CN110545081A - Ultra-wideband high-power radio frequency amplifier synthesis matching method - Google Patents
Ultra-wideband high-power radio frequency amplifier synthesis matching method Download PDFInfo
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- CN110545081A CN110545081A CN201910847081.1A CN201910847081A CN110545081A CN 110545081 A CN110545081 A CN 110545081A CN 201910847081 A CN201910847081 A CN 201910847081A CN 110545081 A CN110545081 A CN 110545081A
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- microstrip
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- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 14
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000005315 distribution function Methods 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/486—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with IC amplifier blocks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
Abstract
A synthesis matching method of an ultra-wideband high-power radio frequency amplifier belongs to the technical field of semiconductor radio frequency circuits. The method comprises the following specific steps: a microstrip T-shaped section Tee1 and a microstrip line TL1/TL2 are used for increasing the input real part impedance at the input end of the power tube to be 4-5 times of the input real part impedance of the original power tube, and the partial impedance matching function is realized; converting output real part impedance at the output end of the power tube to be 3-4 times of the output real part impedance of the original power tube by using a microstrip T-shaped section Tee2 and a microstrip line TL5/TL6, and realizing a partial impedance matching function; the input end uses 2 sections of microstrip lines to match the T-shaped section Tee1 junction of the microstrip to 50 omega; the output end uses 5 sections of microstrip lines to match the T-shaped section Tee2 junction point of the microstrip to 50 omega. The method has the advantages that compared with the traditional circuit topology structure, the production cost is reduced by 40%; compared with the traditional circuit amplifier, the working efficiency of the amplifier of the circuit is 20.2 percent higher, and the energy efficiency conversion rate is greatly improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor radio frequency circuits, and particularly relates to a synthesis matching method of an ultra-wideband high-power radio frequency amplifier. In particular to a (0.5-3) GHz continuous wave 100W GaN power amplifier.
Background
In many broadband communication, radar or test systems, the transmitter needs to be able to amplify a very wide frequency signal. For example, the transmitter can work in UHF TV transmission of (470-860) MHz, (825-915) MHz 2G communication, (1920-2025) MHz 3G communication, (1880-2655) MHz 4G communication, (2515-2675) MHz 5G communication, broadband electronic warfare and other applications at the same time. The power amplifier as an important part of the transmitter has a very important significance in the research on design technology of making the power amplifier smaller, lower in cost and more efficient.
The operating bandwidth is limited by the parasitic parameters of the core power transistor itself in a wideband power amplifier, and low impedance and thermal limitations result in low operating efficiency. The wide bandgap gallium nitride (GaN) semiconductor power device has the characteristics of wide bandgap, high electron drift velocity, high voltage resistance, high temperature resistance, radiation resistance and the like, the electron saturation drift velocity of GaN is 2.5 multiplied by 107cm/s, which is 2 times of that of Si, and the junction capacitance is smaller, so that the wide bandgap gallium nitride (GaN) semiconductor power device is more suitable for high-frequency broadband high-power application than Si LDMOS and GaAs. Meanwhile, in order to obtain enough power to ensure a communication distance or an interference effect, a plurality of power tubes are required to be power-combined by a power combiner in the conventional design, and the conventional design has the disadvantages of large circuit size, high production cost and low working efficiency.
Description of the content
The invention mainly provides a synthesis matching method of an ultra-wideband high-power radio frequency amplifier, which solves the problem that the circuit size is large because a plurality of power tubes are required to be utilized by a power synthesizer in power synthesis.
A synthesis matching method of an ultra-wideband high-power radio frequency amplifier comprises the following specific steps and parameters:
1. A microstrip T-shaped section Tee1 and a microstrip line TL1/TL2 are used for increasing the input real part impedance at the input end of the power tube to be 4-5 times of the input real part impedance of the original power tube, conjugate offsetting of the imaginary part impedance is achieved, a partial impedance matching function is achieved, and a partial matching circuit is replaced. Meanwhile, the microstrip T-shaped section Tee1, the microstrip line TL1 and the microstrip line TL2 equally divide input power to the input ends of the two power tubes in the same phase, so that the power distribution function is realized, and the traditional power distribution by using a power distributor is replaced.
2. A microstrip T-shaped section Tee2 and a microstrip line TL5/TL6 are used for converting output real part impedance at the output end of the power tube to be 3-4 times of the output real part impedance of the original power tube, imaginary part impedance is offset in a conjugate mode, a partial impedance matching function is achieved, and a partial matching circuit is replaced. Meanwhile, the microstrip T-shaped section Tee2, the microstrip line TL5 and the microstrip line TL6 synthesize the output power of the two power tubes in phase and match the output power, and the traditional power synthesizer is replaced for power synthesis.
3. the input end uses 2 sections of microstrip lines MLIN TL3 and TL4 to match the junction of the microstrip T-shaped section Tee1 to 50 omega before the microstrip T-shaped section Tee 1. The output end uses 5 sections of microstrip lines MLIN TL7, TL8, TL9, TL10 and TL11 to match the junction of the T-shaped section Tee2 of the microstrip to 50 omega.
compared with the traditional circuit topology structure, the broadband power divider HYB1 and the synthesizer HYB2 are not used, the circuit size is reduced from (158 × 54) mm to (121 × 43) mm, and the production cost is reduced by 40%. When the actual measurement result is 100W at (0.5-3) GHz output power, the working efficiency of the amplifier using the novel circuit is 20.2% higher than that of the amplifier using the traditional circuit, and the energy efficiency conversion rate is greatly improved.
Drawings
FIG. 1 is a schematic diagram of a composite matching circuit of the present invention.
