CN110504323A - A kind of flexible thin-film transistor and preparation method thereof - Google Patents
A kind of flexible thin-film transistor and preparation method thereof Download PDFInfo
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- CN110504323A CN110504323A CN201910805592.7A CN201910805592A CN110504323A CN 110504323 A CN110504323 A CN 110504323A CN 201910805592 A CN201910805592 A CN 201910805592A CN 110504323 A CN110504323 A CN 110504323A
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- 238000007639 printing Methods 0.000 claims abstract description 27
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to technical field of semiconductor device, and in particular to a kind of flexible thin-film transistor and preparation method thereof.The device includes bottom gate thin film (4), gate dielectric layer (1), source electrode (2) and drain electrode (3), transistor channel layer (5) from bottom to top.In the flexible thin-film transistor, Kapton is directly as gate dielectric layer；After being surface-treated to Kapton, seed layer is catalyzed in its two sides spray printing respectively, then chemically grown metallic copper in chemical copper solution is placed it in, forms copper source pole (2), copper drain electrode (3) and copper grid (4) on the two sides of polyimide substrate respectively；Active layer is formed using ink jet printing.The method that the present invention forms flexible thin-film transistor is simple, efficient, at low cost；Prepared flexible thin-film transistor structure is simple, electric property is excellent, bending resistance is good.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of flexible thin-film transistor and preparation method thereof.
Background technique
In recent years, the transient metal chalcogenide compound with class graphene layer structure causes the extensive concern of people.
Most of transient metal chalcogenide compounds possess the natural band gap of 1~2eV, and material physical property is excellent, this make they
Logic number integrated circuit connection has huge application potential.Particularly, the direct band gap of single layer transient metal chalcogenide compound
Characteristic, so that it has important application in fields such as optics, opto-electronic device and sensors.
In the traditional handicraft for preparing transistor, device channel is prepared using photoetching technique, need to be passed through photoetching, be shown
The cumbersome process such as shadow, etching.Nowadays ink-jet printing technology increasingly shows advantage in electronic material functional layer is graphically prepared,
It is not necessarily to mask plate and photoresist, only can need to arbitrarily regulate and control printing process and printed patterns using digital printing technology, have
Have the advantages that simple, quick, process integration is high, program-controlled accuracy enables material loss largely to obtain
Control, without the characteristic of contact and adjustable spray printing distance can protective substrate to the full extent surface state.
Currently, two-dimentional transient metal chalcogenide compound material is applied to thin film transistor (TFT), there are asking for the following aspects
Topic: (1) single layer or few layer two dimension transient metal chalcogenide compound material mostly use chemical vapour deposition technique to prepare greatly, then through turning
Journey is moved past to SiO2In/Si substrate, operation difficulty is big, technological flexibility is poor, process cycle is long, and device yield is low；(2) it is based on
The thin-film transistor performance of few layer two dimension transient metal chalcogenide compound material is poor；(3) it is prepared into using traditional micro fabrication
To source electrode and drain electrode, there are problems that high production cost, complex process；(4) fexible film crystal is being prepared using printing technology
In the research of pipe, source electrode, drain and gate are prepared using printing silver conductive ink, is made using organic insulating polymeric material is printed
For gate insulating layer, this causes preparation cost high, each function interlayer poor compatibility, and limitation of the flexible substrate to high annealing
Cause device performance bad.
Summary of the invention
For the problems of the two-dimentional transient metal chalcogenide compound thin film transistor (TFT) that the prior art is realized, this hair
It is bright that a kind of flexible thin-film transistor and preparation method thereof is provided, its object is to: simplify the preparation flow of flexible thin-film transistor,
Preparation difficulty is reduced, is greatly decreased preparation cost, device architecture is simple, can prepare in batches and function admirable.
The technical solution adopted by the invention is as follows:
A kind of flexible thin-film transistor successively includes bottom gate thin film, insulation gate dielectric layer, source-drain electrode array from the bottom to top
Layer and active layer, the insulation gate dielectric layer are used as the substrate of flexible thin-film transistor simultaneously, the source-drain electrode array layer by
The array of source electrode and drain electrode composition is constituted.
In the technical solution, baseplate material itself is as insulation gate dielectric layer, in addition, the thin film transistor (TFT) belongs to bottom gate bottom
Contact structures, therefore, the preparation method of the thin film transistor (TFT) are simple.
