CN110462834A - Largely shift the method and technique of miniature LED - Google Patents

Largely shift the method and technique of miniature LED Download PDF

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Publication number
CN110462834A
CN110462834A CN201880018492.3A CN201880018492A CN110462834A CN 110462834 A CN110462834 A CN 110462834A CN 201880018492 A CN201880018492 A CN 201880018492A CN 110462834 A CN110462834 A CN 110462834A
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miniature led
substrate
miniature
led
main surface
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CN201880018492.3A
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CN110462834B (en
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T·J·奥斯雷
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Corning Inc
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Corning Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Abstract

Provide a kind of method for forming miniature LED component or display.The method includes multiple miniature LED material wafers are transferred on transhipment substrate.The method includes the subgroup of the multiple miniature LED is transferred to display backplane from transhipment substrate.The miniature LED subgroup shifted includes at least one miniature LED of each chip in the multiple miniature LED material wafers.It transports the region that substrate perimeter limits and is greater than or equal to the region that display backplane circumference limits.Larger percentage in miniature LED sum needed for display is transferred in single step.Miniature LED material is etched when the miniature LED material from multiple chips is still transported supported, miniature LED is consequently formed.

Description

Largely shift the method and technique of miniature LED
The cross reference of related application
The U.S. Provisional Application Ser the 62/th that the application requires on March 16th, 2017 to submit according to 35U.S.C. § 119 472, No. 121 priority, content as the application basis and by reference to being completely hereby incorporated by.
Background
The present disclosure generally relates to miniature LED component manufacturing fields, and in particular to is largely transferred to miniature LED and such as shows Technique on device as device backboard.In general, miniature LED Material growth growth substrate as such as sapphire On.Then miniature LED material is etched, usually LED material still carries out when on growth substrate, miniature to be formed LED.In order to which miniature LED is used for various applications, such as display application, miniature LED is transferred on display backplane.Due to Miniature LED is tightly packed after etching, and needs to disperse to accumulate on display backplane, so practice have shown that, miniature LED's is efficient Shift it is extremely difficult, for large area display.
It summarizes
One embodiment of the disclosure is related to the method to form miniature light-emitting diode display.The method includes will be multiple micro- Type LED material wafers are transferred in the first main surface of transhipment substrate.The circumference for transporting the first main surface of substrate limits first Region, each miniature LED material wafers form multiple miniature LED.The method includes by the subgroup of the multiple miniature LED from Transhipment substrate is transferred in the first main surface of display backplane, and display backplane has electrical contact to be connected to the multiple of transfer The miniature LED of each of miniature LED.The subgroup of the miniature LED of transfer includes at least one from the multiple miniature LED material The miniature LED of each miniature LED material wafers in chip, the first area are equal to or more than the first master by display backplane The second area that the circumference on surface limits.
Another embodiment of the disclosure is related to forming the method for LED component, and it is the micro- of m that the LED component, which has sum, Type LED, the miniature LED is arranged in an array on selective conductivity substrate, and has average headway p2.The method includes will The closs packing array of miniature LED is supported in the first main surface of non-conductive bearing substrate.The closs packing array of miniature LED has Average headway p1, wherein p2≥10p1.The method includes the non-conductive bearing substrates of movement, thus by the closs packing battle array of miniature LED Column are positioned to opposite with the first main surface of selective conductivity substrate.It is oriented to make miniature LED's in non-conductive bearing substrate While first main surface relative positioning of closs packing array and selective conductivity substrate, the method includes non-by one group of n Adjacent miniature LED is discharged on conductive substrate from the closs packing array of bearing substrate, wherein n >=0.05m.
Another embodiment of the disclosure is related to miniature LED supporting arrangement.The miniature LED supporting arrangement include glass or Glass ceramic baseplate.Glass or glass ceramic baseplate include the first main surface, second main surface opposite with the first main surface, extremely The SiO of few 50 moles of %2, the width greater than 200mm and the length greater than 200mm.The miniature LED supporting arrangement includes by extremely The array of few 10 miniature LED material layer compositions, the array are integrated to the first main surface of glass or glass-ceramic substrate, and Each miniature LED material layer forms closs packing Minitype LED array.The closs packing Minitype LED array, which has, is less than or equal to 100 μm average headway, each miniature LED has less than or equal to 100 μm of width.The sum of the miniature LED of glass substrate bearing Greater than 1,000 ten thousand.
Other feature and advantage are given in the following detailed description, Partial Feature and advantage therein are to this field For technical staff, be easy for finding out according to being described, or by implement include described in detail below, claims with And various embodiments described herein including attached drawing and be realized.
It should be understood that foregoing general description and the following detailed description are all only exemplary, for providing understanding The property of claim and the overview of characteristic or frame.
Appended attached drawing provides a further understanding of the present invention, and attached drawing is incorporated in the present specification and constitutes specification A part.Attached drawing instantiates one or more embodiments, and is used to explain the original of various embodiments together with specification Reason and operation.
