CN110512275A - A kind of large-size crystals growth single crystal growing furnace - Google Patents
A kind of large-size crystals growth single crystal growing furnace Download PDFInfo
- Publication number
- CN110512275A CN110512275A CN201910944068.8A CN201910944068A CN110512275A CN 110512275 A CN110512275 A CN 110512275A CN 201910944068 A CN201910944068 A CN 201910944068A CN 110512275 A CN110512275 A CN 110512275A
- Authority
- CN
- China
- Prior art keywords
- heater
- quartz ampoule
- muff
- single crystal
- crystal growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 67
- 239000010453 quartz Substances 0.000 claims abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000003708 ampul Substances 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 7
- 239000010431 corundum Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 238000010899 nucleation Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Abstract
The present invention relates to semiconductor preparation facilities fields, more specifically, are related to a kind of large-size crystals growth single crystal growing furnace, including PBN crucible, quartz ampoule, heater, wherein heater includes bottom heater and side-wall heater；Heat loss channel is provided by crucible bottom glass bar；Realize that the heat radiation to furnace core and crucible furnace, quartz ampoule is heated by multiple groups heater, multiple groups heater independent work realizes the heating of different parts different temperatures；It is adjusted by bottom heaters temperature, controls the seeding and shouldering process of crystal.The crystal growth seeding stage reaches the control of control PBN crucible inner conical temperature gradient by the power micro-adjustment to spiral heater, carries out seeding and realizes crystal shouldering.After the completion of shouldering, the substantially adjustment of the logical power for reducing circular cone periphery heater of long body stage increases the temperature gradient on crystal head, and then realize the control to heat leakage approach, realizes the crystal growth liquid level of dimpling, achieve the purpose that the long sized crystals of long major diameter.
Description
Technical field
The present invention relates to semiconductor preparation facilities fields, more specifically, are related to a kind of large-size crystals growth single crystal growing furnace.
Background technique
The heater of existing VGF VB crystal growing furnace is arranged using one or more groups of cylindrical peripheries, is led to
Cross the adjustment of adjustment and structure realization to melt and crystal growth temperature to thermal insulation material.It is raw to be finally reached realization control crystal
Long purpose.But since the thermal insulation property of thermal insulation material is constantly in substantially constant state, During crystal growth
The temperature gradient field adjustment of crystal can only be adjusted by the heater that cylinder peripheral is arranged during entire crystal growth
To achieve the purpose that adjust temperature field.This method for adjusting cylinder peripheral heater is difficult to realize long brilliant in the process to crystal head
The significantly adjustment of portion part and accurate control, therefore grow 6 cun and above high quality large scale semi-insulating GaAs/indium phosphide etc.
Material is relatively difficult.
Summary of the invention
In the presence of overcoming the shortcomings of the prior art, the present invention provides a kind of large-size crystals growth single crystal growing furnace, solution
The problems such as certainly existing large-size crystals growth yield rate is low, of poor quality.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is as follows:
A kind of large-size crystals growth single crystal growing furnace, including PBN crucible, quartz ampoule, heater, the heater include bottom-heated
Device and side-wall heater；The PBN crucible is arranged in quartz ampoule, and the quartz ampoule top is provided with quartz cap, and quartz ampoule is put
It sets on furnace core, bottom heater is provided between the quartz ampoule and furnace core, furnace core is opened in quartz ampoule quartz mouth corresponding position
Equipped with hole is set up, sets up hole lower part and be provided with glass bar；The PBN crucible and quartz ampoule are arranged in attemperator, the guarantor
Warm device is the hollow cylindrical configuration of lower openings, and the attemperator inner wall is inlaid with side-wall heater.
Further, the bottom heater and side-wall heater independently heat.
Further, the bottom heater includes muff and spiral heater, and the muff is top and bottom
The reversed round bench shaped of opening, the spiral heater are spirally wound on outside muff.
Further, the muff uses corundum material.
Further, the muff bus and central axis angle and quartz ampoule cone angle are adapted.
Further, muff bottom surface interior diameter is greater than quartz ampoule seed crystal area diameter, and muff bottom surface overall diameter is big
In erection bore dia；Muff top surface interior diameter is greater than quartz ampoule pipe diameter, and muff top surface overall diameter is less than attemperator
Internal diameter.
Further, the side-wall heater is set as 4-10 group from top to bottom.
Further, the side-wall heater independently operates.
