CN110514627A - Silicon wafer method for measuring reflectance and its measuring device - Google Patents
Silicon wafer method for measuring reflectance and its measuring device Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 96
- 239000010703 silicon Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012360 testing method Methods 0.000 claims abstract description 70
- 238000002310 reflectometry Methods 0.000 claims abstract description 57
- 238000001228 spectrum Methods 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims description 31
- 230000003595 spectral effect Effects 0.000 claims description 13
- 238000012517 data analytics Methods 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 5
- 230000004043 responsiveness Effects 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000013399 edible fruits Nutrition 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000007689 inspection Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000010998 test method Methods 0.000 description 5
- 241000227425 Pieris rapae crucivora Species 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
Abstract
The invention discloses a kind of silicon wafer method for measuring reflectance comprising following steps: (1) surface of silicon chip sample is uniformly irradiated to using the light source with special spectrum；(2) light of silicon chip sample surface reflection is focused on photodetector by optical lens；(3) optical signal that photodetector receives is converted to electric signal, and exports result；(4) output result is compared to the reflectivity for obtaining silicon slice under test sample with the test result of standard sample.The invention also discloses a kind of silicon wafer measuring apparatus for reflection index, overall construction design is reasonable, silicon wafer reflectivity can accurately and fast be measured, the otherness of subjective judgement is avoided, speed is fast, precision is high, repeated height, can measure to large area silicon sheet reflectivity, realize mass inspection amount, applied widely, cost is relatively low, is conducive to wide popularization and application.
Description
Technical field
The present invention relates to silicon wafer reflectivity detection technique field, in particular to a kind of silicon wafer method for measuring reflectance and its survey
Measure device.
Background technique
Currently, the measurement method of silicon wafer reflectivity is mainly two methods, the main distinction is that the position of light splitting is different, a kind of
It is to be divided before test sample, another kind is to be divided after test sample to test signal.First method is to make
The light of light source is divided into a spectrum with grating, spectral illumination to slit generates monochromatic light, and monochromatic light is using the operation such as collimation
It is irradiated on sample to be tested with certain small angle (conventional for 8 °) afterwards, the light after sample reflects is accumulated in integrating sphere
Point, the energy of entire reflected light is calculated by the method that the photodetector in integral sphere sidewall detects local light intensity.
The reflectivity of sample at that wavelength is obtained finally by the ratio between reflected energy and projectile energy.The energy of incident light is logical
The reflectivity and reflected energy for crossing standard sample are calculated.Change the available different incident wavelength in inclination angle of grating.Sample
The reflectivity of product single-point is by the integral and acquisition to the reflectivity under each wavelength with sunlight standard spectrum.Therefore want to obtain
The average reflectance for obtaining single-point sample, needing to expend several seconds, even a few minutes could measure entire spectrum.Measurement
Area is determined that the reflectivity finally measured is the average reflectance of entire spot area by spot size.Therefore the technology can not
The reflectivity for being less than spot area is obtained, the reflectivity in big region can not be also obtained.Even if carrying out surface sweeping measurement to whole region,
Also the method for being only through acquisition multiple spot is approximately considered whole region, and this method also needs to take considerable time.Due to the program
It measures two aspects one by one in grating movement and position to require to take a substantial amount of time, therefore the program is unfavorable for industrializing
Application, be only used in laboratory.
Another scheme is to be converged using the light source with wide wave spectrum by lens, is irradiated to inside integrating sphere from side,
When sample is arranged at the optical fiber record bottom at the inclined 8 ° of angles in top and the variation of luminous intensity obtains under each wavelength when having standard sample
Reflectivity under different wave length.Wherein light derived from optical fiber, which enters in fiber spectrometer, is analyzed.Due to fiber spectrometer
In grating be fixed grating, the method by there is the CCD of a length to analyze spectrum is mobile so as to avoid grating
The time of required consuming.But program test zone has aperture decision on integrating sphere, can not obtain more anti-than hole zonule
It penetrates.If necessary to test big region and the first scheme there is a problem of it is identical.It needs to take a substantial amount of time, so
Industry uses and still has more problem.Especially for non-uniform sample, in order to obtain accurate reflectivity,
The method being averaged by multimetering is had to obtain.But the difference of selected point will lead to reflectance test knot every time
Fruit repeatability is excessively poor.If it is desired to improving repeatability, then need to increase the number of measurement point, thus increase time of measurement at
This, it is therefore desirable to it is mutually balanced between repeating property and accuracy and time.