Brief description
Fig. 1 is the schematic diagram being just integrated to miniature LED wafer according to illustrative embodiments on transhipment substrate.
Fig. 2 is that display is integrated on transhipment substrate in miniature LED material layer later from miniature according to illustrative embodiments The schematic diagram of LED material layer release growth substrate.
Fig. 3 is the perspective schematic view of transhipment substrate according to illustrative embodiments, and the transhipment is supported to be come from The miniature LED material layer of multiple chips before etching.
Fig. 4 is the miniature LED material from multiple chips being still supported on transhipment substrate according to illustrative embodiments Perspective schematic view, the multiple chip has been etched into miniature LED.
Fig. 5 be it is according to illustrative embodiments transhipment substrate schematic plan view, it is described transhipment it is supported have from The miniature LED of multiple wafer material etchings.
Fig. 6 is the schematic diagram of transhipment substrate shown in Fig. 5 according to illustrative embodiments, the transhipment substrate and display Backboard adjacent positioned.
Fig. 7 is schematic diagram according to illustrative embodiments, wherein selected non-adjacent miniature LED is released from transhipment substrate It puts, and is integrated on display backplane.
Fig. 8 is mild-natured according to the signal for transporting substrate after the selected non-adjacent miniature LED of illustrative embodiments release Face figure.
Fig. 9 is to be carried on the back according to illustrative embodiments from display after the selected non-adjacent miniature LED of transhipment substrate reception The schematic plan view of plate.
Figure 10 is schematic plan view according to illustrative embodiments, presents the gap group on display backplane.
Figure 11 shows the etched miniature LED being located on transhipment substrate according to illustrative embodiments, with small Away from.
Figure 12 shows several groups of miniature LED with big spacing being located on transhipment substrate according to illustrative embodiments, There are three miniature LED for every group of tool.
Detailed description
General reference attached drawing is presented and describes the various of the system and method for being used to form miniature light-emitting diode display backboard Embodiment.In various embodiments, system as described herein and method utilize less step by required miniature LED It is transferred completely on display backplane, provides population (population) for miniature LED backplane.Miniature LED is generally formed: While the miniature LED material of deposition/growth is supported by growth substrate (such as sapphire growth substrate), miniature LED is lost High density arrays are carved into, to form each miniature LED.Etched miniature LED is very small, and (such as size has less than 100 μm A little as low as 12.5 μm of 12.5 μm or smaller of x), and the adjacent interval being initially formed between the miniature LED of state is (between i.e. Away from) also very small (such as spacing is less than 100 μm, less than 15 μm or smaller).
Interval on display backplane between adjacent miniature LED is usually than growing the adjacent state that is initially formed on chip The big manyfold in interval between miniature LED.In the exploitation of the miniature LED component of large area or display, by miniature LED from etching Most of it is significant challenge that intensive state afterwards, which is efficiently converted into the dispersed on display backplane, because applicant have observed that Existing transfer method needs hundreds of independent transfer steps to carry out population to large-sized monitor backboard, and (such as size is greater than about 300mm x 300mm or bigger display).
As discussed herein, system as described herein and method with less transfer step (such as 20 or less, In It is 12 transfer steps in specific embodiment, is in other embodiments 4 transfer steps) complete dispersion on backboard Population.Will beadiscussedain further detail below, efficient backboard population system and method discussed in this article include by miniature LED material from Raised growth substrate, which is transferred on big transhipment substrate, forms array (such as tiling), the transhipment substrate and display backplane Size is equally big or bigger.
While the miniature LED material from multiple chips is by transporting supported, by miniature LED material etches Cheng Wei Type LED array.Applicant believes that by the way that etching comes from immediately while the miniature LED material of multiple chips is supported by backboard The miniature LED of multiple chips, miniature LED have the variation of very small spacing (at least compared to miniature on entirely transhipment substrate LED is etched on growth substrate and is transferred on common transhipment substrate after the etching).It is micro- to support that this technique sets up transhipment substrate The closs packing array of type LED, the transhipment substrate are big as display backplane (or potential bigger).
Next, big miniature LED bearing transhipment substrate is aligned with display backplane, it will a large amount of non-adjacent miniature LED From bearing substrate release (such as being discharged by laser) to display backplane.It is miniature in order to provide dispersion on display backplane LED population releases the non-adjacent miniature LED for being spaced each other required display backplane spacing from transhipment substrate from transhipment substrate It puts, and is integrated on display backplane.
Therefore, in this embodiment, by single transfer step by the very big miniature LED of quantity (such as showing Show at least 5%) depositing on display backplane for the miniature LED sum of device.It is appreciated that most of miniature light-emitting diode displays exist Each position of display backplane includes several groups of miniature LED, miniature including red miniature LED, the miniature LED of blue and green LED, in such an embodiment, the display backplane for forming complete population passes through to be shifted at least once, every kind of miniature LED face Color is from different transhipment substrates.
