CN110473918A - Channel grid structure I GBT - Google Patents
Channel grid structure I GBT Download PDFInfo
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- CN110473918A CN110473918A CN201910817842.9A CN201910817842A CN110473918A CN 110473918 A CN110473918 A CN 110473918A CN 201910817842 A CN201910817842 A CN 201910817842A CN 110473918 A CN110473918 A CN 110473918A
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- 230000001413 cellular effect Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 25
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 206010037660 Pyrexia Diseases 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000001788 irregular Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Abstract
The present invention provides a kind of channel grid structure I GBT.Channel grid structure I GBT includes substrate and multiple IGBT cellulars, each IGBT cellular includes grid, there is multiple first groove units and second groove unit in substrate, the grid of each IGBT cellular is arranged in a one-to-one correspondence in the groove of first groove unit, at least adjacent first groove unit is connected to by second groove unit, and grid material is filled in the groove of first groove unit and second groove unit, the grid material in first groove unit constitutes the grid of IGBT cellular.Using above structure of the invention, it can not only be by partly or entirely removing the grid material above substrate, to reduce the parasitic capacitance of device, it can also realize the adjustment to distance between each IGBT cellular, and then enable channel grid structure I GBT that there is excellent heat dissipation consistency, enable channel grid structure I GBT that there is high power density.
Description
Technical field
The present invention relates to technical field of semiconductor device, in particular to a kind of channel grid structure I GBT.
Background technique
IGBT (insulated gate bipolar transistor) is widely used in field of power electronics, is that the core of current signal processing is opened
Close device.It is forced down with input impedance height, conducting, high current, high-power signal processing is very suitable to, at present in motor control
The fields such as system, UPS inverter type welder household electrical appliance are widely applied.
Since IGBT is very suitable to processing high current high power signals, its own consumption heating is also very surprising
's.And major part IGBT damage be also all since chip overheating directly results in, or overheat lead to chip long-term reliability
Decline resulting devices failure.Industry generally goes to solve IGBT heating problem there are two types of thinking at present, and one is to try to reduce chip
Oneself power consumption fever includes the on-state and dynamic that back was thinned and came by adjusting front cellular concentration and structure adjusting device
Power consumption second is that improving the radiator of IGBT, such as increases radiator area or replaces wind-cooling heat dissipating using water-cooled radiator
Device etc..However, current IGBT still there is fever or heat dissipation is uneven, since the serious fever of chip certain point, by
Step spreads and burns.
Also, it is located at the grid material above substrate, interlayer dielectric layer and emitter in existing IGBT to draw between layer
There are biggish parasitic capacitances, to seriously affect the performance of device.
Summary of the invention
The main purpose of the present invention is to provide a kind of channel grid structure I GBT, to solve IGBT in the prior art
The problem for causing performance poor due to parasitic capacitance.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of channel grid structure I GBT, packet
Substrate and multiple IGBT cellulars are included, each IGBT cellular includes grid, has multiple first groove units and second groove in substrate
The grid of unit, each IGBT cellular is arranged in a one-to-one correspondence in the groove of first groove unit, the first at least partly adjacent ditch
Slot unit is connected to by second groove unit, and grid material is filled in the groove of first groove unit and second groove unit
Material, the grid material in first groove unit constitute the grid of IGBT cellular.
Further, first groove unit is arranged along first direction sequence.
Further, first groove unit forming array structure, array structure include multiple rows of arranged in the first direction
One trench cell.
Further, spaced set between adjacent each first groove unit, each adjacent first groove unit pass through the
The connection of two trench cells.
Further, the spacing of the first groove unit of same row is H1, between the minimum of the first groove unit of adjacent row
Away from for L1, and L1 is less than H1, and the first groove unit of adjacent row is connected by second groove unit.
Further, the groove in each first groove unit surrounds closed geometric figure.
Further, first groove unit is arranged along first direction sequence, and second groove unit extends in a first direction simultaneously
It is connected to each first groove unit.
Further, the groove in each first groove unit extends in a second direction, and second direction is different from first direction.
