CN110510569A - Micro clamping device preparation process - Google Patents
Micro clamping device preparation process Download PDFInfo
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- CN110510569A CN110510569A CN201910798750.0A CN201910798750A CN110510569A CN 110510569 A CN110510569 A CN 110510569A CN 201910798750 A CN201910798750 A CN 201910798750A CN 110510569 A CN110510569 A CN 110510569A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/002—Apparatus for assembling MEMS, e.g. micromanipulators
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- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
The present invention relates to micro clamping device preparation process, the preparation process includes: to etch the preparation micro- clamp structure of plane by substrate of SOI piece；It prepares vertical minute-pressure and refers to structure；The micro- clamp structure of plane is fixed with pcb board dispensing, line lead of going forward side by side bonding；First matrix of the micro- clamp structure of plane is placed on microscope carrier；The dispensing in the fitting groove of the first matrix；It clamps vertical minute-pressure and refers to structure, and the assembly pin below the second matrix is placed into fitting groove；Adjust three-dimensional probe platform, probe and vertical minute-pressure is set to refer to the second substrate contact of structure, finely tune probe, refer to that structure is positioned in face of the micro- clamp structure of plane and vertical minute-pressure by the two sides of fitting groove and the first body upper surface three, and the relative position pressed and referred to gripping finger is observed, confirmation rigging position is accurate；Dispensing and solidification is toasted around the second matrix.Preparation method of the present invention is simple, realizes three fingers and declines the micro assemby of clamper.
Description
Technical field
The present invention relates to manufacture MEMS technology technical fields, more particularly to a kind of micro clamping device preparation process.
Background technique
With the fast development of biomedical engineering and MEMS (MEMS), the scale of microoperation object constantly subtracts
It is small.In medicine, biology, adaptive optics, especially animal-plant gene engineering, agricultural product improvement breeding etc. fields, need pair
Single free cell carries out grasp handling and release operation, while needing to inject or detach cell tissue to intracellular.At these
Reason process all be unable to do without the power tool under high-precision micro OS and minute yardstick.In the field MEMS, to micro-nano meter ruler
Part under degree is processed, is adjusted, and requires microoperation and micro assemby system to work such as the assembling works of multiple micro parts
The participation of system.
Micro clamping device needs directly to carry out micro assemby or microoperation object as the end effector in micro OS
Clamping is carried and release operation, plays a crucial role to the implementation of microoperation process.Micro clamping device is as microoperation system
Important tie between system and microoperation object, the success rate or stability of operation directly affect the excellent of micro OS
It is bad.Therefore, it in the field MEMS, develops performance and stablizes effectively, the micro clamping device suitable for related micro OS is to realize MEMS
The important step of technical industry.In the field of scientific studies such as microscopic biological medical research and micro Nano material characteristic, exploitation with
Microoperation size is adapted, and the micro clamping device with excellent clamping effect can greatly facilitate the development in these fields.MEMS
Micro clamping device is generally fabricated from a silicon in technique, a wide range of of its resistivity may be implemented to the doping treatment of silicon materials can
It adjusts, in addition its mechanical performance is equally excellent, can be directly as structural material, and possess good application prospect.
Micro clamping device packaging technology is relatively complicated in the prior art, and assembly difficulty is big, considerably increases process costs.
Therefore, in view of the above technical problems, it is necessary to which a kind of micro clamping device preparation process is provided.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of micro clamping device preparation processes.
To achieve the goals above, the technical solution that one embodiment of the invention provides is as follows:
A kind of micro clamping device preparation process, which is characterized in that the preparation process includes:
The preparation micro- clamp structure of plane is etched by substrate of SOI piece, the micro- clamp structure of plane includes the first matrix, consolidates
Actuating arm, the gripping finger that is fixed on the extensible arm of actuating arm end and is fixed on extensible arm end due to the first matrix side,
One matrix is equipped with several fitting grooves；
It prepares vertical minute-pressure and refers to structure, the vertical minute-pressure refers to that structure includes the second matrix, is fixed on the second matrix side
Flexible beam and be fixed on the pressure of flexible beam end and refer to, several assembly pins are equipped with below the second matrix；
The micro- clamp structure of plane is fixed with pcb board dispensing, line lead of going forward side by side bonding；
First matrix of the micro- clamp structure of plane is placed on microscope carrier；
The dispensing in the fitting groove of the first matrix；
It clamps vertical minute-pressure and refers to structure, and the assembly pin below the second matrix is placed into fitting groove；
Three-dimensional probe platform is adjusted, probe and vertical minute-pressure is made to refer to the second substrate contact of structure, probe is finely tuned, passes through dress
The two sides of slot allocation and the first body upper surface three refer to that structure is positioned in face of the micro- clamp structure of plane and vertical minute-pressure, and
Observation pressure refers to the relative position with gripping finger, and confirmation rigging position is accurate；
Dispensing and solidification is toasted around the second matrix.
