CN110487753A - Crystallinity detection device - Google Patents
Crystallinity detection device Download PDFInfo
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- CN110487753A CN110487753A CN201910402987.2A CN201910402987A CN110487753A CN 110487753 A CN110487753 A CN 110487753A CN 201910402987 A CN201910402987 A CN 201910402987A CN 110487753 A CN110487753 A CN 110487753A
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- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 148
- 238000002425 crystallisation Methods 0.000 claims abstract description 128
- 230000008025 crystallization Effects 0.000 claims abstract description 128
- 238000005259 measurement Methods 0.000 claims abstract description 6
- 238000009738 saturating Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 239000000470 constituent Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
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- Life Sciences & Earth Sciences (AREA)
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- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Electroluminescent Light Sources (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention discloses a kind of crystallinity detection device.Crystallinity detection device of the invention includes: light source, is arranged in the first side of the substrate of crystallization along first direction, and to the substrate irradiation light of the crystallization；Photographing element is arranged in second side with the substrate of the crystallization in contrast to first side, and shoots the image of the substrate of the crystallization；Polarizer is arranged between the substrate and photographing element of the crystallization, and is arranged relative to the substrate of the crystallization with first angle or second angle；And control unit, it is connected to the photographing element, transmissivity difference of the measurement through polarizer when arranging respectively with first angle and second angle.
Description
Technical field
The present invention relates to a kind of crystallinity detection devices.
Background technique
In general, display device can be applied to smart phone, laptop computer, digital camera, field camera,
The mobile devices such as portable data assistance, laptop, tablet PC, or be applied to desktop computer, television set,
Outdoor advertising plate is shown with electronics such as display device, meter for car disk, head-up displays (head up display, HUD)
Device.
Recently, more lightening display device is being released.
Flexible display apparatus (flexible display device) is easy to carry about with one, and can be applied to variform
Device.Wherein, most influential flexible display apparatus is the flexible display apparatus based on organic light emitting display technology.It is flexible
Display device can be bent to either direction.
Display device includes the semiconductor layer for being provided in thin film transistor (TFT) (thin film transistor, TFT).Half
Conductor layer includes the semiconductor substance of polysilicon (poly crystalline silicon) etc.It can be by by amorphous silicon
(amorphous silicon) is crystallized and is formed polysilicon.
Amorphous silicon can be tied by quasi-molecule laser annealing (excimer laer annealing, ELA) method
Crystallization.When being crystallized amorphous silicon, the substrate of subregion (split) is carried out for the energy according to application, will be passed through
Visual inspection and select suitable energy.But in the case of carrying out naked eyes detection, it may occur that the detection between different inspectors
The deviation of ability.Therefore, the time for being detected can be consumed, and leads to the delay of engineering time.
Summary of the invention
The embodiment of the present invention is used to provide a kind of crystallinity inspection that can easily select and be applied to the laser energy of substrate
Survey device.
The crystallinity detection device of one side according to the present invention includes: light source, is arranged in crystallization along first direction
First side of substrate, and to the substrate irradiation light of the crystallization；Photographing element is arranged in contrast to described in first side
Second side of the substrate of crystallization, and shoot the image of the substrate of the crystallization；Polarizer is arranged in the base of the crystallization
Between plate and photographing element, and arranged relative to the substrate of the crystallization with first angle or second angle；And control
Portion is connected to the photographing element, light transmittance of the measurement through polarizer when arranging respectively with first angle and second angle
Difference.
In one embodiment, the light source includes: green LED, the wave band with 480nm to 530nm.
In one embodiment, the first angle can correspond to such as lower angle: the polarizer is relative to the crystallization
The substrate of change arranges that the second angle can correspond to such as lower angle: the polarizer is relative to the crystallization with 0 °
Substrate is arranged with 90 °.
In one embodiment, the polarizer can be rotatably coupled to the end of the photographing element.
In one embodiment, it can also be arranged on the axis for having the light source, polarizer and photographing element selective
The bandpass filter that ground penetrates the light of specific band.
In one embodiment, the bandpass filter includes: filter, penetrates the light of the wave band of 505nm to 515nm.
In one embodiment, at least one shifting for transferring the substrate of the crystallization in a second direction can also be disposed with
Send device.
In one embodiment, the transfer device includes: substrate holder, supports the substrate of the crystallization；And transferred unit,
The substrate holder is transferred in a second direction；And guide part, the substrate of the crystallization is guided to second direction.
In one embodiment, the first direction can be the vertical direction of the substrate relative to the crystallization, described
Second direction can be the horizontal direction of the substrate relative to the crystallization.
In one embodiment, the light source can be located at the crystallization substrate downside, the photographing element and
Polarizer can be located at the upside of the substrate of the crystallization.
Detailed description of the invention
Fig. 1 is the plan view for showing the display device of an embodiment according to the present invention.
Fig. 2 is roughly to show carrying out by way of irradiating laser beam on substrate for an embodiment according to the present invention
The structure chart of the process of crystallization.
Fig. 3 is the structure chart for roughly showing the crystallinity detection device of an embodiment according to the present invention.
Fig. 4 is the crystallinity detection device for roughly showing Fig. 3 and the structure chart of transfer device.
Fig. 5 a is the photo that amplification shows the substrate with normal crystallization.
Fig. 5 b is shown on the substrate of Fig. 5 a with the structure chart of the polarizer of first angle arrangement.
Fig. 5 c is shown on the substrate of Fig. 5 a with the structure chart of the polarizer of second angle arrangement.
Fig. 6 a is the photo that amplification shows the substrate with improper crystallization.
Fig. 6 b is shown on the substrate of Fig. 6 a with the structure chart of the polarizer of first angle arrangement.
Fig. 6 c is shown on the substrate of Fig. 6 a with the structure chart of the polarizer of second angle arrangement.
Fig. 7 is the chart for showing the transmissivity difference of the substrate with normal crystallization of Fig. 5 a.
Fig. 8 is the chart for showing the transmissivity difference of the substrate with improper crystallization of Fig. 6 a.
Specific embodiment
The present invention can carry out a variety of transformation, and can have various embodiments, therefore will wherein specific embodiment show
Show and is described in detail in the accompanying drawings and in a specific embodiment.Referring concurrently to attached drawing and the embodiment being described in detail later,
Then advantages and features of the invention and reaches these method and will become clear.However, the present invention is not limited to following institute is public
The embodiment opened, but can be realized with variform.
In embodiment below, when referring to that the various constituent elements such as layer, film, region, plate are located at other constituent element " they
On " when, not only include the situation positioned at other constituent elements " immediately above ", further includes that centre is folded with other compositions and wants
The situation of element.Also, for ease of description, the size of the constituent element in figure can be exaggerated or reduce.For example, in order to just
In explanation, the size and thickness of each component shown in the accompanying drawings are to be arbitrarily shown, and the invention is not limited to show in attached drawing
Content out.
In following embodiment, x-axis, y-axis and z-axis are not limited to three axis in rectangular coordinate system, but can explain
It is the wider range of concept for including these.For example, x-axis, y-axis and z-axis can intersect vertically, but also may refer to mutually
The different directions from each other of out of plumb intersection.
Hereinafter, be described in detail referring to embodiment of the attached drawing to display device according to the present invention, referring to attached drawing into
When row illustrates, identical appended drawing reference, and the repeated explanation by omission to it are assigned to identical or corresponding constituent element.
Fig. 1 is the plan view for showing the display device 100 of an embodiment according to the present invention.
In one embodiment, the display device 100 can be organic light emitting display (organic light
emitting display).In another embodiment, the display device 100 can be liquid crystal display (liquid
Crystal display), Field Emission Display (field emission display), electric paper display (electronic
Paper display device) etc., but it is not limited to one of them.
Referring to attached drawing, the display device 100 includes substrate 110.
The substrate 110 can be glass substrate, polymeric substrates, fexible film.The substrate 110 can be it is transparent,
It is opaque or translucent.The substrate 110 can have soft characteristic.Display can be disposed on the substrate 110
The display area DA of the image and non-display area NDA extended to the periphery of display area DA.
Multiple pixel P can be disposed in the display area DA.Multiple pixel P can be located at data line DL and scan line
The intersection region of SL.It can be disposed in non-display area NDA from power supply device (not shown) to display area DA and transmit
Multiple plate portions 120 of electric signal.Although it is not shown, but multiple thin film transistor (TFT)s and electricity can be disposed on the substrate 110
It is connected to the display element of each thin film transistor (TFT).
The semiconductor layer for being provided in thin film transistor (TFT) can be polysilicon membrane.Polysilicon membrane can be by the base
Deposition of amorphous silicon layers on plate 110, then by laser beam amorphous silicon layer is crystallized in the way of formed.
It can be by utilizing chemical vapor deposition (chemical vapor deposition, CVD) device, plasma
Enhance the heavy of chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) device etc
Product device carries out the deposition of amorphous silicon layer.
It can use quasi-molecule laser annealing (excimer laser Annealing, ELA) method and carry out amorphous silicon layer
Crystallization.Amorphous silicon layer can be by solidifying, thus being crystallized again after the laser-light beam melts irradiated.
When carrying out the crystallization of amorphous silicon substrate using quasi-molecule laser annealing laser aid, need it is selected be applied to it is non-
The most suitable energy of crystal silicon substrate.It is then possible to which amorphous silicon substrate is crystallized according to selected most suitable energy density
Change, and is applied in the engineering of volume production based on it.
Referring to Fig. 2, substrate 210 is divided into 7 regions (A, B, C, D, E, F, G), and will each region (A, B, C,
D, E, F, G) apply the energy with mutually different value and carries out subregion.The substrate 210, which can be, is being applied to volume production work
It is used to select the survey baseplate of most suitable energy before journey.
In one embodiment, the number in the divided region of the substrate 210 can be selected, and arbitrarily in order to selected
Most suitable crystallization energy, the energy that each region is applied can have mutually different value.
It will do it crystallinity detection after the crystallization process for carrying out the substrate 210.
Fig. 3 is the structure chart for roughly showing the crystallinity detection device 300 of an embodiment according to the present invention.
Referring to attached drawing, the crystallinity detection device 300 includes: light source 310, photographing element 320, polarizer 330, control
Portion 340 and bandpass filter 350.
The light source 310 can be arranged in the first side of the substrate 220 of crystallization along first direction (Z-direction).It is real one
It applies in example, the light source 310 can be arranged in the downside of the substrate 220 of crystallization.The light source 310 can be to the base of crystallization
220 irradiation light of plate.The light source 310 includes the green LED with green band.The light source 310 can be equipped with multiple green
Color LED311.In order to arrange diffuser plate 360 on the light source 310 to the substrate 220 of crystallization equably irradiation light
Equal feature boards.In one embodiment, as long as the light source 310 has the lighting device of 480nm to 530nm wave band, then not
It is limited to any one.
The photographing element 320 can be arranged in second side of the substrate 220 of crystallization along first direction (Z-direction).Knot
Second side of the substrate 220 of the first side and crystallization of the substrate 220 of crystallization can be vertically oriented opposite each other
Position.The photographing element 320 can shoot the image of the substrate 220 of the crystallization through the polarizer 330.
The polarizer 330 can be arranged between the substrate 220 of crystallization and photographing element 320.The photographing element
320 and polarizer 330 can be arranged in crystallization substrate 220 upside.In another embodiment, the light source 310 can
To be arranged in the upside of the substrate 220 of crystallization, the photographing element 320 and polarizer 330 can be arranged in crystallization
The downside etc. of substrate 220 is not limited to some position as long as the component element is arranged on the same axis.
