CN115172246A - Device transfer substrate, manufacturing method thereof and device transfer method - Google Patents
Device transfer substrate, manufacturing method thereof and device transfer method Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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Abstract
The application provides a device transfer substrate, a preparation method thereof and a device transfer method, wherein a plurality of supporting units are arranged above a first substrate at intervals; each supporting unit comprises a supporting column, a connecting part and an extending part, wherein the connecting part is arranged on one side, far away from the first substrate base plate, of the supporting column; the plurality of components are arranged on one side, far away from the first substrate base plate, of the extension portion. In the subsequent device transferring process, when the third substrate base plate and the device transferring base plate are subjected to counterpoint and pressing, the suspended part (i.e. the extension part) of the supporting unit can be broken under the pressing action of the device and is disconnected with the corresponding connecting part, so that the device is transferred onto the third substrate base plate. Immature laser processing is not needed, components can be transferred under the pressing effect between the substrates, and the process yield can be greatly improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a device transfer substrate, a preparation method thereof and a device transfer method.
Background
With the continuous development of display technology, light Emitting Diode (LED) display technology has become one of the hot spots of research, wherein Micro Light Emitting diodes (Micro LEDs) and submillimeter Light Emitting diodes (Mini LEDs) with smaller sizes are increasingly applied to large-sized backlights due to their small sizes and thin backlight thicknesses. The Micro-LED and mini-LED technologies respectively shrink the size of the existing LED to be below 100 microns and between 100 and 300 microns.
However, the Mini-LED and Micro-LED have many difficulties in the preparation process and complex technology, and particularly the key technology is as follows: bulk transfer techniques. In the bulk transfer technology of large-size display panels, a chip on a growth substrate needs to be transferred to a small substrate, and then the chip of the small substrate is transferred to a large-size substrate or transferred to a target substrate in a seal mode; however, in the processes of small turning and large stamp picking, the transfer yield is low due to immaturity of the laser process and equipment, and the heating step in the laser process affects the performance of the chip, further resulting in reduction of the transfer yield.
Disclosure of Invention
In order to solve the problems, the application provides a device transfer substrate, a preparation method thereof and a device transfer method, and can solve the technical problem that the transfer yield of a Micro/mini-LED display panel in the prior art is low.
In a first aspect, the present application provides a device transfer substrate comprising:
a first base substrate;
a plurality of supporting units arranged above the first substrate at intervals; each supporting unit comprises a supporting column, a connecting part and an extending part, wherein the connecting part is arranged on one side of the supporting column, which is far away from the first substrate base plate, and the extending part is connected with the connecting part; the orthographic projection of the extension part on the first substrate does not cover the orthographic projection of the support column on the first substrate, and the extension part does not contact the first substrate;
and the plurality of components are arranged on one side of the extension part far away from the first substrate base plate.
In some embodiments, in the above device transfer substrate, a minimum width of a gap between an orthographic projection of the component on the first substrate and an orthographic projection of the corresponding support pillar on the first substrate is greater than a minimum width of a gap between an orthographic projection of the component on the first substrate and an orthographic projection of a corresponding side edge of the extension portion away from the connecting portion on the first substrate; .
The area ratio of the orthographic projection of the support column on the first substrate base plate in the support unit to the orthographic projection of the support unit on the first substrate base plate is 12.5% -15%.
In some embodiments, in the above device transfer substrate, a size of a side surface of the support pillar near the first substrate base plate is the same as a size of a side surface of the support pillar far from the first substrate base plate; or the like, or a combination thereof,
the size of one side surface of the support column close to the first substrate base plate is larger than that of one side surface of the support column far away from the first substrate base plate.
In some embodiments, in the above device transfer substrate, a thickness of the extension portion in the support unit is greater than or equal to a height of the support pillar in a direction perpendicular to a surface of the first substrate base plate near the support unit.
In some embodiments, in the above device transfer substrate, the component is bonded to a side of the extension portion away from the first substrate through a first bonding layer.
In some embodiments, in the above-described device transfer base plate, a thickness of the first adhesive layer is smaller than a thickness of the component in a direction perpendicular to a surface of the first base substrate near the supporting unit.
In some embodiments, in the above device transfer substrate, an electrode pad is provided on a side of the component close to the first substrate base plate.
In a second aspect, the present application provides a method of manufacturing a device transfer substrate, comprising:
providing a first substrate base plate;
forming a plurality of supporting units arranged at intervals above the first substrate base plate; each supporting unit comprises a supporting column, a connecting part and an extending part, wherein the connecting part is arranged on one side, far away from the first substrate base plate, of the supporting column; the orthographic projection of the extension part on the first substrate does not cover the orthographic projection of the support column on the first substrate, and the extension part does not contact the first substrate;
and arranging a plurality of components on one side of the extension part far away from the first substrate base plate.
In some embodiments, in the above method for manufacturing a device transfer substrate, forming a plurality of supporting units arranged at intervals above the first substrate base plate includes:
forming a mask layer above the first substrate base plate;
forming a plurality of openings penetrating through the mask layer on the mask layer;
forming a supporting layer which covers the mask layer and is filled in the opening; the thickness of the supporting layer is greater than or equal to that of the mask layer;
patterning the support layer to form the plurality of support units arranged at intervals; the supporting columns of the supporting units are located in the openings, and the orthographic projections of the extending parts on the first substrate cover part of the orthographic projections of the mask layers on the first substrate.
In some embodiments, in the above method for manufacturing a device transfer substrate, disposing a plurality of components on a side of the extension portion away from the first substrate base includes:
providing a second substrate base plate; the second substrate comprises a second base and a plurality of components formed on the second base;
aligning the second substrate base plate with the first substrate base plate on which the supporting unit is formed, and removing the second base in the second substrate base plate so as to transfer the component to one side of the extension part away from the first substrate base plate;
and removing the residual mask layer on the first substrate base plate.
