CN110473937B - Battery piece production method, battery piece and battery assembly - Google Patents
Battery piece production method, battery piece and battery assembly Download PDFInfo
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
The invention provides a cell production method, a cell and a cell assembly, and relates to the technical field of solar photovoltaics. The method comprises the following steps: arranging a scribing groove on a silicon wafer; manufacturing a solar cell by taking a silicon wafer provided with a scribing groove as a silicon substrate; and breaking the solar cell along the scribing groove to obtain the cell. In the application, the scribing groove is manufactured before the solar cell is manufactured, the thermal stress of the scribing groove cannot generate adverse effect on the solar cell, hydrogen in the passivation film cannot escape due to high temperature, and the passivation effect is improved; and the scribing groove is arranged on the silicon chip, and the scribing groove area is not exposed outside, so that the surface recombination is reduced, the passivation effect is improved, and the photoelectric conversion efficiency of the cell is improved.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a cell production method, a cell and a cell assembly.
Background
In the solar photovoltaic industry, a battery module formed by packaging battery cells and the like can improve the power of the photovoltaic module in a unit area, and further reduce the cost of a solar battery, so that the solar battery is widely applied.
At present, the generation method of the battery piece mainly comprises the following steps: the method comprises the steps of firstly, manufacturing a solar cell by taking a silicon wafer as a silicon substrate, and then scribing the solar cell to obtain a cell.
The inventor finds that the prior art proposal has the following disadvantages in the process of studying the prior art: on one hand, the photoelectric conversion efficiency of the solar cell is influenced by the thermal stress of scribing; on the other hand, the scribing area is exposed outside, and the surface recombination is serious.
Disclosure of Invention
The invention provides a cell production method, a cell and a cell assembly, and aims to improve the photoelectric conversion efficiency of the cell and reduce surface recombination.
In a first aspect, an embodiment of the present invention provides a method for producing a battery piece, where the method includes:
arranging a scribing groove on a silicon wafer;
manufacturing a solar cell by taking a silicon wafer provided with a scribing groove as a silicon substrate;
and breaking the solar cell along the scribing groove to obtain the cell.
Optionally, the length of the scribe line groove is equal to the width of the silicon wafer.
Optionally, the scribe line groove includes: the scribing groove comprises two opposite first scribing grooves and a second scribing groove positioned between the two opposite first scribing grooves;
the first scribing groove is positioned at the edge of the silicon chip;
the second scribing groove is communicated with the two opposite first scribing grooves, and the second scribing groove and the two opposite first scribing grooves are positioned on the same straight line;
the length of the first scribing groove is less than or equal to one tenth of the width of the silicon chip; the depth of the first scribing groove is 1-80 microns; the second scribe line groove has a depth of 1 to 20 micrometers.
Optionally, the scribe line groove includes: two opposing first scribe lanes;
the first scribing groove is positioned at the edge of the silicon chip; the two opposite first scribing grooves are positioned on the same straight line; the length of the first scribing groove is less than or equal to one tenth of the width of the silicon chip; the first scribing groove has a depth of 1 to 80 micrometers.
Optionally, the method of manufacturing a solar cell with a silicon wafer provided with a scribing groove as a silicon substrate includes:
the method comprises the following steps of taking a silicon wafer with a scribing groove as a silicon substrate, and manufacturing a solar cell through texturing, smoothing, cleaning and film coating;
in the texturing process, increasing a preset time period for pre-cleaning time to remove surface damage and line scribing groove region damage of the silicon wafer provided with the scribing grooves;
and/or the presence of a gas in the gas,
and in the coating process, coating amorphous silicon coating on the surface of the silicon wafer provided with the scribing groove and the scribing groove area so as to passivate the surface and the scribing groove area.
Optionally, the preset time period includes: 30 to 300 seconds.
In a second aspect, the embodiment of the invention provides a battery piece, wherein the battery piece is produced by any one of the above battery piece production methods.
In a third aspect, an embodiment of the present invention provides a battery assembly, where the battery assembly includes any one of the battery sheets described above.
In a fourth aspect, an embodiment of the present invention provides a battery piece generation apparatus, where the battery piece generation apparatus includes: the battery cell production method comprises an interface, a bus, a memory and a processor, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the battery cell production method according to any one of the preceding claims.
