CN110502960A - 显示基板、指纹识别面板、指纹识别方法及显示装置 - Google Patents
显示基板、指纹识别面板、指纹识别方法及显示装置 Download PDFInfo
- Publication number
- CN110502960A CN110502960A CN201810476374.9A CN201810476374A CN110502960A CN 110502960 A CN110502960 A CN 110502960A CN 201810476374 A CN201810476374 A CN 201810476374A CN 110502960 A CN110502960 A CN 110502960A
- Authority
- CN
- China
- Prior art keywords
- base plate
- display base
- metallic pattern
- fingerprint recognition
- fingerprint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000010408 film Substances 0.000 claims description 43
- 230000005540 biological transmission Effects 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 68
- 230000000694 effects Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000011514 reflex Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Multimedia (AREA)
- Human Computer Interaction (AREA)
- Ceramic Engineering (AREA)
- Image Input (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供了一种显示基板、指纹识别面板、指纹识别方法及显示装置,属于显示技术领域。其中,显示基板,包括位于衬底基板上、异层设置的第一金属图形和第二金属图形,且所述第一金属图形在所述衬底基板上的正投影与所述第二金属图形在所述衬底基板上的正投影至少部分重叠。本发明的技术方案能够提高显示基板的透过率,进而提高指纹识别的精度。
Description
技术领域
本发明涉及显示技术领域,特别是指一种显示基板、指纹识别面板、指纹识别方法及显示装置。
背景技术
现有的指纹识别面板包括显示基板和指纹识别模组,其中,手指指纹将照射到指纹上的光进行反射,反射的光线透过显示基板被指纹识别模组接收,指纹识别模组根据接收到的光线识别指纹。
现有显示基板上存在许多金属图形,由于金属图形不透光,会对光线进行遮挡,导致显示基板的透过率较低,在显示基板应用于指纹识别中时,指纹的谷脊反光信息会损失比较多,进而影响指纹识别的精度。
发明内容
本发明要解决的技术问题是提供一种显示基板、指纹识别面板、指纹识别方法及显示装置,能够提高显示基板的透过率,进而提高指纹识别的精度。
为解决上述技术问题,本发明的实施例提供技术方案如下:
一方面,提供一种显示基板,包括位于衬底基板上、异层设置的第一金属图形和第二金属图形,且所述第一金属图形在所述衬底基板上的正投影与所述第二金属图形在所述衬底基板上的正投影至少部分重叠。
进一步地,所述第一金属图形和所述第二金属图形的延伸方向相同。
进一步地,所述第一金属图形和所述第二金属图形均沿行方向延伸;或
所述第一金属图形和所述第二金属图形均沿列方向延伸。
进一步地,所述第一金属图形在所述衬底基板上的正投影落入所述第二金属图形在所述衬底基板上的正投影内。
进一步地,所述第一金属图形为VDD信号线,所述第二金属图形为数据线;或
所述第二金属图形为VDD信号线,所述第一金属图形为数据线。
进一步地,所述显示基板为OLED显示基板,所述OLED显示基板具体包括:
位于衬底基板上的薄膜晶体管和数据线,所述薄膜晶体管的源电极与所述数据线连接;
覆盖所述薄膜晶体管和所述数据线的钝化层;
位于所述钝化层上的VDD数据线和导电连接线,所述导电连接线通过贯穿所述钝化层的过孔与所述薄膜晶体管的漏电极连接;
覆盖所述VDD数据线和导电连接线的平坦层;
位于所述平坦层上的阳极,所述阳极通过贯穿所述平坦层的过孔与所述导电连接线连接;
位于所述阳极上的像素界定层;
位于所述像素界定层限定区域内的有机发光层;
位于所述有机发光层上的阴极。
进一步地,所述导电连接线与所述VDD数据线采用相同材料。
进一步地,所述显示基板包括多个透光区域,每一所述透光区域在所述衬底基板上的正投影与所述显示基板的金属图形在所述衬底基板上的正投影不重合,单位面积内的所述透光区域的数量相同,且排布方式相同。
本发明实施例还提供了一种指纹识别面板,包括如上所述的显示基板和设置在所述显示基板非显示侧的指纹识别模组。
进一步地,所述指纹识别模组包括准直膜和感光传感器,所述准直膜用以透过指纹反射的准直光并遮挡散射光,所述感光传感器用以接收所述准直膜透过的准直光并根据所述准直光识别指纹。
进一步地,在所述显示基板为柔性显示基板时,所述准直膜复用为所述显示基板的衬底基板。
本发明实施例还提供了一种指纹识别方法,应用于如上所述的指纹识别面板,所述指纹识别方法包括:
手指指纹将照射到指纹上的光进行反射,反射光经显示基板传播至指纹识别模组;
指纹识别模组根据接收到的光线识别指纹。
进一步地,在所述显示基板包括多个透光区域,每一所述透光区域在所述衬底基板上的正投影与所述显示基板的金属图形在所述衬底基板上的正投影不重合,所述指纹识别模组包括准直膜和感光传感器时,所述指纹识别方法具体包括:
手指指纹将照射到指纹上的光进行反射,反射光经所述透光区域传播至所述准直膜;
所述准直膜透过反射光中的准直光,并遮挡反射光中的散射光;
所述感光传感器接收所述准直光,并根据所述准直光识别指纹。
本发明实施例还提供了一种显示装置,包括如上所述的指纹识别面板。
本发明的实施例具有以下有益效果:
上述方案中,将第一金属图形和第二金属图形设计在不同层,且第一金属图形在衬底基板上的正投影与第二金属图形在衬底基板上的正投影至少部分重叠,即第一金属图形和第二金属图形两者为堆叠结构,经过流片实验后,采用该种结构不会对显示造成任何影响,同时还提高了显示基板的透过率,在显示基板应用在指纹识别面板中时,能够使得指纹识别模组接收的光强度更大,进而提高指纹识别的精度,增加了指纹识别的图像清晰度。
附图说明
图1为现有OLED显示基板的示意图;
图2为本发明实施例OLED显示基板的示意图;
图3为本发明实施例指纹识别面板的示意图;
图4和图5为现有技术透光区域不均匀分布的示意图;
图6和图7为本发明实施例透光区域均匀分布的示意图。
附图标记
1 衬底基板
2 第一栅绝缘层
3 第二栅绝缘层
4 层间绝缘层
5 平坦层
6 像素界定层
7 阴极
8 薄膜封装层
9 隔垫物
10 有源层
11 栅电极
12 源电极
13 漏电极
14 阳极
15 有机发光层
16 VDD信号线
17 钝化层
18 导电连接线
19 柔性基底
20 感光传感器
21 准直膜
22 遮光挡墙
23 OLED显示模组
24 透光区域
S 收光角范围
具体实施方式
为使本发明的实施例要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。
如图1所示,现有的OLED显示基板包括衬底基板1、层间绝缘层4、平坦层5、像素界定层6、薄膜封装层8、隔垫物9、薄膜晶体管和发光单元,薄膜晶体管包括栅电极11、第一栅绝缘层2、第二栅绝缘层3、有源层10、源电极12和漏电极13,发光单元包括阳极14、有机发光层15和阴极7,OLED显示基板还包括与源电极12、漏电极13和数据线同层同材料设置的VDD信号线16,数据线和VDD信号线16一般采用金属制成,不透光,会对光线进行遮挡,导致OLED显示基板的透过率较低。
在OLED显示基板应用于指纹识别中时,指纹谷脊反射的光信息经过OLED显示基板到达指纹识别模组,如果OLED显示基板的透过率较低,指纹的谷脊反光信息会损失比较多,将影响指纹识别的精度和指纹成像的清晰度。
为了解决上述问题,本发明的实施例提供一种显示基板、指纹识别面板、指纹识别方法及显示装置,能够提高显示基板的透过率,进而提高指纹识别的精度。
本发明实施例提供一种显示基板,包括位于衬底基板上、异层设置的第一金属图形和第二金属图形,且所述第一金属图形在所述衬底基板上的正投影与所述第二金属图形在所述衬底基板上的正投影至少部分重叠。
本实施例中,将第一金属图形和第二金属图形设计在不同层,且第一金属图形在衬底基板上的正投影与第二金属图形在衬底基板上的正投影至少部分重叠,即第一金属图形和第二金属图形两者为堆叠结构,经过流片实验后,采用该种结构不会对显示造成任何影响,同时还提高了显示基板的透过率,在显示基板应用在指纹识别面板中时,能够使得指纹识别模组接收的光强度更大,进而提高指纹识别的精度,增加了指纹识别的图像清晰度。
进一步地,第一金属图形和第二金属图形的延伸方向相同。具体地,进一步地,所述第一金属图形和所述第二金属图形可以均沿行方向延伸;或所述第一金属图形和所述第二金属图形可以均沿列方向延伸。
优选地,所述第一金属图形在所述衬底基板上的正投影落入所述第二金属图形在所述衬底基板上的正投影内,这样能够最大限度地降低第一金属图形和第二金属图形对光线的遮挡,进一步提高显示基板的透过率。
具体地,所述第一金属图形为VDD信号线,所述第二金属图形为数据线;或所述第二金属图形为VDD信号线,所述第一金属图形为数据线。在现有技术中,VDD信号线和数据线位于同一层,VDD信号线和数据线相互平行,这样VDD信号线和数据线遮挡的光线比较多,导致显示基板的透过率仅为2.5%,在经过本实施例的设计后,能够将显示基板的透过率提升到3.6%,大大增加了指纹识别的图像清晰度。
进一步地,所述显示基板为OLED显示基板,所述OLED显示基板具体包括:
位于衬底基板上的薄膜晶体管和数据线,所述薄膜晶体管的源电极与所述数据线连接;
覆盖所述薄膜晶体管和所述数据线的钝化层,其中,钝化层完全覆盖所述薄膜晶体管和所述数据线,钝化层包括有暴露出所述薄膜晶体管的漏电极的过孔;
位于所述钝化层上的VDD数据线和导电连接线,所述导电连接线通过贯穿所述钝化层的过孔与所述薄膜晶体管的漏电极连接;
覆盖所述VDD数据线和导电连接线的平坦层,其中,平坦层完全覆盖所述VDD数据线和导电连接线;
位于所述平坦层上的阳极,所述阳极通过贯穿所述平坦层的过孔与所述导电连接线连接;
位于所述阳极上的像素界定层;
位于所述像素界定层限定区域内的有机发光层;
位于所述有机发光层上的阴极。
一具体实施例中,如图2所示,本实施例的OLED显示基板包括衬底基板1、层间绝缘层4、平坦层5、像素界定层6、薄膜封装层8、隔垫物9、薄膜晶体管和发光单元,薄膜晶体管包括栅电极11、第一栅绝缘层2、第二栅绝缘层3、有源层10、源电极12和漏电极13,发光单元包括阳极14、有机发光层15和阴极7,OLED显示基板还包括VDD信号线16,与现有技术不同,VDD信号线16与源电极12、漏电极13和数据线(未图示)位于不同层,VDD信号线16与数据线延伸方向相同,且VDD信号线16在衬底基板1的正投影和数据线在衬底基板1上的正投影至少部分重合,即VDD信号线16和数据线两者为堆叠结构,经过流片实验后,采用该种结构不会对显示造成任何影响,同时还提高了OLED显示基板的透过率,这样在OLED显示基板应用在指纹识别面板中时,能够使得指纹识别模组接收的光强度更大,进而提高指纹识别的精度,增加了指纹识别的图像清晰度。
优选地,VDD信号线16在衬底基板1的正投影落入数据线在衬底基板1上的正投影内,或者数据线在衬底基板1的正投影落入VDD信号线16在衬底基板1上的正投影内,这样能够最大限度地提高OLED显示基板的透过率。
为了保证VDD信号线16与源电极12、漏电极13和数据线绝缘,在VDD信号线16与源电极12、漏电极13和数据线之间还设置有钝化层17,由于钝化层17导致漏电极13不能与阳极14连接,因此还需要设置导电连接线18,导电连接线18分别与漏电极13和阳极14连接,实现漏电极13和阳极14的电连接。
优选地,导电连接线18与VDD数据线16采用相同材料制作,这样可以通过同一次构图工艺同时形成导电连接线18和VDD数据线16,能够减少显示基板的构图次数,降低显示基板的成本。
指纹反射的光线主要通过显示基板的透光区域照射到指纹识别模组上,每一透光区域在所述衬底基板上的正投影与所述显示基板的金属图形在所述衬底基板上的正投影不重合,如图3所示,指纹识别模组包括准直膜21和感光传感器20,指纹识别模组还包括柔性基底19,感光传感器20阵列排布在柔性基底19上。指纹的谷脊反射的光信息经过显示基板后到达指纹识别模组时,光信息因为光程原因,已经成为混光信息,因此需要利用准直膜21滤除其中的杂散光,直接准直最上方的谷脊发射的光信息,最终指纹的谷脊的光学强度信息,照射到感光传感器20上,感光传感器20感受到不同光强信息经过后期的电路和数据、图像处理,采集到指纹的信息。
准直膜21包括多个平行排布的遮光挡墙22,以及填充于相邻遮光挡墙22之间的透明基材层。其中,可以采用黑矩阵材料或者其他黑色不透光的树脂材料等制作遮光挡墙22,同时采用透明的材料,如隔垫物采用的树脂作为透明基材层填充在遮光挡墙22之间。在准直膜21与显示基板的贴合过程中,准直膜21会受到压力作用,如果相邻遮光挡墙22之间不填充透明基材层,在受到压力作用后,遮光挡墙22会出现倾倒现象,导致准直膜21的透光率降低,准直效果欠佳,因此,需要在相邻遮光挡墙22之间填充透明基材层,可以降低遮光挡墙22倾倒的风险,保证指纹识别的效果。优选地,透明基材层的高度大于等于遮光挡墙22的高度,这样能够完全避免遮光挡墙22倾倒的风险,保证指纹识别的效果。
为了保证准直效果,相邻遮光挡墙22之间的距离d与遮光挡墙22的高度h之间的比可以设计为1/10~~~1/7。
如图3所示,准直膜21的收光角范围为S,即范围S内的光线可以通过准直膜21到达感光传感器20,理想情况下,范围S对应的显示基板的透光区域的分布是均匀的,如此,经过每个收光角范围S内的光的能量是相同的,这样对准直膜与显示基板可以不进行对位处理。如图4和图5所示,如果显示基板上的透光区域24分布不均匀,会导致显示基板的透过率分布不均匀,在指纹识别模组与显示基板的不同位置对准时,接收的光线强度将不同,在指纹识别模组与显示基板对准时的位置如图5所示时,接收到的光线强度将明显大于指纹识别模组与显示基板对准时的位置如图4所示时接收到的光线强度,因此,在显示基板上的透光区域24分布不均匀时,为了保证指纹成像的效果,需要将显示基板上透过率最大的位置与指纹识别模组接收光线的通光中心位置对齐,将会大大增加指纹识别面板的制作难度。
经过计算,若显示基板上的透光区域24分布不均匀,对准直膜和显示基板不进行对位,通过率最大位置和最小位置的光的能量相差10%左右,如此大大提高了指纹识别的难度。
而本实施例中,由于第一金属图形和第二金属图形采用堆叠的结构,因此,可以空出更多的区域来布局透光区域,使得透光区域在显示基板上均匀分布,其中,均匀分布是指单位面积内透光区域的数量相同且排布方式相同。如图6和图7所示,在透光区域24在显示基板上均匀分布时,不论指纹识别模组与显示基板对准时的位置是如图6所示,还是如图7所示,均可以保证指纹识别模组接收到的光线强度基本相同,这样可以避免对位的问题,降低指纹识别面板的制作难度,提高指纹识别面板的产能,降低指纹识别面板的成本。
本发明实施例还提供了一种指纹识别面板,包括如上所述的显示基板和设置在所述显示基板非显示侧的指纹识别模组。
本实施例中,将第一金属图形和第二金属图形设计在不同层,且第一金属图形在衬底基板上的正投影与第二金属图形在衬底基板上的正投影至少部分重叠,即第一金属图形和第二金属图形两者为堆叠结构,经过流片实验后,采用该种结构不会对显示造成任何影响,同时还提高了显示基板的透过率,在显示基板应用在指纹识别面板中时,能够使得指纹识别模组接收的光强度更大,进而提高指纹识别的精度,增加了指纹识别的图像清晰度。
进一步地,所述指纹识别模组包括准直膜和感光传感器,所述准直膜用以透过指纹反射的准直光并遮挡散射光,所述感光传感器用以接收所述准直膜透过的准直光并根据所述准直光识别指纹。
一具体实施例中,如图3所示,指纹识别面板包括OLED显示模组23和指纹识别模组,指纹识别模组包括准直膜21和感光传感器20,指纹识别模组还包括柔性基底19,感光传感器20阵列排布在柔性基底19上。指纹的谷脊反射的光信息经过显示基板后到达指纹识别模组时,光信息因为光程原因,已经成为混光信息,因此需要利用准直膜21滤除其中的杂散光,直接准直最上方的谷脊发射的光信息,最终指纹的谷脊的光学强度信息,照射到感光传感器20上,感光传感器20感受到不同光强信息经过后期的电路和数据、图像处理,采集到指纹的信息。
准直膜21包括多个平行排布的遮光挡墙22,以及填充于相邻遮光挡墙22之间的透明基材层。其中,可以采用黑矩阵材料或者其他黑色不透光的树脂材料等制作遮光挡墙22,同时采用透明的材料,如隔垫物采用的树脂作为透明基材层填充在遮光挡墙22之间。在准直膜21与显示基板的贴合过程中,准直膜21会受到压力作用,如果相邻遮光挡墙22之间不填充透明基材层,在受到压力作用后,遮光挡墙22会出现倾倒现象,导致准直膜21的透光率降低,准直效果欠佳,因此,需要在相邻遮光挡墙22之间填充透明基材层,可以降低遮光挡墙22倾倒的风险,保证指纹识别的效果。优选地,透明基材层的高度大于等于遮光挡墙22的高度,这样能够完全避免遮光挡墙22倾倒的风险,保证指纹识别的效果。
为了保证准直效果,相邻遮光挡墙22之间的距离d与遮光挡墙22的高度h之间的比可以设计为1/10~~~1/7。
进一步地,在所述显示基板为柔性显示基板时,所述准直膜复用为所述显示基板的衬底基板,准直膜既可以起到支撑作用,保证柔性显示基板不出现收缩,又可以降低指纹识别面板的厚度,从而降低指纹谷脊反射的光程,使得谷脊发射的光信息损失最小化,感光传感器接收的光强度更大,进而提高指纹识别的精度。
本发明实施例还提供了一种指纹识别方法,应用于如上所述的指纹识别面板,所述指纹识别方法包括:
手指指纹将照射到指纹上的光进行反射,反射光经显示基板传播至指纹识别模组;
指纹识别模组根据接收到的光线识别指纹。
本实施例中,将第一金属图形和第二金属图形设计在不同层,且第一金属图形在衬底基板上的正投影与第二金属图形在衬底基板上的正投影至少部分重叠,即第一金属图形和第二金属图形两者为堆叠结构,经过流片实验后,采用该种结构不会对显示造成任何影响,同时还提高了显示基板的透过率,在显示基板应用在指纹识别面板中时,能够使得指纹识别模组接收的光强度更大,进而提高指纹识别的精度,增加了指纹识别的图像清晰度。
进一步地,在所述显示基板包括多个透光区域,每一所述透光区域在所述衬底基板上的正投影与所述显示基板的金属图形在所述衬底基板上的正投影不重合,所述指纹识别模组包括准直膜和感光传感器时,所述指纹识别方法具体包括:
手指指纹将照射到指纹上的光进行反射,反射光经所述透光区域传播至所述准直膜;
所述准直膜透过反射光中的准直光,并遮挡反射光中的散射光;
所述感光传感器接收所述准直光,并根据所述准直光识别指纹。
指纹反射的光线主要通过透光区域照射到指纹识别模组上,如果透光区域分布不均匀,会导致显示基板的透过率分布不均匀,影响指纹成像的效果,需要将显示基板透过率最大的位置与指纹识别模组接收光线的通光中心位置对齐,将会大大增加指纹识别面板的制作难度,本实施例中,多个透光区域在所述显示基板上均匀分布,使得显示基板的透过率分布均匀,可以避免对位的问题,降低指纹识别面板的制作难度,提高指纹识别面板的产能,降低指纹识别面板的成本。
本发明实施例还提供了一种显示装置,包括如上所述的指纹识别面板。所述显示装置可以为:电视、显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件,其中,所述显示装置还包括柔性电路板、印刷电路板和背板。
除非另外定义,本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明所述原理的前提下,还可以作出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (14)
1.一种显示基板,其特征在于,包括位于衬底基板上、异层设置的第一金属图形和第二金属图形,且所述第一金属图形在所述衬底基板上的正投影与所述第二金属图形在所述衬底基板上的正投影至少部分重叠。
2.根据权利要求1所述的显示基板,其特征在于,
所述第一金属图形和所述第二金属图形的延伸方向相同。
3.根据权利要求2所述的显示基板,其特征在于,
所述第一金属图形和所述第二金属图形均沿行方向延伸;或
所述第一金属图形和所述第二金属图形均沿列方向延伸。
4.根据权利要求1所述的显示基板,其特征在于,
所述第一金属图形在所述衬底基板上的正投影落入所述第二金属图形在所述衬底基板上的正投影内。
5.根据权利要求1所述的显示基板,其特征在于,
所述第一金属图形为VDD信号线,所述第二金属图形为数据线;或
所述第二金属图形为VDD信号线,所述第一金属图形为数据线。
6.根据权利要求5所述的显示基板,其特征在于,所述显示基板为OLED显示基板,所述OLED显示基板具体包括:
位于衬底基板上的薄膜晶体管和数据线,所述薄膜晶体管的源电极与所述数据线连接;
覆盖所述薄膜晶体管和所述数据线的钝化层;
位于所述钝化层上的VDD数据线和导电连接线,所述导电连接线通过贯穿所述钝化层的过孔与所述薄膜晶体管的漏电极连接;
覆盖所述VDD数据线和导电连接线的平坦层;
位于所述平坦层上的阳极,所述阳极通过贯穿所述平坦层的过孔与所述导电连接线连接;
位于所述阳极上的像素界定层;
位于所述像素界定层限定区域内的有机发光层;
位于所述有机发光层上的阴极。
7.根据权利要求6所述的显示基板,其特征在于,所述导电连接线与所述VDD数据线采用相同材料。
8.根据权利要求1-7中任一项所述的显示基板,其特征在于,所述显示基板包括多个透光区域,每一所述透光区域在所述衬底基板上的正投影与所述显示基板的金属图形在所述衬底基板上的正投影不重合,单位面积内的所述透光区域的数量相同,且排布方式相同。
9.一种指纹识别面板,其特征在于,包括如权利要求1-8中任一项所述的显示基板和设置在所述显示基板非显示侧的指纹识别模组。
10.根据权利要求9所述的指纹识别面板,其特征在于,
所述指纹识别模组包括准直膜和感光传感器,所述准直膜用以透过指纹反射的准直光并遮挡散射光,所述感光传感器用以接收所述准直膜透过的准直光并根据所述准直光识别指纹。
11.根据权利要求10所述的指纹识别面板,其特征在于,在所述显示基板为柔性显示基板时,所述准直膜复用为所述显示基板的衬底基板。
12.一种指纹识别方法,其特征在于,应用于如权利要求9-11中任一项所述的指纹识别面板,所述指纹识别方法包括:
手指指纹将照射到指纹上的光进行反射,反射光经显示基板传播至指纹识别模组;
指纹识别模组根据接收到的光线识别指纹。
13.根据权利要求12所述的指纹识别方法,其特征在于,在所述显示基板包括多个透光区域,每一所述透光区域在所述衬底基板上的正投影与所述显示基板的金属图形在所述衬底基板上的正投影不重合,所述指纹识别模组包括准直膜和感光传感器时,所述指纹识别方法具体包括:
手指指纹将照射到指纹上的光进行反射,反射光经所述透光区域传播至所述准直膜;
所述准直膜透过反射光中的准直光,并遮挡反射光中的散射光;
所述感光传感器接收所述准直光,并根据所述准直光识别指纹。
14.一种显示装置,其特征在于,包括如权利要求9-11中任一项所述的指纹识别面板。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810476374.9A CN110502960B (zh) | 2018-05-17 | 2018-05-17 | 显示基板、指纹识别面板、指纹识别方法及显示装置 |