Preferably, " the preparation micro- clamp structure of plane is etched by substrate of SOI piece " specifically:
SOI piece is provided, SOI piece includes Si base layer, SiO2 layers and Si structure sheaf；
Photoresist is coated on the first area of Si structure sheaf, and is lithographically formed the photoresist layer with welding disk pattern；
In the enterprising row metal sputtering of photoresist layer, and photoresist layer is removed, forms several lead pad on Si structure sheaf；
Photoresist is coated on the second area of Si structure sheaf, and is lithographically formed with actuating arm, extensible arm and gripping finger figure
The photoresist layer of case；
Deep etching is carried out to SiO2 layers to Si structure sheaf, and removes photoresist layer；
Photoresist is coated on Si base layer, and is lithographically formed the photoresist layer with bottom pattern；
The Si base layer of etched backside, and remove photoresist layer；
Corrode SiO2 layers in BOE solution, release actuating arm, extensible arm and gripping finger.
Preferably, " the preparation micro- clamp structure of plane is etched by substrate of SOI piece " specifically:
Select 4 cun of twin polishing SOI pieces；
Altimeter measures SOI piece with a thickness of 406 ± 0.5 μm；
Four-point probe measurement structure layer resistance is 0.05 Ω cm；
Successively it is cleaned by ultrasonic 10min with acetone, isopropanol, removes surface impurity, the clean crystal column surface of distilled water flushing is miscellaneous
Matter, air gun drying；
Front, which is dried, applies adhesive；
Photoetching；
200 μm of Au of front sputtering, use 10 μm of Cr as adhesive, are cleaned by ultrasonic 1h with acetone soln after the completion of sputtering, molten
Photoresist, the Cr-Au alloy on stripping photoresist are solved, isopropanol is cleaned by ultrasonic 10min, and distilled water cleans up, air gun drying,
Plasma removes residue glue；
Front, which is dried, applies adhesive；
Secondary photoetching；
Positive 50 μm of deep silicon etchings；
Wafer is removed, wafer is cleaned by ultrasonic 10min in ethanol solution, removes silicone oil, ultrasound in acetone soln
30min is cleaned, photoresist is removed, aqueous isopropanol is cleaned by ultrasonic 10min, and distilled water cleans up, air gun drying；
Wafer frontside pastes one piece of blue film protection, and the back side, which is dried, applies adhesive, with AZ6130 photoresist spin coating, revolving speed 1000r/
Min, 15 μm of spin coating thickness, front baking 10min on 100 DEG C of hot plates；
Third time photoetching；
Silicone oil is uniformly smeared in 350 μm of back side deep silicon etching, front, by bonding wafer on etching pallet, since front is carved
Erosion has a deep silicon structure, and more bubbles can be generated after silicone oil by smearing, and wafer, which is put into equipment, to be needed to increase the pumpdown time and made
Bubble is all discharged, and ICP deep silicon etching technique etches 50min, takes out wafer, tests etching depth with step instrument, calculates etching
Rate is placed again into equipment and etches, and calculates according to etch rate, crosses and carves 20 μm, takes out wafer and is placed on microscopically observation, carves
Losing successfully region can see Facad structure, not cut through region in black gray expandable, if it is excessive not etch into oxidation layer region, still need to
Continue to etch；
Wafer and etching pallet are put into 1: 5 BOE solution and corrode 10min, removing oxide layer is removed, discharges structure；
Soaked in absolute ethyl alcohol 1h removes silicone oil, and acetone soak 30min removes photoresist, isopropanol cleaning, and distilled water cleans,
Hot plate drying.
Preferably, 4 cun of twin polishings SOI piece specifically: structure sheaf is 100 > crystal orientation of <, and 110 > trimming of < is thick
50 ± 0.5 μm of degree, p-type doping, electricalresistivityρ=0.1-0.01 Ω cm；1 μm of oxidated layer thickness；100 > crystal orientation of base layer <,
350 ± 10 μm of thickness, n-type doping, electricalresistivityρ=1-5 Ω cm.
Preferably, described " front dry apply adhesive " specifically: use the photoresist spin coating of AZ5214 type, revolving speed 4000r/min,
Glue is 1.5 μm thick, front baking 90s on 95 DEG C of hot plates.
Preferably, described " photoetching " specifically: photoetching welding disk pattern is directed at 110 > crystal orientation of <, and figure is placed in the middle, connects
Touching exposure 2S, with 2.38% tetramethylammonium hydroxide developing liquid developing 45S, distilled water cleans up residual developer solution, and air gun is blown
It is dry.
Preferably, described " front dry apply adhesive " specifically: use the photoresist spin coating of AZ4620 type, revolving speed 2500r/min,
Glue is 4 μm thick, front baking 90s on 95 DEG C of hot plates.
Preferably, described " positive 50 μm of deep silicon etchings " specifically: silicone oil is uniformly smeared at the back side, and bonding wafer is being etched
On pallet, ICP deep silicon etching technique etches 8min, takes out wafer, tests etching depth with step instrument, calculates etch rate, then
Secondary be put into equipment etches, and calculates according to etch rate, and crossing ensures that all etch areas in front etch into oxide layer 10 μm of quarter, shows
Micro- microscopic observation etches into successfully sections bottom oxide layer in lavender or light green color, and it is darkly grey not etch into oxidation layer region
Color, if do not etch into oxidation layer region it is excessive, still need to continue to etch.