Further, each first groove unit includes two first grooves, and two first grooves have different extensions
Direction, one end of first groove crosses in second groove unit in preferably each first groove unit.
Further, each first groove unit includes the first groove of two axial symmetry setting, each first groove flexure type
Groove, preferably flexure type groove are arcuate furrow, and the end of two arcuate furrows is connected to structure in more preferable each first groove unit
At circular groove.
Further, defining has cellular region, each IGBT cellular between groove adjacent in first groove unit further include:
First conduction type base region is located in cellular region；Second conduction type emitter region, be located at the first conduction type base region in and and grid
Pole contact；Emitter is set to the side that substrate has grid, and emitter and the first conduction type base region and the second conductive-type
The contact setting of type emitter region；First conductivity type implanted region, defining has non-cell area between adjacent first groove unit, the
One conductivity type implanted region is located in non-cell area.
Further, IGBT cellular further include: contact hole is through in substrate and by the second conduction type emitter region
First conduction type base region, and emitter is filled in contact hole；Emitter draws layer, and emitter draws layer and is set to substrate tool
There is the side of grid and is connect with emitter.
It applies the technical scheme of the present invention, provides a kind of channel grid structure I GBT, due to the channel grid knot
There is multiple first groove units and second groove unit, at least adjacent first groove unit passes through the in the substrate of structure IGBT
The connection of two trench cells, the grid material in the groove of first groove unit constitute the grid of IGBT cellular.Due to first
Trench cell is connected to the groove in second groove unit, and is filled with grid material, so as to by part or all of
Removal is located at the grid material above substrate, to reduce the parasitic capacitance of device.Also, above-mentioned IGBT of the invention can not only
According to the needs of device setting by reasonably adjusting the spacing in above-mentioned adjacent each IGBT cellular between first groove unit, moreover it is possible to
Enough by adjusting the spacing between groove in set second groove unit, the tune to distance between each IGBT cellular is realized
It is whole, and then enable channel grid structure I GBT that there is excellent heat dissipation consistency, make channel grid structure I GBT
There can be high power density.
Detailed description of the invention
The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 shows a kind of partial cross section of channel grid structure I GBT provided by embodiment according to the present invention and shows
It is intended to；
Fig. 2 shows first groove lists in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Groove in member surrounds the overlooking structure diagram of rectangle；
Fig. 3 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Groove in member surrounds the overlooking structure diagram of diamond shape；
Fig. 4 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Groove in member surrounds the overlooking structure diagram of regular hexagon；
Fig. 5 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Groove in member surrounds the overlooking structure diagram of triangle；
Fig. 6 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Member surrounds the overlooking structure diagram of rectangle with the groove in second groove unit；
Fig. 7 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Member surrounds the overlooking structure diagram of parallelogram with the groove in second groove unit；
Fig. 8 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Member surrounds trapezoidal overlooking structure diagram with the groove in second groove unit；
Fig. 9 shows first groove list in a kind of channel grid structure I GBT provided by embodiment according to the present invention
Member surrounds the overlooking structure diagram of triangle with the groove in second groove unit；
Figure 10 shows the grid material being located on substrate in a kind of channel grid structure I GBT provided in Fig. 6
The schematic partial cross-sectional view of dotted portion after part removes；
Figure 11 shows the grid material being located on substrate in a kind of channel grid structure I GBT provided in Fig. 1
The schematic partial cross-sectional view of dotted portion after all removing.