Preferably, the composition material of gate dielectric layer of insulating is flexible material polyimides, and the thickness of Kapton
Less than 100 μm.
Preferably, the bottom gate thin film, source electrode and drain electrode composition material be Ni metal, the composition of the active layer
Material includes one of two-dimentional molybdenum disulfide, tungsten disulfide or two selenizing molybdenums.
Preferably, for the channel length between the source electrode and drain electrode less than 100 μm, the active layer is covered on source electricity
Pole and drain electrode are formed by channel, and are in contact with source electrode and drain electrode.
It can guarantee that flexible thin-film transistor has excellent performance using above-mentioned preferred embodiment.
The present invention also provides a kind of preparation methods of flexible thin-film transistor, include the following steps:
[1] polyimide material is surface-treated, is dried after cleaning, as substrate, and as thin film transistor (TFT)
Insulation gate dielectric layer；
[2] using ink-jet printer, two-sided spray printing contains Pd on polyimide substrate2+、Ag+Or Cu2+Ink, wherein one
Face is whole face spray printing, and another side is patterning spray printing；
[3] spray printing is had containing Pd2+、Ag+Or Cu2+The polyimide substrate of ink is impregnated in containing Cu2+Chemical copper solution
In, copper source electrode, drain electrode and gate electrode are formed, wherein source electrode and drain electrode forms patterned source-drain electrode array；
[4] the source-drain electrode battle array for being obtained the ink jet printing comprising active layer material in step [3] using ink-jet printer
On column, flexible thin-film transistor is obtained after drying.
After the preferred embodiment, in device fabrication process, the production of source electrode and drain electrode does not use traditional light
Carving technology；Without carrying out the cumbersome process such as modifying interface processing and doping to active layer；Source electrode, drain electrode in the present invention simultaneously
With gate electrode can in chemical copper solution disposal molding, form the layers of copper of highly crystalline quality through growing, be without high annealing
It can get high conductivity.It in addition to this, can be directly as inkjet printing by few layer of active layer material of liquid phase removing preparation
Functional ink ingredient, above-mentioned steps enormously simplify the preparation process of flexible thin-film transistor.
The source-drain electrode array for forming catalysis figure through spray printing and being formed after electroless copper plating, each pair of source-drain electrode centre are pre-
A channel is reserved, then whole face forms the grid of polyimide substrate another side.Subsequent active layer is convenient through ink jet printing, fast
It is deposited on source-drain electrode array and in channel promptly, this accurately ensure that the perfectly aligned of grid and channel, improve bottom
The grid-control ability of grid.
The preparation of flexible thin-film transistor is realized by the way of ink jet printing, is had and is precisely controlled, facilitates molding, is fast
Prompt, mass preparation distinguishing feature.
Preferably, polyimide substrate is surface-treated using lye in the step [1], and polyamides is sub- after surface treatment
The polyimide molecule of amido plate surface hydrolyzes to form carboxylate group.
Preferably, in the step [2] inkjet printing contain Pd2+、Ag+Or Cu2+Ink, metal ion and polyamides therein
Carboxylate group in imines substrate forms chemical bonding, and the metal simple-substance that metal ion is formed through reduction is subsequent for being catalyzed
Electroless copper plating.
Preferably, the pattern that spray printing is formed in step [2], the spacing of adjacent lines is less than 100 μm.
Preferably, in step [3], by controlling deposition growing condition, so that the electricity of source electrode, drain electrode and gate electrode
Conductance is greater than 2 × 105S/cm。
Preferably, the preparation of the ink in step [4] comprising active layer material uses liquid phase ultrasound lift-off technology, passes through control
Liquid phase ultrasound condition processed obtains the active layer material with few laminate, and ink is made in the active layer material.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1) technologic simplification: in device fabrication process, the production of source electrode, drain electrode is without using traditional photoetching
Technique, and source electrode, drain electrode and gate electrode primary property can grow through chemical deposition and be formed on substrate, at through high temperature
Reason has excellent electrical property；Without carrying out modifying interface processing to active layer and adulterating cumbersome to improve interface compatibility etc.
Process；In addition to this, by liquid phase removing preparation few layer of active layer material can directly as inkjet printing functional ink at
Point, above-mentioned steps enormously simplify the preparation process of flexible thin-film transistor.
