CN110548996A - method and device for selecting and etching graphene - Google Patents
method and device for selecting and etching graphene Download PDFInfo
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- CN110548996A CN110548996A CN201810557452.8A CN201810557452A CN110548996A CN 110548996 A CN110548996 A CN 110548996A CN 201810557452 A CN201810557452 A CN 201810557452A CN 110548996 A CN110548996 A CN 110548996A
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- laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Abstract
The invention discloses a method and a device for selecting and etching graphene, which relate to the technical field of semiconductors and comprise the following steps: setting the wavelength, power and scanning path of the laser; the laser is focused through the lens group array to form a laser focusing spot; and scanning a preset region on the surface of the substrate sample by using the laser focusing light spot, completely etching the graphene thin layer in the preset region on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer. The technical problem that the performance of graphene is affected due to the fact that the graphene is inevitably damaged by traditional processing such as gluing, photoetching and etching in the prior art is solved, the graphene film material in a scanning range is completely etched without damaging a substrate material where the graphene is located, and the technical effect of patterning the graphene is achieved.
Description
Technical Field
the invention relates to the technical field of blast furnace ironmaking production, in particular to a method and a device for selectively etching graphene.
Background
Since the discovery of graphene, a monoatomic layer carbon material, which exists stably, by geom et al in 2004, research on two-dimensional thin-film materials represented by graphene has been progressing significantly.
however, in the process of implementing the technical solution in the embodiment of the present application, the inventor of the present application finds that the above prior art has at least the following technical problems:
In the prior art, as the thinnest two-dimensional material, if the material is processed by traditional coating, photoetching, etching and the like, inevitable damage can be caused to the material, and the performance of graphene is affected.
Disclosure of Invention
The embodiment of the invention provides a method and a device for selecting and etching graphene, which are used for solving the technical problem that the performance of the graphene is affected due to inevitable damage to the graphene caused by traditional processing such as gluing, photoetching and etching in the prior art, so that the graphene film material in a scanning range is completely etched without damaging a substrate material where the graphene is located, and the technical effect of patterning the graphene is achieved.
In one aspect, to solve the above problem, an embodiment of the present invention provides a method for selectively etching graphene, where the method includes: setting the wavelength, power and scanning path of the laser; the laser is focused through the lens group array to form a laser focusing spot; scanning a preset area on the surface of a substrate sample by using the laser focusing light spot, completely etching off the graphene thin layer in the preset area on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer.
Preferably, the wavelength of the laser is 150nm to 1500 nm.
preferably, the laser is a pulsed laser, wherein the pulse width of the laser is 10 -8 -10 -15 s.
Preferably, the diameter of the laser focusing spot is 5 μm-6 mm.
Preferably, the number of atomic layers of the graphene thin layer is 1-10.
On the other hand, the embodiment of the present application further provides a device for selectively etching graphene by using laser, where the device includes: a laser light source that emits a single pulse laser; the system comprises a computer data acquisition, processing and control system, a laser light source and a control system, wherein the computer data acquisition, processing and control system is connected with the laser light source and is used for setting the wavelength, the power and the scanning path parameters of the laser light source; the lens group array receives the single pulse laser emitted by the laser light source and focuses the single pulse laser; the optical window flange assembly receives the focused single-pulse laser and scans a graphene thin layer in a preset area on the surface of the substrate sample; the device comprises a laser scanning cavity, wherein a slide glass platform for placing a substrate sample is arranged in the laser scanning cavity; wherein the optical window flange assembly is disposed on the laser scanning cavity.
Preferably, the apparatus further comprises: and the sample feeding channel is arranged in the laser scanning cavity.
Preferably, the optical window flange component is a flange component in a specific wavelength range of 100nm-1500 nm.
preferably, the apparatus further comprises: and the power device is arranged on the laser scanning cavity.
preferably, the apparatus further comprises: the vacuum gauge assembly is arranged on the laser scanning cavity and used for vacuumizing the laser scanning cavity according to a preset vacuum condition.
One or more technical solutions in the embodiments of the present invention at least have one or more of the following technical effects:
The embodiment of the invention provides a method for selecting and etching graphene, which comprises the steps of setting the wavelength, the power and the scanning path of laser; the laser is focused through the lens group array to form a laser focusing spot; and scanning a preset region on the surface of the substrate sample by using the laser focusing light spot, completely etching the graphene thin layer in the preset region on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer. The technical problem that the performance of graphene is affected due to the fact that the graphene is inevitably damaged by traditional processing such as gluing, photoetching and etching in the prior art is solved, the graphene film material in a scanning range is completely etched without damaging a substrate material where the graphene is located, and the technical effect of patterning the graphene is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a flowchart of a method for selectively etching graphene according to an embodiment of the present invention;
Fig. 2 is a structural diagram of a graphene selective etching apparatus in an embodiment of the present invention.
Reference numerals: the device comprises a laser light source 6, a lens group array 7, an optical window flange component 3, a laser scanning cavity 1, a slide glass platform 2, a substrate sample 4, a sample introduction channel 5, a computer data acquisition, processing and control system 8, a vacuum gauge component 9 and a main cavity pump set 10.