Wherein, the above drawings include the following reference numerals:
10, first groove unit；110, first groove；20, second groove unit；30, grid；310, grid material；40,
First conduction type base region；50, the second conduction type emitter region；60, emitter；70, emitter draws layer；80, first is conductive
Type implanted region；90, interlayer dielectric layer.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
The fever of IGBT in the prior art is described in background technique of the invention always due to unevenness of generating heat or radiate
It is even, since the serious fever of chip certain point, gradually spreads and burn, therefore it is urgent to provide a kind of IGBT knots in the prior art
Structure, to solve the above technical problems.In order to solve the above-mentioned technical problem applicant of the present invention, provides a kind of channel grid
Structure I GBT, as shown in Figures 1 to 9, including substrate and multiple IGBT cellulars, each IGBT cellular include grid 30, above-mentioned substrate
In there is multiple first groove units 10 and second groove unit 20, the grid 30 of each IGBT cellular is arranged in a one-to-one correspondence first
In the groove of trench cell 10, at least partly adjacent first groove unit 10 is connected to by second groove unit 20, and first
Grid material 310, the grid in first groove unit 10 are filled in the groove of trench cell 10 and second groove unit 20
The grid 30 of the composition IGBT cellular of pole material 310.
Since substrate has multiple first groove units and the second ditch in above-mentioned channel grid structure I GBT of the invention
Slot unit, first groove unit are connected to the groove in second groove unit, and are filled with grid material, so as to pass through
Partly or entirely removal is located at the grid material above substrate, to reduce the parasitic capacitance of device；Also, of the invention is above-mentioned
IGBT can not only be by reasonably adjusting the spacing in above-mentioned adjacent each IGBT cellular between first groove unit, additionally it is possible to pass through
The spacing in above-mentioned second groove unit between groove is adjusted, realizes the adjustment to distance between each IGBT cellular, and then make this
Channel grid structure I GBT can have excellent heat dissipation consistency, and channel grid structure I GBT is enable to have Gao Gong
Rate density.
Specifically, first groove unit 10 and second groove unit in channel grid structure I GBT are shown in Fig. 2 to 9
20 structure and connection relationship, first groove unit 10 and second groove unit 20 are both formed in the front of substrate, adjacent each
Most short spacing in IGBT cellular between first groove unit 10 is L1, in second groove unit 20 between adjacent each groove most
Short spacing is L2, since the heat of cellular can dissipate around, to can be conducive to core by adjusting above-mentioned L1 and/or L2
The heat dissipation of piece makes channel grid structure I GBT have excellent heat dissipation consistency, while also having adjusted chip
On-state voltage drop.
In the first embodiment of the present invention, first groove unit 10 is arranged along first direction sequence；Preferably, adjacent each
Spaced set between first groove unit 10, each adjacent first groove unit 10 are connected to by second groove unit 20.
In the above-described embodiments, the groove extension of first groove unit 10 surrounds ring-shaped groove, and signified annular can herein
To include annulus, straight-flanked ring, triangular loop, diamond shape ring, regular polygon ring and irregular annular etc., the region that ring-shaped groove surrounds
It can be arbitrary geometric figure.
In the second embodiment of the present invention, 10 forming array structure of first groove unit, array structure includes multiple rows of edge
The first groove unit 10 of first direction arrangement；Preferably, spaced set between adjacent each first groove unit 10 is each adjacent
First groove unit 10 pass through second groove unit 20 be connected to.
In the above-described embodiments, the groove extension of first groove unit 10 surrounds ring-shaped groove, and signified annular can herein
To include annulus, straight-flanked ring, triangular loop, diamond shape ring, regular polygon ring and irregular annular etc., the region that ring-shaped groove surrounds
It can be arbitrary geometric figure, as the groove in above-mentioned first groove unit 10 can surround rectangle as shown in Figure 2, such as scheme
Diamond shape shown in 3 or regular hexagon as shown in Figure 4.
In the third embodiment of the present invention, the spacing of the first groove unit 10 of same row be H1, the first of adjacent row
The minimum spacing of trench cell 10 is L1, and L1 is less than H1, and the first groove unit 10 of adjacent row passes through second groove unit 20
It is connected.
In the above-described embodiments, the groove extension of first groove unit 10 surrounds ring-shaped groove, and signified annular can herein
To include annulus, straight-flanked ring, triangular loop, diamond shape ring, regular polygon ring and irregular annular etc., the region that ring-shaped groove surrounds
It can be arbitrary geometric figure, as the groove in above-mentioned first groove unit 10 can surround triangle as shown in Figure 5.
