CN110487420A - A kind of non-refrigerating infrared focal plane reading circuit of fast and stable - Google Patents
A kind of non-refrigerating infrared focal plane reading circuit of fast and stable Download PDFInfo
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- CN110487420A CN110487420A CN201910861184.3A CN201910861184A CN110487420A CN 110487420 A CN110487420 A CN 110487420A CN 201910861184 A CN201910861184 A CN 201910861184A CN 110487420 A CN110487420 A CN 110487420A
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- 230000003044 adaptive effect Effects 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229920006395 saturated elastomer Polymers 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
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- 230000005611 electricity Effects 0.000 description 4
- 238000003331 infrared imaging Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
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- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005459 micromachining Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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Abstract
The invention discloses a kind of non-refrigerating infrared focal plane reading circuits of fast and stable, including microbolometer element circuit array, column grade amplifying circuit and bias stabilizing circuit；Wherein: microbolometer element circuit array gates microbolometer line by line, accesses read-out channel；Column grade amplifying circuit provides bias for microbolometer and filters induced current, amplifies and be converted to output voltage, is then output to outside piece line by line；Bias stabilizing circuit introduces adaptive driving voltage when microbolometer unit enters a new line, and driving current needed for providing line feed guarantees bias fast and stable.Non-refrigerating infrared focal plane reading circuit of the invention can in low-temperature working fast and stable, guarantee the maximum time of integration to reduce the NETD of detector.
Description
Technical field
The present invention relates to infrared imagery techniques, more particularly to the non-brake method of one of infrared imagery technique fast and stable
Infrared focal plane read-out circuit.
Background technique
Currently, non refrigerating infrared imaging technology has important application in fields such as military affairs, industrial or agricultural, medicine, astronomy.Make
For the infrared focal plane array of non refrigerating infrared imaging technological core, including infrared detector array and reading circuit two parts.
Wherein, microbolometer FPA array (FPA) sensitivity with higher is a kind of most widely used uncooled ir
Focal plane arrays (FPA), its working principle is that temperature changes after thermo-sensitive material absorbs incident infra-red radiation, so as to cause self-resistance
The variation of value, the size of the change detection infrared radiation signal by measuring its resistance value.
Micro-metering bolometer generallys use the cantilever beam micro-bridge structure of micromachining technology production.Bridge floor is deposited with one layer
Thermo-sensitive material with high temperature coefficient of resistance (TCR), bridge floor have excellent mechanical performances by two and are coated with conductive material
The contact point of the support of bridge leg, bridge leg and substrate is bridge pier, and bridge pier is electrically connected to the silicon reading circuit under micro-metering bolometer
(ROIC) on.By bridge leg and bridge pier, thermo-sensitive material is connected in the electricity channel of reading circuit, and formation one is temperature sensitive
And it is connected to the pixel unit on reading circuit.
The effect of reading circuit is then the processing and reading for completing micro-metering bolometer (hereinafter referred to as pixel) signal, is read
Circuit has a major impact the performance of infrared imaging system.In recent years, requirement of the user to infrared focal plane array seeker is got over
Come higher, pixel dimension is smaller and smaller, is gradually reduced to 25um, 20um, 17um, 12um or even 10um from 35um.In order to as far as possible
Photosensitive area is increased, guarantees fill factor, the adjacent pixel needs of each column join end to end, share bridge pier, reduce the area of bridge pier.
The problem of this connection type causes be exactly pixel gating node by pixel resistance and parasitic capacitance form one it is huge
Time constant when leading to low-temperature working, is stablized the time and is especially grown, the decline of detector NETD performance.For this reason, it may be necessary to which it is steady to design bias
Circuit is determined to solve to share under bridge pier connection, and pixel is biased in low-temperature stabilization time long problem.
Summary of the invention
The brief overview about technical solution of the present invention is given below, in order to provide about of the invention certain
The basic comprehension of aspect.It should be appreciated that this summary is not an exhaustive overview of the invention.It is not intended to determine
Key or pith of the invention, nor is it intended to limit the scope of the present invention.Its purpose is only given in simplified form
Certain concepts out, taking this as a prelude to a more detailed description discussed later.
The technical problem to be solved by the present invention is to provide the non-refrigerating infrared focal plane reading circuits of a variety of fast and stables, can
The fast and stable in low-temperature working guarantees the maximum time of integration to reduce the NETD of detector.