Make to 330 property of can choose of polarizer that only there is specific light into the light that the substrate 220 of crystallization irradiates
The light of axis passes through.The polarizer 330 can be in conjunction in the end 321 of the photographing element 320.The polarizer 330 can be with
It is rotatable circular disk.In another embodiment, the polarizer 330 can in conjunction with the rotating device being specially arranged and
Rotation.
The polarizer 330 can relative to crystallization substrate 220 with particular angular arrangement.Specifically, the polarisation
Plate 330 can be arranged relative to the substrate 220 of crystallization with first angle (θ 1) or second angle (θ 2).
The first angle (θ 1) can correspond to such as lower angle: base of the polarizer 330 relative to the crystallization
Plate 220 is located at 0 ° of position.The polarizer 330 for being arranged as first angle (θ 1) can be located relative to the substrate of the crystallization
The vertical direction in 220 crystallization direction.If the vertically disposed polarizer 330, through the crystallization
The light transmittance of substrate 220 may be minimum.
The second angle (θ 2) can correspond to such as lower angle: base of the polarizer 330 relative to the crystallization
Plate 220 is located at 90 ° of position.The polarizer 330 for being arranged as second angle (θ 2) can be located relative to the base of the crystallization
The parallel direction in the crystallization direction of plate 220.If arranging the polarizer 330 along parallel direction, the crystallization is penetrated
The light transmittance of substrate 220 may be maximum.
The polarizer 330 is postponed with first angle (θ 1) and second angle (θ 2) cloth, can be measured in first angle
The transmissivity difference of (θ 1) and second angle (θ 2).In another embodiment, if the substrate 220 of the crystallization rotated
90 °, then the value of the first angle (θ 1) and second angle (θ 2) can be opposite.Accordingly, minimum light transmittance and maximum transmission
Rate is also possible on the contrary.
The control unit 340 may be coupled to the photographing element 320.The control unit 340 can be in the polarizer
330 with the difference (△ T) of measurement light transmittance in the state of first angle (θ 1) or second angle (θ 2) arrangement.If described
The difference (△ T) of light rate is greater than preassigned a reference value, then is determined as that crystallinity is normal；If the difference of the light transmittance
(△ T) be less than preassigned a reference value, then can be determined that for crystallinity it is abnormal.
Being also provided on the optical axis from the light source 310 by the substrate 220 of the crystallization can be selective
The bandpass filter 350 (band pass filter) that ground penetrates the light of specific band.
Specifically, the light source 310 can be the green LED with 480nm to 530nm wave band.In the green band
In, resolution (resolution) can enough sufficiently.In one embodiment, the polarizer 330 with first angle (θ 1) or
In the state of person's second angle (θ 2) arrangement, in the wave band, the transmissivity difference (△ T) on the wave band of particular range can be with table
It is now the transmissivity difference (△ T) greater than the wave band in other ranges.
For example, the bandpass filter 350 includes that can selectively make the light as the wave band of 505nm to 515nm logical
The filter crossed.Make to 350 property of can choose of bandpass filter as 480nm into 530nm wave band maximum transmission rate and
The light that the difference of minimum light transmittance shows 505nm to the 515nm wave band of maximum wave band passes through.
For the bandpass filter 350, substrate 220 is penetrated with the light irradiated from light source 310 if be arranged in
On the identical axis of axis, then some is not limited to.The bandpass filter 350 can be located at the photographing element 320 and polarisation
Between plate 330.In this case, the bandpass filter 350 may be mounted at the inside of photographing element 320.In another reality
It applies in example, the bandpass filter 350 can be located between the substrate 220 and polarizer 330 of the crystallization.
In addition, the substrate 220 of the crystallization can be transferred by transfer device (the 400 of Fig. 4) to second direction.This
When, first direction can be vertically oriented (Z-direction), and second direction can be horizontally oriented (X-direction).