Publication number " CN107845090A ", it is entitled " a kind of silicon wafer detection method and silicon wafer detection device ", it discloses
A kind of silicon wafer detection method carries out albedo measurement by the gray value of each pixel of silicon wafer and the relationship of silicon wafer reflectivity
Method, this method is firstly the need of the calibration for using multiple standard samples to carry out sum of the grayscale values reflectance relationship, it is considered that the two
With linear relationship.But the accuracy of this method measurement result adequately depends on gray value related to reflectivity, in order to
The precision of test is improved, a type of sample, which needs to carry out calibration using the sample of same type, can obtain more accurately
Result.Although because the test of this method can be improved test area and the reduced testing time, sacrifice test
Accuracy and equipment calibration versatility it is poor.
Therefore, it is badly in need of a kind of more accurate and short time of measuring silicon wafer method for measuring reflectance and measuring device, it can
To be measured to large area silicon sheet reflectivity.
Summary of the invention
In view of the above deficiencies, the object of the present invention is to provide a kind of silicon wafer method for measuring reflectance and its measuring devices.
To achieve the above object, the technical solution provided by the present invention is:
A kind of silicon wafer method for measuring reflectance comprising following steps:
(1) surface of silicon chip sample is uniformly irradiated to using the light source with special spectrum；
(2) light of silicon chip sample surface reflection is focused on photodetector by optical lens；
(3) optical signal that photodetector receives is converted to electric signal, and exports result；
(4) output result is compared to the reflection that silicon slice under test sample is calculated with the test result of standard sample
Rate.
As an improvement of the present invention, the light source is the light source compensated for after photo detector spectral responsiveness, institute
The special spectrum for stating light source is 400-500nm, 500-600nm, 600-700nm, 700-800nm, 800-900nm and 900-
The ratio of the percentage of 1100nm, the percentage of the solar global irradiance of this six wave-length coverage actual tests and ideal spectrum irradiation profile
Rate is all between 0.4~2.0；The product of the spectrum of the perfect light source and used photodetector responsiveness is sunlight
Standard AM1.5 spectrum is multiplied by a constant.
As an improvement of the present invention, the photodetector includes CCD or CMOS；The light source is by LED, xenon lamp
It is composed with one or more in halogen lamp.The silicon chip sample be after original cutting, after making herbs into wool, polishing after, diffusion after,
Other products made of silicon wafer, solar battery sheet finished product or use silicon wafer after plated film, after silk-screen printing.
As an improvement of the present invention, the step (4) is calculated using following formula: R=R0/I0*I+b；
Wherein R is the reflectivity of silicon chip sample, and R0 is the reflectivity of standard sample, and I0 is the photoproduction after standard sample measurement
Electric current, I are the photogenerated current after sample to be tested measurement, and b is modifying factor.
As an improvement of the present invention, the output result in the step (3) is gray value, gray value and photoelectricity electricity
The size of stream is directly proportional.
As an improvement of the present invention, the step (4) is calculated using following formula: R=R0/H0*H+b；
Wherein R is the reflectivity of silicon chip sample, and R0 is the reflectivity of standard sample, and H0 is the gray scale after standard sample measurement
Value, H are the gray value after sample to be tested measurement, and b is modifying factor.
A kind of silicon wafer measuring apparatus for reflection index comprising sample stage, light source module, optical lens module, data acquisition module
Block and data analytic operation module, the sample stage are arranged in the intracorporal bottom surface of seal box, the optical lens module and data
Acquisition module is combined to form camera lens, and camera lens setting is arranged in cabinet in the intracorporal top surface of seal box, the light source module,
And towards the sample stage.Wherein the sample stage is for placing silicon slice under test sample；Light source module is used to be placed on sample
Silicon chip sample on platform provides light source uniformly with special spectrum；Optical lens module by silicon chip sample for that will reflect
Light converged and filter out non-reflected light；Data acquisition module is used to be converted by the optical signal of optical lens convergence
Electric signal, and export result.Data analytic operation module is used for the output result of data acquisition module and the survey of standard sample
The reflectivity for obtaining silicon chip sample is compared in test result.
As an improvement of the present invention, the light source module is the sunlight compensated for after photo detector spectral response
Analog light source, the data acquisition module are photodetector, which is single or array arrangement, the light
Electric explorer is CCD or CMOS.
