may close or open the tube cavity 51. In the process of melting the polycrystalline silicon, the tube cavity 51 is closed through the gate valve 40 so as to close the crystal pulling port 12 of the crystal pulling furnace, heat can be prevented from being dissipated from the pulling inlet 12, and in the process of pulling, the tube cavity 51 is opened through the gate valve 40 so as to conduct the crystal pulling port 12 of the crystal pulling furnace, so that crystal pulling is facilitated.

In some embodiments of the present invention, the lumen 51 may be cylindrical, and the gate valve 40 may be flipped between the first position and the second position about a second axis, which is perpendicular to the axis of the lumen 51, so that the gate valve 40 may close or open the lumen 51 by flipping, and the gate valve 40 may be opened or closed in a vertical horizontal plane.

In the embodiment of the present invention, as shown in fig. 6, the gate valve 40 and the thermal insulation structure 41 may be respectively in a sheet shape, the gate valve 40 and the thermal insulation structure 41 may be arranged in parallel, the distance between the gate valve 40 and the thermal insulation structure 41 may be adjustable, when the distance between the gate valve 40 and the thermal insulation structure 41 is larger, and when the gate valve 40 closes the pulling port 12, the position of the thermal insulation structure 41 is closer to the pulling port 12, so as to achieve a better thermal insulation effect, and the thermal insulation structure 41 may be arranged below the gate valve 40, so as to reduce the temperature of the gate valve 40, and prevent the operator from being injured due to the overhigh temperature of the gate valve 40.

In some embodiments, the gate valve 40 may be provided with a first connection portion, the insulation structure 41 may be provided with a second connection portion at a position corresponding to the first connection portion, the first connection portion and the second connection portion may be connected, and the distance between the gate valve 40 and the insulation structure 41 may be adjusted by adjusting the relative positions of the first connection portion and the second connection portion. For example, first connecting portion can be the pipe, and second connecting portion can be the cylinder, and the cylinder is movably during stretching into the pipe, is equipped with the screw on the lateral wall of pipe, is equipped with the bolt in the screw, and during rotatory bolt, the bolt can end or keep away from the cylinder, when the interval between needs adjusting gate valve 40 and the insulation construction 41, can rotate the bolt for the cylinder is kept away from to the bolt, can rotate the bolt after the regulation is accomplished, makes the bolt end the cylinder so that cylinder and pipe are fixed stable.

According to the embodiment of the invention, as shown in fig. 1, 3 and 4, a baffle 60 can be arranged on the inner wall of the furnace body 10, the baffle 60 can be positioned above the crucible 20, the baffle 60 has a flow guiding function, the flow of volatile components in the crucible 20 to the crystal pulling opening 12 can be reduced through the baffle 60, a heat insulating layer can be arranged on one side or two side surfaces of the baffle 60, and the baffle 60 has a heat insulating function in addition to the flow guiding function, so that the heat loss in the chamber 11 is reduced. The baffle 60 can be provided with a through hole 61 at a position corresponding to the crystal pulling opening 12, and the axis of the crystal pulling opening 12 and the axis of the through hole 61 can be collinear, so that the crystal bar can grow conveniently during crystal pulling.

Optionally, the crystal pulling furnace may further include a heating structure 70, the heating structure 70 may be disposed in the chamber 11 between the crucible 20 and the thermal shield 30, the polycrystalline silicon material in the crucible 20 may be melted by the heating structure 70, and the dissipation of heat may be reduced by the thermal shield 30.

In an embodiment of the invention, the crystal pulling furnace may further include a support 71, the support 71 may be disposed in the chamber 11, and the crucible 20 may be disposed on the support 71. The support 71 can rotate, and when the heating structure 70 heats and melts the polycrystalline silicon, the polycrystalline silicon in the crucible 20 can be uniformly heated and melted by the rotation of the support 71.

Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.

While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A crystal pulling furnace, comprising:

the crucible is arranged in the cavity to contain silicon materials;

the heat insulation piece is arranged along the inner wall of the furnace body;

the heat insulation structure is arranged on the gate valve to prevent heat from dissipating from the crystal pulling port;

the gate valve with insulation construction parallel arrangement, the gate valve with interval between the insulation construction is adjustable, the gate valve seals when pulling the mouth insulation construction is located the orientation of gate valve one side of crucible.

2. A crystal pulling furnace as claimed in claim 1, wherein the furnace body is provided with a furnace tube structure, the furnace tube structure defines therein a tube cavity communicating with the crystal pulling opening, and the gate valve is movably provided on the furnace tube structure to communicate with or seal the tube cavity.

3. A crystal puller as set forth in claim 2 wherein the tube lumen is cylindrical with an axis collinear with an axis of the puller port.

4. A crystal puller as set forth in claim 2 wherein the furnace tube is structured to define a receiving chamber in communication with the tube chamber, the gate valve being movable between a first position closing the tube chamber when the gate valve is in the first position and a second position in communication with the tube chamber when the gate valve is in the second position.

5. A crystal puller as set forth in claim 4 wherein the tube lumen is cylindrical and the gate valve is pivotally movable between the first and second positions about a first axis parallel to the axis of the tube lumen.

6. A crystal puller as set forth in claim 4 wherein the tube cavity is cylindrical and the gate valve is tiltable about a second axis between the first and second positions, the second axis being perpendicular to the axis of the tube cavity.

7. A crystal pulling furnace as claimed in claim 1, wherein the inner wall of the furnace body is provided with a baffle plate, the baffle plate is positioned above the crucible, and the baffle plate is provided with a through hole at a position corresponding to the crystal pulling port.

8. A crystal puller as set forth in claim 1 further comprising:

9. A crystal puller as set forth in claim 1 further comprising: