CN110927840A - Three-grating cascade structure and ultra-wideband absorber based on three-grating cascade structure - Google Patents
Three-grating cascade structure and ultra-wideband absorber based on three-grating cascade structure Download PDFInfo
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- CN110927840A CN110927840A CN201911175771.3A CN201911175771A CN110927840A CN 110927840 A CN110927840 A CN 110927840A CN 201911175771 A CN201911175771 A CN 201911175771A CN 110927840 A CN110927840 A CN 110927840A
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Abstract
The invention relates to a three-grating cascade structure and an ultra-wideband absorber, belonging to the technical field of optical devices. A three-grating cascade structure is composed of three grating cascade units, wherein the three grating cascade units sequentially comprise a metal tungsten block, a silicon dioxide medium and a strip-shaped metal tungsten from left to right. An ultra-wideband absorber based on a three-grating cascade structure, comprising: a base layer; a chromium film layer formed on the surface of the base layer; and a silicon nitride layer formed on the chromium film layer; and a graphene layer formed on the silicon nitride layer; and a three-grating cascade structure layer formed on the graphene layer. The absorber has wider spectral range and spans partial ultraviolet light, all visible light and partial infrared light; the absorption rate is high, especially in the near infrared band, and the absorption rate reaches more than 90%.
Description
Technical Field
The invention relates to a three-grating cascade structure and an ultra-wideband absorber, belonging to the technical field of optical devices.
Background
Metamaterials are a class of artificialThe composite material can realize resonant frequency and impedance matching through structural design, so that the working frequency and bandwidth can be adjusted and controlled randomly according to requirements; meanwhile, the structure has a depth sub-wavelength scale, so that the thickness of the metamaterial electromagnetic structure is very small and can reach one dozen of wavelengths, and the metamaterial electromagnetic structure is more beneficial to practical application than the traditional absorption structure. Since Landy et al developed the first broadband absorber by reducing reflection by matching with free-space impedance to maximize absorption, Landy et al became a hotspot of research due to their very broad application prospects in electromagnetic stealth, thermal radiation, thin-film solar cells, sensors and detection, etc.; in particular, the high-performance cross-frequency absorber can play an important role in different new fields and is favored. Such as T.
Obtaining 500-1500 spanning part of visible light and near infrared light dual-band spectrum by utilizing the triangular groove gold grating design structure; (T.
Surface-plasmon polariton responses B80,195407(2009)), which has a narrow absorption band, a complicated triangular groove manufacturing process, and a large difficulty in precise angle control. As Ji et al propose a structure in which metal particles and silicon oxide thin films are alternately deposited on the surface of a silver mirror, which achieves 300-. Further, as Dasol et al, a design structure of silica between the bottom layer chromium film and the top layer copper grating is used to obtain broadband absorption from visible light to near infrared band of 500-1200nm (Dasol Lee, Sun Yong Han, Yeong cryo Jeong, et al. polarization-sensitive tunable in visible and near-isolated regions. scientific Reports (2018)8:12393), and the absorption bandwidth of the structure is narrow and only 700 nm. Some methods have complex preparation and high cost, and are not beneficial to batch production; some of which are relatively simple in construction, but absorbThe bandwidth is narrow.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a three-grating cascade structure and an ultra-wideband absorber based on the three-grating cascade structure, wherein the absorber has wider absorption band covered by absorption and high absorption rate.
In order to achieve the purpose, the invention adopts the following technical scheme: a three-grating cascade structure is composed of three grating cascade units, wherein the three grating cascade units sequentially comprise a metal tungsten block, a silicon dioxide medium and a strip-shaped metal tungsten from left to right. The metal tungsten has better anti-reflection and strong transmission characteristics in the ultraviolet to infrared wave band, and meanwhile, the silicon dioxide with almost zero reflection in the ultraviolet to infrared wave band is used as an intermediate medium to form a horizontal cavity resonance mode after forming a three-grating cascade unit, and the cavity resonance mode is coupled with an optical diffraction mode, so that an incident light field is transmitted in a balanced manner.
In the three-grating cascade structure, the width ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten is 3 (1.8-2.5): (1.5-2.2). If the three grating width ratio exceeds the size range, the transmission spectrum range is narrowed or the transmittance is reduced.
In the three-grating cascade structure, the height ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten is 3 (7-10): (5-8). If the three-grating height ratio exceeds the size range, the transmission spectrum range is narrowed or the transmittance is reduced.
In the three-grating cascade structure, the period of the three-grating cascade unit is the sum of the widths of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten, and the sum is 900-1120 nm.
Preferably, the width of the metal tungsten block is 400-500 nm, and the height is 100-150 nm.
Preferably, the width of the silicon dioxide medium is 300-320 nm, and the height is 400-450 nm.
Preferably, the width of the strip-shaped metal tungsten is 200-300 nanometers, and the height of the strip-shaped metal tungsten is 300-350 nanometers.
The invention also provides an ultra-wideband absorber based on the three-grating cascade structure, which comprises:
a base layer, a first substrate layer,
the chromium film layer is formed on the surface of the substrate layer and is used for enhancing the reflection of light and increasing the absorption; and
a silicon nitride layer formed on the chromium film layer for increasing an absorption rate of an incident electromagnetic wave; and
the graphene layer is formed on the silicon nitride layer and used for increasing the intensity of a plasma resonance optical field and improving the absorption rate; and
the three-grating cascade structure layer is formed on the graphene layer and used for reducing reflection of incident electromagnetic waves, generating broadband resonance absorption and increasing the bandwidth and the absorption rate of the absorber.
In the ultra-wideband absorber, the substrate layer is made of silicon or silicon dioxide, and the thickness of the substrate layer is 0.1-5 mm.
In the ultra-wideband absorber, the thickness of the chromium film layer is 100-120 nm.
In the ultra-wideband absorber, the thickness of the silicon nitride layer is 100-500 nm.
In the ultra-wideband absorber, the thickness of the graphene layer is 30-100 nm.
The invention researches the absorption rate and bandwidth of incident electromagnetic waves under the condition of normal incidence of Transverse Magnetic (TM) polarized light waves, namely when the light waves vertically enter along the reverse direction of the Y axis. The ultra-wideband absorber comprises a substrate layer, a chromium film layer, a silicon nitride layer, a graphene layer and a three-grating cascade structure layer from bottom to top in sequence, wherein the three-grating cascade structure layer is formed by changing the materials and the thicknesses of various media and by adopting structural units formed by regularly arranging metal tungsten blocks, silicon dioxide media and strip-shaped metal tungsten with different thicknesses and widths, and meanwhile, the three-grating cascade structure layer on the top layer ensures the high absorption rate of a designed structure to incident electromagnetic waves by adopting a sub-wavelength structure. The thickness of the chromium film is preferably more than 100nm and is more than the attachment depth of the chromium film in the ultraviolet to infrared bands, so that no transmitted light exists, and the light wave absorption rate of the structure can be simplified to be A-1-R, wherein R is the spectral reflectivity of the structure design.
Compared with the prior art, the invention has the following advantages:
1. the material and physical size of the basic unit of the absorber can change the absorption characteristic of each absorber unit to the incident electromagnetic wave, and the plurality of basic units of the absorber are arranged according to a certain rule, so that the absorber has continuous macroscopic action to the incident electromagnetic wave. The three-grating cascade structure regularly arranges the metal tungsten blocks with different thicknesses and widths, the silicon dioxide medium and the strip-shaped metal tungsten to form a structural unit, thereby realizing the integral superposition of three absorption peaks.
2. Compared with the traditional absorber, the absorber disclosed by the invention has the advantages that the spectral range which can be covered by the absorber is wider, and the spectral range spans partial ultraviolet light, all visible light and partial infrared light; the absorption rate is high, especially in the near infrared band, and the absorption rate reaches more than 90%.
3. Because each part of the absorber adopts a strip-shaped structure, the absorber is convenient to prepare and low in cost.
Drawings
Fig. 1 is a schematic structural diagram of a three-grating cascade structure according to the present invention.
Fig. 2 is a front view of a three-grating cascade structure of the present invention.
Figure 3 is a front view of an ultra-wideband absorber of the present invention.
Fig. 4 is an absorption spectrum of the absorber in example 4.
Fig. 5 shows absorption spectra generated by the metal tungsten block 1, the silicon dioxide medium 2 and the strip-shaped metal tungsten 3 in the three-grating cascade structure of example 1 as the top layer of the absorber respectively.
FIG. 6 is an absorption spectrum of an absorber in example 5 of the present invention.
FIG. 7 is an absorption spectrum of an absorber in example 6 of the present invention.
FIG. 8 is an absorption spectrum of an absorber in comparative example 1 of the present invention.
FIG. 9 is an absorption spectrum of an absorber in comparative example 2 of the present invention.
FIG. 10 is an absorption spectrum of an absorber in comparative example 3 of the present invention.