In a fifth aspect, the embodiment of the present invention provides a computer-readable storage medium, where an executable program is stored on the computer-readable storage medium, and the executable program is executed by a processor to implement the steps of the battery plate production method according to any one of the foregoing descriptions.
In the embodiment of the invention, a scribing groove is arranged on a silicon chip; manufacturing a solar cell by taking a silicon wafer provided with a scribing groove as a silicon substrate; and breaking the solar cell along the scribing groove to obtain the cell. Compared with the prior art, the solar cell is manufactured by taking a silicon wafer as a silicon substrate, then the solar cell is scribed to obtain a cell piece, the photoelectric conversion efficiency of the solar cell is influenced by the thermal stress of scribing, and the scribing area is exposed outside and the surface recombination is serious. In the application, the scribing groove is manufactured before the solar cell is manufactured, the thermal stress of the scribing groove cannot generate adverse effect on the solar cell, hydrogen in the passivation film cannot escape due to high temperature, and the passivation effect is improved; and the scribing groove is arranged on the silicon chip, and the scribing groove area is not exposed outside, so that the surface recombination is reduced, the passivation effect is improved, and the photoelectric conversion efficiency of the cell is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a flow chart illustrating steps of a method for manufacturing a battery plate according to a first embodiment of the present invention;
FIG. 2 shows a schematic view of a scribe line groove in an embodiment of the present invention;
FIG. 3 shows a schematic cross-sectional view of a silicon wafer in an embodiment of the invention;
FIG. 4 shows a schematic diagram of a silicon wafer in an embodiment of the invention;
FIG. 5 shows a schematic view of a further scribe line groove in an embodiment of the present invention;
FIG. 6 shows a schematic cross-sectional view of yet another silicon wafer in an embodiment of the invention;
FIG. 7 shows a schematic view of yet another scribe line groove in an embodiment of the present invention;
FIG. 8 shows a schematic cross-sectional view of yet another silicon wafer in an embodiment of the invention;
FIG. 9 shows a schematic diagram of yet another silicon wafer in an embodiment of the invention;
fig. 10 is a schematic structural diagram of a cell production apparatus according to an embodiment of the present invention.
Description of reference numerals:
13-scribing groove, 131-first scribing groove, 132-second scribing groove, 15-silicon chip, 111-interface, 112-processor, 113-memory, 114-bus.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 1, fig. 1 shows a flow chart of steps of a method for producing a battery piece according to a first embodiment of the present invention, and as shown in fig. 1, the method may include the following steps:
step 101: a scribing groove is arranged on the silicon wafer.
In the embodiment of the present invention, the scribe line groove may be provided on the silicon wafer by laser, diamond cutter, stress guide, or the like. In the embodiment of the present invention, this is not particularly limited.
In the embodiment of the invention, the process of setting the scribing groove may include a starting position and an end position of the scribing groove, a width and a depth of the scribing groove, and the like. The specific setting can be carried out according to actual needs. It should be noted that the width of the scribing groove is set to be as small as possible, so that damage to the silicon wafer or the solar cell is small, the cut waste is small, and cost can be saved to a certain extent. For example, the width of the scribe line groove may be: 20-30 microns, e.g., the width of the scribe line grooves may be 20 microns.
In the embodiment of the invention, the position of the scribing groove can be determined according to the fact that the solar cell is broken into a plurality of cells. For example, to break the solar cell into 2 pieces, the center line position of the silicon wafer may be determined as the position of the scribe line. In the embodiment of the present invention, optionally, the silicon wafer may be an N-type silicon wafer or a P-type silicon wafer. In the embodiment of the present invention, this is not particularly limited.
In the embodiment of the present invention, the size and the like of the silicon wafer may be determined according to actual needs, and in the embodiment of the present invention, this is not particularly limited.
For example, the silicon wafer may have a thickness of 80 to 200 microns, and for example, the silicon wafer may have a thickness of 180 μm. Laser or diamond cutter may be used to set the scribing groove on the silicon wafer.
In this embodiment of the present invention, optionally, before the step 101, the method may further include: and squaring the crystal bar to obtain the silicon wafer. In the embodiment of the present invention, this is not particularly limited.
In this embodiment of the present invention, optionally, the length of the scribe line groove is equal to the width of the silicon wafer.
