CN110544874A - Silicon-based tunable laser based on staggered grating and implementation method - Google Patents
Silicon-based tunable laser based on staggered grating and implementation method Download PDFInfo
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- CN110544874A CN110544874A CN201910971616.6A CN201910971616A CN110544874A CN 110544874 A CN110544874 A CN 110544874A CN 201910971616 A CN201910971616 A CN 201910971616A CN 110544874 A CN110544874 A CN 110544874A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Abstract
The invention provides a silicon-based tunable laser based on staggered gratings and an implementation method thereof. The staggered grating is adopted to convert the fundamental mode in the silicon waveguide into a high-order mode, so that the effective refractive index of the mode is reduced, the size of the sampling grating filter is increased, the manufacturing difficulty of the tunable laser is reduced, and the problem of high processing difficulty of the grating of the conventional silicon-based tunable laser is solved. The scheme can be used for a tunable laser with an external cavity structure and a tunable laser with a bonding mode. The common phase region and the branch phase region act together to make the mode of the laser more stable. Because the two sampling gratings are arranged on the same side of the gain chip, compared with a tunable laser with the sampling gratings arranged on the different sides of the gain chip, the tunable laser can obtain a better side mode suppression ratio.
Description
Technical Field
the invention relates to the technical field of photoelectrons, in particular to a silicon-based tunable laser based on staggered gratings and an implementation method thereof.
Background
The silicon-based photonic integrated chip has the advantages of small size, high bandwidth, low power consumption, no electromagnetic compatibility and the like, and is the most effective scheme for realizing optical interconnection between a data center and a super computer chip. According to the forecast of the market analysis company, Yoledevelopment, the future silicon-based photonic integration technology will be developed in a blowout manner, and the market scale will reach billions of dollars by 2025.
Since silicon is an indirect bandgap semiconductor and cannot emit light by itself, most of the current integrated light sources are realized by a hybrid integration mode. Tunable lasers are a difficulty in a variety of integrated optical source devices, and typically include a gain section, a phase adjustment section, and appropriate filters. The hybrid integrated tunable laser is mainly divided into two types, one is that III-V group gain materials are integrated with a silicon-based chip in a bonding mode, and then subsequent processes such as waveguide etching of a gain region, electrode growth and the like are carried out, such as the technologies of molecular force bonding, BCB bonding, metal bonding and the like; and secondly, the manufactured gain chip and the filter on the silicon-based waveguide are coupled and packaged in an external cavity mode. Either approach involves the design and fabrication of filters on Silicon (SOI) on insulating substrates.
The filter commonly adopted by the silicon-based hybrid integrated tunable laser comprises a micro-ring resonant cavity and a sampling grating, wherein the micro-ring resonant cavity has poor process stability, the wavelength is difficult to control accurately, and the common sampling grating has the problems of small size and large processing difficulty. The first-order Bragg waveguide grating period of the single transverse mode silicon waveguide in the communication waveband is less than 300nm, the line width is less than 150nm, and the current silicon-based photoelectron CMOS process is difficult to meet the requirement of the processing precision of the grating, so that the mass production and large-scale application of the silicon-based tunable laser are limited.
Disclosure of Invention
In view of the problems in the prior art, an object of the present invention is to provide a silicon-based tunable laser based on staggered gratings and an implementation method thereof, in which the size of a sampled grating filter is increased by a method of mode conversion through the staggered gratings, and a fundamental mode in a silicon waveguide is converted into a high-order mode by the staggered gratings, so that an effective refractive index of the mode is reduced. According to the Bragg formula lambda being 2neff lambda, when the effective refractive index of the waveguide mode is reduced, the period of the grating filter is increased, so that the manufacturing difficulty of the tunable laser is reduced, and the problem that the grating processing difficulty of the existing silicon-based tunable laser is high is solved.