In a specific embodiment, applicant believes that, miniature LED wafer can be integrated to transhipment substrate in this way On, so that forming the interval or gap of null and empty column form on transhipment substrate between adjacent substrates, these gaps are greater than initial The miniature LED spacing formed.As discussed below, in such an embodiment, system as described herein and method packet The additional transhipment substrate for having miniature LED using population is included, is used for " gap " population in display backplane, these " gaps " Gap row and column between chip on initial transhipment substrate.But, in such an embodiment, required LED shifts step Rapid sum is less than 20, and concretely 12: for the primary initial transfer of each color in three kinds of miniature LED colors, being used for three kinds In miniature LED color each color primary row gap filling transfer, in three kinds of miniature LED colors each color it is primary The transfer of column gap filling, and the cross gap filling transfer for each color in three kinds of miniature LED colors.Even if In the embodiment for causing the gap on transhipment substrate between chip, hundreds of transfers compared to typical backing sheet population technique are walked Suddenly, display backplane can complete population by less than 20 steps.
With reference to Fig. 1-10, the method that efficient population is carried out to display backplane is presented and described.As shown in Figure 1, by more A (for example, at least 10, at least 30, at least 100) miniature LED wafer 10 combines, adheres to or is transferred to transhipment substrate 12 On.As shown in Figure 1, the outer surface of each miniature LED wafer 10 is integrated in the first main surface 14 of transhipment substrate 12.Specific In embodiment, each miniature LED wafer 10 include be supported on growth substrate 18 miniature LED material layer 16 (such as The GaN of blue and the miniature LED of green, the InP for red miniature LED).In this embodiment, the miniature LED of every piece of chip Material layer 16 is integrated in the main surface 14 of (such as passing through adhesive material) transhipment substrate.As shown in Fig. 2, being integrated to substrate After on 12, every piece of growth substrate 18 of release (such as the laser release process indicated by means of arrow 19, or by means of substitution Method is such as ground and is polished), each miniature LED material layer 16 is left from every piece of chip 10 to be incorporated on transhipment substrate 12.
It should be appreciated that for diagrammatic purposes, Fig. 1 is shown in one step by growth substrate 18 from miniature LED layer 16 It removes.But in some embodiments, every piece of growth substrate 18 can be after its miniature LED layer 16 be attached on transhipment substrate 12 And it is removed before being attached next adjacent miniature LED layer 16.In such an embodiment, applicant believes that, by Growth substrate 18 is removed before being attached adjacent miniature LED layer 16, the gap formed between adjacent miniature LED layer 16 can be very small (about 1mm).
In a specific embodiment, transhipment substrate 12 have adhesive, described adhesive be initially it is uncured, with latter The miniature LED material layer 16 of denier contacts with adhesive, and solidifies immediately.In one embodiment, adhesive is UV solidification bonding Agent, such as UV light pass through transhipment 12 solidification adhesive of substrate.Being chosen to remove for miniature LED will be discussed in further detail below.Use laser Adhesive is warmed, so that it is returned to liquid condition in the position that discharge miniature LED, the selection of single miniature LED can be achieved in this way Property release.Heat from laser can also be used to the solder (being discussed below) on head-up display backboard, and solder is then cooling and coagulates Gu closing miniature LED junction onto display backplane, and can be discharged from transhipment substrate 12.
With reference to Fig. 1-3, miniature LED wafer 10 is combined along width and length dimension (being orientated in figure), so that from miniature The LED material 16 of LED wafer 10 forms array or tiled arrangements on transhipment substrate 12.It can be best seen, go from Fig. 3 After growth substrate 18, a large amount of miniature LED material layers 16 from chip 10 are arranged to along the main surface 14 of transhipment substrate 12 Array or tiled pattern.
As shown in figure 3, transhipment substrate 12 has width dimensions W1 and length L1.It can be best seen, turn from Fig. 1 and 3 It transports substrate 12 and is noticeably greater than chip 10, turn so that muti-piece chip 10 (and miniature LED material layer 16 of muti-piece chip 10) is fitted in In the peripheral extent for transporting substrate 12.In such an embodiment, transhipment substrate has perimeter 2W1+2L1.In specific embodiment party In formula, 2W1+2L1 is greater than 3 times of the length of the outermost perimeter of chip 10, is specifically greater than its 5 times, is more specifically greater than its 10 times.Class As, as seen from Figure 3, transport the area of each miniature LED material layer 16 of area ratio of the first main surface 14 of substrate 12 greatly extremely It is 10 times few.These described size differences enable monolithic transhipment substrate 12 to support the miniature LED material from muti-piece chip 10 Layer 16.For example, monolithic transhipment substrate 12 be such as homogenous material the continuously coupled sheet material of entirety or one group in this way Sheet material connect together to be formed monolithic transhipment substrate.It should be appreciated that for diagrammatic purposes, Fig. 3 shows 20 miniature LED materials The bed of material 16 is integrated on transhipment substrate 12, and in numerous applications, it is configured in transhipment substrate 12 to big display backplane (example Such as 50 inch displays, 65 inch displays, 75 inch displays) or muti-piece display backplane carry out population when, transport base Piece 12 is big as display backplane or bigger, and the area on surface 14 is filled including enough miniature LED material layers 16.