In some embodiments, in the above method for manufacturing a device transfer substrate, before the step of aligning the second substrate base plate with the first substrate base plate on which the supporting unit is formed, the method further includes:
and forming a first bonding layer on one side of the extension part far away from the first substrate base plate.
In a third aspect, the present application provides a device transfer method comprising:
providing a device transfer substrate according to any one of the first aspect or a device transfer substrate prepared by the manufacturing method according to any one of the second aspect;
providing a third substrate base plate, wherein a second bonding layer is arranged on one side of the third substrate base plate;
aligning and pressing the third substrate base plate and the device transfer base plate so that the third substrate base plate is bonded with one side, away from the first substrate base plate, of the device in the device transfer base plate through the second bonding layer, and the extension part of the supporting unit is disconnected with the corresponding connecting part under the pressing effect of the device;
and removing the first substrate base plate and the supporting unit in the device transfer base plate so as to transfer the component to the third substrate base plate.
In some embodiments, in the device transfer method, in the transfer base plate, the component is bonded to the side of the extension portion away from the first substrate base plate through a first bonding layer;
removing the first substrate base plate and the supporting unit in the device transfer base plate to transfer the component to the third substrate base plate, comprising the following steps:
removing the first substrate base plate, the support columns and the connection portions of the support unit in the device transfer base plate to transfer the components onto the third substrate base plate;
and removing the first bonding layer and the extension part bonded with the component.
In some embodiments, in the above device transfer method, the second adhesive layer is different from the first adhesive layer in material.
In some embodiments, in the above-described device transfer method, a thickness of the second adhesive layer is smaller than a thickness of the component in a direction perpendicular to a surface of the third substrate base plate for alignment with the device transfer base plate.
By adopting the technical scheme, the following technical effects can be at least achieved:
the application provides a device transfer substrate, a preparation method thereof and a device transfer method, wherein a plurality of supporting units are arranged above a first substrate at intervals; each supporting unit comprises a supporting column, a connecting part and an extending part, wherein the connecting part is arranged on one side, far away from the first substrate base plate, of the supporting column; the plurality of components are arranged on one side of the extension part, which is far away from the first substrate base plate. In the subsequent device transferring process, when the third substrate base plate and the device transferring base plate are subjected to counterpoint and pressing, the suspended part (i.e. the extension part) of the supporting unit can be broken under the pressing action of the device and is disconnected with the corresponding connecting part, so that the device is transferred onto the third substrate base plate. In the device transfer method, immature laser processing is not needed, the transfer of the components can be realized through the pressing effect between the substrates, and the process yield can be greatly improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application and not to limit the application. In the drawings:
fig. 1 is a schematic cross-sectional view of a device transfer substrate according to an exemplary embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of another device transfer substrate according to an exemplary embodiment of the present application;
FIG. 3 is a schematic flow chart diagram illustrating a method of fabricating a device transfer substrate according to an exemplary embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of a first intermediate structure formed in accordance with steps associated with a method of fabricating a device transfer substrate, according to an exemplary embodiment of the present application;
FIG. 5 is a schematic cross-sectional view of a second intermediate structure formed in a step associated with a method of fabricating a device transfer substrate according to an exemplary embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of a third intermediate structure formed in a step associated with a method of fabricating a device transfer substrate, in accordance with an exemplary embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of a second substrate shown in an exemplary embodiment of the present application;
FIG. 8 is a schematic cross-sectional view of a fourth intermediate structure formed in accordance with a step of a method of fabricating a device transfer substrate, according to an exemplary embodiment of the present application;
FIG. 9 is a schematic cross-sectional view of a fifth intermediate structure formed at a step associated with a method of fabricating a device transfer substrate, in accordance with an exemplary embodiment of the present application;
FIG. 10 is a schematic cross-sectional view of a sixth intermediate structure formed in accordance with a step of a method of fabricating a device transfer substrate, according to an exemplary embodiment of the present application;
FIG. 11 is a schematic flow chart diagram illustrating a device transfer method according to an exemplary embodiment of the present application;
FIG. 12 is a schematic cross-sectional view of a third substrate shown in an exemplary embodiment of the present application;
FIG. 13 is a schematic cross-sectional view of a first intermediate structure formed in accordance with steps associated with a device transfer method, according to an exemplary embodiment of the present application;
FIG. 14 is a schematic cross-sectional view of a second intermediate structure formed in accordance with an exemplary embodiment of a device transfer method of the present application;
FIG. 15 is a schematic cross-sectional view of a third intermediate structure formed in accordance with an exemplary embodiment of a device transfer method of the present application;
FIG. 16 is a cross-sectional schematic view of a product structure resulting from a device transfer method according to an exemplary embodiment of the present application;
in the drawings, wherein like parts are designated with like reference numerals, the drawings are not necessarily to scale;
the reference signs are:
10-a device transfer substrate; 11-a first substrate base; 12-a support unit; 121-support column; 122-a connecting part; 123-an extension; 13-a component; 13 a-electrode pad; 14-a first adhesive layer; 15-a mask layer; 15 a-opening a hole; 16-a second substrate base plate; 161-a second substrate;
20-a third substrate base; 21-a second adhesive layer;
x-the distance between two adjacent supporting units; a-the distance between the orthographic projection of the component on the first substrate and the orthographic projection of the corresponding support column on the first substrate; b-the distance between the orthographic projection of the component on the first substrate and the orthographic projection of one side edge, away from the connecting part, of the corresponding extension part on the first substrate; d 1-height of the support unit; d 2-thickness of the extension.