2) cost is greatly lowered: the present invention completely disengages the manufacturing process of conventional transistor, source electrode, drain electrode and grid
Electrode is formed without photoetching, without the silver conductive ink that spray printing involves great expense, and uses catalytic chemistry deposition growing can be primary
Property formed copper electrode；Without spray printing insulating polymeric material to form insulation gate dielectric layer, but polyimide substrate is used to make
For the gate dielectric layer that insulate, manufacturing cost is greatly reduced in this.
3) device electrical performance is excellent: the carboxylic acid that polyimide-based plate surface after surface treated is formed with group with it is subsequent
Metal ion form chemical bonding, the metal copper electrode for facilitating chemical deposition is firmly attached on polyimide substrate；Copper
The work function of metal is 4.65eV, and very close with the electron affinity 4.80eV of few layer of molybdenum disulfide, this makes electrode and has
The contact berrier of active layer is small, and level-density parameter is good；Active layer material ink can adjust (viscosity, surface tension, attachment by characteristic
Property etc.), the channel of continuous uniform is formed on polyimide substrate；It can be facilitated using Digital ink jet printing technology and to be formed and backgate
The grid-control ability of the conducting channel of alignment, backgate is strong.The simplification of the above technical measures and device architecture effectively reduces
For interfacial effect to the adverse effect of device performance, device electrical performance is excellent.
4) active layer material that the present invention uses is two-dimensional layered-structure material, and the gate dielectric material of selection has as substrate
There is good flexibility, and gate electrode, source electrode and drain electrode are firmly attached on polyimide substrate through chemical deposition, therefore
The thin film transistor (TFT) can support the bending of larger angle, and on device performance almost without influence.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is flexible thin-film transistor structural schematic diagram of the invention；
Fig. 2 is the schematic diagram of each step in the manufacturing method of flexible thin-film transistor of the invention；
Fig. 3 is the schematic top plan view of source-drain electrode array and active layer in flexible thin-film transistor of the invention；
Fig. 4 is the performance test figure of the flexible thin-film transistor prepared in the embodiment of the present invention.
Wherein: 1- insulation gate dielectric layer, 2- source electrode, 3- drain electrode, 4- bottom gate thin film, 5- active layer.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
A kind of flexible thin-film transistor successively includes bottom gate thin film 4, insulation gate dielectric layer 1, source-drain electrode battle array from the bottom to top
Column layer and active layer 5, the insulation gate dielectric layer are used as the substrate of flexible thin-film transistor, the source-drain electrode array layer simultaneously
It is made of the array that source electrode 2 and drain electrode 3 form.
As a preferred solution, the composition material of insulation gate dielectric layer 1 is flexible material polyimides, and polyamides is sub-
The thickness of amine film is less than 100 μm.
As a preferred solution, the composition material of the bottom gate thin film 4, source electrode 2 and drain electrode 3 is Ni metal,
The composition material of the active layer 5 includes one of two-dimentional molybdenum disulfide, tungsten disulfide or two selenizing molybdenums.
As a preferred solution, the channel length between the source electrode 2 and drain electrode 3 is described to have less than 100 μm
Active layer 5 is covered on source electrode 2 and drain electrode 3 is formed by channel, and is in contact with source electrode and drain electrode.
The present invention also provides a kind of preparation methods of flexible thin-film transistor, include the following steps:
[1] polyimide material is surface-treated, is dried after cleaning, as substrate, and as thin film transistor (TFT)
Insulation gate dielectric layer；
[2] using ink-jet printer, two-sided spray printing contains Pd on polyimide substrate2+、Ag+Or Cu2+Ink, wherein one
Face is whole face spray printing, and another side is patterning spray printing；
[3] spray printing is had containing Pd2+、Ag+Or Cu2+The polyimide substrate of ink is impregnated in containing Cu2+Chemical copper solution
In, copper source electrode, drain electrode and gate electrode are formed, wherein source electrode and drain electrode forms patterned source-drain electrode array；
[4] the source-drain electrode battle array for being obtained the ink jet printing comprising active layer material in step [3] using ink-jet printer
On column, flexible thin-film transistor is obtained after drying.
As a preferred solution, polyimide substrate is surface-treated using lye in the step [1], surface
The polyimide molecule of polyimide-based plate surface hydrolyzes to form carboxylate group after processing.The detailed process of alkali process is by base
Plate is put into 30-50 DEG C of concentration and impregnates 1-3 hours for the NaOH solution of 4-7M after cleaning up.
