CN110518361A - A kind of adjustable super surface cell of reflection of 2 bit phases - Google Patents
A kind of adjustable super surface cell of reflection of 2 bit phases Download PDFInfo
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- CN110518361A CN110518361A CN201910780644.XA CN201910780644A CN110518361A CN 110518361 A CN110518361 A CN 110518361A CN 201910780644 A CN201910780644 A CN 201910780644A CN 110518361 A CN110518361 A CN 110518361A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- Aerials With Secondary Devices (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The invention proposes a kind of adjustable super surface cells of reflection of 2 bit phases, for solving the problems, such as that phase compensation accuracy rate existing in the prior art is lower.The adjustable super surface cell of reflection of 2 bit phase, including medium substrate, is printed on the microband paste of medium substrate upper surface and the metal floor of lower surface.The microband paste, using the U-shaped microstrip dipole structure of equiarm.It is closed or simultaneously switches off while the RF switch loaded by the rectangular aperture that regulation U-shaped two side arms of microstrip dipole structure of equiarm are etched or one disconnects a closure, 2 bit phases are adjustable to reflect super surface cell presentation reflected phase difference for four kinds of different phase states of 90 ° of degree.Phase compensation accuracy rate of the invention is high, and design process is simple, simplicity flexible in application, easy to process, can be applied to the fields such as telecommunication, wireless energy transfer.
Description
Technical field
The invention belongs to artificial electromagnetics to surpass field of surface technology, and it is single to be related to a kind of adjustable super surface of reflection of 2 bit phases
Member can be applied to the fields such as telecommunication, wireless energy transfer.
Background technique
The super surface of artificial electromagnetic is usually made of the artificial cellular construction of sub-wavelength that period or paracycle arrange, and is utilized
The super surface of artificial electromagnetic, thus it is possible to vary electromagnetic transmission characteristic.The super surface of artificial electromagnetic be generally divided into the super surface of transmitted electromagnetic and
Reflect the super surface of electromagnetism, wherein the super surface of reflection is generally made of the medium substrate etching microband paste with metal floor.No
The same super surface texture of reflection has different phase distributions, and different phase distributions can generate different electromagnetic radiation directions.
It reflects super surface and is applied to telecommunication, wireless energy transfer etc..The super surface texture of the reflection of early stage once it is determined that, instead
Penetrating super surface just has specific phase distribution characteristic, and this super surface of reflection does not have phase compensation characteristic, is only used for one
Telecommunication or wireless energy transfer in the case of kind.Currently, by loading RF switch on reflecting super surface cell,
Reflecting super surface, there is phase compensation characteristic and a kind of super surface texture of reflection to have a variety of phase distribution characteristics, therefore available
Telecommunication or wireless energy transfer in a variety of situations.
Such as application publication number is CN104078771A, the patent Shen on entitled " a kind of super surface of Digital Programmable "
Please, a kind of super surface cell of reflection is disclosed, is integrated on the microband paste of the medium substrate upper surface etching with metal ground
One switching diode, under two different bias voltages, two different electromagnetism spies can be presented by reflecting super surface cell
Property, i.e., each super surface cell of reflection can switch in real time between two kinds of electromagnetic states.The super surface cell of reflection can be achieved to present
To two different electromagnetism stable states of the reflected phase difference 180 degree of electromagnetic wave.It is simple with design process, letter flexible in application
Just, the advantages that easy to process.But it is disadvantageous in that only there are two types of phase states for the super surface cell of reflection existing for it, although energy
Enough change reflects super surface phase distribution characteristic, but only there are two types of phase state, phase compensations due to reflecting super surface cell
Accuracy rate is lower.
Summary of the invention
It is an object of the invention to overcome the problems of the above-mentioned prior art, it is adjustable to propose a kind of 2 bit phases
Super surface cell is reflected, for solving the lower technical problem of phase compensation accuracy rate existing in the prior art.
