CN110473831A - The manufacturing method of chip - Google Patents

The manufacturing method of chip Download PDF

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Publication number
CN110473831A
CN110473831A CN201910366835.1A CN201910366835A CN110473831A CN 110473831 A CN110473831 A CN 110473831A CN 201910366835 A CN201910366835 A CN 201910366835A CN 110473831 A CN110473831 A CN 110473831A
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CN
China
Prior art keywords
machined object
chip
laser beam
segmentation
machining process
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Granted
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CN201910366835.1A
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Chinese (zh)
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CN110473831B (en
Inventor
淀良彰
赵金艳
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Doshika Inc
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Doshika Inc
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Publication of CN110473831A publication Critical patent/CN110473831A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element

Abstract

The manufacturing method of chip is provided, the machined object of plate can be split without using extension piece and produces multiple chips.The manufacturing method of the chip includes following step: the 1st laser machining process, only irradiates the laser beam for the wavelength for having permeability for machined object to chip area along segmentation preset lines, forms the 1st modification layer of the segmentation preset lines along chip area；2nd laser machining process has machined object along the irradiation of the boundary of chip area and periphery remaining area the laser beam of the wavelength of permeability, is formed and modify layer along the 2nd of the boundary；And segmentation step, power is assigned to machined object and machined object is divided into each chip, and in segmentation step, machined object is divided into each chip and heating and cooling down to assign power.

Description

The manufacturing method of chip
Technical field
The present invention relates to the manufacturing methods of chip, are split to the machined object of plate and produce multiple chips.
Background technique
In order to be divided into multiple chips by the machined object (workpiece) of the plate of representative of chip, there is known following sides Method: making the laser beam with permeability be focused at the inside of machined object, forms the modification layer being upgraded by Multiphoton Absorbtion (modified region) (referring for example to patent document 1).Modify layer it is crisp than other regions, therefore by along divide preset lines ( Every road) it is formed after modification layer to machined object applied force, so as to be divided into machined object as starting point using the modification layer Multiple chips.
When to the machined object applied force for being formed with modification layer, for example, by using the extension piece (extension that will have extensibility Band) it is pasted onto the method on machined object and being extended (referring for example to patent document 2).In the method, it is usually irradiating Laser beam and in machined object formed modification layer before, will extension piece be pasted on machined object, then formed modify layer Extension piece is extended later and machined object is divided into multiple chips.
Patent document 1: Japanese Unexamined Patent Publication 2002-192370 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2010-206136 bulletin
But in the method as described above being extended to extension piece, the extension piece after use can not be reused, Therefore expense needed for manufacture chip is also easy to increase.It is not easy to remain in the high-performance on chip especially as adhesives Extension piece, price is also high, therefore when using such extension piece, and expense needed for manufacture chip also increases.
Summary of the invention
The present invention is completed in view of the problem, and its purpose is to provide the manufacturing methods of chip, without using extension Piece and the machined object of plate can be split and produce multiple chips.
According to one method of the present invention, the manufacturing method of chip is provided, from chip area and around the chip region The machined object of the periphery remaining area in domain produces multiple chips, and the chip area is drawn by a plurality of segmentation preset lines intersected It is divided into the multiple regions that will become the chip, the manufacturing method of the chip is characterized in that thering is following step: keeping step Suddenly, directly machined object is kept using holding workbench；1st laser machining process, implement the holding step it Afterwards, it is positioned at the holding workbench according to by the focal point of the laser beam of the wavelength for machined object with permeability and is kept The mode of inside of machined object the laser beam, edge only are irradiated to the chip area of machined object along the segmentation preset lines The segmentation preset lines of the chip area form the 1st modification layer, and change using the periphery remaining area as the not formed 1st The reinforcement part of matter layer；2nd laser machining process, it is saturating according to that will have for machined object after implementing the holding step The focal point of the laser beam of the wavelength for the property crossed be positioned at the mode of the inside for the machined object that the holding workbench is kept along The laser beam is irradiated on the boundary of the chip area and the periphery remaining area, forms the 2nd modification layer along the boundary；Move out step Suddenly, after implementing the 1st laser machining process and the 2nd laser machining process, by machined object from the holding workbench It moves out；And segmentation step assigns power to machined object and is divided into machined object respectively after implementing this and moving out step Machined object is divided into each chip and heating and cooling down to assign the power in the segmentation step by a chip.
In one embodiment of the present invention, step can be also removed with following reinforcement part: implement the 1st laser After procedure of processing and the 2nd laser machining process and before implementing the segmentation step, which is removed.In addition, In one embodiment of the present invention, the upper surface for being also possible to the holding workbench is made of soft material, is walked in the holding In rapid, the face side of machined object is kept using the material of the softness.
In the manufacturing method of the chip of one embodiment of the present invention, using keep workbench directly to machined object into In the state that row is kept, laser beam only is irradiated to the chip area of machined object and forms the 1st modification along segmentation preset lines Layer irradiates laser beam to the boundary of chip area and periphery remaining area and is formed and modify layer along the 2nd of boundary, then utilizes Heating and it is cooling machined object is divided into each chip assigning power, there is no need to use extension piece to apply machined object It reinforces and is divided into each chip.In this way, the manufacturing method of chip according to one method of the present invention, without using extension Piece and the machined object as plate machined object can be split and produce multiple chips.
In addition, only being irradiated to the chip area of machined object in the manufacturing method of the chip of one embodiment of the present invention Laser beam and form the 1st modification layer along segmentation preset lines, and using periphery remaining area as not formed 1st modification layer Reinforcement part, therefore chip area is reinforced by the reinforcement part.Machined object will not be by being applied in conveying etc. as a result, The power that adds and be divided into each chip, can suitably transport silicon wafer.
Detailed description of the invention
Fig. 1 is the perspective view for schematically showing the structural example of machined object.
Fig. 2 is the perspective view for schematically showing the structural example of laser processing device.
(A) of Fig. 3 is for the cross-sectional view for keeping step to be illustrated, (B) of Fig. 3 to be for laser machining process The cross-sectional view being illustrated.
Fig. 4 is the cross-sectional view for being illustrated to the 2nd laser machining process.
(A) of Fig. 5 is the top view for schematically showing the state of the machined object after forming modification layer, and (B) of Fig. 5 is to show Meaning property shows the cross-sectional view of the state of modification layer.
Fig. 6 is the cross-sectional view for being illustrated to reinforcement part removal step.
Fig. 7 is the cross-sectional view for being illustrated to segmentation step.
Fig. 8 is the cross-sectional view being illustrated for the holding step to variation.
(A) of Fig. 9 is the cross-sectional view being illustrated for the segmentation step to variation, and (B) of Fig. 9 is to schematically show The top view of the state of machined object before being split by the segmentation step of variation to chip area.
Label declaration
11: machined object (workpiece)；11a: front；11b: the back side；11c: chip area；11d: periphery remaining area；13: Divide preset lines (spacing track)；15: region；17: laser beam；19,19a, 19b, 19c, 19d: modification layer；21: fluid；23: splitting Line；25: chip；2: laser processing device；4: base station；6: chuck table (keeps workbench)；6a: retaining surface；6b: attract Road；8: horizontal mobile mechanism；10:X axis rail；12:X axis mobile work platform；14:X axis ball-screw；16:X axis pulse electric Machine；18:X axis scale；20:Y axis rail；22:Y axis mobile work platform；24:Y axis ball-screw；26:Y axis pulse motor；28: Y-axis scale；30: supporting station；32: valve；34: attracting source；36: supporting construction；38: supporting arm；40: laser beam irradiation unit；42: phase Machine；44: sheet material (porous sheet)；44a: upper surface；52: segmenting device；54: chuck table (keeps workbench)；54a: it protects Hold face；54b: attraction road；54c: heater (heating unit)；56: valve；58: attracting source；60: nozzle (cooling unit)；62: cutting Cut unit；64: cutting tool.
Specific embodiment
Referring to attached drawing, the embodiment of one embodiment of the present invention is illustrated.The manufacture of the chip of present embodiment Method includes: keeping step (referring to (A) of Fig. 3), the 1st laser machining process ((B) referring to Fig. 3 etc.), the 2nd laser processing step Suddenly (referring to Fig. 4 etc.), move out step, reinforcement part removal step (referring to Fig. 6) and segmentation step (referring to Fig. 7).
In keeping step, using chuck table (keeping workbench) directly to more with being divided by segmentation preset lines The machined object (workpiece) of the chip area in a region and the periphery remaining area around chip area is kept.Swash the 1st In light procedure of processing, the laser beam for the wavelength that there is permeability for machined object is irradiated, it is predetermined along the segmentation of chip area Line forms modification layer (the 1st modification layer), and using periphery remaining area as the reinforcement part of not formed modification layer.
In the 2nd laser machining process, the laser beam for the wavelength that there is permeability for machined object is irradiated, along chip Region and the boundary of periphery remaining area form modification layer (the 2nd modification layer).In moving out step, by machined object from keep work It is moved out as platform.In reinforcement part removal step, reinforcement part is removed from machined object.In segmentation step, using adding hot and cold But machined object is divided into multiple chips to assign power.Hereinafter, being carried out to the manufacturing method of the chip of present embodiment detailed It describes in detail bright.
Fig. 1 is the perspective view for schematically showing the structural example of the machined object (workpiece) 11 used in the present embodiment. As shown in Figure 1, machined object 11 is, for example, by silicon (Si), GaAs (GaAs), indium phosphide (InP), gallium nitride (GaN), carbonization The semiconductors such as silicon (SiC)；Sapphire (Al2O3), soda-lime glass, pyrex, the dielectrics (insulator) such as quartz glass；Or Person's lithium tantalate (LiTaO3), lithium niobate (LiNbO3) etc. strong dielectrics (strong dielectric crystallization) formed discoid chip (base Plate).
The positive side 11a of machined object 11 is divided by a plurality of segmentation preset lines (spacing track) 13 intersected will become core The multiple regions 15 of piece.In addition, the generally circular area including all multiple regions 15 that will become chip will be included below Domain is referred to as chip area 11c, will be referred to as periphery remaining area 11d around the cricoid region of chip area 11c.
