CN110459876A - A kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure - Google Patents
A kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure Download PDFInfo
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000011651 chromium Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 20
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 20
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 20
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 58
- 238000009826 distribution Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000000862 absorption spectrum Methods 0.000 description 9
- 238000005457 optimization Methods 0.000 description 8
- 229910000831 Steel Chemical group 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000010959 steel Chemical group 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 240000008042 Zea mays Species 0.000 description 5
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 5
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 5
- 235000005822 corn Nutrition 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002063 nanoring Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229960005196 titanium dioxide Drugs 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Aerials With Secondary Devices (AREA)
Abstract
The present invention relates to a kind of ultra wide band wave-absorbers based on two-dimentional simple metamaterial structure, what is solved is the technical issues of absorption efficiency is low, structure is complicated, work belt width, it include the superstructure and understructure overlapped by using the ultra wide band wave-absorber based on two-dimentional simple metamaterial structure, superstructure overlays in understructure；The superstructure is metal-dielectric-metal grating structure of the work of period setting within the scope of sub-wavelength；The understructure is multiple layer metal-dielectric to being constituted, and the metal is chromium, and the dielectric is SiO2, the bottom of understructure is the technical solution for the metal layer that thickness can block Electromgnetically-transparent, preferably resolves the problem, can be used in bolometer and solar absorption system.
Description
Technical field
The present invention relates to wave-absorber fields, and in particular to a kind of ultra wide band suction wave based on two-dimentional simple metamaterial structure
Body.
Background technique
Meta Materials are the substances being not present in nature, but the uniqueness incomparable with nature substance
Matter, especially in wave-absorber, bolometer, imaging system, sensor especially attracts attention in the application of infrared stealth.Super material
Expect that structure wave-absorber is one of them important branch, it is widely used in solar photovoltaic system, and aircraft is stealthy to be waited in application.
Recently, especially in the broadband wave-absorber of optical frequencies and middle infrared band by the concern of researcher.Researcher develops
Some nanostructures, such as triangle, nanometer grating, nanometer gap, nano-rings, in the metal structures such as nanometer stick array, these knots
The resonance absorbing of light in structure is widely studied theoretical and experimental.
In order to obtain higher absorbent properties, existing a kind of ultra wide band wave-absorber without photoetching, by titanium and titanium dioxide
Silicon alternately wave-length coverage self-energy absorption up to 98.3% of the manufactured perfect wave-absorber at 0.25-2 μm.There are one for the prior art
Kind by what is alternately formed with tungsten and silica, centre has the wave-absorber of the equilateral hollow array of cuboid, from ultraviolet
Line wave band is near infrared band, average absorption 98.9%.In addition, Zhu et al. utilize Slow-wave effect, Fabry-Perot resonance and
The synergistic effect of localized surface plasmons resonance enhancing, devises the average absorption in visible light and near infrared band and is up to
95% perfect absorption.In order to widen bandwidth of operation, Lee et al. is from the ultra wide band for numerically analyzing a kind of compound chromium-nickel grating
Wave-absorber, average absorption efficiency realize the perfect absorption more than 90% in 0.15-4.2 μm of wide wave-length coverage.Deng et al.
The ultra wide band wave-absorber for devising a kind of 13 layers of waveguide of conical hyperboloid gold-silica, covers 1-6 μm of wavelength model
It encloses, average absorption 92%.
The above wave-absorber in the prior art, is not that absorption efficiency is low, and it is exactly work belt width that structure is complicated, and these
Defect limits the extensive application of the wave-absorber designed by them.Therefore, the present invention, which provides, has broadband, high-selenium corn, structure
Simple perfection wave-absorber, to solve aforementioned technical problem.
Summary of the invention
That the technical problem to be solved by the present invention is to absorption efficiencies existing in the prior art is low, structure is complicated, work belt
The technical issues of width.A kind of new ultra wide band wave-absorber based on two-dimentional simple metamaterial structure is provided, it should be based on two dimension letter
The ultra wide band wave-absorber of single metamaterial structure has broadband, high-selenium corn, the simple feature of structure.
In order to solve the above technical problems, the technical solution adopted is as follows:
A kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure, it is described based on two-dimentional simple metamaterial structure
Ultra wide band wave-absorber includes the superstructure and understructure overlapped, and superstructure overlays in understructure；
The superstructure is metal-dielectric-metal grating structure of the work of period setting within the scope of sub-wavelength；
The understructure is multiple layer metal-dielectric to being constituted, and the metal is chromium, and the dielectric is SiO2, underlying metal
For copper.
The working principle of the invention: structure proposed by the present invention achieves over 88% in 0.4-5 μm of wave-length coverage
It absorbs, and in the wave-length coverage, average absorption is up to 97.54%.Ultra wide band perfection absorption is by surface plasma
Caused by excitation and Fabry-Perot resonance.Cr ratio Jin Hetong of the invention is more advantageous in the wave-length coverage in Meta Materials
Impedance matching is realized between structure and free space.
In above scheme, to optimize, further, in the metal-dielectric-metal grating structure, by from top to bottom
Cr layers of the grating of overlapping and quantity are greater than or equal to 1 Cr-SiO2Structure is constituted.And in grating, relatively on Cr-SiO2
Pair width be less than relatively under Cr-SiO2Pair width；
The understructure is by continuous metal chrome thin film layer and SiO2Film layer is alternately placed and is constituted.Structure is most
Bottom is the metallic copper of 300nm thickness, to block the transmission of electromagnetic wave.
Further, the Cr-SiO in the structure fringe2Pair quantity be 2, the Cr-SiO below the structure2Pair
Quantity is 3.
Further, the grating upper layer Cr with a thickness of 200nm-350nm.
Further, the grating upper layer Cr with a thickness of 322nm.
Fig. 2 is Cr-SiO2The absorption light of absorber made of the absorption spectrum and Jin Yutong of Absorber (abbreviation CSA)
Spectrum.In Fig. 2, the application of chromium is so that the absorbent properties of super structure wave-absorber are far superior to the suction for using metallic gold and steel structure in structure
Performance is received, CSA structure has better high-selenium corn bandwidth and absorption efficiency.
The huge spread of absorbent properties between CSA structure and golden structure and steel structure wave-absorber, can be used existing
It is calculated and is analyzed in detail based on impedance matching methods.
In order to analyze impedance matching condition, effective Media Theory has been used.Relationship between S parameter and impedance Z can be with table
It is shown as:
Wherein, S11, S21, n, k and d are respectively S parameter, effective refractive index, wave vector, and the thickness of proposed structure.
Impedance Z can indicate are as follows:
Because of bottom in the present embodiment sufficiently thick metal barrier transmitted wave, S21=0, impedance Z simplifies are as follows:
Calculate the relationship between S parameter and R (λ) are as follows:
When vertical incidence, the impedance Z of chromium structure and the relationship of wavelength X are as shown in Figure 3.Free impedance in spaceIt readily appreciates that, designed structure to obtain good absorption efficiency, then the resistance of structure
Resist (the Z=Z that should match with the impedance in space in operating frequency range0)。
(a) is the impedance of chromium structure wave-absorber in Fig. 3, is (b) impedance of golden structure and steel structure.From in Fig. 3 in (a) it is clear
Chu is seen, in 0.4-5 μm of wave-length coverage, the impedance value of the CSA structure of the present embodiment is in close proximity to 1, corresponding explanation
The wave-absorber of CSA structure has perfect the reason of absorbing.In Fig. 3 in (b), it can be deduced that, the impedance of golden structure and steel structure
Value is much larger than the impedance value of chromium structure.
For example, wavelength at 3.5 μm, be clear that in Fig. 2 chromium structure at this time be absorbed as 100%, correspond to
Minimum impedance frequency point (Z=1) in Fig. 3 in (a), and the absorption of golden structure and steel structure wants difference very compared with chromium structure at this time
It is more, correspond to Fig. 3 in (b) impedance value clearly with the impedance mismatching in air.Meanwhile in 4-5 μm of operating wavelength range
Interior, the impedance of CSA structure is compared with steel structure gold structure, can more be matched with the impedance in free space, and this result also with
Absorption spectrum is consistent.
In order to improve the absorption efficiency of Meta Materials, by increasing metal-dielectric pair in the upper surface of wave-absorber proposed
Quantity, and parameter optimization is carried out simultaneously, so that perfect absorb of the improved wave-absorber in 0.4-5 μ m wavelength range is more than
90%, and realize 98.49% average absorption.Cr has many application prospects in the utilization of Meta Materials wave-absorber, not only greatly
The big absorption efficiency for having widened perfect absorber, bandwidth of operation, while also greatly reducing the cost in actual production.
Beneficial effects of the present invention: the wave-length coverage of Cr-SiO2Absorber (CSA) structure of the invention at 0.4-5 μm
Interior, average absorption 97.54%, bandwidth of operation is 4.6 μm.In order to improve absorption efficiency, we increase the gold of structure
Category-dielectric pair quantity, and parameter optimization is carried out simultaneously.So that realizing that average absorption is in operating wavelength range
98.49% perfect absorption.Simultaneously when the incident angle of electromagnetic wave wave is less than 60 °, average absorption be also able to maintain 83% with
On.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1, the cellular construction schematic diagram of the Cr-SiO2 wave-absorber in embodiment 1.