Compared with prior art, the advantageous effect of present invention is that:
The present invention provides a kind of large-size crystals to grow single crystal growing furnace, provides heat loss channel by crucible bottom glass bar；It is logical
It crosses multiple groups heater and realizes that the heat radiation to furnace core and crucible furnace, quartz ampoule is heated, multiple groups heater independent work is realized different
The heating of position different temperatures；It is adjusted by bottom heaters temperature, controls the seeding and shouldering process of crystal.Crystal growth draws
The brilliant stage reaches the control of control PBN crucible inner conical temperature gradient by the power micro-adjustment to spiral heater, is drawn
Crystalline substance simultaneously realizes crystal shouldering.After the completion of shouldering, the substantially adjustment of the logical power for reducing circular cone periphery heater of long body stage increases
The temperature gradient on crystal head, and then realize the control to heat leakage approach, it realizes the crystal growth liquid level of dimpling, reaches and grow up
The purpose of the long sized crystals of diameter.Using crystal growth single crystal growing furnace, 6 inches of semi-insulation gallium arsenide average effective length are by original
Carry out 100mm and rises to 240mm；Change the electricity uniformity of crystalline material, resistance homogeneity is increased to 90% by original 80%.This
The large-size crystals growth single crystal growing furnace that invention provides can be applied to indium phosphide etc., and other use the crystal material of VGF or VB technique growth
Material.
Detailed description of the invention
Fig. 1 is that a kind of large-size crystals provided by the invention grow single crystal furnace structure schematic diagram；
Fig. 2 is bottom heater half-section diagram.
In figure: 1 being PBN crucible, 2 be quartz ampoule, 3 be bottom heater, 31 be muff, 32 be spiral heater, 4 be
Side-wall heater, 5 be quartz cap, 6 be furnace core, 7 be glass bar, 8 be attemperator.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, a kind of large-size crystals grow single crystal growing furnace, including PBN crucible 1, quartz ampoule 2, heater, it is described to add
Hot device includes bottom heater 3 and side-wall heater 4；The PBN crucible 1 is arranged in quartz ampoule 2,2 top of quartz ampoule
It is provided with quartz cap 5, quartz ampoule 2 is placed on furnace core 6, is provided with bottom heater 3, furnace between the quartz ampoule 2 and furnace core 6
Core 6 offers in the quartzy mouth of quartz ampoule 2 corresponding position and sets up hole, sets up hole lower part and is provided with glass bar 7；The PBN crucible 1 with
Quartz ampoule 2 is arranged in attemperator 8, and the attemperator 8 is the hollow cylindrical configuration of lower openings, the attemperator 8
Inner wall is inlaid with side-wall heater 4.
In the present embodiment, the bottom heater 3 and side-wall heater 4 independently heat.
As shown in Fig. 2, the bottom heater 3 includes muff 31 and spiral heater 32, the muff 31 is top
The reversed round bench shaped in portion and bottom opening, the spiral heater 32 are spirally wound on outside muff 31.The muff 31
Using corundum material.31 bus of muff and central axis angle and 2 cone angle of quartz ampoule are adapted.31 bottom surface of muff
Interior diameter is greater than 2 seed crystal area diameter of quartz ampoule, and 31 bottom surface overall diameter of muff, which is greater than, sets up bore dia；It is straight in 31 top surface of muff
Diameter is greater than 2 pipe diameter of quartz ampoule, and 31 top surface overall diameter of muff is less than 8 internal diameter of attemperator.
In the present embodiment, the side-wall heater 4 is set as 4-10 group from top to bottom.The side-wall heater 4 is distinguished
Independent work.
A kind of large-size crystals growth single crystal growing furnace crystal growing process provided in this embodiment is as follows:
Heating schedule is opened, so that temperature measuring point temperature reaches the temperature value of setting near each heater.2 ~ 12 hours making of constant temperature
Material is sufficiently completed.Nearby temperature measuring point temperature is 1250 DEG C to spiral heater at this time.
Crystal growth program is opened, spiral heater heating schedule, temperature measuring point near control bottom spiral heater are adjusted
Temperature drops to 1238 DEG C with 0.5 DEG C/h, completes seeding and shouldering process.
Heating schedule is adjusted after the completion of seeding so that spiral heater nearby temperature measuring point temperature with the decrease speed of 4 DEG C/h,
1100 DEG C are cooled to, crystal growing process is completed.
Only presently preferred embodiments of the present invention is explained in detail above, but the present invention is not limited to above-described embodiment,
Within the knowledge of a person skilled in the art, it can also make without departing from the purpose of the present invention each
Kind variation, various change should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of large-size crystals grow single crystal growing furnace, it is characterised in that: including PBN crucible (1), quartz ampoule (2), heater, institute
Stating heater includes bottom heater (3) and side-wall heater (4)；PBN crucible (1) setting is described in quartz ampoule (2)
Quartz ampoule (2) top is provided with quartz cap (5), and quartz ampoule (2) is placed on furnace core (6), the quartz ampoule (2) and furnace core (6)
Between be provided with bottom heater (3), furnace core (6) offers in the quartzy mouth corresponding position of quartz ampoule (2) and sets up hole, sets up under hole
Portion is provided with glass bar (7)；The PBN crucible (1) and quartz ampoule (2) are arranged in attemperator (8), the attemperator
It (8) is the hollow cylindrical configuration of lower openings, attemperator (8) inner wall is inlaid with side-wall heater (4).