Referring to Fig. 4, the transfer device 400 include: substrate holder 410, transferred unit 420, the first guide part 430a and
Second guide part 430b.The first guide part 430a and the second guide part 430b (X-direction) can distinguish in a second direction
It is arranged in the two sides of crystallinity detection device 300.
The substrate holder 410 can support the substrate 220 of the crystallization.The substrate holder 410 can be along
Three directions (Y-direction) grasp the fixture of two marginal positions of the substrate 220.
The transferred unit 420 can connect on the substrate holder 410.The transferred unit 420 can will be supported on
The substrate 220 of the crystallization of the substrate holder 410 is transferred in a second direction (X-direction).The transferred unit 420 can be machine
People's utensil, transfer track, conveyer belt etc., as long as the device that can transfer the substrate 220 of the crystallization, then be not limited to
Some.
The first guide part 430a and the second guide part 430b can be by the substrate 220 of crystallization to second party
It is guided to (X-direction).The first guide part 430a includes multiple first idling roller 431a and the first air bearing elevator 432a.
The second guide part 430b includes multiple second idling roller 431b and the second air bearing elevator 432b.
The transferred unit 420 can be displaced through on multiple first idling roller 431a and multiple second idling roller 431b
And the substrate 220 for the crystallization transferred.Pass through the crystallization of multiple first idling roller 431a and multiple second idling roller 431b
Substrate 220 can be under air bearing state by transfer and between the light source 310 and photographing element 320.In an embodiment
In, the transfer device that the substrate 220 of the crystallization is transplanted between the light source 310 and photographing element 320 is not limited to
In some.
Referring to Fig. 3 and Fig. 4, the process for detecting crystallinity using crystallinity detection device 300 is described then as follows.
The substrate 220 of the crystallization of the substrate holder 410 is supported on by transferred unit 420 to the second direction (side X
To) transfer (that is, 1. number direction).The substrate 220 of the crystallization, which continues through, is arranged in the first of crystallinity detection device 300
The multiple first idling roller 431a and the first air bearing elevator 432a of side (left side of Fig. 4) are simultaneously located at the light source 310 and take the photograph
Between element 320.
For the substrate 220 of the crystallization while mobile to second direction (X-direction), the light source 310 will be to institute
State 220 irradiation light of substrate of crystallization.The light source 310 can be the green LED with green band.
It will transmit through the substrate 220 relative to the crystallization by the light of the substrate 220 of the crystallization with first angle
The polarizer 330 of (θ 1) arrangement.First angle (θ 1) corresponds to such as lower angle: the polarizer 330 is relative to the crystallization
Substrate 220 with 0 ° arrange.At this point, being only capable of making 505nm to 515nm wave due to being provided with bandpass filter 350 on optical axis
The light of section passes through.
The image of the substrate 220 of the crystallization will be shot by photographing element 320.
Then, the base penetrated relative to the crystallization is utilized by the control unit 340 for being connected to the photographing element 320
The light for the polarizer 330 that plate 220 is arranged with first angle (θ 1) measures the first light transmittance of the substrate 220 of crystallization.
The substrate 220 of the crystallization will be towards second side (right side of Fig. 4) that crystallinity detection device 300 is arranged in
Second air bearing elevator 432b and multiple second idling roller 431b and advance.
Accordingly, the state arranged in the polarizer 330 relative to the substrate 220 of the crystallization with first angle (θ 1)
Under, complete the measurement of the first light transmittance to the substrate 220 of crystallization.
Then, the substrate 220 of the crystallization of substrate holder 410 is supported on to continue through with backward (that is, 2. number direction)
Multiple second idling roller 431b and the second gas of second side (right side of Fig. 4) of the crystallinity detection device 300 are set
Float elevator 432b and between the light source 310 and photographing element 320.
The light discharged from the light source 310 will be pointed into the substrate 220 of the crystallization.Pass through the substrate of the crystallization
220 light will transmit through the polarizer 330 arranged with second angle (θ 2).Second angle (θ 2) corresponds to such as lower angle: described inclined
Tabula rasa 330 is arranged relative to the substrate 220 of the crystallization with 90 °.