Preferably, described " secondary photoetching " specifically: photoetching Facad structure layer, secondary reticle are directed at a photoengraving pattern
Alignment mark, alignment Facad structure figure, contact exposure 4.5S are steamed with 2.38% tetramethylammonium hydroxide developing liquid developing 90s
Distilled water wash clean, air gun dry up, and post bake 5min on 110 DEG C of hot plates, plasma removes residue glue.
Preferably, described " third time photoetching " specifically: etched backside region, with the alignment mark in third time reticle
It is directed at front alignment mark, back side alignment structure graph, contact exposure 6.5s, tetramethylammonium hydroxide and distilled water with 25%
1: 8 mixing, is configured to developer solution, and develop 2-3min, and distilled water flushing is clean, air gun drying, front protecting indigo plant film of tearing, and 110
Post bake 15min on DEG C hot plate, plasma remove residue glue.
The beneficial effects of the present invention are:
Three-dimensional encapsulation technique is designed using MEMS bulk silicon technological, preparation method is simple, realizes three fingers and declines clamper
Micro assemby.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in invention, for those of ordinary skill in the art, without creative efforts,
It is also possible to obtain other drawings based on these drawings.
Fig. 1 is three structural schematic diagram for referring to the clamper that declines in a specific embodiment of the invention；
Fig. 2 is the three another viewing angle constructions schematic diagram for referring to the clamper that declines in a specific embodiment of the invention；
Fig. 3 is three partial structural diagram for referring to the clamper that declines in a specific embodiment of the invention；
Fig. 4 is the schematic illustration of actuating arm in a specific embodiment of the invention；
Fig. 5 is to press the structural schematic diagram referred in a specific embodiment of the invention；
Fig. 6 is three assembling schematic diagram for referring to the clamper that declines in a specific embodiment of the invention；
Fig. 7 is three schematic diagram for referring to the clamper clamping microballoon that declines in a specific embodiment of the invention；
Fig. 8 is micro clamping device preparation technology flow chart in a specific embodiment of the invention.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, below in conjunction with of the invention real
The attached drawing in example is applied, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to protection of the present invention
Range.
The invention discloses the preparation processes that one kind three refers to the clamper that declines characterized by comprising
The preparation micro- clamp structure of plane is etched by substrate of SOI piece, the micro- clamp structure of plane includes the first matrix, is fixed on
The actuating arm of first matrix side, the gripping finger for being fixed on the extensible arm of actuating arm end and being fixed on extensible arm end, the first base
Body is equipped with several fitting grooves；
It prepares vertical minute-pressure and refers to structure, vertical minute-pressure refers to that structure includes the second matrix, is fixed on the soft of the second matrix side
Property beam and be fixed on the pressure of flexible beam end and refer to, several assembly pins are equipped with below the second matrix；
The micro- clamp structure of plane is fixed with pcb board dispensing, line lead of going forward side by side bonding；
First matrix of the micro- clamp structure of plane is placed on microscope carrier；
The dispensing in the fitting groove of the first matrix；
It clamps vertical minute-pressure and refers to structure, and the assembly pin below the second matrix is placed into fitting groove；
Three-dimensional probe platform is adjusted, probe and vertical minute-pressure is made to refer to the second substrate contact of structure, probe is finely tuned, passes through dress
The two sides of slot allocation and the first body upper surface three refer to that structure is positioned in face of the micro- clamp structure of plane and vertical minute-pressure, and
Observation pressure refers to the relative position with gripping finger, and confirmation rigging position is accurate；
Dispensing and solidification is toasted around the second matrix.
Below in conjunction with specific embodiment, the present invention is described in detail.
Join three fingers shown in Fig. 1 to Fig. 6, in an of the invention specific embodiment to decline clamper, including the micro- clamping of plane is tied
Structure and vertical minute-pressure refer to structure, the micro- clamp structure of plane include the first matrix 11, the actuating arm 12 for being fixed on the first matrix side,
The extensible arm 13 for being fixed on actuating arm end and the gripping finger 14 for being fixed on extensible arm end, vertical minute-pressure refer to that structure includes second
Matrix 21, the flexible beam 22 for being fixed on the second matrix side and the pressure for being fixed on flexible beam end refer to 23, and the second matrix 21 is vertical
It is installed on the first matrix 11, actuating arm 12, extensible arm 13 and gripping finger 14 are symmetrical, and actuating arm 12 is electrothermal drive parallel girder
Structure realizes the clamping planar of gripping finger 14 by actuating arm 12, realizes that pressure refers to 23 in the vertical direction by flexible beam 22
Pressure.
The opereating specification of micro clamping device in the present embodiment are as follows: 55 μm -110 μm；The initial opening and closing amount range of micro clamping device: 50 μ
m-120μm；Chucking power provides range: 10 μ N-200 μ N.