FIG. 11 is an absorption spectrum of an absorber in comparative example 4 of the present invention.
In the figure, 1, a metal tungsten block; 2. a silicon dioxide dielectric; 3. a strip-shaped metal tungsten; 4. a base layer; 5. a chromium film layer; 6. a silicon nitride layer; 7. a graphene layer; 8. three grating cascade structure layers.
Detailed Description
The following is a description of specific embodiments of the present invention with reference to the drawings, and the technical solutions of the present invention will be further described, but the present invention is not limited to these embodiments.
Example 1
A three-grating cascade structure as shown in figures 1 and 2 is composed of three-grating cascade units, wherein the three-grating cascade units sequentially comprise a metal tungsten block 1, a silicon dioxide medium 2 and a strip-shaped metal tungsten 3 from left to right, the width of the metal tungsten block 1 is 427.352 nanometers, and the height of the metal tungsten block is 133.34 nanometers; the width of the silicon dioxide medium 2 is 309.137 nanometers, and the height is 416.8 nanometers; the width of the strip-shaped metal tungsten 3 is 235.431 nm, and the height is 333.34 nm.
Example 2
A three-grating cascade structure is composed of three-grating cascade units, wherein the three-grating cascade units sequentially comprise a metal tungsten block, a silicon dioxide medium and a strip-shaped metal tungsten from left to right, the width of the metal tungsten block is 453.272 nanometers, and the height of the metal tungsten block is 124.86 nanometers; the width of the silicon dioxide medium is 314.271 nanometers, and the height of the silicon dioxide medium is 415.82 nanometers; the width of the strip-shaped metal tungsten is 232.457 nanometers, and the height of the strip-shaped metal tungsten is 326.91 nanometers.
Example 3
A three-grating cascade structure is composed of three-grating cascade units, wherein the three-grating cascade units sequentially comprise a metal tungsten block, a silicon dioxide medium and a strip-shaped metal tungsten from left to right, the width of the metal tungsten block is 481.362 nanometers, and the height of the metal tungsten block is 138.74 nanometers; the width of the silicon dioxide medium is 318.176 nanometers, and the height of the silicon dioxide medium is 446.12 nanometers; the width of the strip-shaped metal tungsten is 284.65 nanometers, and the height of the strip-shaped metal tungsten is 341.71 nanometers.
Example 4
An ultra-wideband absorber based on a three-grating cascade structure in embodiment 1 is shown in fig. 3, and the absorber sequentially includes, from bottom to top:
a base layer 4 having a thickness of 0.2 mm,
a chromium film layer 5 with the thickness of 110 nanometers, which is formed on the surface of the substrate layer; and
a silicon nitride layer 6 with a thickness of 383.42 nm, formed on the chromium film layer; and
a graphene layer 7 having a thickness of 34 nm formed on the silicon nitride layer; and
the three-grating cascade structure layer 8 in embodiment 1 is formed on a graphene layer.
The absorption spectrum of the absorber obtained in this example is shown in fig. 4. As can be seen from the figure, the absorption spectrum range of the absorber is 0.2-2.58 microns, and comprises a part of ultraviolet light wave band, a whole visible light wave band, a whole near infrared light wave band and a part of short wave infrared wave band; the highest absorption rate can reach 97.4%.
Fig. 5 shows absorption spectra generated by the tungsten metal block 1, the silicon dioxide medium 2 and the strip-shaped tungsten metal 3 in the three-grating cascade structure of the embodiment 1 as the top layer part of the absorber respectively.
Example 5
An ultra-wideband absorber based on a three-grating cascade structure in embodiment 2 comprises the following components in sequence from bottom to top: FIG. 5
A base layer having a thickness of 0.2 mm,
the chromium film layer with the thickness of 105 nanometers is formed on the surface of the substrate layer; and
a silicon nitride layer with a thickness of 365.35 nanometers, formed on the chromium film layer; and
a graphene layer having a thickness of 51 nm formed on the silicon nitride layer; and
the three-grating cascade structure layer in embodiment 2 is formed on the graphene layer.
The absorption spectrum of the absorber obtained in this example is shown in fig. 6. As can be seen from FIG. 6, the absorption spectrum range of the absorber is 0.2-2.2 μm, including a part of ultraviolet band, a whole visible band, a whole near infrared band and a part of short wave infrared band; the highest absorption rate can reach 91.5 percent.