Each region 15 in chip area 11c is formed with IC (Integrated Circuit: integrated electricity as needed Road), MEMS (Micro Electro Mechanical Systems: MEMS), LED (Light Emitting Diode: light emitting diode), LD (Laser Diode: laser diode), photodiode (Photodiode), SAW (Surface Acoustic Wave: surface acoustic wave) filter, BAW (Bulk Acoustic Wave: body elasticity wave) filtering The devices such as device.
The machined object 11 is split along segmentation preset lines 13, to obtain multiple chips.Specifically, in quilt In the case that machining object 11 is silicon wafer, obtain such as the chip functioned memory or sensor.It is being processed In the case that object 11 is GaAs substrate, indium phosphide substrate, gallium nitride base board, obtain for example as light-emitting component or light receiving element Etc. the chip functioned.
In the case where machined object 11 is silicon carbide substrate, obtain such as the core functioned power device Piece.In the case where machined object 11 is sapphire substrate, obtain such as the chip functioned light-emitting component.In quilt In the case that machining object 11 is the glass substrate by formation such as soda-lime glass, pyrex, quartz glass, such as conduct is obtained The chip that optical component or cover member (cloche) function.
It is strong dielectric substrate (the strong dielectric knot formed by strong dielectrics such as lithium tantalate, lithium niobates in machined object 11 Brilliant substrate) in the case where, it obtains such as the chip functioned filter or actuator.In addition, for machined object There is no limit for 11 material, shape, construction, size, thickness etc..It will be as the region 15 of chip similarly, for being formed in Type, quantity, shape, construction, size, the configuration of device etc. also there is no limit.It can not also be in the area that will become chip Domain 15 forms device.
In the manufacturing method of the chip of present embodiment, use discoid silicon wafer as machined object 11, manufacture Multiple chips out.Specifically, carrying out holding step first, directly the machined object 11 is protected using chuck table It holds.Fig. 2 is the perspective view for schematically showing the structural example of the laser processing device used in the present embodiment.
As shown in Fig. 2, laser processing device 2 has the base station 4 for carrying each component.It is set on the upper surface of base station 4 It is equipped with horizontal mobile mechanism 8, which is used in attraction, the chuck table of machined object 11 is kept (to keep work Make platform) it 6 is moved in X-direction (processing direction of feed) and Y direction (index feed direction).Horizontal mobile mechanism 8 has A pair of of X-axis guide rail 10, they are fixed on the upper surface of base station 4, substantially parallel with X-direction.
X-axis moving table 12 is installed in a manner of it can slide in X-axis guide rail 10.In X-axis moving table 12 Back side (lower face side) be provided with nut portions (not shown), be screwed in the nut portions substantially parallel with X-axis guide rail 10 X-axis ball-screw 14.
X-axis pulse motor 16 is linked in an end of X-axis ball-screw 14.Make X using X-axis pulse motor 16 Axis ball-screw 14 rotates, so that X-axis moving table 12 moves in the X-axis direction along X-axis guide rail 10.With X-axis guide rail 10 adjacent positions are provided with X-axis scale 18, and the X-axis scale 18 is for the position to X-axis moving table 12 in the X-axis direction It is detected.
A pair of of the Y-axis guide rail substantially parallel with Y direction is fixed on the front (upper surface) of X-axis moving table 12 20.Y-axis moving table 22 is installed in a manner of it can slide in Y-axis guide rail 20.At the back side of Y-axis moving table 22 Side (lower face side) is provided with nut portions (not shown), is screwed in the nut portions and rolls with the substantially parallel Y-axis of Y-axis guide rail 20 Ballscrew 24.
Y-axis pulse motor 26 is linked in an end of Y-axis ball-screw 24.Make Y using Y-axis pulse motor 26 Axis ball-screw 24 rotates, so that Y-axis moving table 22 moves in the Y-axis direction along Y-axis guide rail 20.With Y-axis guide rail 20 adjacent positions are provided with Y-axis scale 28, and the Y-axis scale 28 is for the position to Y-axis moving table 22 in the Y-axis direction It is detected.
The face side (upper surface side) of Y-axis moving table 22 is provided with supporting station 30, on the top of the supporting station 30 Configured with chuck table 6.The front (upper surface) of chuck table 6 as to above-mentioned machined object 11 the back side side 11b (or The positive side 11a) the retaining surface 6a that is attracted, kept.Retaining surface 6a is for example by the porous material structure with high hardness such as aluminium oxide At.But retaining surface 6a can also be by being constituted by the soft material of representative of resins such as polyethylene or epoxies.
Attraction road 6b (referring to (A) etc. of Fig. 3) and valve 32 of the retaining surface 6a through the formation of the inside of chuck table 6 (referring to Fig. 3 (A) etc.) etc. and with attract source 34 (referring to (A) etc. of Fig. 3) connect.It is provided in the lower section of chuck table 6 Rotary driving source (not shown), chuck table 6 are revolved by the rotary driving source around with the substantially parallel rotary shaft of Z-direction Turn.