Joining the actuating arm 12 shown in Fig. 3, Fig. 4, in the present embodiment includes cold arm 122, hot arm 121 and flexible arm 123, hot arm
121 it is parallel with flexible arm 123 be fixed on the first matrix side, hot arm 121 is located at the outside of flexible arm 123, the fixed peace of cold arm 122
Loaded between hot arm 121 and flexible arm 123, and the sectional area of hot arm 121 is less than the sectional area of cold arm 122.
Wherein, hot arm and flexible arm thickness are equal with width, and hot arm is equal with the thickness of cold arm, and the width of hot arm is less than
The width of cold arm.
Preferably, the material of actuating arm is silicon, and the length of flexible arm is the 10%~15% of hot arm length, the length of actuating arm
Degree is 100 μm~5000 μm, and the width of hot arm and flexible arm is 5~100 μm.
In addition, the first matrix 11 is equipped with several lead pad 111, hot arm 121 and flexible arm 123 respectively with lead pad
111 are electrically connected, and apply voltage between the hot arm 121 and flexible arm 123 of actuating arm by lead pad 111.
Limitation of the micro clamping device that the present invention designs due to three-dimensional encapsulation technique, the structure letter as far as possible of planar section needs
List, driving are directly effective.Driving structure and displacement amplifying mechanism are mused together by the parallel girder construction of electrothermal drive, are avoided
Complicated planar structure, and parallel girder mode sizes flexible design, can be generated with small scale structures big displacement and compared with
Big driving output, therefore the present invention is using the parallel girder construction of electrothermal drive as the driving of planar section and displacement equations mode.
Different electro-thermal bend beam material being affected for its performance, factor mainly have thermal expansion coefficient, elasticity modulus,
Pyroconductivity, resistivity, fusing point etc..In view of silicon resistivity with higher and good heating conduction；Relative to electrostatic force
For magnetic field force, thermal stress is larger；And silicon possesses good yield strength again, yield strength is but better than most metals,
Therefore biggish chucking power can be provided, or can be made the very big structure of amplification ratio.The fusing point of silicon is 1410 DEG C, with steel and iron
Fusing point it is suitable, it means that silicon have the very strong thermal expansion limit.Silicon is the common used material of MEMS device, manufacture craft at
It is ripe reliable, therefore the present embodiment uses silicon as the material of actuating arm.
Join shown in Fig. 4, the actuating arm in the present embodiment is made of cold arm, hot arm and flexible arm.By cold arm end and flexibility
Electrode is connected in arm bottom end, and cold arm, hot arm and flexible arm are equivalent to series resistance.For cold and hot arm due to cross-sectional area difference, electric current is close
Degree is different, and hot arm generates bigger electric heating density than cold arm, and temperature is higher, therefore generates bigger thermal expansion amount, and driving is entire
Structure is bent to cold arm direction.Stop heating, due to heat loss, total will be returned to initial position.
Flexible arm is the key that influence displacement in actuating arm, and flexible arm is narrower, and displacement is bigger, but flexible arm cannot be less than heat
The width of arm, otherwise can because current density be greater than hot arm due to high temperature fuse, usual flexible arm and hot arm are wide.To guarantee that elasticity becomes
Shape, flexible arm answers long enough, but flexible arm is too long, and power loss increases, and displacement reduces instead, optimized calculating, flexible arm
Output displacement is maximum when length takes the 10%~15% of hot arm length.The micro clamping device that the present invention designs is based on silicon bulk fabrication work
Skill, therefore the limitation of working ability is the matter of utmost importance to be considered in design.To make the performance of micro clamping device tend to be optimal, structure
The design of parameter is considered as displacement output area is big, and output chucking power is appropriate, simple and reliable process, and overall dimensions are as small as possible etc.
Factor.Draft its geometric dimension tentatively as 800 μm of arm lengths, 15 μm of width of driving.50 μm of structure general thickness.
Join shown in Fig. 3, extensible arm 13 is S-shaped extensible arm, and S-shaped extensible arm includes several transverse beams being spaced apart and longitudinal direction
Beam, S-shaped extensible arm with a thickness of 10 μm~100 μm, S-shaped extensible arm total length is not less than 500 μm.
The length of transverse beam is from actuating arm to the completely or partially stepped reduction of gripping finger direction, the length self-powered of longitudinal beam
Swing arm is remained unchanged to gripping finger direction.
Micro clamping device haves the shortcomings that terminal temperature is too high, driving force is excessive compared with other actuation manners in the present invention.
Through Finite Element Simulation Analysis, when gripping finger displacement in actuating arm end is 30.5 μm, the temperature of actuating arm structure end is 701 DEG C,
The temperature of gripping finger end is 589 DEG C.When loading 10 μm of deflection in the Y direction to gripping finger end, clamping of the actuating arm in end
Power is 534 μ N, and gripping finger chucking power is 624 μ N.
Terminal temperature is excessively high to be easy to make to clamp object fusing or pyrometamorphism；The excessive clamping for making end gripping finger of driving force
Power is difficult to control, and makes to clamp object deformation or broken.The two disadvantages limit the use scope of micro clamping device.In order to reduce electricity
The terminal temperature and chucking power size of hot bending curved beam, the invention proposes the prioritization scheme of S-shaped beam extensible arm, structure general thickness
It is all 50 μm with actuating arm, the total length of S-shaped beam is 1000 μm.