Detailed Description
The embodiment of the invention provides a method for selecting and etching graphene, and solves the technical problem that the performances of graphene are influenced because inevitable damage is caused to the graphene in the traditional processing of gluing, photoetching, etching and the like in the prior art
The technical scheme in the embodiment of the invention has the following general scheme: setting the wavelength, power and scanning path of the laser; the laser is focused through the lens group array to form a laser focusing spot; and scanning a preset region on the surface of the substrate sample by using the laser focusing light spot, completely etching the graphene thin layer in the preset region on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer. The method has the advantages that the graphene film material in the scanning range is completely etched, the substrate material where the graphene is located is not damaged, and the technical effect of patterning the graphene is achieved.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
the embodiment of the invention provides a method for selecting and etching graphene, and please refer to fig. 1, wherein the method comprises the following steps:
and 110, setting the wavelength, the power and the scanning path of the laser, wherein the wavelength of the laser is from 150nm to 1500nm, the laser is pulse laser, and the pulse width of the laser is 10 -8 -10 -15 s.
specifically, before the graphene is etched, a laser used for etching is preprocessed, namely, the wavelength, power and scanning path of the laser are set, the wavelength of the laser is set between 150nm of extreme ultraviolet and 1500nm of near infrared, the laser is a pulse laser, pulses are mechanical forms such as waves (electric waves/optical waves and the like) emitted at intervals, the pulse laser refers to a light pulse emitted by a laser in a pulse working mode, the pulse width of the laser generally refers to the duration of the laser power when the laser power is maintained at a certain value, the pulse width of different lasers can be changed within a wide range, and the pulse width of the laser in the embodiment of the invention is 10 -8 -10 -15 s
step 120: the laser is focused through the lens group array to form a laser focusing spot; the diameter of the laser focusing spot is 5-6 mm.
In particular, the focal diameter of the laser spot is a very important parameter reflecting the design performance of the laser, and determines the power density and the processing range of the laser. In the embodiment of the application, the laser is focused through the lens group array to form a laser spot with the diameter of 5-6 mm, so that the laser spot is more suitable for etching the surface of graphene, and the technical effect that the graphene film material in a scanning range is completely etched without damaging the substrate material where the graphene is located is achieved.
Step 130: scanning a preset region on the surface of the substrate sample by using the laser focusing light spot, completely etching off the graphene thin layer in the preset region on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer; wherein the number of atomic layers of the graphene thin layer is 1-10.
Specifically, the substrate sample is a sample to be etched, the preset region on the surface of the substrate sample is a region of the substrate sample needing a pattern to be etched, and the graphene thin layer in the preset region on the surface of the substrate sample is completely etched, so that the pattern is formed on the surface of the graphene thin layer.
Example two
The invention also provides a device for selectively etching graphene by using laser, as shown in fig. 2, the device comprises:
A laser light source 6, wherein the laser light source 6 emits single-pulse laser;
Specifically, the laser light source 6 is located at the start end of the whole device, the laser light source 6 is emitted by a laser, and the laser light source 6 emitted by the laser is a single-pulse laser, that is, the laser is a single-pulse laser, the single-pulse laser is a pulse laser with relatively long and irregular laser pulse output intervals, and the laser output by the single-pulse laser is a single-pulse laser.
Further, a computer data acquisition, processing and control system 8, wherein the computer data acquisition, processing and control system 8 is connected with the laser light source 6 and is used for setting the wavelength, the power and the scanning path parameters of the laser light source 6.
The lens group array 7 receives the single pulse laser emitted by the laser light source 6, and focuses the single pulse laser;
Specifically, the mirror group array 7 focuses the laser light source 6 incident to the mirror group array 7 by the concave-convex, thickness and combination of the lenses, and forms a laser spot having a diameter of 5 μm to 6mm when the laser light source 6 emits.
The optical window flange component 3 receives the focused single pulse laser and scans a graphene thin layer in a preset area on the surface of the substrate sample 4; the optical window flange component 3 is a flange component within a specific wavelength range of 100nm-1500 nm.
Specifically, the laser spot penetrates through the optical window flange assembly 3 and enters a graphene thin layer of a preset area on the surface of the substrate sample 4, and the graphene thin layer is etched. The optical window flange component 3 is used for scanning the substrate sample 4 through laser spots with the wavelength of 100nm-1500 nm.
The device comprises a laser scanning cavity 1, wherein a slide glass platform 2 for placing a substrate sample 4 is arranged in the laser scanning cavity 1; the optical window flange assembly 3 is arranged on the laser scanning cavity 1; further, the apparatus further comprises: and the sample feeding channel 5 is arranged in the laser scanning cavity 1.
Specifically, the laser scanning cavity 1 is equivalent to a carrier, and a substrate platform 2 for placing a substrate sample 4 is arranged in the laser scanning cavity 1; an optical window flange component 3 and a sample introduction channel 5 for placing a substrate sample 4 are arranged on the laser scanning cavity 1.