A kind of non-refrigerating infrared focal plane reading circuit of fast and stable, it is characterised in that including microbolometer unit electricity
Road array, column grade amplifying circuit and bias stabilizing circuit；Wherein:
The microbolometer element circuit array gates microbolometer line by line, accesses read-out channel；The column grade
Amplifying circuit for microbolometer provide bias and by induced current filtering, amplify and be converted to output voltage, then line by line by
Column are output to outside piece；The bias stabilizing circuit introduces adaptive driving voltage when microbolometer unit enters a new line, and provides and changes
The required driving current of row, guarantees bias fast and stable.
Further, the column grade amplifying circuit includes calorifics short circuit micro-metering bolometer resistance Rd, saturation pipe M1, saturation
Pipe M2, amplifier opint, integrating capacitor C and its reset switch ￠ rst, wherein calorifics short circuit micro-metering bolometer resistance Rd's is defeated
Enter for bias Vsk, be saturated the input that the input of pipe M2 is bias Veb, the input of saturation pipe M1 is bias Vfid, amplifier opint
For bias Vref；The microbolometer element circuit includes bolometer resistance Rs [i], selects switch Sel [i], wherein i
∈[0,N-1]；The microbolometer element circuit array has been interconnected to constitute 1 column microbolometer array up and down, each
Microbolometer all joins end to end together；The bias stabilizing circuit includes clamp voltage generation circuit, driving amplifier
With clamp switch swc；The clamp voltage generation circuit includes resistance Rdm2, resistance Rsm2, saturation pipe M1m2, saturation pipe M2m2
And Live switch；The output voltage Vclamp of the clamp voltage generation circuit, by driving amplifier and switch swc by node
The voltage clamp of VsN is Vclamp；The clamp switch can be with NMOS switch or PMOS switch also or cmos transmission gate
To realize；The one end the resistance Rdm2 connects voltage Vsk, and the source of other end connection saturation pipe M2m2, the resistance Rdm2 was both
It can be calorifics short circuit micro-metering bolometer resistance, be also possible to the polysilicon resistance or trap electricity of integrated circuit technology production
Resistance；The source of the saturation pipe M2m2 meets bias Veb；Leakage of the source and drain terminal of the saturation pipe M1m2 with saturation pipe M2m2
End is connected, and is saturated pipe M1m2 and then passes through the switch of normal open and be connected to resistance Rsm2；The Live switch be in order to it is described micro-
Bolometer element circuit microwell array；The type of the resistance Rsm2 is identical as resistance Rdm2, either calorifics short circuit is micro-
Bolometer resistance is also possible to the polysilicon resistance or well resistance of integrated circuit technology production.
Further, the clamp voltage generation circuit, driving all pixels of amplifier share one, and clamp switch is then
Each column one, total M.
By the way that below in conjunction with attached drawing the following detailed description of the embodiment of the present invention, these and other of the invention is excellent
Point will be apparent from.
Detailed description of the invention
For the above and other advantages and features that the present invention is further explained, with reference to the accompanying drawing to of the invention specific
Embodiment is described in further detail.The attached drawing together with following detailed description include in the present specification and
Form a part of this specification.The element of function and structure having the same is denoted with the same reference numerals.It should be appreciated that
These attached drawings only describe typical case of the invention, and are not to be taken as the restriction to the scope of the present invention.
In the accompanying drawings:
Fig. 1 is the non-refrigerating infrared focal plane reading circuit example of the first fast and stable provided by the invention；
Fig. 2 is the non-refrigerating infrared focal plane reading circuit example of second of fast and stable provided by the invention；
Fig. 3 is the non-refrigerating infrared focal plane reading circuit working sequence example of fast and stable provided by the invention.
Specific embodiment
Exemplary embodiment of the invention is described hereinafter in connection with attached drawing.For clarity and conciseness,
All features of actual implementation mode are not described in the description.It should be understood, however, that developing any this actual implementation
Much decisions specific to embodiment must be made during example, to realize the objectives of developer, for example, symbol
Restrictive condition those of related to system and business is closed, and these restrictive conditions may have with the difference of embodiment
Changed.In addition, it will also be appreciated that although development is likely to be extremely complex and time-consuming, to having benefited from the disclosure
For those skilled in the art of content, this development is only routine task.
Here, and also it should be noted is that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings
Illustrate only with closely related device structure and/or processing step according to the solution of the present invention, and be omitted and the present invention
The little other details of relationship.
One aspect of the present invention provides a kind of non-refrigerating infrared focal plane reading circuit of fast and stable, comprising: micro- spoke
Penetrate heat meter element circuit, read-out channel and bias stabilizing circuit.Microbolometer (abbreviation detector) element circuit, micro- spoke
It penetrates heat meter element circuit to gate microbolometer line by line, accesses read-out channel；Read-out channel, the read-out channel are micro- radiation
Heat meter provides bias and filters induced current, amplifies and be converted to output voltage, is then output to outside piece line by line；Bias
Stabilizing circuit, the bias stabilizing circuit introduce adaptive driving voltage when microbolometer unit enters a new line, and provide line feed institute
The driving current needed guarantees bias fast and stable.
As described in background technology part in front, as the infrared focal plane array of non refrigerating infrared imaging technological core,
Including infrared detector array and reading circuit two parts.Reading circuit array of the invention is in order to guarantee under low temperature maximum integral
Time dexterously devises bias stabilizing circuit, guarantees detector sensitivity pixel bias fast and stable, to reduce NETD.
The embodiment of the present invention is described in detail below in conjunction with attached drawing.
Fig. 1 is the non-refrigerating infrared focal plane reading circuit brief introduction of fast and stable.Fig. 1 mainly includes three parts, and first
Dividing is microbolometer element circuit array 20, and second part is column grade amplifying circuit 10, Part III bias stabilizing circuit 30.
For the detector of N row M column split rate, detector contains N row M column pixel element circuit altogether, and arranges grade amplifying circuit 10
Number M.Each column amplifying circuit 10 is connect with a column N row microbolometer element circuit array 20.Column grade amplifying circuit master
It to include calorifics short circuit micro-metering bolometer resistance Rd, saturation pipe M1 and M2, amplifier opint, integrating capacitor C and its switch and partially
Press Vsk, Veb, Vfid and Vref etc..Microbolometer element circuit includes bolometer resistance Rs [i], selection switch Sel
[i], wherein [0, N-1] i ∈.Element circuit is connected with each other just constitutes 1 column microbolometer array up and down.In order to increase as far as possible
The area of microbolometer pixel, each microbolometer join end to end together, and this connection type referred to as " shares
Bridge pier ".Under the connection type for sharing bridge pier, due to pixel resistance and parasitic capacitance, column selection node VsN possesses one very big
Stablize the time.Core of the invention is by introducing bias stabilizing circuit 30, significantly by the low-temperature stabilization time of column selection node VsN
Shorten.Bias stabilizing circuit includes clamp voltage generation circuit, driving amplifier and clamp switch swc.Clamp voltage generation circuit
Produce voltage Vclamp, by driving amplifier and switch swc by the voltage clamp of node VsN be Vclamp.Drive amplifier
Powerful current output capability guarantee VsN in line feed can fast and stable to target value, reduce the low-temperature stabilization time.Clamper electricity
Generation circuit, driving all pixels of amplifier is pressed to share one, and clamp switch is then each column one, total M.Clamp switch
It can be realized with NMOS switch, PMOS switch or cmos transmission gate or otherwise.Clamp voltage generation circuit includes
Resistance Rdm2, Rsm2, saturation pipe M1m2 and M2m2, the one end Rdm2 connect voltage Vsk, and the other end connects the source of M2m2, Rdm2
Either calorifics short circuit micro-metering bolometer resistance, is also possible to polysilicon resistance, the well resistance of integrated circuit technology production
Etc..The source of pipe M2m2 is saturated as column grade amplifying circuit 10, meets bias Veb, so as to the working condition realization of the two
Match.Being saturated pipe M1m2 is a kind of diode connection, and source is connected with the drain terminal that drain terminal is M2m2, and M1m2 then passes through normal open
Switch be connected to resistance Rsm2.Live switch is to match with microbolometer element circuit array 20.The type of Rsm2
It is identical as Rdm2, either calorifics short circuit micro-metering bolometer resistance, is also possible to the polysilicon of integrated circuit technology production
Resistance, well resistance etc..Clamp voltage generation circuit can also have other forms, for example bias etc. is introduced directly outside piece.
As long as pixel node voltage clamper to particular value just belonged to by driving amplifier and switch when line feed or before integral starts
In the scope of this patent.
Fig. 2 is the non-refrigerating infrared focal plane reading circuit example of second of fast and stable provided by the invention.With Fig. 1 phase
Than Fig. 2 increases micro-metering bolometer mirror image circuit 40, mirror image circuit structure and microbolometer element circuit array 20, column
Grade amplifying circuit 10 is essentially identical, but the area of mirror image circuit is element circuit array 20, K times of column grade amplifying circuit 10
(such as 36 times).Meanwhile the Vfid voltage of column grade amplifying circuit 10 is provided by mirror image circuit 40.In mirror image circuit 40, resistance
Rdm mono- terminates Vsk, the source of another termination saturation pipe M2m1.And the grid end of M2m1 connects Veb, the leakage of drain terminal and saturation pipe M1m1
End and grid end are shorted, which is Vfid voltage output.The source of M1m1 connects micro-metering bolometer resistance Rsm array, knot
Structure is identical with Rs.Resistance Rdm and Rsm can be sensitive micro-metering bolometer resistance, blind micro-metering bolometer resistance, can also
To be polysilicon resistance, well resistance etc. in integrated circuit.The source of M1m1 is connected to Vclamp's also by switch swc
Buffer output.The source of M1m1 can be shorted with the source of M1 in column grade amplifying circuit 10 in mirror image circuit 40, can also be divided
A switch is not connect respectively.