Horizontal and vertical S-shaped beam is connected to actuating arm end, establishes finite element model, other materials parameter with
Upper simulation analysis is identical.Compared with actuating arm directly drives gripping finger end, using S-shaped girder construction, when gripping finger end generates 10 μm
Deflection when, the chucking power of gripping finger end can be reduced to 100 μ N-200 μ N, this is the common chucking power model of micro clamping device
It encloses.
Join shown in Fig. 3, flexible beam 22 is soft under including lower flexible beam 221 disposed in parallel and upper flexible beam 222 and being located at
Property the lower section of beam 221 S type flexible beam 223, pressure refers to 23 ends for being set to S type flexible beam 223.Pressure refers to that 23 are located among two gripping fingers 14
The lower section in region, and press along plane in being obliquely installed upwards, tilt angle is 10 °~15 °.
Based on the requirement that adhesion strength refers to decline clamper Operations Analyst and operation object with three, with plane actuating arm bottom surface
For coordinate origin, vertical minute-pressure refers to that the minimum stroke of end movement is 55 μm, when appearing in release 55 μm of microballoons of diameter；Highest line
Journey is 110 μm, when appearing in pickup 110 μm of microballoons of diameter.In entire stroke range, vertical minute-pressure, which refers to, to provide 80 to microballoon
Pressure between μ N-200 μ N.
It is limited by MEMS technology, micro clamping device vertical portion is difficult to carry out wire bonding and can not power to it.Therefore right
Vertical minute-pressure refers to the driving method for not being available MEMS routine.The present invention refers to using flexible beam mode, by micro- vertical minute-pressure
Clamping object realizes the variation of itself and the micro- gripping finger relative position of plane to the pressure that vertical minute-pressure refers to, pressure refers to initial position in plane
Below micro- retained part bottom surface at 15 μm.
Join shown in Fig. 3, Fig. 5 and Fig. 7, the medial surface of gripping finger 14 is equipped with the first broached-tooth design 141, and pressure refers to 23 lower surface
Be equipped with the second broached-tooth design 231, the first broached-tooth design 141 and the secondary sawtooth of the second broached-tooth design 231 with a thickness of 1 μm~5 μm,
Saw-tooth apex angle is 50 °~70 °.
When picking up and discharging operation, vertical pressure refers to that end can make microoperation more steady with operation substrate holding level
It is fixed.To generally be placed between micro clamping device and substrate when due to microoperation it is angled, by micro- gripping finger end and plane
Retained part is designed as 15 ° of angles to meet minute-pressure as far as possible and refer to that end and operation substrate holding are horizontal.
To better meet microoperation requirement, it is combined with the theoretical analysis of middle roughness and the qualitative analysis of adhesion strength and technique is added
Work condition uses dentalation in the design of micro- gripping arm face, increases the roughness of clamping face.Comprehensive MEMS technology
Production technique designs 3.5 μm of sawtooth thickness, 60 ° of saw-tooth apex angle.
Join shown in Fig. 6, the micro- clamp structure of plane and vertical minute-pressure refer to that structure is positioned by micro assemby mode, use gluing process
It is fixed.Corresponding fitting groove 112 and assembly pin 211, the first matrix 11 are respectively equipped on first matrix 11 and the second matrix 21
It is fixedly mounted with the second matrix 12 by fitting groove 112 and assembly pin 211.
Electrothermal actuating arm can make dispensing position generate higher temperature, and common dispensing glue is difficult to meet design need
It wants, the ethyl insulative glue of model ergo5881 is used in the present embodiment, maximum operating temperature range is 140 DEG C.
Three refer to that the preparation process for the clamper that declines includes wire bonding, micro assemby and dispensing fixing step, tool in the present invention
Body are as follows:
The preparation micro- clamp structure of plane is etched by substrate of SOI piece, the micro- clamp structure of plane includes the first matrix, is fixed on
The actuating arm of first matrix side, the gripping finger for being fixed on the extensible arm of actuating arm end and being fixed on extensible arm end, the first base
Body is equipped with several fitting grooves；
It prepares vertical minute-pressure and refers to structure, vertical minute-pressure refers to that structure includes the second matrix, is fixed on the soft of the second matrix side
Property beam and be fixed on the pressure of flexible beam end and refer to, several assembly pins are equipped with below the second matrix；
The micro- clamp structure of plane is fixed with pcb board dispensing, line lead of going forward side by side bonding；
First matrix of the micro- clamp structure of plane is placed on microscope carrier, adjusts objective table to micro clamping device aobvious
Micro mirror visual field center, adjusts suitable enlargement ratio and focal length；
The dispensing in the fitting groove of the first matrix；
It clamps vertical minute-pressure and refers to structure, and the assembly pin below the second matrix is placed into fitting groove；
Three-dimensional probe platform is adjusted, probe and vertical minute-pressure is made to refer to the second substrate contact of structure, probe is finely tuned, passes through dress
The two sides of slot allocation and the first body upper surface three refer to that structure is positioned in face of the micro- clamp structure of plane and vertical minute-pressure, and
Observation pressure refers to the relative position with gripping finger, and confirmation rigging position is accurate；
The dispensing around the second matrix toasts 4h on 40 DEG C of hot plates, and dispensing that the glue solidifies is completed.