The invention provides a silicon-based tunable laser based on staggered gratings, which comprises a gain chip, a first multimode interference coupler, a first grating coupler, a second grating coupler, a common phase region, a second multimode interference coupler, a branch phase region, a first mode conversion region, a second mode conversion region, a first sampling grating, a second sampling grating, a first detector and a second detector, wherein the gain chip is connected with the first multimode interference coupler, the first multimode interference coupler is connected with the second grating coupler, the first grating coupler and the common phase region are respectively connected with the first multimode interference coupler, the second multimode interference coupler is connected with the common phase region, the branch phase region is connected with the second multimode interference coupler, the first mode conversion region is connected with the branch phase region, and the first sampling grating is connected with the first mode conversion region, the first detector is connected with the first sampling grating, the second mode conversion area is connected with the second multimode interference coupler, the second sampling grating is connected with the second mode conversion area, the second detector is connected with the second sampling grating, the first mode conversion area and the second mode conversion area are formed by staggered gratings, and an input low-order waveguide mode is converted into a high-order mode.
The further improvement lies in that: the staggered grating is composed of two sections of reflective gratings Gmj and Gim, wherein Gmj achieves reflection transformation from an m mode to a j mode, Gim achieves reflection transformation from an i mode to the m mode, m is an intermediate mode, and the two sections of gratings are overlapped to achieve forward transmission transformation from the i mode to the j mode.
The further improvement lies in that: the propagation constants of the interleaved gratings satisfy β 1 ═ β 2+ Kmj-Kim, where β 2 and β 1 are the propagation constants of the i-mode and j-mode, respectively, and Kmj and Kim are the grating vectors of Gmj and Gim, respectively.
The further improvement lies in that: the interleaved grating structure is apodized in either the transverse or longitudinal direction of the waveguide.
The further improvement lies in that: the mode of the first sampling grating and the mode of the second sampling grating are high-order waveguide modes, the effective refractive index is smaller than lambda/4 d, the grating period is larger than 2d, wherein d is the minimum processing precision, and lambda is the working wavelength of the silicon-based tunable laser.
the further improvement lies in that: the first sampling grating and the second sampling grating are superstructure sampling gratings, and the grating period is linearly changed in a sampling large period.
The tunable laser comprises a gain chip, a first multimode interference coupler, a first grating coupler, a second grating coupler, a common phase region, a second multimode interference coupler, a branch phase region, a first mode transformation region, a second mode transformation region, a first sampling grating, a second sampling grating, a first detector and a second detector.
in the tunable laser, the first mode conversion region and the second mode conversion region are the same or different staggered gratings, each staggered grating is composed of two sections of relatively independent reflective gratings Gmj and Gim, wherein Gmj realizes reflective conversion from an m mode to a j mode, Gim realizes reflective conversion from an i mode to an m mode, m is an intermediate mode, the two sections of gratings are superposed to realize forward transmission conversion from the i mode to the j mode, and the function is to convert a fundamental mode output from the second multimode interference coupler into a high-order mode with a smaller refractive index.
In the tunable laser, the propagation constants of the interleaved gratings of the first and second mode conversion regions satisfy β 1 ═ β 2+ Kmj-Kim, where β 2 and β 1 are the propagation constants of i-mode and j-mode, respectively, and Kmj and Kim are the grating vectors of Gmj and Gim, respectively.
In the tunable laser, the staggered grating structures of the first and second mode conversion regions are apodized in the transverse direction or the longitudinal direction of the waveguide, so that the mutual crosstalk between two sections of gratings can be reduced. In the tunable laser, the gain chip is a broadband InGaAsP reflective semiconductor optical amplifier, an output waveguide at one end coupled with the SOI chip is inclined and is plated with an antireflection film to reduce reflection, a high-reflection film is plated at the other end, and a laser resonant cavity is formed between the high-reflection film and the first sampling grating and between the high-reflection film and the second sampling grating.
in the tunable laser, the first multimode interference coupler divides the light output by the gain chip into two parts, wherein one part enters the first grating coupler for monitoring the coupling process and efficiency, and the other part enters the common phase region.
