CN110504003A - The method of ATE quick obtaining out of memory address - Google Patents
The method of ATE quick obtaining out of memory address Download PDFInfo
- Publication number
- CN110504003A CN110504003A CN201910788133.2A CN201910788133A CN110504003A CN 110504003 A CN110504003 A CN 110504003A CN 201910788133 A CN201910788133 A CN 201910788133A CN 110504003 A CN110504003 A CN 110504003A
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- China
- Prior art keywords
- address
- pin state
- ram
- pin
- invalidation period
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C29/56012—Timing aspects, clock generation, synchronisation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C2029/5606—Error catch memory
Abstract
The invention discloses a kind of methods of ATE quick obtaining out of memory address, when scanning entire fail bit crawl RAM, no longer read since initial address, but first invalidation period is first read from vector RAM, obtain the address pin state of invalidation period direction, construction is with the corresponding relationship of the address pin state of character representation and the pin state indicated with numerical value, then the corresponding address pin state of first invalidation period is converted into 16 system row address and column address, using the row address and column address as the initial address for scanning entire fail bit crawl RAM.The present invention can hardware resource present in reasonable employment ATE, the method that optimization obtains fail address reduces the testing time.
Description
Technical field
The present invention relates to semiconductor integrated circuit ATE (automatic test equipment) memory test fields, more particularly to one
The method of kind ATE quick obtaining out of memory address.
Background technique
Memory construction is simple, symmetrically, during the test, obtains out of memory address, test program is debugged,
And failure analysis is carried out to memory, there is vital effect.
ATE by ALPG (algorithm pattern generation algorithm model generator) mode to memory into
Row test, the principle of test are shown in Fig. 1: by the way that storage address, memory data is pressed after calculating according to certain algorithm
Chip is given to according to the state that certain corresponding relationship is converted to memory address and data pin to be tested, it then will be after test
In the storage to ram region identical with storage address of/fail result.In Fig. 1, grid part indicates fail bit crawl
Random memory unit, X indicate that memory row address, Y indicate memory column address, and 1 indicates fail address.
Fig. 2 is the method flow diagram that tradition obtains out of memory address: by reading monolith ram region, being lost reading
It records the address of effect.
The method that tradition obtains out of memory address, advantage are simply that algorithm, which is realized, to be easy, and disadvantage is it is also obvious that such as
Fruit fail address is seldom, in order to find fail address, needs to read monolith RAM from the beginning to the end, in the very big feelings of memory capacity
Under condition, it will increase many additional testing times.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of methods of ATE quick obtaining out of memory address, can
Hardware resource present in reasonable employment ATE, the method that optimization obtains fail address reduce the testing time.
In order to solve the above technical problems, the method for ATE quick obtaining out of memory address of the invention is using as follows
What technical solution was realized:
When scanning entire fail bit crawl RAM, first invalidation period is first read from vector RAM, obtains failure week
The address pin state that phase is directed toward, construction are corresponding with the pin state that is indicated with numerical value with the address pin state of character representation
Then the corresponding address pin state of first invalidation period is converted into 16 system row address and column address, by the row by relationship
Address and column address are as the initial address for scanning entire fail bit crawl RAM.
High-end ATE (for example T2000, V93K) usually has vector RAM, can will be stored by/fail message according to the period
In the Random Vector storage unit, by reading vector RAM, the invalidation period of starting can be quickly and easily read.
The innovative point of the method for the present invention is: sufficiently combining vector RAM and fail bit crawl RAM obtains the excellent of fail message
Gesture, a kind of method for developing energy quick obtaining out of memory address.Compared to original method, entire fail bit crawl is scanned
It when RAM, is no longer read since initial address, but first reads first invalidation period from vector RAM, it in this way can reasonable employment
Hardware resource present in ATE reduces the testing time, effectively improves the efficiency that ATE obtains out of memory address.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the schematic illustration that ATE is tested using ALPG mode;
Fig. 2 is the flow chart that ATE usually obtains out of memory address;
Fig. 3 is the method flow diagram of the ATE quick obtaining out of memory address.
Specific embodiment
As shown in connection with fig. 3, the method for the ATE quick obtaining out of memory address in the following embodiments, specifically
The mode of realization is as follows:
Step 1, by fail message according to storage address where it, be stored in fail bit crawl RAM (random storage list
Member) in identical address;By fail message, according to invalidation period, there are in vector RAM (random memory unit).
Step 2 reads first invalidation period from vector RAM.
Step 3 obtains the corresponding storage address pin state of first invalidation period.
Step 4, construction are with the corresponding relationship of the address pin state of character representation and the pin state indicated with numerical value.
The data structure corresponding relationship of the pin state of construction see the table below 1
Table 1
Step 5, by the corresponding address pin state of first invalidation period by character type be converted into numeric type output (two into
System output).
The corresponding address pin numeric type (binary system) of first invalidation period is converted to hexadecimal by step 6, including
Memory lines initial address Xinitial, memory column initial address Yinitial.
Step 7, setting fail bit grab the address range that RAM is read: X=X=Xinitial~Xmax, Y=
Yinitial~Ymax.
Step 8 reads fail bit crawl address ram X=X+1, Y=Y+1.
If step 9 is not 0, record current address is fail address.