Solar battery sheet is to be applied under sun luminous environment, therefore the reflectivity for measuring solar energy battery adopted silicon chip then needs
To consider solar spectral.At present the albedo measurement of silicon wafer be to solar spectral between λ 1 and λ 2 under each wavelength
Reflectivity is weighted summation according to following formula, to obtain the reflectivity R of measured zone:
Wherein G (λ) is sunlight AM1.5 standard spectrum, the start wavelength and terminate wavelength that λ 1 and λ 2 are respectively tested, one
As in the case of be respectively 300nm and 1100nm.The calculation method needs to know between λ 1 and λ 2 each wavelength under continuous spectrum
Then reflectivity carries out integral and obtains average reflectance R.The method used for measuring silicon wafer reflectivity at present, is by right
The reflectivity R (λ) of each wavelength X carries out one-shot measurement, but in actual test process, for the first test side
Method can only measure the reflection under subwave length according to particular step size due to the mobile accuracy of grating and the limitation of testing time
Rate, by obtaining average reflectance with the method for straight Dai Qu, common step-length is selected as 20nm, 10nm and 1nm etc., to can draw
Play the error of albedo measurement result.
Publication number " CN107845090A ", it is entitled " a kind of silicon wafer detection method and silicon wafer detection device ", it discloses
A kind of silicon wafer detection method, the method used allow for entire spectrum situation, therefore for each pixel, reflectivity
The calculation formula of R (x, y) are as follows:
Wherein GLED(λ) is the LED light spectrogram used, since LED light spectrogram and sunlight SPECTRAL DIVERSITY are very big,
The measurement method can cause biggish error.Therefore it is only capable of calculating reflectivity using the linear relationship of gray value and reflectivity,
Although can reduce the error of some measurements, biggish error is still had.And it will be apparent that for different type
Silicon chip sample, the slope of gray value and reflectivity is that there are apparent differences, therefore each silicon wafer type is required
Calibration is carried out using the silicon wafer of same type to reduce the measurement error of reflectivity.
The invention has the benefit that silicon wafer evaluation method of reflectivity provided by the invention can quantify the appearance feelings of silicon wafer
Condition avoids the otherness of subjective judgement, and speed is fast, precision is high, repeated height；Silicon wafer measuring apparatus for reflection index provided by the invention
It is structurally reasonable, hardware configuration is simple, and functional reliability is high, can accurately and fast measure silicon wafer reflectivity, can be to large area
Silicon wafer reflectivity measures, applied widely, and cost is relatively low, is conducive to wide popularization and application.
With reference to the accompanying drawing with embodiment, the present invention is further described.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silicon wafer measuring apparatus for reflection index of the present invention.
Fig. 2 is the responsiveness of CMOS photodetector.
Fig. 3 is perfect light source spectrogram.
Specific embodiment
Referring to Fig. 1 to Fig. 3, a kind of silicon wafer method for measuring reflectance provided in this embodiment comprising following steps:
(1) silicon wafer sample is uniformly irradiated to using the light source for compensating for the sun optical analog after photo detector spectral responds
The surface of product；The special spectrum of light source is selected in 400-500nm, 500-600nm, 600-700nm, 700-800nm, 800-900nm
And 900-1100nm.The percentage of the percentage of the solar global irradiance of this six wave-length coverage actual tests and ideal spectrum irradiation profile
The ratio of ratio is all between 0.4~2.0.The spectrum of the perfect light source and the product of used photodetector responsiveness are
Sun light standard AM1.5 spectrum is multiplied by a constant.The sun simulating light source is by a kind of or more in LED, xenon lamp and halogen lamp
Kind illuminated in combination forms.The light of light source can uniformly be radiated at the surface of silicon chip sample with any angle；The silicon wafer
Sample be after original cutting, after making herbs into wool, polishing after, diffusion after, the silicon wafer after plated film, after silk-screen printing, solar battery sheet
Finished product uses other products made of silicon wafer；
(2) light of silicon chip sample surface reflection is focused on photodetector by optical lens；The photoelectricity is visited
Surveying device includes CCD or CMOS；
(3) optical signal that photodetector receives is converted to electric signal, and exports result；
(4) output result is compared to the reflection that silicon slice under test sample is calculated with the test result of standard sample
Rate.Specifically, the step (4) is calculated using following formula: R=R0/I0*I+b；Wherein R is the reflection of silicon chip sample
Rate, R0 are the reflectivity of standard sample, and I0 is the photogenerated current after standard sample measurement, and I is the photoproduction after sample to be tested measurement
Electric current, b are modifying factor.