Fig. 2 is a schematic diagram of a conventional composite matching circuit.
FIG. 3 is a diagram of a composite matching circuit according to the present invention. The figure has marked 2 microstrip T-shaped sections MTEE (Tee1, Tee2) and one microstrip line MLIN (TL1, TL2, TL5, TL6), and A1 and A2 are 2 GaN power tubes with the same performance.
fig. 4 is a diagram of a conventional composite matching circuit.
Detailed Description
A synthesis matching method of an ultra-wideband high-power radio frequency amplifier is characterized in that a section of microstrip line MLIN is respectively utilized at input and output pin ends of a power tube, the real part of input impedance of the power tube is matched to 5 omega from 1 omega, the impedance transformation ratio is 1:5, and the imaginary part is conjugate and offset as much as possible, so that a low reactance value is realized. The real part of the output impedance is matched to 9 omega from 3, the impedance transformation ratio is 1:3, and the imaginary part is also offset in a conjugate mode as much as possible to achieve a low reactance value. Then, two paths of same-phase equal impedance are synthesized through a microstrip T-shaped section MTEE, 2 sections of microstrip lines MLIN are used for subsequent input, 5 sections of microstrip lines MLIN are used for output, and finally the input and the output of the power tube are matched to 50 omega, as shown in figure 1.
The novel synthesis matching uses 2 microstrip T-shaped sections MTEE to replace a power divider HYB1 and a synthesizer HYB2 in the traditional scheme to complete power distribution and synthesis functions, and the microstrip T-shaped sections MTEE only synthesizes two same impedances of input and output in phase without considering the phase of 90 degrees of a broadband, so that the realization form is simpler. The impedance and phase of the microstrip T-shaped section MTEE and the microstrip line MLIN are further optimized, so that the input impedance and the output impedance of the power tube are optimally matched in the whole working frequency band, and finally, a circuit form realized by applying a (0.5-3) GHz continuous wave 100W GaN power amplifier designed by novel synthesis matching on an RO4350 type PCB dielectric plate with the thickness of 0.508mm is shown in figure 3.
Claims (1)
1. A synthesis matching method of an ultra-wideband high-power radio frequency amplifier comprises the following specific steps and parameters:
1) A microstrip T-shaped section Tee1 and a microstrip line TL1/TL2 are used for increasing the input real part impedance at the input end of the power tube to be 4-5 times of the input real part impedance of the original power tube, conjugate offsetting the imaginary part impedance, and realizing the function of partial impedance matching; meanwhile, the microstrip T-shaped section Tee1, the microstrip line TL1 and the microstrip line TL2 equally divide input power to the input ends of the two power tubes in the same phase, so that the power distribution function is realized, and the traditional power distribution by using a power distributor is replaced;
2) Converting output real part impedance to 3-4 times of the output real part impedance of the original power tube at the output end of the power tube by using a microstrip T-shaped section Tee2 and a microstrip line TL5/TL6, and offsetting imaginary part impedance in a conjugate manner to realize a partial impedance matching function; meanwhile, the microstrip T-shaped section Tee2, the microstrip line TL5 and the microstrip line TL6 are used for synthesizing the output power of the two power tubes in phase and outputting in a matching manner, so that the traditional power synthesizer is replaced for power synthesis;
3) The input end is in front of the microstrip T-shaped section Tee1, and the combination point of the microstrip T-shaped section Tee1 is matched to 50 omega by using 2 sections of microstrip lines MLIN TL3 and TL 4; the output end uses 5 sections of microstrip lines MLIN TL7, TL8, TL9, TL10 and TL11 to match the junction of the T-shaped section Tee2 of the microstrip to 50 omega.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910847081.1A CN110545081A (en) | 2019-09-06 | 2019-09-06 | Ultra-wideband high-power radio frequency amplifier synthesis matching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910847081.1A CN110545081A (en) | 2019-09-06 | 2019-09-06 | Ultra-wideband high-power radio frequency amplifier synthesis matching method |
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| CN110545081A true CN110545081A (en) | 2019-12-06 |
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| CN201910847081.1A Pending CN110545081A (en) | 2019-09-06 | 2019-09-06 | Ultra-wideband high-power radio frequency amplifier synthesis matching method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204289676U (en) * | 2014-12-23 | 2015-04-22 | 天津光电通信技术有限公司 | A kind of high power two-way merit based on microstrip line is divided, synthesizer |
| WO2015117496A1 (en) * | 2014-08-25 | 2015-08-13 | 中兴通讯股份有限公司 | Power amplifier circuit and power amplifier |
| CN208063141U (en) * | 2018-04-25 | 2018-11-06 | 合肥芯谷微电子有限公司 | S-band power amplifiers |
| CN109873612A (en) * | 2019-01-22 | 2019-06-11 | 北京邮电大学 | A kind of double frequency-band high efficiency power amplifier based on multi-ladder stub matching network |
-
2019
- 2019-09-06 CN CN201910847081.1A patent/CN110545081A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015117496A1 (en) * | 2014-08-25 | 2015-08-13 | 中兴通讯股份有限公司 | Power amplifier circuit and power amplifier |
| CN204289676U (en) * | 2014-12-23 | 2015-04-22 | 天津光电通信技术有限公司 | A kind of high power two-way merit based on microstrip line is divided, synthesizer |
| CN208063141U (en) * | 2018-04-25 | 2018-11-06 | 合肥芯谷微电子有限公司 | S-band power amplifiers |
| CN109873612A (en) * | 2019-01-22 | 2019-06-11 | 北京邮电大学 | A kind of double frequency-band high efficiency power amplifier based on multi-ladder stub matching network |
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Application publication date: 20191206 |