The image of the substrate 220 of the crystallization will be shot by photographing element 320.
Next, utilizing through the substrate 220 relative to the crystallization by the control unit 340 with second angle (θ
2) light for the polarizer 330 arranged measures the second light transmittance of the substrate 220 of crystallization.
The substrate 220 of the crystallization can be to the first side (left side of Fig. 4 that the crystallinity detection device 300 is arranged in
Side) the first air bearing elevator 432a and multiple first idling roller 431a and advance.
Accordingly, the state arranged in the polarizer 330 relative to the substrate 220 of the crystallization with second angle (θ 2)
Under, complete the measurement of the second light transmittance to the substrate 220 of crystallization.
If the difference (△ T) of first light transmittance and second light transmittance is greater than preassigned a reference value,
Then it is determined as normal crystallization；In contrast, if the difference (△ T) of first light transmittance and second light transmittance is less than
Preassigned a reference value, then can be determined that for crystallinity it is abnormal.
Fig. 5 a is the photo that amplification shows the substrate 500 with normal crystallization, and Fig. 5 b is shown on the substrate 500 of Fig. 5 a
With the structure chart of the polarizer 330 of first angle (θ 1) arrangement, Fig. 5 c is shown on the substrate 500 of Fig. 5 a with second angle (θ
2) structure chart for the polarizer 330 arranged.
Referring to Fig. 5 a, Fig. 5 b and Fig. 5 c it is found that the substrate 500 with normal crystallization is crystallized with constant direction, crystallize
Mound H between the silicon of change is arranged regularly.The polarizer 330 relative to the crystallization substrate 220 with 0 ° of cloth
In the case of setting, light transmittance has minimum value, in contrast to this, in substrate of the polarizer 330 relative to the crystallization
In the case of 220 with 90 ° of arrangements, light transmittance has maximum value.
Light transmittance becomes the crystallization direction of the minimum substrate 500 for referring to crystallization and polarizer 330 is located at and is mutually perpendicular to
Direction on, light transmittance becomes the crystallization direction of the maximum substrate 500 for referring to crystallization and polarizer 330 is located at and is parallel to each other
Direction on.
Fig. 6 a is the photo that amplification shows the substrate 600 with improper crystallization, and Fig. 6 b is the substrate 600 shown in Fig. 6 a
On with first angle (θ 1) arrangement polarizer 330 structure chart, Fig. 6 c is shown on the substrate 600 of Fig. 6 a with second angle
The structure chart of the polarizer 330 of (θ 2) arrangement.
Referring to Fig. 6 a, 6b and 6c it is found that the crystallization direction of the substrate 600 with improper crystallization is non-constant, crystallization
Mound H-shaped between the silicon of change is at irregular arrangement.Therefore, base of the either described polarizer 330 relative to the crystallization
The situation that plate 220 is arranged with 0 °, or the situation arranged with 90 °, transmissivity difference are smaller.
The experiment of people is it is found that the polarizer 330 is arranged relative to the substrate 220 of the crystallization with 0 ° according to the present invention
Situation the first light transmittance and relative to the crystallization substrate 220 with 90 ° arrange situation the second light transmittance between
Difference (△ T) it is bigger, mottled etc undesirable probability occurs on the substrate 220 of crystallization and substantially reduces.
Fig. 7 is the chart for showing the transmissivity difference (△ T) of the substrate 500 with normal crystallization of Fig. 5 a, and Fig. 8 is to show
The chart of the transmissivity difference (△ T) of the substrate 600 with improper crystallization of Fig. 6 a.
Here, X-axis indicates that the distance (mm) of the substrate 220 of crystallization, Y-axis indicate transmissivity difference (△ T, %).