Or, when the output result in the step (3) is gray value, gray value is directly proportional to the size of photoelectric current.
The step (4) is calculated using following formula: R=R0/H0*H+b；Wherein R is the reflectivity of silicon chip sample, and R0 is standard
The reflectivity of sample, H0 are the gray value after standard sample measurement, and H is the gray value after sample to be tested measurement, and b is modifying factor
Son.
A kind of silicon wafer measuring apparatus for reflection index comprising sample stage 1, light source module 2, optical lens module 3, data acquisition
Module and data analytic operation module 4.In the present embodiment, data analytic operation module 4 is desktop computer.Other embodiments
In, the data analytic operation module 4 or industrial personal computer etc..
The sample stage 1 is arranged in the intracorporal bottom surface of seal box, the optical lens module 3 and data acquisition module phase group
Conjunction forms camera lens 3, and the camera lens 3 setting is arranged in cabinet in the intracorporal top surface of seal box, the light source module 2, the choosing of light source
It takes and needs to consider that light source can be with multi-angle uniform irradiation to sample surfaces.
The sample stage 1 is for placing silicon slice under test sample；The silicon wafer that light source module 2 is used for be placed on sample stage 1
Sample provides the light source with special spectrum of uniform multi-angle；Optical lens module 3 by silicon chip sample for that will reflect
Light converged and filter out non-reflected light；Data acquisition module is used to be converted by the optical signal of optical lens convergence
Electric signal, and export result.Data analytic operation module 4 is used for the output result of data acquisition module and the survey of standard sample
The reflectivity for obtaining silicon chip sample is compared in test result.
Canonical measure: being measured using spectrophotometer test method, and the step-length of wavelength is 0.1nm, wherein sample 1,
2,3 and 4 be whole uniform monocrystalline silicon silicon chip sample, and sample 5 and 6 is the polysilicon silicon chip sample that there are different crystal grain on surface.It is right
In monocrystal silicon sample, surface uniformity is preferable, is tested using 25 points, and the testing time is that you can get it accurately and reliably reflects by 900s
Rate result.For multi-crystalline silicon sample, there are different crystal grain on surface, therefore the reflectivity of different zones is entirely different.Test point
Number uses at 100 points, testing time 3000s.Since test step-length is shorter, and multi-point sampler is needed to improve test accuracy,
Therefore the spectrophotometer test method needs the longer testing time, is not suitable among large batch of industrial production.
Embodiment 1:
Use the LED light of the sun optical analog after compensating for photo detector spectral response as light source, the light of the light source
Spectrum is respectively in 400-500nm, 500-600nm, 600-700nm, 700-800nm, 800-900nm and 900-1100nm, and this six
The ratio of the percentage of the solar global irradiance of wave-length coverage actual test and the percentage of ideal spectrum irradiation profile is respectively 0.92,
0.90,0.79,1.08,1.03 and 1.13.Shown in ideal spectrogram CMOS photodetector 1 as shown in Figure 3, photodetector makes
It is CMOS photodetector 1, spectral responsivity is as shown in Figure 2.Turned using the luminous energy that photoelectric sensor converges camera lens
The Comparative result of the current signal turned to, current test results and standard silicon chip obtains the test result of sample following six, tool
Body is referring to table 1.
Table 1
| Sample number into spectrum | Canonical measure | Embodiment 1 | Difference |
| 1 | 8.10% | 8.28% | 0.18% |
| 2 | 8.88% | 9.03% | 0.15% |
| 3 | 30.27% | 30.17% | 0.10% |
| 4 | 11.33% | 11.40% | 0.07% |
| 5 | 18.03% | 18.33% | 0.30% |
| 6 | 22.97% | 23.01% | 0.04% |
Compare with canonical measure result, variance rate between 0.3%, the reflectivity error of monocrystal silicon sample 0.2%,
For the difference in reflectivity of multi-crystalline silicon sample between 0.3%, sufficiently showing this method may indicate that reflectivity, show the test
The accuracy of mode result.The test method either for single crystal samples or Polycrystalline, the testing time be it is identical, only
1s is needed, can equally obtain accurate test result in the accurate situation of test result.