Specifically, referring to fig. 2, fig. 2 is a schematic view illustrating a scribe line groove in an embodiment of the present invention. 13 in fig. 2 may be scribe lines. The length d1 of scribe line trenches 13 is equal to the width w1 of silicon wafer 15.
Referring to fig. 3, fig. 3 is a schematic cross-sectional view of a silicon wafer in an embodiment of the invention. The length of the scribe line groove 13 is equal to the width of the silicon wafer 15. The depth of the scribing groove 13 is smaller than the thickness of the silicon wafer 15, that is, the scribing groove does not scribe through the silicon wafer, and further the damage to the silicon wafer or the solar cell is small. For example, in FIG. 3, the silicon wafer 15 may have a thickness of 80 microns to 200 microns, e.g., the silicon wafer may have a thickness of 180 μm. The thickness h of the scribe line groove 13 may be 80 μm or less, and the scribe line groove does not scribe through the silicon wafer.
In the embodiment of the present invention, the depth of the score line groove 13 may be uniform throughout the entire length, or may be large in some lengths and small in some lengths, which is not particularly limited in the embodiment of the present invention. For example, the depth of the scribe line groove 13 may be 20 μm throughout the entire length.
FIG. 4 shows a silicon wafer schematic in an embodiment of the invention. If the solar cell is to be subsequently diced into 5 cells in fig. 4, 4 scribe grooves 13 may be provided, and the length of each scribe groove 13 is equal to the width of a silicon wafer. The solar cell may be subsequently diced into 5 pieces along the scribe line grooves 13. The scribe line grooves 13 are located at equal parts of the silicon wafer 4.
In an embodiment of the present invention, optionally, the scribe line groove includes: the scribing groove comprises two opposite first scribing grooves and a second scribing groove positioned between the two opposite first scribing grooves; the first scribing groove is positioned at the edge of the silicon chip; the second scribing groove is communicated with the two opposite first scribing grooves, and the second scribing groove and the two opposite first scribing grooves are positioned on the same straight line; the length of the first scribing groove is less than or equal to one tenth of the width of the silicon chip; the depth of the first scribing groove is 1-80 microns; the second scribe line groove has a depth of 1 to 20 micrometers.
Specifically, referring to fig. 5, fig. 5 shows a schematic view of another scribe line groove in an embodiment of the present invention. In fig. 5, 131 may be a first scribing groove, and 132 may be a second scribing groove. The second scribing groove 132 is located between two opposite first scribing grooves 131. The first scribe line groove 131 is located at the edge of the silicon wafer 15. The second scribing groove 132 is in communication with the two opposing first scribing grooves 131, that is, the sum of the lengths of the two opposing first scribing grooves 131 and the length of the second scribing groove 132 therebetween is equal to the width w1 of the silicon wafer 15. And the second scribing groove 132 is positioned on the same straight line as the two opposite first scribing grooves 131. The length d2 of the first scribe line 131 is less than or equal to one tenth of the width w1 of the silicon wafer 15. For example, the length d2 of the first scribe line 131 may be one twentieth of the width w1 of the silicon wafer 15.
Referring to FIG. 6, FIG. 6 is a schematic cross-sectional view of another silicon wafer in an embodiment of the present invention. In fig. 6, 15 is a silicon wafer, and the depth h1 of the first scribing groove 131 is 1 μm to 80 μm. The depth h2 of the second scribe line groove 132 is 1 μm to 20 μm. Although the depth of the first scribing groove 131 may be greater relative to the depth of the second scribing groove 132, the length of the first scribing groove is smaller, damage to the solar cell is less, and splitting is facilitated.
In an embodiment of the present invention, optionally, the scribe line groove includes: two opposing first scribe lanes; the first scribing groove is positioned at the edge of the silicon chip; the two opposite first scribing grooves are positioned on the same straight line; the length of the first scribing groove is less than or equal to one tenth of the width of the silicon chip; the first scribing groove has a depth of 1 to 80 micrometers.
Specifically, referring to fig. 7, fig. 7 shows a schematic view of a scribe line groove in an embodiment of the present invention. In fig. 7, 131 may be a first scribing groove, the first scribing groove 131 is located at the edge of the silicon chip 15, and two opposite first scribing grooves 131 are located on the same straight line L. The length d2 of the first scribing groove 131 is less than or equal to one tenth of the width w1 of the silicon chip 15, for example, the length d2 of the first scribing groove 131 may be equal to one twentieth of the width w1 of the silicon chip 15. The first scribing groove 131 has a smaller length and causes less damage to the solar cell.