In the tunable laser, the light output from the common phase region is divided into two parts by the second multimode interference coupler, and each arm has a corresponding mode conversion region, a sampling grating and a detector. The sampled grating reflection spectra on the two arms have different free spectral ranges, and the overlapping peaks of the two free spectral ranges are the lasing wavelengths of the tunable laser. The first detector and the second detector are used for monitoring and feeding back the performance of the tunable laser.
in the tunable laser, the effective refractive index of the first sampling grating and the effective refractive index of the second sampling grating are less than lambda/4 d, the grating period is greater than 2d, wherein d is the minimum processing precision of a CMOS (complementary metal oxide semiconductor) process, and lambda is the central wavelength of the tunable laser.
In the tunable laser, the first and second sampling gratings are superstructure sampling gratings, and the grating period varies linearly within a large sampling period.
In the tunable laser, the second grating coupler is an output port of the laser.
in the tunable laser, the branch phase region adjusts relative phases of the two arms, and the common phase region adjusts an overall phase of the tunable laser.
The invention also provides a method for realizing the silicon-based tunable laser based on the staggered grating, which is characterized by comprising the following steps: the implementation method comprises the following steps:
The method comprises the following steps: preparing an InGaAsP-based reflective gain chip and an SOI chip;
Step two: coupling the gain chip and the SOI chip through a spot-size converter;
Step three: dividing the light coupled and input into the SOI chip by the gain chip into two paths through a first multimode interference coupler and a second multimode interference coupler;
step four: converting the fundamental mode into a high-order mode through the first mode conversion region and the second mode conversion region;
Step five: a laser resonant cavity is formed between the high-reflection end face of the gain chip and the first sampling grating and between the high-reflection end face of the gain chip and the second sampling grating;
step six: the relative phase difference of the two arms of the laser and the overall phase are adjusted through the branch phase area and the common phase area;
Step seven: and monitoring and feedback are carried out through the first grating coupler and the second grating coupler and the first detector and the second detector.
the invention has the beneficial effects that: the staggered grating is used as a mode conversion area, and a waveguide fundamental mode of the gain chip coupled into the SOI chip is converted into a high-order mode, so that the sizes of the first sampling grating and the second sampling grating are larger than the minimum processing precision allowed by a CMOS (complementary metal oxide semiconductor) process, and the manufacturing difficulty of the tunable laser is reduced. The scheme can be used for a tunable laser with an external cavity structure and a tunable laser with a bonding mode. The common phase region and the branch phase region act together to make the mode of the laser more stable. Because the two sampling gratings are arranged on the same side of the gain chip, compared with a tunable laser with the sampling gratings arranged on the different sides of the gain chip, the tunable laser can obtain a better side mode suppression ratio.
Drawings
Fig. 1 is a schematic structural composition diagram of a silicon-based external cavity tunable laser of the present invention.
FIG. 2 is a schematic diagram of the present invention of an interleaved grating implementing mode conversion.
FIG. 3 is a schematic diagram of the apodization of an interleaved grating according to the present invention.
Fig. 4 is a schematic diagram of a superstructure grating employed by the first sampled grating and the second sampled grating of the present invention.
fig. 5 shows the reflection spectrum of the superstructure grating used in the first and second sampled gratings of the present invention.
Fig. 6 is a flow chart of an implementation method of the present invention.
Wherein: 1-gain chip, 2-first multimode interference coupler, 3-first grating coupler, 4-second grating coupler, 5-common phase region, 6-second multimode interference coupler, 7-branch phase region, 8-first mode transformation region, 9-second mode transformation region, 10-first sampling grating, 11-second sampling grating, 12-first detector, 13-second detector.