In a specific embodiment, transhipment substrate 12, which takes, is sized to fit through a small amount of miniature LED transfer step to larger Display backplane carry out population.In a specific embodiment, W1 and/or L1 can be at least 200mm, at least 300mm, at least 700mm, at least 1270mm, at least 1650mm, at least 1900mm, at least 2200mm etc..In these embodiments, substrate is transported The area of 12 main surface 14 is greater than 300cm2, it is greater than 1000cm2, it is greater than 5000cm2, it is greater than 1000cm2Deng.
In a specific embodiment, transhipment substrate 12 is non-conductance supporting substrate, it does not include for being present in display The electrical connection of miniature LED power supply on device backboard.In various embodiments, substrate 12 is the piece of glass or glass ceramic material Material.In some such embodiments, the material of substrate 12 includes the SiO of at least 50 moles %2, in a specific embodiment SiO comprising 67 moles of % to 70 moles of %2.In a specific embodiment, it is raw to can be Corning Inc for substrate 12 The Eagle XG glass of production.
In various embodiments, other than with big perimeter and area, substrate 12 can be relatively thin, relatively light, in favor of It is transported in treatment process discussed in this article.As shown in Fig. 2, substrate 12 has second main surface opposite with the first main surface 14 26.Substrate 12 has the thickness T1 limited between surface 14 and surface 26.In a specific embodiment, T1 is in 0.25mm and 1mm Between.
As shown in figure 3, in some embodiments, miniature LED wafer 10 being arranged on transhipment substrate 12, is generated multiple The gap row 20 of horizontal alignment, the gap column 22 of multiple vertical orientations and the multiple of infall are intersected between row 20 and column 22 Gap 24.In some embodiments, applicant believes that, due to the size of miniature LED wafer 10 and/or by miniature LED material The constraint that layer 16 is integrated to the combination of transhipment substrate 12 and release process is applied, when miniature LED wafer 10 is attached to transhipment base When piece 12, degree close to each other may be also restrained between miniature LED wafer 10.This limitation leads to miniature LED material Gap 20,22 and 24 between the adjacent area of layer 16.
As seen from Figure 3, gap 20,22 and 24 is quite big compared with the size of miniature LED material layer 16, and will be by miniature The size for the miniature LED that LED material layer 16 is formed is big compared to very.In various embodiments, gap 20 and 22 generally has Gap size is shown as G1.In a specific embodiment, G1 is greater than 0.5mm, specifically between 0.5mm and 1.5mm, more specifically about For 1mm.It should be appreciated that for convenient for diagram, gap size G1 is exaggerated in Fig. 3.As an example, the ruler of miniature LED material layer It is very little usually in the magnitude of about 100mm, in such an embodiment, transport the surface area of substrate 12 at least 90%, it is specific At least 95%, more particularly at least 99% is occupied by miniature LED material layer 16.It is such as explained in more detail below in conjunction with Figure 10, herein The various display backplane population methods discussed are the miniature LED of each color using three pieces of additional transhipment substrates, are used to Population corresponds to the space in gap 20 and 22 and crosspoint 24 on display backplane.
As shown in figure 4, once removing growth substrate 18, leaves miniature LED material layer 16 and is supported on transhipment substrate 12, Just miniature LED 30 is formed by the multiple miniature LED layers 16 being located on substrate 12.As shown in figure 4, multiple miniature LED material layers 16 Miniature LED 30 is formed when also being supported by transhipment substrate 12.In a specific embodiment, all miniature LED material layers 16 form all miniature LED 30 when also being supported by transhipment substrate 12.
In certain embodiments, miniature LED 30 is formed in this way: in miniature LED material layer 16 also by transhipment substrate 12 When bearing, all miniature LED material layers 16 are etched, form multiple miniature LED 30.In some embodiments, etching is formed micro- Type LED 30 includes when miniature LED material layer 16 is also supported by the first main surface 14 of transhipment substrate 12, by photoresist Agent coating is applied in all miniature LED material layers 16.
It should be appreciated that for convenient for describing, Fig. 4 shows that the miniature LED material layer 16 from every piece of chip 10 is etched into 16 A miniature LED.Although the exact amount of the miniature LED 30 formed by each miniature LED material layer 16 will depend on chip 10 The final size of size and each miniature LED 30, but each miniature LED material layer 16 forms a large amount of miniature LED.Specific In embodiment, each miniature LED material layer 16 forms over 1,000,000 miniature LED 30, and at least 1,000 ten thousand miniature LED 30, at least 3,000 ten thousand miniature LED 30, etc..Therefore, in various embodiments, each transhipment substrate 12 can support LED miniature more than 1,000 ten thousand, LED 30 miniature more than 100,000,000, LED miniature more than 500,000,000, LED miniature more than 800,000,000, etc. Deng.