If step 10, X < Xmax Y < Ymax, return step 7.
The read access time of two methods is calculated for reading the fail address 64M SRAM:
64M SRAM address range is A0-A19, in total 64 IO, if the last one address of most extreme situation
0xFFFFF is failed:
The use of the time that existing method obtains fail address is (assuming that reading the primary time is 200ns):
One IO need time 2^20x200=1048576ns=~1.049ms, 64 IO need 64x1.049=~
67ms。
If obtaining fail address with method of the invention:
-- the fail address corresponding period is first obtained, needing the time is 2^20x200=~1.049ms.
-- the corresponding fail address 0xFFFFF of the invalidation period is obtained, needing the time is 64x200ns=12.8 μ s, substantially
It can ignore.
-- only needing to read once find the fail address time is 200ns, can be ignored substantially.
It is 1/64 times of existing method the time required to the result present invention of estimation.
Above by specific embodiment, invention is explained in detail, but these are not constituted to of the invention
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of method of ATE quick obtaining out of memory address, which is characterized in that when scanning entire fail bit crawl RAM,
First invalidation period is first read from vector RAM, obtains the address pin state of invalidation period direction, is constructed with character list
The corresponding relationship of the address pin state shown and the pin state indicated with numerical value, then correspondingly by first invalidation period
Location pin state is converted into 16 system row address and column address, grabs using the row address and column address as entire fail bit is scanned
The initial address of RAM.
2. the method as described in claim 1, it is characterised in that: the construction is with the address pin state of character representation and with number
It is worth the corresponding relationship of the pin state indicated, with the following method: setting n-th address pin as An, character style pin shape
State is ' 0 ', and binary form pin state is 0;Character style pin state is ' 1 ', and binary form pin state is 1,
Middle n is the integer more than or equal to 0.
3. a kind of method of ATE quick obtaining out of memory address, which comprises the steps of:
Step 1, by fail message according to storage address where it, be stored in the identical address in fail bit crawl RAM;It will
There are in vector RAM according to invalidation period for fail message;
Step 2 reads first invalidation period from vector RAM;
Step 3 obtains the corresponding storage address pin state of first invalidation period;
Step 4, construction are with the corresponding relationship of the address pin state of character representation and the pin state indicated with numerical value;
The corresponding address pin state of first invalidation period is converted into numeric type output by character type by step 5;
The corresponding address pin numeric type of first invalidation period is converted to hexadecimal by step 6, including memory lines are initial
Address Xinitial, memory column initial address Yinitial;
The address range that step 7, setting fail bit crawl RAM are read: X=X=Xinitial~Xmax, Y=Yinitial~
Ymax;Wherein, Xmax indicates row address maximum value, and Ymax indicates column address maximum value;
Step 8 reads fail bit crawl address ram X=X+1, Y=Y+1;
If step 9 is not 0, record current address is fail address;
If step 10, X < Xmax Y < Ymax, return step 7.
4. method as claimed in claim 3, it is characterised in that: construction is described in step 4 with the address pin state of character representation
With the corresponding relationship of the pin state indicated with numerical value, with the following method: setting n-th address pin as An, character style
Pin state is ' 0 ', and binary form pin state is 0;Character style pin state is ' 1 ', binary form pin state
It is 1, wherein n is the integer more than or equal to 0.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112927751A (en) * | 2021-03-22 | 2021-06-08 | 西安紫光国芯半导体有限公司 | Method for outputting memory failure address and related equipment |
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CN103487744A (en) * | 2013-05-07 | 2014-01-01 | 上海华力微电子有限公司 | Dynamic EMMI system, implementing method of dynamic EMMI system and application method of dynamic EMMI system |
CN106771982A (en) * | 2017-01-20 | 2017-05-31 | 珠海全志科技股份有限公司 | Chip automatic test approach and system |
CN109524055A (en) * | 2018-12-24 | 2019-03-26 | 上海华力集成电路制造有限公司 | Method and test macro based on SOC ATE positioning memory fail bit |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11306793A (en) * | 1998-04-27 | 1999-11-05 | Advantest Corp | Method and apparatus for analysis of defect |
JP2002197892A (en) * | 2000-12-27 | 2002-07-12 | Hitachi Ltd | Test method for semiconductor device |
US7042242B2 (en) * | 2004-05-25 | 2006-05-09 | Lsi Logic Corporation | Built-in self test technique for programmable impedance drivers for RapidChip and ASIC drivers |
CN101458968A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method and device for obtaining disabled binary digit distribution information in non-volatile memory |
CN103487744A (en) * | 2013-05-07 | 2014-01-01 | 上海华力微电子有限公司 | Dynamic EMMI system, implementing method of dynamic EMMI system and application method of dynamic EMMI system |
CN106771982A (en) * | 2017-01-20 | 2017-05-31 | 珠海全志科技股份有限公司 | Chip automatic test approach and system |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112927751A (en) * | 2021-03-22 | 2021-06-08 | 西安紫光国芯半导体有限公司 | Method for outputting memory failure address and related equipment |
CN112927751B (en) * | 2021-03-22 | 2023-09-29 | 西安紫光国芯半导体有限公司 | Output method of memory failure address and related equipment |
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Application publication date: 20191126 |