Referring to fig. 8, fig. 8 is a schematic cross-sectional view of another silicon wafer in an embodiment of the invention. In fig. 8, 15 is a silicon wafer, and the depth h1 of the first scribing groove 131 is 1 μm to 80 μm. Therefore, the cell can be obtained by breaking the silicon wafer along the first scribing grooves oppositely arranged at the edge of the silicon wafer. Since the second scribe line groove is not provided outside the edge of the solar cell, damage to the solar cell is less.
FIG. 9 shows a schematic diagram of another silicon wafer in an embodiment of the invention. In fig. 9, if the solar cell is to be subsequently diced into 5 cells, 8 first dicing grooves 131 may be provided, two opposite first dicing grooves 131 are located at the edge of the silicon wafer, and the two opposite first dicing grooves 131 are located on the same straight line. And then the solar cell can be subsequently diced into 5 cell pieces along two opposite first scribing grooves 131 on the same straight line. Two opposing first scribe lines 131 are located on the silicon die at equal intervals 4.
Step 102: and (4) manufacturing the solar cell by taking the silicon wafer provided with the scribing groove as a silicon substrate.
In the embodiment of the invention, the silicon wafer provided with the scribing groove can be used as a silicon substrate to manufacture the solar cell. The solar cell may be a back contact solar cell or a heterojunction solar cell, etc. In the embodiment of the present invention, this is not particularly limited.
In an embodiment of the present invention, fabricating a solar cell may include: texturing, diffusion, plasma etching, chemical vapor deposition anti-reflection film, laser drilling, screen printing slurry, sintering and the like. The solar Cell may be a back contact solar Cell, a heterojunction solar Cell, a PERC (Passivated emitter and Rear Cell), an N-type Cell, a P-type Cell, a bifacial Cell, a Topcon (tunnel oxide Passivated contact solar Cell) or the like. In the embodiment of the present invention, this is not particularly limited.
In the embodiment of the present invention, optionally, the manufacturing of the solar cell by using the silicon wafer provided with the scribing groove as the silicon substrate may include: manufacturing a heterojunction solar cell by taking a silicon wafer provided with a scribing groove as a silicon substrate; and the heterojunction of the heterojunction solar cell and the scribing groove are respectively positioned on two sides of the silicon wafer.
Specifically, a silicon wafer provided with a scribing groove can be used as a silicon substrate to manufacture the heterojunction solar cell. For the heterojunction solar cell, the scribing groove and the heterojunction need to be located on two sides of the silicon wafer respectively, and then the scribing groove cannot damage the heterojunction, and the photoelectric conversion efficiency of the heterojunction solar cell cannot be reduced.
For example, if the scribe line grooves are provided on the front surface of the silicon wafer. Then, in fabricating the heterojunction solar cell, the heterojunction is disposed on the back side of the silicon wafer.
In an embodiment of the present invention, a process for fabricating a heterojunction solar cell may include: texturing, smoothing, cleaning, coating and the like. In the texturing process, the pre-cleaning time is increased by a preset time period so as to remove surface damage of the silicon wafer provided with the scribing groove and damage of a line scribing groove area. The preset time period may also be: 30 to 300 seconds. And/or in the coating process, coating amorphous silicon coatings on the surface of the silicon wafer provided with the scribing groove and the scribing groove area so as to passivate the surface and the scribing groove area.
In the embodiment of the invention, the scribing groove is firstly arranged on the silicon wafer, and then the silicon wafer with the scribing groove is used as a silicon substrate to manufacture the heterojunction solar cell. In the texturing process, the pre-cleaning time is increased by a preset time period, and damage of a scribing groove region in the silicon wafer is cleaned. And/or, the scribing groove area is also passivated with the amorphous silicon film and the like in the passivation stage. Compared with the method that the heterojunction solar cell is manufactured firstly and then the scribing groove is formed in the heterojunction solar cell, on one hand, the scribing groove is manufactured before the heterojunction solar cell is manufactured, and the thermal stress of the scribing groove cannot generate adverse effects on the heterojunction solar cell; on the other hand, the damage of the scribing groove area is cleaned, passivated and the like, the scribing groove area is not exposed outside, surface recombination is reduced, the passivation effect is improved, and the photoelectric conversion efficiency of the cell is improved.