Example 6
An ultra-wideband absorber based on a three-grating cascade structure in embodiment 3 comprises the following components in sequence from bottom to top:
a base layer having a thickness of 0.2 mm,
a chromium film layer with the thickness of 115 nanometers, which is formed on the surface of the substrate layer; and
a silicon nitride layer with a thickness of 365.35 nanometers, formed on the chromium film layer; and
a graphene layer having a thickness of 85 nm formed on the silicon nitride layer; and
the three-grating cascade structure layer in embodiment 3 is formed on the graphene layer.
The absorption spectrum of the absorber obtained in this example is shown in fig. 7. As can be seen from FIG. 7, the absorption spectrum range of the absorber is 0.2-2.01 μm, including a part of ultraviolet band, a whole visible band, a whole near infrared band and a part of short wave infrared band; the highest absorption rate can reach 98.8%.
Comparative example 1
The comparative example only differs from example 4 in that the width ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten of the three grating cascade structure layers in the absorber of the comparative example is 3:1.5: 1.
The absorption spectrum of the absorber obtained in this comparative example is shown in fig. 8. As can be seen from fig. 8, the absorption of the absorber is reduced compared to example 4, and particularly, the absorption of the short-wavelength near-infrared band is significantly reduced.
Comparative example 2
The comparative example only differs from example 4 in that the width ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten of the three grating cascade structure layers in the absorber of the comparative example is 1:1: 1.
The absorption spectrum of the absorber obtained in this comparative example is shown in fig. 9. As can be seen from fig. 9, the absorption spectrum bandwidth of the absorber is only 1.2 μm compared to example 4, and the absorption rate in the infrared band is reduced significantly.
Comparative example 3
The comparative example only differs from example 4 in that the height ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten of the three grating cascade structure layers in the absorber of the comparative example is 3:5: 3.
The absorption spectrum of the absorber obtained in this comparative example is shown in fig. 10. As can be seen from FIG. 10, the absorption spectrum of the absorber is in the range of 0.2 to 2.33 μm as compared with example 4, but a low absorption region of 1.21 to 1.96 μm wavelength band occurs.
Comparative example 4
The comparative example only differs from example 4 in that the height ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten of the three grating cascade structure layers in the absorber of the comparative example is 3:12: 10.
The absorption spectrum of the absorber obtained in this comparative example is shown in fig. 11. As can be seen from fig. 10, the absorption spectrum of the absorber is in the range of 0.2 to 2.39 μm as compared with example 4, but a low absorption region of 1.47 to 2.09 μm band occurs.
In summary, the invention adopts the top-layer cascaded three-grating structure in the same unit, and realizes the superposition broadening of absorption spectrum bandwidth and the improvement of absorption rate through the compound coupling effect among the grating diffraction mode, the cavity resonance mode formed among different materials, the surface plasmon resonance mode and other modes.
While the invention has been described in detail and with reference to specific embodiments thereof, it will be apparent to one skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope thereof.
Claims (9)
1. A three-grating cascade structure is characterized by comprising three grating cascade units, wherein the three grating cascade units sequentially comprise a metal tungsten block, a silicon dioxide medium and strip-shaped metal tungsten from left to right.
2. The triple-grating cascade structure of claim 1, wherein the width ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten is 3 (1.8-2.5): (1.5-2.2).
3. The triple-grating cascade structure of claim 1, wherein the height ratio of the metal tungsten block, the silicon dioxide medium and the strip-shaped metal tungsten is 3 (7-10): (5-8).
4. The structure of claim 1, wherein the period of the triple-grating cascade unit is the sum of the widths of the tungsten block, the silicon dioxide medium and the tungsten stripe, and the sum is 900-1120 nm.
5. An ultra-wideband absorber based on the three-grating cascade structure of claim 1, wherein the absorber comprises:
a base layer;
a chromium film layer formed on the surface of the base layer; and
a silicon nitride layer formed on the chromium film layer; and
a graphene layer formed on the silicon nitride layer; and
and the three grating cascade structure layers are formed on the graphene layer.
6. The ultra-wideband absorber of claim 1, wherein the base layer is silicon or silicon dioxide, and the base layer has a thickness of 0.1-5 millimeters.
7. The ultra-wideband absorber of claim 1, wherein the thickness of the chromium film layer is 100nm and 120 nm.
8. The ultra-wideband absorber of claim 1, wherein the thickness of the silicon nitride layer is 100nm and 500 nm.
9. The ultra-wideband absorber of claim 1, wherein the graphene layer has a thickness of 30-100 nanometers.
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