CN110459471A - A kind of preparation method of double-gate structure GaN base pH sensor - Google Patents
A kind of preparation method of double-gate structure GaN base pH sensor Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 31
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 230000007704 transition Effects 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000035945 sensitivity Effects 0.000 claims abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 238000005036 potential barrier Methods 0.000 claims abstract description 5
- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 claims abstract description 4
- 102000013275 Somatomedins Human genes 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 24
- 229910001020 Au alloy Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000846 In alloy Inorganic materials 0.000 claims description 3
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 2
- 230000005533 two-dimensional electron gas Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
The present invention relates to semiconductor transducer technical fields, more particularly, to a kind of preparation method of double-gate structure GaN base pH sensor.The following steps are included: dielectric layer of the S1. GaN transition layer that growing high resistant insulate in N-shaped GaN substrate as backgate；S2. GaN channel layer is grown in the GaN transition layer of high resistant insulation；S3. the thin barrier layer of AlGaN is grown in channel layer surface；S4. deposit ohmic contacts electrode；S5. somatomedin layer covers electrode and top-gated pole search coverage is only exposed in access area.A kind of preparation method of double-gate structure GaN base pH sensor provided by the invention, grows thin potential barrier AlGaN layer, covers sensitive zones using silicon nitride passivation with the two-dimensional electron gas and mobility of outer portion promotion access area；Using thin barrier layer construction, it can be achieved that high mutual conductance, and the capacitive coupling of back-gate electrode and channel is combined to act on, to obtain the detection sensitivity for breaking through the Nernst limit.
Description
Technical field
The present invention relates to semiconductor transducer technical fields, more particularly, to a kind of double-gate structure GaN base pH sensor
Preparation method.
Background technique
PH sensor is that the pH value for measuring liquid medium, progress precision monitor and the indispensable of science certification examine device,
In environment, medical treatment, industry, agricultural and biology etc. using being had important application in solution field.With science and technology it is continuous
Development, it is complete based on ion sensitive FET (ISFET:Ion Sensitive Field Effect Transistor)
Solid pH sensor is stable, easy to carry due to having the characteristics that small size, non-friable, high sensitivity, performance, and by blueness
It looks at.Currently, Si base MOSFET due to cheap price, can the features such as volume production compatible with traditional cmos process and good reliability
As the main material for preparing ISFET pH sensor.However the research and development of Si base pH sensor gradually tend to theoretical limit, due to
The performance deficiency of material itself cannot work in high temperature (lower than 150 degree) and some particular solutions (hydrofluoric acid etc.) environment, this
The stability and reliability of kind pH sensor not can guarantee also, significantly limit the practicality.
Recently, common ISFET gradually expands to group III-nitride base ISFET and oxidation from typical Si base ISFET
ISFET based on object semiconductor TFT.Compared to glass electrode, ISFET no longer needs built-in reference electrode, simplifies device
Structure is advantageously implemented miniaturization detector, improves the convenience of test, and utilize the semiconductor processing technology of silicon substrate maturation
It is advantageously implemented large-scale production.III-nitride material has wider band gap and stronger chemical stability, so that it has
There is stronger extreme condition (such as high temperature) tolerance, and III-nitride material has preferably biology with respect to silica-base material
Compatibility, so that group III-nitride ISFET is received significant attention.
Although GaN base ISFET pH sensor is with a wide range of applications, susceptibility is still restricted.For
Improve the susceptibility of pH sensor, people have studied different high-k oxide materials as ISFET sensitive layer (such as
Al2O3、Er2O3、HfO2、Ta2O5、HoTiO3、Pr2O3Deng), so that the susceptibility of ISFET-pH detector is close to 59mV/pH.So
And susceptibility still by can this special limit limited, make its its susceptibility maximum value in 298K can only achieve
59mV/pH.In order to break through this susceptibility limit, the research team of numerous home and abroads proposes for silicon and oxide sensor
Highly sensitive double-gated transistor sensor structure can be real by the capacitive coupling amplification between transistor top-gated and bottom gate
Existing highly sensitive double grid pH detector.This is because oxide can be deposited on silica/conductive silicon substrate, and tied
The material of brilliant good quality.However, GaN cannot realize hetero-epitaxy on silica/conductive silicon substrate at present, and deposited in material
In highdensity dislocation defects, the reality of double grid type sensor is hindered.
Summary of the invention
The present invention is to overcome above-mentioned defect in the prior art, provides a kind of preparation side of double-gate structure GaN base pH sensor
Method can be realized high mutual conductance.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of double-gate structure GaN base pH sensor
Preparation method realizes high mutual conductance using thin barrier layer construction；It acts on, obtains in conjunction with the capacitive coupling of back-gate electrode and channel
Break through the detection sensitivity of this support limit of energy；Specifically includes the following steps:
S1. dielectric layer of the GaN transition layer of growing high resistant insulation (intrinsic) as backgate in N-shaped GaN substrate；
S2. GaN channel layer is grown in the GaN transition layer of high resistant insulation (intrinsic)；
S3. the thin barrier layer of AlGaN is grown in channel layer surface；
S4. deposit ohmic contacts electrode；
S5. somatomedin layer covers electrode and top-gated pole search coverage is only exposed in access area.
In the present invention, intrinsic GaN epitaxy is formed by controlling growth parameter(s) on highly doped GaN single crystal substrate
Layer substitute medium layer, and then grow thin barrier layer AlGaN/GaN structure and improve device transconductance, using SiN cover search coverage with
Outer barrier layer and Ohm contact electrode restore access area and promote device channel electrons concentration and mobility.
Further, the GaN transition layer for the high resistant insulation that the step S1 is grown into S3 and thin potential barrier thickness are smaller
AlGaN/GaN heterojunction material.
Further, by the S5 step deposited silicon nitride to protect metal electrode simultaneously and promote access area
Channel performance.
Further, the substrate is any in the GaN self-supported substrate of ammonia heat method, HVPE or MOCVD growth
Kind.
Further, high resistant insulation transition zone is any of AlN, AlGaN, GaN or combination；With a thickness of 10nm
~10 μm.
Further, the dielectric layer is silicon nitride, with a thickness of 0-500nm.
Further, the GaN channel layer be unintentional doping GaN epitaxial layer or doping high resistant GaN epitaxial layer,
The doped chemical of the doping resistive formation is carbon or iron；GaN epitaxial layer is with a thickness of 100nm~20 μm.
Further, the thin barrier layer of the AlGaN is low aluminium component AlGaN, and AlGaN layer is with a thickness of 0-20nm, and aluminium
Concentration of component is between 0-15%.
Further, the thin abarrier layer material of the AlGaN can also be one in AlInN, InGaN, AlInGaN, AlN
Kind or any several combination.
Further, the Ohm contact electrode material is Ti/Al/Ni/Au alloy, Ti/Al/Ti/Au alloy, Ti/
Al/Mo/Au alloy or Ti/Al/Ti/TiN alloy, it is Ni/Au alloy, In/Au alloy or Pd/Au that electrode, which thickeies metal material,
Alloy.
Further, in the thin barrier layer of the AlGaN, an AlN thin layer can also be inserted between GaN layer, with a thickness of
1-10nm。
Further, in the step S1 high resistant insulation transition zone, the GaN channel in step S2, in step S3
The growing method of the thin barrier layer of AlGaN is Metalorganic Chemical Vapor Deposition, molecular beam epitaxy；Medium in the step S5
The growing method of layer is that plasma enhanced chemical vapor deposition method, atomic layer deposition method, physical vaporous deposition or magnetic control splash
Penetrate method.
Compared with prior art, beneficial effect is: a kind of preparation of double-gate structure GaN base pH sensor provided by the invention
Method grows thin potential barrier AlGaN layer, and it is electric to cover the two dimension that sensitive zones promote access area with outer portion using silicon nitride passivation
Sub- gas concentration and mobility；Using thin barrier layer construction, it can be achieved that high mutual conductance, and combine the capacitor coupling of back-gate electrode and channel
Cooperation is used, to obtain the detection sensitivity for breaking through the Nernst limit.
Detailed description of the invention
Fig. 1 to Fig. 5 is the device manufacture method process schematic representation that the embodiment of the present invention 1 provides.
Fig. 6 is the structural schematic diagram for the device that the embodiment of the present invention 2 provides.
Specific embodiment
Attached drawing only for illustration, is not considered as limiting the invention；In order to better illustrate this embodiment, attached
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art,
The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of positional relationship is described in attached drawing
Illustrate, is not considered as limiting the invention.
Embodiment 1:
As shown in Fig. 1 to 5, a kind of double-gate structure GaN base pH sensor, structure successively includes substrate 1, mistake from lower to upper
Cross layer 2, channel layer 3, barrier layer 4, Ohm contact electrode 5, dielectric layer 6；Preparation method
Specifically includes the following steps:
S1. dielectric layer 6 of the GaN transition layer 2 of growing high resistant insulation (intrinsic) as backgate in N-shaped GaN substrate 1；
S2. GaN channel layer 3 is grown in the GaN transition layer 2 of high resistant insulation (intrinsic)；
S3. the thin barrier layer 4 of AlGaN is grown on 3 surface of channel layer；
S4. deposit ohmic contacts electrode 5；
S5. somatomedin layer 6 covers electrode and top-gated pole search coverage is only exposed in access area.
In the present invention, it is formed outside intrinsic GaN on highly doped GaN single crystal substrate 1 by controlling growth parameter(s)
Prolong a layer substitute medium layer 6, and then grow thin barrier layer 4AlGaN/GaN structure and improve device transconductance, covers detecting area using SiN
Barrier layer 4 and Ohm contact electrode 5 other than domain restore access area and promote device channel electrons concentration and mobility.
Specifically, the GaN transition layer 2 for the high resistant insulation that the step S1 is grown into S3 and thin potential barrier thickness are lesser
AlGaN/GaN heterojunction material.
Wherein, by the S5 step deposited silicon nitride to protect metal electrode simultaneously and promote access area channel
Performance.
In addition, the substrate 1 is any one of ammonia heat method, HVPE or GaN self-supported substrate 1 of MOCVD growth；
The high resistant insulation transition zone 2 is any of AlN, AlGaN, GaN or combination；With a thickness of 10nm~10 μm.Jie
Matter layer 6 is silicon nitride, with a thickness of 0-500nm.The GaN channel layer 3 is the GaN epitaxial layer of unintentional doping or the height of doping
GaN epitaxial layer is hindered, the doped chemical of the doping resistive formation is carbon or iron；GaN epitaxial layer is with a thickness of 100nm~20 μm.It is described
The thin barrier layer 4 of AlGaN be low aluminium component AlGaN, AlGaN layer is with a thickness of 0-20nm, and aluminium concentration of component is between 0-15%.
Thin 4 material of barrier layer of the AlGaN can also be one of AlInN, InGaN, AlInGaN, AlN or any several group
It closes.5 material of Ohm contact electrode be Ti/Al/Ni/Au alloy, Ti/Al/Ti/Au alloy, Ti/Al/Mo/Au alloy or
Ti/Al/Ti/TiN alloy, it is Ni/Au alloy, In/Au alloy or Pd/Au alloy that electrode, which thickeies metal material,.
Wherein, in the thin barrier layer 4 of the AlGaN, it can also be inserted into an AlN thin layer, between GaN layer with a thickness of 1-
10nm。
Transition zone 2, the GaN channel in step S2, the AlGaN in step S3 in addition, the high resistant in the step S1 insulate
The growing method of thin barrier layer 4 is Metalorganic Chemical Vapor Deposition, molecular beam epitaxy；The step S5 dielectric layer 6
Growing method be plasma enhanced chemical vapor deposition method, atomic layer deposition method, physical vaporous deposition or magnetron sputtering
Method.
Embodiment 2
As shown in fig. 6, being the device architecture schematic diagram of the present embodiment, it is only that: is implementing with the difference of 1 structure of embodiment
Area of grid increases one layer of induced enhancement film 7 on the basis of in example 1, further promotes device and detects sensitivity.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (10)
1. a kind of preparation method of double-gate structure GaN base pH sensor, which is characterized in that utilize thin barrier layer (4) structure, realize
High mutual conductance；It is acted in conjunction with the capacitive coupling of back-gate electrode and channel, obtains the detection sensitivity for breaking through this support limit of energy；Specific packet
Include following steps:
S1. dielectric layer (6) of the GaN transition layer (2) that growing high resistant insulate on N-shaped GaN substrate (1) as backgate；
S2. GaN channel layer (3) are grown in the GaN transition layer (2) of high resistant insulation；
S3. the thin barrier layer of AlGaN (4) are grown on channel layer (3) surface；
S4. deposit ohmic contact electrode (5)；
S5. somatomedin layer (6) covers electrode and top-gated pole search coverage is only exposed in access area.
2. the preparation method of double-gate structure GaN base pH sensor according to claim 1, which is characterized in that the step
The GaN transition layer (2) and the lesser AlGaN/GaN heterojunction material of thin potential barrier thickness for the high resistant insulation that rapid S1 is grown into S3.
3. the preparation method of double-gate structure GaN base pH sensor according to claim 1, which is characterized in that by institute
In the S5 step stated deposited silicon nitride with and meanwhile protect metal electrode and promote access area channel performance.
4. the preparation method of double-gate structure GaN base pH sensor according to claim 1, which is characterized in that the lining
Bottom (1) is any one of ammonia heat method, HVPE or GaN self-supported substrate (1) of MOCVD growth；The high resistant is insulated
Crossing layer (2) is any of AlN, AlGaN, GaN or combination；With a thickness of 10nm~10 μm；The dielectric layer (6) is nitridation
Silicon, with a thickness of 0-500nm.
5. the preparation method of double-gate structure GaN base pH sensor according to claim 1, which is characterized in that the GaN
Channel layer (3) is the GaN epitaxial layer of unintentional doping or the high resistant GaN epitaxial layer of doping, the doping member of the doping resistive formation
Element is carbon or iron；GaN epitaxial layer is with a thickness of 100nm~20 μm.
6. the preparation method of double-gate structure GaN base pH sensor according to claim 1, which is characterized in that described
The thin barrier layer of AlGaN (4) is low aluminium component AlGaN, and AlGaN layer is with a thickness of 0-20nm, and aluminium concentration of component is between 0-15%.
7. the preparation method of double-gate structure GaN base pH sensor according to claim 6, which is characterized in that described
The thin barrier layer of AlGaN (4) material can also be one of AlInN, InGaN, AlInGaN, AlN or any several combination.
8. the preparation method of double-gate structure GaN base pH sensor according to any one of claims 1 to 6, which is characterized in that
Ohm contact electrode (5) material be Ti/Al/Ni/Au alloy, Ti/Al/Ti/Au alloy, Ti/Al/Mo/Au alloy or
Ti/Al/Ti/TiN alloy, it is Ni/Au alloy, In/Au alloy or Pd/Au alloy that electrode, which thickeies metal material,.
9. the preparation method of double-gate structure GaN base pH sensor according to claim 8, which is characterized in that described
In the thin barrier layer of AlGaN (4), it can also be inserted into an AlN thin layer, between GaN layer with a thickness of 1-10nm.
10. the preparation method of double-gate structure GaN base pH sensor according to claim 8, which is characterized in that the step
The growth side of high resistant insulation transition zone (2), the GaN channel in step S2, the thin barrier layer of AlGaN (4) in step S3 in S1
Method is Metalorganic Chemical Vapor Deposition, molecular beam epitaxy；The growing method of the step S5 dielectric layer (6) be it is equal from
Daughter enhances chemical vapour deposition technique, atomic layer deposition method, physical vaporous deposition or magnetron sputtering method.
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