In this embodiment of the present invention, optionally, step 102: the method for manufacturing the solar cell by using the silicon wafer provided with the scribing groove as the silicon substrate can comprise the following steps: the method comprises the following steps of taking a silicon wafer with a scribing groove as a silicon substrate, and manufacturing a solar cell through texturing, smoothing, cleaning and film coating; in the texturing process, increasing a preset time period for pre-cleaning time to remove surface damage and line scribing groove region damage of the silicon wafer provided with the scribing grooves; and/or in the coating process, coating amorphous silicon coating on the surface of the silicon wafer provided with the scribing groove and the scribing groove area so as to passivate the surface and the scribing groove area.
Specifically, a silicon wafer provided with a scribing groove can be used as a silicon substrate, and the solar cell is manufactured through the processes of texturing, smoothing, cleaning, film coating and the like. In the texturing process, the pre-cleaning time is increased by a preset time period so as to remove surface damage of the silicon wafer provided with the scribing groove and damage of a line scribing groove area. And/or in the coating process, coating amorphous silicon coatings on the surface of the silicon wafer provided with the scribing groove and the scribing groove area so as to passivate the surface and the scribing groove area.
In the embodiment of the invention, the scribing groove is firstly arranged on the silicon wafer, and then the silicon wafer with the scribing groove is used as a silicon substrate to manufacture the solar cell. In the texturing process, the pre-cleaning time is increased by a preset time period, and damage of a scribing groove region in the silicon wafer is cleaned. And/or, the scribing groove area is also passivated with the amorphous silicon film and the like in the passivation stage. Compared with the method that the solar cell is manufactured firstly and then the scribing groove is arranged on the solar cell, on one hand, the scribing groove is manufactured before the solar cell is manufactured, and the thermal stress of the scribing groove does not have adverse effect on the solar cell; on the other hand, the damage of the scribing groove area is cleaned, passivated and the like, the scribing groove area is not exposed outside, surface recombination is reduced, the passivation effect is improved, and the photoelectric conversion efficiency of the cell is improved. Particularly for the heterojunction solar cell, the thermal stress of the scribing groove can not generate adverse effect on the heterojunction solar cell, and hydrogen in the passivation film can not escape due to high temperature, so that the passivation effect is improved; on the other hand, the damage of the scribing groove area is cleaned, passivated and the like, the scribing groove area is not exposed outside, surface recombination is reduced, the passivation effect is improved, and the photoelectric conversion efficiency of the cell is improved.
For example, the open circuit voltage of a single cell in a 2-cut cell is only 0.02mv different from that of a whole solar cell. The photoelectric conversion efficiency of a single cell in 2-cut cells is only 0.03 percent different from that of the whole cell. For the open circuit voltage of a single cell in 5-cut cells, the open circuit voltage is different from that of the whole solar cell by only 0.03 mv. The photoelectric conversion efficiency of a single cell in the 5-cut cell is only 0.04 percent different from that of the whole cell.
In this embodiment of the present invention, optionally, the preset time period includes: 30 to 300 seconds. That is, in the texturing process, the pre-cleaning time is increased by 30 to 300 seconds, and the damage of the scribe line groove region in the silicon wafer is sufficiently cleaned to reduce surface recombination and the like.
For example, if the texturing process is performed, the pre-cleaning time may be 60s to 300 s. The pre-cleaning time can be increased by 30 to 300s, for example, increased by 120s or 180s, on the basis of the original 60s to 300s, so as to fully clean the damage of the scribe line groove region in the silicon wafer.
Step 103: and breaking the solar cell along the scribing groove to obtain the cell.
In the embodiment of the invention, the solar cell can be mechanically split along the scribing groove by vacuum adsorption, so as to obtain the cell piece. Alternatively, the solar cell may be subjected to stress-induced breaking along the scribe line grooves to obtain a cell piece, and the like. In the embodiment of the present invention, this is not particularly limited. For example, 2 pieces of the battery can be obtained by cutting 2 pieces, or 5 pieces of the battery can be obtained by cutting 5 pieces, and the like.