Detailed Description
For the purpose of enhancing understanding of the present invention, the present invention will be further described in detail with reference to the following examples, which are provided for illustration only and are not to be construed as limiting the scope of the present invention. As shown in fig. 1-6, this embodiment provides a silicon-based tunable laser based on staggered gratings, which includes a gain chip 1, a first multimode interference coupler 2, a first grating coupler 3, a second grating coupler 4, a common phase region 5, a second multimode interference coupler 6, a branch phase region 7, a first mode transformation region 8, a second mode transformation region 9, a first sampling grating 10, a second sampling grating 11, a first detector 12, and a second detector 13, where the gain chip 1 is connected to the first multimode interference coupler 2, the first multimode interference coupler 2 is connected to the second grating coupler 4, the first grating coupler 3 and the common phase region 5 are respectively connected to the first multimode interference coupler 2, the second multimode interference coupler 6 is connected to the common phase region 5, the branch phase region 7 is connected to the second multimode interference coupler 6, the first mode conversion area 8 is connected with the branch phase area 7, the first sampling grating 10 is connected with the first mode conversion area 8, the first detector 12 is connected with the first sampling grating 10, the second mode conversion area 9 is connected with the second multimode interference coupler 6, the second sampling grating 11 is connected with the second mode conversion area 9, the second detector 13 is connected with the second sampling grating 11, the first mode conversion area 8 and the second mode conversion area 9 are formed by staggered gratings, and input low-order waveguide modes are converted into high-order modes. The gain chip 1 is an InGaAsP reflective semiconductor optical amplifier with a gain bandwidth of 80nm, a waveguide at one end coupled with the SOI chip has an inclination angle of 8 degrees, an antireflection film is plated on the end face, the reflectivity is less than 1%, a high-reflection film is plated on the end face at the other end, the reflectivity is more than 99%, and a resonant cavity of a laser is formed between the high-reflection film and two sampling gratings.
The coupling ratio of the first multimode interference coupler 2 and the second multimode interference coupler 6 is 1:1, and the variation of the coupling ratio is small in the gain bandwidth range of the gain chip 1.
The first grating coupler 3 is used for monitoring power loss in a coupling process, and the grating coupler 4 is a light-emitting end of the tunable laser.
The common phase area 5 and the branch phase area 7 are pn junctions manufactured on the silicon waveguide, the common phase area 5 adjusts the overall phase of the laser, and the branch phase area 7 adjusts the relative phase between resonant cavities respectively formed by two sampling gratings of the laser.
the first mode conversion region 8 and the second mode conversion region 9 are the same or different staggered gratings, and convert the optical waveguide mode from the direction of the gain chip 1 into a fundamental mode and a high-order mode. Each of the interleaved gratings is composed of two independent reflective gratings Gmj and Gim, which can realize the forward transmission conversion from i-mode to j-mode.
the propagation constants of the interleaved gratings of the first mode transformation region 8 and the second mode transformation region 9 satisfy β 1 ═ β 2+ Kmj-Kim, where β l and β l are the propagation constants of i-mode and j-mode, respectively, and Kmj and Kim are the grating vectors of Gmj and Gim, respectively.
the staggered grating structure of the first mode conversion area 8 and the second mode conversion area 9 is apodized in the transverse direction or the longitudinal direction of the waveguide, so that the crosstalk between two sections of reflection gratings in the staggered grating is reduced. As shown in FIG. 3, lateral apodization refers to adjusting the ratio w/w0 of the grating width to the waveguide width, and longitudinal apodization refers to adjusting the duty cycle P/P0 of the grating.
The mode of the first sampling grating 10 and the mode of the second sampling grating 11 are high-order waveguide modes, the effective refractive index is smaller than lambda/4 d, the grating period is larger than 2d, wherein d is the minimum processing precision, and lambda is the working wavelength of the silicon-based tunable laser.
The first sampling grating 10 and the second sampling grating 11 are superstructure sampling gratings, and the period of the superstructure sampling gratings is linearly changed within a sampling large period, so that the intensities of all levels of the grating reflection spectrum are basically the same.
The first detector 12 and the second detector 13 monitor the optical power, and adjust the phase difference between the two branches by feedback comparison.
The embodiment also provides an implementation method of the silicon-based tunable laser based on the staggered grating, which is characterized in that: the implementation method comprises the following steps:
The method comprises the following steps: preparing an InGaAsP-based reflective gain chip and an SOI chip;
Step two: coupling the gain chip and the SOI chip through a spot-size converter;
Step three: dividing the light coupled and input into the SOI chip by the gain chip into two paths through a first multimode interference coupler and a second multimode interference coupler;
step four: converting the fundamental mode into a high-order mode through the first mode conversion region and the second mode conversion region;
Step five: a laser resonant cavity is formed between the high-reflection end face of the gain chip and the first sampling grating and between the high-reflection end face of the gain chip and the second sampling grating;
step six: the relative phase difference of the two arms of the laser and the overall phase are adjusted through the branch phase area and the common phase area;
Step seven: and monitoring and feedback are carried out through the first grating coupler and the second grating coupler and the first detector and the second detector.