2. a kind of large-size crystals according to claim 1 grow single crystal growing furnace, it is characterised in that: the bottom heater
(3) it is independently heated with side-wall heater (4).
3. a kind of large-size crystals according to claim 1 grow single crystal growing furnace, it is characterised in that: the bottom heater
It (3) include muff (31) and spiral heater (32), the muff (31) is the reversed round bench shaped of top and bottom opening,
It is external that the spiral heater (32) is spirally wound on muff (31).
4. a kind of large-size crystals according to claim 3 grow single crystal growing furnace, it is characterised in that: the muff (3) is adopted
Use corundum material.
5. a kind of large-size crystals according to claim 3 grow single crystal growing furnace, it is characterised in that: the muff (31) is female
Line and central axis angle and quartz ampoule (2) cone angle are adapted.
6. a kind of large-size crystals according to claim 3 grow single crystal growing furnace, it is characterised in that: muff (31) bottom
Face interior diameter is greater than quartz ampoule (2) seed crystal area diameter, and muff (31) bottom surface overall diameter, which is greater than, sets up bore dia；Muff (31)
Top surface interior diameter is greater than quartz ampoule (2) pipe diameter, and muff (31) top surface overall diameter is less than attemperator (8) internal diameter.
7. a kind of large-size crystals according to claim 1 grow single crystal growing furnace, it is characterised in that: the side-wall heater
(4) it is set as 4-10 group from top to bottom.
8. a kind of large-size crystals according to claim 7 grow single crystal growing furnace, it is characterised in that: the side-wall heater
(4) it independently operates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910944068.8A CN110512275A (en) | 2019-09-30 | 2019-09-30 | A kind of large-size crystals growth single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910944068.8A CN110512275A (en) | 2019-09-30 | 2019-09-30 | A kind of large-size crystals growth single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110512275A true CN110512275A (en) | 2019-11-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910944068.8A Pending CN110512275A (en) | 2019-09-30 | 2019-09-30 | A kind of large-size crystals growth single crystal growing furnace |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1543518A (en) * | 2001-07-05 | 2004-11-03 | Axt | Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
| CN1603475A (en) * | 2004-09-06 | 2005-04-06 | 周永宗 | Pure static state double heating apparatus for crystal growth by temperature gradient technique |
| CN1865527A (en) * | 2006-04-21 | 2006-11-22 | 罗建国 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
| JP2009190914A (en) * | 2008-02-13 | 2009-08-27 | Hitachi Cable Ltd | Method for producing semiconductor crystal |
| CN101962800A (en) * | 2010-10-09 | 2011-02-02 | 王楚雯 | Device for producing single crystal ingot by directional solidification method |
| CN205077175U (en) * | 2015-11-03 | 2016-03-09 | 大庆佳昌晶能信息材料有限公司 | VGF method growth of single crystal device |
| CN108060454A (en) * | 2017-12-15 | 2018-05-22 | 广东先导先进材料股份有限公司 | A kind of VGF methods prepare the device and method of gallium arsenide |
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| CN108642559A (en) * | 2018-06-04 | 2018-10-12 | 广东先导先进材料股份有限公司 | Semiconductor crystal stripper apparatus and method |
| CN109252220A (en) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | A kind of VGF/VB arsenide gallium monocrystal furnace structure and growing method |
| CN210711819U (en) * | 2019-09-30 | 2020-06-09 | 山西中科晶电信息材料有限公司 | Large-size crystal growth single crystal furnace |
-
2019
- 2019-09-30 CN CN201910944068.8A patent/CN110512275A/en active Pending
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| CN1543518A (en) * | 2001-07-05 | 2004-11-03 | Axt | Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
| CN1603475A (en) * | 2004-09-06 | 2005-04-06 | 周永宗 | Pure static state double heating apparatus for crystal growth by temperature gradient technique |
| CN1865527A (en) * | 2006-04-21 | 2006-11-22 | 罗建国 | Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof |
| JP2009190914A (en) * | 2008-02-13 | 2009-08-27 | Hitachi Cable Ltd | Method for producing semiconductor crystal |
| CN101962800A (en) * | 2010-10-09 | 2011-02-02 | 王楚雯 | Device for producing single crystal ingot by directional solidification method |
| CN205077175U (en) * | 2015-11-03 | 2016-03-09 | 大庆佳昌晶能信息材料有限公司 | VGF method growth of single crystal device |
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