Fig. 3 is working sequence example, in addition to this can also design many different working sequences.The main points of working sequence
Before being every row pixel gating, swc switching channels, in mirror image circuit 40 in the source of M1m1 and column grade amplifying circuit 10 M1 source
End is clamped to voltage Vclamp.In pixel line feed, the buffer of Vclamp provides strong driving capability to all column,
Stablize pixel bias, avoids pixel bias because ranks switch and violent variation occurs.In the example of fig. 3, sel [i] believes
It number is row selects signal, generally not overlapping or slightly overlapping signal.Swc signal controls clamp switch, has in row selects signal
It is gated before effect.After row gating, reset signal rst is effective, and after reset signal terminates, integral starts.Picture when due to line feed
First bias is clamped, so bias can be with fast and stable, the time of integration can be maximum, to reduce NETD.
The present invention is specifically described by taking 640 × 512 array infrared focal plane array reading circuits as an example below, but not
For limiting the scope of the invention.
As in the embodiment in figure 1, if Sel [1] is height, remaining row selects signal be it is low, then reading circuit passes through Sel
[1] inductive signal of the 1st row pixel Rs [1] is read out, and swc signal is height before this, so that VsN signal is entering a new line
Period is stationary value Vclamp always.This guarantees integrals to start as early as possible.And Vclamp is generated by bias generating circuit,
Size and the matched bias of pixel Rs can be adaptively generated under high/low temperature.Therefore, circuit can will be integrated in low temperature
Time increases, to reduce the NETD of detector.
Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations
Example.It will be understood by those skilled in the art that various modifications, equivalent replacement, variation etc. can also be done to the present invention, these transformation
It, all should be within protection scope of the present invention without departing from spirit of the invention.Also, in the structure of the present invention, each portion
Part can be decomposed and/or be reconfigured, these, which decompose and/or reconfigure, should be considered as equivalent scheme of the invention.
Claims (7)
1. a kind of non-refrigerating infrared focal plane reading circuit of fast and stable, it is characterised in that including microbolometer element circuit
Array (20), column grade amplifying circuit (10) and bias stabilizing circuit (30)；Wherein:
The microbolometer element circuit array (20), microbolometer is gated line by line, accesses read-out channel；
The column grade amplifying circuit (10) provides bias for microbolometer and filters induced current, amplifies and be converted to output
Then voltage is output to outside piece line by line；
The bias stabilizing circuit (30) introduces adaptive driving voltage when microbolometer unit enters a new line, and provides needed for line feed
Driving current, guarantee bias fast and stable.
2. the non-refrigerating infrared focal plane reading circuit of fast and stable as described in claim 1, it is characterised in that:
The column grade amplifying circuit (10) includes calorifics short circuit micro-metering bolometer resistance Rd, saturation pipe M1, saturation pipe M2, amplifier
Opint, integrating capacitor C and its reset switch ￠ rst, wherein the input of calorifics short circuit micro-metering bolometer resistance Rd is bias
The input that Vsk, the input for being saturated pipe M2 are bias Veb, the input of saturation pipe M1 is bias Vfid, amplifier opint is bias
Vref；
The microbolometer element circuit (20) includes bolometer resistance Rs [i], selects switch Sel [i], wherein i ∈
[0,N-1]；The microbolometer element circuit array (20) has been interconnected to constitute 1 column microbolometer array up and down, often
A microbolometer all joins end to end together；
The bias stabilizing circuit (30) includes clamp voltage generation circuit, driving amplifier and clamp switch swc；
The clamp voltage generation circuit includes that resistance Rdm2, resistance Rsm2, saturation pipe M1m2, saturation pipe M2m2 and normal open are opened
It closes；
The output voltage Vclamp of the clamp voltage generation circuit, by driving amplifier and switch swc by the voltage of node VsN
It clamps down on as Vclamp；The clamp switch can be with NMOS switch or PMOS switch also or cmos transmission gate is realized；
The one end the resistance Rdm2 connects voltage Vsk, and the source of other end connection saturation pipe M2m2, the resistance Rdm2 both can be with
It is calorifics short circuit micro-metering bolometer resistance, is also possible to the polysilicon resistance or well resistance of integrated circuit technology production；
The source of the saturation pipe M2m2 meets bias Veb；
The source and drain terminal of the saturation pipe M1m2 is connected with the drain terminal of saturation pipe M2m2, and is saturated pipe M1m2 and then passes through normal open
Switch be connected to resistance Rsm2；
The Live switch is to match with the microbolometer element circuit array (20)；
The type of the resistance Rsm2 is identical as resistance Rdm2, can also be with either calorifics short circuit micro-metering bolometer resistance
It is the polysilicon resistance or well resistance of integrated circuit technology production.