To achieve the goals above, the technical solution adopted by the present invention includes a kind of adjustable super table of reflection of 2 bit phases
Face unit, the adjustable super surface cell of reflection of 2 bit phases includes medium substrate 1, the micro-strip for being printed on 1 upper surface of medium substrate
Patch 2 and the metal floor of lower surface 3, which is characterized in that the microband paste 2, using the U-shaped microstrip dipole structure of equiarm,
A rectangular aperture is respectively etched on two side arms of the structure, wherein is etched on a side arm of two side arms of the structure
Rectangular aperture the side arm is truncated as the first micro-strip arm 21 arranged up and down and the second micro-strip arm 22, two side arms of the structure
Another side arm on the rectangular aperture that etches another side arm is truncated as third micro-strip arm 23 and the 4th arranged up and down
Micro-strip arm 24, and the length of the first micro-strip arm 21 and third micro-strip arm 23 is unequal；The rectangular aperture is loaded with RF switch
4；
By the RF switch 4 for regulating and controlling the rectangular aperture load that U-shaped two side arms of microstrip dipole structure of equiarm are etched
While be closed or simultaneously switch off or one disconnects a closure, the super surface cell of the adjustable reflection of 2 bit phases is presented instead
Penetrate four kinds of different phase states that phase phase difference is 90 ° of degree.
The adjustable super surface cell of reflection of above-mentioned 2 bit phase of one kind, four kinds of different phase states are used respectively
Code value " 00 ", " 10 ", " 01 " and " 11 " indicates.
The adjustable super surface cell of reflection of above-mentioned 2 bit phase of one kind, the U-shaped microstrip dipole structure of equiarm,
Micro-strip arm positioned at bottom uses semi-circular shape structure, or vertical with two side arms of the U-shaped microstrip dipole structure of the equiarm
The geometric center of rectangular microstrip structure, the U-shaped microstrip dipole structure of the equiarm is located at the centre normal of 1 upper surface of medium substrate
On, and two side arms are parallel with one group of side of medium substrate 1.
The adjustable super surface cell of reflection of above-mentioned 2 bit phase of one kind, the RF switch 4, using microelectron-mechanical
Any one in system switching, PIN type diode switch and fet switch.
Compared with the prior art, the invention has the following advantages:
The present invention is by respectively etching a rectangular aperture on equiarm two side arms of U-shaped microstrip dipole, and in rectangular slits
RF switch is loaded in gap, by regulating and controlling the closure and disconnection of RF switch, the adjustable super surface cell of reflection of 2 bit phases is in
Existing reflected phase difference effectively increases phase compensation standard compared with prior art for four kinds of different phase states of 90 ° of degree
True rate.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the microband paste of the embodiment of the present invention；
Equivalent circuit when Fig. 3 is the SMP1340-040LF diode closure of the embodiment of the present invention；
Fig. 4 is the equivalent circuit when SMP1340-040LF diode of the embodiment of the present invention disconnects；
Fig. 5 is the adjustable super surface cell of reflection of 2 bit phases of the embodiment of the present invention under infinite period boundary condition
Four kinds of reflection amplitudes；
Fig. 6 is the adjustable super surface cell of reflection of 2 bit phases of the embodiment of the present invention under infinite period boundary condition
Four kinds of phase states；
Specific embodiment
In the following with reference to the drawings and specific embodiments, present invention is further described in detail:
With reference to Fig. 1, the present invention includes medium substrate 1, microband paste 2, metal floor 3；
Medium substrate 1 with a thickness of 2mm, use dielectric constant for 2.65, the rectangular F4B material that loss angle tangent is 0.005
Material, side length p=30mm；The upper and lower surfaces of medium substrate 1 are printed with microband paste 2 and metal floor 3 respectively.