Referring to Fig. 7, the 5 respective transmissivity differences of region (A, B, C, D, E) (△ T) divided on substrate 500 are big
In 25% as preassigned reference line RL.Therefore, the substrate 500 of the crystallization has regular crystallinity arrangement,
The laser energy for being applied to 5 regions (A, B, C, D, E) can be chosen to be most suitable crystallization energy.
On the contrary, referring to Fig. 8, the upper 5 respective transmissivity difference (△ of region (A, B, C, D, E) divided on substrate 600
T) it is respectively less than 25% of the reference line RL as preassigned light transmittance.Therefore, the substrate 600 of the crystallization has and does not advise
The crystallinity of rule arranges, and the laser energy for being applied to 5 regions (A, B, C, D, E) cannot be chosen to be crystallization energy.
As described above, crystallinity detection device of the invention and can be to detect knot in the short time using its detection method
The substrate of crystallization it is normal and abnormal whether.Thus, it is easy to the selected appropriate laser energy being applied on substrate.
Effect of the invention in addition to the foregoing, necessarily can in conjunction with attached drawing and the content documented by the claim
Middle export.
Claims (10)
1. a kind of crystallinity detection device, wherein include:
Light source, is arranged in the first side of the substrate of crystallization along first direction, and to the substrate irradiation light of the crystallization；
Photographing element, second side of the substrate of the crystallization in contrast to first side is arranged in along first direction, and is clapped
Take the photograph the image of the substrate of the crystallization；
Polarizer is arranged between the substrate and photographing element of the crystallization, and relative to the substrate of the crystallization with
One angle or second angle arrangement；And
Control unit is connected to the photographing element, and measurement is through polarizer when being arranged respectively with first angle and second angle
Transmissivity difference.
2. crystallinity detection device as described in claim 1, wherein
The light source includes:
Green LED, the wave band with 480nm to 530nm.
3. crystallinity detection device as described in claim 1, wherein
The first angle corresponds to such as lower angle: the polarizer is arranged relative to the substrate of the crystallization with 0 °；
The second angle corresponds to such as lower angle: the polarizer is arranged relative to the substrate of the crystallization with 90 °.
4. crystallinity detection device as claimed in claim 3, wherein
The polarizer is rotatably coupled to the end of the photographing element.
5. crystallinity detection device as described in claim 1, wherein
Being disposed with, which there also is provided on the axis of the light source, polarizer and photographing element, selectively makes the light of specific band saturating
The bandpass filter crossed.
6. crystallinity detection device as claimed in claim 5, wherein
The bandpass filter includes:
Filter penetrates the light of the wave band of 505nm to 515nm.
7. crystallinity detection device as described in claim 1, wherein
It there also is provided at least one transfer device for transferring the substrate of the crystallization in a second direction.
8. crystallinity detection device as claimed in claim 7, wherein
The transfer device includes:
Substrate holder supports the substrate of the crystallization；
Transferred unit transfers the substrate holder in a second direction；And
Guide part guides the substrate of the crystallization to second direction.
9. crystallinity detection device as claimed in claim 7, wherein
The first direction is the vertical direction relative to the substrate of the crystallization,
The second direction is the horizontal direction relative to the substrate of the crystallization.
10. crystallinity detection device as claimed in claim 9, wherein
The light source is located at the downside of the substrate of the crystallization,
The photographing element and polarizer are located at the upside of the substrate of the crystallization.
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| KR10-2018-0055662 | 2018-05-15 | ||
| KR1020180055662A KR102520711B1 (en) | 2018-05-15 | 2018-05-15 | crystallization inspection apparatus and inspection method using the same |
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| JP2002184715A (en) * | 2000-12-18 | 2002-06-28 | Sony Corp | Thin film transistor manufacturing system and object surface evaluating device |
| US20100245810A1 (en) * | 2007-10-23 | 2010-09-30 | Yoshinori Hayashi | Inspection method based on captured image and inspection device |
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| KR20190131161A (en) | 2019-11-26 |
| KR102520711B1 (en) | 2023-04-12 |
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