US16/224,907 US10867156B2 (en) | 2018-05-17 | 2018-12-19 | Display substrate, fingerprint identification panel, fingerprint identification method and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810476374.9A CN110502960B (zh) | 2018-05-17 | 2018-05-17 | 显示基板、指纹识别面板、指纹识别方法及显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110502960A true CN110502960A (zh) | 2019-11-26 |
CN110502960B CN110502960B (zh) | 2022-04-08 |
Family
ID=68532565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810476374.9A Active CN110502960B (zh) | 2018-05-17 | 2018-05-17 | 显示基板、指纹识别面板、指纹识别方法及显示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10867156B2 (zh) |
CN (1) | CN110502960B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112038368A (zh) * | 2020-08-17 | 2020-12-04 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及oled显示面板 |
WO2022236826A1 (zh) * | 2021-05-14 | 2022-11-17 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11922713B2 (en) * | 2018-09-27 | 2024-03-05 | Apple Inc. | Under-display optical fingerprint sensor with NFV collimator and TFT/organic imager |
KR20200137081A (ko) * | 2019-05-28 | 2020-12-09 | 삼성디스플레이 주식회사 | 지문 센서 및 이를 포함하는 표시 장치 |
KR20200137079A (ko) * | 2019-05-28 | 2020-12-09 | 삼성디스플레이 주식회사 | 지문 센서 및 이를 포함하는 표시 장치 |
CN112487849A (zh) * | 2019-09-12 | 2021-03-12 | 群创光电股份有限公司 | 电子装置及利用电子装置进行指纹辨识的方法 |
CN110969126B (zh) * | 2019-12-02 | 2022-11-04 | 厦门天马微电子有限公司 | 一种显示装置 |
TWI779445B (zh) * | 2020-01-22 | 2022-10-01 | 台灣愛司帝科技股份有限公司 | 顯示模組及其影像顯示器 |
CN113296277A (zh) * | 2020-02-24 | 2021-08-24 | 宁波激智科技股份有限公司 | 一种准直膜、及一种减干涉准直膜及其制备方法 |
GB2610521A (en) * | 2021-01-04 | 2023-03-08 | Boe Technology Group Co Ltd | Display panel and manufacturing method therefor, and display apparatus |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140183479A1 (en) * | 2012-12-28 | 2014-07-03 | Lg Display Co., Ltd. | Transparent organic light emitting display device and method for manufacturing the same |
CN104576694A (zh) * | 2014-12-17 | 2015-04-29 | 深圳市华星光电技术有限公司 | Oled显示装置及其制造方法 |