As shown in connection with fig. 8, the preparation micro- clamp structure of plane is etched by substrate of SOI piece in the present embodiment specifically:
(a) SOI piece is provided, SOI piece includes Si base layer, SiO2Layer and Si structure sheaf；
(b) photoresist is coated on the first area of Si structure sheaf, and is lithographically formed the photoresist layer with welding disk pattern；
(c) in the enterprising row metal sputtering of photoresist layer, and photoresist layer is removed, forms several lead welderings on Si structure sheaf
Disk；
(d) photoresist is coated on the second area of Si structure sheaf, and is lithographically formed with actuating arm, extensible arm and gripping finger
The photoresist layer of pattern；
(e) deep etching is carried out to SiO to Si structure sheaf2Layer, and remove photoresist layer；
(f) photoresist is coated on Si base layer, and is lithographically formed the photoresist layer with bottom pattern；
(g) the Si base layer of etched backside, and remove photoresist layer；
(h) corrode SiO in BOE solution2Layer, release actuating arm, extensible arm and gripping finger.
Specific processing process are as follows:
(1) select 4 cun of twin polishing SOI pieces: structure sheaf is 100 > crystal orientation of <, 110 > trimming of <, 50 ± 0.5 μ of thickness
M, p-type doping, electricalresistivityρ=0.1-0.01 Ω cm；1 μm of oxidated layer thickness；100 > crystal orientation of base layer <, thickness 350 ± 10
μm, n-type doping, electricalresistivityρ=1-5 Ω cm.
(2) altimeter measures SOI piece with a thickness of 406 ± 0.5 μm.
(3) four-point probe measurement structure layer resistance is 0.05 Ω cm.
(4) successively it is cleaned by ultrasonic 10min with acetone, isopropanol, removes surface impurity, the clean crystal column surface of distilled water flushing
Impurity, air gun drying.
(5) front, which is dried, applies adhesive.With AZ5214 type photoresist spin coating, revolving speed 4000r/min, glue is 1.5 μm thick, 95 DEG C of heat
Front baking 90s on plate.
(6) photoetching: photoetching welding disk pattern is directed at 110 > crystal orientation of <, and figure is placed in the middle, contact exposure 2S.With 2.38%
Tetramethylammonium hydroxide developing liquid developing 45S, distilled water clean up residual developer solution, air gun drying.
(7) 200 μm of Au of front sputtering, use 10 μm of Cr as adhesive.It is cleaned by ultrasonic after the completion of sputtering with acetone soln
1h dissolves photoresist, the Cr-Au alloy on stripping photoresist, and isopropanol is cleaned by ultrasonic 10min, and distilled water cleans up, air gun
Drying, plasma remove residue glue.
(8) front, which is dried, applies adhesive.With AZ4620 type photoresist spin coating, revolving speed 2500r/min, glue is 4 μm thick, 95 DEG C of hot plates
Upper front baking 90s.
(9) secondary photoetching: photoetching Facad structure layer, secondary reticle are directed at a photoengraving pattern alignment mark, and alignment is just
Face structure graph, contact exposure 4.5S.With 2.38% tetramethylammonium hydroxide developing liquid developing 90s.Distilled water wash clean, air gun
It dries up, post bake 5min on 110 DEG C of hot plates, plasma removes residue glue.
(10) positive 50 μm of deep silicon etchings.Silicone oil is uniformly smeared at the back side, by bonding wafer on etching pallet, ICP depth silicon
Etching technics etches 8min, takes out wafer, tests etching depth with step instrument, calculates etch rate, be placed again into equipment and carve
Erosion, calculates according to etch rate, and crossing ensures that all etch areas in front etch into oxide layer 10 μm of quarter.Microscopically observation etching
It is in lavender or light green color to success sections bottom oxide layer, oxidation layer region darkly grey is not etched into, if do not etched into
It is excessive to aoxidize layer region, still needs to continue to etch.
(11) wafer is removed, wafer is cleaned by ultrasonic 10min in ethanol solution, removes silicone oil.In acetone soln
It is cleaned by ultrasonic 30min, removes photoresist.Aqueous isopropanol is cleaned by ultrasonic 10min, and distilled water cleans up, air gun drying.
(12) wafer frontside pastes one piece of blue film protection, and the back side, which is dried, applies adhesive, with AZ6130 photoresist spin coating, revolving speed
1000r/min, 15 μm of spin coating thickness, front baking 10min on 100 DEG C of hot plates.
(13) third time photoetching: etched backside region.With the alignment mark front in third time reticle to fiducial mark
Note, back side alignment structure graph, contact exposure 6.5s are mixed with distilled water 1:8 with 25% tetramethylammonium hydroxide, are configured to
Developer solution, develop 2-3min.Distilled water flushing is clean, air gun drying, front protecting indigo plant film of tearing, post bake on 110 DEG C of hot plates
15min, plasma remove residue glue.