Embodiment 2:
Use the LED light solar simulator of the sun optical analog after compensating for photo detector spectral response as light
Source, the spectrum of light source is respectively in 400-500nm, 500-600nm, 600-700nm, 700-800nm, 800-900nm and 900-
The ratio of the percentage of the solar global irradiance of this six wave-length coverage actual tests of 1100nm and the percentage of ideal spectrum irradiation profile
Rate is respectively 0.95,0.78,0.73,0.83,1.03 and 1.45.The light for being converged camera lens using the array of CCD photoelectric detector 2
It can be converted into current signal, the Comparative result of current test results and standard silicon chip obtains the test result of sample following six,
Referring specifically to table 2.
Table 2
| Sample number into spectrum | Canonical measure | Embodiment 2 | Difference |
| 1 | 8.10% | 8.27% | 0.17% |
| 2 | 8.68% | 8.74% | 0.06% |
| 3 | 30.27% | 30.02% | 0.25% |
| 4 | 11.33% | 11.20% | 0.13% |
| 5 | 18.03% | 18.50% | 0.47% |
| 6 | 22.97% | 22.97% | 0.00% |
It compares with canonical measure result, between 0.5%, the reflectivity error of monocrystal silicon sample exists variance rate
0.25%, for the difference in reflectivity of multi-crystalline silicon sample between 0.5%, sufficiently showing this method may indicate that reflectivity, show
The accuracy of the test mode result.
Since the matching degree of the spectrum and ideal spectrum is poorer than embodiment 1, the accuracy of result is slightly lower.The survey
Method for testing is either for single crystal samples or Polycrystalline, and the testing time is identical, it is only necessary to 1s.
Comparative example 1:
Use common white light LEDs as light source, which is that blue light issues white light under the action of fluorescent powder.It uses
The result pair of the current signal that CMOS photodetector converts the luminous energy that camera lens converges to, current test results and standard silicon chip
Than the test result for obtaining sample following six, referring specifically to table 3.
Table 3
| Sample number into spectrum | Canonical measure | Comparative example 1 | Difference |
| 1 | 8.10% | 9.41% | 1.31% |
| 2 | 8.68% | 8.54% | 0.14% |
| 3 | 30.27% | 31.09% | 0.82% |
| 4 | 11.33% | 11.98% | 0.65% |
| 5 | 18.03% | 19.56% | 1.53% |
| 6 | 22.97% | 26.40% | 3.43% |
It compares with canonical measure result, the variance rate of sample segment is greater than between 1%, or even has a Polycrystalline
Variance rate has reached 3.43%.Therefore use common white light LEDs that can bring biggish error as light source.But for reflectivity
As wavelength change is not very big sample, the accuracy of test result can be lower than 0.5%, therefore common white LED light source
It can be used for the measurement of specific sample reflectivity, but do not have universality, and need to need each type of silicon wafer
It is calibrated using the silicon wafer of the type.The same test method is either for single crystal samples or Polycrystalline, when test
Between be identical, it is only necessary to 1s.
Comparative example 2:
It being measured using spectrophotometer test method, the step-length of wavelength is respectively 10nm, 20nm, 40nm, for
Monocrystal silicon sample 1,2,3 and 4, surface uniformity is preferable, is tested using 9 points, the testing time is respectively 460s, 390s and 330s.
For multi-crystalline silicon sample 5 and 6, there are different crystal grain on surface, therefore the reflectivity of different zones is entirely different.Test point number
Using 100 points, the testing time is respectively 2500s, 2330s and 1900s.Test result is referring specifically to table 4；
Table 4
It compares with canonical measure result, increases the step-length of test wavelength, increase measurement while reducing the testing time
As a result otherness, when step-length is 40nm, variance rate has reached 0.2%.Even if the testing time is still when increasing step-length
It is so longer, it is unable to satisfy industrial use, for polysilicon, needs very more measurement points that can obtain
Obtain accurate result.
Comparative example 3: being measured using the method that sample light splitting afterwards are tested, and the step-length of wavelength selects 10nm, number of test points
Sample is tested using 5 points, 25 points and 64 points, the testing time is respectively 26s, 65s and 110s.Test result referring specifically to
Table 5；
Table 5
It compares with canonical measure result, reduces test point number, can achieve the purpose for reducing the testing time, still
The otherness of measurement result is increased simultaneously.When test point number is reduced at 5, although the time is reduced to 26s,
Variance rate has been more than 5%, mainly caused by the difference in reflectivity situation as polysilicon on different crystal orientations.And it is different
Result difference situation caused by measurement direction is also very big.Increase test point number, can significantly find test result
Variance rate is reducing, so if expect accurately as a result, it is desirable to measurement point as much as possible, but this is apparent increased
The time of test.