US20160067931A1 (en) * | 2010-03-26 | 2016-03-10 | Ubright Optronics Corporation | Optical substrates having light collimating and diffusion structures |
CN106293298A (zh) * | 2016-08-15 | 2017-01-04 | 京东方科技集团股份有限公司 | 触控显示基板及其制备方法、触控显示装置 |
US20170033173A1 (en) * | 2015-07-31 | 2017-02-02 | Samsung Display Co., Ltd. | Organic light emitting display device |
US20170220838A1 (en) * | 2015-06-18 | 2017-08-03 | Shenzhen Huiding Technology Co., Ltd. | Under-screen optical sensor module for on-screen fingerprint sensing |
US20170345845A1 (en) * | 2016-05-27 | 2017-11-30 | Xiamen Tianma Micro-Electronics Co., Ltd | Array substrate, display panel and display device including the same |
CN107507853A (zh) * | 2017-08-31 | 2017-12-22 | 上海天马微电子有限公司 | 一种有机发光显示面板、其制作方法及显示装置 |
CN107579101A (zh) * | 2017-08-30 | 2018-01-12 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
CN207116434U (zh) * | 2017-08-02 | 2018-03-16 | 京东方科技集团股份有限公司 | 一种oled基板及显示装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201218367A (en) * | 2010-09-14 | 2012-05-01 | Casio Computer Co Ltd | Transistor structure, manufacturing method of transistor structure, and light emitting apparatus |
CN107066162B (zh) * | 2017-05-27 | 2020-03-17 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
-
2018
- 2018-05-17 CN CN201810476374.9A patent/CN110502960B/zh active Active
- 2018-12-19 US US16/224,907 patent/US10867156B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160067931A1 (en) * | 2010-03-26 | 2016-03-10 | Ubright Optronics Corporation | Optical substrates having light collimating and diffusion structures |
US20140183479A1 (en) * | 2012-12-28 | 2014-07-03 | Lg Display Co., Ltd. | Transparent organic light emitting display device and method for manufacturing the same |
CN104576694A (zh) * | 2014-12-17 | 2015-04-29 | 深圳市华星光电技术有限公司 | Oled显示装置及其制造方法 |
US20170220838A1 (en) * | 2015-06-18 | 2017-08-03 | Shenzhen Huiding Technology Co., Ltd. | Under-screen optical sensor module for on-screen fingerprint sensing |
US20170033173A1 (en) * | 2015-07-31 | 2017-02-02 | Samsung Display Co., Ltd. | Organic light emitting display device |