The rear of horizontal mobile mechanism 8 is provided with columnar supporting construction 36.It is fixed on the top of supporting construction 36 The supporting arm 38 extended in the Y-axis direction is provided with laser beam irradiation unit 40 in the front end of the supporting arm 38, the laser irradiation 40 impulse hunting of unit goes out the laser beam 17 for the wavelength (being not easy absorbed wavelength) for having permeability for machined object 11 (referring to (B) of Fig. 3) and expose to the machined object 11 on chuck table 6.
The position adjacent with laser beam irradiation unit 40 is provided with camera 42, front of the camera 42 to machined object 11 The side 11a or the back side side 11b are shot.Such as when adjusting the position etc. of machined object 11 and laser beam irradiation unit 40, use The image that machined object 11 etc. is shot using camera 42 and is formed.
Constituent elements and the control units such as chuck table 6, horizontal mobile mechanism 8, laser beam irradiation unit 40, camera 42 Connection (not shown).Control unit controls each component, suitably to process to machined object 11.
(A) of Fig. 3 is for the cross-sectional view for keeping step to be illustrated.In addition, in (A) of Fig. 3, by a part Constituent element is indicated with functional block.Keep step in, as shown in (A) of Fig. 3, for example, make machined object 11 back side 11b and The retaining surface 6a of chuck table 6 is contacted.Then, valve 32 is opened, makes the suction function in attraction source 34 in retaining surface 6a.
Machined object 11 is attracted in the state that the positive side 11a is exposed to top, is held in chuck table 6 as a result, On.In addition, in the present embodiment, the back side as shown in (A) of Fig. 3, using chuck table 6 directly to machined object 11 The side 11b is kept.That is, in the present embodiment, without pasting extension piece to machined object 11.
After the holding step, it carries out irradiating laser beam 17 along segmentation preset lines 13 and formation modification layer (the 1st modification Layer) the 1st laser machining process and along chip area 11c and periphery remaining area 11d boundary irradiation laser beam 17 and Form the 2nd laser machining process of modification layer (the 2nd modification layer).In addition, in the present embodiment, being walked in the 1st laser processing The case where 2 laser machining process is carried out after rapid is illustrated.
(B) of Fig. 3 is the cross-sectional view for being illustrated to the 1st laser machining process, and Fig. 4 is for adding to the 2nd laser The cross-sectional view that work step is illustrated suddenly, (A) of Fig. 5 are to schematically show the state to form the machined object 11 after modification layer 19 Top view, (B) of Fig. 5 be schematically show modification layer 19 state cross-sectional view.In addition, in (B) and Fig. 4 of Fig. 3, it will The constituent element of a part is indicated with functional block.
In the 1st laser machining process, first rotate chuck table 6, such as make the segmentation preset lines as object 13 extending direction is parallel with X-direction.Then, make chuck table 6 mobile and make the aligned in position of laser beam irradiation unit 40 In the extended line as the segmentation preset lines 13 of object.Then, as shown in (B) of Fig. 3, make chuck table 6 in X-direction It is moved on (that is, direction that the segmentation preset lines 13 as object extend).
Then, two positions being present in the segmentation preset lines 13 as object are reached according to laser beam irradiation unit 40 Chip area 11c and periphery remaining area 11d boundary in a side surface opportunity, from the laser beam irradiation unit 40 Start to irradiate the laser beam 17 for the wavelength that there is permeability for machined object 11.In the present embodiment, such as (B) institute of Fig. 3 Show, the positive 11a from configuration in laser beam irradiation unit 40 towards the machined object 11 of the top of machined object 11 irradiates laser beam 17。
The irradiation of the laser beam 17 continues to laser beam irradiation unit 40 to reach the segmentation preset lines being present in as object Until the surface of another party in the boundary of the chip area 11c and periphery remaining area 11d at two positions on 13.That is, Here, along the segmentation preset lines 13 as object only to irradiation laser beam 17 in chip area 11c.
In addition, distance front 11a (or the back side of the laser beam 17 according to the inside that focal point is positioned to machined object 11 11b) mode of the position of prescribed depth is irradiated.In this way, making the laser for the wavelength that there is permeability for machined object 11 Beam 17 is focused at the inside of machined object 11, so as in focal point and its nearby by Multiphoton Absorbtion to machined object 11 A part modified, form the modification layer 19 (modify layer 19a etc.) as the starting point of segmentation.
In the 1st laser machining process of present embodiment, along the segmentation preset lines 13 as object only to chip region Laser beam 17 is irradiated in the 11c of domain, therefore modification layer is only formed in chip area 11c along the segmentation preset lines 13 as object 19.That is, in the 1st laser machining process, not forming modification layer 19 in periphery remaining area as shown in (B) of Fig. 5.
After foring modification layer 19 in the position of prescribed depth along the segmentation preset lines 13 as object, according to same The step of sample, forms modification layer 19 in the position of other depth along the segmentation preset lines 13 as object.In present embodiment In, as shown in (B) of Fig. 5, such as three positions different in the depth of the positive 11a (or back side 11b) apart from machined object 11 It sets to form modification layer 19 (modification layer 19a, modification layer 19b, modification layer 19c).
