CN110535027A - For manufacturing the method and optoelectronic semiconductor component of optoelectronic semiconductor component - Google Patents
For manufacturing the method and optoelectronic semiconductor component of optoelectronic semiconductor component Download PDFInfo
- Publication number
- CN110535027A CN110535027A CN201910837614.8A CN201910837614A CN110535027A CN 110535027 A CN110535027 A CN 110535027A CN 201910837614 A CN201910837614 A CN 201910837614A CN 110535027 A CN110535027 A CN 110535027A
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- Prior art keywords
- pressure
- semiconductor
- semiconductor component
- optoelectronic semiconductor
- inserted link
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses technical field of semiconductors for manufacturing the method and optoelectronic semiconductor component of optoelectronic semiconductor component, including semiconductor and pressure disc, the pressure disc is mounted on semiconductor outer wall, it is connected and fixed between two pressure discs by inserted link, spacing collar for fixing inserted link is installed on the inserted link, the optoelectronic semiconductor component the production method is as follows step 1: on the semiconductor by pressure disc installation；Step 2: the semiconductor that two install pressure disc is overlapped；Step 3: two pressure discs are squeezed by pressure device, reach the bottom end of pressure disc with the surface of semiconductor in parallel shape, fixation will be attached by pressure gasket between two semiconductors, pressure gasket has certain deformation nature, while making to contact between two semiconductors, uniform-compression is achieved the purpose that by pressure gasket.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly for the method and photoelectron of manufacture optoelectronic semiconductor component
Semiconductor subassembly.
Background technique
Semiconductor photoelectronic device is to utilize various functions made of semiconductor light-electronics (or electrical-optical) transition effects
Device.It is different from optical semiconductor (such as optical waveguide switch, optical modulator, light deflector).The design principle of optical device
It is the change according to outfield to guided wave circulation way, it is also different from the photoelectric device that early stage people take over.The latter is
Eye is in the reception and conversion (such as photo resistance, photocell) of light energy.The photoelectric device of early stage is only limited to the application of passive type,
The sixties, the appearance as the semiconductor laser of relevant optical carrier source, then made it enter active application stage, photoelectron device
The function of part combined application is extending the function that electronics is difficult to carry out in some aspects (such as optic communication, optical information processing)
Property.
Optoelectronic semiconductor component is during fabrication, it is contemplated that and the fragility of semiconductor is assembled by accurate machine,
Since the numerical value of machine input is that centainly, cannot adjust the link position with component in real time, be easy to cause hardness when assembling
The case where damage, occurs, and larger by the fixed range of machine between the adjacent semiconductor after semiconductor subassembly connection, causes
The case where junction pressure of surrounding is big, and middle of the connection pressure is small, makes discontinuity generation.
Summary of the invention
The purpose of the present invention is to provide the method and optoelectronic semiconductor component for manufacturing optoelectronic semiconductor component,
To solve pressure unbalance stress between the semiconductor on semiconductor subassembly mentioned above in the background art, it be easy to cause damage
Problem.
To achieve the above object, the invention provides the following technical scheme: a kind of optoelectronic semiconductor component, including semiconductor
And pressure disc, the pressure disc are mounted on semiconductor outer wall, are connected and fixed between two pressure discs by inserted link,
Spacing collar for fixing inserted link is installed on the inserted link.
Preferably, the optoelectronic semiconductor component the production method is as follows:
Step 1: on the semiconductor by pressure disc installation；
Step 2: the semiconductor that two install pressure disc is overlapped；
Step 3: being squeezed two pressure discs by pressure device, reaches the bottom end of pressure disc and semiconductor
Surface be in parallel shape；
Step 4: inserted link is inserted into the through-hole on pressure disc, and spacing collar is installed to the other end of inserted link, makes to press
The position of power washer is fixed；
Step 5: infrared scan will be carried out at the optoelectronic semiconductor component gap of coincidence；
Step 6: data adjusting is carried out according to scanning data drive pressure device；
Step 7: the receiving pressure between two optoelectronic semiconductors of detection；
Step 8: pressure device is adjusted according to scan data and maximum pressure of bearing；
Step 9: it takes and bears pressure and two light between two optoelectronic semiconductor contacts while two optoelectronic semiconductors
Gap three optimum data between electronic semi-conductor obtains optimal pressure bearing state.
Preferably, be bonded between pressure disc and semiconductor in the step 1, it is installed between pressure disc and semiconductor
There is insulation spacer.
Preferably, it is overlapped to be in the state stacked by two pressure discs, makes logical on pressure disc in the step 2
Hole is corresponding.
Preferably, in the step 3 working method of pressure device be the bottom of telescopic rod is passed through it is opposite with pressure disc
The platen answered squeezes pressure disc.
Preferably, inserted link is inserted into pressure disc and is fixed inserted link by machine completion in the step 4.
Preferably, infrared scan is completed by infrared scanner in the step 5.