Fig. 2, the absorption spectrum of the CSA structure in embodiment 1, metal replaces with absorber made of gold or copper in structure
Absorption spectrum.
Fig. 3, the impedance contrast schematic diagram of the impedance of chromium structure wave-absorber and golden structure, steel structure.
The normalized Distribution of Magnetic Field schematic diagram of Fig. 4, CSA structure.
Fig. 5, CSA structural thickness h1, h2 and average absorption efficiency function schematic diagram.
Fig. 6, preferred Cr-SiO in embodiment 22The cellular construction schematic diagram of wave-absorber.
Fig. 7, the normalized Distribution of Magnetic Field of wave-absorber at different wavelengths in embodiment 2.
Fig. 8, the absorption spectrum schematic diagram of CSA structural parameters x4, the x5 variation in embodiment 3.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, is not used to limit
The fixed present invention.
Embodiment 1
It is described simple based on two dimension the present embodiment provides a kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure
The ultra wide band wave-absorber of metamaterial structure includes the superstructure and understructure overlapped, and superstructure overlays lower layer's knot
On structure；The superstructure is metal-dielectric-metal grating structure of the work of period setting within the scope of sub-wavelength；Institute
Stating understructure is multiple layer metal-dielectric to being constituted, and the metal is chromium, and the dielectric is SiO2.If Fig. 1 is CSA
Structural schematic diagram, it be placed on by metal-dielectric-metal grating metal-dielectric layer support thin SiO2On layer.Fig. 1
Metal and dielectric in structure are chromium and SiO respectively2, underlying metal is copper.
It is continuous Cr film inlaying below superstructure in silicon dioxide layer, thickness is respectively as follows: h1, h2, h3,
H4, h5.The bottom of structure is the metallic copper of 300nm thickness, to block the transmission of electromagnetic wave.
The unit of superstructure is formed by stacking by Cr column and silicon dioxide layer, and thickness successively is respectively as follows: x1 from top to bottom,
X2, x3, their width are respectively as follows: d2, d1.Period is set as 300nm, to guarantee that the operation wavelength of wave-absorber is in sub-wavelength
The structure of range.
The structural parameters of the present embodiment: h1=7nm, h2=4nm, h3=314nm, h4=8nm, h5=461nm, x1=
310nm, x2=8nm, x3=322nm, d1=98nm, d2=178nm.
The present embodiment carries out two-dimensional numerical simulation using time-domain finite difference (FDTD).Cr and SiO2Refractive index
Using the measurement data of Palik.In analog simulation, mesh scale is disposed as 0.1nm on the direction x and the direction y, is much smaller than
Unit size, to ensure calculated result accuracy.
It is set as periodic boundary condition in the direction x, is set as perfect domination set (PML) boundary condition in the direction y.And it is right
In oblique incidence, it is set as Bloch boundary condition in the x-direction.The TM light of vertical incidence is polarized along negative y-direction incidence along the side x
To.Absorption efficiency is calculated by A=1-R-T, wherein A, R, T are that the normalization of structure absorbs, the efficiency of reflection and transmission.
Define average absorption ratioIt calculates vertical out of 0.4-5 μm wave-length coverage
Average absorption when incident, wherein λ1=0.4 μm, λ2=5 μm.
In this wave-length coverage, the CSA structure average absorption of the present embodiment is up to 97.54%, this high-selenium corn efficiency is excellent
In most wave-absorbers.
As shown in figure 5, influence of the thickness h 1 to absorption efficiency.In conjunction with Fig. 4, Fig. 5, in the wavelength band of the present embodiment,
Distribution of Magnetic Field when wavelength is longer is concentrated mainly on second layer SiO2In film layer, and in the few magnetic in this position of its all band
Field distribution.Therefore, when 1 parameter transformation of thickness h, the variation of absorption spectra is concentrated mainly in long wavelength range, and in other waves
It there is no variation in section.
In Fig. 5 in (a), in software emulation, when h1 changes to 20nm from 0nm, absorption curve is concentrated mainly on wavelength
Longer range.(b) shows the average absorption in the 0.4-5 μ m when h1 Parameters variation in Fig. 5.And it can see
When thickness h 1 is smaller, structure does not easily cause Fabry-Perot resonance and transfer surface plasma resonance at this time, causes to absorb
Efficiency reduces, and when h1 is larger, weaken absorption of the structure to electromagnetic wave.
In Fig. 5 (a) and (c) be respectively CSA structure absorption spectrum with thickness h 1, h2 and change.(b) and (d) is respectively
The relationship of CSA structural thickness h1, h2 and average absorption efficiency function.In Fig. 5 (c), to we show thickness of metal film
Influence of the h2 to absorption efficiency.In Fig. 4, Fig. 5 (a), in 5 (b), when parameter h2 variation, influence the wavelength of wave-absorber compared with
Long wave band.In Fig. 5 (c), only have the absorption efficiency transformation of long wavelength more violent in absorption spectra.In long wavelength range, when
Metal film layer h2 than it is relatively thin when, between the Cr film layer and Cr column Fabry-Perot resonance it is not significant, result in absorption
The reduction of efficiency.And the numerical value of h2 it is bigger when, the continuation of electromagnetic wave can be prevented to transmit downwards, thereby reduced to electromagnetic wave
It absorbs, the Distribution of Magnetic Field of Fig. 4, it can be seen that also have Distribution of Magnetic Field under second layer SiO2 film layer.
It is therefore preferred that the Cr-SiO positioned at top layer2Under to the SiO in layer structure2The thickness h 1 of layer is 5nm-
10nm, Cr layers of thickness h 2 is 2nm-7nm.
Further preferably, in continuous metal film layer, uppermost silica membrane layer with a thickness of 7nm, gold
The thickness h 2 for belonging to Cr film layer is 3nm.
The ultra wide band wave-absorber based on Cr and silica of the present embodiment, its operating wavelength range are 0.4-5 μm, In
Average absorption is 97.54% in this wave band.And pass through impedance transform method, it was demonstrated that the application of crome metal is than other metals more
It is able to achieve perfect absorption.
Embodiment 2
The present embodiment optimizes Cr-SiO in superstructure on the basis of embodiment 12Pair quantity.In the base of embodiment 1
On plinth, analyzes in structure and add Cr-SiO2To the influence to absorption efficiency.
(a) is Cr-SiO after optimization in Fig. 62Pair quantity be 2 structure chart.Cr-SiO in Fig. 6 in (b) structure2's
The asynchronous absorption efficiency of the number of plies and the average absorption in the case where studying wave band.Geometric parameter after optimization: P=300nm, h1=
8nm, h2=3nm, h3=340nm, h4=7nm, h5=488nm, x1=256nm, x2=3nm, x3=242nm, x4=9nm,
X5=290nm, d1=68nm, d2=114nm, d3=174nm, and the setting of grid precision is constant.
(b) illustrates the relationship of the number of plies and average absorption of crome metal in structure fringe in Fig. 6.It is worth noting that, working as
After the number of plies determines, we have carried out simulation optimization to all parameters of structure.Change when transforming to 3 from 2 respectively from the number of plies and from 3
When to 4, average absorption numerically increases 0.95% from 97.54% respectively and increases 0.41% from 98.49%.
Therefore, Cr-SiO2Pair quantity it is more and more when, absorbent properties are better, but the efficiency of average absorption is increased
Amplitude is smaller and smaller, and also increases the difficulty and structure complexity of manufacture wave-absorber.
Therefore, the present embodiment access amount is 2, and in the wave-length coverage studied, average absorption efficiency is very excellent: 98.49%,
The structure of wave-absorber is also relatively simple simultaneously.
Fig. 7: wave-absorber after optimization at different wavelengths normalized Distribution of Magnetic Field (| H |/| H_0 |).In Fig. 7, draw
Produce the Distribution of Magnetic Field of improved wave-absorber at different wavelengths.Pass through the comparison with Fig. 4, difference: suction wave at this time
For body when wavelength is 400nm, Distribution of Magnetic Field is more dispersed, mainly in following three positions: the upper surface of top layer's Cr column, and first
Between layer Cr film and second layer Cr film between second layer Cr film and underlying metal reflecting plate.
Something in common: the overall trend of Distribution of Magnetic Field are as follows: it is elongated with wavelength, gradually it is transferred to from the top layer of structure
Between chromium column and first layer chromium thin film.At the same time, the distribution in magnetic field is increasingly concentrated.
Embodiment 3
The thickness of thickness and SiO2 of the present embodiment on the basis of embodiment 2 for Cr layers of grating optimizes.Fig. 8:
(a) and (c) is chromium structural parameters x4, the absorption spectrum of x5 variation respectively.(b) and (d) is in the wavelength band studied respectively
Relationship between interior average absorption and chromium structural parameters x4, x5 variation.
Parameter optimization (from 0nm to 40nm) is carried out to the parameter x4 of structure after optimization, in 0.4 μm -5 μm of wave-length coverage
Average absorption such as in Fig. 8 shown in (b).
In conjunction with the analysis of Fig. 4 and Fig. 7, we are learnt, wavelength is concentrated mainly on most upper in 500nm or so, the distribution in magnetic field
In the silicon dioxide layer of layer, and its all band, in the position almost without Distribution of Magnetic Field.
Thus it is concluded that when silicon dioxide layer thickness changes, wavelength wave-absorber in the range of 500nm or so
Absorption efficiency variation it is more violent than the transformation of its all band.When the height x5 of the chromium column to top layer carries out parameter scanning (x5
=0-500nm), when height is relatively high, the electromagnetic coupling between grating is weakened, so that absorption efficiency reduces.However, working as
It when excessive height, hinders electromagnetic wave and transmits down, so as to cause the reduction of absorption efficiency.According to figure, the grating is selected
Cr layers of height is 200nm-350nm.
Optimally, the height for stating Cr layers of grating is x5=290nm.
Under TM polarized incident wave, absorption figure of the present embodiment structure in wave-length coverage is as shown in Figure 8.Simulation architecture table
It is bright: when the incident angle of incident light is less than 50 °, in 0.4-5 μm of operating wavelength range, average absorption be maintained at 92% with
On, and when incident angle is less than 60 °, average absorption can also maintain 83% or more high-selenium corn.
By increasing Cr column and SiO2Layer, in this wave band, so that average absorption efficiency increases 98.49%.And
Improved wave-absorber is to polarization insensitive, when the incident angle of incidence wave is less than 60 °, in 0.4-5 μm of wave-length coverage,
Average absorption is also 83% or more.The various advantages of the perfect ultra wide band wave-absorber of the present embodiment can will be easy in heat radiation
It is widely applied in meter and solar absorption system.
Although the illustrative specific embodiment of the present invention is described above, in order to the technology of the art
Personnel are it will be appreciated that the present invention, but the present invention is not limited only to the range of specific embodiment, to the common skill of the art
For art personnel, as long as long as various change the attached claims limit and determine spirit and scope of the invention in, one
The innovation and creation using present inventive concept are cut in the column of protection.
Claims (6)
1. a kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure, it is characterised in that: described simple super based on two dimension
The ultra wide band wave-absorber of material structure includes the superstructure and understructure overlapped, and superstructure overlays understructure
On；
The superstructure is metal-dielectric-metal grating structure of the work of period setting within the scope of sub-wavelength；It is described
Understructure is multiple layer metal-dielectric to being constituted, and the metal is chromium, and the dielectric is SiO2, the bottom of understructure
Layer is the metal layer for the transmission that thickness can block electromagnetic wave.
2. the ultra wide band wave-absorber according to claim 1 based on two-dimentional simple metamaterial structure, it is characterised in that: described
In metal-dielectric-metal grating structure, 1 Cr-SiO is more than or equal to by Cr layers of the grating and quantity that are overlapped from top to bottom2It is right
Structure constitute, in metal grating, relatively on Cr-SiO2Cr-SiO under being less than relatively to the width of structure2To the width of structure；
The understructure is by continuous Cr film layer and SiO2Film layer is alternately placed and is constituted, the bottom of understructure
For the metallic copper of 300nm thickness, for blocking the transmission of electromagnetic wave.
3. the ultra wide band wave-absorber according to claim 2 based on two-dimentional simple metamaterial structure, it is characterised in that: described
Cr-SiO in metal grating2Pair quantity be 2, the Cr-SiO of the understructure2Pair quantity be 3.
4. the ultra wide band wave-absorber according to claim 3 based on two-dimentional simple metamaterial structure, it is characterised in that: described
In understructure, the SiO of top layer2The thickness h 1 of film layer is 5-10nm, and the thickness h 2 of Cr film layer is 2-7nm.
5. the ultra wide band wave-absorber according to claim 4 based on two-dimentional simple metamaterial structure, it is characterised in that: described
In understructure, the SiO of top layer2The thickness h 1 of film layer is 7nm, and the thickness h 2 of Cr film layer is 3nm.
6. the ultra wide band wave-absorber according to claim 5 based on two-dimentional simple metamaterial structure, it is characterised in that: described
The Cr of grating at the middle and upper levels with a thickness of 200nm-350nm.
Priority Applications (1)
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