(14) 350 μm of back side deep silicon etching.It is positive uniformly to smear silicone oil, by bonding wafer on etching pallet.Due to just
Face is etched with deep silicon structure, can generate more bubbles after smearing silicone oil.Wafer, which is put into, to be needed to increase the pumpdown time in equipment
Bubble is discharged all.ICP deep silicon etching technique etches 50min, takes out wafer, tests etching depth with step instrument, calculates
Etch rate is placed again into equipment and etches, and calculates according to etch rate, crosses and carves 20 μm.Taking-up wafer is put to be seen under the microscope
It examines, etching successfully region can see Facad structure, region not cut through in black gray expandable, if not etching into oxidation layer region mistake
Greatly, it still needs to continue to etch.
(15) wafer and etching pallet are put into 1: 5 BOE solution and corrode 10min, remove removing oxide layer, discharge structure.
(16) soaked in absolute ethyl alcohol 1h removes silicone oil, and acetone soak 30min removes photoresist, isopropanol cleaning, distilled water
Cleaning, hot plate drying.
As can be seen from the above technical solutions, the invention has the following advantages:
Three-dimensional encapsulation technique is designed using MEMS bulk silicon technological, preparation method is simple, realizes three fingers and declines clamper
Micro assemby.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (10)
1. a kind of micro clamping device preparation process, which is characterized in that the preparation process includes:
The preparation micro- clamp structure of plane is etched by substrate of SOI piece, the micro- clamp structure of plane includes the first matrix, is fixed on
The actuating arm of first matrix side, the gripping finger for being fixed on the extensible arm of actuating arm end and being fixed on extensible arm end, the first base
Body is equipped with several fitting grooves；
It prepares vertical minute-pressure and refers to structure, the vertical minute-pressure refers to that structure includes the second matrix, is fixed on the soft of the second matrix side
Property beam and be fixed on the pressure of flexible beam end and refer to, several assembly pins are equipped with below the second matrix；
The micro- clamp structure of plane is fixed with pcb board dispensing, line lead of going forward side by side bonding；
First matrix of the micro- clamp structure of plane is placed on microscope carrier；
The dispensing in the fitting groove of the first matrix；
It clamps vertical minute-pressure and refers to structure, and the assembly pin below the second matrix is placed into fitting groove；
Three-dimensional probe platform is adjusted, probe and vertical minute-pressure is made to refer to the second substrate contact of structure, probe is finely tuned, passes through fitting groove
Two sides and the first body upper surface three refer to that structure is positioned in face of the micro- clamp structure of plane and vertical minute-pressure, and observe
Pressure refers to the relative position with gripping finger, and confirmation rigging position is accurate；
Dispensing and solidification is toasted around the second matrix.
2. micro clamping device preparation process according to claim 1, which is characterized in that " flat as substrate etching preparation using SOI piece
The micro- clamp structure in face " specifically:
SOI piece is provided, SOI piece includes Si base layer, SiO2Layer and Si structure sheaf；
Photoresist is coated on the first area of Si structure sheaf, and is lithographically formed the photoresist layer with welding disk pattern；
In the enterprising row metal sputtering of photoresist layer, and photoresist layer is removed, forms several lead pad on Si structure sheaf；
Photoresist is coated on the second area of Si structure sheaf, and is lithographically formed with actuating arm, extensible arm and gripping finger pattern
Photoresist layer；
Deep etching is carried out to SiO to Si structure sheaf2Layer, and remove photoresist layer；
Photoresist is coated on Si base layer, and is lithographically formed the photoresist layer with bottom pattern；
The Si base layer of etched backside, and remove photoresist layer；
Corrode SiO in BOE solution2Layer, release actuating arm, extensible arm and gripping finger.
3. micro clamping device preparation process according to claim 2, which is characterized in that " flat as substrate etching preparation using SOI piece
The micro- clamp structure in face " specifically:
Select 4 cun of twin polishing SOI pieces；
Altimeter measures SOI piece with a thickness of 406 ± 0.5 μm；
Four-point probe measurement structure layer resistance is 0.05 Ω cm；
Successively it is cleaned by ultrasonic 10min with acetone, isopropanol, removes surface impurity, the clean crystal column surface impurity of distilled water flushing, gas
Rifle drying；
Front, which is dried, applies adhesive；
Photoetching；
200 μm of Au of front sputtering, use 10 μm of Cr as adhesive, are cleaned by ultrasonic 1h, dissolution with acetone soln after the completion of sputtering
Photoresist, the Cr-Au alloy on stripping photoresist, isopropanol are cleaned by ultrasonic 10min, and distilled water cleans up, air gun drying, etc.