Preferably, data are adjusted through control terminal completion in the step 6.
Preferably, pressure detecting is completed by pressure sensor in the step 7.
Preferably, data are adjusted through control terminal completion in the step 8 and step 9.
Compared with prior art, the beneficial effects of the present invention are: being used to manufacture the side of optoelectronic semiconductor component by this
Method and optoelectronic semiconductor component, optoelectronic semiconductor component is during fabrication, it is contemplated that the fragility of semiconductor passes through precision
Machine is assembled, when assembling due to the numerical value of machine input be it is certain, the link position with component cannot be adjusted in real time,
The case where be easy to causeing hardness to damage, and model fixed by machine between the adjacent semiconductor after semiconductor subassembly connection
The case where enclosing larger, cause the junction pressure of surrounding big, and middle of the connection pressure is small, making discontinuity generation.This
In application documents, fixation being attached by pressure gasket between two semiconductors, pressure gasket has certain deformation nature,
While making to contact between two semiconductors, uniform-compression is achieved the purpose that by pressure gasket.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention；
Fig. 2 is overlooking structure diagram of the present invention；
Fig. 3 is pressure device structural schematic diagram of the present invention.
In figure: 100 pressure discs, 200 semiconductors, 300 inserted links, 400 through-holes, 500 pressure devices.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The invention provides the following technical scheme: a kind of optoelectronic semiconductor component, please refers to Fig. 1-3, including semiconductor 200
With pressure disc 100, pressure disc 100 is mounted on 200 outer wall of semiconductor, is connected between two pressure discs 100 by inserted link 300
Fixation is connect, the spacing collar for fixing inserted link 300 is installed on inserted link 300.
Wherein, the optoelectronic semiconductor component the production method is as follows:
Step 1: pressure disc 100 is mounted on semiconductor 200；
Step 2: the semiconductor 200 that two install pressure disc 100 is overlapped；
Step 3: two pressure discs 100 are squeezed by pressure device 500, reach the bottom end of pressure disc 100
Surface with semiconductor 200 is in parallel shape；
Step 4: inserted link 300 is inserted into the through-hole 400 on pressure disc 100, and spacing collar is installed to inserted link 300
The other end, fix the position of pressure disc 100；
Step 5: infrared scan will be carried out at the optoelectronic semiconductor component gap of coincidence；
Step 6: data adjusting is carried out according to scanning data drive pressure device 500；
Step 7: the receiving pressure between two optoelectronic semiconductors 200 of detection；
Step 8: pressure device 500 is adjusted according to scan data and maximum pressure of bearing；
Step 9: take the contact of two optoelectronic semiconductors 200 bear between two optoelectronic semiconductors 200 simultaneously pressure and
Gap three's optimum data between two optoelectronic semiconductors 200, obtains optimal pressure bearing state.
Wherein, be bonded between pressure disc 100 and semiconductor 200 in step 1, pressure disc 100 and semiconductor 200 it
Between insulation spacer is installed, specifically, insulation spacer for will between pressure disc 100 and semiconductor 200 realize insulation purpose,
To prevent pressure disc 100 from having an impact between semiconductor 200.
Wherein, it is overlapped to be in the state stacked by two pressure discs 100, makes logical on pressure disc 100 in step 2
Hole 400 is corresponding, specifically, the pressure disc 100 stacked keeps its pressure face when being pressurized more uniform, prevents from being pressurized uneven
Caused by 200 component of semiconductor is inclined happens.
Wherein, the working method of pressure device 500 is to pass through the bottom of telescopic rod with pressure disc 100 relatively in step 3
The platen answered squeezes pressure disc 100, specifically, pressure device 500 is made of telescopic rod and platen, telescopic rod and platen
It is threadedly coupled.
Wherein, in step 4 inserted link 300 be inserted into pressure disc 100 and to inserted link 300 be fixed by machine it is complete
At specifically, machine is made of lifting device and clamping device, clamping device and lifting device pass through control terminal and controlled
System, control terminal control lifting device are gone up and down, and clamping device clamps inserted link 300, and cooperation lifting device realizes inserted link
300 movement.
Wherein, infrared scan is completed by infrared scanner in step 5, specifically, infrared scanner is by the information of scanning
It is transferred to the processing that data are carried out after control terminal.
Wherein, data adjusting is completed by control terminal in step 6, specifically, control terminal is external control device, will be examined
The data measured carry out information-based intelligence and adjust comparison.
Wherein, pressure detecting is completed by pressure sensor in step 7, specifically, the pressure that pressure sensor will test
Force information is transferred to control terminal.
Wherein, data are adjusted and are completed by control terminal in step 8 and step 9, specifically, control terminal is external controls
Device is adjusted for carrying out the information-based of data.