As a preferred solution, in the step [2] inkjet printing contain Pd2+、Ag+Or Cu2+Ink, gold therein
Belong to the carboxylate group in ion and polyimide substrate and forms chemical bonding, and the metal simple-substance that metal ion is formed through reduction
For being catalyzed subsequent electroless copper plating.
As a preferred solution, the pattern that spray printing is formed in step [2], the spacing of adjacent lines is less than 100 μm.
As a preferred solution, in step [3], by controlling deposition growing condition, so that source electrode, drain electrode
It is greater than 2 × 10 with the conductivity of gate electrode5S/cm。
As a preferred solution, the preparation of the ink in step [4] comprising active layer material is shelled using liquid phase ultrasound
From technology, by controlling liquid phase ultrasound condition, the active layer material with few laminate is obtained, and by the active layer material
Ink is made in material.
Embodiment
It is as shown in Figure 1 the thin film transistor (TFT) longitudinal sectional drawing of the present embodiment, including using polyimide substrate as substrate
Insulate gate dielectric layer 1；Gate dielectric layer 1 insulate after lye is surface-treated, on it the catalysis seed layer of inkjet print image,
And the source electrode 2 and drain electrode 3 as thin film transistor (TFT) are grown through chemical deposition；It is with two-dimentional material on source electrode, drain electrode
Expect active layer 5 of the molybdenum disulfide as channel material；What it is positioned at 1 back of gate dielectric layer is with source electrode, drain electrode simultaneously through changing
Learn the bottom gate thin film that deposition obtains.
The production method for being illustrated in figure 2 flexible thin-film transistor in the present embodiment, comprising the following steps:
1) polyimide substrate is surface-treated: by Kapton (TS-Dupont it) cuts
Clean at the square of 50mm × 50mm and successively using deionized water, ethyl alcohol spare.Substrate is put into configured 4M's
It is impregnated 1 hour in NaOH solution, temperature setting is 30 DEG C.Polyimides is under the action of highly basic during being somebody's turn to do, imide ring hair
Raw fracture, substrate surface hydrolyze to form polyamic acid salt.
2) spray printing is catalyzed seed layer on substrate: substrate after surface treated after deionized water repeated flushing using drying
It is dry.Wherein one side using ink-jet printer in polyimide substrate prints Ag+Ink forms catalysis seed layer, and print area is
50mm × 50mm (i.e. whole face substrate is completely covered in print area), after 50 DEG C of drying, using ink-jet printer polyimide-based
The other one side printing Ag of plate+Ink forms patterned catalysis seed layer, wherein the lines of pre-formed source electrode and drain electrode
Spacing is less than 100 μm.Ag+Spray printing in polyimide-based plate surface, with substrate surface can reaction active groups-COO-In conjunction with.
3) the chemical deposition growth of source electrode, drain electrode and gate electrode: the polyamides that surface is covered with catalysis seed layer is sub-
Amido plate is placed in chemical bronze plating liquid, and copper metal chemistry deposition growing is disposable to form source electricity in the two sides of polyimide substrate
Pole, drain electrode and gate electrode, after wherein source electrode and drain electrode forms in the catalysis seed layer of preparatory spray printing, electrode spacing is small
In 100 μm (as shown in Figure 3).Control chemical deposition condition makes layers of copper conductivity be greater than 2 × 105S/cm.Typical chemistry is heavy
Copper liquid formula is as shown in table 1, and 40 DEG C of depositing temperature, sedimentation time 20 minutes.
1 electroless copper plating formula of liquid of table
4) ink jet printing of active layer and transistor device are formed: liquid phase ultrasound stripping method are used, by powdery molybdenum disulfide
It is placed in dehydrated alcohol-deionized water of volume ratio 1:1, polyvinylpyrrolidone is added as dispersing agent and stabilizer, 25 DEG C
Liquid phase ultrasound 24 hours obtains the suspension containing few layer molybdenum disulfide nano sheet.Molybdenum disulfide suspension is configured to ink,
By the ink jet printable in forming active layer on source-drain electrode array.It is put into 50 DEG C of baking ovens and dries after the completion of device preparation.
