CN110459479A - Barrier deposition method, underlying metal film of golden convex block and preparation method thereof - Google Patents
Barrier deposition method, underlying metal film of golden convex block and preparation method thereof Download PDFInfo
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- CN110459479A CN110459479A CN201810426236.XA CN201810426236A CN110459479A CN 110459479 A CN110459479 A CN 110459479A CN 201810426236 A CN201810426236 A CN 201810426236A CN 110459479 A CN110459479 A CN 110459479A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The present invention provides a kind of barrier deposition method, underlying metal film of golden convex block and preparation method thereof, the deposition method is used to form barrier layer group on ground, include forming barrier layer group on ground, which includes: to be sequentially depositing the barrier layer that at least three stackings are set along the direction far from ground to form the barrier layer group；Wherein, it deposits the barrier layer of top layer and deposits used process atmospheric pressures when used process atmospheric pressures are lower than remaining barrier layer of deposition when undermost barrier layer, to improve the barrier layer of top layer and the compactness on the undermost barrier layer.Barrier deposition method provided by the invention, can pass through PCT test, and without higher technological temperature, so as to avoid generating the event for seriously affecting product yield that TiW target misses the target etc..
Description
Technical field
The present invention relates to microelectronics technologies, and in particular, to the bottom gold of a kind of barrier deposition method, golden convex block
Belong to film and preparation method thereof.
Background technique
In current mainstream market, golden convex block (Gold Bumping) technology is widely used in liquid crystal display
In integrated circuit (IC) encapsulation field of (Liquid Crystal Display, LCD), and in the preparation process of golden convex block,
It is particularly critical to prepare good underlying metal film (Under-bumping Metallurgy, UBM).
Fig. 1 is the structure chart of existing golden convex block.Referring to Fig. 1, the preparation process of golden convex block are as follows: first on ground 1
Barrier layer 2 is formed, underlying metal film is used as.Carry out light blockage coating later, expose, plating and etc. complete the system of golden convex block 3
Make, finally removes extra barrier layer 2 using wet etching.
Fig. 2 is the structure chart on existing barrier layer, referring to Fig. 2, barrier layer includes TiW layer 21 and is arranged at the TiW layers
Au layer 22 on 21.Wherein, TiW layer 21 is adhered to ground 1, and isolation Au layer 22 for playing the role of.Au layer 22 is used
Make the seed layer of Au.During making above-mentioned TiW layer 21, higher process atmospheric pressures are generallyd use, so that TiW layer 21 is answered
Power is met the requirements, even if its stress reaches between -400Mpa to -0Mpa；Meanwhile during making above-mentioned Au layer 22, lead to
Frequently with lower process atmospheric pressures, the stress of Au layer 22 is maintained between 0Mpa-200Mpa, thus by entire barrier layer
Integrated stress controls between -100Mpa to 0Mpa, to meet technique requirement.
But in practical applications, there are following deficiencies for the prior art:
One uses higher process atmospheric pressures (being greater than 15mTorrorr) due to making above-mentioned TiW layer 21, this will lead to
TiW material is very loose, and TiW crystal grain is larger, thus can not (pressure cookertest, high pressure add by PCT test
Fast aging life-span test).
Second, the entire technical process for making above-mentioned TiW layer 21 is needed using higher work in order to improve film compactness
Skill temperature, this is most likely to produce the event for seriously affecting product yield that TiW target misses the target etc. in long-continued production.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of barrier deposition side is proposed
Method, underlying metal film of golden convex block and preparation method thereof, can pass through PCT test, and without higher
Technological temperature, so as to avoid generating the event for seriously affecting product yield that TiW target misses the target etc..
A kind of barrier deposition method is provided to achieve the purpose of the present invention, for forming barrier layer group on ground,
The barrier deposition method includes the steps that formation barrier layer group, the step include: on ground
The barrier layer that at least three stackings are set is sequentially depositing along the direction far from the ground to form the barrier layer group；Its
In, used process atmospheric pressures, which are lower than, when depositing the barrier layer and the undermost barrier layer of deposition of top layer deposits it
Used process atmospheric pressures when remaining barrier layer, to improve the densification on the barrier layer and the undermost barrier layer of top layer
Property.
Optionally, used process atmospheric pressures when each barrier layer are deposited by adjusting, and/or each by adjusting
The deposition thickness on the barrier layer, to adjust the integrated stress of the barrier layer group.
Optionally, it deposits the barrier layer of top layer and deposits used process gas when the undermost barrier layer
Pressure is respectively less than 3mTorr.
Optionally, used process atmospheric pressures are all larger than 10mTorr when depositing remaining described barrier layer.
Optionally, the first barrier layer, the second barrier layer and third barrier layer are sequentially depositing on ground；
The process atmospheric pressures used when depositing first barrier layer and third barrier layer by reducing, and make the barrier layer
The integrated stress of group levels off to negative value；The process atmospheric pressures used when alternatively, depositing second barrier layer by improving, and make institute
The integrated stress for stating barrier layer group levels off to positive value.
Optionally, the first barrier layer, the second barrier layer and third barrier layer are sequentially depositing on ground；
By reducing the deposition thickness on second barrier layer, while increasing first barrier layer and third blocking
The deposition thickness of layer, to make the integrated stress of the barrier layer group level off to negative value；Alternatively, by increasing second barrier layer
Deposition thickness, while reducing the deposition thickness on first barrier layer and the third barrier layer, to make the barrier layer group
Integrated stress level off to positive value.
Optionally, after depositing first barrier layer, and following step is carried out before depositing second barrier layer
It is rapid:
Adjusting is passed through the indoor process gas of process cavity, so that the indoor pressure of the process cavity is maintained at deposition described the
The process atmospheric pressures used when two barrier layers；
And after depositing second barrier layer, and followed the steps below before depositing the third barrier layer:
Adjusting is passed through the indoor process gas of process cavity, so that the indoor pressure of the process cavity is maintained at deposition described the
The process atmospheric pressures used when three barrier layers.
Optionally, the flow of the process gas is 20~40sccm.
As another technical solution, the present invention also provides a kind of preparation method of the underlying metal film of golden convex block,
Including depositing barrier layer group on ground using above-mentioned barrier deposition method provided by the invention；The barrier layer is TiW；
Seed layer is deposited on the barrier layer of top layer；The seed layer is Au.
As another technical solution, the present invention also provides a kind of underlying metal films of golden convex block, are mentioned using the present invention
The above-mentioned preparation method supplied is made.
The invention has the following advantages:
Barrier deposition method provided by the invention is used to form barrier layer group, including the shape on ground on ground
The step of at barrier layer group, the step include: to be sequentially depositing the barrier layer that at least three stackings are set along the direction far from ground to carry out shape
At barrier layer group；Wherein, used process atmospheric pressures are lower than when depositing the barrier layer of top layer and depositing undermost barrier layer
Used process atmospheric pressures when remaining barrier layer are deposited, to improve the densification on the barrier layer and undermost barrier layer of top layer
Property.The process atmospheric pressures as used by the barrier layer and deposition undermost barrier layer of deposition top layer are lower, this can be improved
The compactness on the barrier layer of top layer and undermost barrier layer, so as to increase the adherency on undermost barrier layer and ground
Property, while the vapor into the barrier layer of top layer can be reduced, so as to avoid barrier layer of the seed layer from top layer
It falls off, and then PCT test can be passed through using barrier layer made of above-mentioned barrier deposition method provided by the invention, and
And without higher technological temperature, so as to avoid generating the event for seriously affecting product yield that target misses the target etc..
The underlying metal film and preparation method thereof of gold convex block provided by the invention, by using above-mentioned barrier deposition
Method can pass through PCT test, and without higher technological temperature, miss the target so as to avoid generating target
Deng the event for seriously affecting product yield.
Detailed description of the invention
Fig. 1 is the structure chart of existing golden convex block；
Fig. 2 is the structure chart on existing barrier layer；
Fig. 3 A is the flow diagram of barrier deposition method provided by the invention；
Fig. 3 B is the structure chart on the barrier layer obtained using barrier deposition method provided by the invention；
Fig. 4 is the structure chart on the barrier layer that the barrier deposition method provided using specific embodiments of the present invention is obtained；
Fig. 5 is the flow diagram to form each layer barrier layer；
Fig. 6 is the curve graph that the integrated stress on barrier layer changes with process atmospheric pressures.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The barrier deposition method of offer, underlying metal film of golden convex block and preparation method thereof are described in detail.
Also referring to Fig. 3 A and Fig. 3 B, barrier deposition method provided by the invention on ground for forming barrier layer
Group.This method includes the steps that formation barrier layer group S1, step S1 include: on ground
The barrier layer that at least three stackings are set is sequentially depositing along the direction far from ground 5 to form barrier layer group.
Wherein, three layers of barrier layer are respectively the barrier layer 41 of top layer, undermost barrier layer 43 and positioned there between
Remaining barrier layer (42i ..., 42i+n).Also, it deposits the barrier layer 41 of top layer and deposits undermost 43 institute of barrier layer
The process atmospheric pressures of use are lower than process atmospheric pressures used by remaining barrier layer (42i ..., 42i+n) are formed, to improve top layer
Barrier layer 41 and undermost barrier layer 43 compactness.
Preferably, it is small that process atmospheric pressures used by the barrier layer 41 and the undermost barrier layer 43 of deposition of top layer are deposited
In 3mTorr, so that the barrier layer 41 of top layer and the compactness on undermost barrier layer 43 are met the requirements, that is, it is small to reach crystal grain
And fine and close effect reduces the barrier layer 41 for entering top layer to increase the adhesiveness on undermost barrier layer 43 and ground 5
Vapor, so as to avoid seed layer 6 from falling off from the barrier layer of top layer 41.
Additionally, it is preferred that, it deposits process atmospheric pressures used by remaining barrier layer (42i ..., 42i+n) and is greater than 10mTorr,
To obtain the relatively low barrier layer of compactness, which can play the role of adjusting the integrated stress of barrier layer group.
In practical applications, above-mentioned each barrier layer can be TiW.
Optionally, after completing above-mentioned steps S1, further includes:
Seed layer 6 is formed on the barrier layer of top layer 43.
Seed layer 6 is Au.
By using barrier, and adopt the barrier layer 41 for depositing top layer and the undermost barrier layer 43 of deposition
Top layer can be improved lower than process atmospheric pressures used by remaining barrier layer (42i ..., 42i+n) are deposited in process atmospheric pressures
Barrier layer 41 and undermost barrier layer 43 compactness, so as to increase the viscous of undermost barrier layer 43 and ground 5
Attached property reduces the vapor for entering the barrier layer 41 of top layer, so as to avoid seed layer 6 de- from the barrier layer of top layer 41
It falls.PCT test can be passed through using barrier layer made of above-mentioned barrier deposition method provided by the invention as a result, and
And without higher technological temperature, so as to avoid generating the event for seriously affecting product yield that target misses the target etc..
In addition, the barrier layer obtained using barrier deposition method provided by the invention, consistency is much higher than existing skill
The consistency for the film that art obtains, this makes the barrier layer higher to the fitness of target and depositing operation equipment, can apply
Depositing operation equipment and different types of target in different vendor's production.
Preferably, referring to Fig. 6, abscissa is process atmospheric pressures；Ordinate is the integrated stress of barrier layer group.Shown by Fig. 6
The curve that the integrated stress of barrier layer group out changes with process atmospheric pressures it is found that process atmospheric pressures are higher, answer by the entirety of barrier layer group
Power more levels off to positive value, that is, the numerical value of integrated stress is gradually increased to zero or zero or more.Conversely, process atmospheric pressures are lower, stop
The integrated stress of layer group more levels off to negative value, that is, the numerical value of integrated stress is gradually decrease to zero or zero or less.Based on this, lead to
Cross process atmospheric pressures used by setting each barrier layer of different formation, the integrated stress of adjustable barrier layer group, so that its
Reach ideal value.So-called ideal value refers to that the sum of the integrated stress of barrier layer group and the stress of seed layer go to zero.
In addition, since the thickness change on each barrier layer can also influence the integrated stress of barrier layer group, that is, top layer
The thickness on barrier layer 41 and undermost barrier layer 43 bigger while positioned there between remaining barrier layer (42i ..., 42i
+ n) the sum of thickness it is smaller, then the integrated stress of barrier layer group more levels off to negative value；Conversely, the barrier layer 41 of top layer and most
The thickness on remaining smaller while positioned there between barrier layer (42i ..., 42i+n) of the thickness on the barrier layer 43 of lower layer it
Bigger, then the integrated stress of barrier layer group more levels off to positive value.Based on this, by the thickness for setting different each barrier layers
Degree, to adjust the integrated stress of barrier layer group, to reach ideal value.
In practical applications, process atmospheric pressures used by each barrier layer of different formation can be only set, or can also
Only to set the thickness on different each barrier layers, or can also be set separately used by each barrier layer of different formation
The thickness of process atmospheric pressures and different each barrier layers, to adjust the integrated stress of barrier layer group, to reach ideal value.
The specific embodiment of barrier deposition method provided by the invention is described in detail below.Referring to Fig. 4,
In the present embodiment, the first barrier layer 43, the second barrier layer 42 and third barrier layer 41 are sequentially depositing on ground 5.Also, it is heavy
The process atmospheric pressures that the first barrier layer 43 of product and third barrier layer 41 sample are lower than the process atmospheric pressures that the second barrier layer 42 of deposition uses,
To which the compactness on the first barrier layer 43 and third barrier layer 41 is higher, to increase the adhesiveness on the first barrier layer 43 and ground 5,
Reduce the vapor for entering third barrier layer 41, so as to avoid seed layer 6 from falling off from the barrier layer of top layer 41, Jin Erke
To pass through PCT test, and without higher technological temperature, so as to avoid generating target miss the target etc. it is serious
Influence the event of product yield.
Preferably, the process atmospheric pressures used by reducing step S10 and step S30, and make barrier layer group, that is, the first resistance
The integrated stress of barrier 43, the second barrier layer 42 and third barrier layer 41 levels off to negative value, the negative value should be fixed at one
In range, such as -200Mpa to 0Mpa.Alternatively, the process atmospheric pressures used by improving step S20, and make the whole of barrier layer group
Body stress levels off to positive value.
And/or the deposition thickness by reducing the second barrier layer 42, while increasing the first barrier layer 43 and third barrier layer
41 deposition thickness, to make the integrated stress of barrier layer group level off to negative value；Alternatively, passing through the deposition for increasing the second barrier layer 42
Thickness, while the deposition thickness on the first barrier layer 43 and third barrier layer 41 is reduced, approach the integrated stress of barrier layer group
In positive value.Film adherability is helped to improve as a result,.
It should be noted that above-mentioned reduction or raising process atmospheric pressures refer to that use is relatively low when setting process atmospheric pressures
Or relatively high process atmospheric pressures, such as relatively low process atmospheric pressures are less than the atmospheric pressure value within the scope of 3mTorr, relatively
Higher process atmospheric pressures are greater than the atmospheric pressure value within the scope of 10mTorr, and the above-mentioned deposition thickness for increasing or reducing barrier layer refers to
When setting the deposition thickness on barrier layer, using the deposition thickness on larger or smaller barrier layer.
Used process gas when by adjusting the first barrier layer 43 of deposition, the second barrier layer 42 and third barrier layer 41
Pressure, and/or the deposition thickness by adjusting the first barrier layer 43, the second barrier layer 42 and third barrier layer 41, to adjust first
The integrated stress on barrier layer 43, the second barrier layer 42 and third barrier layer 41, to reach ideal value.
Preferably, it after depositing the first barrier layer 43, and is followed the steps below before depositing the second barrier layer 42:
Adjusting is passed through the indoor process gas of process cavity, so that the indoor pressure of process cavity is maintained at the second barrier layer of deposition
The process atmospheric pressures used when 42, to guarantee that the film characteristics on the second barrier layer 42 reach technique requirement.
And it is followed the steps below after depositing the second barrier layer 42, and before depositing third barrier layer 41:
Adjusting is passed through the indoor process gas of process cavity, so that the indoor pressure of process cavity is maintained at deposition third barrier layer
The process atmospheric pressures used when 41, to guarantee that the film characteristics on third barrier layer 41 reach technique requirement.
Preferably, the flow of above-mentioned process gas is 20~40sccm, preferably 30sccm, to guarantee normal starter.
The specific method for forming each layer barrier layer is described in detail below.Specifically, as shown in figure 5, forming each layer
Barrier layer the following steps are included:
S100 is passed through process gas into processing chamber, while opening for the indoor process gas of process cavity to be discharged
Valve；
The flow that the indoor process gas of process cavity is discharged by controlling above-mentioned valve regulated, can make in processing chamber
Air pressure reaches preset value；
S200 opens DC power supply, to excite the indoor process gas of process cavity to form plasma；
S300, deposition form barrier layer.
It should be noted that above-mentioned valve remains open state in above-mentioned steps S200 and step S300.
Preferably, in above-mentioned steps S100, the flow of process gas is 10~30sccm；In above-mentioned steps S200,
The flow of process gas is 15~35sccm；The output power of DC power supply is 400~600W；In above-mentioned steps S300, directly
The output power in galvanic electricity source is 2000~4000W.
Below it is a concrete technology formula of above-mentioned barrier deposition method:
Step 1 is passed through process gas into processing chamber, while opening for the indoor process gas of process cavity to be discharged
Valve.The technological parameter that the step 1 uses are as follows: process gas is argon gas, and flow is 6sccm；Process time is 3s.
Step 2 opens DC power supply, to excite the indoor process gas of process cavity to form plasma.The step 2 uses
Technological parameter are as follows: the flow of process gas remains unchanged；Valve is kept it turned on；The output power of DC power supply is
500W；Process time is 2s.
Step 3, deposition form the first barrier layer 43.The technological parameter that the step 3 uses are as follows: the flow of process gas is kept
It is constant；Valve is kept it turned on；The output power of DC power supply is 3000W；Process time is 30s.
Step 4 is passed through process gas into processing chamber, so that the indoor pressure of process cavity is maintained at deposition second and stops
The process atmospheric pressures that layer 42 uses.The technological parameter that the step 4 uses are as follows: process gas is argon gas, and flow is 30sccm；Valve
It keeps it turned on；DC power supply is closed；Process time is 30s.
Step 5, the conveying for keeping process gas.The technological parameter that the step 5 uses are as follows: the flow of process gas is kept not
Become；Valve is kept it turned on；Process time is 3s.
Step 6 opens DC power supply, to excite the indoor process gas of process cavity to form plasma.The step 6 uses
Technological parameter are as follows: the flow of process gas remains unchanged；Valve is kept it turned on；The output power of DC power supply is
500W；Process time is 2s.
Step 7, deposition form the second barrier layer 42.The technological parameter that the step 7 uses are as follows: the flow of process gas is kept
It is constant；Valve is kept it turned on；The output power of DC power supply is 3000W；Process time is 51s.
Step 8 is passed through process gas into processing chamber, so that the indoor pressure of process cavity is maintained at deposition third and stops
The process atmospheric pressures that layer 41 uses.The technological parameter that the step 8 uses are as follows: process gas is argon gas, and flow is 6sccm；Valve
It keeps it turned on；DC power supply is closed；Process time is 10s.
Step 9, the conveying for keeping process gas.The technological parameter that the step 9 uses are as follows: the flow of process gas is kept not
Become；Valve is kept it turned on；Process time is 3s.
Step 10 opens DC power supply, to excite the indoor process gas of process cavity to form plasma.The step 10 is adopted
Technological parameter are as follows: the flow of process gas remains unchanged；Valve is kept it turned on；The output power of DC power supply is
500W；Process time is 2s.
Step 11, deposition form third barrier layer 41.The technological parameter that the step 11 uses are as follows: the flow of process gas is protected
It holds constant；Valve is kept it turned on；The output power of DC power supply is 3000W；Process time is 30s.
Step 12 closes DC power supply；The conveying of stop process gas；Close valve.
It is found through experiments that, PCT verifying can be passed through using the barrier layer that above-mentioned process recipe obtains.
As another technical solution, the present invention also provides a kind of preparation method of the underlying metal film of golden convex block,
Including depositing barrier layer group on ground using above-mentioned barrier deposition method provided by the invention；Barrier layer is TiW.
Moreover, depositing seed layer on the barrier layer of top layer；Seed layer is Au.
The preparation method of the underlying metal film of gold convex block provided by the invention, by using above-mentioned barrier deposition side
Method can pass through PCT test, and without higher technological temperature, miss the target so as to avoid generating target
The event for seriously affecting product yield.
As another technical solution, the present invention also provides a kind of underlying metal films of golden convex block, use the present invention
The preparation method of the underlying metal film of the above-mentioned golden convex block provided is made.
The underlying metal film of gold convex block provided by the invention, by using the underlying metal film of above-mentioned golden convex block
Preparation method is made, and PCT test can be passed through, and without higher technological temperature, so as to avoid generating
The event for seriously affecting product yield that target misses the target etc..