Gas ions remove residue glue；
Front, which is dried, applies adhesive；
Secondary photoetching；
Positive 50 μm of deep silicon etchings；
Wafer is removed, wafer is cleaned by ultrasonic 10min in ethanol solution, silicone oil is removed, is cleaned by ultrasonic in acetone soln
30min removes photoresist, and aqueous isopropanol is cleaned by ultrasonic 10min, and distilled water cleans up, air gun drying；
Wafer frontside pastes one piece of blue film protection, and the back side, which is dried, applies adhesive, and with AZ6130 photoresist spin coating, revolving speed 1000r/min is even
15 μm of glue thickness, front baking 10min on 100 DEG C of hot plates；
Third time photoetching；
Silicone oil is uniformly smeared in 350 μm of back side deep silicon etching, front, by bonding wafer on etching pallet, since front is etched with
Deep silicon structure can generate more bubbles after smearing silicone oil, and wafer, which is put into equipment, to be needed to increase the pumpdown time and made bubble
All discharges, ICP deep silicon etching technique etch 50min, take out wafer, test etching depth with step instrument, calculate etch rate,
It is placed again into equipment and etches, calculated according to etch rate, cross and carve 20 μm, take out wafer and be placed on microscopically observation, be etched into
Function region can see Facad structure, not cut through region in black gray expandable, if it is excessive not etch into oxidation layer region, still need to continue
Etching；
Wafer and etching pallet are put into 1: 5 BOE solution and corrode 10min, removing oxide layer is removed, discharges structure；
Soaked in absolute ethyl alcohol 1h removes silicone oil, and acetone soak 30min removes photoresist, isopropanol cleaning, distilled water cleaning, hot plate
Drying.
4. micro clamping device preparation process according to claim 3, which is characterized in that 4 cun of twin polishings SOI piece is specific
Are as follows: structure sheaf is<100>crystal orientation, and<110>trimming, 50 ± 0.5 μm of thickness, p-type is adulterated, electricalresistivityρ=0.1-0.01 Ω cm；
1 μm of oxidated layer thickness；Base layer<100>crystal orientation, 350 ± 10 μm of thickness, n-type doping, electricalresistivityρ=1-5 Ω cm.
5. micro clamping device preparation process according to claim 3, which is characterized in that " front, which is dried, applies adhesive " is specific
Are as follows: the photoresist spin coating of AZ5214 type is used, revolving speed 4000r/min, glue is 1.5 μm thick, front baking 90s on 95 DEG C of hot plates.
6. micro clamping device preparation process according to claim 3, which is characterized in that " photoetching " specifically: light
Welding disk pattern is carved, is directed at<110>crystal orientation, figure is placed in the middle, contact exposure 2S, with 2.38% tetramethylammonium hydroxide developing liquid developing
45S, distilled water clean up residual developer solution, air gun drying.
7. micro clamping device preparation process according to claim 3, which is characterized in that " front, which is dried, applies adhesive " is specific
Are as follows: the photoresist spin coating of AZ4620 type is used, revolving speed 2500r/min, glue is 4 μm thick, front baking 90s on 95 DEG C of hot plates.
8. micro clamping device preparation process according to claim 3, which is characterized in that " the positive 50 μm of deep silicon etchings " tool
Body are as follows: silicone oil is uniformly smeared at the back side, and by bonding wafer on etching pallet, ICP deep silicon etching technique etches 8min, is taken out brilliant
Circle tests etching depth with step instrument, calculates etch rate, be placed again into equipment and etch, calculate according to etch rate, crosses and carve
10 μm ensure that all etch areas in front etch into oxide layer, and microscopically observation etches into successfully sections bottom oxide layer in light
Purple or light green color do not etch into oxidation layer region darkly grey, if it is excessive not etch into oxidation layer region, still need to continue to carve
Erosion.
9. micro clamping device preparation process according to claim 3, which is characterized in that " the secondary photoetching " specifically: light
Facad structure layer is carved, secondary reticle is directed at a photoengraving pattern alignment mark, alignment Facad structure figure, contact exposure
4.5S, with 2.38% tetramethylammonium hydroxide developing liquid developing 90s, distilled water wash clean, air gun is dried up, hard on 110 DEG C of hot plates
Film 5min, plasma remove residue glue.
10. micro clamping device preparation process according to claim 3, which is characterized in that " the third time photoetching " specifically:
Etched backside region, with the alignment mark front alignment mark in third time reticle, back side alignment structure graph, contact
6.5s is exposed, is mixed with 25% tetramethylammonium hydroxide with distilled water 1: 8, developer solution is configured to, develop 2-3min, distilled water
It rinses well, air gun drying, front protecting indigo plant film of tearing, post bake 15min on 110 DEG C of hot plates, plasma removes residue glue.
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| CA2551191A1 (en) * | 2006-06-23 | 2007-12-23 | Keekyoung Kim | Electrothermally-driven mems microgrippers with integrated dual-axis capacitive force sensors |
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| CA2551191A1 (en) * | 2006-06-23 | 2007-12-23 | Keekyoung Kim | Electrothermally-driven mems microgrippers with integrated dual-axis capacitive force sensors |
| CN102079498A (en) * | 2010-11-18 | 2011-06-01 | 大连理工大学 | Flexible electrothermal drive micro-gripper and manufacturing process method |
| TW201515987A (en) * | 2013-10-22 | 2015-05-01 | Nat Univ Chung Hsing | Active steady state clamp release system |
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