Detailed Description
The following detailed description will be provided with reference to the accompanying drawings and embodiments, so that how to apply the technical means to solve the technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and various features in the embodiments of the present application can be combined with each other without conflict, and the formed technical solutions are all within the scope of protection of the present application. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present application, detailed structures and steps will be provided in the following description in order to explain the technical solutions proposed in the present application. The following detailed description of the preferred embodiments of the present application, however, will suggest that the present application may have other embodiments in addition to these detailed descriptions.
In a huge transfer technology of a Mini-LED and a Micro-LED with large size, a chip on a growth substrate needs to be transferred to a small substrate, and then the chip of the small substrate is transferred to a large-size substrate or transferred to a target substrate in a seal mode; however, in the processes of small turning and large turning and stamp picking, the dissociating material is used for completing the release in a laser mode; corresponding would require "small to large" close-packed equipment, laser discharge equipment. However, the laser process and equipment for dissociating materials are still immature at present, the transfer yield is low, and the heating step in the laser process affects the performance of the chip, so that the transfer yield is reduced.
Accordingly, the present application provides a device transfer substrate 10, as shown in fig. 1, the device transfer substrate 10 including a first substrate base plate 11, a plurality of support units 12, and a plurality of components 13.
Wherein, a plurality of supporting units 12 are arranged above the first substrate base plate 11 at intervals; wherein each support unit 12 comprises a support column 121, a connecting portion 122 disposed on a side of the support column 121 away from the first substrate base plate 11, and an extending portion 123 connected to the connecting portion 122; the orthographic projection of the extension part 123 on the first substrate base 11 does not cover the orthographic projection of the support post 121 on the first substrate base 11, and the extension part 123 does not contact the first substrate base 11. I.e. the extension 123 is a suspended portion in the support unit 12.
And a plurality of components 13 provided on the side of the extension portion 123 remote from the first substrate 11.
In this structure, during the subsequent device transferring process, when the target substrate and the device transferring substrate 10 are aligned and pressed, the suspended portion (i.e., the extension portion 123) of the supporting unit 12 may be broken under the pressing action of the device 13, and is disconnected from the corresponding connection portion 122, so as to transfer the device 13 onto the target substrate. In the device transfer method, immature laser processing is not needed, the transfer of the device 13 can be realized through the pressing effect between the substrates, the heating process is reduced, and the process yield can be greatly improved. And the requirements on materials and equipment are reduced, the process window is larger and more reliable, and the manufacturing of a large-size display device is facilitated.
In some embodiments, the minimum width (a) of the gap between the orthographic projection of the component 13 on the first substrate 11 and the orthographic projection of the corresponding support post 121 on the first substrate 11 is greater than the minimum width (b) of the gap between the orthographic projection of the component 13 on the first substrate 11 and the orthographic projection of the corresponding extension 123 on the first substrate 11, wherein one side edge of the extension 123 away from the connecting portion 122 is greater than b.
It can be understood that, in order to facilitate that the extension portion 123 of the supporting unit 12 is easily broken under the pressing action of the component 13 and the corresponding connecting portion 122 under the influence of a shearing force when the target substrate and the device transfer substrate 10 are aligned and pressed in the subsequent device transfer process, the minimum width (a) of the gap between the orthographic projection of the component 13 on the first substrate 11 and the orthographic projection of the corresponding supporting column 121 on the first substrate 11 may be greater than the minimum width (b) of the gap between the orthographic projection of the component 13 on the first substrate 11 and the orthographic projection of one side edge of the corresponding extension portion 123, which is far away from the connecting portion 122, on the first substrate 11, that is, a is greater than b, so that the extension portion 123 is easily broken under the pressing action of the component 13 and the corresponding connecting portion 122 under the influence of a shearing force.
In some embodiments, as shown in fig. 1, a side surface (i.e., a lower surface) of the supporting column 121 close to the first substrate base 11 has the same size as a side surface (i.e., an upper surface) of the supporting column 121 far from the first substrate base 11. It is understood that the cross-sectional shape of the support columns 121 in a plane perpendicular to the first substrate base plate 11 includes a rectangle.
In some embodiments, as shown in fig. 2, a size of a side surface (i.e., a lower surface) of the supporting column 121 close to the first substrate base 11 is larger than a size of a side surface (i.e., an upper surface) of the supporting column 121 far from the first substrate base 11. It is understood that the cross-sectional shape of the support column 121 includes a regular trapezoid (a trapezoid having a small upper portion and a large lower portion) in a plane perpendicular to the first substrate base plate 11. With this structure, the extending portions 123 can be disconnected from the corresponding connecting portions 122 under the pressing action of the component 13.
In some embodiments, a size of a side surface (i.e., a lower surface) of the supporting column 121 close to the first substrate base 11 may also be smaller than a size of a side surface (i.e., an upper surface) of the supporting column 121 far from the first substrate base 11. It is understood that the cross-sectional shape of the support columns 121 includes an inverted trapezoid (trapezoid with a large upper portion and a small lower portion) in a plane perpendicular to the first substrate base plate 11. With this structure, the extending portions 123 can be disconnected from the corresponding connecting portions 122 under the pressing action of the component 13.
In some embodiments, the area ratio of the orthographic projection of the support columns 121 on the first substrate 11 in the support unit 12 to the orthographic projection of the support unit 12 on the first substrate 11 is 12.5% to 15%.
It can be understood that, in order to enable the supporting column 121 to better support the supporting unit 12, and at the same time, there is enough area to form the extending portion 123, the area ratio of the orthographic projection of the supporting column 121 on the first substrate 11 to the orthographic projection of the supporting unit 12 on the first substrate 11 in the supporting unit 12 is 12.5% -15%.
The size of the supporting unit 12, particularly the size of the extending portion 123, is related to the size of the component 13, and the larger the size of the component 13, the larger the size of the extending portion 123.
In some embodiments, the components 13 and the supporting units 12 may be in a one-to-one correspondence, and one component 13 is disposed on the extending portion 123 of one supporting unit 12.
Correspondingly, when the components 13 and the support units 12 may be in a one-to-one correspondence relationship, the spacing between two adjacent support units 12 depends on the spacing of the components 13 on the initial growth substrate or the spacing on the final target substrate.
In some embodiments, the spacing X between two adjacent support units 12 is greater than or equal to 5 μm.
In some embodiments, the thickness d2 of the extension portion 123 in the supporting unit 12 is greater than or equal to the height d1 of the supporting column 121 in a direction perpendicular to the surface (and the upper surface shown in the figure) of the first substrate base 11 close to the supporting unit 12.
It is understood that the supporting unit 12 is formed by the same film patterning process, and in order to connect the supporting column 121 and the extending portion 123 through the connecting portion 122, so that the supporting column 121 can support the extending portion 123, the thickness d2 of the extending portion 123 may be greater than or equal to the height d1 of the supporting column 121.
In some embodiments, the height d1 of the supporting column 121 is 1 μm to 3 μm in a direction perpendicular to the surface (and the upper surface shown in the figure) of the first substrate base plate 11 near the supporting unit 12. Further, the height d1 of the supporting column 121 may be 2 μm.
In some embodiments, the dimension of the supporting column 121 in the direction parallel to the surface of the first substrate base plate 11 close to the supporting unit 12 (i.e. the transverse dimension of the supporting column 121) is greater than the dimension of the supporting column 121 in the direction perpendicular to the surface of the first substrate base plate 11 close to the supporting unit 12 (i.e. the longitudinal height d1 of the supporting column 121) to ensure that the supporting column 121 is well connected with the first substrate base plate 11 to achieve good supporting effect of the supporting column 121.
In some embodiments, the dimension of the supporting columns 121 in a direction parallel to the surface of the first substrate base plate 11 near the supporting unit 12 (i.e., the lateral dimension of the supporting columns 121) is 3 μm to 10 μm. Further, the lateral dimension of the supporting column 121 may be 5 μm.
In some embodiments, the component 13 is adhered to the side of the extension portion 123 away from the first substrate base 11 by the first adhesive layer 14, so as to prevent the component 13 from moving during the transferring process, which may result in a change in the position of the component 13.
In some embodiments, the thickness of the first adhesive layer 14 is smaller than the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface as shown in the figure) of the first substrate base plate 11 near the support unit 12. The material of the first adhesive layer 14 may be a viscous organic material, and during the lamination of the target substrate and the device transfer substrate 10, the component 13 may be sunk into the first adhesive layer 14 under the action of the lamination, so that in order to avoid the component 13 from being completely sunk into the first adhesive layer 14 and affecting the device performance, the thickness of the first adhesive layer 14 may be smaller than that of the component 13.
Further, the thickness of the first adhesive layer 14 is equal to or less than one third of the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the figure) of the first base substrate 11 near the supporting unit 12.
In some embodiments, the thickness of the first adhesive layer 14 may be 1 μm to 5 μm in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first base substrate 11 near the support unit 12. Further, the thickness of the first adhesive layer 14 may be 2 μm.
In some embodiments, the component 13 is provided with an electrode pad 13a on a side close to the first substrate base 11.
In some embodiments, the component 13 may be a light emitting device. It is to be understood that the device transfer substrate 10 provided herein is suitable for use in transfer techniques for light emitting devices.
In some embodiments, when the component 13 is a light emitting device, the component 13 may be a mini LED or a micro LED. Correspondingly, the electrode pads 13a of the component 13 include an anode pad and a cathode pad.
Wherein the mini LED has a cross-sectional dimension (length, width or diagonal or diameter) between about 100 μm and about 300 μm. The cross-sectional dimensions (length, width or diagonal or diameter parameters) of micro LEDs are below about 100 μm. In some embodiments, the micro LED has a thickness of 6 μm to 8 μm in a direction perpendicular to the surface of the first substrate base 11 near the supporting unit 12 (and the upper surface as shown in the figure).
Correspondingly, the component 13 includes an anode layer, a light emitting layer, and a cathode layer, which are sequentially stacked in a direction perpendicular to the surface (and the upper surface shown in the drawing) of the first substrate 11 near the supporting unit 12. The anode bonding pad and the cathode bonding pad are respectively electrically connected with the anode layer and the cathode layer and are respectively used for leading out the anode layer and the cathode layer.
In some embodiments, the material of the anode is a P-type GaN layer.
In some embodiments, the material of the cathode is an N-type GaN layer.
In some embodiments, the material of the light emitting layer is an InGaN multi-quantum well active layer.
In some embodiments, the light-emitting side of the component 13 is disposed opposite to the electrode pads 13a, and correspondingly, in the above-described transfer substrate, the electrode pads 13a of the component 13 are located on the side of the component 13 close to the first substrate 11, and the light-emitting side of the component 13 is located on the side of the component 13 away from the first substrate 11.
In some embodiments, the material of the first substrate 11 includes glass, quartz, sapphire, or the like.
In some embodiments, the material of the supporting unit 12 includes a brittle non-metallic material such as silicon dioxide, silicon nitride, or the like, or a metallic material such as titanium, copper, or the like, or a stacked structure of the above materials.
The device transfer substrate 10 provided in the embodiment of the present application, wherein a plurality of supporting units 12 are disposed above a first substrate 11 at intervals; wherein each support unit 12 comprises a support column 121, a connecting portion 122 disposed on a side of the support column 121 away from the first substrate base plate 11, and an extending portion 123 connected to the connecting portion 122; the plurality of components 13 are disposed on a side of the extension portion 123 away from the first substrate 11. In the subsequent device transferring process of the device transfer substrate 10, when the target substrate and the device transfer substrate 10 are aligned and pressed, the suspended portion (i.e., the extension portion 123) of the supporting unit 12 is broken under the pressing action of the device 13, and is disconnected from the corresponding connecting portion 122, so that the device 13 is transferred. In the subsequent device transfer process, immature laser processing is not needed, the transfer of the component 13 can be realized through the pressing effect between the substrates, and the process yield can be greatly improved.
The present application provides a method of fabricating a device transfer substrate 10, hereinafter referred to as "patterning" including the processing steps of coating a photoresist, mask exposing, developing, etching, and stripping the photoresist. The patterning process for patterning the photoresist comprises the processes of coating the photoresist, mask exposure, development and the like, and does not comprise an etching step and a photoresist stripping step. The "deposition" may be selected from any one or more of sputtering, evaporation and chemical vapor deposition, and the etching may be performed using any one or more selected from dry etching and wet etching.
Referring to fig. 3, a method for manufacturing a device transfer substrate 10 (the device transfer substrate 10 shown in fig. 1) according to an embodiment of the present disclosure includes the following steps:
step S110: a first substrate base plate 11 is provided.
In some embodiments, the material of the first substrate 11 includes glass, quartz, sapphire, or the like.
Step S120: forming a plurality of supporting units 12 arranged at intervals above the first substrate base plate 11; wherein each support unit 12 comprises a support column 121, a connecting portion 122 disposed on a side of the support column 121 away from the first substrate base plate 11, and an extending portion 123 connected to the connecting portion 122; the orthographic projection of the extension part 123 on the first substrate 11 does not cover the orthographic projection of the support column 121 on the first substrate 11, and the extension part 123 does not contact the first substrate 11.
The extension 123 is a suspended portion in the support unit 12.
In some embodiments, the cross-sectional shape of the support posts 121 in a plane perpendicular to the first substrate base plate 11 comprises a rectangle or a trapezoid.
In some embodiments, the area ratio of the orthographic projection of the support columns 121 on the first substrate 11 in the support unit 12 to the orthographic projection of the support unit 12 on the first substrate 11 is 12.5% to 15%.
It can be understood that, in order to enable the supporting column 121 to better support the supporting unit 12, and at the same time, there is enough area to form the extending portion 123, the area ratio of the orthographic projection of the supporting column 121 on the first substrate 11 to the orthographic projection of the supporting unit 12 on the first substrate 11 in the supporting unit 12 is 12.5% -15%.
In some embodiments, the thickness d2 of the extension portion 123 in the supporting unit 12 is greater than or equal to the height d1 of the supporting column 121 in a direction perpendicular to the surface (and the upper surface shown in the figure) of the first substrate base plate 11 near the supporting unit 12.
In some embodiments, the height d1 of the supporting column 121 along a direction perpendicular to the surface (and the upper surface shown in the figure) of the first substrate base 11 close to the supporting unit 12 is 1 μm to 3 μm. Further, the height d1 of the supporting column 121 may be 2 μm.
In some embodiments, the dimension of the supporting column 121 in the direction parallel to the surface of the first substrate base plate 11 close to the supporting unit 12 (i.e. the transverse dimension of the supporting column 121) is larger than the dimension of the supporting column 121 in the direction perpendicular to the surface of the first substrate base plate 11 close to the supporting unit 12 (i.e. the longitudinal height d1 of the supporting column 121) to ensure that the supporting column 121 is well connected with the first substrate base plate 11 to achieve good supporting effect of the supporting column 121.
In some embodiments, the dimension of the supporting columns 121 in a direction parallel to the surface of the first substrate base plate 11 near the supporting unit 12 (i.e., the lateral dimension of the supporting columns 121) is 3 μm to 10 μm. Preferably, the lateral dimension of the support posts 121 may be 5 μm.
In some embodiments, step S120 includes the steps of:
s122: forming a mask layer 15 over the first base substrate 11;
s124: as shown in fig. 4, a plurality of openings 15a penetrating the mask layer 15 are formed on the mask layer 15;
s126: forming a support layer covering the mask layer 15 and filling the opening 15a; wherein, the thickness of the supporting layer is more than or equal to that of the mask layer 15;
s128: as shown in fig. 5, the support layer is patterned to form a plurality of support units 12 arranged at intervals; the supporting posts 121 of the supporting unit 12 are located in the openings 15a, and an orthographic projection of the extending portion 123 on the first substrate 11 covers an orthographic projection of a portion of the mask layer 15 on the first substrate 11.
The supporting column 121 of the supporting unit 12 is located in the opening 15a, and the shape and size of the supporting column 121 are consistent with those of the opening 15 a.
In some embodiments, the material of masking layer 15 comprises photoresist.
The thickness of the supporting layer is greater than or equal to that of the mask layer 15, so that the extension 123 and the supporting column 121 in the supporting unit 12 can be connected by the connecting portion 122, and the supporting column 121 can support the extension 123.
It can be understood that, since the support unit 12 is formed by forming a support layer on the first substrate base 11 and then by patterning, the intermolecular binding force between the support columns 121 of the support unit 12 and the first substrate base 11 is strong, and the support columns 121 can achieve a strong supporting effect.
In some embodiments, the material of the supporting layer includes a brittle non-metallic material such as silicon dioxide and silicon nitride, or a metallic material such as titanium and copper, or a stacked structure of the above materials.
Step S130: the plurality of components 13 are disposed on the side of the extension portion 123 away from the first substrate 11.
The size of the supporting unit 12, particularly the size of the extending portion 123, is related to the size of the component 13, and the larger the size of the component 13, the larger the size of the extending portion 123.
In some embodiments, the components 13 and the supporting units 12 may be in a one-to-one correspondence, and one component 13 is disposed on the extending portion 123 of one supporting unit 12.
Correspondingly, when the components 13 and the support units 12 may be in a one-to-one correspondence relationship, the spacing between two adjacent support units 12 depends on the spacing of the components 13 on the initial growth substrate or the spacing on the final target substrate.
In some embodiments, the spacing between two adjacent support units 12 is greater than or equal to 5 μm.
In some embodiments, in the finally obtained transfer substrate, a minimum width (a) of a gap between an orthographic projection of the component 13 on the first substrate 11 and an orthographic projection of the corresponding support pillar 121 on the first substrate 11 is greater than a minimum width (b) of a gap between an orthographic projection of the component 13 on the first substrate 11 and an orthographic projection of a side edge, away from the connecting portion 122, of the corresponding extending portion 123 on the first substrate 11, that is, a is greater than b, so that the extending portion 123 and the corresponding connecting portion 122 are prone to fracture under the pressing effect of the component 13 and the influence of a shearing force.
In some embodiments, step S130 includes the steps of:
s132: as shown in fig. 7, a second substrate base 16 is provided; the second substrate 16 includes a second base 161 and a plurality of components 13 formed on the second base 161;
s134: as shown in fig. 8, aligning the second substrate 16 with the first substrate 11 formed with the supporting unit 12, and removing the second base 161 in the second substrate 16 to transfer the component 13 onto the side of the extension 123 away from the first substrate 11, as shown in fig. 9;
s136: the mask layer 15 remaining on the first substrate base 11 is removed.
The device transfer substrate 10 shown in fig. 1 is finally obtained.
In some embodiments, in the second substrate board 16, the electrode pads 13a of the component 13 are located on a side away from the second base 161, so that after the component 13 is transferred onto the first substrate board 11, the electrode pads 13a of the component 13 are located on a side close to the first substrate board 11.
The second substrate 161 is an initial growth substrate of the component 13. When the component 13 is a light-emitting device, the light-emitting side of the component 13 is located on the side close to the second substrate 161, and the separation between the second substrate 161 and the component 13 can be performed by laser lift-off, polishing, etching, and the like.
In some embodiments, the conditions for the alignment and lamination between the second substrate 16 and the first substrate 11 with the supporting unit 12 formed thereon may be: the temperature is 80-200 ℃, the pressure is 0.3-1.5 MPa, and the vacuum is KPa grade.
Preferably, the contraposition pressing condition is that the temperature is 150 ℃, the pressure is 0.5MPa, and the vacuum is-100 KPa.
In some embodiments, before aligning the second substrate 16 with the first substrate 11 formed with the supporting unit 12 in step S134, the method may further include:
as shown in fig. 6, the first adhesive layer 14 is formed on the side of the extension portion 123 away from the first base substrate 11.
In the process of aligning and pressing the second substrate base plate 16 and the first substrate base plate 11 formed with the supporting unit 12, one side of the component 13 far away from the second substrate base plate 16 is bonded with one side of the extending part 123 of the supporting unit 12 far away from the first substrate base plate 11 through the first bonding layer 14, so that the component 13 is prevented from moving in the transferring process and changing the position of the component 13.
In some embodiments, the first adhesive layer 14 may be coated on the entire surface of the first substrate 11, and then, after the step of removing the second base 161 in the second substrate 16 in step S134, the first adhesive layer 14 except the orthographic projection of the component 13 falling on the first adhesive layer 14 may be partially etched away by dry etching, and the orthographic projection of the component 13 falling on the first adhesive layer 14 may be partially overlapped with the remaining first adhesive layer 14. A pattern of the first adhesive layer 14 as shown in fig. 10 is obtained.
In some embodiments, the thickness of the first adhesive layer 14 is smaller than the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the figure) of the first base substrate 11 near the supporting unit 12. The material of the first adhesive layer 14 may be a viscous organic material, and during the lamination of the target substrate and the device transfer substrate 10, the component 13 may be sunk into the first adhesive layer 14 under the action of the lamination, so that in order to avoid the component 13 from being completely sunk into the first adhesive layer 14 and affecting the device performance, the thickness of the first adhesive layer 14 may be smaller than that of the component 13.
Further, the thickness of the first adhesive layer 14 is equal to or less than one third of the thickness of the component 13 in a direction perpendicular to the surface (and the upper surface shown in the figure) of the first base substrate 11 near the supporting unit 12.
In some embodiments, when the material of the mask layer 15 is a photoresist, the remaining photoresist may be removed by wet etching in step S136.
In the method for manufacturing the device transfer base plate 10 provided by the embodiment of the application, the plurality of supporting units 12 are formed on the first substrate base plate 11, then the component 13 is arranged on the side, away from the first substrate base plate 11, of the extending portion 123 of the supporting unit 12, and in the subsequent device transfer process, when the target base plate and the device transfer base plate 10 are in counterpoint pressing, the suspended portion (i.e., the extending portion 123) of the supporting unit 12 is broken under the pressing action of the component 13 and is disconnected from the corresponding connecting portion 122, so that the component 13 is transferred. In the subsequent device transfer process, immature laser processing is not needed, the transfer of the component 13 can be realized through the pressing effect between the substrates, and the process yield can be greatly improved.
On the basis of the device transfer substrate 10, referring to fig. 11, a device transfer method provided by the embodiment of the present application includes the following steps:
step S210: there is provided any one of the device transfer substrates 10 described above or the device transfer substrate 10 prepared by the manufacturing method described above.
Step S220: as shown in fig. 12, a third substrate 20 is provided, wherein a second adhesive layer 21 is provided on one side of the third substrate 20.
Step S230: as shown in fig. 13, the third substrate 20 and the device transfer substrate 10 are aligned and bonded, so that the third substrate 20 is bonded to the side of the device transfer substrate 10 away from the first substrate 11 through the second bonding layer 21, and the extending portion 123 of the supporting unit 12 is disconnected from the corresponding connecting portion 122 under the bonding action of the device 13, as shown in fig. 14.
Step S240: the first substrate base plate 11 and the supporting unit 12 in the device transfer base plate 10 are removed to transfer the component 13 onto the third substrate base plate 20.
In some embodiments, when the electrode pads 13a of the component element 13 are located on the side close to the first substrate base 11 in the transfer base, the electrode pads 13a of the component element 13 are located on the side away from the third substrate base 20 after the transfer of the component element 13 onto the third substrate base 20.
That is, due to the special structure design of the supporting unit 12 in the device transfer substrate 10, when the third substrate 20 and the device transfer substrate 10 are aligned and pressed, the suspended portion of the supporting unit 12 (i.e., the extending portion 123) is broken by the component 13, so that the component 13 is separated from the first substrate 11, and the transfer of the component 13 is realized.
Therefore, in the device transfer method, immature laser processing is not needed, transfer of the component 13 can be achieved through the pressing effect between the substrates, and the process yield can be greatly improved.
In some embodiments, the structure obtained after step S240 has a thickness of the second adhesive layer 21 smaller than that of the component 13 in a direction perpendicular to the surface of the third base substrate 20 for alignment with the device transfer substrate 10. The material of the second adhesive layer 21 may be a viscous organic material, and during the pressing process of the third substrate base plate 20 and the device transfer base plate 10, the component 13 may sink into the second adhesive layer 21 under the pressing action, so that in order to avoid the component 13 from completely sinking into the second adhesive layer 21 and affecting the device performance, the thickness of the second adhesive layer 21 may be smaller than that of the component 13.
Further, the thickness of the second adhesive layer 21 is equal to or less than one third of the thickness of the component 13 in the direction perpendicular to the surface of the third base substrate 20 for alignment with the device transfer substrate 10.
It should be noted that, since the supporting unit 12 is directly formed on the first substrate 11, the intermolecular binding force between the supporting pillars 121 of the supporting unit 12 and the first substrate 11 is relatively strong, and when the suspended portion (i.e., the extension portion 123) of the supporting unit 12 is broken, the supporting pillars 121 of the supporting unit 12 can be strongly supported.
When the third substrate 20 and the device transfer substrate 10 are aligned and pressed, due to the blocking effect of the first substrate 11, when the extension 123 is broken until the extension 123 contacts and abuts against the first substrate 11, the pressing is completed, and at this time, there is no intermolecular bonding force between the extension 123 and the first substrate 11, which is a simple contact relationship. Therefore, at this time, the first substrate base plate 11 and the supporting columns 121 and the connecting portions 122 of the supporting units 12 thereon can be directly removed.
In some embodiments, when the component 13 is fixedly connected to the extension 123, the extension 123 may be removed by etching or the like.
In some embodiments, in the transfer substrate, the component 13 is bonded to the side of the extension portion 123 away from the first substrate base 11 by the first adhesive layer 14. Correspondingly, step S240 includes the following steps:
s242: as shown in fig. 15, the first substrate base plate 11, and the support columns 121 and the connection portions 122 of the support units 12 in the device transfer base plate 10 are removed to transfer the components 13 onto the third substrate base plate 20;
s244: as shown in fig. 16, the first adhesive layer 14 and the extension portion 123 adhered to the component 13 are removed.
In some embodiments, the manner of removing the extension portion 123 and the first adhesive layer 14 adhered to the component 13 may be to clean the first adhesive layer 14 by using a special chemical reagent to clean the first adhesive layer 14, so that the extension portion 123 may be separated from the component 13 to complete the transfer of the component 13.
In some embodiments, in order to avoid the second adhesive layer 21 from being affected during the cleaning process of the first adhesive layer 14 and causing the component 13 to fall off from the third substrate base plate 20, the second adhesive layer 21 may be protected by a protective layer during the cleaning process of the first adhesive layer 14.
In some embodiments, the first adhesive layer 14 and the second adhesive layer 21 may be made of different adhesive materials, i.e., the second adhesive layer 21 is made of a different material than the first adhesive layer 14, and then the first adhesive layer 14 is removed using a solvent that dissolves the first adhesive layer 14 but not the second adhesive layer 21.
In some embodiments, the second adhesive layer 21 and the first adhesive layer 14 may be dissolved in different solvents by adding different additives to the same substrate.
The adhesive material used for the second adhesive layer 21 and the first adhesive layer 14 may include an organic material of epoxy, acrylic, or polymer.
Further, the entire substrate obtained after step S242 may be placed in a solvent capable of dissolving the first adhesive layer 14 but not the second adhesive layer 21, and after the first adhesive layer 14 is dissolved, the extension portion 123 and the component 13 may be separated, thereby completing the transfer of the component 13.
In the device transfer method provided by the embodiment of the present application, the third substrate 20 and the device transfer substrate 10 are aligned and bonded, so that the third substrate 20 is bonded to one side of the device 13 of the device transfer substrate 10, which is away from the first substrate 11, through the second bonding layer 21, and meanwhile, the suspended portion (i.e., the extension portion 123) of the supporting unit 12 is disconnected from the corresponding connection portion 122 under the bonding effect of the device 13, thereby implementing the transfer. In the device transfer method, immature laser processing is not needed, transfer of the component 13 can be achieved through the pressing effect between the substrates, and the process yield can be greatly improved.
The embodiment of the application further provides a display panel prepared by adopting the device transfer method.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application. Although the embodiments disclosed in the present application are described above, the embodiments are merely used for the understanding of the present application, and are not intended to limit the present application. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims.
Claims (15)
1. A device transfer substrate, comprising:
a first base substrate;
a plurality of supporting units arranged above the first substrate at intervals; each supporting unit comprises a supporting column, a connecting part and an extending part, wherein the connecting part is arranged on one side of the supporting column, which is far away from the first substrate base plate, and the extending part is connected with the connecting part; the orthographic projection of the extension part on the first substrate base plate does not cover the orthographic projection of the support column on the first substrate base plate, and the extension part does not contact the first substrate base plate;
and the plurality of components are arranged on one side of the extension part far away from the first substrate base plate.
2. The device transfer base plate according to claim 1, wherein a minimum width of a gap between an orthogonal projection of the component on the first substrate base plate and an orthogonal projection of the corresponding support post on the first substrate base plate is larger than a minimum width of a gap between an orthogonal projection of the component on the first substrate base plate and an orthogonal projection of a side edge of the corresponding extension portion away from the connecting portion on the first substrate base plate;
the area ratio of the orthographic projection of the support column on the first substrate base plate in the support unit to the orthographic projection of the support unit on the first substrate base plate is 12.5% -15%.
3. The device transfer substrate according to claim 2, wherein a side surface of the support pillar near the first substrate base plate has the same size as a side surface of the support pillar far from the first substrate base plate; or the like, or, alternatively,
the size of one side surface of the support column close to the first substrate base plate is larger than that of one side surface of the support column far away from the first substrate base plate.
4. The device transfer base plate according to claim 1, wherein a thickness of the extension portion in the support unit is equal to or greater than a height of the support column in a direction perpendicular to a surface of the first substrate base plate near the support unit.
5. The device transfer substrate according to claim 1, wherein the component is bonded to a side of the extension portion away from the first substrate base plate by a first adhesive layer.
6. The device transfer base plate according to claim 5, wherein a thickness of the first adhesive layer is smaller than a thickness of the component in a direction perpendicular to a surface of the first substrate base plate near the supporting unit.
7. The device transfer substrate according to claim 1, wherein a side of the component close to the first substrate is provided with an electrode pad.
8. A method of preparing a device transfer substrate, comprising:
providing a first substrate base plate;
forming a plurality of supporting units arranged at intervals above the first substrate base plate; each supporting unit comprises a supporting column, a connecting part and an extending part, wherein the connecting part is arranged on one side, far away from the first substrate base plate, of the supporting column; the orthographic projection of the extension part on the first substrate does not cover the orthographic projection of the support column on the first substrate, and the extension part does not contact the first substrate;
and arranging a plurality of components on one side of the extension part far away from the first substrate base plate.
9. The method according to claim 8, wherein forming a plurality of support units spaced above the first substrate base plate comprises:
forming a mask layer above the first substrate base plate;
forming a plurality of openings penetrating through the mask layer on the mask layer;
forming a supporting layer which covers the mask layer and is filled in the opening; the thickness of the supporting layer is larger than or equal to that of the mask layer;
patterning the support layer to form the plurality of support units arranged at intervals; the supporting columns of the supporting units are located in the openings, and the orthographic projections of the extending parts on the first substrate cover part of the orthographic projections of the mask layers on the first substrate.
10. The method according to claim 9, wherein disposing a plurality of components on a side of the extension portion away from the first substrate base includes:
providing a second substrate base plate; the second substrate comprises a second base and a plurality of components formed on the second base;
aligning the second substrate base plate with the first substrate base plate on which the supporting unit is formed, and removing the second base in the second substrate base plate so as to transfer the component to one side of the extension part away from the first substrate base plate;
and removing the residual mask layer on the first substrate base plate.
11. The manufacturing method according to claim 10, wherein before the step of aligning the second base substrate with the first base substrate on which the supporting unit is formed, the method further comprises:
and forming a first bonding layer on one side of the extension part far away from the first substrate base plate.
12. A device transfer method, comprising:
providing a device transfer substrate according to any one of claims 1 to 7 or prepared by the preparation method according to any one of claims 8 to 11;
providing a third substrate base plate, wherein a second bonding layer is arranged on one side of the third substrate base plate;
aligning and pressing the third substrate base plate and the device transfer base plate so that the third substrate base plate is bonded with one side, away from the first substrate base plate, of the device in the device transfer base plate through the second bonding layer, and the extension part of the supporting unit is disconnected with the corresponding connecting part under the pressing effect of the device;
removing the first substrate base plate and the supporting unit in the device transfer base plate to transfer the component to the third substrate base plate.
13. The device transfer method according to claim 12, wherein in the transfer base plate, the component is bonded to a side of the extension portion away from the first substrate base plate by a first bonding layer;
removing the first substrate base plate and the supporting unit in the device transfer base plate to transfer the component to the third substrate base plate, comprising the following steps:
removing the first substrate base plate, the support columns and the connection portions of the support unit in the device transfer base plate to transfer the components onto the third substrate base plate;
and removing the first bonding layer and the extension part bonded with the component.
14. The device transfer method according to claim 13, wherein the second adhesive layer is different in material from the first adhesive layer.
15. The device transfer method according to claim 12, wherein a thickness of the second adhesive layer is smaller than a thickness of the component in a direction perpendicular to a surface of the third substrate base plate for alignment with the device transfer base plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210161282.8A CN115172246A (en) | 2022-02-22 | 2022-02-22 | Device transfer substrate, manufacturing method thereof and device transfer method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210161282.8A CN115172246A (en) | 2022-02-22 | 2022-02-22 | Device transfer substrate, manufacturing method thereof and device transfer method |
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| CN115172246A true CN115172246A (en) | 2022-10-11 |
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| CN202210161282.8A Pending CN115172246A (en) | 2022-02-22 | 2022-02-22 | Device transfer substrate, manufacturing method thereof and device transfer method |
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