But, it is limited for dividing the quantity for modifying layer 19, the no especially system in position that preset lines 13 are formed along one.Example The quantity for such as dividing the modification layer 19 that preset lines 13 are formed along one can be one.Additionally, it is desirable to be reached just according to crackle The condition of face 11a (or back side 11b) forms the modification layer 19.It is of course also possible to reach front 11a and back side 11b according to crackle The condition of this both sides forms modification layer 19.Thereby, it is possible to more suitably be split to machined object 11.
After foring required amount of modification layer 19 along the segmentation preset lines 13 as object, above-mentioned step is repeated Suddenly, modification layer 19 is formed along other all segmentation preset lines 13.When (A) of such as Fig. 5 is shown along all segmentation preset lines When the 13 required amount of modification layer 19 of formation, the 1st laser machining process terminates.
In addition, foring required amount of modification along a segmentation preset lines 13 in the 1st laser machining process After layer 19, same modification layer 19 is formed along other segmentation preset lines 13, but do not have for the sequence etc. for forming modification layer 19 There is special limitation.Such as modification layer 19 can also be formed in the position of the same depth of all segmentation preset lines 13, then exist The position of other depth forms modification layer 19.
In the case where machined object 11 is silicon wafer, such as modification layer 19 is formed under the conditions of following such.
Machined object: silicon wafer
The wavelength of laser beam: 1340nm
The repetition rate of laser beam: 90kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: 180mm/s~1000mm/s, typically 500mm/s
In the case where machined object 11 is GaAs substrate or indium phosphide substrate, such as shape under the conditions of following such At modification layer 19.
Machined object: GaAs substrate, indium phosphide substrate
The wavelength of laser beam: 1064nm
The repetition rate of laser beam: 20kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: 100mm/s~400mm/s, typically 200mm/s
In the case where machined object 11 is sapphire substrate, such as modification layer 19 is formed under the conditions of following such.
Machined object: sapphire substrate
The wavelength of laser beam: 1045nm
The repetition rate of laser beam: 100kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: 400mm/s~800mm/s, typically 500mm/s
In the case where machined object 11 is the strong dielectric substrate formed by strong dielectrics such as lithium tantalate or lithium niobates, example Modification layer 19 is formed under the conditions of as following.
Machined object: lithium tantalate substrate, lithium niobate substrate
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 15kHz
The output of laser beam: 0.02W~0.2W
The movement speed (processing feed speed) of chuck table: 270mm/s~420mm/s, typically 300mm/s
In the case where machined object 11 is the glass substrate by formation such as soda-lime glass, pyrex, quartz glass, Such as modification layer 19 is formed under the conditions of following such.
Machined object: soda-lime glass substrate, pyrex substrate, quartz glass substrate
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 50kHz
The output of laser beam: 0.1W~2W
The movement speed (processing feed speed) of chuck table: 300mm/s~600mm/s, typically 400mm/s
In the case where machined object 11 is gallium nitride base board, such as modification layer 19 is formed under the conditions of following such.
Machined object: gallium nitride base board
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 25kHz
The output of laser beam: 0.02W~0.2W
The movement speed (processing feed speed) of chuck table: 90mm/s~600mm/s, typically 150mm/s
In the case where machined object 11 is silicon carbide substrate, such as modification layer 19 is formed under the conditions of following such.
Machined object: silicon carbide substrate
The wavelength of laser beam: 532nm
The repetition rate of laser beam: 25kHz
The output of laser beam: 0.02W~0.2W, typically 0.1W
The movement speed (processing feed speed) of chuck table: 90mm/s~600mm/s, it is typically: in silicon carbide It is 90mm/s on the cleavage direction of substrate, on non-cleavage direction is 400mm/s
In the 1st laser machining process of present embodiment, only formed in chip area 11c along segmentation preset lines 13 Layer 19 (modification layer 19a, 19b, 19c) is modified, does not form modification layer 19 in periphery remaining area 11d, therefore surplus by the periphery Remaining region 11d ensures the intensity of machined object 11.As a result, machined object 11 will not by the power that is applied in conveying etc. and by It is divided into each chip.In this way, periphery remaining area 11d after the 1st laser machining process be used as to chip area 11c into The reinforcement part that row is reinforced functions.
In addition, modification layer 19 is not formed in periphery remaining area 11d in the 1st laser machining process of present embodiment, Even if therefore for example reaching front 11a and this both sides of back side 11b in the crackle extended from modification layer 19, machined object 11 is complete Under the situation divided entirely, each chip will not fall off, is discrete.In general, when forming modification layer 19 in machined object 11, at this Machined object 11 can expand near modification layer 19.In the present embodiment, the ring functioned as reinforcement part is utilized The periphery remaining area 11d of shape acts on the power of the expansion generated due to forming modification layer 19 inwardly, to choke each chip And it prevents it from falling off, is discrete.