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of barrier deposition method, for forming barrier layer group on ground, which is characterized in that the barrier deposition side
Method includes the steps that formation barrier layer group, the step include: on ground
The barrier layer that at least three stackings are set is sequentially depositing along the direction far from the ground to form the barrier layer group；Wherein,
Used process atmospheric pressures, which are lower than, when depositing the barrier layer and the undermost barrier layer of deposition of top layer deposits remaining
Used process atmospheric pressures when barrier layer, to improve the densification on the barrier layer and the undermost barrier layer of top layer
Property.
2. barrier deposition method according to claim 1, which is characterized in that deposit each barrier layer by adjusting
When used process atmospheric pressures, and/or the deposition thickness by adjusting each barrier layer, to adjust the barrier layer group
Integrated stress.
3. barrier deposition method according to claim 1, which is characterized in that deposit the barrier layer of top layer and sink
Used process atmospheric pressures are respectively less than 3mTorr when the undermost barrier layer of product.
4. barrier deposition method according to claim 1, which is characterized in that used when depositing remaining described barrier layer
Process atmospheric pressures be all larger than 10mTorr.
5. barrier deposition method according to claim 1, which is characterized in that be sequentially depositing the first blocking on ground
Layer, the second barrier layer and third barrier layer；
The process atmospheric pressures used when depositing first barrier layer and third barrier layer by reducing, and make the barrier layer group
Integrated stress levels off to negative value；The process atmospheric pressures used when alternatively, depositing second barrier layer by improving, and make the resistance
The integrated stress of barrier group levels off to positive value.
6. barrier deposition method according to claim 1, which is characterized in that be sequentially depositing the first blocking on ground
Layer, the second barrier layer and third barrier layer；
By reducing the deposition thickness on second barrier layer, while increasing first barrier layer and the third barrier layer
Deposition thickness, to make the integrated stress of the barrier layer group level off to negative value；Alternatively, by increasing the heavy of second barrier layer
Product thickness, while reducing the deposition thickness on first barrier layer and the third barrier layer, to make the whole of the barrier layer group
Body stress levels off to positive value.
7. barrier deposition method according to claim 5 or 6, which is characterized in that deposit first barrier layer it
Afterwards, and before depositing second barrier layer it follows the steps below:
Adjusting is passed through the indoor process gas of process cavity, so that the indoor pressure of the process cavity is maintained at deposition second resistance
The process atmospheric pressures used when barrier；
And after depositing second barrier layer, and followed the steps below before depositing the third barrier layer:
Adjusting is passed through the indoor process gas of process cavity, so that the indoor pressure of the process cavity is maintained at the deposition third resistance
The process atmospheric pressures used when barrier.
8. barrier deposition method according to claim 7, which is characterized in that the flow of the process gas be 20~
40sccm。
9. a kind of preparation method of the underlying metal film of gold convex block, which is characterized in that including appointing using in claim 1 to 8
Barrier deposition method described in one deposits barrier layer group on ground；The barrier layer is TiW；
Seed layer is deposited on the barrier layer of top layer；The seed layer is Au.
10. a kind of underlying metal film of gold convex block, which is characterized in that be made of preparation method as claimed in claim 9.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810426236.XA CN110459479B (en) | 2018-05-07 | 2018-05-07 | Barrier layer deposition method, bottom metal film of gold bump and preparation method thereof |
| PCT/CN2019/076740 WO2019214326A1 (en) | 2018-05-07 | 2019-03-01 | Deposition method, gold bump underlayer metal film and preparation method therefor |
| TW108107265A TWI729358B (en) | 2018-05-07 | 2019-03-05 | Deposition method, bottom metal film of gold bump and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810426236.XA CN110459479B (en) | 2018-05-07 | 2018-05-07 | Barrier layer deposition method, bottom metal film of gold bump and preparation method thereof |
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| CN110459479B CN110459479B (en) | 2021-07-13 |
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|---|---|
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| TW (1) | TWI729358B (en) |
| WO (1) | WO2019214326A1 (en) |
Citations (8)
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| WO2019214326A1 (en) | 2019-11-14 |
| TW201947056A (en) | 2019-12-16 |
| CN110459479B (en) | 2021-07-13 |
| TWI729358B (en) | 2021-06-01 |
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