With continued reference to Fig. 4, the quantity of the miniature LED 30 formed by each miniature LED material layer 16 depends on each miniature It is adjacent in the size (being shown as W2) of LED 30, the size (being shown as W3) of each miniature LED layer 16 and each miniature LED material layer 16 Interval or spacing (being shown as P1) between miniature LED 30.In various embodiments, W2 is less than or equal to 100 μm, and P1 is less than Or it is equal to 100 μm.In various embodiments, W3 is between 50mm and 150mm, more specifically about 100mm.In some embodiment party In formula, miniature LED 30 can the miniature LED of very small or closs packing.Specifically, in some embodiments, it is miniature LED 30 can be rectangle, having a size of from about 11.5 μm of 11.5x, in some such embodiments with about 12.5 μm of spacing P1.In some embodiments, W2 can be as small as 5 μm.
With reference to Fig. 5-9, it is shown that carry out population to one or more display backplane 40 using transhipment substrate 12.In order to say Bright to carry out population to display backplane using system as described herein and method, Fig. 5 display transhipment substrate 12 has more multizone Miniature LED material 16 be etched into miniature LED 30.For convenient for diagram, gap row 20 and gap column 22 are shown as straight by Fig. 5 Line.
In general, being shown as the selective conductivity substrate of display backplane 40 (as with conductive traces with reference to Fig. 6 Insulating substrate) it is supporting arrangement, construction is used to receive miniature LED 30 and support miniature LED 30 in a display application.In In specific application, display backplane 40 is supporting arrangement comprising one or more conductive layer/elements and electrical contact, they will It is connect with the miniature LED30 being transferred on display backplane 40.
It is mobile simultaneously to position transhipment substrate 12 with reference to Fig. 6 and Fig. 7, so that miniature LED 30 is in face of the of display backplane 40 One main surface 42.It should be appreciated that the miniature LED spacing P2 needed on display backplane 40 is greater than fine and close etching on transhipment substrate 12 The etching spacing P1 of the miniature LED 30 of state.With reference to Fig. 7, in order to adapt between larger miniature LED needed for display backplane 40 Away from P2, the subgroup of miniature LED 30 is shifted into (such as discharging by selective laser) to display backplane from transhipment substrate 12 40.As shown in fig. 7, spacing needed for display backplane 40 is fitted and shifting non-adjacent 44 miniature LED from substrate 12 It answers, the non-adjacent miniature LED 44 is spaced each other required backboard spacing P2.
In addition, in order to reduce the quantity of required transfer step or reduce it to minimum, the face on the surface 14 of transhipment substrate 12 Product is greater than or equal to the area on the surface 42 of display backplane 40.Therefore, because substrate 12 it is big as display backplane 40 or Bigger than the latter, in the case where arrangement shown in Fig. 6 and 7 face-to-face, a miniature LED 30 on substrate 12 will be in face of aobvious LED location needed for showing on device backboard 40 largely or entirely.Therefore, selectivity release is separated by each non-of display spacing P2 Adjacent miniature LED 30 forms the miniature LED 44 of transfer with spacing P2 on display backplane 40.In this way, greatly Part or all of display backplane 40 miniature LED 30 of population as needed in single transfer step.
With reference to Fig. 7 and Fig. 8, transfer of the miniature LED 30 from substrate 12 is shown in greater detail in they.It is discharged from substrate 12 The miniature LED 30 of subgroup forms part and removes population (depopulated) substrate 46, which goes population substrate 46 to have space 48 Orderly pattern, space 48 occupied by miniature LED 30 originally, these miniature LED 30 become after discharging is located at display backplane The miniature LED 44 of transfer on 40.As shown in figure 9, the miniature LED 44 of transfer on display backplane 40 is turning from substrate 12 Move the mirror image in the space 48 that miniature LED is spared.
In addition, as Figure 7-9, at least one miniature LED 30 is transferred to display back in each miniature LED layer 16 On plate 40.In such an embodiment, carry out population display back from the transfer of substrate 12 due to only having the subgroup of miniature LED 30 Plate 40, substrate 12 can be used to the multiple display backplanes of population.For example, Fig. 7-9 show each miniature LED layer 16 have 25% it is miniature LED 30 is shifted, thus the substrate 12 can be used to four pieces of display backplanes 40 of population.However, as described above, each miniature LED layer 16 generally include millions of miniature LED 30, and the ratio between P2 and P1 are very big, in each transfer step, come from substrate 12 LED sum in only sub-fraction (such as the miniature LED 30 less than 5%, the miniature LED 30 less than 3%, less than 1% Miniature LED 30, etc.) it can be transferred on backboard 40.Therefore, each substrate 12 can be carried on the back in multiple transfer steps for muti-piece Plate 40, with a large amount of display backplanes of population.