After the 1st above-mentioned laser machining process, the 2nd laser machining process is carried out.In the 2nd laser machining process In, make chuck table 6 mobile first and makes the aligned in position of laser beam irradiation unit 40 in chip area 11c and periphery remaining area On the boundary line of domain 11d.Then, it is penetrated as shown in figure 4, having on one side from the irradiation of laser beam irradiation unit 40 for machined object 11 Property wavelength laser beam 17, make on one side chuck table 6 rotate.That is, in the present embodiment, from being configured at machined object 11 Top laser beam irradiation unit 40 towards machined object 11 positive 11a irradiate laser beam 17.
The laser beam 17 according to the inside that focal point is positioned to machined object 11 distance front 11a (or back side 11b) The mode of the position of prescribed depth is irradiated.In this way, making the laser beam 17 for the wavelength that there is permeability for machined object 11 It is focused at the inside of machined object 11, so as in focal point and its nearby by Multiphoton Absorbtion to the one of machined object 11 Part is modified, and the modification layer 19 (modification layer 19d) of the starting point as segmentation is formed.
In the 2nd laser machining process of present embodiment, along the side of chip area 11c and periphery remaining area 11d Laser beam 17 is irradiated on boundary, therefore forms modification layer 19 along the boundary.In addition, for remaining along chip area 11c and periphery The boundary of region 11d is formed by the quantity of modification layer 19, position is not particularly limited.Such as it can make along boundary formation The quantity for modifying layer 19 is two or more.
Additionally, it is desirable to form the modification layer along the boundary according to the condition that crackle reaches front 11a (or back side 11b) 19.It is of course also possible to form the modification layer 19 along boundary according to the condition that crackle reaches this both sides of front 11a and back side 11b. Thereby, it is possible to more suitably be split to machined object 11, periphery remaining area 11d can be made to separate from chip area 11c.
Actual conditions etc. for being used to form modification layer 19 in the 2nd laser machining process are not particularly limited.For example, Changing along boundary can be formed according to condition identical with the modification condition of layer 19 is used to form in the 1st laser machining process Matter layer 19.It is of course also possible to according to the condition shape different from the modification condition of layer 19 is used to form in the 1st laser machining process At the modification layer 19 along boundary.
As shown in (A) of Fig. 5 and (B) of Fig. 5, formed when along chip area 11c and the boundary of periphery remaining area 11d When cricoid modification layer 19 (modification layer 19d), the 2nd laser machining process terminates.In addition, in the present embodiment, swashing with the 1st The position of the depth of modification layer 19 formed in light procedure of processing (modification layer 19b) same degree forms modification layer 19 and (changes Matter layer 19d), so that crackle is reached front 11a and back side 11b from the modification layer 19 (modification layer 19d).
It after the 1st laser machining process and the 2nd laser machining process, carries out moving out step, by machined object 11 from card Disk workbench 6 moves out.Specifically, for example using can be inhaled to the entire front 11a (or back side 11b) of machined object 11 After transport unit (not shown) that is attached, keeping adsorbs the entire front 11a of machined object 11, valve 32 is closed, is cut The negative pressure in disconnected attraction source 34, machined object 11 is moved out.In addition, in the present embodiment, as described above, periphery remaining area 11d is functioned as reinforcement part, therefore machined object 11 will not be divided into each by the power that is applied in conveying etc. A chip can suitably transport machined object 11.
After moving out step, carries out reinforcement part and remove step, reinforcement part is removed from machined object 11.Fig. 6 is to be used for The cross-sectional view that reinforcement part removal step is illustrated.In addition, the constituent element of a part is indicated with functional block in Fig. 6. Reinforcement part removal step is for example carried out using segmenting device 52 shown in fig. 6.
Segmenting device 52 has the chuck table (keeping workbench) for being attracted machined object 11, being kept 54.A part of the upper surface of the chuck table 54 is attracted as the chip area 11c to machined object 11, is kept Retaining surface 54a.Retaining surface 54a through the formation of the attraction road 54b of the inside of chuck table 54 and valve 56 etc. and with attract source 58 connections.In addition, configuring having heaters (heating unit) 54c in the lower section of retaining surface 54c.
The rotary driving sources such as the chuck table 54 and motor connection (not shown), around substantially parallel with vertical direction Rotary shaft rotation.In addition, chuck table 54 is supported by mobile mechanism (not shown), relative to above-mentioned retaining surface It is moved on 54a substantially parallel direction.
In reinforcement part removal step, make the back side 11b of machined object 11 and the retaining surface 54a of chuck table 54 first Contact.Then, valve 56 is opened, makes the suction function in attraction source 58 in retaining surface 54a.Machined object 11 is in positive 11a as a result, Lateral top is attracted in the state of exposing, is held on chuck table 54.In addition, in the present embodiment, such as Fig. 6 institute Show, directly the back side side 11b of machined object 11 is kept using chuck table 54.That is, here without to processed Object 11 pastes extension piece.