US20170345845A1 (en) * | 2016-05-27 | 2017-11-30 | Xiamen Tianma Micro-Electronics Co., Ltd | Array substrate, display panel and display device including the same |
CN106293298A (zh) * | 2016-08-15 | 2017-01-04 | 京东方科技集团股份有限公司 | 触控显示基板及其制备方法、触控显示装置 |
CN207116434U (zh) * | 2017-08-02 | 2018-03-16 | 京东方科技集团股份有限公司 | 一种oled基板及显示装置 |
CN107579101A (zh) * | 2017-08-30 | 2018-01-12 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
CN107507853A (zh) * | 2017-08-31 | 2017-12-22 | 上海天马微电子有限公司 | 一种有机发光显示面板、其制作方法及显示装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112038368A (zh) * | 2020-08-17 | 2020-12-04 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及oled显示面板 |
WO2022236826A1 (zh) * | 2021-05-14 | 2022-11-17 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20190354740A1 (en) | 2019-11-21 |
CN110502960B (zh) | 2022-04-08 |
US10867156B2 (en) | 2020-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110502960A (zh) | 显示基板、指纹识别面板、指纹识别方法及显示装置 | |
US10185861B2 (en) | Display panel and electronic device | |
KR101552994B1 (ko) | 유기 발광 표시 장치 및 이의 제조 방법 | |
CN110534031B (zh) | 一种显示装置及指纹识别方法 | |
CN100517425C (zh) | 显示装置 | |
US10854850B2 (en) | Organic light-emitting diode display device | |
KR20190048785A (ko) | 표시 장치 및 그의 제조방법 | |
KR101765102B1 (ko) | 유기 발광 표시 장치 및 그의 제조방법 | |
US9601713B2 (en) | Electro-optic device, method of manufacturing electro-optic device, and electronic apparatus | |
CN106897701A (zh) | 光学指纹识别模组与显示面板、显示装置 | |
CN110501839A (zh) | 显示面板及显示装置 | |
CN111384106A (zh) | 显示装置及其制造方法 | |
CN109870855A (zh) | 一种阵列基板、液晶显示面板及液晶显示装置 | |
CN110187546A (zh) | 显示面板及指纹识别显示装置 | |
CN101750776A (zh) | 柔性液晶显示设备 | |
CN102566148A (zh) | 液晶显示面板及其制造方法 | |
JP2017068927A (ja) | 有機発光装置および電子機器 | |
US11450716B2 (en) | Electroluminescence display having micro-lens layer | |
CN102998862B (zh) | 阵列基板及液晶显示面板 | |
JPH05252344A (ja) | 画像読み取り/表示装置 | |
JP2016195000A (ja) | 有機発光装置および電子機器 | |
CN106647031B (zh) | 一种发光模块、显示装置及发光模块的制作方法 | |
CN110299397B (zh) | 显示面板和显示设备 | |
CN113555517A (zh) | 显示基板和显示装置 | |
CN100492624C (zh) | 外引脚结构、主动元件阵列基板、光电装置及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |