CN105719963B - Substrate etching method - Google Patents
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- CN105719963B CN105719963B CN201410718770.XA CN201410718770A CN105719963B CN 105719963 B CN105719963 B CN 105719963B CN 201410718770 A CN201410718770 A CN 201410718770A CN 105719963 B CN105719963 B CN 105719963B
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Abstract
The present invention provides a kind of substrate etching method comprising following steps：Counterdie removal step, removal substrate surface are not photo-etched remaining photoresist on the region of glue mask covering；First etch step comprising the first sub-step and the second sub-step alternately at least twice, wherein the first sub-step is used for etched substrate, while lower electrode power is configured to modification figure pattern；Second sub-step is used to cool down substrate and discharges the charge accumulated in claw；Second etch step, for continuing etched substrate, while the etching height for being set as lower electrode power that figure to be made to reach required.Substrate etching method provided by the invention can improve the etching height of figure and solve the problems, such as that etching adhesion and the claw marking are apparent.
Description
Technical field
The present invention relates to microelectronics technology, more particularly to a kind of substrate etching method.
Background technology
PSS (Patterned Sapp Substrates, graphical sapphire substrate) technology is currently widely used one
The method that kind improves the light extraction efficiency of GaN (gallium nitride) base LED component.During carrying out PSS techniques, usually in substrate
Upper growth dry etching mask, and mask is carved by figure using photoetching process；Then ICP technology etched substrate tables are used
Face to form the figure needed, then removes mask, and uses and grow GaN film on the substrate surface of epitaxy technique after etching.
The planarization for the substrate trenches bottom that etching technics is obtained is better, is more conducive to subsequent epitaxy technique, extension GaN film
Crystal quality is higher.
Currently, the preparation of mask pattern mostly uses stepper.With the gradually development of PSS technologies, PSS is more next
More it is intended to use smaller size, has reached nanometer scale, i.e., so-called NPSS (Nanometer Patterned Sapp
Substrates, nano-patterned sapphire substrate).
The etching technics generally use nanometer embossing of existing NPSS a kind of prepares mask pattern, as shown in Figure 1, being
The preparation flow schematic diagram of photoresist mask pattern.A layer photoresist 2 is coated on the surface of substrate 1 first, then using receiving
Rice impression block 3 prepares required figure on photoresist 2.After the preparation for completing mask pattern, etched using ICP technologies
Substrate surface.Typical substrate etching method includes mainly main etch step and over etching step, wherein main etch step is used for
The region of glue mask covering is not photo-etched on etched substrate surface, until reaching target etch depth；Over etching step is for repairing
Adorn the figure pattern of substrate.
But above-mentioned substrate etching method can have the following defects in practical applications：
First, the thickness of the photoresist mask obtained using nanometer embossing is smaller and graphic width is smaller, and also
There are tens nanometers of counterdies due to glue residua phenomenon for meeting, this makes before the etching for carrying out substrate, needs removal first should
Counterdie, and since the counterdie is smaller (about 0.5~0.6) relative to the etching selection of substrate, thus be not easy to be formed height compared with
High NPSS figures.Although can be high to increase etching by using higher chiller temperature, to increase etching selection ratio
Degree, but higher chiller temperature easy tos produce etching adhesion phenomenon, as shown in Figure 2.
Second, since ICP equipment is usually mechanically fixed substrate using Aluminum cover, which generally uses four claw pressures
The firmly edge of substrate top surface.There are the apparent claw markings for the substrate surface obtained using above-mentioned substrate etching method, and
The width of the claw marking is one times of claw developed width or more, as shown in Figure 3.In addition, being near claw as shown in Figure 4 A
Substrate figure.As seen from the figure, the substrate figure near claw is asymmetric.Moreover, being the reflection of substrate surface as shown in Figure 4 B
Rate distribution map.As seen from the figure, substrate figure is different from other regions in the reflectivity of claw near zone, causes claw attached
Close figure pattern is asymmetric.
Invention content
The present invention is directed at least solve one of the technical problems existing in the prior art, it is proposed that a kind of substrate etching side
Method can improve the etching height of figure and solve the problems, such as that etching adhesion and the claw marking are apparent.
A kind of substrate etching method is provided to achieve the purpose of the present invention, is included the following steps：
Counterdie removal step removes remaining photoetching on the region that the substrate surface is not covered by the photoresist mask
Glue；
First etch step comprising the first sub-step and the second sub-step alternately at least twice, wherein described
First sub-step is used for etched substrate, while lower electrode power is configured to modification figure pattern；Second sub-step
For cooling down the substrate and discharging the charge accumulated in claw；
Second etch step for continuing etched substrate, while setting lower electrode power to figure is made to reach required
Etching height.
Preferably, it in second sub-step, using the gas for being not involved in reaction as etching gas, simultaneously closes off down
Electrode supply；Also, cool down the substrate using back of the body blowing.
Preferably, the back of the body of the back of the body blowing blows the value range pressed in 8T~10T.
Preferably, the value range of the flow of the back of the body blowing is in 30~50sccm.
Preferably, the gas for being not involved in reaction includes nitrogen.
Preferably, the process time of second sub-step is 0.5~1min.
Preferably, the process time of first sub-step is 2~4min.
Preferably, during the entire process of carrying out first etch step, top electrode power supply remains open state.
Preferably, the lower electrode power that different first sub-steps uses is different, and each first sub-step
The correspondence that the residual thickness of the lower electrode power of use and photoresist mask when carrying out first sub-step is positively correlated, with
So that the etching selection ratio of each first sub-step reaches unanimity.
Preferably, the value range for the lower electrode power that each first sub-step uses is in 200~400W.
Preferably, in second etch step, the value range of lower electrode power is in 200~300W.
Preferably, in the counterdie removal step, the value range of lower electrode power is in 400~500W.
Preferably, in first etch step and the second etch step, the value range of chiller temperature 30~
50℃。
The invention has the advantages that：
Substrate etching method provided by the invention, is divided into counterdie removal step, first by the whole process of etched substrate
Etch step and the second etch step.Wherein, the first etch step is by the first, second sub-step group alternately at least twice
At the first sub-step is used in etched substrate；Second sub-step is used to cool down substrate and discharges the charge accumulated in claw.It borrows
The second sub-step is helped, it can be to avoid the excessively high caused etching adhesion phenomenon of underlayer temperature, so as to allow the first sub-step energy
Higher chiller temperature is enough used, to reduce figure bottom width；Simultaneously as the charge accumulated in claw is released, this can be with
The electric field strength for making the region near claw on the surface of a substrate and the electric field strength in other regions reach unanimity, to not only may be used
It is asymmetric to avoid the figure pattern near claw, but also the problem of the claw marking can be improved.
In addition, lower electrode power used by the first sub-step can play the role of modifying figure pattern, it may finally
Obtain the triangular morphology without inflection point；And lower electrode power used by the second etch step can play and improve etching height
Effect, meets technological requirement with the figure finally obtained.
Description of the drawings
Fig. 1 is the preparation flow schematic diagram of photoresist mask pattern；
Fig. 2 is the scanning electron microscope (SEM) photograph that etching adhesion phenomenon occurs in substrate figure；
Fig. 3 is the scanning electron microscope (SEM) photograph of the substrate surface obtained using existing substrate etching method；
Fig. 4 A are the scanning electron microscope (SEM) photograph of the substrate figure near claw；
Fig. 4 B are the distribution graph of reflectivity of substrate surface；
Fig. 5 is the flow diagram of substrate etching method provided in an embodiment of the present invention；
Fig. 6 A are the schematic diagram that electron stream moves direction on claw；
Fig. 6 B are claw potential and wafer surface potential in two kinds of pair for adding and not adding the second sub-step
Than figure；
Fig. 6 C are sweeping for the substrate figure near the claw obtained using substrate etching method provided in an embodiment of the present invention
Retouch electron microscope；
Fig. 6 D are the scanning electron microscope (SEM) photograph of the substrate surface obtained using substrate etching method provided in an embodiment of the present invention；
Fig. 7 A are the scanning electron microscope (SEM) photograph for completing the substrate figure that the first etch step obtains；And
Fig. 7 B are the scanning electron microscope (SEM) photograph of the substrate figure obtained using substrate etching method provided in an embodiment of the present invention.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention
The substrate etching method of offer is described in detail.
Substrate etching method provided by the invention comprising counterdie removal step, the first etch step and the second etching step
Suddenly.Wherein, the first etch step further comprises the first sub-step and the second sub-step alternately at least twice.
Below by taking the first sub-step and the second sub-step technical solution alternately twice as an example, to provided by the invention
Substrate etching method is described in detail.Specifically, Fig. 5 is the flow chart element of substrate etching method provided in an embodiment of the present invention
Figure.Referring to Fig. 5, substrate etching method includes the following steps：
S1, removal substrate surface are not photo-etched remaining photoresist on the region of glue mask covering；
S2, etched substrate, while lower electrode power is configured to modification figure pattern；
The charge accumulated in S3, cooling substrate and release claw；
S4, etched substrate, while lower electrode power is configured to modification figure pattern；
The charge accumulated in S5, cooling substrate and release claw；
S6, etched substrate, while the etching height for being set as lower electrode power that figure to be made to reach required.
Step S1 is counterdie removal step, and to eliminate influence of the remaining photoresist to etching selection ratio, removing counterdie can
Improving etching selection ratio to about 0.92.Counterdie is remaining photoresist.Preferably, the value range of lower electrode power
In 400~500W, this can improve the rate of etching counterdie, shorten etch period, so as to avoid the occurrence of adhesion phenomenon.
In practical application, the etching counterdie time can be determined according to the thickness of counterdie, usually 30s~1min.Above-mentioned counterdie removal step
Rapid technological parameter is preferably：Chamber pressure is 2~3mT；Upper electrode power is 1400W；Using BCl3As etching gas, and
Flow is 60~100sccm；Chiller temperature (cooler is for controlling substrate temperature) is 30~50 DEG C；It is 4 that the back of the body, which is blown and pressed,
~6T.The back of the body blow pressure refer between substrate lower surface and the loading end for the pedestal for carrying the substrate have gap, by this
Back of the body blowing is passed through in gap to realize the heat exchange between pedestal and substrate, so as to play the work for adjusting underlayer temperature
With the air pressure in the gap is to carry on the back pressure of blowing.
In the present embodiment, the first sub-step and the second sub-step alternately twice, i.e. step S2~step S5.Change sentence
It talks about, during the entire process of carrying out the first etch step, carries out the etching process (S2 and S4) of substrate at twice, and carve twice
Primary cooling substrate is carried out between erosion process and discharges the process (S3) of the charge accumulated in claw, and in last time the
Primary cooling substrate is also carried out between one sub-step (S4) and the second etch step (S6) and discharges the charge accumulated in claw
Process (S5).
By above-mentioned second sub-step, can to caused by continuous etching underlayer temperature accumulation increase and play alleviation and make
With to can not only avoid the occurrence of etching adhesion phenomenon, but also it is higher cold to can also allow for the first sub-step that can use
But device temperature (cooler is for controlling underlayer temperature).Chiller temperature is higher, and the figure bottom width of acquisition is smaller, so as to full
Requirement of the foot to broadening (difference of groove bottom width and the bottom width of mask pattern before etching after etching).
In addition, in ICP equipment, generally use Aluminum cover, Aluminum cover utilizes four claws (or claw of other quantity)
The edge of substrate surface is pushed down, to which substrate to be fixed on pedestal.In etching process, as shown in Figure 6A, 1 surface of substrate is inhaled
With electronics, the part in the electronics can be flow on each claw 2, with the increase of etch period, be accumulated on claw
Charge can be more and more, and the electric field strength in the region on substrate surface near claw is caused to be higher than the electric field strength in other regions,
The potential profile of substrate surface when not adding the second sub-step as shown in Fig. 6 B, to cause to push down neighbouring figure shape
Looks are asymmetric and substrate surface there are the apparent claw markings.But substrate etching method provided by the invention passes through by
The charge that accumulates in two sub-steps release claw, can make the region near claw on the surface of a substrate electric field strength and other
The electric field strength in region reaches unanimity, the potential profile of substrate surface when adding the second sub-step as shown in Fig. 6 B, from
And can not only avoid the figure pattern near claw asymmetric, but also the problem of the claw marking can be improved.Such as Fig. 6 C and
Shown in Fig. 6 D, the substrate figure obtained using substrate etching method provided by the invention, figure pattern near claw
Symmetry significantly improves, and the claw marking on substrate surface is also obviously reduced.
Furtherly, in the second sub-step, using the gas for being not involved in reaction as etching gas, lower electricity is simultaneously closed off
Pole power supply；Also, cool down substrate using back of the body blowing.Specifically, this step is by using gas (such as the nitrogen for being not involved in reaction
Gas) and lower electrode supply is closed, it can only play the role of cooling substrate and discharge the charge accumulated in claw, without to lining
Bottom performs etching.Preferably, the back of the body for carrying on the back blowing blows the value range pressed in 8T~10T；Carry on the back the value of the flow of blowing
Range is blown this is because blowing to press using the back of the body of higher back of the body blowing (such as helium) with the lower back of the body in 30~50sccm
The flow of body can effectively reduce underlayer temperature, so as to avoid the occurrence of etching adhesion problems.When the technique of the second sub-step
Between can be set, preferably 0.5~1min according to the amount of charge accumulated on the etch period and claw of the first sub-step.The
Technological parameter is preferably used by two sub-steps：Chamber pressure is 2~3mT；Upper electrode power is 1400W；It employs nitrogen as
For etching gas, and flow is 30~50sccm；Chiller temperature is 30~50 DEG C；The back of the body blows pressure as 8~10T.
In the first sub-step, while etched substrate, it is also necessary to use suitable lower electrode power, play modification figure
The effect of shape pattern, finally to obtain the triangular morphology of no inflection point.Preferably, lower electrode power is 200~400W.The lower electricity
Pole power can be according to the etch resistance of photoresist mask, that is, the speed that photoresist is shunk is set, it is preferred that lower electrode work(
The correspondence that the thickness of rate and photoresist mask is positively correlated, that is, the thickness of photoresist is smaller, then the lower electrode power used
BRF is lower；Conversely, the thickness of photoresist is bigger, then the lower electrode power BRF used is higher.For example, for applied to NPSS's
Photoresist mask, usually height and bottom width are 300~600nm, (are highly relative to the photoresist mask applied to PSS
2.2~3um, bottom width are 2.0~2.3um) it is very small, this so that the photoresist mask applied to NPSS is easy to premature contraction,
For this purpose, lower electrode power should be set according to the time that the photoresist mask applied to NPSS starts to shrink at.
Preferably, since before carrying out the first different sub-steps, the residual thickness of photoresist mask is gradually reduced, because
And during carrying out different first sub-steps, the time that photoresist mask starts to shrink at is also different, for this purpose, can into
When each first sub-step of row, different lower electrode powers is targetedly used, that is, under the first different sub-steps uses
Electrode power is different, while the lower electrode power that uses of each first sub-step and carrying out photoresist mask when first sub-step
The correspondence that is positively correlated of residual thickness so that the etching selection ratio of each first sub-step reaches unanimity, so as to
After completing the first etch step, finally to obtain the triangular morphology without inflection point, as shown in Figure 7 A.
Preferably, the process time of each first sub-step is 2~4min.In other words, in the entire of the first etch step
In the process, at interval of 2~4min, second sub-step is carried out, to cool down substrate in time, to avoid the hair of adhesion phenomenon
It is raw.
First sub-step use technological parameter be preferably：Chamber pressure is 2~3mT；Upper electrode power is 1400W；Under
Electrode power is 200~400W；Using BCl3As etching gas, and flow is 60~100sccm；Chiller temperature be 30~
50℃；The back of the body blows pressure as 4~6T.
In addition preferred, during the entire process of carrying out the first etch step, top electrode power supply remains open state,
That is, carrying out between the first sub-step and the second sub-step and between the second sub-step of last time and the second etch step
When switching, top electrode power supply is not closed.The purpose for the arrangement is that in order to avoid caused by closing top electrode power supply particle fall
The problem of falling, while photoresist mask can also be avoided to be consumed due to the indoor Cl free radicals of reaction chamber react,
To cause etching selection ratio to reduce, the problem of height reduces is etched.
Step S6 is the second etch step, and lower electrode power used by the step is dropped relative to the first sub-step
It is low, to play the purpose for the etching height for increasing figure.Its principle is to be based on：Due to complete above-mentioned first etch step it
Afterwards, the bottom width of the substrate figure of acquisition and height are smaller (for NPSS, since its photoresist nature determines photoresist figure
The bottom width of shape is smaller, thus the substrate figure of NPSS etching acquisitions and height meeting smaller).Therefore, substrate provided by the invention is carved
Erosion step is the figure pattern of substrate to be modified using the first etch step, and increase etching height using the second etch step,
This is completely opposite with the sequence of operation of main etch step in the prior art and over etching step.It, can by the second etch step
With do not have to concern because the first etch step using higher lower electrode power modify figure pattern, caused by etching height not
The case where meeting the requirements.Preferably, in a second etching step, the value range of lower electrode power is in 200~300W.
In addition, due to also having carried out primary cooling substrate and release between the first etch step and the second etch step
The process of the charge accumulated in claw, that is, the second sub-step of last time (S5) in the first etch step.This can allow
Two etch steps use higher chiller temperature, so as to avoid generate etching adhesion under the premise of, effective control figure
The bottom width of shape.
Second sub-step use technological parameter be preferably：Chamber pressure is 1.5~3mT；Upper electrode power is 1400W；
Lower electrode power is 200~300W；Using BCl3As etching gas, and flow is 60~100sccm；Chiller temperature is 30
~50 DEG C；The back of the body blows pressure as 4~6T.
Fig. 7 B are the scanning electron microscope (SEM) photograph of the substrate figure obtained using substrate etching method provided in an embodiment of the present invention.By
Fig. 7 B it is found that using substrate etching method provided by the invention, the etching height of figure can be improved and solve etching adhesion with
And the problem that the claw marking is apparent.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of substrate etching method, which is characterized in that include the following steps：
Counterdie removal step removes the substrate surface and is not photo-etched remaining photoresist on the region of glue mask covering；
First etch step comprising the first sub-step and the second sub-step alternately at least twice, wherein described first
Sub-step is used for etched substrate, while lower electrode power is configured to modification figure pattern；Second sub-step is used for
The charge accumulated in the cooling substrate and release claw；
Second etch step, for continuing etched substrate, while the etching for being set as lower electrode power that figure to be made to reach required
Highly.
2. substrate etching method as described in claim 1, which is characterized in that in second sub-step, using being not involved in
The gas of reaction simultaneously closes off lower electrode supply as etching gas；Also, cool down the substrate using back of the body blowing.
3. substrate etching method as claimed in claim 2, which is characterized in that the value model of the back of the body air blowing pressure of the back of the body blowing
It is trapped among 8T~10T.
4. substrate etching method as claimed in claim 2, which is characterized in that the value range of the flow of the back of the body blowing exists
30~50sccm.
5. substrate etching method as claimed in claim 2, which is characterized in that the gas for being not involved in reaction includes nitrogen.
6. substrate etching method as described in claim 1, which is characterized in that the process time of second sub-step is 0.5
~1min.
7. substrate etching method as described in claim 1, which is characterized in that the process time of first sub-step be 2~
4min。
8. substrate etching method as described in claim 1, which is characterized in that in the entire mistake for carrying out first etch step
Cheng Zhong, top electrode power supply remain open state.
9. substrate etching method as described in claim 1, which is characterized in that the lower electricity that different first sub-steps uses
Pole power is different, and the lower electrode power that uses of each first sub-step and carries out photoresist mask when first sub-step
The correspondence that is positively correlated of residual thickness so that the etching selection ratio of each first sub-step reaches unanimity.
10. substrate etching method as claimed in claim 9, which is characterized in that the lower electrode work(that each first sub-step uses
The value range of rate is in 200~400W.
11. substrate etching method as described in claim 1, which is characterized in that in second etch step, lower electrode work(
The value range of rate is in 200~300W.
12. substrate etching method as described in claim 1, which is characterized in that in the counterdie removal step, lower electrode work(
The value range of rate is in 400~500W.
13. substrate etching method as described in claim 1, which is characterized in that etched in first etch step and second
In step, the value range of chiller temperature is at 30~50 DEG C.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254809A (en) * | 2011-08-04 | 2011-11-23 | 上海蓝光科技有限公司 | Dry etching method for patterned sapphire substrate |
| CN102456545A (en) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Patterned substrate etching method |
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| TW200816508A (en) * | 2006-09-18 | 2008-04-01 | Univ Nat Central | Fabrication methods of patterned sapphire substrate and light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456545A (en) * | 2010-10-21 | 2012-05-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Patterned substrate etching method |
| CN102254809A (en) * | 2011-08-04 | 2011-11-23 | 上海蓝光科技有限公司 | Dry etching method for patterned sapphire substrate |
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