Microband paste 2, structure is as shown in Fig. 2, using the U-shaped microstrip dipole structure of equiarm, the U-shaped wide w of micro-strip arm of equiarm
=3mm is respectively etched with a rectangular aperture, the wide w1=0.35mm of rectangular aperture, wherein the structure on two side arms of the structure
Two side arms a side arm on the rectangular aperture that etches the side arm is truncated as the first micro-strip arm 21 arranged up and down and
Two micro-strip arms 22, it is upper that another side arm is truncated the rectangular aperture etched on another side arm of two side arms of the structure
The third micro-strip arm 23 of lower arrangement and the 4th micro-strip arm 24, and the length of the first micro-strip arm 21 and third micro-strip arm 23 is unequal；
The rectangular aperture is loaded with RF switch 4；
First micro-strip arm 21 and third micro-strip 23 length of arm are unequal, and the phase characteristic possessed is different, so first is micro-
There is phase difference between armed 21 and the phase of third micro-strip arm 23.First micro-strip arm 21 and the different length of third micro-strip arm 23
Difference will lead to the first micro-strip arm 21 and the different phase difference of third micro-strip arm 23.By regulating and controlling penetrating for the rectangular aperture load
The open and close of frequency switch 4, the first micro-strip arm 21 and third micro-strip arm 23 can be connected or be simultaneously switched off simultaneously or one disconnected
It opens one and is connected to the U-shaped microstrip dipole of equiarm, so that the adjustable super surface cell of reflection of 2 bit phases realizes four kinds of phase shapes
State.The RF switch 4 of the load of first micro-strip arm 21 and the second micro-strip arm 22 is closed, and by third micro-strip arm 23 and the 4th
The RF switch 4 of the load of micro-strip arm 24 is closed, and the adjustable super surface cell phase of reflection of 2 bit phases is in present condition 1；By
The RF switch 4 of the load of one micro-strip arm 21 and the second micro-strip arm 22 is closed, and by third micro-strip arm 23 and the 4th micro-strip arm
The RF switch 4 of 24 load disconnects, and the adjustable super surface cell phase of reflection of 2 bit phases is in present condition 2；By the first micro-strip
The RF switch 4 of the load of arm 21 and the second micro-strip arm 22 disconnects, and by third micro-strip arm 23 and the 4th micro-strip arm 24 plus
The RF switch 4 of load is closed, and the adjustable super surface cell phase of reflection of 2 bit phases is in present condition 3；By 21 He of the first micro-strip arm
The RF switch 4 of the load of second micro-strip arm 22 disconnects, and penetrating the load of third micro-strip arm 23 and the 4th micro-strip arm 24
Frequency switch 4 disconnects, and the adjustable super surface cell phase of reflection of 2 bit phases is in present condition 4.Phase state 1 and phase state 2
Phase difference determines by the length of the first micro-strip arm 21, the phase difference of phase state 2 and phase state 3 by the first micro-strip arm 21 length
The length difference of degree and third micro-strip arm 23 determines.The phase difference of phase state 3 and phase state 4 by third micro-strip arm 23 length
It determines.By the length of the first micro-strip arm 21 of selection, third micro-strip arm 23, the adjustable super surface cell of reflection of 2 bit phases is in
Four kinds of different phase states that existing reflected phase difference is spent for 90 °.Wherein, state 1 is indicated with coding " 11 ", the volume of state 2
Code " 10 " indicates that state 3 is indicated with coding " 01 ", and state 4 is indicated with coding " 00 ".
A length of L1=2.7mm of the first micro-strip of the present embodiment arm 21, a length of L2=7.3mm of the second micro-strip arm 22, third
A length of L3=2mm of micro-strip arm 23, a length of L4=8mm of the 4th micro-strip arm 24.The length and third micro-strip of first micro-strip arm 21
The length of arm 23 may be implemented the adjustable super surface cell of reflection of 2 bit phases and reflected phase difference is presented as 90 ° of four kinds spent
Different phase states.
The U-shaped microstrip dipole structure of equiarm, be located at bottom micro-strip arm use semi-circular shape structure, or with equiarm U
The vertical rectangular microstrip structure of two side arms of type microstrip dipole structure.When semicircular ring microstrip structure outer semicircle perimeter with it is interior
When the average value of semicircle perimeter is equal to the long side of rectangular microstrip structure, the phase characteristic one of semicircular ring microstrip structure and rectangular microstrip
It causes, semicircular ring microstrip structure and rectangular microstrip structure are equivalent at this time.The present embodiment uses semicircular ring microstrip structure, and outer ring radius is
R=4.5mm.
The geometric center of the U-shaped microstrip dipole structure of equiarm is located in the centre normal of 1 upper surface of medium substrate, and two
Side arm is parallel with one group of side of medium substrate 1.
RF switch 4, with any in micro electromechanical system switch, PIN type diode switch and fet switch
One kind, the present embodiment uses the PIN type diode of SMP1340-040LF, by loading certain electric current to PIN type diode,
PIN type diode closure is not loaded with electric current to PIN type diode, and PIN type diode disconnects.
The series connection of 1 Ω resistance and 0.45nH inductance is equivalent to when SMP1340-040LF is closed with reference to Fig. 3.
The string of 1 Ω resistance, 0.45nH inductance and 0.16pF capacitor is equivalent to when SMP1340-040LF is disconnected with reference to Fig. 4
Connection.
With reference to Fig. 5, the adjustable super surface cell of reflection of 2 bit phases of the embodiment of the present invention is in infinite period boundary condition
Under four kinds of reflection amplitudes, as seen from the figure, in 5.6GHz to 6.0GHz frequency band, reflection amplitudes be both greater than -4dB, have compared with
Good reflection characteristic.