It should be appreciated that because many display backplanes 40 include 3 miniature LED (red, one in each LED location As soon as a blue and green), so the process that Fig. 7-9 is discussed will be repeated with three pieces of different substrates, every piece of base There are three types of the miniature LED of one of color color for piece tool.In addition, in a specific embodiment, the process includes with certain Mode goes population (depopulation) to be ranked up to transhipment substrate, and which will consider the size of miniature LED 30 and account for According to space.For example, in one embodiment, for having used the display backplane 40 of the miniature LED population of blue, having green The transported intact substrate 12 of color micro LED possibly can not position as shown in Figure 7, because miniature on full substrate 12 There is interference between LED and the miniature LED of blue being already present on backboard 40.Therefore, in such an embodiment, work as indigo plant When color micro LED 30 is already present on backboard 40, using the substrate 12 for the miniature LED containing green for partially removing population.Therefore, Some backboards 40 can remove population substrate 12 to provide part, be used for having received indigo plant to prior first with the miniature LED population of green The backboard 40 of color micro LED carries out population；And some backboards 40 can remove cloth first with miniature 30 population of LED of blue to provide part The blue substrate 12 in residence is used for carrying out population to the substrate for having received the miniature LED of green in advance.
In some embodiments, red miniature LED is formed of one material, the thickness of the material (such as substrate 12 Highly) it is greater than the height of blue or the miniature LED material of green.Therefore, in such an embodiment, due to this bigger height Degree all will be to then with green or the miniature LED of blue no matter first or secondly with red miniature 30 population backboard 40 of LED 30 pairs of backboards carry out population and interfere.Therefore, in such an embodiment, in various methods discussed in this article, In All miniature LED 30 of green and blue on population to backboard 40 after, population is carried out to red miniature LED 30.
Therefore, with reference to Fig. 5-9, process discussed in this article is capable of forming LED component, such as display, with total quantity It is arranged into array on backboard 40 for the miniature LED of m, these miniature LED, there is average headway P2.Miniature LED 30 is with Mi Dui Product array is supported on substrate 12, has average headway P1.In various embodiments, P2 is greater than 10 times of P1, more specifically Ground, P2 are greater than 30 times of P1.In such an embodiment, the major part in m of display backplane 40 miniature LED sums is Transfer is completed in single step.In various embodiments, n miniature LED 30 are discharged in each release steps, in backboard The miniature LED 44 of release is formed on 40.In a specific embodiment, that shifts in single transfer step is transferred miniature LED 30 greater number n follows following one or more relationships: n >=0.05m, n >=0.1m, n >=0.2m or n >=0.3m.Cause This, it can be seen that is even if the process in conjunction with described in Fig. 5-9 allows each transfer to walk using the substrate with gap 20,22 and 24 The LED of final amt needed for the display backplane 40 of rapid transfer significant percentage.
It, may in the embodiment that substrate 12 includes gap row 20, gap column 22 and gap crosspoint 24 with reference to Figure 10 It needs additional transfer step to come the corresponding gap of population, forms it on display backplane 40.As shown in Figure 10, miniature LED Generate gap on display backplane 40 from the transfer of substrate 12, the gap correspond to gap row 20 present on substrate 12, Gap column 22 and crosspoint 24.Specifically, display backplane 40 includes corresponding to substrate gap from after substrate 12 initially transfer The gap row 50 of row 20, corresponding to the gap column 52 of substrate gap column 22, and the gap corresponding to substrate gap crosspoint 24 Crosspoint 54.It should be appreciated that because substrate 12 includes gap 20,22 and 24, after miniature LED is discharged from substrate 12, without LED The region in gap 20,22 and 24 cannot shift LED to the opposing sections of display backplane 40, generate corresponding backboard gap 50,52 and 54.
As shown in Figure 10, the spacing P2 needed for the size in gap 50,52 and 54 is greater than on display backplane 40, and gap 50,52 and 54 size causes to form miniature LED's 44 on display backplane 40 before the transfer step in filling gap Non-uniform Distribution.In order to eliminate these gaps and heterogeneity, three pieces of additional transhipment substrates are provided, substrate 60,62 and 64 is shown as. Substrate 60,62 and 64 is formed in a manner of identical with substrate 12 discussed above, and arrangement having the same.But, work as substrate 60,62 and 64 (mode shown in Fig. 7 is similar to) when being aligned with display backplane 40, only discharge selected spaced apart miniature LED30, to fill gap 50,52 and 54.As shown in Figure 10, substrate 60 is " intersection " substrate, and selected miniature LED (is denoted as number Word 1) it is released on display backplane 40, population is carried out to all crosspoints 54 on display backplane 40.Substrate 62 is " row " substrate, selected miniature LED (being denoted as number 2) are released on display backplane 40, carry out population to gap row 50.Base Piece 64 is " column " substrate, and selected miniature LED (being denoted as number 3) is released on display backplane 40, carries out to column gap row 52 Population.In specific embodiment, crosspoint 54 is filled before gap row 50 or gap column 52.