Thin film transistor (TFT) manufactured in the present embodiment, electric performance test result as shown in figure 4, its subthreshold swing (SS) down to
65mV/dec (close to theoretical value 60mV/dec at room temperature), switching current ratio (Ion/Ioff) up to 104；As source-drain voltage VDS=
3.0V, gate voltage VGSWhen=3.0V, on-state current reaches 20 μ A；When source-drain voltage is increased to 3.0V from 2.0V, threshold value is roll-offed low
To 0.2V.In addition, the flexibility of two-dimensional layer material molybdenum disulfide is good, prepared flexible thin-film transistor is bent through wide-angle
Excellent performance can be still kept afterwards.Property of the performance of the thin film transistor (TFT) better than flexible thin-film transistor prepared by the prior art
Energy.
The specific embodiment of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to the application protection scope therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, under the premise of not departing from technical scheme design, various modifications and improvements can be made, these belong to this
The protection scope of application.
Claims (10)
1. a kind of flexible thin-film transistor, it is characterised in that: from the bottom to top successively include bottom gate thin film (4), insulation gate dielectric layer
(1), source-drain electrode array layer and active layer (5), the insulation gate dielectric layer are used as the substrate of flexible thin-film transistor, institute simultaneously
Source-drain electrode array layer is stated to be made of the array that source electrode (2) and drain electrode (3) form.
2. a kind of flexible thin-film transistor described in accordance with the claim 1, it is characterised in that: insulation gate dielectric layer (1)
Composition material is flexible material polyimides, and the thickness of Kapton is less than 100 μm.
3. a kind of flexible thin-film transistor described in accordance with the claim 1, it is characterised in that: the bottom gate thin film (4), source electrode
(2) and the composition material of drain electrode (3) is Ni metal, and the composition material of the active layer (5) includes two-dimentional molybdenum disulfide, two sulphur
Change one of tungsten or two selenizing molybdenums.
4. a kind of flexible thin-film transistor described in accordance with the claim 1, it is characterised in that: the source electrode (2) and drain electrode
(3) channel length between is less than 100 μm, and the active layer (5) is covered on source electrode (2) and drain electrode (3) is formed by ditch
On road, and it is in contact with source electrode and drain electrode.
5. a kind of preparation method of flexible thin-film transistor described in claim 1, which comprises the steps of:
[1] Kapton is surface-treated, is dried after cleaning, as substrate, and as the exhausted of thin film transistor (TFT)
Edge gate dielectric layer；
[2] using ink-jet printer, two-sided spray printing contains Pd on polyimide substrate2+、Ag+Or Cu2+Ink, wherein being on one side
Whole face spray printing, another side are patterning spray printing；
[3] spray printing is had containing Pd2+、Ag+Or Cu2+The polyimide substrate of ink is impregnated in containing Cu2+Chemical copper solution in, formed
Copper source electrode, drain electrode and gate electrode, wherein source electrode and drain electrode forms patterned source-drain electrode array；
[4] utilize ink-jet printer by the ink jet printing comprising active layer material on the source-drain electrode array that step [3] obtains,
Flexible thin-film transistor is obtained after drying.
6. a kind of preparation method of flexible thin-film transistor according to claim 5, it is characterised in that: the step [1]
Middle polyimide substrate is surface-treated using lye, the polyimide molecule water of polyimide-based plate surface after surface treatment
Solution forms carboxylate group.
7. a kind of preparation method of flexible thin-film transistor according to claim 5, it is characterised in that: the step [2]
Middle inkjet printing contains Pd2+、Ag+Or Cu2+Ink, metal ion therein are formed with the carboxylate group in polyimide substrate
Chemical bonding, and the metal simple-substance that metal ion is formed through reduction is for being catalyzed subsequent electroless copper plating.
8. a kind of preparation method of flexible thin-film transistor according to claim 5, it is characterised in that: spray in step [2]
Impression at pattern, the spacing of adjacent lines is less than 100 μm.
9. a kind of preparation method of flexible thin-film transistor according to claim 5, it is characterised in that: in step [3],
By controlling deposition growing condition, so that the conductivity of source electrode, drain electrode and gate electrode is greater than 2 × 105S/cm。
10. a kind of preparation method of flexible thin-film transistor according to claim 5, it is characterised in that: packet in step [4]
The preparation of ink containing active layer material uses liquid phase ultrasound lift-off technology, and by controlling liquid phase ultrasound condition, obtaining has less
The active layer material of laminate, and ink is made in the active layer material.
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