In the fourth embodiment of the present invention, first groove unit 10 is arranged along first direction sequence, second groove unit
20 extend in a first direction and are connected to each first groove unit 10, such as Fig. 6 to Fig. 9.Groove in above-mentioned first groove unit 10
It is connected to the groove in second groove unit 20, the region surrounded can be arbitrary geometric figure, such as circle, rectangle, triangle
Shape, diamond shape and regular polygon etc. or even irregular figure.
In the above embodiment, it is preferable that the groove in each first groove unit 10 extends in a second direction, second direction
Different from first direction, as shown in Figure 6 and Figure 7.At this point, groove and second groove unit 20 in above-mentioned first groove unit 10
In groove connection, the region surrounded can be arbitrary parallelogram, when above-mentioned second direction and above-mentioned first direction hang down
When straight, the groove in above-mentioned first groove unit 10 and above-mentioned second groove unit 20 surrounds rectangle as shown in FIG. 6, when above-mentioned
When second direction and the direct angle of above-mentioned first direction are acute angle (or obtuse angle), above-mentioned first groove unit 10 and above-mentioned second
Groove in trench cell 20 surrounds parallelogram as shown in Figure 7.
In the above embodiment, it is preferable that each first groove unit 10 includes two first grooves 110, and two first
Groove 110 has different extending directions, at this point, the groove in above-mentioned first groove unit 10 and above-mentioned second groove unit 20
It surrounds as shown in Figure 8 trapezoidal；It is further preferable that one end of first groove 110 is in second groove in each first groove unit 10
Cross in unit 20, at this point, the groove in above-mentioned first groove unit 10 and above-mentioned second groove unit 20 can also surround as
Triangle shown in Fig. 9.
In the above embodiment, it is preferable that each first groove unit 10 includes the first groove of two axial symmetry setting
110, each 110 flexure type groove of first groove, above-mentioned flexure type groove can be arcuate furrow；It is further preferable that each first ditch
The end connection of two arcuate furrows constitutes circular groove in slot unit 10.
But it should be noted that in above-mentioned channel grid structure I GBT of the invention, first groove unit 10 and second
Groove in trench cell 20 is not limited to structure and connection relationship shown in Fig. 2 to Fig. 9, as long as making at least partly adjacent
First groove unit 10 pass through second groove unit 20 be connected to.
In above-mentioned channel grid structure I GBT of the invention, define between groove adjacent in first groove unit 10
With cellular region, each IGBT cellular can also include the first conduction type base region 40, the second conduction type emitter region 50, emitter
60, emitter draws layer 70 and the first conductivity type implanted region 80, as shown in Figure 1.
Above-mentioned first conduction type base region 40 is located in cellular region；Above-mentioned second conduction type emitter region 50 is located at first and leads
It is contacted in electric type base area 40 and with trench gate structure；Above-mentioned emitter 60 is set to the side that substrate has grid 30, and sends out
Emitter-base bandgap grading 60 contacts setting with the first conduction type base region 40 and the second conduction type emitter region 50；Define adjacent first groove list
There is non-cell area, above-mentioned first conductivity type implanted region 80 is located in non-cell area between member 10.
Preferably, contact hole is opened up in above-mentioned substrate, which is through to by the second conduction type emitter region 50
One conduction type base region 40；At this point, above-mentioned emitter 60 is filled in contact hole.Above-mentioned IGBT cellular can also include that interlayer is situated between
Matter layer 90 is isolated for grid 30 to be drawn layer 70 with emitter.
Due to recessed in first groove unit and second groove unit in above-mentioned channel grid structure I GBT of the invention
Slot connection, and it is filled with grid material, so that the grid material 310 above substrate is located at by partly or entirely removal, with
Reduce and draw the parasitic capacitance generated between layer 70 in grid material 310, interlayer dielectric layer 90 and emitter, such as Figure 10 and Figure 11
It is shown.