Therefore, as shown in Figure 10, in this embodiment, all miniature LED of designated color pass through four transfer populations It onto display backplane 40, once shifts, is once shifted from " row " substrate 62, once from " column " substrate 64 from " intersection " substrate 60 Transfer is once shifted from substrate 12.In a specific embodiment, display backplane 40 passes through at first from 60 turns of " intersection " substrate It moves, finally shifted from substrate 12 and carry out population.In such an embodiment, it needs to shift next complete population backboard 12 times in total 40, because being respectively repeated four times transfer to three kinds of miniature LED colors.
As noted above, for convenient for describing, the spacing P1 on substrate 12 shown in Fig. 5-10,60,62 and 64 is only backboard The half of spacing P2 on 40.Figure 11 and 12 presents typical spacing between etched miniature LED 30 and display backplane 40 The example of difference.In this embodiment, the spacing P1 of miniature LED 30 is 12.5 μm on substrate 12, miniature on display backplane 40 The spacing P2 of LED is 375 μm.Therefore, in this example, every 30th miniature LED 30 will be transferred to display from substrate 12 On backboard 40, to provide 375 μm of display backplane spacing.
In addition, for example, Figure 12 shows that each LED group 70 includes three miniature LED.In one embodiment, Each LED group 70 includes the miniature LED 72 of blue, the miniature LED 74 of green and red miniature LED 76.In another embodiment In, each LED group 70 may include the LED of three same colors, and in such an embodiment, display backplane 40 is in combination with face Color switching device uses, to form final display.
Other than transhipment discussed above and efficiency advantage, relative to other miniature LED etchings and transfer method, this paper institute The method stated can provide other advantages.For example, title has been reported, as lattice mismatches the stress generated on growth substrate Alleviated in etching process, miniature LED generates lateral shift when being released from growth substrate.Applicant speculates, by such as Discussed herein etches miniature LED 30 on the substrate 12 rather than etches on growth substrate, the transverse direction of miniature LED Offset can be reduced or avoided.
Unless otherwise stated, it is otherwise all not intended to and is interpreted as any means as described herein to need to make its step with specific Sequence carries out.Therefore, it is set fourth as that its step follows certain sequence or it does not exist when claim to a method is practically without It specifically indicates that step is limited to specific sequence in claims or specification with any other modes, is all not intended to imply that this Meaning particular order.In addition, as used herein, article " one/one " is intended to include one or more components or element, cannot miss Solution is only one/one.
It will be apparent for a person skilled in the art that in the feelings of the spirit or scope without departing substantially from disclosed embodiment Under condition, various modifications and variations can be made.Because those skilled in the art is contemplated that the fusion of the embodiment Various improved combinations, subitem combination and the variation of the spirit and essence of disclosed embodiment, it is considered that disclosed embodiment party Formula includes full content and its equivalent in scope.

Claims (20)

1. a kind of method for forming miniature light-emitting diode display, this method comprises:
Multiple miniature LED material wafers are transferred in the first main surface of transhipment substrate, wherein the first main table of transhipment substrate The circumference in face limits first area, wherein being formed by the miniature LED material wafers of each of the miniature LED material wafers multiple Miniature LED；And
The subgroup of the multiple miniature LED is transferred to the first main surface of display backplane, the display from transhipment substrate Backboard has electrical contact, and the electrical contact is connected to the miniature LED of each of the multiple miniature LED being transferred, wherein institute The subgroup of the miniature LED of transfer includes that each miniature LED material wafers are at least in the multiple miniature LED material wafers One miniature LED, wherein what the circumference that the first area is equal to or more than the first main surface of the display backplane limited Second area.
2. according to the method described in claim 1, wherein it is described transhipment substrate first area be greater than miniature LED material wafers it The third region that one circumference limits.
3. according to the method described in claim 2, wherein the first area of the transhipment substrate is more than the 10 of the third region Times.
4. according to the method described in claim 1, wherein the subgroup of the miniature LED from transhipment substrate be transferred to display backplane Further include:
Mobile transhipment substrate, makes miniature LED be positioned to opposite with the first main surface of display backplane；And
When transhipment substrate, which is held in position into, keeps miniature LED opposite with the first main surface of display backplane, released from transhipment substrate It puts on n non-adjacent miniature LED to the first main surface of display backplane, wherein n is greater than or equal to and is supported by display backplane LED sum 5%.
5. according to the method described in claim 1, further including all by etching when transporting supported in miniature LED material wafers Miniature LED material wafers, to form the multiple miniature LED.
6. according to the method described in claim 5, wherein etching includes the first master in miniature LED material wafers by transhipment substrate Photoresist coating is applied on all miniature LED material wafers and is patterned when surface bearing.
7. according to the method described in claim 1, wherein transhipment substrate is a sheet glass or glass ceramic material, firstth area Domain is at least 300cm2。
8. according to the method described in claim 1, wherein transporting the miniature LED wafer of supported at least ten.