Then, upward power (power of the direction far from retaining surface 54a) is acted on to periphery remaining area 11d.As it is above-mentioned that Sample is formed with (the modification layer of modification layer 19 of the starting point as segmentation on the boundary of chip area 11c and periphery remaining area 11d 19d).Therefore by acting on upward power to periphery remaining area 11d, as shown in fig. 6, can by periphery remaining area 11d from Chuck table 54 lifts and removes.The chip area 11c of machined object 11 is only remained on chuck table 54 as a result,.
After reinforcement part removes step, it is split step, machined object 11 is divided into each chip.It is specific and Speech is divided machined object 11 and heating and cooling down to generate stress.Fig. 7 is cutd open for what is be illustrated to segmentation step View.In addition, the constituent element of a part is indicated with functional block in Fig. 7.
Segmentation step continues to use segmenting device 52 to carry out.As shown in fig. 7, segmenting device 52 also has configuration in chuck The nozzle (cooling unit) 60 of the top of workbench 54.In the segmentation step of present embodiment, chuck work is set to utilizing Make platform 54 heater 54c machined object 11 is heated after, mention fluid 21 for cooling from the nozzle 60 and to quilt Machining object 11 is cooled down, thus stress needed for generating the segmentation of machined object 11.
As cooling fluid 21, the gases such as the liquid such as water or air can be used for example.Use liquid as stream In the case where body 21, it can also be pre-cooled according to the degree for freezing the liquid to lower temperature (for example, comparing freezing point 0.1 DEG C high~10 DEG C or so of temperature).Wherein, the type of fluid 21, flow, temperature etc. are not particularly limited.Such as it can To use the liquid of the low temperature such as the liquid nitrogen that can further absorb heat by gasification.
It is for cooling when being mentioned after making heater 54c be acted and be heated to machined object 11 from nozzle 60 Fluid 21 and when being cooled down to machined object 11, due to generating the stress in the inside of machined object 11, crackle 23 is from modification Layer 19 (modification layer 19a, 19b, 19c) extends.Machined object 11 is divided into multiple chips along segmentation preset lines 13 as a result, 25。
Heating and cooling condition (temperature, time etc.) are set according to the type etc. of machined object 11.Additionally, it is desirable to Repeat cooling of the heater 54c to the heating of machined object 11 and the liquid 21 provided from nozzle 60 to machined object 11 Until machined object 11 is suitably divided.
In this way, in the present embodiment, required power is assigned by heating and cooling down, machined object 11 can be divided At each chip 25.In addition, in the present embodiment, cooled down after being heated to machined object 11, but can also be with It is heated after being cooled down to machined object 11.The method for heating and cooling down is not particularly limited.
As described above, utilizing chuck table (keeping workbench) 6 in the manufacturing method of the chip of present embodiment In the state of directly keeping to machined object (workpiece) 11, laser beam only is irradiated to the chip area 11c of machined object 11 17 and form the modification layer 19 (modification layer 19a, 19b, 19c) along segmentation preset lines 13, it is remaining to chip area 11c and periphery The boundary of region 11d irradiates laser beam 17 and forms the modification layer 19 (modification layer 19d) along boundary, then by adding hot and cold But machined object 11 is divided into each chip 25 to assign power, there is no need in order to divide 11 applied force of machined object Extension piece is used at each chip 25.In this way, the manufacturing method of chip according to the present embodiment, the energy without using extension piece It is enough that the silicon wafer of the machined object 11 as plate is split and produces multiple chips 25.
In addition, only irradiating and swashing to the chip area 11c of machined object 11 in the manufacturing method of the chip of present embodiment Light beam 17 and form the modification layer 19 (modification layer 19a, 19b, 19c) along segmentation preset lines 13, and by periphery remaining area Reinforcement part of the 11d as not formed modification layer 19 (modification layer 19a, 19b, 19c), therefore by the reinforcement part to chip area 11c is reinforced.Machined object 11 will not be divided into each chip 25 by the power that is applied in conveying etc. as a result, Machined object 11 can suitably be transported.
In addition, the record that the present invention is not limited to the above embodiments waits, various modifications may be made and implements.Such as upper It states in embodiment, the 2nd laser machining process is carried out after the 1st laser machining process, but can also be in the 2nd laser processing step The 1st laser machining process is carried out after rapid.Alternatively, it is also possible to carry out the 2nd laser processing step in the midway of the 1st laser machining process Suddenly.
In addition, in the above-described embodiment, directly being carried out to the back side side 11b of machined object 11 using chuck table 6 It keeps, irradiates laser beam 17 from the positive side 11a, but also can use chuck table 6 directly to the positive 11a of machined object 11 Side is kept, and irradiates laser beam 17 from the back side side 11b.
Fig. 8 is the cross-sectional view being illustrated for the holding step to variation.In the holding step of the variation, such as Shown in Fig. 8, chuck table (the holding work that upper surface is made of the sheet material (porous sheet) 44 of Porous shape can be used for example Make platform) 6, the sheet material of the Porous shape by the soft material of representative of resins such as polyethylene or epoxies by forming.
In the chuck table 6, the positive side 11a of machined object 11 is inhaled using the upper surface 44a of sheet material 44 Draw, keep.It is damaged thereby, it is possible to prevent device for being formed in the positive side 11a etc. from occurring.The sheet material 44 is chuck table 6 A part is reused together with the main body of chuck table 6 etc..