With reference to Fig. 6, the adjustable super surface cell of reflection of 2 bit phases of the embodiment of the present invention is in infinite period boundary condition
Under four kinds of phase states, as seen from the figure, in 5.8GHz, the phase code of the adjustable super surface cell of reflection of 2 bit phases
Phase code " 10 " phase of " 11 " super surface cell of reflection more adjustable than 2 bit phases falls behind 90 °, and 2 bit phases are adjustable
Reflect phase code " 01 " phase of phase code " 10 " the super surface cell of reflection more adjustable than 2 bit phases of super surface cell
Fall behind 90 °, phase code " 01 " the super table of reflection more adjustable than 2 bit phases of the adjustable super surface cell of reflection of 2 bit phases
Phase code " 00 " phase of face unit falls behind 90 ° and reflected phase phase is presented in the adjustable super surface cell of reflection of 2 bit phases
Four kinds of different phase states that difference is spent for 90 °.
It is that any limitation of the invention is not constituted, it is clear that for ability to a specific embodiment of the invention above
It, all may be in the feelings without departing substantially from the principle of the invention and structure after understanding the content of present invention and principle for the professional in domain
Under condition, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept still exist
In claim and protection scope of the invention.
Claims (4)
1. a kind of adjustable super surface cell of reflection of 2 bit phases, which is characterized in that the adjustable super surface of reflection of 2 bit phases
Unit include medium substrate (1), be printed on medium substrate (1) upper surface microband paste (2) and lower surface metal floor
(3), which is characterized in that the microband paste (2) is each on two side arms of the structure using the U-shaped microstrip dipole structure of equiarm
It is etched with a rectangular aperture, wherein the rectangular aperture etched on a side arm of two side arms of the structure cuts the side arm
Break as the first micro-strip arm (21) arranged up and down and the second micro-strip arm (22), is carved on another side arm of two side arms of the structure
Another side arm is truncated as third micro-strip arm (23) arranged up and down and the 4th micro-strip arm (24) rectangular aperture of erosion, and
The length of one micro-strip arm (21) and third micro-strip arm (23) is unequal；The rectangular aperture is loaded with RF switch (4)；
By the RF switch (4) for regulating and controlling the rectangular aperture load that equiarm U-shaped two side arms of microstrip dipole structure are etched
It is closed at or simultaneously switches off or one disconnects a closure, reflection is presented in the adjustable super surface cell of reflection of 2 bit phases
Phase phase difference is four kinds of different phase states of 90 ° of degree.
2. the adjustable super surface cell of reflection of a kind of 2 bit phase according to claim 1, it is characterised in that described four kinds
Different phase states is indicated with code value " 00 ", " 10 ", " 01 " and " 11 " respectively.
3. the adjustable super surface cell of reflection of a kind of 2 bit phase according to claim 1, which is characterized in that described etc.
The U-shaped microstrip dipole structure of arm, be located at bottom micro-strip arm use semi-circular shape structure, or with the U-shaped micro-strip dipole of the equiarm
The vertical rectangular microstrip structure of two side arms of minor structure, the geometric center of the U-shaped microstrip dipole structure of the equiarm are located at medium
In the centre normal of substrate (1) upper surface, and two side arms are parallel with one group of side of medium substrate (1).
4. the adjustable super surface cell of reflection of a kind of 2 bit phase according to claim 1, which is characterized in that described to penetrate
Frequency switch (4), using any one in micro electromechanical system switch, PIN type diode switch and fet switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910780644.XA CN110518361B (en) | 2019-08-22 | 2019-08-22 | 2-bit phase-adjustable reflection super-surface unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910780644.XA CN110518361B (en) | 2019-08-22 | 2019-08-22 | 2-bit phase-adjustable reflection super-surface unit |
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| CN110518361A true CN110518361A (en) | 2019-11-29 |
| CN110518361B CN110518361B (en) | 2021-01-12 |
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| CN112909572A (en) * | 2021-03-18 | 2021-06-04 | 电子科技大学长三角研究院(湖州) | 3 bit phase place adjustable microstrip reflection element |
| CN112928482A (en) * | 2021-01-20 | 2021-06-08 | 电子科技大学 | Reflection type microwave band programmable 1-bit super surface for multi-beam forming |
| CN115360527A (en) * | 2022-10-20 | 2022-11-18 | 中国科学技术大学 | Single-bit multi-phase space-time two-dimensional random coding super-surface structure |
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