9. according to the method described in claim 1, wherein miniature LED material wafers are located in the first main surface of transhipment substrate On, so that vertically oriented gap is between each miniature LED material wafers and horizontally adjacent miniature LED material wafers, water Flat orientation gap be located at each miniature LED material wafers and vertically adjacent to miniature LED material wafers between.
10. according to the method described in claim 9, further include:
Multiple non-adjacent miniature LED spaced apart are transferred to described the first of the display backplane from the second transhipment substrate In main surface, into display backplane on region in all vertical rows；
Multiple non-adjacent miniature LED spaced apart are transferred to described the first of the display backplane from third transhipment substrate In main surface, into display backplane on region in all horizontal lines；
Multiple non-adjacent miniature LED spaced apart are transferred to described the first of the display backplane from the 4th transhipment substrate In main surface, into display backplane on region in crosspoint between all horizontal lines and vertical row.
11. according to the method described in claim 10, wherein will be the multiple non-adjacent from the second substrate or third substrate Miniature LED spaced apart is transferred to before display backplane, by the multiple non-adjacent interval from the 4th transhipment substrate The miniature LED opened is transferred to first main surface of the display backplane, into the region in crosspoint.
12. a kind of method for forming miniature LED component, this method comprises:
Miniature LED material wafers will not etched to be integrated in the first main surface of transhipment substrate, wherein the of the transhipment substrate At least one of length and width of one main surface is greater than the length and width of miniature LED material wafers, so that multiple miniature LED material wafers are located on single transhipment substrate；And
Miniature LED material wafers are etched by when transporting supported in miniature LED material wafers, to form Minitype LED array.
13. according to the method for claim 12, wherein the length and width of the first main surface of the transhipment substrate is big In the length and width of miniature LED material wafers, wherein at least 10 miniature LED wafers are integrated to the first of the transhipment substrate In main surface.
14. a kind of method for forming LED component, it is the miniature LED of m that the LED component, which has sum, and the miniature LED is being selected It is arranged in an array on selecting property conductive substrate, and there is average headway p2, which comprises
The closs packing array of miniature LED is supported in the first main surface of non-conductive bearing substrate, the Mi Dui of the miniature LED Product array has average headway p1, wherein p2≥10p1；
Mobile non-conductive bearing substrate, so that the closs packing array of the miniature LED is positioned to and selective conductivity substrate First main surface is opposite；And
Non-conductive bearing substrate be oriented to make the miniature LED closs packing array and the selective conductivity substrate the While one main surface relative positioning, one group of n non-adjacent miniature LED are discharged into conduction from the closs packing array of bearing substrate On substrate, wherein n >=0.05m.
15. further including according to the method for claim 14, the closs packing array to form miniature LED, wherein forming miniature LED Closs packing array include:
The miniature LED wafer of at least ten is integrated on non-conductive bearing substrate, each miniature LED wafer has miniature LED material The bed of material and growth substrate；
After miniature LED wafer is integrated on non-conductive bearing substrate, growth substrate is removed from each miniature LED wafer；With And
When miniature LED material layer is supported by non-conductive bearing and after removing growth substrate, by the miniature LED material combined The bed of material forms miniature LED closs packing array.
16. a kind of miniature LED supporting arrangement, includes:
Glass or glass-ceramic substrate, the substrate includes:
First main surface；
Second main surface opposite with the first main surface；
The SiO of at least 50 moles %2；
Width greater than 200mm；And
Length greater than 200mm；And
The array being made of the miniature LED material layer of at least ten, the array are integrated to the first master of glass or glass-ceramic substrate Surface, each miniature LED material layer form closs packing Minitype LED array, and the closs packing Minitype LED array includes
Average headway less than or equal to 100 μm；And
Each miniature LED has the width less than or equal to 100 μm；
Wherein the sum of the miniature LED of glass substrate bearing is greater than 1,000 ten thousand.
17. miniature LED supporting arrangement according to claim 16, wherein the array of miniature LED material layer includes at least 30 Miniature LED material layer in a the first main surface for being integrated to glass or glass-ceramic substrate, wherein glass substrate bearing is micro- The sum of type LED is greater than 800,000,000.
18. miniature LED supporting arrangement according to claim 16, wherein the glass or glass ceramics are in the first main surface With the average thickness of 0.25-1mm between the second main surface, wherein the glass or glass-ceramic substrate rub comprising 67-70 The SiO of your %2。
19. miniature LED supporting arrangement according to claim 16, also includes:
Multiple machine-direction oriented gaps between each miniature LED material layer and horizontally adjacent miniature LED material layer；And
Positioned at each miniature LED material layer and vertically adjacent to the gap of multiple horizontal orientations between miniature LED material layer.
20. miniature LED supporting arrangement according to claim 16, wherein the gap in machine-direction oriented gap and horizontal orientation Width be at least 0.5mm.
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