3. a kind of non-refrigerating infrared focal plane reading circuit of fast and stable as claimed in claim 2, it is characterised in that: described
Clamp voltage generation circuit, driving all pixels of amplifier share one, and clamp switch is then each column one, and total M.
4. a kind of non-refrigerating infrared focal plane reading circuit of fast and stable as claimed in claim 2 or claim 3, it is characterised in that:
It further include micro-metering bolometer mirror image circuit (40), mirror image circuit structure and microbolometer element circuit array (20), column
Grade amplifying circuit (10) is essentially identical, but the area of mirror image circuit is microbolometer element circuit array 20, the amplification of column grade
K times of circuit (10)；
The Vfid voltage of column grade amplifying circuit (10) is provided by mirror image circuit (40)；
In mirror image circuit (40), resistance Rdm mono- terminates Vsk, the source of another termination saturation pipe M2m1；And the grid end of M2m1 connects
The drain terminal and grid end of Veb, drain terminal and saturation pipe M1m1 are shorted, which is Vfid voltage output；
The source of M1m1 connects micro-metering bolometer resistance Rsm array, and structure is identical with Rs；
Resistance Rdm and resistance Rsm can be sensitive micro-metering bolometer resistance or blind micro-metering bolometer resistance, be also possible to
Polysilicon resistance or well resistance in integrated circuit；
The source of M1m1 is exported also by the buffer that switch swc is connected to Vclamp；
The source of M1m1 can be shorted with the source of M1 in column grade amplifying circuit 10 in the mirror image circuit (40), can also be distinguished
Respectively connect a switch.
5. such as the non-refrigerating infrared focal plane reading circuit of the described in any item fast and stables of claim 2 to 4, feature exists
In:
Sel [i] signal is row selects signal, signal that is generally not overlapping or slightly overlapping；
Swc signal controls clamp switch, gates before row selects signal is effective；
After row gating, reset signal rst is effective, and after reset signal terminates, integral starts.
6. the non-refrigerating infrared focal plane reading circuit of fast and stable as claimed in claim 4, it is characterised in that: the K takes
Value range is 1 to 40.
7. the non-refrigerating infrared focal plane reading circuit of fast and stable as claimed in claim 6, it is characterised in that: the K takes
Value 36.
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| CN201910861184.3A CN110487420B (en) | 2019-09-11 | 2019-09-11 | Fast and stable uncooled infrared focal plane reading circuit |
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| CN201910861184.3A CN110487420B (en) | 2019-09-11 | 2019-09-11 | Fast and stable uncooled infrared focal plane reading circuit |
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| CN110487420B CN110487420B (en) | 2021-06-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112326044A (en) * | 2020-09-25 | 2021-02-05 | 昆明物理研究所 | Logarithmic response ultrahigh-speed infrared focal plane pixel reading unit circuit |
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| CN205809758U (en) * | 2016-06-21 | 2016-12-14 | 杰华特微电子（杭州）有限公司 | Linear voltage-stabilizing circuit |
| CN210513428U (en) * | 2019-09-11 | 2020-05-12 | 昆明物理研究所 | Fast and stable uncooled infrared focal plane reading circuit |
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| CN101458124A (en) * | 2007-12-12 | 2009-06-17 | Ulis股份公司 | Device and system for detecting infrared radiation, method for reading an imaging bolometer |
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| CN204131379U (en) * | 2014-08-07 | 2015-01-28 | 灿瑞半导体(上海)有限公司 | A kind of clamper drive circuit |
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| CN112326044A (en) * | 2020-09-25 | 2021-02-05 | 昆明物理研究所 | Logarithmic response ultrahigh-speed infrared focal plane pixel reading unit circuit |
| CN112326044B (en) * | 2020-09-25 | 2022-05-31 | 昆明物理研究所 | Logarithmic response ultrahigh-speed infrared focal plane pixel reading unit circuit |
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| CN110487420B (en) | 2021-06-08 |
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