Therefore, the present invention is according to albedo measurement formula, after proposing using photo detector spectral response is compensated for
The method of analog light source and photodetector carries out the measurement of reflectivity, and this method can not only reduce time of measuring, can be with
Obtain accurate test result in arbitrary region size.
According to the disclosure and teachings of the above specification, those skilled in the art in the invention can also be to above-mentioned embodiment party
Formula is changed and is modified.Therefore, the invention is not limited to the specific embodiments disclosed and described above, to of the invention
Some modifications and changes should also be as falling into the scope of the claims of the present invention.In addition, although being used in this specification
Some specific terms, these terms are merely for convenience of description, does not limit the present invention in any way.Such as the present invention
Described in above-described embodiment, using other method and devices obtained from same or similar step, protected in the present invention
In range.
Claims (10)
1. a kind of silicon wafer method for measuring reflectance, it is characterised in that: itself the following steps are included:
(1) surface of silicon chip sample is uniformly irradiated to using the light source with special spectrum；
(2) light of silicon chip sample surface reflection is focused on photodetector by optical lens；
(3) optical signal that photodetector receives is converted to electric signal, and exports result；
(4) output result is compared to the reflectivity that silicon slice under test sample is calculated with the test result of standard sample.
2. silicon wafer method for measuring reflectance according to claim 1, it is characterised in that: the light source is to compensate for photoelectricity spy
Light source after surveying device spectral responsivity, the special spectrum of the light source are 400-500nm, 500-600nm, 600-700nm, 700-
800nm, 800-900nm and 900-1100nm, the percentage and desired light of the solar global irradiance of this six wave-length coverage actual tests
The ratio of the percentage of irradiation profile is composed all between 0.4~2.0；The spectrum of the perfect light source and used photoelectricity are visited
The product for surveying device responsiveness is sun light standard AM1.5 spectrum multiplied by a constant.
3. silicon wafer method for measuring reflectance according to claim 1 or 2, it is characterised in that: the photodetector packet
Include CCD or CMOS；The light source is composed of one or more in LED, xenon lamp and halogen lamp.
4. silicon wafer method for measuring reflectance according to claim 1, it is characterised in that: the silicon chip sample is to cut through original
After cutting rear, making herbs into wool, after polishing, after diffusion, the silicon wafer after plated film, after silk-screen printing, solar battery sheet finished product or use silicon wafer
Other manufactured products.
5. silicon wafer method for measuring reflectance according to claim 1, it is characterised in that: the step (4) uses following public affairs
Formula is calculated: R=R0/I0*I+b；
Wherein R is the reflectivity of silicon chip sample, and R0 is the reflectivity of standard sample, and I0 is the photoproduction electricity after standard sample measurement
Stream, I are the photogenerated current after sample to be tested measurement, and b is modifying factor.
6. silicon wafer method for measuring reflectance according to claim 1, it is characterised in that: the output knot in the step (3)
Fruit is gray value, and gray value is directly proportional to the size of photoelectric current.
7. silicon wafer method for measuring reflectance according to claim 6, it is characterised in that: the step (4) uses following public affairs
Formula is calculated: R=R0/H0*H+b；
Wherein R is the reflectivity of silicon chip sample, and R0 is the reflectivity of standard sample, and H0 is the gray value after standard sample measurement, H
For the gray value after sample to be tested measurement, b is modifying factor.
8. a kind of silicon wafer measuring apparatus for reflection index, which is characterized in that it includes
Sample stage, for placing silicon slice under test sample；
Light source module, for providing the uniform light source with special spectrum for the silicon chip sample that is placed on sample stage；
Optical lens module filters out non-reflected light for the light for passing through silicon chip sample reflection to be carried out convergence；
Data acquisition module for converting electric signal for the optical signal for passing through optical lens convergence, and exports result.
9. silicon wafer measuring apparatus for reflection index according to claim 8, it is characterised in that: it further includes data analytic operation mould
Block, for the output result of data acquisition module to be compared to the reflection for obtaining silicon chip sample with the test result of standard sample
Rate.
10. silicon wafer measuring apparatus for reflection index according to claim 8, it is characterised in that: the light source module is to compensate for
Sunlight analog light source after photo detector spectral response, the data acquisition module are photodetector, the photodetection
Device is single or array arrangement, and the photodetector is CCD or CMOS.
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