Above-mentioned IGBT cellular can also include the second conduction type buffer area, the first conduction type collecting zone and collector
(being not shown in figure), above-mentioned first conduction type collecting zone and above-mentioned second conduction type buffer area are located in substrate far from grid
The side of pole, above-mentioned collector are covered in the back side of substrate and contact with collecting zone.
Independently selected from N-type and p-type, those skilled in the art can root for above-mentioned first conduction type and the second conduction type
Rational choice is carried out according to actual demand.For example, above-mentioned IGBT cellular of the invention may include P-Type base area (the first conduction type
Base area 40), N+Type emitter region (the second conduction type emitter region 50), P-Type injection region (the first conductivity type implanted region 70), N+Type
Buffer area (the second conduction type buffer area) and P+Type collecting zone (the first conduction type collecting zone).
It can be seen from the above description that the above embodiments of the present invention realized the following chievements:
1, by reasonably adjusting the spacing between above-mentioned adjacent first trenches unit, and the above-mentioned second groove unit of adjustment
Spacing between middle groove can be realized the adjustment to distance between each IGBT cellular, and then make the channel grid structure
IGBT can have excellent heat dissipation consistency, and channel grid structure I GBT is enable to have high power density；
2, it is connected to due to first groove unit with the groove in second groove unit, and is filled with grid material, thus
By partly or entirely removing the grid material above substrate, to reduce in grid material, interlayer dielectric layer and emitter
Draw the parasitic capacitance generated between layer.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (12)
1. a kind of channel grid structure I GBT, including substrate and multiple IGBT cellulars, each IGBT cellular includes grid
(30), which is characterized in that there is multiple first groove units (10) and second groove unit (20) in the substrate, it is each described
The grid (30) of IGBT cellular is arranged in a one-to-one correspondence in the groove of the first groove unit (10), at least partly adjacent institute
It states first groove unit (10) to be connected to by the second groove unit (20), and the first groove unit (10) and described
Grid material (310) are filled in the groove of two trench cells (20), the grid being located in the first groove unit (10)
Pole material (310) constitutes the grid (30) of the IGBT cellular.
2. channel grid structure I GBT according to claim 1, which is characterized in that first groove unit (10) edge
First direction sequence arranges.
3. channel grid structure I GBT according to claim 1, which is characterized in that first groove unit (10) structure
At array structure, the array structure includes multiple rows of first groove unit (10) along first direction arrangement.
4. channel grid structure I GBT according to any one of claim 1 to 3, which is characterized in that adjacent each described
Spaced set between first groove unit (10), each adjacent first groove unit (10) pass through the second groove list
First (20) connection.
5. channel grid structure I GBT according to claim 3, which is characterized in that the first groove list of same row
The spacing of first (10) is H1, and the minimum spacing of the first groove unit (10) of adjacent row is L1, and L1 is less than H1, adjacent row
The first groove unit (10) by the second groove unit (20) be connected.
6. channel grid structure I GBT according to any one of claim 1 to 5, which is characterized in that each described first
Groove in trench cell (10) surrounds closed geometric figure.
7. channel grid structure I GBT according to claim 1, which is characterized in that first groove unit (10) edge
First direction sequence arranges, and the second groove unit (20) extends along the first direction and is connected to each first groove list
First (10).
8. channel grid structure I GBT according to claim 7, which is characterized in that each first groove unit (10)
In groove extend in a second direction, the second direction be different from the first direction.
9. channel grid structure I GBT according to claim 7, which is characterized in that each first groove unit (10)
Including two first grooves (110), and two first grooves (110) have a different extending directions, and preferably each described the
One end of first groove (110) described in one trench cell (10) crosses in the second groove unit (20).
10. channel grid structure I GBT according to claim 7, which is characterized in that each first groove unit
(10) include the setting of two axial symmetry first groove (110), each first groove (110) flexure type groove is preferably described
Flexure type groove is arcuate furrow, the end connection of two arcuate furrows in more preferable each first groove unit (10)
Constitute circular groove.