Claims (7)
1. a silicon-based tunable laser based on staggered gratings is characterized in that: the multimode interference grating coupler comprises a gain chip (1), a first multimode interference coupler (2), a first grating coupler (3), a second grating coupler (4), a common phase region (5), a second multimode interference coupler (6), a branch phase region (7), a first mode conversion region (8), a second mode conversion region (9), a first sampling grating (10), a second sampling grating (11), a first detector (12) and a second detector (13), wherein the gain chip (1) is connected with the first multimode interference coupler (2), the first multimode interference coupler (2) is connected with the second grating coupler (4), the first grating coupler (3) and the common phase region (5) are respectively connected with the first multimode interference coupler (2), the second multimode interference coupler (6) is connected with the common phase region (5), and the branch phase region (7) is connected with the second multimode interference coupler (6), the first mode conversion area (8) is connected with the branch phase area (7), the first sampling grating (10) is connected with the first mode conversion area (8), the first detector (12) is connected with the first sampling grating (10), the second mode conversion area (9) is connected with the second multimode interference coupler (6), the second sampling grating (11) is connected with the second mode conversion area (9), the second detector (13) is connected with the second sampling grating (11), the first mode conversion area (8) and the second mode conversion area (9) are formed by staggered gratings, and input low-order waveguide modes are converted into high-order modes.
2. The staggered grating-based silicon-based tunable laser of claim 1, wherein: the staggered grating is composed of two sections of reflective gratings Gmj and Gim, wherein Gmj achieves reflection transformation from an m mode to a j mode, Gim achieves reflection transformation from an i mode to the m mode, m is an intermediate mode, and the two sections of gratings are overlapped to achieve forward transmission transformation from the i mode to the j mode.
3. a staggered grating based silicon-based tunable laser according to claim 1 or 2, wherein: the propagation constants of the interleaved gratings satisfy β j ═ β i + Kmj-Kim, where β i and β j are the propagation constants of the i mode and the j mode, respectively, and Kmj and Kim are the grating vectors of Gmj and Gim, respectively.
4. The staggered grating-based silicon-based tunable laser of claim 1, wherein: the interleaved grating structure is apodized in either the transverse or longitudinal direction of the waveguide.
5. The staggered grating-based silicon-based tunable laser of claim 1, wherein: the mode of the first sampling grating (10) and the mode of the second sampling grating (11) are high-order waveguide modes, the effective refractive index is smaller than lambda/4 d, the grating period is larger than 2d, wherein d is the minimum processing precision, and lambda is the working wavelength of the silicon-based tunable laser.
6. the staggered grating-based silicon-based tunable laser of claim 1, wherein: the first sampling grating (10) and the second sampling grating (11) are superstructure sampling gratings, and the grating period is linearly changed in a large sampling period.
7. A method for implementing a staggered grating based silicon-based tunable laser according to any one of claims 1 to 6, wherein: the implementation method comprises the following steps:
The method comprises the following steps: preparing an InGaAsP-based reflective gain chip and an SOI chip;
step two: coupling the gain chip and the SOI chip through a spot-size converter;
step three: dividing the light coupled and input into the SOI chip by the gain chip into two paths through a first multimode interference coupler and a second multimode interference coupler;
Step four: converting the fundamental mode into a high-order mode through the first mode conversion region and the second mode conversion region;
Step five: a laser resonant cavity is formed between the high-reflection end face of the gain chip and the first sampling grating and between the high-reflection end face of the gain chip and the second sampling grating;
Step six: the relative phase difference of the two arms of the laser and the overall phase are adjusted through the branch phase area and the common phase area;
Step seven: and monitoring and feedback are carried out through the first grating coupler and the second grating coupler and the first detector and the second detector.
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