The device further comprises: the vacuum gauge assembly 9 is arranged on the laser scanning cavity 1, and is used for vacuumizing the laser scanning cavity 1 according to a preset vacuum condition;
The device further comprises: the main cavity pump unit 10 is arranged on the laser scanning cavity 1, and the main cavity pump unit 10 is used for providing power for the modules arranged on the laser scanning cavity 1.
in an atmospheric environment, the preset area is scanned by the energy of laser, so that graphene in the preset area is instantaneously oxidized and ablated, the effect of etching away the graphene is achieved, and the graphene is patterned.
In a vacuum environment, the preset area is scanned by the energy of laser, so that graphene in the preset area is instantly evaporated, the effect of etching away the graphene is achieved, and the graphene is used for patterning.
The technical scheme provided in the embodiment of the application at least has the following technical effects or advantages:
The embodiment of the invention provides a method for selecting and etching graphene, which comprises the steps of setting the wavelength, the power and the scanning path of laser; the laser is focused through the lens group array to form a laser focusing spot; and scanning a preset region on the surface of the substrate sample by using the laser focusing light spot, completely etching the graphene thin layer in the preset region on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer. The technical problem that the performance of graphene is affected due to the fact that the graphene is inevitably damaged by traditional processing such as gluing, photoetching and etching in the prior art is solved, the graphene film material in a scanning range is completely etched without damaging a substrate material where the graphene is located, and the technical effect of patterning the graphene is achieved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.
Claims (10)
1. A method for selecting and etching graphene is characterized by comprising the following steps:
Setting the wavelength, power and scanning path of the laser;
The laser is focused through the lens group array to form a laser focusing spot;
Scanning a preset area on the surface of a substrate sample by using the laser focusing light spot, completely etching off the graphene thin layer in the preset area on the surface of the substrate sample, and forming a pattern on the surface of the graphene thin layer.
2. The method of claim 1, wherein the laser has a wavelength of from euv 150nm to nir 1500 nm.
3. the method of claim 1, wherein the laser is a pulsed laser, wherein the laser has a pulse width of 10 -8 -10 -15 s.
4. the method of claim 1, wherein the laser focused spot diameter is between 5 μm and 6 mm.
5. The method of claim 1, wherein the number of atomic layers of the graphene thin layer is 1-10.
6. A device for selectively etching graphene by laser is characterized by comprising:
A laser light source that emits a single pulse laser;
The system comprises a computer data acquisition, processing and control system, a laser light source and a control system, wherein the computer data acquisition, processing and control system is connected with the laser light source and is used for setting the wavelength, the power and the scanning path parameters of the laser light source;
The lens group array receives the single pulse laser emitted by the laser light source and focuses the single pulse laser;
the optical window flange assembly receives the focused single-pulse laser and scans a graphene thin layer in a preset area on the surface of the substrate sample;
The device comprises a laser scanning cavity, wherein a slide glass platform for placing a substrate sample is arranged in the laser scanning cavity;
wherein the optical window flange assembly is disposed on the laser scanning cavity.
7. the apparatus of claim 6, wherein the apparatus further comprises:
and the sample feeding channel is arranged in the laser scanning cavity.
8. The apparatus of claim 6, wherein the optical window flange assembly is a flange assembly in a specific wavelength range of 100nm to 1500 nm.
9. The apparatus of claim 6, wherein the apparatus further comprises:
and the power device is arranged on the laser scanning cavity.
10. The apparatus of claim 6, wherein the apparatus further comprises:
The vacuum gauge assembly is arranged on the laser scanning cavity and used for vacuumizing the laser scanning cavity according to a preset vacuum condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810557452.8A CN110548996A (en) | 2018-06-01 | 2018-06-01 | method and device for selecting and etching graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810557452.8A CN110548996A (en) | 2018-06-01 | 2018-06-01 | method and device for selecting and etching graphene |
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| Publication Number | Publication Date |
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| CN110548996A true CN110548996A (en) | 2019-12-10 |
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| CN201810557452.8A Pending CN110548996A (en) | 2018-06-01 | 2018-06-01 | method and device for selecting and etching graphene |
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| CN106531613A (en) * | 2016-04-22 | 2017-03-22 | 中国科学院微电子研究所 | Modifying and processing method and device for selected area on graphene surface |
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2018
- 2018-06-01 CN CN201810557452.8A patent/CN110548996A/en active Pending
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| JP2010120819A (en) * | 2008-11-20 | 2010-06-03 | Nec Corp | Semiconductor device having carbon film and method for manufacturing the same |
| CN102501701A (en) * | 2011-11-23 | 2012-06-20 | 深圳力合光电传感技术有限公司 | Method for forming grapheme patterns by using laser etching |
| CN104264130A (en) * | 2014-09-25 | 2015-01-07 | 北矿磁材科技股份有限公司 | Preparation method and preparation device of graphene |
| CN106531613A (en) * | 2016-04-22 | 2017-03-22 | 中国科学院微电子研究所 | Modifying and processing method and device for selected area on graphene surface |
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