But the upper surface of chuck table 6 is the sheet material 44 of above-mentioned Porous shape without being made of, as long as at least according to The positive side 11a for not damaging machined object 11 is formed by the degree of device etc. and is made of soft material.Additionally, it is desirable to Sheet material 44 is configured to be loaded and unloaded relative to the main body of chuck table 6, is able to carry out more there is a situation where damaged etc. It changes.
In addition, in the above-described embodiment, reinforcement part removal step is carried out after moving out step and before segmentation step Suddenly, but for example reinforcement part can also be carried out before moving out step after the 1st laser machining process and the 2nd laser machining process Remove step.In addition, being not necessarily in the case where carrying out reinforcement part removal step after moving out step and before segmentation step Machined object 11 is transported after reinforcement part removes step, therefore is easy to avoid suitably transporting machined object 11 Deng unfavorable condition.
It is equally possible that carrying out reinforcement part after segmentation step removes step.In this case, by segmentation step The thermal shock assigned in rapid, is more reliably split chip area 11c and periphery remaining area 11d, therefore later Reinforcement part removal step in more easily reinforcement part can be removed.
Alternatively, it is also possible to omit reinforcement part removal step.In this case, for example, it is adjustable pass through the 1st laser processing Step and the 2nd laser machining process form the range of modification layer 19, to become the width of reinforcement part apart from machined object 11 Outer peripheral edge 2mm~3mm or so.In addition, for example can also before being split by segmentation step to chip area 11c, The slot of the starting point as segmentation is formed to reinforcement part.
(A) of Fig. 9 is the cross-sectional view being illustrated for the segmentation step to variation, and (B) of Fig. 9 is to schematically show The top view of the state of machined object 11 before being split by the segmentation step of variation to chip area 11c.Becoming In the segmentation step of shape example, before machined object 11 is divided into each chip using segmenting device 52, such as setting is used The slot of the starting point as segmentation is formed to reinforcement part in the cutting unit 62 of segmenting device 52.
Cutting unit 62 has main shaft (not shown), and the main shaft is as the rotary shaft substantially parallel with retaining surface 54a.In master The one end of axis is equipped with is dispersed with cricoid cutting tool 64 made of abrasive grain in bond material.In the another side of main shaft It is linked with the rotary driving sources such as motor (not shown), is installed on the cutting tool 64 of the one end of main shaft by driving from the rotation The power of dynamic source transmitting is rotated.Cutting unit 62 is for example supported on elevating mechanism (not shown), and cutting tool 64 passes through the liter Descending mechanism moves in vertical direction.
As shown in (A) of Fig. 9 and (B) of Fig. 9, when forming the slot as the starting point of segmentation, such as make above-mentioned cutting Cutter 64 rotates and is cut into periphery remaining area 11d (that is, reinforcement part).Thereby, it is possible to form reinforcement part as segmentation The slot 11e of starting point.Additionally, it is desirable to which slot 11e is for example formed along segmentation preset lines 13.It, can by forming such slot 11e The chip area 11c of machined object 11 is split together with periphery remaining area 11d.
In addition to this, the model without departing from the purpose of the present invention such as the construction of above embodiment and variation, method It encloses, then can be suitably changed and implemented.

Claims (3)

1. a kind of manufacturing method of chip, it is processed from chip area and around the periphery remaining area of the chip area Object produces multiple chips, and the chip area is divided by a plurality of segmentation preset lines intersected will become the multiple of the chip Region,
The manufacturing method of the chip is characterized in that thering is following step:
Step is kept, directly machined object is kept using holding workbench；
1st laser machining process, after implementing the holding step, according to the wavelength that will there is permeability for machined object Laser beam the focal point inside that is positioned at the machined object that the holding workbench is kept mode it is predetermined along the segmentation Line only irradiates the laser beam to the chip area of machined object, forms the 1st along the segmentation preset lines of the chip area and changes Matter layer, and using the periphery remaining area as the reinforcement part of not formed 1st modification layer；
2nd laser machining process, after implementing the holding step, according to the wavelength that will there is permeability for machined object Laser beam focal point be positioned at the machined object that the holding workbench is kept inside mode along the chip area The laser beam is irradiated with the boundary of the periphery remaining area, forms the 2nd modification layer along the boundary；
Move out step, after implementing the 1st laser machining process and the 2nd laser machining process, by machined object from this Workbench is kept to move out；And
Segmentation step assigns power to machined object and machined object is divided into each be somebody's turn to do after implementing this and moving out step Chip,
In the segmentation step, machined object is divided into each chip and heating and cooling down to assign the power.
2. the manufacturing method of chip according to claim 1, which is characterized in that
The manufacturing method of the chip also has following reinforcement part removal step: implementing the 1st laser machining process and is being somebody's turn to do After 2nd laser machining process and before implementing the segmentation step, which is removed.
3. the manufacturing method of chip according to claim 1 or 2, which is characterized in that
The upper surface of the holding workbench is made of soft material,
In the holding step, the face side of machined object is kept using the material of the softness.
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