For example, in the case where the length of the scribe line groove is equal to the width of the silicon wafer, the wafer can be mechanically broken along the scribe line groove by vacuum suction. Alternatively, the breaking-off piece is stress-guided along the scribing groove 13.
For another example, the scribe line groove includes: under the condition of two opposite first scribing grooves and a second scribing groove between the two opposite first scribing grooves, the two opposite first scribing grooves and the second scribing groove between the two opposite first scribing grooves on the same straight line can be mechanically broken through vacuum adsorption. Or, the stress guiding breaking piece is arranged along two opposite first scribing grooves and a second scribing groove between the two opposite first scribing grooves which are positioned on the same straight line.
For another example, the scribe line groove includes: under the condition of two opposite first scribing grooves, the two opposite first scribing grooves on the same straight line can be mechanically broken through vacuum adsorption. Or, the stress guiding breaking piece is arranged along two opposite first scribing grooves and a second scribing groove between the two opposite first scribing grooves which are positioned on the same straight line.
In the embodiment of the invention, generally, the sheet breaking can be easier than mechanical sheet breaking due to stress guide. To the ruling groove include: under the condition of two opposite first scribing grooves, the stress guide can be used for breaking the solar cell into pieces along the two opposite first scribing grooves on the same straight line and the second scribing groove between the two opposite first scribing grooves, so that the solar cell is less damaged and the solar cell is easy to break into pieces under the condition of setting the shorter scribing grooves. In the embodiment of the present invention, this is not particularly limited.
In the embodiment of the invention, a scribing groove is arranged on a silicon chip; manufacturing a solar cell by taking a silicon wafer provided with a scribing groove as a silicon substrate; and breaking the solar cell along the scribing groove to obtain the cell. Compared with the prior art, the solar cell is manufactured by taking a silicon wafer as a silicon substrate, then the solar cell is scribed to obtain a cell piece, the photoelectric conversion efficiency of the solar cell is influenced by the thermal stress of scribing, and the scribing area is exposed outside and the surface recombination is serious. In the application, the scribing groove is manufactured before the solar cell is manufactured, the thermal stress of the scribing groove cannot generate adverse effect on the solar cell, hydrogen in the passivation film cannot escape due to high temperature, and the passivation effect is improved; and the scribing groove is arranged on the silicon chip, and the scribing groove area is not exposed outside, so that the surface recombination is reduced, the passivation effect is improved, and the photoelectric conversion efficiency of the cell is improved.
Example two
The embodiment of the invention provides a battery piece, and the battery piece can be obtained by any production method of the battery piece in the first embodiment. In the embodiment of the present invention, the related description of the first embodiment can be referred to for the battery cell, and the battery cell can achieve the corresponding beneficial effects of the first embodiment, and therefore, in order to avoid repetition, the description is omitted here.
The embodiment of the invention provides a battery assembly which comprises the battery piece. For example, the battery pack is made of the aforementioned battery sheet. The battery assembly can achieve the corresponding beneficial effects of the above embodiments, and the details are not repeated herein to avoid repetition.
Fig. 10 is a schematic structural diagram of a battery plate production apparatus according to an embodiment of the present invention, and as shown in fig. 10, the battery plate production apparatus according to an embodiment of the present invention may include:
an interface 111, a processor 112, a memory 113, and a bus 114; the bus 114 is used for realizing connection communication among the interface 111, the processor 112 and the memory 113; the memory 113 stores executable programs, and the processor 112 is configured to execute the executable programs stored in the memory 113 to implement the steps of the battery piece production method in the first embodiment or the second embodiment, and achieve the same technical effects, which are not described herein again to avoid repetition.
The invention further provides a computer-readable storage medium, where one or more executable programs are stored, and the one or more executable programs can be executed by one or more processors to implement the steps of the battery piece production method in the first embodiment or the second embodiment, and achieve the same technical effects, and therefore, the descriptions thereof are omitted to avoid repetition.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the embodiments of the application.