11. channel grid structure I GBT according to claim 1, which is characterized in that define the first groove unit
(10) there is between adjacent groove cellular region, each IGBT cellular in further include:
First conduction type base region (40) is located in the cellular region；
Second conduction type emitter region (50) is located in first conduction type base region (40) and connects with the grid (30)
Touching；
Emitter (60) is set to the side that the substrate has the grid (30), and the emitter (60) and described the
One conduction type base region (40) and the second conduction type emitter region (50) contact setting；
First conductivity type implanted region (80), defining has non-cell area, institute between the adjacent first groove unit (10)
The first conductivity type implanted region (80) are stated to be located in the non-cell area.
12. channel grid structure I GBT according to claim 11, which is characterized in that the IGBT cellular further include:
Contact hole is located in the substrate and is through to first conduction type by the second conduction type emitter region (50)
Base area (40), and the emitter (60) is filled in the contact hole；
Emitter draws layer (70), and the emitter draws layer (70) and is set to the side that the substrate has the grid (30)
And it is connect with the emitter (60).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910817842.9A CN110473918A (en) | 2019-08-30 | 2019-08-30 | Channel grid structure I GBT |
| CN202010108349.2A CN111162123B (en) | 2019-08-30 | 2020-02-21 | Trench type gate structure IGBT |
| PCT/CN2020/112615 WO2021037268A1 (en) | 2019-08-30 | 2020-08-31 | Trench gate structure igbt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910817842.9A CN110473918A (en) | 2019-08-30 | 2019-08-30 | Channel grid structure I GBT |
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| CN110473918A true CN110473918A (en) | 2019-11-19 |
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| CN202010108349.2A Active CN111162123B (en) | 2019-08-30 | 2020-02-21 | Trench type gate structure IGBT |
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| CN202010108349.2A Active CN111162123B (en) | 2019-08-30 | 2020-02-21 | Trench type gate structure IGBT |
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Cited By (1)
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| WO2021037268A1 (en) * | 2019-08-30 | 2021-03-04 | 丽晶美能（北京）电子技术有限公司 | Trench gate structure igbt |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113421920A (en) * | 2021-06-02 | 2021-09-21 | 广东美的白色家电技术创新中心有限公司 | IGBT device, preparation method thereof and electronic product |
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| DE59814430D1 (en) * | 1998-12-18 | 2010-03-25 | Infineon Technologies Ag | FIELD EFFECT TRANSISTOR ARRANGEMENT WITH A TRIANGULAR GATE ELECTRODE AND AN ADDITIONAL HIGH DEFINED LAYER IN THE BODY FIELD |
| JP3703816B2 (en) * | 2003-06-18 | 2005-10-05 | 株式会社東芝 | Semiconductor device |
| JP2011124464A (en) * | 2009-12-14 | 2011-06-23 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
| US9666666B2 (en) * | 2015-05-14 | 2017-05-30 | Alpha And Omega Semiconductor Incorporated | Dual-gate trench IGBT with buried floating P-type shield |
| CN104183634B (en) * | 2014-09-16 | 2017-07-21 | 株洲南车时代电气股份有限公司 | A kind of trench gate igbt chip |
| CN104882477B (en) * | 2015-06-03 | 2018-04-06 | 杭州士兰集成电路有限公司 | Trench gate IGBT device and its manufacture method |
| JP6930858B2 (en) * | 2017-05-24 | 2021-09-01 | 株式会社東芝 | Semiconductor device |
| CN110473918A (en) * | 2019-08-30 | 2019-11-19 | 丽晶美能（北京）电子技术有限公司 | Channel grid structure I GBT |
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- 2019-08-30 CN CN201910817842.9A patent/CN110473918A/en active Pending
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| WO2021037268A1 (en) * | 2019-08-30 | 2021-03-04 | 丽晶美能（北京）电子技术有限公司 | Trench gate structure igbt |
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| CN111162123A (en) | 2020-05-15 |
| CN111162123B (en) | 2022-04-22 |
| WO2021037268A1 (en) | 2021-03-04 |
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Application publication date: 20191119 |