Although hereinbefore having been made with reference to some embodiments, present invention is described, of the invention not departing from
In the case where range, various improvement can be carried out to it and can be with equivalent without replacement component therein.Especially, as long as not
There are structural conflict, the various features in presently disclosed each embodiment can be combined with each other by any way
It uses, the description for not carrying out exhaustion to the case where these combinations in the present specification is only to be in omit length and economize on resources
The considerations of.Therefore, the invention is not limited to specific embodiments disclosed herein, and including falling within the scope of the appended claims
All technical solutions.
Claims (10)
1. a kind of optoelectronic semiconductor component, it is characterised in that: including semiconductor (200) and pressure disc (100), the pressure
Washer (100) is mounted on semiconductor (200) outer wall, is connected between two pressure discs (100) by inserted link (300) solid
It is fixed, the spacing collar for fixing inserted link (300) is installed on the inserted link (300).
2. the method according to claim 1 for manufacturing optoelectronic semiconductor (200) component, it is characterised in that: the light
Electronic semiconductor components the production method is as follows:
Step 1: pressure disc (100) is mounted on semiconductor (200)；
Step 2: the semiconductor (200) that two install pressure disc (100) is overlapped；
Step 3: two pressure discs (100) are squeezed by pressure device (500), reach the bottom end of pressure disc (100)
To with the surface of semiconductor (200) be in parallel shape；
Step 4: inserted link (300) is inserted into the through-hole (400) on pressure disc (100) Nei, spacing collar is installed to inserted link
(300) the other end fixes the position of pressure disc (100)；
Step 5: infrared scan will be carried out at the optoelectronic semiconductor component gap of coincidence；
Step 6: data adjusting is carried out according to scanning data drive pressure device (500)；
Step 7: the receiving pressure between two optoelectronic semiconductors (200) of detection；
Step 8: pressure device (500) is adjusted according to scan data and maximum pressure of bearing；
Step 9: take the contact of two optoelectronic semiconductors (200) bear between two optoelectronic semiconductors (200) simultaneously pressure and
Gap three's optimum data between two optoelectronic semiconductors (200), obtains optimal pressure bearing state.
3. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 1
It is be bonded between middle pressure disc (100) and semiconductor (200), insulation is installed between pressure disc (100) and semiconductor (200)
Gasket.
4. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 2
It is middle to be overlapped to be in the state stacked by two pressure discs (100), keep the through-hole (400) on pressure disc (100) corresponding.
5. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 3
The working method of middle pressure device (500) is by platen corresponding with pressure disc (100) by the bottom of telescopic rod to pressure
Washer (100) is squeezed.
6. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 4
Middle inserted link (300) is inserted into pressure disc (100) and inserted link (300) is fixed and completed by machine.
7. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 5
Middle infrared scan is completed by infrared scanner.
8. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 6
Middle data are adjusted to be completed by control terminal.
9. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step 7
Middle pressure detecting is completed by pressure sensor.
10. the method according to claim 2 for manufacturing optoelectronic semiconductor component, it is characterised in that: the step
Eight and step 9 in data adjust by control terminal completion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910837614.8A CN110535027A (en) | 2019-09-05 | 2019-09-05 | For manufacturing the method and optoelectronic semiconductor component of optoelectronic semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910837614.8A CN110535027A (en) | 2019-09-05 | 2019-09-05 | For manufacturing the method and optoelectronic semiconductor component of optoelectronic semiconductor component |
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| Publication Number | Publication Date |
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| CN110535027A true CN110535027A (en) | 2019-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910837614.8A Pending CN110535027A (en) | 2019-09-05 | 2019-09-05 | For manufacturing the method and optoelectronic semiconductor component of optoelectronic semiconductor component |
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| CN107123611A (en) * | 2016-02-24 | 2017-09-01 | 苏斯微技术光刻有限公司 | Semiconductor bond device and correlation technique |
| CN207705566U (en) * | 2017-11-13 | 2018-08-07 | 石家庄麦特达电子科技有限公司 | Semiconductor laser chip packaging and positioning device |
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Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101828277A (en) * | 2007-11-01 | 2010-09-08 | 松下电器产业株式会社 | Semiconductor light emitting element and semiconductor light emitting device using the same |
| CN105406350A (en) * | 2014-09-04 | 2016-03-16 | 佳耐美电气有限公司 | Semiconductor Lasers |
| CN104934851A (en) * | 2015-06-19 | 2015-09-23 | 郑州大学 | Fixture for packaging stack array of semiconductor laser |
| CN204835205U (en) * | 2015-08-17 | 2015-12-02 | 江苏北方湖光光电有限公司 | A buffer gear for high power semiconductor laser |
| CN107123611A (en) * | 2016-02-24 | 2017-09-01 | 苏斯微技术光刻有限公司 | Semiconductor bond device and correlation technique |
| CN107069419A (en) * | 2016-12-27 | 2017-08-18 | 中国科学院长春光学精密机械与物理研究所 | Device of the two-dimentional integration packaging of many laser tubes into area source |
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Application publication date: 20191203 |
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| RJ01 | Rejection of invention patent application after publication |