It should be noted that the embodiments are described with emphasis on the differences from the other embodiments, and the same or related parts between the embodiments may be referred to each other.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present invention.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (6)
1. A method of producing a battery piece, the method comprising:
arranging a scribing groove on a silicon wafer;
manufacturing a solar cell by taking a silicon wafer provided with a scribing groove as a silicon substrate;
breaking the solar cell along the scribing groove to obtain a cell slice;
the length of the scribing groove is less than or equal to the width of the silicon chip;
the method further comprises the following steps:
the scribing groove includes: two opposing first scribe lanes;
the first scribing groove is positioned at the edge of the silicon chip; the two opposite first scribing grooves are positioned on the same straight line; the length of the first scribing groove is less than or equal to one tenth of the width of the silicon chip; the first scribing groove has a depth of 1 to 80 micrometers.
2. The battery piece production method according to claim 1, wherein the scribe line groove comprises: the scribing groove comprises two opposite first scribing grooves and a second scribing groove positioned between the two opposite first scribing grooves;
the first scribing groove is positioned at the edge of the silicon chip;
the second scribing groove is communicated with the two opposite first scribing grooves, and the second scribing groove and the two opposite first scribing grooves are positioned on the same straight line;
the length of the first scribing groove is less than or equal to one tenth of the width of the silicon chip; the depth of the first scribing groove is 1-80 microns; the second scribe line groove has a depth of 1 to 20 micrometers.
3. The method for producing the solar cell as claimed in any one of claims 1 and 2, wherein the step of manufacturing the solar cell by using the silicon wafer provided with the scribing groove as a silicon substrate comprises the following steps:
the method comprises the following steps of taking a silicon wafer with a scribing groove as a silicon substrate, and manufacturing a solar cell through texturing, smoothing, cleaning and film coating;
in the texturing process, increasing a preset time period for pre-cleaning time to remove surface damage and line scribing groove region damage of the silicon wafer provided with the scribing grooves;
and/or the presence of a gas in the gas,
and in the coating process, coating amorphous silicon coating on the surface of the silicon wafer provided with the scribing groove and the scribing groove area so as to passivate the surface and the scribing groove area.
4. The battery piece production method according to claim 3, wherein the preset time period comprises: 30 to 300 seconds.
5. A battery sheet produced by the battery sheet production method according to any one of claims 1 to 4.
6. A battery pack comprising the battery sheet of claim 5.
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| CN111916529B (en) * | 2020-07-17 | 2022-07-15 | 隆基绿能科技股份有限公司 | Solar cell cutting method and cell |
| CN112885923A (en) * | 2020-08-12 | 2021-06-01 | 北京绿波静心新能源科技有限公司 | Silicon solar cell preparation method, silicon wafer and silicon solar cell |
| CN114447139B (en) * | 2020-10-19 | 2024-04-16 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and scribing method thereof and photovoltaic module |
| CN114613874A (en) * | 2020-11-25 | 2022-06-10 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing battery piece for forming laminated battery |
| CN112909128A (en) * | 2021-02-07 | 2021-06-04 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
| CN113036002B (en) * | 2021-03-04 | 2023-04-07 | 苏州联诺太阳能科技有限公司 | Solar cell preparation method |
| CN113328010A (en) * | 2021-05-28 | 2021-08-31 | 安徽华晟新能源科技有限公司 | Preparation method of solar cell |
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| JP2011216646A (en) * | 2010-03-31 | 2011-10-27 | Mitsuboshi Diamond Industrial Co Ltd | Scribing device |
| CN104201240A (en) * | 2014-08-29 | 2014-12-10 | 四川钟顺太阳能开发有限公司 | Production process for solar cell, and solar cell produced by same |
| CN106489211A (en) * | 2014-05-27 | 2017-03-08 | 太阳能公司 | Imbrication formula solar module |
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| US8080856B2 (en) * | 2008-09-02 | 2011-12-20 | Gady Golan | Photoelectric structure and method of manufacturing thereof |
| US10236406B2 (en) * | 2014-12-05 | 2019-03-19 | Solarcity Corporation | Systems and methods for targeted annealing of photovoltaic structures |
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| JP2011216646A (en) * | 2010-03-31 | 2011-10-27 | Mitsuboshi Diamond Industrial Co Ltd | Scribing device |
| CN106489211A (en) * | 2014-05-27 | 2017-03-08 | 太阳能公司 | Imbrication formula solar module |
| CN104201240A (en) * | 2014-08-29 | 2014-12-10 | 四川钟顺太阳能开发有限公司 | Production process for solar cell, and solar cell produced by same |
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